CN110060996A - 一种垂直集成单元二极管芯片 - Google Patents
一种垂直集成单元二极管芯片 Download PDFInfo
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- CN110060996A CN110060996A CN201910291408.1A CN201910291408A CN110060996A CN 110060996 A CN110060996 A CN 110060996A CN 201910291408 A CN201910291408 A CN 201910291408A CN 110060996 A CN110060996 A CN 110060996A
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- diode
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- 229910052709 silver Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
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- 229910017083 AlN Inorganic materials 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
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- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (26)
Priority Applications (1)
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CN201910291408.1A CN110060996B (zh) | 2019-04-11 | 2019-04-11 | 一种垂直集成单元二极管芯片 |
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CN201910291408.1A CN110060996B (zh) | 2019-04-11 | 2019-04-11 | 一种垂直集成单元二极管芯片 |
Publications (2)
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CN110060996A true CN110060996A (zh) | 2019-07-26 |
CN110060996B CN110060996B (zh) | 2022-02-01 |
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CN201910291408.1A Active CN110060996B (zh) | 2019-04-11 | 2019-04-11 | 一种垂直集成单元二极管芯片 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993111A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112993109A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112993110A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
WO2021121325A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN113036014A (zh) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | 一种垂直集成单元发光二极管 |
CN113036009A (zh) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | 一种薄膜垂直集成单元二极管芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101488547A (zh) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | 一种发光二极管芯片结构及其制造方法 |
CN102169941A (zh) * | 2010-02-27 | 2011-08-31 | 三星Led株式会社 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
CN103165781A (zh) * | 2011-12-09 | 2013-06-19 | 奇力光电科技股份有限公司 | 发光二极管元件 |
CN103489976A (zh) * | 2012-06-13 | 2014-01-01 | 山东浪潮华光光电子股份有限公司 | 一种提高GaAs衬底AlGaInP四元单面双电极发光二极管亮度的方法 |
CN108475712A (zh) * | 2015-12-01 | 2018-08-31 | 夏普株式会社 | 图像形成元件 |
-
2019
- 2019-04-11 CN CN201910291408.1A patent/CN110060996B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101488547A (zh) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | 一种发光二极管芯片结构及其制造方法 |
CN102169941A (zh) * | 2010-02-27 | 2011-08-31 | 三星Led株式会社 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
CN103165781A (zh) * | 2011-12-09 | 2013-06-19 | 奇力光电科技股份有限公司 | 发光二极管元件 |
CN103489976A (zh) * | 2012-06-13 | 2014-01-01 | 山东浪潮华光光电子股份有限公司 | 一种提高GaAs衬底AlGaInP四元单面双电极发光二极管亮度的方法 |
CN108475712A (zh) * | 2015-12-01 | 2018-08-31 | 夏普株式会社 | 图像形成元件 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993111A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112993109A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112993110A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
WO2021121325A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112993110B (zh) * | 2019-12-17 | 2022-09-02 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN113036014A (zh) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | 一种垂直集成单元发光二极管 |
CN113036009A (zh) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | 一种薄膜垂直集成单元二极管芯片 |
CN113036009B (zh) * | 2019-12-25 | 2022-07-05 | 深圳第三代半导体研究院 | 一种薄膜垂直集成单元二极管芯片 |
CN113036014B (zh) * | 2019-12-25 | 2022-07-05 | 深圳第三代半导体研究院 | 一种垂直集成单元发光二极管 |
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CN110060996B (zh) | 2022-02-01 |
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Effective date of registration: 20230418 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SOUTH University OF SCIENCE AND TECHNOLOGY OF CHINA Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230710 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SOUTH University OF SCIENCE AND TECHNOLOGY OF CHINA |
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