CN209481791U - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN209481791U CN209481791U CN201822131847.XU CN201822131847U CN209481791U CN 209481791 U CN209481791 U CN 209481791U CN 201822131847 U CN201822131847 U CN 201822131847U CN 209481791 U CN209481791 U CN 209481791U
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Abstract
The utility model provides a kind of reaction chamber and semiconductor processing equipment, including chamber body, the vacuum plant being connect with chamber body, pressure regulation pipeline and/or the first regulating valve and the pedestal being set in chamber body, wherein, pedestal includes the loading end of carrying substrates, and bleed-off passage is provided in pedestal, and one end of bleed-off passage is penetrated through to loading end, the other end is connected to vacuum plant；Vacuum plant is used to be evacuated bleed-off passage and chamber body；One end of pressure regulation pipeline is connect with vacuum plant, the other end is connected to chamber body, first regulating valve is arranged on bleed-off passage, and pressure regulation pipeline and/or the first regulating valve are used to adjust the pressure in bleed-off passage, and the pressure in bleed-off passage is made to be less than the pressure in chamber body.Reaction chamber and semiconductor processing equipment provided by the utility model can be avoided substrate positional shift on the base and generation the case where substrate is blown afloat even fragmentation, to improve the reliability of pedestal absorption substrate.
Description
Technical field
The utility model relates to semiconductor manufacturing equipment technical fields, and in particular, to a kind of reaction chamber and semiconductor
Process equipment.
Background technique
Currently, the indoor reaction pressure of chamber is higher, and in technical process in chemical vapor deposition (CVD) technique
Pressure range is larger, usually in 5Torr to 300Torr etc., and during needing pressure to rise or decline, pressure
The shorter the time of power variation the better, and after the reaction pressure for reaching required, and the indoor pressure stabilization of chamber can be made to react
Pressure.
It in the prior art, include chamber body, vacuum chuck (Vacuum for the reaction chamber of chemical vapor deposition
) and vacuum plant Chuck, wherein vacuum chuck is arranged in chamber body, vacuum plant respectively with chamber body and vacuum card
Disk connection, on the one hand for being evacuated to chamber inner body, on the other hand for being evacuated to vacuum chuck, so that vacuum card
Disk being capable of vacuum suction substrate (Wafer).
But the reaction chamber of the prior art has a large amount of gas short when carrying out a wide range of release in a short time
Enter vacuum plant in time, the pressure pulse formula in vacuum plant is caused to rise, and the pressure in vacuum plant influences whether
Pressure in vacuum chuck will lead to vacuum card when the pressure pulse value in vacuum plant is higher than the pressure in chamber body
Pressure in disk is greater than the pressure in chamber body, and vacuum chuck fails to the vacuum suction of substrate, so as to cause substrate true
Positional shift on empty calorie disk, the more serious substrate that will lead to are blown afloat even fragmentation.
Utility model content
The utility model aims to solve at least one of the technical problems existing in the prior art, proposes a kind of reaction chamber
And semiconductor processing equipment, it can be avoided the feelings that substrate positional shift on the base and substrate are blown afloat even fragmentation
Condition occurs, to improve the reliability of pedestal absorption substrate.
A kind of reaction chamber is provided to realize the purpose of this utility model, including chamber body and is set to the chamber
It is used for the pedestal of carrying substrates in ontology, the reaction chamber further includes vacuum plant, pressure regulation pipeline and/or the first regulating valve,
Wherein, the vacuum plant is connect with the chamber body, for being evacuated to the chamber body；
The pedestal includes the loading end for carrying the substrate, and is provided with bleed-off passage in the susceptor, and described
One end of bleed-off passage is penetrated through to the loading end, and the other end is connected to the vacuum plant, to pass through the vacuum plant
The bleed-off passage is evacuated；
One end of the pressure regulation pipeline is connect with the vacuum plant, and the other end is connected to the chamber body, for adjusting
The pressure in the bleed-off passage is saved, the pressure in the bleed-off passage is made to be less than the pressure in the chamber body；
First regulating valve is arranged on the bleed-off passage, for adjusting the pressure in the bleed-off passage, makes institute
State the pressure that the pressure in bleed-off passage is less than in the chamber body.
