CN209676571U - The radiator structure and automobile electric booster steering system of metal-oxide-semiconductor - Google Patents
The radiator structure and automobile electric booster steering system of metal-oxide-semiconductor Download PDFInfo
- Publication number
- CN209676571U CN209676571U CN201821825822.3U CN201821825822U CN209676571U CN 209676571 U CN209676571 U CN 209676571U CN 201821825822 U CN201821825822 U CN 201821825822U CN 209676571 U CN209676571 U CN 209676571U
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- Prior art keywords
- oxide
- metal
- semiconductor
- circuit board
- heat
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Abstract
The utility model provides a kind of radiator structure of metal-oxide-semiconductor, including pedestal, the metal-oxide-semiconductor of the circuit board being mounted on the base and installation on circuit boards, the circuit board is equipped with thermal vias, heat-conducting silicone grease is filled in the thermal vias, the heat-conducting silicone grease is in contact with metal-oxide-semiconductor, and the heat-conducting silicone grease is in contact with pedestal.The radiator structure of metal-oxide-semiconductor in the utility model, its circuit board is equipped with thermal vias, and heat-conducting silicone grease is filled in thermal vias, meanwhile heat-conducting silicone grease is directly in contact with metal-oxide-semiconductor and pedestal, and the heat of metal-oxide-semiconductor is enabled directly to be conducted to pedestal by heat-conducting silicone grease, it no longer needs to be conducted through circuit board, so that the heat of metal-oxide-semiconductor can more rapidly, be more efficiently conducted to pedestal, and make the radiating efficiency of this radiator structure higher, and then guarantee metal-oxide-semiconductor the service life is longer.
Description
Technical field
The utility model relates to a kind of radiator structures, help more particularly to the radiator structure and motorcar electric of a kind of metal-oxide-semiconductor
Power steering system.
Background technique
Present automobile electric booster steering system (abbreviation EPS), MOSFET's (abbreviation metal-oxide-semiconductor) dissipates in driving circuit
Hot mode mostly uses greatly aluminum substrate to connect the form of pedestal heat dissipation.The price of aluminum substrate itself is higher, and needs to be fabricated separately,
Separately installed aluminum substrate is even more the manufacturing cost for increasing radiator structure.
Existing metal-oxide-semiconductor connects the specific heat sink conception of pedestal by aluminum substrate are as follows: metal-oxide-semiconductor is attached on aluminum substrate, metal-oxide-semiconductor work
Heat is transmitted on aluminum substrate by underlying pad when making, conducts heat with heat-conducting silicone grease between aluminum substrate and pedestal.In this way
Heat dissipation and connection type need certain material cost since metal-oxide-semiconductor need to be mounted on aluminum substrate;In process of production,
Metal-oxide-semiconductor need to be installed on aluminum substrate by paster technique and need separately installed, and production cost is increased.In addition, existing metal-oxide-semiconductor
The radiating efficiency of radiator structure is relatively low.
Utility model content
In view of the foregoing deficiencies of prior art, the technical problem to be solved by the present invention is to provide a kind of heat dissipations
The radiator structure of more efficient metal-oxide-semiconductor.
To achieve the above object, the utility model provides a kind of radiator structure of metal-oxide-semiconductor, including pedestal, is mounted on pedestal
On circuit board and installation metal-oxide-semiconductor on circuit boards, the circuit board is equipped with thermal vias, fills out in the thermal vias
Filled with heat-conducting silicone grease, the heat-conducting silicone grease is in contact with metal-oxide-semiconductor, and the heat-conducting silicone grease is in contact with pedestal.
Further, the circuit board is pcb board.
Further, there is gap, the thermal vias is communicated with gap, the gap between the circuit board and pedestal
With in thermal vias be filled with heat-conducting silicone grease.
Further, the pedestal is equipped with cooling platform, and the gap is between cooling platform and circuit board.
Further, the circuit board is mounted on the base by screw.
Further, the metal-oxide-semiconductor has pin, and the pin is connected with circuit board.
Further, the circuit board is equipped with connecting hole, and the pin is inserted in connecting hole;And the pin and circuit
Plate welding.
As described above, the utility model relates to metal-oxide-semiconductor radiator structure, have the advantages that
The radiator structure of metal-oxide-semiconductor in the utility model, circuit board is equipped with thermal vias, and is filled in thermal vias
Heat-conducting silicone grease, meanwhile, heat-conducting silicone grease is directly in contact with metal-oxide-semiconductor and pedestal, and the heat of metal-oxide-semiconductor is enabled directly to pass through thermal conductive silicon
Rouge is conducted to pedestal, no longer needs to be conducted through circuit board, so that the heat of metal-oxide-semiconductor can more rapidly, more efficiently conduct
To pedestal, and make the radiating efficiency of this radiator structure higher, and then the service life is longer for guarantee metal-oxide-semiconductor.
Another technical problem to be solved in the utility model is to provide a kind of higher motorcar electric of radiating efficiency and helps
Power steering system.
To achieve the above object, the utility model provides a kind of automobile electric booster steering system, including the metal-oxide-semiconductor
Radiator structure.
