CN209515725U - A kind of iii-nitride light emitting devices promoting light emission luminance - Google Patents

Abstract

The utility model discloses a kind of iii-nitride light emitting devices for promoting light emission luminance, including substrate, and the buffer layer, undoped nitride layer, N-shaped nitride layer, active layer and the p-type nitride layer that are sequentially located on substrate；Wherein: the active layer is by In_xGa_1‑xThe well layer and In of N_yAl_zGa_1‑y‑zThe barrier layer of N is periodically alternately stacked and the multi-quantum pit structure that is formed.Utility model has the advantages that including the first multiple quantum well layer, the second multiple quantum well layer and third multiple quantum well layer, wherein the indium component mean value of the first well layer, the second well layer, third well layer from N-shaped nitride layer to p-type nitride layer side reduces, and its indium component mean value x1, x2, x3, meet relational expression: the 50% of x1≤x2, the 50% of x2≤x3, it avoids when growing active layer, because of the problem of lattice mismatch causes greatly very much the crystal quality of active layer to decline.

Description

A kind of iii-nitride light emitting devices promoting light emission luminance

Technical field

The utility model relates to technical field of semiconductors more particularly to a kind of two poles of nitride light-emitting for promoting light emission luminance Pipe.

Background technique

Light emitting diode (Light emitting diodes, LED) is a kind of electroluminescent device, has energy conservation, ring Guarantor, the advantages that safety, the service life is long, low in energy consumption, brightness is high, waterproof, miniature, light beam are concentrated, easy maintenance, are widely used in friendship The fields such as ventilating signal lamp, street lamp and large-area displays.The especially blue light-emitting diode of nitride material is present white light The basis of solid-state lighting development, the hot spot even more studied at present.

The epitaxial structure of current iii-nitride light emitting devices, including substrate, and be sequentially located on substrate buffer layer, Undoped nitride layer, N-shaped nitride layer, active layer and p-type nitride layer.Wherein active layer is multi-quantum pit structure, common It is to be alternately stacked by the well layer of several indium gallium nitrogen and the barrier layer of gallium nitride and formed, in LED operation, N-shaped nitridation Nitride layer and p-type nitride layer provide electrons and holes to active layer respectively, and electrons and holes are finally in the well layer of active layer Compound generation photon.However, since the well layer of active layer is usually to use the lesser indium gallium nitrogen of band gap width, and the base of active layer Layer, undoped nitride layer, N-shaped nitride layer and p-type nitride layer are then usually to use the biggish aluminum gallium nitride of band gap width, are made The well layer for obtaining active layer can generate epitaxy defect because of lattice mismatch in growth, reduce the crystal quality of active layer, in turn Influence the luminous efficiency of light emitting diode.

Utility model content

The utility model provides a kind of iii-nitride light emitting devices for promoting light emission luminance, the well layer of active layer be with The indium gallium nitrogen of different indium (In) components, it is less in the In component of the well layer close to N-shaped nitride layer, to avoid in growth active layer When, because lattice mismatch causes greatly very much the crystal quality of active layer to decline, and then influence the luminous effect of iii-nitride light emitting devices Rate.

To achieve the above object, the utility model provides the following technical solutions: a kind of nitride hair promoting light emission luminance Optical diode, including substrate, and the buffer layer, undoped nitride layer, N-shaped nitride layer, active being sequentially located on substrate Layer and p-type nitride layer；Wherein: the active layer is by In_xGa_1-xN(0.01≤x≤0.4) well layer and In_yAl_zGa_1-y-zN The barrier layer of (0≤y≤0.2,0≤z≤1,0≤y+z≤1) is periodically alternately stacked and the multi-quantum pit structure that is formed, described to have Active layer successively includes the first multiple quantum well layer, the second multiple quantum well layer and third multiple quantum well layer by the direction of growth, and described first Multiple quantum well layer is the first well layer and the first barrier layer is alternately stacked by n1 period and is formed, the second multiple quantum well layer is the second trap Layer and the second barrier layer are alternately stacked by n2 period and are formed, third multiple quantum well layer is third well layer and third barrier layer by n3 Period is alternately stacked and is formed, and described n1, n2 and n3 are positive integer and 2≤n1, n2, n3≤12, first well layer, the second trap The In component of layer and third well layer increases from N-shaped nitride layer to p-type nitride layer direction, and first barrier layer, the second base Layer is identical with the component of third barrier layer.

