CN104112636A - Vacuum device and valve control method - Google Patents
Vacuum device and valve control method Download PDFInfo
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- CN104112636A CN104112636A CN201410150372.2A CN201410150372A CN104112636A CN 104112636 A CN104112636 A CN 104112636A CN 201410150372 A CN201410150372 A CN 201410150372A CN 104112636 A CN104112636 A CN 104112636A
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Abstract
The invention provides a vacuum device which allows the treatment using large-flow treatment gas and a valve control method. In a plasma processing device, APC valves in four first exhaust pipes in exhaust pipes connected with a processing container are set to be with the opening degree of 300 (300) and APC valves in the remaining four second exhaust pipes are set to be with the opening degree of 1000 (100%). Thus, as shown by the curve (C), the pressure control in the processing container and the flow control of the treatment gas can be performed between the curve (A) obtained when the opening degree of the APC valves is set to be 300 and the curve (B) obtained when the opening degree of the APC valves is set to be 1000. Compared with the curve (A), the curve (C) allows discharge of larger flow of treatment gas (Q1<Q2) under the same pressure (P1). Besides, compared with the curve (A), the curve (C) allows the treatment of lower pressure (P1<P2) on the condition of the same flow (such as Q1).
Description
Technical field
The present invention relates to vacuum plant and valve control method for handled object being carried out to plasma treatment etc.
Background technology
At FPD(flat-panel monitor) manufacturing process in, FPD is carried out to the various plasma treatment such as plasma etching, plasma ashing, plasma deposition with substrate.As the device that carries out such plasma treatment, the plasma processing apparatus of such as known parallel plate-type, inductively coupled plasma (ICP:Inductively Coupled Plasma) processing unit etc.These plasma processing apparatus are configured to the vacuum plant that makes to be decompressed to vacuum state in container handling and process.
In recent years, also maximize for the container handling that large-scale FPD is processed with substrate.Therefore, be generally equipped with multiple for to the vacuum pump that carries out decompression exhaust in container handling.At the discharge directions upstream side of these vacuum pumps, automatic pressure control (Adaptive Pressure Control) valve (hereinafter referred to as " APC valve ") is set, automatically the conductance (conductance) that regulates exhaust channel, regulates the pressure in container handling thus.For example, in plasma-etching apparatus, adopt in the time processing, by mass flow controller, the processing gas of certain flow is supplied in container handling, the while is by the conductance of APC valve regulation exhaust channel, to control the method for the processing pressure as expecting.
As the pressure controlled prior art about vacuum plant, in patent documentation 1, a kind of vacuum plant is proposed, it comprises: the vacuum exhaust unit being connected with multiple exhaust channels; Be arranged at the gate valve of the exhaust channel of the part in multiple exhaust channels; With be provided with the exhaust channel of gate valve beyond the APC valve of the corresponding setting of exhaust channel.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2009-16382 communique (Fig. 2 etc.)
Summary of the invention
The technical problem solving is wanted in invention
, in the exhaust channel of multiple systems, be equipped with respectively APC valve all the time, be configured to using one of them as main valve, using other as servo valve.Each servo valve and main valve move in linkage., adopt all APC valves to carry out synchronously with one another the structure of on-off action.
But as the characteristic of APC valve, in the time that the aperture of valve exceedes to a certain degree, the variation quantitative change of the conductance of every 1% aperture is large, the controlled reduction of pressure.Thus, conventionally the upper limit of the aperture of APC valve being set as to 30% left and right uses.As a result, the actual effect exhaust velocity of vacuum pump is restricted by the aperture of APC valve, even if use the large vacuum pump of exhaust capacity, can not give full play to its performance.Therefore, for the exhaust velocity that obtains needing, have to use the vacuum pump that exhaust capacity is larger, become a reason that increases installation cost.For example, the known plasma etch process that needs the etching gas of large flow in order to improve etch-rate.In such plasma etch process, in the exhaust of multiple systems of combination that utilizes existing APC valve and vacuum pump, APC valve is synchronously set as identical aperture, due to the restriction of above-mentioned aperture, can not fully improve the conductance of gas extraction system.Therefore under high vacuum condition, use to large flow, large air displacement the processing of processing gas to become difficulty, or, vacuum pump size need to be replaced with to the vacuum pump that exhaust capacity is higher.