Preferably, the vacuum plant includes vacuum line and vacuum pump, and the vacuum line is connect with the vacuum pump,
And it is connected to the pressure regulation pipeline, the bleed-off passage and the chamber body, and the pressure regulation pipeline and the vacuum line
Connectivity part is relative to the bleed-off passage and the vacuum line connectivity part close to the vacuum pump.
Preferably, the pressure regulation pipeline includes the first pipe portion, the second pipe portion and third pipe portion, wherein first pipe portion
It is connected to the chamber body, second pipe portion is connected to the vacuum line, and the internal diameter of first pipe portion is less than described
The internal diameter of second pipe portion, the both ends of the third pipe portion are connected to first pipe portion and second pipe portion respectively, and described
Interior the first pipe portion described without leave of third pipe portion is gradually increased to second pipe portion.
Preferably, the internal diameter of second pipe portion is identical as the internal diameter of the vacuum line.
Preferably, on-off valve is provided on the surge pipe road.
Preferably, the second regulating valve is additionally provided on the surge pipe road.
Preferably, first regulating valve includes needle-valve.
Preferably, second regulating valve includes throttle valve.
Preferably, first through hole and the second through-hole, and the first through hole are provided on the peripheral wall of the chamber body
It is arranged on the bottom wall of the chamber body, second through-hole is arranged on the side wall of the chamber body, the vacuum tube
Road is connected to the first through hole, and the pressure regulation pipeline is connected to second through-hole.
The utility model also provides a kind of semiconductor processing equipment, including the above-mentioned reaction chamber, for adjusting
The pressure in bleed-off passage is stated, the pressure in the bleed-off passage is made to be less than the pressure in the chamber body.
The utility model has the following beneficial effects:
Reaction chamber provided by the utility model, when being evacuated by vacuum plant to chamber body, by one end
It is connect with vacuum plant, the pressure regulation pipeline that the other end is connected to chamber body, adjusts the pressure in the bleed-off passage in pedestal, make
Pressure in bleed-off passage is less than the pressure in chamber body, and/or by first be arranged on the bleed-off passage in pedestal
Regulating valve adjusts the pressure in the bleed-off passage in pedestal, and the pressure in bleed-off passage is made to be less than the pressure in chamber body, from
And the case where avoiding substrate positional shift on the base and substrate from being blown afloat even fragmentation generation, and then improve pedestal and inhale
The reliability of attached substrate.
Semiconductor processing equipment provided by the utility model, including reaction chamber provided by the utility model, for adjusting
Pressure in pedestal in bleed-off passage makes the pressure in bleed-off passage be less than the pressure in chamber body, so that substrate be avoided to exist
Positional shift and substrate on pedestal are blown afloat the generation of the case where even fragmentation, and then improve the reliable of pedestal absorption substrate
Property.
Detailed description of the invention
Fig. 1 is a kind of chamber for being used for chemical vapor deposition in the prior art；
Fig. 2 be the change of prior art middle chamber stress-relief process lumen chamber pressure and back pressure process；
Fig. 3 is the structural schematic diagram of the embodiment one of reaction chamber provided by the utility model；
Fig. 4 is the structural schematic diagram of the embodiment two of reaction chamber provided by the utility model；
Fig. 5 is the structural schematic diagram of the embodiment three of reaction chamber provided by the utility model；
Description of symbols:
11- chamber body；12- dry pump；13- fore vacuum pipeline；14- throttle valve；15- substrate；16- vacuum chuck；17-
Chuck pipeline；18- chamber pressure；19- back pressure；The first pulse of 191-；The second pulse of 192-；21- chamber body；22- substrate；
23- pedestal；24- bleed-off passage；The first regulating valve of 31-；32- pressure regulation pipeline；321- on-off valve；41- vacuum line；42- vacuum
Pump；51- first through hole；The second through-hole of 52-.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, come with reference to the accompanying drawing to this
The reaction chamber and semiconductor processing equipment that utility model provides are described in detail.
