CN209709011U - LED luminescence chip - Google Patents

LED luminescence chip Download PDF

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Publication number
CN209709011U
CN209709011U CN201821866919.9U CN201821866919U CN209709011U CN 209709011 U CN209709011 U CN 209709011U CN 201821866919 U CN201821866919 U CN 201821866919U CN 209709011 U CN209709011 U CN 209709011U
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China
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type
luminescence chip
led luminescence
type electrode
layer
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CN201821866919.9U
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邬新根
吕奇孟
李俊贤
刘英策
其他发明人请求不公开姓名
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Xiamen Qianzhao Photoelectric Co Ltd
Xiamen Changelight Co Ltd
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Xiamen Qianzhao Photoelectric Co Ltd
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Abstract

The utility model discloses a LED luminescence chips, it includes the substrate stacked gradually, one n type semiconductor layer, one active area, one p type semiconductor layer, one transparency conducting layer, one insulating layer and a N-type electrode and a P-type electrode, wherein at least column N-type electrode connection needle of the N-type electrode is electrically connected to the n type semiconductor layer after the N-type connection needle passageway for passing through the insulating layer, the at least column P-type electrode connection needle of the P-type electrode is electrically connected to the transparency conducting layer after the p-type connection needle passageway for passing through the insulating layer, in the column N-type electrode connection needle, at least one described N-type electrode connection needle is different from two adjacent N-type electrode connection spacing of needle, in the column P-type electrode connection needle, at least one P-type electrode connection needle and two adjacent institutes The spacing for stating P-type electrode connection needle is different, and in this way, the electric current of the LED luminescence chip can be evenly distributed over.

Description

LED luminescence chip
Technical field
The utility model relates to semiconductor chips, in particular to a LED luminescence chip.
Background technique
In recent years, LED luminescence chip, such as gallium nitride LED luminescence chip and its relevant technologies are advanced by leaps and bounds The development of formula, this makes LED luminescence chip obtain big large-scale application in various fields (such as the fields such as illumination, display) With it is universal.According to the rule of luminous efficiency of the gallium nitride LED luminescence chip under different current densities it is found that using specified Under conditions of electric current, current density, which maintains light efficiency highest point, may be implemented better optical power output, with reference to attached drawing 1, wherein The light efficiency of LED luminescence chip is as there are highest points for the variation tendency of current density, if can make the electricity on the surface of LED luminescence chip Current density is maintained at reasonable level, then the light efficiency of LED luminescence chip can reach maximum value.
There are two types of structure, lithography step of the chip commonly used in the trade during being manufactured for conventional forward LED luminescence chip Number is named it, that is, three structures and five structures, wherein the manufacturing process of the LED luminescence chip of three structures is The manufacturing process of Mesa, ITO, PV&Pad, the LED luminescence chip of five structures are Mesa, CB, ITO, Pad, PV, wherein five The manufacturing process of the LED luminescence chip of structure can simplify as four procedures, including Mesa, CB, ITO, PV&Pad.From technique stream Cheng Shanglai sees, the LED luminescence chips of five structures than three structures LED luminescence chip more than CB process, wherein in five knots In the LED luminescence chip structure of structure, current barrier layer of the CB as P electrode, its purpose is to prevent LED luminescence chip The current convergence injected from P electrode causes the effect of current crowding in the underface of P electrode, accordingly, with respect to three structures LED luminescence chip for, the LED luminescence chip of five structures is often applied to high-power chip, illumination chip etc..
From the point of view of the PN diode positive and negative resistance composition of the LED luminescence chip of five structures, from the electric current of P electrode injection Followed by active area is entered after metal electrode extension layer, transparency conducting layer and p-type gallium nitride layer, from N electrode injected electrons Followed by after metal electrode extension layer and n type gallium nitride layer enter active area, and from P electrode injected holes and from N electricity Pole injected electrons is compound and luminous in active area.It is well known that the conductivity relative to semiconductor, the electricity of metal electrode Conductance is higher, and therefore, the electric current injected from P electrode has the trend of P interdigital electrode end of being gathered in, and from attached shown in fig. 1 From the point of view of the curve of the characteristics of luminescence of LED luminescence chip, with the rising of current density, after LED luminescence chip rises there are brightness Downward trend, that is, there are saturation current densities for LED luminescence chip.The structure of ideal high brightness luminescence chip enables to The current density of each region of LED luminescence chip is kept at the range for making LED luminescence chip reach optimal luminescent efficiency, but It is that the LED luminescence chips of five current structures cannot achieve.
Fig. 2 shows the manufacturing processes and specific structure of the LED luminescence chip of five current structures, wherein the LED Luminescence chip includes an extension unit 10P, a current barrier layer 20P, a transparency conducting layer 30P, a N-type electrode 40P, a p-type Electrode 50P and a passivation protection layer 60P, the current barrier layer 20P are laminated in the extension unit 10P, described transparent to lead Electric layer 30P is laminated in the extension unit 10P and the current barrier layer 20P, and the N-type electrode 40P is electrically connected to described The n type semiconductor layer of extension unit 10P, the P-type electrode 50P are electrically connected to the p type semiconductor layer of the extension unit 10P With the transparency conducting layer 30P, and the P-type electrode 50P correspond to the current barrier layer 20P, the passivation protection layer 60P is laminated in the transparency conducting layer 30P and is laminated in a part of the N-type electrode 40P and the P-type electrode 50P.Work as electricity When stream is injected the LED luminescence chip from the N-type electrode 40P and P-type electrode 50P, infused from the N-type electrode 40P The electric current entered can enter active area through the n type semiconductor layer of the extension unit 10P, inject from the P-type electrode 50P Electric current can be after by transparency conducting layer 30P diffusion and after by current barrier layer 20P blocking from the extension unit The P type semiconductor layer of 10P enters active area, to enter the electric current of active area from n type semiconductor layer and from p type semiconductor layer Electric current into active area is compound and generates light.Attached drawing 3 shows the current distribution of the current LED luminescence chip, can See, it is attached Fig. 2 shows the current LED luminescence chip current distribution and uneven, the not same district of the LED luminescence chip The current density in domain is not identical or inconsistent, this causes the current LED luminescence chip close by control electric current Degree is to reach optimal luminescent efficiency.
Utility model content
One of the utility model is designed to provide a LED luminescence chip, wherein the electric current of the LED luminescence chip is close Degree can be maintained at zone of reasonableness, to improve the luminous efficiency of the LED luminescence chip.
One of the utility model is designed to provide a LED luminescence chip, wherein the electric current energy of the LED luminescence chip Enough it is evenly distributed over, so that the current density of the different zones of the LED luminescence chip is consistent, side in this way The luminous efficiency of formula, the LED luminescence chip can be enhanced by way of controlling current density.
One of the utility model is designed to provide a LED luminescence chip, wherein the N-type electricity of the LED luminescence chip Spacing between the adjacent N-type electrode connection needle of pole and the spacing between the adjacent P-type electrode connection needle of P-type electrode are according to electric current The case where distribution, is adjusted so that the current density of the different zones of the LED luminescence chip is consistent.
One of the utility model is designed to provide a LED luminescence chip, wherein the N of the LED luminescence chip The spacing P-type electrode adjacent with the P-type electrode between the adjacent N-type electrode connection needle of type electrode connect needle it Between spacing be used the mode of gradual change type and be arranged, in this way, be conducive to make to be injected the LED luminescence chip Electric current is evenly distributed over, so that the current density of the different zones of the LED luminescence chip be made to be consistent.
One of the utility model is designed to provide a LED luminescence chip, wherein the two neighboring institute of the N-type electrode The spacing between N-type electrode connection needle is stated from the N-type electrode pad of the N-type electrode to the first end of the LED luminescence chip Portion successively successively decreases in direction, and the two neighboring P-type electrode of the P-type electrode connects the spacing between needle from the P-type electrode P-type electrode pad first successively decrease to the second end direction of the LED luminescence chip and be incremented by afterwards, in this way, favorably In being evenly distributed over the electric current for being injected the LED luminescence chip, thus make the different zones of the LED luminescence chip Current density is consistent.
One of the utility model is designed to provide a LED luminescence chip, wherein the LED luminescence chip is provided outside one Prolong unit, a transparency conducting layer and an insulating layer, wherein the transparency conducting layer is laminated in the extension unit, the insulation It is laminated on the transparency conducting layer layer by layer, the N-type electrode and the P-type electrode are respectively laminated on the insulating layer, in this way Mode, the insulating layer can provide simultaneously insulation and stop electric current effect, thus the processing procedure quilt of the LED luminescence chip It reduces, be conducive to the production efficiency for improving the LED luminescence chip and reduce the manufacturing cost of the LED luminescence chip.