Thus, the object of the present invention is to provide a kind of vacuum plant that can tackle large flow and use the processing of processing gas.
For the technical scheme of technical solution problem
Vacuum plant of the present invention comprises: storage handled object and inside can be remained to the container handling of vacuum; In above-mentioned container handling, supply with the gas supply source of processing gas via gas supply passageway; Be arranged at above-mentioned gas supply passageway, regulate the flow regulator of the supply flow rate of above-mentioned processing gas; With the pressure-detecting device that detects the pressure in above-mentioned container handling.In addition, vacuum plant of the present invention comprises: be connected with above-mentioned container handling, be provided with multiple first exhaust channels of the first valve; Be connected with above-mentioned container handling, be provided with multiple second exhaust channels of second valve; The exhaust apparatus being connected with above-mentioned the first exhaust channel or the second exhaust channel; And control part, its detected pressures value and setup pressure value based on being detected by above-mentioned pressure-detecting device, controls respectively above-mentioned the first valve and above-mentioned second valve, makes the pressure in above-mentioned container handling become setting.Further, in vacuum plant of the present invention, above-mentioned the first valve is the valve that regulates changeably the conductance of above-mentioned the first exhaust channel, and above-mentioned second valve is the valve that carries out the switching of the switching of above-mentioned the second exhaust channel.And in vacuum plant of the present invention, above-mentioned control part comprises: the regulation portion that regulates the aperture that is arranged at respectively above-mentioned the first valve in multiple above-mentioned the first exhaust channels blanketly; With blanket the switching switching part that is arranged at respectively the switching of the switching of the above-mentioned second valve in multiple above-mentioned the second exhaust channels.
In vacuum plant of the present invention, can be connected with an above-mentioned exhaust apparatus both of above-mentioned the first exhaust channel and above-mentioned the second exhaust channel.
In vacuum plant of the present invention, can be, extraction flow while being located in above-mentioned the first exhaust channel by above-mentioned the first valve regulation conductance is that V11, the aperture that makes above-mentioned the first valve in above-mentioned the first exhaust channel extraction flow while being standard-sized sheet is that extraction flow in V12, above-mentioned the second exhaust channel is while being V2, above-mentioned control part regulates the aperture of above-mentioned the first valve and the switching of above-mentioned second valve, and the relation of following formula (1) is set up:
n×V11≤m×V2≤n×V12……（1）
(herein, n represents the number of above-mentioned the first exhaust channel, and m represents the number of above-mentioned the second exhaust channel.）。
Vacuum plant of the present invention can be, uses the valve of the conductance that regulates changeably above-mentioned the second exhaust channel as above-mentioned second valve, only carries out on-off action.
Vacuum plant of the present invention can be that handled object is carried out to etched Etaching device.
In vacuum plant of the present invention, handled object can be FPD substrate.