As depicted in figs. 1 and 2, in the prior art, reaction chamber includes chamber body 11, dry pump 12, fore vacuum pipe
Road (Foreline) 13, vacuum chuck 16, wherein fore vacuum pipeline 13 is connect with dry pump 12, and is connected to chamber 11, and
Throttle valve 14 is set on fore vacuum pipeline 13, and vacuum chuck 16 includes penetrating through the chuck pipeline 17 of its own and for carrying base
The loading end of piece 15, and 17 one end of chuck pipeline is penetrated through to loading end, the other end is connect with fore vacuum pipeline 13, so as to
Enough chuck pipeline 17 is evacuated by dry pump 12, substrate 15 is adsorbed on vacuum chuck 16.
But in existing technical process, the reaction pressure in chamber body 11 is according to different process requirements, variation
Range is possible to from tens supports (Torr) to several hundred supports, when carrying out release to chamber body 11, in order to not influence technique knot
Fruit, it is necessary to which completion release as fast as possible passes through dry pump at this time, it may be necessary to open the throttle valve 14 on fore vacuum pipeline 13
12 pairs of fore vacuum pipelines 13 are evacuated, thus discharge into the bulk gas in chamber body 11 in fore vacuum pipeline 13,
To reduce chamber pressure 18, and a large amount of gas enters fore vacuum pipeline 13 in the short time, will lead to fore vacuum pipeline 13
Interior pressure pulse formula rises, and the pressure in fore vacuum pipeline 13 influences whether the pressure in chuck pipeline 17, currently
When pressure pulse value in grade vacuum line 13 is higher than chamber pressure 18, the pressure in chuck pipeline 17 will be higher than chamber pressure
18.At this point, substrate 15 contacts the pressure of one side (that is, backside pressure of substrate 15, hereinafter referred to as back pressure 19) with vacuum chuck 16
Substrate 15 be will be higher than towards the pressure inside chamber body 11 for technique processing one side (that is, positive pressure of substrate 15),
The back pressure 19 of this substrate 15 is higher than the appearance of positive pressure situation, will lead to vacuum chuck 16 and loses to the vacuum suction of substrate 15
Effect, will cause substrate 15 on vacuum chuck 16 positional shift and substrate 15 blown afloat even fragmentation the case where generation.
Fig. 2 is described in the prior art, when carrying out release to chamber body 11, the variation of chamber pressure 18 and back pressure 19
State, as shown in Figure 2 during 11 release of chamber body, back pressure 19 forms two subpulses, is the first pulse 191 respectively
With the second pulse 192, and the value of the second pulse 192 be greater than chamber pressure 18 value, here it is the back pressures 19 of substrate 15 to be higher than
The case where positive pressure, will cause positional shift and substrate 15 of the substrate 15 on vacuum chuck 16 to be blown afloat even broken
The case where splitting.
The present embodiment provides a kind of reaction chamber, including chamber body 21, it is set in chamber body 21 for carrying base
Pedestal 23, vacuum plant, pressure regulation pipeline 32 and/or the first regulating valve 31 of piece 22, wherein vacuum plant and chamber body 21 connect
It connects, for being evacuated to chamber body 21；Pedestal 23 includes the loading end of carrying substrates 22, and pumping is provided in pedestal 23
Gas channel 24, and one end of bleed-off passage 24 is penetrated through to loading end, the other end is connected to vacuum plant, to pass through vacuum plant
Bleed-off passage 24 is evacuated；One end of pressure regulation pipeline 32 is connect with vacuum plant, and the other end is connected to chamber body 21, is used
In adjusting the pressure in bleed-off passage 24, the pressure in bleed-off passage 24 is made to be less than the pressure in chamber body 21；First is adjusted
Valve 31 is arranged on bleed-off passage 24, for adjusting the pressure in bleed-off passage 24, the pressure in bleed-off passage 24 is made to be less than chamber
Pressure in room ontology 21.
Reaction chamber provided by the utility model, when being evacuated by vacuum plant to chamber body 21, by one
End is connect with vacuum plant, the pressure regulation pipeline 32 that the other end is connected to chamber body 21, adjusts the bleed-off passage 24 in pedestal 23
Interior pressure makes pressure in bleed-off passage 24 be less than the pressure in chamber body 21, and/or by being arranged in pedestal 23
The first regulating valve 31 on bleed-off passage 24 adjusts the pressure in the bleed-off passage 24 in pedestal 23, makes in bleed-off passage 24
Pressure is less than the pressure in chamber body 21, so that positional shift and substrate 22 of the substrate 22 on pedestal 23 be avoided to be blown
The case where playing even fragmentation occurs, and then improves the reliability that pedestal 23 adsorbs substrate 22.