According to the one aspect of the utility model, the utility model provides a LED luminescence chip comprising:
One extension unit a comprising substrate, a n type semiconductor layer, an active area and the p-type stacked gradually half Conductor layer；
One transparency conducting layer is laminated in the p type semiconductor layer, wherein the transparency conducting layer is described with extending to One first passage of n type semiconductor layer and the second channel for extending to the p type semiconductor layer；
One insulating layer, is laminated in the transparency conducting layer and the first passage through the transparency conducting layer extends to The n type semiconductor layer and the second channel through the transparency conducting layer extend to the p type semiconductor layer, wherein institute Insulating layer is stated with a N-type pad channel, at least one column N-type connection needle passageway, a p-type pad channel and at least one column P-type connects needle passageway, extends respectively to the N-type wherein N-type pad channel with each N-type connects needle passageway and partly leads Body layer, p-type pad channel extend to the p type semiconductor layer, and each p-type connection needle passageway extends respectively to institute Transparency conducting layer is stated, wherein N-type connection needle passageway described at least one of described N-type connection needle passageway of a column is adjacent with two Spacing between the N-type connection needle passageway is different, p-type connection described at least one of described p-type connection needle passageway of a column Spacing between needle passageway and two adjacent p-type connection needle passageway is different；And
One electrode group comprising the N-type electrode and a P-type electrode of the insulating layer are respectively laminated on, wherein the N-type N-type pad channel of the electrode through the insulating layer connects needle passageway with each N-type and is electrically connected to the N-type respectively Semiconductor layer, wherein the P-type electrode is electrically connected to the P-type semiconductor through the p-type pad channel of the insulating layer Layer with connect needle passageway through each of the insulating layer p-type and be electrically connected to the transparency conducting layer.
One embodiment according to the present utility model, a column N-type connect the adjacent N-type in needle passageway and connect needle Spacing gradual change variation between channel.
One embodiment according to the present utility model, a column p-type connect the adjacent p-type in needle passageway and connect needle Spacing gradual change variation between channel.
One embodiment according to the present utility model, a column N-type connect the adjacent N-type in needle passageway and connect needle The second end of spacing from the LED luminescence chip between channel successively decreases to first end direction, wherein a column p-type connects Spacing between the adjacent p-type connection needle passageway in needle passageway is connect from the first end of the LED luminescence chip to second End direction first successively decreases to be incremented by afterwards.
One embodiment according to the present utility model, the extension unit have the exposed portion of semiconductor, the semiconductor Exposed portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the institute of the extension unit The first passage that semiconductor bare portion corresponds to and be connected to the transparency conducting layer is stated, wherein the insulating layer is further The semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
One embodiment according to the present utility model, the extension unit have the exposed portion in an edge, and the edge is exposed Portion extends to the substrate through the active area and the n type semiconductor layer from the p type semiconductor layer, wherein the insulating layer Further the exposed portion in the edge through the extension unit extends to the substrate.
One embodiment according to the present utility model, the insulating layer have described in a N-type pad channel, a column N-type connects needle passageway, a p-type pad channel and the two column p-types and connects needle passageway, wherein the N-type pad is logical Road is located at the second end of the LED luminescence chip, and the column N-type connection needle passageway is at the middle part of the insulating layer described in The second end of LED luminescence chip extends to the first end direction, and p-type pad channel is located at the luminous core of the LED The first end of piece, two column p-types connection needle passageway is in symmetrical mode respectively at the edge of the insulating layer from institute The first end for stating LED luminescence chip extends to the second end direction.
One embodiment according to the present utility model, the insulating layer have described in a N-type pad channel, two column N-type connects needle passageway, a p-type pad channel and a column p-type and connects needle passageway, wherein the N-type pad is logical Road is located at the second end of the LED luminescence chip, and the two column N-type connection needle passageway is in symmetrical mode respectively in institute The edge for stating insulating layer extends from the second end of the LED luminescence chip to first end direction, p-type pad channel position In the first end of the LED luminescence chip, the column p-type connection needle passageway is at the middle part of the insulating layer from the LED The first end of luminescence chip extends to the second end direction.
One embodiment according to the present utility model, the insulating layer have described in a N-type pad channel, two column N-type connects needle passageway, a p-type pad channel and the three column p-types and connects needle passageway, wherein the N-type pad is logical Road is located at the second end of the LED luminescence chip, and two column N-type pad channels are in symmetrical mode respectively described The middle part of insulating layer extends from the second end of the LED luminescence chip to first end direction, and p-type pad channel is located at The first end of the LED luminescence chip, the three column p-types connect the p-type connection needle passageway of the column in needle passageway in institute The middle part for stating insulating layer extends from the first end of the LED luminescence chip to the second end direction, in addition the two column p-types Connect needle passageway with symmetrical mode respectively the edge of the insulating layer from the first end of the LED luminescence chip to The second end direction extends, wherein between any two column p-type connection needle passageway there is a column N-type to connect needle passageway.
One embodiment according to the present utility model, the insulating layer have described in a N-type pad channel, three column N-type connects needle passageway, a p-type pad channel and the two column p-types and connects needle passageway, wherein the N-type pad is logical Road is located at the second end of the LED luminescence chip, and the column N-type connection needle in the three column N-type connection needle passageway is logical Road extends at the middle part of the insulating layer from the second end of the LED luminescence chip to first end direction, two column in addition N-type connection needle passageway is in symmetrical mode respectively at the edge of the insulating layer from the of the LED luminescence chip Two ends extend to first end direction, wherein p-type pad channel is located at the first end of the LED luminescence chip, two Arrange p-type connection needle passageway in symmetrical mode at the middle part of the insulating layer from the LED luminescence chip first End extends to the second end direction, wherein between any two column N-type connection needle passageway there is a column p-type to connect needle Channel.
One embodiment according to the present utility model, the N-type electrode include a N-type electrode pad, at least N-type electricity Pole extends item and an at least column N-type electrode connects needle, and the N-type pad of the N-type electrode pad through the insulating layer is logical Road extends to and is electrically connected to the extension unit, and the N-type electrode extension item is from the N-type electrode pad to the LED The first end direction of luminescence chip extends, and each N-type electrode connection needle is respectively from described in N-type electrode extension item warp Each of insulating layer N-type connection needle passageway extends to and is electrically connected to the extension unit, wherein the P-type electrode packet Include a P-type electrode pad, at least P-type electrode extension item and at least column P-type electrode connection needle, the P-type electrode pad P-type pad channel through the insulating layer extends to and is electrically connected to the extension unit, and the P-type electrode extends item Extend from the P-type electrode pad to the second end direction of the LED luminescence chip, each P-type electrode connection needle point Item, which is not extended, from the P-type electrode extends to and be electrically connected to institute through each of the insulating layer p-type connection needle passageway State transparency conducting layer.
According to the other side of the utility model, the utility model further provides for a LED luminescence chip comprising:
One extension unit a comprising substrate, a n type semiconductor layer, an active area and the p-type stacked gradually half Conductor layer；
One transparency conducting layer is laminated in the p type semiconductor layer；And
One electrode group, wherein the electrode group further comprises:
One N-type electrode, wherein the N-type electrode includes a N-type electrode pad, at least N-type electrode extension item and extremely A few column N-type electrode connects needle, wherein the N-type electrode pad is located at the second end of the LED luminescence chip, the N-type Electrode extension item extends from the N-type electrode pad to the first end direction of the LED luminescence chip, each N-type electricity Connection needle in pole extends to the n type semiconductor layer from N-type electrode extension item respectively, wherein the column N-type electrode connection The spacing that N-type electrode described at least one of needle connects between needle and two adjacent N-type electrode connection needles is different；With
One P-type electrode, wherein the P-type electrode includes a P-type electrode pad, at least P-type electrode extension item and extremely A few column P-type electrode connects needle, wherein the P-type electrode pad is located at the first end of the LED luminescence chip, the p-type Electrode extension item extends from the P-type electrode pad to the second end direction of the LED luminescence chip, each p-type electricity Connection needle in pole extends to the transparency conducting layer from P-type electrode extension item respectively, wherein a column P-type electrode connects needle At least one of described in spacing between P-type electrode connection needle and two adjacent P-type electrodes connection needles it is different.
One embodiment according to the present utility model, the N-type electrode pad of the N-type electrode are electrically connected to described The P-type electrode pad of n type semiconductor layer, the P-type electrode is electrically connected to the transparency conducting layer.
One embodiment according to the present utility model, the N-type electrode pad of the N-type electrode are electrically connected to described The P-type electrode pad of n type semiconductor layer, the P-type electrode is electrically connected to the p type semiconductor layer.
One embodiment according to the present utility model, the LED luminescence chip further comprise an insulating layer, have one N-type pad channel, at least column N-type connection needle passageway, a p-type pad channel and an at least column p-type connect needle passageway, Described in transparency conducting layer have a first passage, wherein the insulating layer is laminated in the transparency conducting layer and through described transparent The first passage of conductive layer extends to the n type semiconductor layer, wherein the N-type electrode pad of the N-type electrode and The N-type pad channel through the insulating layer with each N-type connects needle passageway to each N-type electrode connection needle respectively The n type semiconductor layer is extended respectively to and is electrically connected to, wherein the P-type electrode pad of the P-type electrode and each The P-type electrode connection needle connects needle passageway extension with each p-type in the p-type pad channel through the insulating layer respectively Extremely and it is electrically connected to the transparency conducting layer.
