CN209039582U - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipment Download PDFInfo
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- CN209039582U CN209039582U CN201821764898.XU CN201821764898U CN209039582U CN 209039582 U CN209039582 U CN 209039582U CN 201821764898 U CN201821764898 U CN 201821764898U CN 209039582 U CN209039582 U CN 209039582U
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- semiconductor manufacturing
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Abstract
The utility model provides a kind of semiconductor manufacturing equipment, one section of by-pass line in parallel on pump-line, an and built-in Gas flow-limiting device in the by-pass line, stablize pumping efficiency by Gas flow-limiting device, so as to improve the unstable problem of dynamic pressure, reduce and reduce the intracorporal dynamic pressure variation of chamber, thus, board maintenance period can be effectively reduced, lifting means board production capacity utilization rate, the problem of leading to particle contamination because of cavity pressure dynamic change is reduced, simultaneously to avoid product yield decline.
Description
Technical field
The utility model relates to semiconductor production manufacturing technology field, in particular to a kind of semiconductor manufacturing equipment.
Background technique
Chemical vapor deposition (Chemical Vapor Deposition, abbreviation CVD) technology is reactive material in gaseous state item
Part issues biochemical reaction, generates the solid matrix surface that solid matter is deposited on heating, and then the technique that solid material is made
Technology.Chemical vapor deposition method include aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (LPCVD), etc. from
Daughter enhances the methods of chemical vapor deposition.Wherein, low-pressure chemical vapor deposition method is with semiconductor technology characteristic size
Reduction, occur to the continuous improvement that the uniformity requirement and film thickness error of film require.Low-pressure chemical vapor deposition
(LPCVD) method refers to a kind of method of chemical vapor deposition of the system work under lower pressure, with the speed of growth
Fastly, the features such as film forming is fine and close, uniform, and load capacity is big, is applied not only to prepare silicon epitaxy layer, is also widely used in silica, nitrogen
The deposition of SiClx, various amorphous passivating films and polysilicon membrane.
Current low pressure chemical vapor deposition equipment is mostly furnace tube device, referring to FIG. 1, comprising: pedestal 100, setting
Boiler tube (i.e. settling chamber) 101 on pedestal 100 passes through the vacuum pump 103 that pump-line 102 is connected to boiler tube 101.Vacuum pump
103 are used to keep the low pressure in boiler tube 101.Pressure in boiler tube 101 is stablized in the wafer surface being placed in boiler tube 101
Particle contamination and quality of forming film it is most important, but with the progress of technique, rely solely on vacuum pump 103 and be not enough to boiler tube
Interior pressure maintains to stablize.
With continued reference to FIG. 1, the scheme of the pressure in a kind of stable boiler tube 101 in the prior art is: in pump-line
Residual gas discharge tube 104 of the access one with relief valve 105 on 102,104 other end of residual gas discharge tube connect residual gas processing dress
It sets or atmospheric environment etc., it can be with the pressure in dynamic stability boiler tube 101 using the size adjustment effect of relief valve 105.But work
By-product can be accumulated in residual gas discharge tube 104 with the flowing of residual gas and is attached on relief valve 105 in skill, work as accumulation
It will result in the blocking of relief valve 105 to a certain extent, and then make the disabler of relief valve 105, cause outer gas recharge to boiler tube
In 101, that is, the pressure anomaly in boiler tube 101 is caused to fluctuate, as shown in the dotted line frame in Fig. 2, while can also not expecting
Particle be back in boiler tube 101 with outer gas, to make to generate undesirable byproduct in technique, and may make in processing
Wafer scrap, cause product yield to decline.
Referring to FIG. 3, another scheme for stablizing the pressure in boiler tube 101 in the prior art is: in pump-line 102
Upper by-pass line 106 of the access one with extraction valve 107 is realized using the size adjustment effect of extraction valve 107 to pump-line
102 low discharge pumping, with the pressure in dynamic stability boiler tube 101.But extraction valve 107 is not easy with adjustment and stability
Insufficient defect, especially when needing to unload cassette (Boat unload) out of boiler tube 101, the suction performance of extraction valve 107 out
The excessive and too small pressure anomaly fluctuation that will cause in boiler tube 101, such as the dotted line frame institute in the dotted line frame and Fig. 4 B in Fig. 4 A
Show, it is unstable to thereby result in board production capacity, and influence product yield.