In the present embodiment, vacuum plant includes vacuum pump 42 and vacuum line 41, and vacuum line 41 and vacuum pump 42 connect
It connects, and is connected to chamber body 21, bleed-off passage 24 and pressure regulation pipeline 32, and pressure regulation pipeline 32 and 41 connectivity part phase of vacuum line
For bleed-off passage 24 and 41 connectivity part of vacuum line close to vacuum pump 42.
In practical applications, throttle valve and on-off valve can also be set on vacuum line 41, when carrying out in chamber body 21
When boosting, throttle valve and on-off valve are closed, and bulk gas is passed through in chamber body 21, so that the pressure in chamber body 21
It increases.In technical process, air inflow is remained unchanged or is slightly variable, and opens on-off valve, and constantly adjust opening by throttle valve
Angle adjusts the speed of exhaust of vacuum line 41, matches air inflow and sucking rate, keeps the pressure in chamber body 21 real
Existing dynamic stability, to keep the pressure in chamber body 21 to be greater than the pressure in bleed-off passage 24.When being carried out in chamber body 21
When release, air inflow is reduced, and throttle valve is opened, and the gas in chamber body 21 is discharged from vacuum line 41, to reduce chamber
The indoor pressure of 21 chamber of room ontology.But the form of vacuum plant is not limited.
In practical applications, vacuum pump 42 can use dry pump, but the type of vacuum pump 42 is not limited, in addition,
The quantity of pressure regulation pipeline 32 can be one or more.
In the present embodiment, vacuum line 41 is evacuated by vacuum pump 42, to be evacuated to bleed-off passage 24,
The pressure in bleed-off passage 24 is set to be less than the pressure in chamber body 21, and in technical process, by adjusting vacuum line 41
On throttle valve open angle, be maintained at the pressure in bleed-off passage 24 less than the pressure in chamber body 21, thus will
Substrate 22 is adsorbed on pedestal 23.
Embodiment one as shown in Figure 3, reaction chamber include chamber body 21, pedestal 23, vacuum plant and pressure regulation pipeline
32, without including the first regulating valve 31, one end of pressure regulation pipeline 32 connect with vacuum plant, the other end and the company of chamber body 21
It is logical, and pressure regulation pipeline 32 and 41 connectivity part of vacuum line relative to bleed-off passage 24 and 41 connectivity part of vacuum line close to vacuum pump
42.When chamber body 21 carries out release, throttle valve and on-off valve on vacuum line 41 are maintained at state when carrying out technique,
Chamber body 21 is evacuated by pressure regulation pipeline 32, the bulk gas in chamber body 21 is extracted out, and is extracted out big
Amount gas is discharged in vacuum pump 4 merely through pressure regulation pipeline 32 and vacuum line 41, and logical without bleed-off passage 24 and pumping
The connectivity part in road 24 also would not form pressure pulse formula in the connectivity part of bleed-off passage 24 and bleed-off passage 24 and rise, also not
Pressure pulse formula can be formed in bleed-off passage 24 and in bleed-off passage 24 to rise, this just keeps the pressure in bleed-off passage 24
In the pressure being less than in chamber body 21, positional shift and substrate 22 of the substrate 22 on pedestal 23 is avoided to be blown afloat even
The case where fragmentation, occurs, to improve the reliability that pedestal 23 adsorbs substrate 22.
In the present embodiment, pressure regulation pipeline 32 includes the first pipe portion, the second pipe portion and third pipe portion, wherein the first pipe portion
Be connected to chamber body 21, the second pipe portion is connected to vacuum line 41, the internal diameter of the first pipe portion less than the second pipe portion internal diameter,
The both ends of three pipe portions are connected to the first pipe portion and the second pipe portion respectively, and interior first pipe portion without leave of third pipe portion is to the second pipe portion
It is gradually increased.Specifically, chamber body 21, the first pipe portion, third pipe portion, the second pipe portion and vacuum line 41 is sequentially connected and phase
It is intercommunicated, so that vacuum pump 42 is evacuated by the second pipe portion, third pipe portion and the first pipe portion to chamber body 21, and
Since the internal diameter of the second pipe portion is greater than the internal diameter of the first pipe portion, avoid when pressure regulation pipeline 32 is evacuated chamber body 21,
Gas is accumulated in the first pipe portion, so that gas smooth can circulate in pressure regulation pipeline 32.