The control method of valve of the present invention is the control method of the valve in vacuum plant.In the control method of valve of the present invention, above-mentioned vacuum plant comprises: storage handled object and inside can be remained to the container handling of vacuum; In above-mentioned container handling, supply with the gas supply source of processing gas via gas supply passageway; Be arranged at above-mentioned gas supply passageway, regulate the flow regulator of the supply flow rate of above-mentioned processing gas; With the pressure-detecting device that detects the pressure in above-mentioned container handling.In addition, in the control method of valve of the present invention, above-mentioned vacuum plant comprises: be connected with above-mentioned container handling, be provided with multiple first exhaust channels of the first valve; Be connected with above-mentioned container handling, be provided with multiple second exhaust channels of second valve; With the exhaust apparatus being connected with above-mentioned the first exhaust channel or the second exhaust channel.Further, in the control method of valve of the present invention, above-mentioned vacuum plant comprises control part, detected pressures value and the setup pressure value of this control part based on being detected by above-mentioned pressure-detecting device, control respectively above-mentioned the first valve and above-mentioned second valve, make the pressure in above-mentioned container handling become setting.In addition, in the control method of valve of the present invention, above-mentioned the first valve is the valve that regulates changeably the conductance of above-mentioned the first exhaust channel, above-mentioned second valve is the valve that carries out the switching of the switching of above-mentioned the second exhaust channel, and above-mentioned control part comprises: the regulation portion that regulates the aperture that is arranged at respectively above-mentioned the first valve in multiple above-mentioned the first exhaust channels blanketly; With blanket the switching switching part that is arranged at respectively the switching of the switching of the above-mentioned second valve in multiple above-mentioned the second exhaust channels.And the control method of valve of the present invention comprises: the synchronously step of standard-sized sheet of aperture that makes whole above-mentioned second valves; With detected pressures value and the setup pressure value based on being detected by above-mentioned pressure-detecting device, the step of the aperture of whole above-mentioned the first valve of adjusted in concert.
The control method of valve of the present invention can be, extraction flow while being located in above-mentioned the first exhaust channel by above-mentioned the first valve regulation conductance is that V11, the aperture that makes above-mentioned the first valve in above-mentioned the first exhaust channel extraction flow while being standard-sized sheet is that extraction flow in V12, above-mentioned the second exhaust channel is while being V2, regulate the aperture of above-mentioned the first valve and the switching of above-mentioned second valve, the relation of following formula (1) set up:
n×V11≤m×V2≤n×V12……（1）
(herein, n represents the number of above-mentioned the first exhaust channel, and m represents the number of above-mentioned the second exhaust channel.）。
Invention effect
According to the present invention, in large-scale vacuum plant, can in restraining device cost, use the processing of the processing gas of large flow.
Brief description of the drawings
Fig. 1 is the sectional view that schematically shows the structure of the plasma-etching apparatus of the first execution mode of the present invention.
Fig. 2 is the plane graph of the diapire of the plasma-etching apparatus of Fig. 1.
Fig. 3 is the piece figure of the hardware configuration of the control part of the plasma-etching apparatus of presentation graphs 1.
Fig. 4 is the piece figure of the hardware configuration of the module controller of presentation graphs 3.
Fig. 5 is the FBD (function block diagram) of the functional structure of the module controller of presentation graphs 3.
Fig. 6 is the performance plot that represents the relation of processing gas flow that effect of the present invention is described and pressure.
Fig. 7 is the schematic diagram of the structure of the plasma-etching apparatus of reduced representation the second execution mode of the present invention.
Fig. 8 is the plane graph of the diapire of the plasma-etching apparatus of Fig. 7.
Description of reference numerals
1 ... container handling; 1a ... diapire; 1b ... sidewall; 1c ... lid; 11 ... pedestal; 12 ... base material; 13,14 ... seal member; 15 ... insulating element; 31 ... spray head; 33 ... gas diffusion space; 35 ... gas squit hole; 37 ... gas introduction port; 39 ... process gas supply pipe; 41 ... valve; 43 ... mass flow controller; 45 ... gas supply source; 51 ... exhaust opening; 53 ... blast pipe; 53a ... flange part; 53A ... downtake pipe; 53B ... second exhaust pipe; 55,55A, 55B ... APC valve; 57 ... exhaust apparatus; 61 ... pressure gauge; 71 ... supply lines; 73 ... matching box (M.B.); 75 ... high frequency electric source; 100,100A ... plasma-etching apparatus.
Embodiment
Below, the execution mode that present invention will be described in detail with reference to the accompanying.