In addition, the relief valve of above scheme and the higher cost of extraction valve.
Utility model content
The purpose of this utility model is to provide a kind of semiconductor manufacturing equipments, can stablize cavity pressure, are produced with improving
Product yield.
In order to solve the above technical problems, the utility model provides a kind of semiconductor manufacturing equipment, comprising:
Process cavity has air inlet and air outlet；
Pump-line, the pump-line connect the gas outlet；And
At least one by-pass line is arranged in parallel with one section of the pump-line, is built-in with gas in the by-pass line
Body current limiter, the Gas flow-limiting device include the baffle at least one current limliting through-hole, the outer of the baffle and the side
It threads a pipe sealed connection.
Optionally, the current limliting through-hole has fixed bore, and the fixed bore is 3mm~8mm.
Optionally, when the current limliting through-hole on the baffle is multiple, all current limliting through-holes are uniformly distributed.
Optionally, the speed of exhaust in the by-pass line is 3slm~10slm per second.
Optionally, the bore of the by-pass line is less than the bore of the pump-line.
Optionally, the pump-line and/or the process cavity are equipped with pressure gauge.
Optionally, the pump-line is equipped with Pneumatic valve with one section that the by-pass line is arranged in parallel.
Optionally, the semiconductor manufacturing equipment further includes vacuum pump, and the vacuum pump connects the pump-line.
Optionally, the semiconductor manufacturing equipment is chemical vapor depsotition equipment, Pvd equipment, etching are set
Standby, furnace tube device or ion implantation equipment.
Optionally, when the semiconductor manufacturing equipment be furnace tube device when, the furnace tube device include pedestal, cassette and
Open at one end, the closed boiler tube of the other end, the opening end in contact of the pedestal and the boiler tube are simultaneously constituted closed with the boiler tube
Space, using as the process cavity；The cassette is installed on the pedestal and is contained in inside the boiler tube.
Compared with prior art, the semiconductor manufacturing equipment of the utility model has the advantages that
1, one section of by-pass line in parallel on pump-line, and a built-in Gas flow-limiting device in the by-pass line, lead to
It crosses Gas flow-limiting device and stablizes pumping efficiency, so as to improve the unstable problem of dynamic pressure, reduce and reduce the intracorporal dynamic of chamber
Board maintenance period, lifting means board production capacity utilization rate can be effectively reduced as a result, while reducing because of intracavitary pressure for pressure change
Power dynamic change and the problem of lead to particle contamination, to avoid product yield decline.
2, Gas flow-limiting device is arranged in by-pass line, and is the baffle at least one current limliting through-hole, at low cost, and
Adjusting at various pressures may be implemented, control precision is high, pressure is stablized.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of furnace tube device for LPCVD technique and with relief valve.
Fig. 2 is that (relief valve blocking occurs for pressure curve schematic diagram of the furnace tube device shown in FIG. 1 in the boiler tube when losing heart
Situation).
Fig. 3 is the structural schematic diagram of another furnace tube device for LPCVD technique and with extraction valve.
Fig. 4 A is pressure curve schematic diagram when extraction valve pumping efficiency is excessive in furnace tube device shown in Fig. 3.
Fig. 4 B is pressure curve schematic diagram when extraction valve pumping efficiency is too small in furnace tube device shown in Fig. 3.
Fig. 5 is the schematic diagram of the section structure of the semiconductor manufacturing equipment of an embodiment of the present invention.
Fig. 6 is the overlooking structure diagram of the Gas flow-limiting device of an embodiment of the present invention.
Fig. 7 is the metering function schematic diagram of Gas flow-limiting device shown in fig. 6.