As described above, the utility model relates to automobile electric booster steering system, have the advantages that
Automobile electric booster steering system in the utility model, based on the radiator structure of above-mentioned metal-oxide-semiconductor, so that its heat dissipation effect
Rate is higher, and guarantees its metal-oxide-semiconductor the service life is longer, and then guarantees this automobile electric booster steering system operation stability more
It is high.
Detailed description of the invention
Fig. 1 is the schematic diagram of the radiator structure of metal-oxide-semiconductor in the utility model.
Component label instructions
1 pedestal
11 cooling platforms
12 fixing grooves
13 connection pillars
2 circuit boards
21 thermal vias
3 metal-oxide-semiconductors
Specific embodiment
The embodiments of the present invention is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the utility model easily.
It should be clear that structure depicted in this specification attached drawing, ratio, size etc., only to cooperate specification revealed
Content is not intended to limit the utility model enforceable qualifications so that those skilled in the art understands and reads, therefore
Do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size, this is practical not influencing
Under novel the effect of can be generated and the purpose that can reach, the revealed technology contents institute energy of the utility model should all be still fallen in
In the range of covering.Meanwhile cited such as "upper", "lower", "left", "right", " centre " and " one " term in this specification,
Narration is merely convenient to be illustrated, rather than to limit the enforceable range of the utility model, relativeness is altered or modified,
Under the content of no substantial changes in technology, when being also considered as the enforceable scope of the utility model.
As shown in Figure 1, the utility model provides a kind of radiator structure of metal-oxide-semiconductor, including pedestal 1, it is mounted on pedestal 1
The metal-oxide-semiconductor 3 of circuit board 2 and installation on the circuit board 2, circuit board 2 are equipped with thermal vias 21, are filled in thermal vias 21
Heat-conducting silicone grease, heat-conducting silicone grease are in contact with metal-oxide-semiconductor 3, and heat-conducting silicone grease is in contact with pedestal 1.Metal-oxide-semiconductor dissipates in the utility model
Heat structure, circuit board 2 are equipped with thermal vias 21, and heat-conducting silicone grease is filled in thermal vias 21, meanwhile, heat-conducting silicone grease is straight
It connects and is in contact with metal-oxide-semiconductor 3 and pedestal 1, enable the heat of metal-oxide-semiconductor 3 to be directly conducted to pedestal 1 by heat-conducting silicone grease, no longer need to
It is conducted through circuit board 2, so that the heat of metal-oxide-semiconductor 3 can more rapidly, more efficiently be conducted to pedestal 1, and this is dissipated
The radiating efficiency of heat structure is higher, and then the service life is longer for guarantee metal-oxide-semiconductor 3.
As shown in Figure 1, the utility model provides a kind of automobile electric booster steering system, the heat dissipation including above-mentioned metal-oxide-semiconductor
Structure.Automobile electric booster steering system in the utility model, based on the radiator structure of above-mentioned metal-oxide-semiconductor, so that its radiating efficiency
It is higher, and guarantee its metal-oxide-semiconductor 3 the service life is longer, and then guarantee this automobile electric booster steering system operation stability more
It is high.
Circuit board 2 is pcb board in the present embodiment, so that the manufacturing cost of the radiator structure of metal-oxide-semiconductor is lower in the present embodiment,
And make the manufacturing cost of automobile electric booster steering system in the present embodiment lower.
There is gap, thermal vias 21 is communicated with gap, gap and heat dissipation in the present embodiment between circuit board 2 and pedestal 1
It is filled with heat-conducting silicone grease in through-hole 21, to effectively increase the contact area of heat-conducting silicone grease and pedestal 1, and enhances heat-conducting silicone grease
With the heat conduction efficiency between pedestal 1 so that the radiating efficiency of this radiator structure is higher.
Meanwhile as shown in Figure 1, pedestal 1 is equipped with cooling platform 11 in the present embodiment, above-mentioned gap is located at cooling platform 11
Between circuit board 2.The present embodiment reduces the gap between circuit board 2 and pedestal 1 by the way that cooling platform 11 is arranged on pedestal 1
Size enables the heat of metal-oxide-semiconductor 3 to be conducted to pedestal 1 more quickly, and then guarantees that the radiating efficiency of this radiator structure is higher.
Circuit board 2 is mounted on pedestal 1 by screw in the present embodiment, detachable between circuit board 2 and pedestal 1 to realize
Connection, the assembling being easy to implement between circuit board 2 and pedestal 1, and convenient for when needed removing circuit board 2 from pedestal 1.
Metal-oxide-semiconductor 3 has pin in the present embodiment, and pin is connected with circuit board 2.Meanwhile in the present embodiment on circuit board 2
Equipped with connecting hole, pin is inserted in connecting hole;And pin and circuit board 2 weld.In the present embodiment on the front and back sides of metal-oxide-semiconductor 3
It is equipped with pin.
The position of thermal vias 21 in the present embodiment on circuit board 2 is corresponding with metal-oxide-semiconductor 3, i.e., where thermal vias 21
Position is the installation site of metal-oxide-semiconductor 3.Meanwhile metal-oxide-semiconductor 3 is located at the top of thermal vias 21.Above-mentioned metal-oxide-semiconductor, that is, metal-oxide
Semiconductor field effect transistor, abbreviation metal-oxide half field effect transistor.