Wherein: first well layer, the second well layer and third well layer with a thickness of 1 ~ 5nm, first barrier layer, second are built Layer and third barrier layer are with a thickness of 5 ~ 20nm.

Wherein: the group of the buffer layer is divided into In_aAl_bGa_1-a-bN(0≤a≤0.2,0≤b≤1,0≤a+b≤1), thickness For 5 ~ 100nm.

Wherein: the group of the undoped nitride layer is divided into In_cAl_dGa_1-c-dN(0≤c≤0.2,0≤d≤1,0≤c+d ≤ 1), with a thickness of 1 ~ 5 μm.

Wherein: the group of the N-shaped nitride layer is divided into In_eAl_fGa_1-e-fN(0≤e≤0.2,0≤f≤1,0≤e+f≤ 1), with a thickness of 1 ~ 5 μm, the Si doping concentration of N-shaped is 1E18 ~ 1E20cm^-3。

Wherein: the group of the p-type nitride layer is divided into In_gAl_hGa_1-g-hN(0≤p≤0.2,0≤q≤1,0≤g+h≤ 1), with a thickness of 20 ~ 200nm, the Mg doping concentration of p-type is 5E18 ~ 5E21cm^-3。

Wherein: the substrate is sapphire (Al₂O₃) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride (AlN) substrate, gallium nitride (GaN) substrate, gallium oxide (Ga₂O₃) one of substrate or zinc oxide (ZnO) substrate.

Wherein: the indium component mean value of first well layer, the second well layer and third well layer is respectively x1, x2 and x3, described The 50% of x1≤x2, the 50% of the x2≤x3.

Wherein: the In component of every one first well layer is identical in first multiple quantum well layer, second multiple quantum well layer The In component of interior every one second well layer is identical, and the In component of each third well layer is identical in the third multiple quantum well layer.

Wherein: the In component of the first well layer is from N-shaped nitride layer to p-type nitride layer side in first multiple quantum well layer To being incremented by, the In component of the second well layer is nitrogenized from N-shaped in second multiple quantum well layer

Nitride layer is incremented by p-type nitride layer direction, and the In component of third well layer is from N-shaped nitrogen in the third multiple quantum well layer Compound layer is incremented by p-type nitride layer direction.

(3) beneficial effect

Compared with prior art, the utility model provides a kind of gallium nitride based light emitting diode, has following beneficial to effect Fruit: the utility model includes the first multiple quantum well layer, the second multiple quantum well layer and third multiple quantum well layer, wherein the first well layer, The indium component mean value of second well layer, third well layer from N-shaped nitride layer to p-type nitride layer side reduces, and its indium component Mean value x1, x2, x3, meet relational expression: 50%, the x2 of x1≤x2≤x3 50%, utilize the In of the well layer close to N-shaped nitride layer Component is less, avoids when growing active layer, because the problem of lattice mismatch causes greatly very much the crystal quality of active layer to decline, mentions Rise the brightness of light emitting diode.

Detailed description of the invention

Fig. 1 is the schematic diagram of the iii-nitride light emitting devices of the utility model.

Fig. 2 is the preparation method flow chart of the iii-nitride light emitting devices in the utility model embodiment.

Appended drawing reference:

Substrate 100, buffer layer 200, undoped nitride layer 300, N-shaped nitride layer 400, active layer 500, the first well layer 511, the second well layer 512, third well layer 513, the first barrier layer 521, the second barrier layer 522, third barrier layer 523, p-type nitride layer 600。

Specific embodiment

The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.