(the first execution mode)
Fig. 1 is the sectional view representing as the Sketch of the plasma-etching apparatus of the first execution mode of processing unit of the present invention.As shown in Figure 1, plasma-etching apparatus 100 is configured to glass substrate (being designated hereinafter simply as " substrate ") S to using as for example FPD of handled object and carries out the parallel flat plasma-etching apparatus of etched capacitive coupling type.In addition, as FPD, illustrate and have liquid crystal display (LCD), electroluminescent (Electro Luminescence:EL) display, plasma display (PDP) etc.
Inside having, this plasma-etching apparatus 100 is implemented the container handling that is configured as angle barrel shape 1 being formed by aluminium of anodized (alumite processing).The main body (container body) of container handling 1 only illustrates two by diapire 1a, four sidewall 1b() form.In addition, there is lid 1c in the upper bond of the main body of container handling 1.Although omitted diagram, the gate valve that is provided with substrate transferring opening and this opening is sealed at sidewall 1b.
Lid 1c is configured to by not shown switching mechanism and can opens and closes with respect to sidewall 1b.Closing under the state of lid 1c, the bonding part of lid 1c and each sidewall 1b, by 3 sealings of O shape ring, keeps the air-tightness in container handling 1.
Bottom in container handling 1 disposes the insulating element 10 of shaped as frame shape.On insulating element 10, be provided with as the pedestal 11 of mounting table that can load substrate S.Also there is base material 12 as the pedestal 11 of lower electrode.Base material 12 is for example formed by conductive materials such as aluminium, stainless steels (SUS).Base material 12 is configured on insulating element 10, disposes the seal members 13 such as O shape ring in the bonding part of two parts, maintains air-tightness.Between the diapire 1a of insulating element 10 and container handling 1, also maintain air-tightness by seal members 14 such as O shape rings.The sidepiece periphery of base material 12 is surrounded by insulating element 15.Thus, the insulating properties of the side of pedestal 11 is guaranteed, the paradoxical discharge while preventing plasma treatment.
Above pedestal 11, parallel with this pedestal 11 and be relatively provided with the spray head 31 working as upper electrode.Spray head 31 is supported on the lid 1c on the top of container handling 1.Spray head 31 is hollow form, is provided with gas diffusion space 33 therein.In addition be formed with, multiple gas squit holes 35 of ejection processing gas at the lower surface (with the opposite face of pedestal 11) of spray head 31.These spray head 31 ground connection, together form pair of parallel plate electrode with pedestal 11.
Near the center upper portion of spray head 31, be provided with gas introduction port 37.This gas introduction port 37 is connected with processing gas supply pipe 39.This processing gas supply pipe 39 is connected with the gas supply source 45 of supplying with for carrying out etched processing gas with mass flow controller (MFC) 43 via two valves 41,41.As processing gas, for example, except halogen gas, O2 gas, can also use the rare gas such as Ar gas.
Diapire 1a in above-mentioned container handling 1 is formed with the opening 51 for exhaust that connects multiple positions (for example 8 places).Each exhaust is connected with blast pipe 53 respectively with opening 51.Each blast pipe 53 has flange part 53a in its end, fixes with the state that has O shape ring (omitting diagram) between this flange part 53a and diapire 1a.Each blast pipe 53 is connected with APC valve 55 and exhaust apparatus 57.
With reference to Fig. 2, exhaust channel in plasma-etching apparatus 100 and the configuration example of APC valve 55A, 55B are described herein.Fig. 2 is the plane graph of the diapire 1a in the plasma-etching apparatus 100 of Fig. 1.For convenience of description, in Fig. 2, be illustrated in 8 exhaust openings 51 and configure the situation of 4 downtake pipe 53A and 4 second exhaust pipe 53B.Blast pipe 53 comprises for example, as multiple (4) downtake pipe 53A of the first exhaust channel with for example, as multiple (4) second exhaust pipe 53B of the second exhaust channel.Be provided with the APC valve 55A as the first valve at downtake pipe 53A.Be provided with the APC valve 55B as second valve at second exhaust pipe 53B.APC valve 55A, based on make aperture change from the control signal of control part 80, regulates the conductance of downtake pipe 53A automatically.APC valve 55B is set as only carrying out the switching action of these two options of standard-sized sheet or full cut-off, carries out opening or closing of second exhaust pipe 53B based on the control signal from control part 80.