As shown in Figure 1, pedestal 1 has fixing groove 12 in the present embodiment, foregoing circuit plate 2, i.e. pcb board are embedded in the fixing groove
In 12.And the slot bottom of fixing groove 12 is equipped with connection pillar 13.Circuit board 2 is specifically affixed with connection pillar 13 by screw.It is above-mentioned
Cooling platform 11 is particularly located in fixing groove 12.Cooling platform 11 is located at the lower section of circuit board 2, and above-mentioned metal-oxide-semiconductor 3 is located at circuit
The top of plate 2.Above-mentioned gap is particularly located between the lower surface of circuit board 2 and the upper surface of cooling platform 11.In assembling process
In, first in the upper surface coated with thermally conductive silicone grease of cooling platform 11, then by circuit board 2 in fixing groove 12 and positioned at heat dissipation
The top of platform 11, and circuit board 2 is made to be in contact with the heat-conducting silicone grease being coated on cooling platform 11, recycle screw by circuit
Plate 2 and connection pillar 13 are affixed.Meanwhile heat-conducting silicone grease is also filled in the thermal vias 21 of circuit board 2.It is connected in the present embodiment
Pillar 13 has multiple.
The radiator structure of above-mentioned metal-oxide-semiconductor in the present embodiment, be applied particularly to the direct current of automobile electric booster steering system without
In brush motor driving circuit.Metal-oxide-semiconductor 3 and pcb board use integrated design in the present embodiment, cancel aluminum substrate, greatly reduce
The manufacturing cost of the radiator structure of metal-oxide-semiconductor in the present embodiment.Metal-oxide-semiconductor 3 is attached on pcb board in the present embodiment, and on pcb board with
3 corresponding position of metal-oxide-semiconductor is provided with above-mentioned thermal vias 21, is filled with heat-conducting silicone grease in thermal vias 21, such metal-oxide-semiconductor 3 passes through
Heat-conducting silicone grease is in contact and radiates with pedestal 1, is able to satisfy the cooling requirements of EPS, i.e. automobile electric booster steering system.This reality
The radiator structure of metal-oxide-semiconductor in example is applied under the premise of meeting cooling requirements, cancels aluminum substrate, material cost is saved and is produced into
This.
In conclusion the utility model effectively overcomes various shortcoming in the prior art and has high industrial exploitation value
Value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (8)
1. a kind of radiator structure of metal-oxide-semiconductor, it is characterised in that: including pedestal (1), the circuit board (2) being mounted on pedestal (1),
And it is mounted on the metal-oxide-semiconductor (3) on circuit board (2), the circuit board (2) is equipped with thermal vias (21), the thermal vias
(21) heat-conducting silicone grease is filled in, the heat-conducting silicone grease is in contact with metal-oxide-semiconductor (3), and the heat-conducting silicone grease connects with pedestal (1)
Touching.
2. the radiator structure of metal-oxide-semiconductor according to claim 1, it is characterised in that: the circuit board (2) is pcb board.
3. the radiator structure of metal-oxide-semiconductor according to claim 1, it is characterised in that: between the circuit board (2) and pedestal (1)
With gap, the thermal vias (21) communicates with gap, and heat-conducting silicone grease is filled in the gap and thermal vias (21).
4. the radiator structure of metal-oxide-semiconductor according to claim 3, it is characterised in that: the pedestal (1) is equipped with cooling platform
(11), the gap is located between cooling platform (11) and circuit board (2).
5. the radiator structure of metal-oxide-semiconductor according to claim 1, it is characterised in that: the circuit board (2) is mounted on by screw
On pedestal (1).
6. the radiator structure of metal-oxide-semiconductor according to claim 1, it is characterised in that: the metal-oxide-semiconductor (3) has pin, described to draw
Foot is connected with circuit board (2).
7. the radiator structure of metal-oxide-semiconductor according to claim 6, it is characterised in that: the circuit board (2) is equipped with connecting hole,
The pin is inserted in connecting hole;And the pin and circuit board (2) are welded.
8. a kind of automobile electric booster steering system, it is characterised in that: including the metal-oxide-semiconductor as described in any one of claim 1 to 7
Radiator structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821825822.3U CN209676571U (en) | 2018-11-05 | 2018-11-05 | The radiator structure and automobile electric booster steering system of metal-oxide-semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821825822.3U CN209676571U (en) | 2018-11-05 | 2018-11-05 | The radiator structure and automobile electric booster steering system of metal-oxide-semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209676571U true CN209676571U (en) | 2019-11-22 |
Family
ID=68559495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201821825822.3U Expired - Fee Related CN209676571U (en) | 2018-11-05 | 2018-11-05 | The radiator structure and automobile electric booster steering system of metal-oxide-semiconductor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209676571U (en) |
-
2018
- 2018-11-05 CN CN201821825822.3U patent/CN209676571U/en not_active Expired - Fee Related
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191122 Termination date: 20201105 |