Embodiment 1, as shown in Figure 1, a kind of iii-nitride light emitting devices for promoting light emission luminance, including substrate 100, and Buffer layer 200, undoped nitride layer 300, N-shaped nitride layer 400, active layer 500 and the p-type being sequentially located on substrate 100 Nitride layer 600；Wherein: the active layer 500 is by In_xGa_1-xN(0.01≤x≤0.4) well layer and In_yAl_zGa_1-y-zN(0 ≤ y≤0.2,0≤z≤1,0≤y+z≤1) barrier layer be periodically alternately stacked and the multi-quantum pit structure that is formed, it is described active Layer 500 successively includes the first multiple quantum well layer, the second multiple quantum well layer and third multiple quantum well layer by the direction of growth, and described first Multiple quantum well layer is the first well layer 511 and the first barrier layer 521 is alternately stacked by n1 period and is formed, the second multiple quantum well layer is Second well layer 512 and the second barrier layer 522 are alternately stacked by n2 period and are formed, third multiple quantum well layer is third well layer 513 Be alternately stacked and formed by n3 period with third barrier layer 523, described n1, n2 and n3 be positive integer and 2≤n1, n2, n3≤12, The In component of first well layer 511, the second well layer 512 and third well layer 513 is from N-shaped nitride layer 400 to p-type nitride layer 600 directions increase, and first barrier layer 521, the second barrier layer 522 are identical with the component of third barrier layer 523.

Specifically, first well layer 511, the second well layer 512 and third well layer 513 with a thickness of 1 ~ 5nm, described first Barrier layer 521, the second barrier layer 522 and third barrier layer 523 with a thickness of 5 ~ 20nm；The group of the buffer layer 200 is divided into In_aAl_bGa_1-a-bN(0≤a≤0.2,0≤b≤1,0≤a+b≤1), with a thickness of 5 ~ 100nm；The undoped nitride layer 300 Group be divided into In_cAl_dGa_1-c-dN(0≤c≤0.2,0≤d≤1,0≤c+d≤1), with a thickness of 1 ~ 5 μm；The N-shaped nitride layer 400 group is divided into In_eAl_fGa_1-e-fN(0≤e≤0.2,0≤f≤1,0≤e+f≤1), with a thickness of 1 ~ 5 μm, the Si of N-shaped is adulterated Concentration is 1E18 ~ 1E20cm^-3 ；The group of the p-type nitride layer 600 is divided into In_gAl_hGa_1-g-hN(0≤p≤0.2,0≤q≤1, 0≤g+h≤1), with a thickness of 20 ~ 200nm, the Mg doping concentration of p-type is 5E18 ~ 5E21cm^-3 ；The substrate 100 is sapphire (Al₂O₃) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride (AlN) substrate, gallium nitride (GaN) substrate, gallium oxide (Ga₂O₃) one of substrate or zinc oxide (ZnO) substrate.

In addition, the indium component mean value of first well layer 511, the second well layer 512 and third well layer 513 is respectively x1, x2 And x3, the 50% of the x1≤x2, the 50% of the x2≤x3；The In of every one first well layer 511 in first multiple quantum well layer Component is identical, and the In component of every one second well layer 512 is identical in second multiple quantum well layer, in the third multiple quantum well layer The In component of each third well layer 513 is identical；The In component of the first well layer 511 is nitrogenized from N-shaped in first multiple quantum well layer Nitride layer is incremented by p-type nitride layer direction, and the In component of the second well layer 512 is from N-shaped nitride in second multiple quantum well layer Layer is incremented by p-type nitride layer direction, and the In component of third well layer 513 is from N-shaped nitride layer in the third multiple quantum well layer It is incremented by p-type nitride layer direction.

As shown in Fig. 2, the utility model is using Sapphire Substrate as embodiment, to iii-nitride light emitting devices shown in FIG. 1 Production process be briefly described, to illustrate the structure of iii-nitride light emitting devices, specific preparation flow is as follows:

Step S1: a Sapphire Substrate 100 is provided, Sapphire Substrate 100 is put into cleaning machine and successively carries out pickling It is rinsed with deionized water, finally reuses hot nitrogen drying；

Step S2: Sapphire Substrate 100 is put into magnetron sputtering board, deposition thickness 20nm, and group is divided into the slow of AlN Rush layer 200；