One embodiment according to the present utility model, the LED luminescence chip further comprise an insulating layer, have one N-type pad channel, at least column N-type connection needle passageway, a p-type pad channel and an at least column p-type connect needle passageway, Described in transparency conducting layer have a first passage and a second channel, wherein the insulating layer is laminated in the transparency conducting layer The N type semiconductor layer is extended to the first passage through the transparency conducting layer and through the transparency conducting layer The second channel extends to the p type semiconductor layer, wherein the N-type electrode pad and each N of the N-type electrode Type electrode connection needle connects needle passageway with each N-type and each extends in the N-type pad channel through the insulating layer respectively Extremely and it is electrically connected to the n type semiconductor layer, wherein the P-type electrode pad of the P-type electrode is through the insulating layer The P type pad channel extend to be electrically connected to the p type semiconductor layer, each P-type electrode connects needle and passes through respectively Each of the insulating layer p-type connection needle passageway extends to and is electrically connected to the transparency conducting layer.
Detailed description of the invention
Fig. 1 is the light efficiency of LED luminescence chip with the variation tendency schematic diagram of current density.
Fig. 2 is the manufacturing process and structural schematic diagram of existing LED luminescence chip.
Fig. 3 is the current distribution schematic diagram of existing LED luminescence chip.
Fig. 4 A and Fig. 4 B be respectively according to a LED luminescence chip of a preferred embodiment of the utility model manufacturing step it One schematic diagram.
Fig. 5 A and Fig. 5 B are walked according to the manufacture of the LED luminescence chip of the above-mentioned preferred embodiment of the utility model respectively Two rapid schematic diagram.
Fig. 6 A and Fig. 6 B are walked according to the manufacture of the LED luminescence chip of the above-mentioned preferred embodiment of the utility model respectively Three rapid schematic diagram.
Fig. 7 A to Fig. 7 B is walked according to the manufacture of the LED luminescence chip of the above-mentioned preferred embodiment of the utility model respectively Four rapid schematic diagram.
Fig. 8 A to Fig. 8 C is walked according to the manufacture of the LED luminescence chip of the above-mentioned preferred embodiment of the utility model respectively Five rapid schematic diagram.
Fig. 9 A to Fig. 9 C is walked according to the manufacture of the LED luminescence chip of the above-mentioned preferred embodiment of the utility model respectively Six rapid schematic diagram.
Figure 10 is the current distribution schematic diagram according to the LED luminescence chip of the above-mentioned preferred embodiment of the utility model.
Figure 11 is the schematic cross-sectional view according to a LED luminescence chip of the another preferred embodiment of the utility model.
Figure 12 is the schematic cross-sectional view according to a LED luminescence chip of the another preferred embodiment of the utility model.
Figure 13 is the schematic cross-sectional view according to a LED luminescence chip of the another preferred embodiment of the utility model.
Specific embodiment
It is described below for disclosing the utility model so that those skilled in the art can be realized the utility model.It retouches below Preferred embodiment in stating is only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It is retouched following The basic principle of the utility model defined in stating can be applied to other embodiments, deformation scheme, improvement project, etc. Tongfangs The other technologies scheme of case and the spirit and scope without departing from the utility model.
It will be understood by those skilled in the art that in the exposure of the utility model, term " longitudinal direction ", " transverse direction ", "upper", The orientation of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside" or position are closed System is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing the present invention and simplifying the description, without It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore on Stating term should not be understood as limiting the present invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment, The quantity of one element can be one, and in a further embodiment, the quantity of the element can be it is multiple, term " one " is no It can be interpreted as the limitation to quantity.
With reference to the attached drawing 4A to Fig. 9 C of the Figure of description of the utility model, according to a preferred embodiment of the utility model One LED luminescence chip is disclosed for and is set forth in following description, wherein the LED luminescence chip includes an extension unit 10, a transparency conducting layer 20, an insulating layer 30 and an electrode group 40.
Specifically, with reference to attached drawing 4A to Fig. 5 B, the extension unit 10 include a substrate 11, a n type semiconductor layer 12, One active area 13 and a p type semiconductor layer 14, wherein the n type semiconductor layer 12 is laminated in the substrate 11, described active Area 13 is laminated in the n type semiconductor layer 12, the p type semiconductor layer 14 is laminated in the active area 13, thus the extension The substrate 11 of unit 10, the N type semiconductor layer 12, the active area 13 and the p type semiconductor layer 14 successively layer It is folded.
For example, in a specific example of the LED luminescence chip of the utility model, the n type semiconductor layer 12 It is grown from the substrate 11, so that the n type semiconductor layer 12 is laminated in the substrate 11；The active area 13 is from the N-type Semiconductor layer 12 is grown, so that the active area 13 is laminated in the N type semiconductor layer 12；The p type semiconductor layer 14 is from institute The growth of active area 13 is stated, so that the p type semiconductor layer 14 is laminated in the active area 13, thus the institute of the extension unit 10 Substrate 11, the N type semiconductor layer 12, the active area 13 and the p type semiconductor layer 14 is stated to stack gradually.More specifically, It can use metallo-organic compound chemical gaseous phase deposition equipment (Metal-organic Chemical Vapor Deposition, MOCVD) from the substrate 11 grow the N type semiconductor layer 12, from the n type semiconductor layer 12 grow institute It states active area 13 and grows the p type semiconductor layer 14 from the active area 13, thus the lining of the extension unit 10 Bottom 11, the n type semiconductor layer 12, the active area 13 and the p type semiconductor layer 14 stack gradually.
It is noted that the type of the substrate 11 of the extension unit 10 is sent out in the LED of the utility model It is unrestricted in optical chip, for example, the substrate 11 can be but not limited to Sapphire Substrate, silicon substrate etc..In addition, described outer The type of the n type semiconductor layer 12 and the p type semiconductor layer 14 that prolong unit 10 is sent out in the LED of the utility model Can also be unrestricted in optical chip, for example, the N type semiconductor layer 12 can be gallium nitride layer, correspondingly, the p-type half Conductor layer 14 can be gallium nitride layer.
With reference to attached drawing 4A and Fig. 4 B, the extension unit 10 has at least exposed portion 15 of semiconductor, wherein described partly lead The exposed portion 15 of body extends to the n type semiconductor layer 12 through the active area 13 from the p type semiconductor layer 14, in this way, the N A part of surface of type semiconductor layer 12 is exposed to the semiconductor bare portion 15.Specifically, firstly, using photoresist system Make exposed portion's figure, to identify region to be etched.Preferably, for making the thickness range of the photoresist of exposed portion's figure For 2 μm -4 μm (including 2 μm and 4 μm).Secondly, using inductively coupled plasma (Inductively Coupled Plasma, ICP) successively the p type semiconductor layer 14 to the extension unit 10 and the active area 13 carry out dry method erosion It carves, to form the semiconductor for extending to the n type semiconductor layer 12 through the active area 13 from the p type semiconductor layer 14 Exposed portion 15, so that a part of surface of the exposure n type semiconductor layer 12 is in the semiconductor bare portion 15.Then, it removes Photoresist layer, to form the extension unit 10.It is noted that removing the mode of the photoresist in the utility model It is unrestricted in the LED luminescence chip, such as the photoresist can be removed through but not limited to the mode for going glue to remove photoresist.
That is, the extension unit 10 includes the substrate 11, the N type that is laminated in the substrate 11 is partly led Body layer 12, the active area 13 for being laminated in the n type semiconductor layer 12 and the p-type for being laminated in the active area 13 are partly led Body layer 14 and the n type semiconductor layer 12 is extended to described in exposure through the active area 13 from the p type semiconductor layer 14 The semiconductor bare portion 15 on a part of surface of n type semiconductor layer 12.
In a specific example of the LED luminescence chip of the utility model, inductive couple plasma etc. is used Mode further etches the n type semiconductor layer 12, is extended from the p type semiconductor layer 14 through the active area 13 with being formed The extremely semiconductor bare portion 15 of the n type semiconductor layer 12, and make a part of surface of the n type semiconductor layer 12 It is exposed on the semiconductor bare portion 15.That is, this in the LED luminescence chip of the utility model preferably shows In example, the thickness at the position corresponding to the semiconductor bare portion 15 of the n type semiconductor layer 12 is less than the N-type The thickness at the position corresponding to the active area 13 of semiconductor layer 12.
Preferably, the depth dimensions range in the semiconductor bare portion 15 of the extension unit 10 is 0.9 μm -2 μm (including 0.9 μm and 2 μm).Using inductively coupled plasma to the p type semiconductor layer 14, the active area 13 and described It is Cl2 (chlorine), BCl3 (boron chloride) and Ar (argon gas) that n type semiconductor layer 12, which carries out the gas used when dry etching,.
