CN209658223U - 一种正装集成单元发光二极管 - Google Patents
一种正装集成单元发光二极管 Download PDFInfo
- Publication number
- CN209658223U CN209658223U CN201920176159.7U CN201920176159U CN209658223U CN 209658223 U CN209658223 U CN 209658223U CN 201920176159 U CN201920176159 U CN 201920176159U CN 209658223 U CN209658223 U CN 209658223U
- Authority
- CN
- China
- Prior art keywords
- light emitting
- emitting diode
- diode
- integrated unit
- formal dress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000011982 device technology Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000017074 necrotic cell death Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920176159.7U CN209658223U (zh) | 2019-01-31 | 2019-01-31 | 一种正装集成单元发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920176159.7U CN209658223U (zh) | 2019-01-31 | 2019-01-31 | 一种正装集成单元发光二极管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209658223U true CN209658223U (zh) | 2019-11-19 |
Family
ID=68523873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201920176159.7U Active CN209658223U (zh) | 2019-01-31 | 2019-01-31 | 一种正装集成单元发光二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209658223U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109817781A (zh) * | 2019-01-31 | 2019-05-28 | 深圳第三代半导体研究院 | 一种正装集成单元发光二极管 |
WO2021121333A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
-
2019
- 2019-01-31 CN CN201920176159.7U patent/CN209658223U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109817781A (zh) * | 2019-01-31 | 2019-05-28 | 深圳第三代半导体研究院 | 一种正装集成单元发光二极管 |
WO2021121333A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109817781A (zh) | 一种正装集成单元发光二极管 | |
CN103620784B (zh) | 发光纳米线的串联电连接 | |
JP5256101B2 (ja) | 半導体発光素子 | |
US8507923B2 (en) | Light emitting diode package | |
CN112397626B (zh) | 一种发光二极管 | |
CN207705238U (zh) | 一种高压发光二极管 | |
US10418412B2 (en) | Light-emitting diode | |
CN209658223U (zh) | 一种正装集成单元发光二极管 | |
US9601667B2 (en) | Light-emitting device | |
CN110060996A (zh) | 一种垂直集成单元二极管芯片 | |
CN205488192U (zh) | 氮化镓基倒装led芯片 | |
CN207353282U (zh) | 发光二极管 | |
EP2590234A1 (en) | Solid state light emitting semiconductor device | |
KR20200018949A (ko) | 반도체 소자 | |
CN109923682A (zh) | 半导体器件和包括该半导体器件的半导体器件封装 | |
CN110199398B (zh) | 半导体器件和包括该半导体器件的半导体器件封装 | |
CN109920782A (zh) | 一种正装集成单元二极管芯片 | |
CN113851563B (zh) | 一种薄膜型半导体芯片结构及应用其的光电器件 | |
CN205900579U (zh) | 垂直型发光二极管 | |
WO2021121325A1 (zh) | 一种发光二极管 | |
CN206076279U (zh) | 发光二极管芯片 | |
JP7051131B2 (ja) | 半導体素子 | |
RU2247444C1 (ru) | Высокомощный светоизлучающий диод | |
CN112993114A (zh) | 一种发光二极管 | |
CN112993115A (zh) | 一种发光二极管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230425 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Southern University of Science and Technology Address before: Building 11, Jinxiu Dadi, No. 121 Hudi Pai, Guanhu Street, Longhua District, Shenzhen City, Guangdong Province, 518110 Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230725 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Southern University of Science and Technology |
|
TR01 | Transfer of patent right |