Fig. 8 is the pressure controlling curve schematic diagram of semiconductor manufacturing equipment shown in fig. 5 in use.
Fig. 9 A is the overlooking structure diagram of the Gas flow-limiting device of another embodiment of the utility model.
Fig. 9 B is the overlooking structure diagram of the Gas flow-limiting device of another embodiment of the utility model.
Figure 10 is the schematic diagram of the section structure of the semiconductor manufacturing equipment of another embodiment of the utility model.
Wherein, appended drawing reference is as follows:
100,200- pedestal；101,201- boiler tube；102,202- pump-line；103,203- vacuum pump；104- residual gas row
Put pipeline；105- relief valve；106,204- by-pass line；107- extraction valve；2011- air inlet；The gas outlet 2012-；204a-
Bypass line road；The second by-pass line of 204b-；205- Gas flow-limiting device；205a- first gas current limiter；205b- second gas
Current limiter；206- Pneumatic valve；207- cassette.
Specific embodiment
To be clearer and more comprehensible the purpose of this utility model, feature, with reference to the accompanying drawing to the technical side of the utility model
Case is described in detail, however, the utility model can be realized with different forms, it should not be to be confined to the implementation
Example.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the utility model embodiment.
Referring to FIG. 5, an embodiment of the present invention provides a kind of semiconductor manufacturing equipment, comprising: a process cavity, one take out
Feed channel 202, a vacuum pump 203, bypass line road 204 and Gas flow-limiting device 205.
The semiconductor manufacturing equipment of the present embodiment be furnace tube device, further include pedestal 200, cassette 207 and it is open at one end,
The closed boiler tube 201 of the other end, the opening end in contact of the pedestal 200 and the boiler tube 201 are simultaneously constituted close with the boiler tube 201
Space is closed, using as the process cavity；The cassette 207 is installed on the pedestal 200 and is contained in the boiler tube 201
Portion.The boiler tube 201 has inner tube (not shown), outer tube (not shown) and air inlet 2011 and gas outlet 2012, described interior
Pipe sleeve is located at the outer tube, the both ends open of said inner tube, the open at one end of the outer tube, other end closing, it is described into
Port 2011 is connected to said inner tube, and the gas outlet 2012 is connected to the space between said inner tube and the outer tube.
One end of the pump-line 202 connects the gas outlet 2012, and the other end connects the vacuum pump 203.It is described
One section of by-pass line 204 and the pump-line 202 is arranged in parallel, i.e., one end of the described by-pass line 204 is from the pumping
The somewhere of pipeline 202 is drawn, and the other end is connected to another place of the pump-line 202.The bore of the by-pass line 204
Less than the bore of the pump-line 202.Optionally, the pump-line 202 and/or the process cavity are equipped with pressure gauge
(not shown), to monitor the air pressure inside the process cavity in real time.Optionally, the pump-line 202 and the by-pass line
It is additionally provided with Pneumatic valve 206 on 204 one sections be arranged in parallel, for significantly regulating and controlling the gas flow rate in the pump-line 202.
Fig. 5 and Fig. 6 are please referred to, the Gas flow-limiting device 205 is built in the by-pass line 204.In order to reduce cost,
The Gas flow-limiting device 205 is preferably a baffle with a current limliting through-hole 2051, the outer of the baffle and the bypass
Pipeline 204 is tightly connected.The baffle can be integrally formed with the by-pass line 204, be fully sealed with realizing.The current limliting
Through-hole 2051 has fixed bore, and the fixed bore is 3mm~8mm, for example, 5mm.Referring to FIG. 7, gas is from exhaust tube
After road 202 enters by-pass line 204, since the bore of the current limliting through-hole 2051 of Gas flow-limiting device 205 is less than by-pass line 204
Bore thus limits gas flow rate degree, for example, make the speed of exhaust in the by-pass line 204 be 3slm per second~
10slm, it may also be said to, the by-pass line 204 is the pipeline that the speed of exhaust is 3slm~10slm per second, it is possible thereby to improve
The unstable problem of dynamic pressure in boiler tube 201 reduces and reduces the dynamic pressure in boiler tube 201 (i.e. in process cavity) and becomes
Change, board maintenance period, lifting means board production capacity utilization rate can be effectively reduced as a result, while reducing because of cavity pressure dynamic
The problem of changing and leading to particle contamination, to avoid product yield decline.