Further, with reference to attached drawing 4A to Fig. 9 C, the LED luminescence chip has a first end 101 and corresponds to institute State a second end 102 of first end 101.The semiconductor bare portion 15 of the extension unit 10 has a pad exposed Portion 151 and at least one extension exposed portion 152 of item for being connected to the exposed portion 151 of the pad, wherein exposed 151 He of portion of the pad The exposed portion 152 of extension item extends to the n type semiconductor layer through the active area 13 from the p type semiconductor layer 14 respectively 12, with a part of surface of the exposure n type semiconductor layer 12 in the exposed portion 151 of the pad and the exposed portion of the extension item 152.The exposed portion 151 of pad is formed in the second end 102 of the LED luminescence chip, the exposed portion of the extension item 152 extend from the second end 102 of the LED luminescence chip to 101 direction of first end.
Specifically, in this specific example of the LED luminescence chip shown in attached drawing 4A to Fig. 9 C, it is described partly to lead The quantity in the exposed portion 152 of the extension item in the exposed portion 15 of body is one, wherein the pad in the semiconductor bare portion 15 Exposed portion 151 is by etching the p-type of the extension unit 10 in the second end 102 of the LED luminescence chip partly Conductor layer 14 and the mode of the active area 13 are formed, wherein the exposed portion 152 of the extension item in the semiconductor bare portion 15 By the p type semiconductor layer 14 and the active area that etch the extension unit 10 at the middle part of the LED luminescence chip 13 mode is formed, and the extension exposed portion 152 of item at the middle part of the extension unit 10 from the LED luminescence chip The second end 102 extends to 101 direction of first end；Or the pad in the semiconductor bare portion 15 is exposed Portion 151 is by etching the P-type semiconductor of the extension unit 10 in the second end 102 of the LED luminescence chip The mode of layer 14, the active area 13 and the n type semiconductor layer 12 is formed, wherein the expansion in the semiconductor bare portion 15 The exhibition exposed portion 152 of item is by etching the p type semiconductor layer of the extension unit 10 at the middle part of the LED luminescence chip 14, the mode of the active area 13 and the n type semiconductor layer 12 is formed, and the exposed portion 152 of extension item is described outer The middle part for prolonging unit 10 extends from the second end 102 of the LED luminescence chip to 101 direction of first end.
It is understood that exposed 151 He of portion of the pad in the semiconductor bare portion 15 of the extension unit 10 The exposed portion 152 of extension item by with along with etch process formed, and the pad in the semiconductor bare portion 15 is naked Dew portion 151 and the extension exposed portion 152 of item are from the p type semiconductor layer 14 of the extension unit 10 through described active Area 13 extends to the n type semiconductor layer 12, so that a part of surface of the n type semiconductor layer 12 is exposed on the pad Exposed portion 151 and the exposed portion 152 of extension item.
With reference to attached drawing 7A and Fig. 7 B, the transparency conducting layer 20 has a first passage 21, wherein the transparency conducting layer 20 are laminated in the p type semiconductor layer 14 of the extension unit 10, and the semiconductor bare of the extension unit 10 Portion 15 corresponds to and is connected to the first passage 21 of the transparency conducting layer 20.Specifically, the transparency conducting layer 20 It is grown from the p type semiconductor layer 14 of the extension unit 10, so that the transparency conducting layer 20 is laminated in the extension list The p type semiconductor layer 14 of member 10.
Preferably, the shape of the first passage 21 of the transparency conducting layer 20 and the extension unit 10 is described The shape in semiconductor bare portion 15 is consistent.It is highly preferred that the size of the first passage 21 of the transparency conducting layer 20 is slightly larger Size in the semiconductor bare portion 15 of the extension unit 10, so that the P-type semiconductor of the extension unit 10 A part of surface of layer 14 is exposed to the first passage 21 of the transparency conducting layer 20.
Specifically, firstly, depositing an electrically conducting transparent base in the extension unit 10, so that the electrically conducting transparent base It is laminated in the p type semiconductor layer 14 and the n type semiconductor layer 12 of the extension unit 10.It is noted that being formed The material of the electrically conducting transparent base can be but not limited to tin indium oxide, thus, the electrically conducting transparent base can be but not It is limited to indium tin oxide layer.Preferably, the thickness range of the electrically conducting transparent base is 100 angstroms -2000 angstroms (including 100 angstroms With 2000 angstroms).For example, in a specific example of the LED luminescence chip of the utility model, can by but it is unlimited The electrically conducting transparent base is deposited in the extension unit 10, so that the electrically conducting transparent base in the mode of sputtering or vapor deposition It is laminated in the p type semiconductor layer 14 and the n type semiconductor layer 12 of the extension unit 10.
Secondly, being laminated in the electrically conducting transparent base in the extension unit 10 depositing the electrically conducting transparent base After the p type semiconductor layer 14 and the n type semiconductor layer 12 of the extension unit 10, to the electrically conducting transparent base into The operation of row alloy.For example, when carrying out alloy operation to the electrically conducting transparent base board that uses be quick anneal oven (RTA) or Person's alloy furnace tubes by adopting, alloy temperature range are 500 DEG C -600 DEG C (including 500 DEG C and 600 DEG C).It needs to lead to during alloy Enter oxygen and nitrogen, wherein the property of the adjustable electrically conducting transparent base of mode by adjusting the content of oxygen.
Then, etching pattern, and the root by way of wet etching are identified in the electrically conducting transparent base using photoresist The electrically conducting transparent base is etched according to etched pattern, so that the electrically conducting transparent base, which is formed, is laminated in the extension unit 10 The transparency conducting layer 20 of the p type semiconductor layer 14 and the first passage 21 for forming the transparency conducting layer 20.Most Afterwards, photoresist is removed.Preferably, the solution used when etching the electrically conducting transparent base according to etched pattern can be but unlimited In the mixed solution of ferric trichloride and hydrochloric acid.
With continued reference to attached drawing 7A and Fig. 7 B, the transparency conducting layer 20 further has a second channel 22, wherein described Second channel 22 is formed in the first end 101 of the LED luminescence chip, and the p-type of the extension unit 10 A part of surface of semiconductor layer 14 is exposed on the second channel 22 of the transparency conducting layer 20.That is, described The second channel 22 of transparency conducting layer 20 extends to the p type semiconductor layer 14 of the extension unit 10, so that described It is described second logical to be exposed on the transparency conducting layer 20 for a part of surface of the p type semiconductor layer 14 of extension unit 10 Road 22.
Preferably, the first passage 21 of the transparency conducting layer 20 is etched with the second channel 22 by with along with Technique is formed.Optionally, the first passage 21 of the transparency conducting layer 20 and the second channel 22 are according to sequencing It is formed, for example, the second channel 22 is formed after the first passage 21 for forming the transparency conducting layer 20, or The first passage 21 is formed after the second channel 22 for forming the transparency conducting layer 20.
With reference to attached drawing 8A to Fig. 8 C, the insulating layer 30 has a N-type pad channel 31, at least one column N type connection needle logical Road 32, a p-type pad channel 33 and at least one column p-type connect needle passageway 34.The insulating layer 30 is laminated in described transparent lead Electric layer 20, and the insulating layer 30 extends to the extension unit 10 through the first passage 21 of the transparency conducting layer 20 The n type semiconductor layer 21 and the second channel 22 through the transparency conducting layer 20 extend to the extension unit 10 The p type semiconductor layer 14, wherein the N-type pad channel 31 of the insulating layer 30 connects needle passageway with each N-type 32 extend respectively to the n type semiconductor layer 12 of the extension unit 10, with one of the exposure n type semiconductor layer 12 Surface is divided to connect needle passageway 32 with each N-type in N-type pad channel 31, wherein the p-type of the insulating layer 30 Pad channel 33 extends to the p type semiconductor layer 14 of the extension unit 10, with the one of the exposure p type semiconductor layer 14 Part of the surface is in p-type pad channel 33, wherein each of described insulating layer 30 p-type connection needle passageway 34 extends to institute Transparency conducting layer 20 is stated, needle passageway 34 is connected in each p-type with a part of surface of the exposure transparency conducting layer 20.
Preferably, the extension unit 10 further has the exposed portion 16 in an edge, wherein the exposed portion 16 in the edge exists The edge of the extension unit 10 extends from the p type semiconductor layer 14 through the active area 13 and the n type semiconductor layer 12 To the substrate 11, with a part of surface of the exposure substrate 11 in the exposed portion 16 in the edge.The insulating layer 30 is through institute The exposed portion 16 in the edge for stating extension unit 10 extends to the substrate 11 of the extension unit 10.