In the present embodiment, the internal diameter of internal diameter with vacuum line 41 of the second pipe portion is identical, can make surge pipe road 32 most
Limits the gas in chamber body 21 is discharged, improves the release efficiency to chamber body 21, and can be to avoid surge pipe
The gas that road 32 is discharged is accumulated in vacuum line 41, further avoids forming pressure pulse in vacuum line 21.
In practical applications, pressure regulation pipeline 32 can also only include third pipe portion, third pipe portion respectively with chamber body 21
It is connected to vacuum line 41, and the interior chamber body without leave 21 of third pipe portion is gradually increased to vacuum line 41.
In practical applications, vacuum line 41 can also use the set-up mode of pressure regulation pipeline 32, that is, include the first pipe portion,
Second pipe portion and third pipe portion, wherein the first pipe portion is connected to chamber body 21, and the second pipe portion is connect with vacuum pump 42, and first
Less than the internal diameter of the second pipe portion, the both ends of third pipe portion are connected to the first pipe portion and the second pipe portion the internal diameter of pipe portion respectively, and
Interior first pipe portion without leave of three pipe portions is gradually increased to the second pipe portion.Or can also only include third pipe portion, third pipe portion with
Vacuum pump 42 connects, and is connected to chamber body 21, and the interior chamber body without leave 21 of third pipe portion gradually increases to vacuum pump 42
Greatly.
In practical applications, on-off valve 321 is provided on pressure regulation pipeline 32, when carrying out release to chamber body 21,
On-off valve 321 is opened, when carrying out technique or chamber body 21 is boosted, closes on-off valve 321.
In practical applications, it is also provided with the second regulating valve on pressure regulation pipeline 32, is carried out to chamber body 21
When release, the angle that can be opened by the second regulating valve of control, according to actual needs, to the speed of exhaust on surge pipe road 32 into
Row adjustment.During carrying out technique, the angle that can be opened by the second regulating valve of control passes through according to the technological requirements
Pressure regulation pipeline 32 and vacuum line 41 realize dynamic stability to the pressure in chamber body 21 jointly.It is risen in chamber body 21
When pressure, the second regulating valve is closed, and be passed through bulk gas into chamber body 21, so that the pressure rise in chamber body 21.
In practical applications, on-off valve 321 can be only set on pressure regulation pipeline 32, on-off valve 321 and also can be set
Two regulating valves, but be not limited to that on-off valve 321 and the second regulating valve is only arranged.Second regulating valve includes throttle valve, but second
The form of regulating valve is not limited to this.
In the present embodiment, first through hole 51 and the second through-hole 52, and first are provided on the peripheral wall of chamber body 21
Through-hole 51 is arranged on the bottom wall of chamber body 21, and the second through-hole 52 is arranged on the side wall of chamber body 21, vacuum line 41
It is connected to first through hole 51, pressure regulation pipeline 32 is connected to the second through-hole 52, and such design can be to avoid to chamber body 21
When being evacuated, the gas in chamber body 21 is concentrated at first through hole 51, also it is avoided that gas concentrates on vacuum line 41
Interior, the pressure initiation pulsed further avoided in vacuum line 41 rises.
In practical applications, the second through-hole 52 can be set on the side wall close to first through hole 51, to enhance surge pipe
Shunting function of the road 32 to vacuum line 41.