In the other embodiments of the utility model, the baffle of the Gas flow-limiting device 205, which can use, to be had centainly
The elastic material of elastic-restoring force makes, it is possible thereby to buffer the gas punching poured in by-pass line 204 from pump-line 202
Power extends the service life of the Gas flow-limiting device 205.
Fig. 5 and Fig. 8 are please referred to, the side of low-pressure chemical vapor deposition is carried out using the semiconductor manufacturing equipment of the utility model
Method includes following procedure: firstly, by being sent into boiler tube 201 in wafer load to cassette 207 and by cassette 207, boiler tube at this time
Air pressure in 201 is atmospheric pressure, i.e., t1 moment pervious curve in corresponding diagram 8；When cassette 207 is completely into boiler tube 201,
Vacuum pump 203 and Pneumatic valve 206 are opened, the air pressure in boiler tube 201 is gradually reduced, and pumping process lasts up in boiler tube 201
Air pressure reaches the low pressure of requirement hereinafter, curve i.e. in corresponding diagram 8 in t1 to t2 period；Then, stop pumping, be passed through reaction
Gas, the stable gas pressure in boiler tube 201 is in a certain numerical value, while deposition film on the wafer surface, i.e. t2 to t3 in corresponding diagram 8
Curve in period；After the completion of film deposition, stop being passed through for the reaction gas, and be further turned off vacuum pump 203,
So that atmosphere is fed back in boiler tube 201, the air pressure in boiler tube 201 is gradually increasing, until the air pressure in boiler tube 201 reaches atmosphere
Pressure, i.e. curve in corresponding diagram 8 in t3 to t4 period；Then, cassette 207 is removed out of boiler tube 201, and is unloaded from cassette
Wafer after carrying reaction.It can be seen that in whole process from the curve in Fig. 8, extraordinary wave does not occur in the pressure of boiler tube 201
Dynamic, when especially wafer is loaded and unloaded, pressure control is stablized, as shown in two dotted line frames in Fig. 8.
One current limliting through-hole with fixed bore is only set in above-described embodiment, on the baffle of Gas flow-limiting device 205,
But it's not limited to that for the technical solution of the utility model, in the other embodiments of the utility model, please refer to Fig. 9 A and
Multiple current limliting through-holes can be set on the baffle in Fig. 9 B, to realize the lower speed of exhaust, and then realize the higher precision of pressure
Control.These current limliting through-holes can be uniformly distributed, can also be with random distribution, the complete phase of the size and shape of these current limliting through-holes
Together, as institute's current limiting through-hole 2051 in Fig. 9 A be diameter be D1 circle, can also be not exactly the same, in Fig. 9 B, institute
Current limiting through-hole is circle, but the diameter of centrally located current limliting through-hole is D2, and the diameter positioned at the current limliting through-hole of periphery is
D1, and D1 is less than D2.
In above-described embodiment, the quantity of by-pass line is only 1, but the technical solution of the utility model does not limit
In this, the quantity of by-pass line can be greater than or equal to 2, it is possible thereby to realize that the Pressure behaviour of higher precision is stablized.At this
In the other embodiments of utility model, referring to FIG. 10, being arranged in parallel 2 by-pass lines on pump-line 202: the first bypass
Pipeline 204a and the second by-pass line 204b, is built-in with first gas current limiter 205a in the first by-pass line 2041, by the of second
It threads a pipe and is built-in with second gas current limiter 205b in 204b.
In addition, the technical solution of the utility model is not only applicable to the furnace tube device of above-described embodiment, can also be applicable in
The semiconductor manufacturing equipment of pumping and air inlet is carried out to cavity in any need, therefore in the other embodiments of the utility model
In, the semiconductor manufacturing equipment can plant for chemical vapor depsotition equipment, Pvd equipment, etching apparatus or ion
Enter equipment etc..