In this specific example of the LED luminescence chip shown in attached drawing 8A to Fig. 8 C, the insulating layer 30 has There is a N-type pad channel 31, one to arrange described N-type connection 32, p-type pad channels 33 of needle passageway and two column The p-type connects needle passageway 34, wherein the N-type pad channel 31 of the insulating layer 30 is formed in the LED luminescence chip The second end 102, and the N type pad channel 31 extends to the n type semiconductor layer of the extension unit 10 12, with a part of surface of the exposure N type semiconductor layer 12 in N-type pad channel 31, wherein the insulating layer 30 Each N-type connection needle passageway 32 is in a manner of being spaced apart from each other at the middle part of the insulating layer 30 from the LED luminescence chip The second end 102 extend to 101 direction of first end, and each N type connection needle passageway 32 prolongs respectively The n type semiconductor layer 12 of the extension unit 10 is extended to, with a part of surface of the exposure n type semiconductor layer 12 in every A N-type connects needle passageway 32, wherein the P type pad channel 33 is formed in the first end of the LED luminescence chip Portion 101, and p-type pad channel 33 extends to the p type semiconductor layer 14 of the extension unit 10, described in exposure A part of surface of p type semiconductor layer 14 is in p-type pad channel 33, wherein in the connection of p-type described in each column needle passageway 34 Each p-type connection needle passageway 34 is in a manner of being spaced apart from each other at the edge of the insulating layer 30 from the LED luminescence chip The first end 101 extend to 102 direction of the second end, and each p-type connection needle passageway 34 prolongs respectively The transparency conducting layer 20 is extended to, it is logical in each p-type connection needle with a part of surface of the exposure transparency conducting layer 20 Road 34.Preferably, the two column p-type connection needle passageway 34 is symmetrical relative to the column N-type connection needle passageway 32.
In the LED luminescence chip of the utility model, at least one of described N-type connection needle passageway 32 of column institute The spacing stated between N-type connection needle passageway 32 and two adjacent N-type connection needle passageway 32 is different, correspondingly, a column P P-type connection needle passageway 34 p-type adjacent with two described in type connection at least one of needle passageway 34 connect needle passageway 34 it Between spacing it is different, in this way, after electric current is injected the LED luminescence chip, electric current can equably be divided Cloth the extension unit 10 the n type semiconductor layer 12 and the p type semiconductor layer 14 so that the LED luminescence chip Different zones uniform current density, to be conducive to promote the LED luminescence chip by way of controlling current density Luminous efficiency.
Specifically, and allowing the insulated substrate through institute firstly, deposit an insulated substrate in the transparency conducting layer 20 The first passage 21 for stating transparency conducting layer 20 extends to the N type semiconductor layer 12 of the extension unit 10, through described The second channel 22 of transparency conducting layer 20 extends to the p type semiconductor layer 14 of the extension unit 10 and through institute The exposed portion 16 in the edge for stating extension unit 10 extends to the substrate 11 of the extension unit 10.
It is noted that the material of the insulated substrate can be but not limited to SiO2 (silica).Preferably, sharp With the vapour deposition process of plasma enhanced chemical (Plasma Enhanced Chemical Vapor Deposition, PECVD) precipitate one layer of SiO2 in the transparency conducting layer 20, wherein the thickness range of the insulated substrate be 600 angstroms- 3000 angstroms (including 600 angstroms and 3000 angstroms).
Secondly, identifying etching pattern on the surface of the insulated substrate using photoresist, and by way of wet etching The insulated substrate is etched according to etched pattern, so that the insulated substrate forms the insulating layer 30 and forms the insulating layer 30 N-type pad channel 31, each N-type connection needle passageway 32, p-type pad channel 33 and each p-type Connect needle passageway 34.Finally, removal photoresist.Preferably, the solution used when etching the insulated substrate according to etched pattern It can be but not limited to the mixed solution of ammonium fluoride and hydrofluoric acid.
Further, the insulating layer 30 have an at least p-type extended channel 35, wherein the p-type extended channel 35 with P-type pad channel 33 is adjacent, and the p-type extended channel 35 extends to the transparency conducting layer 20, described in exposure A part of surface of transparency conducting layer 20 is in the P type extended channel 35 of the insulating layer 30.Preferably, the p-type extension The quantity in channel 35 is multiple, such as in this preferable examples of the LED luminescence chip shown in attached drawing 4A to Fig. 9 C, The quantity of the p-type extended channel 35 is three, wherein each p-type extended channel 35 is surrounded in mutually adjacent mode P-type pad channel 33.
With reference to attached drawing 9A to Fig. 9 C, the electrode group 40 includes a N-type electrode 41 and a P-type electrode 42, wherein the N-type Electrode 41 and the P-type electrode 42 are respectively laminated on the insulating layer 30, and the N-type electrode 41 is through the insulating layer 30 N-type pad channel 31 connect needle passageway 32 with each N-type and extend to and be electrically connected to the extension unit 10 The n type semiconductor layer 12, the P-type electrode 42 extended to through the p-type pad channel 33 of the insulating layer 30 and by It is electrically connected to the p type semiconductor layer 14 of the extension unit 10 and is extended to through each p-type connection needle passageway 34 Be electrically connected to the transparency conducting layer 20 and extend to and be electrically connected to through each p-type extended channel 35 and is described Bright conductive layer 20.
Specifically, the N-type electrode 41 include a N-type electrode pad 411, an at least N-type electrode extension item 412 and An at least column N-type electrode connects needle 413, wherein the second end of the N-type electrode pad 411 in the LED luminescence chip Portion 102 is laminated in the insulating layer 30, and N-type pad channel of the N-type electrode pad 411 through the insulating layer 30 31 extend to and are electrically connected to the n type semiconductor layer 12 of the extension unit 10, wherein the N-type electrode extends item 412 are laminated in the insulating layer 30, and N-type electrode extension item 412 is from the N-type electrode pad 411 to the LED 101 direction of the first end of luminescence chip extends, wherein each N-type electrode connection needle 413 is respectively from the N-type electricity Pole extends item 412 and extends to and be electrically connected to the extension through each of the insulating layer 30 N-type connection needle passageway 32 The n type semiconductor layer 12 of unit 10.
It is understood that N-type described at least one of described N-type connection needle passageway 32 of a column of the insulating layer 30 The spacing connected between needle passageway 32 and two adjacent N-type connection needle passageway 32 is different, therefore, the N-type electrode 41 N type electrode connection needle 413 described at least one of described N-type electrode connection needle 413 of one column and two adjacent N-type electricity It is different that pole connects the spacing between needle 413.
Preferably, the N-type electrode pad 411 of the N-type electrode 41, N-type electrode extension item 412 and every A N-type electrode connection needle 413 is formed simultaneously, so that N-type electrode extension item 412 is electrically connected to the N-type Electrode pad 411 extends item 412 in the N-type electrode with making each N-type electrode connect needle 413 and be electrically connected. For example, making N-type electrode figure on the surface of the insulating layer 30 using negtive photoresist first, it will need to deposit the N-type electrode 41 Position expose, secondly use metal evaporation board evaporated metal layer, reuse metal-stripping mode remove it is extra Metal layer, to form the N-type electrode 41.
Correspondingly, the P-type electrode 42 includes a P-type electrode pad 421, at least P-type electrode extension item 422 and extremely A few column P-type electrode connects needle 423, wherein the first end of the P-type electrode pad 421 in the LED luminescence chip 101 are laminated in the insulating layer 30, and p-type pad channel 33 of the P-type electrode pad 421 through the insulating layer 30 The p type semiconductor layer 14 of the extension unit 10 is extended to and is electrically connected to, wherein the P-type electrode extends item 422 It is laminated in the insulating layer 30, and P-type electrode extension item 422 shines from the P-type electrode pad 421 to the LED 102 direction of the second end of chip extends, wherein each P-type electrode connection needle 423 is respectively from the P-type electrode Extension item 422 extends to and is electrically connected to described transparent lead through each of the insulating layer 30 p-type connection needle passageway 34 Electric layer 20.
The P-type electrode 42 further comprises an at least P-type electrode extension 424 and the extension connection of an at least P-type electrode Needle 425, wherein the P-type electrode extension 424 is laminated in the insulating layer 30, and the P-type electrode extension 424 is prolonged The P-type electrode pad 421 is stretched in, wherein P-type electrode extension connection needle 425 extends the P-type electrode extension 424, and P-type electrode extension connection needle 425 extends to and electric through the p-type extended channel 35 of the insulating layer 30 It is connected to the transparency conducting layer 20.
It is understood that p-type described at least one of described p-type connection needle passageway 34 of a column of the insulating layer 30 The spacing connected between needle passageway 34 and two adjacent p-type connection needle passageway 34 is different, therefore, the P-type electrode 42 P-type electrode connection needle 423 and two adjacent P-type electrodes described at least one of described P-type electrode connection needle 423 of one column The spacing connected between needle 423 is different.
Preferably, the P-type electrode pad 421 of the P-type electrode 42, the P-type electrode extend item 422, the P Type electrode connection needle 423, the P-type electrode extension 424 and P-type electrode extension connection needle 425 are formed simultaneously, thus So that the P-type electrode extension item 422 and the P-type electrode extension 424 are electrically connected to the P-type electrode pad respectively 421, the P-type electrode connection needle 423 is electrically connected to the P-type electrode extension item 422 and P-type electrode extension connects It connects needle 425 and is electrically connected to the P-type electrode extension 424.For example, using negtive photoresist in the surface system of the insulating layer 30 first Make P-type electrode figure, the position for needing to deposit the P-type electrode 42 is exposed, is secondly deposited using metal evaporation board Metal layer, the mode for reusing metal-stripping remove extra metal layer, to form the P-type electrode 42.