Step S3: Sapphire Substrate 100 is taken out from magnetron sputtering board, is put into metal-organic chemical vapor deposition equipment In board (MOCVD), the reaction cavity pressure for controlling MOCVD is 100~600torr, and temperature is 1000~1200^oC, and be passed through and determine Nitrogen, hydrogen, ammonia and the trimethyl gallium gas of amount, growth thickness are 3 μm, and group is divided into the undoped nitride layer 300 of GaN；

Step S4: the reaction cavity pressure for controlling MOCVD is 200torr, and temperature is 1000~1200^oC, and be passed through quantitative Nitrogen, hydrogen, ammonia, silane and trimethyl gallium gas, growth thickness are 2 μm, and group is divided into the N-shaped nitride layer 400 of GaN, The Si doping concentration of middle N-shaped is 1E19 cm^-3；

Step S5: the reaction cavity pressure for adjusting MOCVD is 200torr, and temperature is 800~1000^oC, and be passed through quantitative Nitrogen, hydrogen, ammonia, silane, trimethyl indium and triethyl-gallium gas successively grow 3 periods, 6 periods and 9 week respectively The first multiple quantum well layer, the second multiple quantum well layer and the third multiple quantum well layer of phase, wherein the first well layer 511, the second well layer 512 Component with third well layer 513 is respectively In_0.02Ga_0.98N、In_0.06Ga_0.94N and In_0.12Ga_0.88N, thickness are all 3.5nm, and The component and thickness of first barrier layer 521, the second barrier layer 522 and third barrier layer 523 are all respectively GaN and 10nm；

Step S6: change the reaction cavity pressure of MOCVD to 500torr, temperature is 800~1000^oC, and be passed through quantitative Nitrogen, hydrogen, ammonia, two luxuriant magnesium and trimethyl gallium gas, growth thickness 80nm, group are divided into the p-type nitride layer 600 of GaN, Wherein the Mg doping concentration of p-type is 5E19 cm^-3。

It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that There is also other identical elements in process, method, article or equipment including the element.

While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims (7)

1. a kind of iii-nitride light emitting devices for promoting light emission luminance, including substrate, and be sequentially located on substrate buffer layer, Undoped nitride layer, N-shaped nitride layer, active layer and p-type nitride layer；It is characterized by: the active layer be by In_xGa_1-xThe well layer and In of N_yAl_zGa_1-y-zThe barrier layer of N is periodically alternately stacked and the multi-quantum pit structure that is formed, described active Layer successively includes the first multiple quantum well layer, the second multiple quantum well layer and third multiple quantum well layer by the direction of growth, more than described first Quantum well layer is the first well layer and the first barrier layer is alternately stacked by n1 period and is formed, the second multiple quantum well layer is the second well layer It is alternately stacked and is formed by n2 period with the second barrier layer, third multiple quantum well layer is third well layer and third barrier layer by n3 week Phase is alternately stacked and is formed, and described n1, n2 and n3 are positive integer and 2≤n1, n2, n3≤12.

2. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: described the One well layer, the second well layer and third well layer with a thickness of 1~5nm, the thickness of first barrier layer, the second barrier layer and third barrier layer For 5~20nm.

3. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: described slow Rushing layer is In_aAl_bGa_1-a-bN, wherein 0≤a≤0.2,0≤b≤1,0≤a+b≤1, with a thickness of 5~100nm.

4. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: described non- Doped nitride layer is In_cAl_dGa_1-c-dN, wherein 0≤c≤0.2,0≤d≤1,0≤c+d≤1, with a thickness of 1~5 μm.

5. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: the n Type nitride layer is In_eAl_fGa_1-e-fN, wherein 0≤e≤0.2,0≤f≤1,0≤e+f≤1, with a thickness of 1~5 μm.

6. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: the p Type nitride layer is In_gAl_hGa_1-g-hN, wherein 0≤p≤0.2,0≤q≤1,0≤g+h≤1, with a thickness of 20~200nm.

7. a kind of iii-nitride light emitting devices for promoting light emission luminance according to claim 1, it is characterised in that: the lining Bottom is sapphire (Al₂O₃) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride (AlN) substrate, gallium nitride (GaN) lining Bottom, gallium oxide (Ga₂O₃) one of substrate or zinc oxide (ZnO) substrate.