Embodiment two as shown in Figure 4, reaction chamber include chamber body 21, pedestal 23, vacuum plant and the first adjusting
Valve 31, without include pressure regulation pipeline 32, the first regulating valve 31 be arranged on bleed-off passage 24, one end of bleed-off passage 24 penetrate through to
On the loading end of pedestal 23, the other end is connected to vacuum line 41.When chamber body 21 carries out release, by the first regulating valve
31 adjust the internal diameter of bleed-off passage 24, with circulation of the regulating gas in bleed-off passage 24, reduce the internal diameter of bleed-off passage 24,
Making the circulation of gas in bleed-off passage 24 reduces, and rises accordingly even when forming pressure pulse formula in vacuum line 41, internal diameter subtracts
Small bleed-off passage 24 can stop the gas in vacuum line 41 to be rapidly introduced into bleed-off passage 24, inhibit bleed-off passage 24
Middle formation pressure pulse formula rises, and is maintained at the pressure in bleed-off passage 24 less than the pressure in chamber body 21, to keep away
Exempt from substrate 22 on pedestal 23 positional shift and substrate 22 blown afloat even fragmentation the case where generation, and then improve pedestal
The reliability of 23 absorption substrates 22.
In practical applications, the first regulating valve 31 includes needle-valve, and still, the form of the first regulating valve 31 is not limited to this,
As long as the internal diameter of bleed-off passage 24 can be changed.
Embodiment three as shown in Figure 5, reaction chamber include chamber body 21, pedestal 23, vacuum plant, pressure regulation pipeline 32
With the first regulating valve 31, wherein one end of pressure regulation pipeline 32 is connect with vacuum plant, and the other end is connected to chamber body 21, and
Pressure regulation pipeline 32 and 41 connectivity part of vacuum line relative to bleed-off passage 24 and 41 connectivity part of vacuum line close to vacuum pump 42, the
One regulating valve 31 be arranged on bleed-off passage 24, one end of bleed-off passage 24 is penetrated through to the loading end of pedestal 23, the other end with
Vacuum line 41 is connected to.Embodiment three is the combination of embodiment one and embodiment two, can use pressure regulation pipeline 32 simultaneously
The air pressure in bleed-off passage 24 is adjusted with the first regulating valve 31.
When chamber body 21 carries out release, chamber body 21 is evacuated by pressure regulation pipeline 32, by chamber sheet
Bulk gas extraction in body 21, and the bulk gas extracted out is discharged to vacuum pump merely through pressure regulation pipeline 32 and vacuum line 41
It, also would not be in bleed-off passage 24 and vacuum line 41 in 42, and without the connectivity part of bleed-off passage 24 and vacuum line 41
Connectivity part formed pressure pulse formula rise, will not in bleed-off passage 24 and bleed-off passage 24 in formed pressure pulse formula on
It rises, and is subtracted by the internal diameter that the first regulating valve 31 adjusts bleed-off passage 24 with circulation of the regulating gas in bleed-off passage 24
The internal diameter of small bleed-off passage 24 reduces the circulation of the gas in bleed-off passage 24, accordingly even when being formed in bleed-off passage 24
Pressure pulse formula rises, and the bleed-off passage 24 that internal diameter reduces can also stop the gas in vacuum line 41 to be rapidly introduced into pumping
In channel 24, inhibit to form pressure pulse formula in bleed-off passage 24 and rise, passes through being total to for pressure regulation pipeline 32 and the first regulating valve 31
Same-action, make it is more flexible to the pressure regulative mode in bleed-off passage 24, convenient for being maintained at the pressure in bleed-off passage 24
Less than the pressure in chamber body 21, so that positional shift and substrate 22 of the substrate 22 on pedestal 23 be avoided to be blown afloat very
Occur to the case where fragmentation, and then improves the reliability that pedestal 23 adsorbs substrate 22.
As another technical solution, the present embodiment also provides a kind of semiconductor processing equipment, including above-mentioned reaction chamber
Room makes the pressure in bleed-off passage 24 be less than the pressure in chamber body 21 for adjusting the pressure in bleed-off passage 24, thus
Avoid substrate 22 on pedestal 23 positional shift and substrate 22 blown afloat even fragmentation the case where generation, and then improve base
Seat 23 adsorbs the reliability of substrate 22.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and uses exemplary
Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case where the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With novel protection scope.