Preferably, in this preferable examples of the LED luminescence chip of the utility model, with reference to attached drawing 8A to figure 8C, in the column N-type connection needle passageway 32 of the insulating layer 30, between the adjacent N type connects between needle passageway 32 Successively successively decrease away from the second end 102 from the LED luminescence chip to 101 direction of first end, correspondingly, reference Attached drawing 9A to Fig. 9 C, in the column N-type electrode connection needle 413 of the N-type electrode 41, the adjacent N-type electrode connection Spacing between needle 413 is successively passed from the second end 102 of the LED luminescence chip to 101 direction of first end Subtract.It is adjacent described in the column p-type connection needle passageway 34 of the insulating layer 30 with further reference to attached drawing 8A to Fig. 8 C P-type connects the spacing between needle passageway 34 from the first end 101 of the LED luminescence chip to the second end 102 Direction is first successively decreased to be incremented by afterwards, correspondingly, with reference to attached drawing 9A to Fig. 9 C, in the P-type electrode connection of a column of the P-type electrode 42 In needle 423, the adjacent P-type electrode connects the first end 101 of the spacing between needle 423 from the LED luminescence chip First successively decrease to 102 direction of the second end and is incremented by afterwards.In this way, when electric current is respectively from the N-type electrode 41 and p-type electricity When the LED luminescence chip is injected in pole 42, electric current can be distributed evenly at the n type semiconductor layer 12 and the P Type semiconductor layer 14, and subsequent enters the electric current of the active area 13 from the n type semiconductor layer 12 and from the p-type half Conductor layer 14 enter the active area 13 electric current can be compound and generate light, to improve the bright of the LED luminescence chip Degree.That is, by connecting the column N-type electrode between the adjacent N-type electrode connects between needle 413 in needle 413 Away from gradual change and by making the spacing in the column P-type electrode connection needle 423 between the adjacent P-type electrode connection needle 423 gradually The mode of change enables to electric current to be distributed evenly at the n type semiconductor layer 12 and the p type semiconductor layer 14, and makes Current density is maintained at zone of reasonableness, to be conducive to improve the luminous efficiency of the LED luminescence chip.
Attached drawing 10 shows the current distribution of the LED luminescence chip of the utility model, sends out relative to existing LED The current distribution of optical chip, the current distribution of the LED luminescence chip of the utility model more evenly, in this way, Be conducive to be consistent the current density of the different parts of the LED luminescence chip, shine to be conducive to improve the LED The luminous efficiency of chip.
Attached drawing 11 shows the LED luminescence chip of the another preferred embodiment according to the utility model, extremely with attached drawing 4A Unlike the LED luminescence chip shown in Fig. 9 B, this in the LED luminescence chip shown in attached drawing 11 preferably shows In example, the transparency conducting layer 20 is without the second channel 22, thus the P-type electrode pad 421 of the P-type electrode 42 Extend to and be electrically connected to the transparency conducting layer 20.
Attached drawing 12 shows the LED luminescence chip of the another preferred embodiment according to the utility model, extremely with attached drawing 4A Unlike the LED luminescence chip shown in Fig. 9 B, this in the LED luminescence chip shown in attached drawing 12 preferably shows In example, there is one to be formed in described the of the LED luminescence chip for the semiconductor bare portion 15 of the extension unit 10 The exposed portion 151 of the pad of two ends 102 and two are respectively from the exposed portion 151 of the pad to the LED luminescence chip The exposed portion 152 of the extension item that 101 direction of first end extends, the exposed portion 152 of extension item described in two of them is distinguished It is formed in the two sides of the extension unit 10 and two exposed portions 152 of extension item symmetrically.
The transparency conducting layer 20 is laminated in the p type semiconductor layer 14 of the extension unit 10, and makes the extension The semiconductor bare portion 15 of unit 10 corresponds to and is connected to the first passage 21 of the transparency conducting layer 20.
The insulating layer 30 is laminated in the transparency conducting layer 20, and the insulating layer 30 is through the transparency conducting layer 20 The first passage 21 extend to the n type semiconductor layer 12 of the extension unit 10, through the transparency conducting layer 20 The second channel 22 extends to the p type semiconductor layer 14 of the extension unit 10 and the institute through the extension unit 10 State the substrate 11 that the exposed portion 16 in edge extends to the extension unit 10.The insulating layer 30 has the N-type weldering Disk channel 31, two arranges described 32, p-type pad channels 33 of connection needle passageway and a column p-type connects needle passageway 34.The N-type pad channel 31 of the insulating layer 30 extends to institute in the second end 102 of the LED luminescence chip The n type semiconductor layer 12 of extension unit 10 is stated, with a part of surface of the exposure n type semiconductor layer 12 in the N-type Pad channel 31.The two column N-types connection needle passageway 32 of the insulating layer 30 is respectively at the edge of the insulating layer 30 from institute The second end 102 for stating LED luminescence chip extends to 101 direction of first end, and each N-type connects needle Channel 32 extends respectively to the n type semiconductor layer 12 of the extension unit 10, with the one of the exposure n type semiconductor layer 12 Part of the surface connects needle passageway 32 in each N-type.It is sent out in the LED in the p-type pad channel 33 of the insulating layer 30 The first end 101 of optical chip extends to the p type semiconductor layer 14 of the extension unit 10, with the exposure p-type A part of surface of semiconductor layer 14 is in p-type pad channel 33.The one column p-type of the insulating layer 30 connects needle passageway 34 at the middle part of the insulating layer 30 from the first end 101 of the LED luminescence chip to 102 direction of the second end Extend, and each p-type connection needle passageway 34 extends respectively to the transparency conducting layer 20, with the exposure electrically conducting transparent A part of surface of layer 20 connects needle passageway 34 in each p-type.
The N-type electrode includes that a N-type electrode pad 411, two N-type electrode extends item 412 and two The N-type electrode connection needle 413 is arranged, wherein the second end of the N-type electrode pad 411 in the LED luminescence chip 102 are laminated in the insulating layer 30, and N-type pad channel of the N-type electrode pad 411 through the insulating layer 30 31 extend to and are electrically connected to the n type semiconductor layer 12 of the extension unit 10, and N-type electrode described in two of them expands Exhibition item 412 is respectively laminated on the edge of the insulating layer 30 in symmetrical mode, and each N-type electrode extends item 412 extend from the N-type electrode pad 411 to 101 direction of the first end of the LED luminescence chip respectively, wherein often A N-type electrode connection needle 413 is respectively from N-type electrode extension item 412 through each of the insulating layer 30 N-type Connection needle passageway 32 extends to and is electrically connected to the N type semiconductor layer 12 of the extension unit 10.
The P-type electrode 42 include a P-type electrode pad 421, one P-type electrode extension item 422 and The one column P-type electrode connects needle 423, wherein the first end of the P-type electrode pad 421 in the LED luminescence chip Portion 101 is laminated in the insulating layer 30, and p-type pad channel of the P-type electrode pad 421 through the insulating layer 30 33 extend to and are electrically connected to the p type semiconductor layer 14 of the extension unit 10, wherein the P-type electrode extends item 422 are laminated in the middle part of the insulating layer 30, and P-type electrode extension item 422 is from the P-type electrode pad 421 to institute 102 direction of the second end for stating LED luminescence chip extends, wherein each P-type electrode connection needle 423 is respectively from institute It states P-type electrode extension item 422 and extends to and be electrically connected to institute through each of the insulating layer 30 p-type connection needle passageway 34 State transparency conducting layer 20.
Attached drawing 13 shows the LED luminescence chip of the another preferred embodiment according to the utility model, extremely with attached drawing 4A Unlike the LED luminescence chip shown in Fig. 8 B, this in the LED luminescence chip shown in attached drawing 13 preferably shows In example, there is one to be formed in described the of the LED luminescence chip for the semiconductor bare portion 15 of the extension unit 10 The exposed portion 151 of the pad of two ends 102 and two are respectively from the exposed portion 151 of the pad to the LED luminescence chip The exposed portion 152 of the extension item that 101 direction of first end extends, the exposed portion 152 of extension item described in two of them is distinguished It is formed in the two sides of the extension unit 10 and two exposed portions 152 of extension item symmetrically.
The transparency conducting layer 20 is laminated in the p type semiconductor layer 14 of the extension unit 10, and makes the extension The semiconductor bare portion 15 of unit 10 corresponds to and is connected to the first passage 21 of the transparency conducting layer 20.