In conclusion the semiconductor manufacturing equipment of the utility model, one section of by-pass line in parallel on pump-line, and
One Gas flow-limiting device is installed in the by-pass line, pumping efficiency is stablized by Gas flow-limiting device, not so as to improve dynamic pressure
Stable problem reduces and reduces the intracorporal dynamic pressure variation of chamber, board maintenance period can be effectively reduced as a result, promotion is set
The standby host platform rate of capacity utilization, while the problem of leading to particle contamination because of cavity pressure dynamic change is reduced, it is good to avoid product
Rate decline.And Gas flow-limiting device is arranged in by-pass line, and is the baffle at least one current limliting through-hole, it is at low cost, and
Adjusting at various pressures may be implemented, control precision is high, pressure is stablized.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Fixed, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content belong to right and want
Seek the protection scope of book.
Claims (10)
1. a kind of semiconductor manufacturing equipment characterized by comprising
Process cavity has air inlet and air outlet；
Pump-line, the pump-line connect the gas outlet；And
At least one by-pass line is arranged in parallel with one section of the pump-line, and gas limit is built-in in the by-pass line
Device is flowed, the Gas flow-limiting device includes the baffle at least one current limliting through-hole, the outer of the baffle and the bypass pipe
Road is tightly connected.
2. semiconductor manufacturing equipment as described in claim 1, which is characterized in that the current limliting through-hole has fixed bore, institute
Stating fixed bore is 3mm~8mm.
3. semiconductor manufacturing equipment as described in claim 1, which is characterized in that when the current limliting through-hole on the baffle is
When multiple, all current limliting through-holes are uniformly distributed.
4. semiconductor manufacturing equipment as described in claim 1, which is characterized in that the speed of exhaust in the by-pass line is every
Second 3slm~10slm.
5. semiconductor manufacturing equipment as described in claim 1, which is characterized in that the bore of the by-pass line is less than the pumping
The bore of feed channel.
6. semiconductor manufacturing equipment as described in claim 1, which is characterized in that the pump-line and/or the process cavity
It is equipped with pressure gauge.
7. semiconductor manufacturing equipment as described in claim 1, which is characterized in that the pump-line and the by-pass line are simultaneously
One section of connection setting is equipped with Pneumatic valve.
8. the semiconductor manufacturing equipment as described in any one of claims 1 to 7, which is characterized in that it further include vacuum pump, it is described
Vacuum pump connects the pump-line.
9. semiconductor manufacturing equipment as claimed in claim 8, which is characterized in that the semiconductor manufacturing equipment is chemical gaseous phase
Depositing device, Pvd equipment, etching apparatus, furnace tube device or ion implantation equipment.
10. semiconductor manufacturing equipment as claimed in claim 9, which is characterized in that when the semiconductor manufacturing equipment is boiler tube
When equipment, the furnace tube device includes pedestal, cassette and open at one end, the closed boiler tube of the other end, the pedestal with it is described
The opening end in contact of boiler tube simultaneously constitutes confined space with the boiler tube, using as the process cavity；The cassette is installed in described
On pedestal and it is contained in inside the boiler tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821764898.XU CN209039582U (en) | 2018-10-29 | 2018-10-29 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821764898.XU CN209039582U (en) | 2018-10-29 | 2018-10-29 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209039582U true CN209039582U (en) | 2019-06-28 |
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ID=67040282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821764898.XU Active CN209039582U (en) | 2018-10-29 | 2018-10-29 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209039582U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2618801A (en) * | 2022-05-17 | 2023-11-22 | Edwards Ltd | Fluid routing for a vacuum pumping system |
-
2018
- 2018-10-29 CN CN201821764898.XU patent/CN209039582U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2618801A (en) * | 2022-05-17 | 2023-11-22 | Edwards Ltd | Fluid routing for a vacuum pumping system |
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