Claims (10)
1. a kind of reaction chamber including chamber body and is set to the pedestal in the chamber body for carrying substrates, special
Sign is that the reaction chamber further includes vacuum plant, pressure regulation pipeline and/or the first regulating valve, wherein the vacuum plant with
The chamber body connection, for being evacuated to the chamber body；
The pedestal includes the loading end for carrying the substrate, and is provided with bleed-off passage in the susceptor, and the pumping
The one end in channel is penetrated through to the loading end, and the other end is connected to the vacuum plant, to pass through the vacuum plant to institute
Bleed-off passage is stated to be evacuated；
One end of the pressure regulation pipeline is connect with the vacuum plant, and the other end is connected to the chamber body, for adjusting
The pressure in bleed-off passage is stated, the pressure in the bleed-off passage is made to be less than the pressure in the chamber body；
First regulating valve is arranged on the bleed-off passage, for adjusting the pressure in the bleed-off passage, makes the pumping
Pressure in gas channel is less than the pressure in the chamber body.
2. reaction chamber according to claim 1, which is characterized in that the vacuum plant includes vacuum line and vacuum
Pump, the vacuum line are connect with the vacuum pump, and are connected with the pressure regulation pipeline, the bleed-off passage and the chamber body
It is logical, and the pressure regulation pipeline is leaned on the vacuum line connectivity part relative to the bleed-off passage and the vacuum line connectivity part
The nearly vacuum pump.
3. reaction chamber according to claim 2, which is characterized in that the pressure regulation pipeline includes the first pipe portion, the second pipe
Portion and third pipe portion, wherein first pipe portion is connected to the chamber body, and second pipe portion and the vacuum line connect
Logical, the internal diameter of first pipe portion is less than the internal diameter of second pipe portion, and the both ends of the third pipe portion are respectively with described first
Pipe portion is connected to second pipe portion, and interior the first pipe portion described without leave of the third pipe portion gradually increases to second pipe portion
Greatly.
4. reaction chamber according to claim 3, which is characterized in that the internal diameter and the vacuum line of second pipe portion
Internal diameter it is identical.
5. reaction chamber according to claim 1, which is characterized in that be provided with on-off valve on the surge pipe road.
6. reaction chamber according to claim 1-5, which is characterized in that be additionally provided on the surge pipe road
Second regulating valve.
7. reaction chamber according to claim 1, which is characterized in that first regulating valve includes needle-valve.
8. reaction chamber according to claim 6, which is characterized in that second regulating valve includes throttle valve.
9. reaction chamber according to claim 2, which is characterized in that be provided with first on the peripheral wall of the chamber body
Through-hole and the second through-hole, and the first through hole is arranged on the bottom wall of the chamber body, second through-hole is arranged in institute
It states on the side wall of chamber body, the vacuum line is connected to the first through hole, the pressure regulation pipeline and second through-hole
Connection.
10. a kind of semiconductor processing equipment, which is characterized in that the reaction chamber including claim 1-9 any one is used
In adjusting the pressure in the bleed-off passage, the pressure in the bleed-off passage is made to be less than the pressure in the chamber body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822131847.XU CN209481791U (en) | 2018-12-18 | 2018-12-18 | Reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822131847.XU CN209481791U (en) | 2018-12-18 | 2018-12-18 | Reaction chamber and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209481791U true CN209481791U (en) | 2019-10-11 |
Family
ID=68118557
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| CN201822131847.XU Active CN209481791U (en) | 2018-12-18 | 2018-12-18 | Reaction chamber and semiconductor processing equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113389706A (en) * | 2021-07-09 | 2021-09-14 | 长鑫存储技术有限公司 | Vacuum system, low-pressure vacuum process equipment and stop piece |
| EP3945143A1 (en) * | 2020-07-31 | 2022-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool |
| CN114622187A (en) * | 2022-03-23 | 2022-06-14 | 广东省智能机器人研究院 | Heating device of MOCVD equipment |
-
2018
- 2018-12-18 CN CN201822131847.XU patent/CN209481791U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3945143A1 (en) * | 2020-07-31 | 2022-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool |
| CN113389706A (en) * | 2021-07-09 | 2021-09-14 | 长鑫存储技术有限公司 | Vacuum system, low-pressure vacuum process equipment and stop piece |
| CN114622187A (en) * | 2022-03-23 | 2022-06-14 | 广东省智能机器人研究院 | Heating device of MOCVD equipment |
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