The insulating layer 30 is laminated in the transparency conducting layer 20, and the insulating layer 30 is through the transparency conducting layer 20 The first passage 21 extend to the n type semiconductor layer 12 of the extension unit 10, through the transparency conducting layer 20 The second channel 22 extends to the p type semiconductor layer 14 of the extension unit 10 and the institute through the extension unit 10 State the substrate 11 that the exposed portion 16 in edge extends to the extension unit 10.The insulating layer 30 has the N-type weldering Disk channel 31, two arranges described 32, p-type pad channels 33 of connection needle passageway and the three column p-types connect needle passageway 34.The N-type pad channel 31 of the insulating layer 30 extends to institute in the second end 102 of the LED luminescence chip The n type semiconductor layer 12 of extension unit 10 is stated, with a part of surface of the exposure n type semiconductor layer 12 in the N-type Pad channel 31.Two column of the insulating layer 30 N-type connection needle passageway 32 is respectively in symmetrical mode described in The second end 102 of LED luminescence chip extends to 101 direction of first end, and each N-type connection needle is logical Road 32 extends respectively to the n type semiconductor layer 12 of the extension unit 10, with the one of the exposure n type semiconductor layer 12 Part of the surface connects needle passageway 32 in each N-type.It is sent out in the LED in the p-type pad channel 33 of the insulating layer 30 The first end 101 of optical chip extends to the p type semiconductor layer 14 of the extension unit 10, with the exposure p-type A part of surface of semiconductor layer 14 is in p-type pad channel 33.One column of the insulating layer 30 p-type connection needle is logical Road 34 is at the middle part of the insulating layer 30 from the first end 101 of the LED luminescence chip to 102 side of the second end To extension, in addition the two column p-types connection needle passageway 34 is respectively at the edge of the insulating layer 30 from the LED luminescence chip The first end 101 extend to 102 direction of the second end, and each p-type connection needle passageway 34 prolongs respectively The transparency conducting layer 20 is extended to, it is logical in each p-type connection needle with a part of surface of the exposure transparency conducting layer 20 Road 34.It is understood that two column of the insulating layer 30 N-type connection needle passageway 32 is respectively relative to be located at the insulation Symmetrically, the insulating layer 30 arranges the P positioned at the two of edge to one column at the middle part of the layer 30 p-type connection needle passageway 34 Type connection needle passageway 34 is respectively relative to mutual positioned at a column at the middle part of the insulating layer 30 p-type connection needle passageway 34 Symmetrically.It is noted that between wantonly one or two of p-type connection needle passageway 34 there is the N-type to connect needle passageway 32。
The N-type electrode includes that a N-type electrode pad 411, two N-type electrode extends item 412 and two The N-type electrode connection needle 413 is arranged, wherein the second end of the N-type electrode pad 411 in the LED luminescence chip 102 are laminated in the insulating layer 30, and N-type pad channel of the N-type electrode pad 411 through the insulating layer 30 31 extend to and are electrically connected to the n type semiconductor layer 12 of the extension unit 10, and N-type electrode described in two of them expands Exhibition item 412 is respectively laminated on the edge of the insulating layer 30 in symmetrical mode, and each N-type electrode extends item 412 extend from the N-type electrode pad 411 to 101 direction of the first end of the LED luminescence chip respectively, wherein often A N-type electrode connection needle 413 is respectively from N-type electrode extension item 412 through each of the insulating layer 30 N-type Connection needle passageway 32 extends to and is electrically connected to the N type semiconductor layer 12 of the extension unit 10.
The P-type electrode 42 include a P-type electrode pad 421, three P-type electrode extension item 422 and The three column P-type electrodes connect needle 423, wherein the first end of the P-type electrode pad 421 in the LED luminescence chip Portion 101 is laminated in the insulating layer 30, and p-type pad channel of the P-type electrode pad 421 through the insulating layer 30 33 extend to and are electrically connected to the p type semiconductor layer 14 of the extension unit 10, wherein each P-type electrode extension Item 422 is laminated in the insulating layer 30, and P-type electrode extension item 422 is from the P-type electrode pad 421 to the LED 102 direction of the second end of luminescence chip extends, wherein each P-type electrode connection needle 423 is respectively from the p-type electricity Pole extension item 422 extends to and is electrically connected to through each of the insulating layer 30 p-type connection needle passageway 34 described transparent Conductive layer 20.
It is worth noting that, " stacking " involved in the present invention can be direct stacking, it is also possible to indirectly Stacking.For example, the n type semiconductor layer 12 of the extension unit 10, which is laminated in the substrate 11, can refer to the N-type half Conductor layer 12 is directly laminated in the substrate 11, that is, directly grows the n type semiconductor layer from the surface of the substrate 11 12, so that the n type semiconductor layer 12 is laminated in the substrate 11；12 layers of the n type semiconductor layer of the extension unit 10 Being laminated on the substrate 11 may also mean that the n type semiconductor layer 12 is laminated in the substrate 11 indirectly, that is, in the substrate Other layers, such as, but not limited to buffer layer are also provided between 11 and the n type semiconductor layer 12, that is, first described Then the surface grown buffer layer of substrate 11 grows the n type semiconductor layer 12 on the surface of buffer layer again, so that the N Type semiconductor layer 12 is laminated in the substrate 11.
It is worth noting that, showing the substrate of the LED luminescence chip in the Figure of description of the utility model 11, the n type semiconductor layer 12, the active area 13, the p type semiconductor layer 14, the transparency conducting layer 20, the insulation The thickness of layer 30, the N-type electrode 41 and the P-type electrode 42 is merely illustrative, is not offered as the substrate 11, the N-type Semiconductor layer 12, the active area 13, the p type semiconductor layer 14, the transparency conducting layer 20, the insulating layer 30, the N The actual thickness of type electrode 41 and the P-type electrode 42.Also, it is the substrate 11, the n type semiconductor layer 12, described active Area 13, the p type semiconductor layer 14, the transparency conducting layer 20, the insulating layer 30, the N-type electrode 41 and the p-type Actual proportions relationship between electrode 42 is also unlike shown in the accompanying drawings.
It will be appreciated by those skilled in the art that above embodiments are only for example, wherein the feature of different embodiments It can be combined with each other, do not explicitly pointed out in the accompanying drawings with obtaining being readily conceivable that according to the content that the utility model discloses Embodiment.
It should be understood by those skilled in the art that foregoing description and the embodiments of the present invention shown in the drawings are only used as It illustrates and is not intended to limit the utility model.The purpose of this utility model completely and effectively realizes.The function of the utility model Energy and structural principle show and illustrate in embodiment, under without departing from the principle, the embodiments of the present invention Can there are any deformation or modification.

Claims (20)

1. a LED luminescence chip characterized by comprising
One extension unit a comprising substrate, a n type semiconductor layer, an active area and the P-type semiconductor stacked gradually Layer；
One transparency conducting layer is laminated in the p type semiconductor layer, wherein the transparency conducting layer, which has, extends to the N-type One first passage of semiconductor layer and the second channel for extending to the p type semiconductor layer；
One insulating layer, be laminated in the transparency conducting layer and the first passage through the transparency conducting layer extend to it is described N type semiconductor layer and the second channel through the transparency conducting layer extend to the p type semiconductor layer, wherein it is described absolutely Edge layer has a N-type pad channel, at least one column the N-type connection needle passageway, a p-type pad channel and an at least column p-type Needle passageway is connected, wherein N-type pad channel, which connects needle passageway with each N-type, extends respectively to the N-type semiconductor Layer, p-type pad channel extend to the p type semiconductor layer, and each p-type connection needle passageway extends respectively to described Bright conductive layer, wherein N-type described at least one of described N-type connection needle passageway of a column connects needle passageway and two adjacent described N-type connects the spacing difference between needle passageway, and p-type connection needle described at least one of described p-type connection needle passageway of a column is logical Spacing between road and two adjacent p-type connection needle passageway is different；And
One electrode group comprising the N-type electrode and a P-type electrode of the insulating layer are respectively laminated on, wherein the N-type electrode N-type pad channel through the insulating layer, which with each N-type connects needle passageway and is electrically connected to the N-type respectively, partly leads Body layer, wherein the P-type electrode through the p-type pad channel of the insulating layer be electrically connected to the p type semiconductor layer and The transparency conducting layer is electrically connected to through each of the insulating layer p-type connection needle passageway.
2. LED luminescence chip according to claim 1, wherein the adjacent N-type in the column N-type connection needle passageway Connect the spacing gradual change variation between needle passageway.
3. LED luminescence chip according to claim 1, wherein the adjacent p-type in the column p-type connection needle passageway Connect the spacing gradual change variation between needle passageway.
4. LED luminescence chip according to claim 2, wherein the adjacent p-type in the column p-type connection needle passageway Connect the spacing gradual change variation between needle passageway.
5. LED luminescence chip according to claim 4, wherein the adjacent N-type in the column N-type connection needle passageway The second end of spacing from the LED luminescence chip between connection needle passageway successively decreases to first end direction, wherein a column institute State first end of the spacing between the adjacent p-type connection needle passageway in p-type connection needle passageway from the LED luminescence chip First successively decrease to the second end direction and is incremented by afterwards.
6. LED luminescence chip according to claim 1, wherein the extension unit has the exposed portion of semiconductor, it is described Semiconductor bare portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the extension list The semiconductor bare portion of member corresponds to and is connected to the first passage of the transparency conducting layer, wherein the insulating layer Further the semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
7. LED luminescence chip according to claim 2, wherein the extension unit has the exposed portion of semiconductor, it is described Semiconductor bare portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the extension list The semiconductor bare portion of member corresponds to and is connected to the first passage of the transparency conducting layer, wherein the insulating layer Further the semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
8. LED luminescence chip according to claim 3, wherein the extension unit has the exposed portion of semiconductor, it is described Semiconductor bare portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the extension list The semiconductor bare portion of member corresponds to and is connected to the first passage of the transparency conducting layer, wherein the insulating layer Further the semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
9. LED luminescence chip according to claim 4, wherein the extension unit has the exposed portion of semiconductor, it is described Semiconductor bare portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the extension list The semiconductor bare portion of member corresponds to and is connected to the first passage of the transparency conducting layer, wherein the insulating layer Further the semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
10. LED luminescence chip according to claim 5, wherein the extension unit has the exposed portion of semiconductor, it is described Semiconductor bare portion extends to the n type semiconductor layer through the active area from the p type semiconductor layer, wherein the extension list The semiconductor bare portion of member corresponds to and is connected to the first passage of the transparency conducting layer, wherein the insulating layer Further the semiconductor bare portion through the extension unit extends to the n type semiconductor layer.
11. according to claim 1 to any LED luminescence chip in 10, wherein the insulating layer has a N-type Pad channel, the column N-type connection needle passageway, a p-type pad channel and the two column p-types connect needle passageway, Wherein N-type pad channel is located at the second end of the LED luminescence chip, and the column N-type connection needle passageway is described The middle part of insulating layer extends from the second end of the LED luminescence chip to first end direction, and p-type pad channel is located at The first end of the LED luminescence chip, the two column p-type connection needle passageway is in symmetrical mode respectively in the insulation The edge of layer extends from the first end of the LED luminescence chip to the second end direction.
12. according to claim 1 to any LED luminescence chip in 10, wherein the insulating layer has a N-type Pad channel, the two column N-type connection needle passageway, a p-type pad channel and a column p-type connect needle passageway, Wherein N-type pad channel is located at the second end of the LED luminescence chip, and the two column N-type connection needle passageway is with mutual Symmetrical mode is prolonged in the second end of the edge of the insulating layer from the LED luminescence chip to first end direction respectively It stretches, p-type pad channel is located at the first end of the LED luminescence chip, and the column p-type connection needle passageway is described exhausted The middle part of edge layer extends from the first end of the LED luminescence chip to the second end direction.
13. according to claim 1 to any LED luminescence chip in 10, wherein the insulating layer has a N-type Pad channel, the two column N-type connection needle passageway, a p-type pad channel and the three column p-types connect needle passageway, Wherein N-type pad channel is located at the second end of the LED luminescence chip, and two column N-type pad channels are with mutually right The mode of title extends at the middle part of the insulating layer from the second end of the LED luminescence chip to first end direction respectively, P-type pad channel is located at the first end of the LED luminescence chip, the column institute in the three column p-type connection needle passageway P-type connection needle passageway is stated to prolong in the first end of the middle part of the insulating layer from the LED luminescence chip to the second end direction It stretches, in addition the two column p-type connection needle passageway is sent out at the edge of the insulating layer from the LED respectively in symmetrical mode The first end of optical chip extends to the second end direction, wherein having a column between any two column p-type connection needle passageway The N-type connects needle passageway.
14. according to claim 1 to any LED luminescence chip in 10, wherein the insulating layer has a N-type Pad channel, the three column N-type connection needle passageway, a p-type pad channel and the two column p-types connect needle passageway, Wherein N-type pad channel is located at the second end of the LED luminescence chip, and the three column N-types connect one in needle passageway The N-type connection needle passageway is arranged at the middle part of the insulating layer from the second end of the LED luminescence chip to first end side To extension, other two column N-types connection needle passageway is in symmetrical mode respectively at the edge of the insulating layer from institute The second end for stating LED luminescence chip extends to first end direction, shines wherein p-type pad channel is located at the LED The first end of chip, two column p-types connection needle passageway with symmetrical mode at the middle part of the insulating layer described in The first end of LED luminescence chip extends to the second end direction, wherein having between any two column N-type connection needle passageway The one column p-type connects needle passageway.
15. according to claim 1 to any LED luminescence chip in 10, wherein the N-type electrode includes a N-type electrode Pad, at least N-type electrode extension item and an at least column N-type electrode connect needle, and the N-type electrode pad is through the insulating layer N-type pad channel extend to and be electrically connected to the extension unit, the N-type electrode extends item from the N-type electricity Pole pad extends to the first end direction of the LED luminescence chip, and each N-type electrode connection needle is respectively from the N-type Electrode extension item extends to and is electrically connected to the extension unit through each of the insulating layer N-type connection needle passageway, Wherein the P-type electrode includes a P-type electrode pad, at least P-type electrode extension item and the connection of an at least column P-type electrode Needle, the P-type electrode pad extend to and are electrically connected to the extension list through the p-type pad channel of the insulating layer Member, the P-type electrode extension item extend from the P-type electrode pad to the second end direction of the LED luminescence chip, each The P-type electrode connection needle extends item from the P-type electrode respectively and prolongs through each of the insulating layer p-type connection needle passageway Extend to and be electrically connected to the transparency conducting layer.
16. a LED luminescence chip characterized by comprising
One extension unit a comprising substrate, a n type semiconductor layer, an active area and the P-type semiconductor stacked gradually Layer；
One transparency conducting layer is laminated in the p type semiconductor layer；And
One electrode group, wherein the electrode group further comprises:
One N-type electrode, wherein the N-type electrode includes a N-type electrode pad, at least N-type electrode extension item and at least one Column N-type electrode connects needle, wherein the N-type electrode pad is located at the second end of the LED luminescence chip, the N-type electrode Extension item extends from the N-type electrode pad to the first end direction of the LED luminescence chip, and each N-type electrode connects It connects needle and extends to the n type semiconductor layer from N-type electrode extension item respectively, wherein in the column N-type electrode connection needle At least one described N-type electrode connection needle and two adjacent N-type electrodes connection needles between spacing it is different；With
One P-type electrode, wherein the P-type electrode includes a P-type electrode pad, at least P-type electrode extension item and at least one Column P-type electrode connects needle, wherein the P-type electrode pad is located at the first end of the LED luminescence chip, the P-type electrode Extension item extends from the P-type electrode pad to the second end direction of the LED luminescence chip, and each P-type electrode connects It connects needle and extends to the transparency conducting layer from P-type electrode extension item respectively, wherein in the column P-type electrode connection needle Spacing between at least one described P-type electrode connection needle and two adjacent P-type electrode connection needles is different.
17. LED luminescence chip according to claim 16, wherein the N-type electrode pad of the N-type electrode is electrically connected It is connected to the n type semiconductor layer, the P-type electrode pad of the P-type electrode is electrically connected to the transparency conducting layer.
18. LED luminescence chip according to claim 16, wherein the N-type electrode pad of the N-type electrode is electrically connected It is connected to the n type semiconductor layer, the P-type electrode pad of the P-type electrode is electrically connected to the p type semiconductor layer.
19. LED luminescence chip according to claim 17 further comprises an insulating layer, have a N-type pad logical Road, at least column N-type connection needle passageway, a p-type pad channel and an at least column p-type connect needle passageway, wherein described transparent Conductive layer has a first passage, wherein the insulating layer is laminated in the transparency conducting layer and the institute through the transparency conducting layer It states first passage and extends to the n type semiconductor layer, wherein the N-type electrode pad of the N-type electrode and each N-type Electrode connection needle connects needle passageway with each N-type and extends respectively in the N-type pad channel through the insulating layer respectively Be electrically connected to the n type semiconductor layer, wherein the P-type electrode pad of the P-type electrode and each P-type electrode Connection needle connects needle passageway with each p-type and extends to and be electrically connected in the p-type pad channel through the insulating layer respectively It is connected to the transparency conducting layer.
20. LED luminescence chip according to claim 18 further comprises an insulating layer, have a N-type pad logical Road, at least column N-type connection needle passageway, a p-type pad channel and an at least column p-type connect needle passageway, wherein described transparent Conductive layer has a first passage and a second channel, wherein the insulating layer is laminated in the transparency conducting layer and through described The first passage of bright conductive layer extends to the n type semiconductor layer and the second channel through the transparency conducting layer The p type semiconductor layer is extended to, wherein the N-type electrode pad of the N-type electrode connects needle with each N-type electrode The N-type pad channel through the insulating layer connects needle passageway with each N-type and extends respectively to and be electrically connected respectively In the n type semiconductor layer, wherein the p-type pad of the P-type electrode pad of the P-type electrode through the insulating layer is logical Road extend to be electrically connected to the p type semiconductor layer, each P-type electrode connects needle respectively through the every of the insulating layer A p-type connection needle passageway extends to and is electrically connected to the transparency conducting layer.
CN201821866919.9U 2018-11-13 2018-11-13 LED luminescence chip Active CN209709011U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109616562A (en) * 2018-11-13 2019-04-12 厦门乾照光电股份有限公司 LED luminescence chip
CN109616562B (en) * 2018-11-13 2024-07-09 厦门乾照光电股份有限公司 LED luminous chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109616562A (en) * 2018-11-13 2019-04-12 厦门乾照光电股份有限公司 LED luminescence chip
CN109616562B (en) * 2018-11-13 2024-07-09 厦门乾照光电股份有限公司 LED luminous chip

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