As shown in Figure 2, two downtake pipe 53A, 53A disposed adjacent respectively dispose symmetrically two taking diapire 1a center as benchmark near two relative minor faces.Thus, APC valve 55A is also same configuration.In addition, two second exhaust pipe 53B, 53B disposed adjacent respectively dispose symmetrically two taking diapire 1a center as benchmark near two relative long limits.Thus, APC valve 55B is also same configuration.Downtake pipe 53A is connected with exhaust apparatus 57 respectively with second exhaust pipe 53B.Exhaust apparatus 57 for example has turbomolecular pump equal vacuum pump, can will in container handling 1, be evacuated to the reduced atmosphere of regulation thus.
The pressure gauge 61 of the pressure in plasma-etching apparatus 100 is provided with instrumentation container handling 1.Pressure gauge 61 is connected with control part 80, and the instrumentation result of the pressure in container handling 1 is offered to control part 80 in real time.
The base material 12 of pedestal 11 is connected with supply lines 71.This supply lines 71 is connected with high frequency electric source 75 via matching box (M.B.) 73.Thus, supply with the High frequency power of for example 13.56MHz from high frequency electric source 75 to the pedestal 11 as lower electrode.In addition, supply lines 71 is imported in container handling 1 via the opening 77 of the power supply as pass through openings portion that is formed on diapire 1a.
Each component part of plasma-etching apparatus 100 is connected with control part 80 and is controlled.With reference to Fig. 3, the control part 80 of the base plate processing system of the plasma-etching apparatus 100 that comprises present embodiment in its part is described.Fig. 3 is the block diagram that represents the hardware configuration of control part 80.As shown in Figure 3, control part 80 comprises Setup Controller (Equipment Controller: be also designated as below " EC ") 81; The module controller (Module Controller: be also designated as below " MC ") 83 of multiple (only illustrate two in Fig. 2, but be not limited thereto); With the switch hub (HUB) 85 that is connected EC81 and MC83.
EC81 is the master control part (master controller) of the molar behavior of blanket multiple MC83, control base plate processing system.Multiple MC83 are respectively under the control of EC81, control the sub-control portion (slavecontroller) of the action of each module taking plasma-etching apparatus 100 as representative.Switch hub 85 is according to switching from the control signal of EC81 the MC83 being connected with EC81.
The control program of EC81 based on for realizing the various processing to substrate S of being carried out by base plate processing system and record the scheme for the treatment of conditions data etc., transmits control signal to each MC83, controls thus the action of substrate board treatment entirety.
Control part 80 also has subnetwork 87, DIST(Distribution: distribute) dish 88 and input and output (being designated as below I/O) module 89.Each MC83 is connected with I/O module 89 with DIST dish 88 via subnetwork 87.
I/O module 89 has multiple I/O portion 90.I/O portion 90 is connected with each terminal part of the each module taking plasma-etching apparatus 100 as representative.Although diagram, is not provided with the I/O mouth for the input and output of control figure signal, analog signal and serial signal in I/O portion 90.Control signal for each terminal part is exported from I/O portion 90 respectively.In addition, input respectively I/O portion 90 from the output signal of each terminal part.In plasma-etching apparatus 100, as the terminal part being connected with I/O portion 90, for example, can there are mass flow controller (MFC) 43, APC valve 55A, 55B, pressure gauge 61, exhaust apparatus 57 etc.
EC81 is via LAN(Local Area Network: local area network (LAN)) 91 with the MES(Manufacturing Execution System of manufacturing process of factory's entirety that is provided with base plate processing system 100 as management: manufacturing execution system) computer 93 be connected.Computer 93 is cooperated (acting in conjunction) with the control part 80 of base plate processing system 100, and the real time information of the operation about in factory is fed back to basic business system, and considers that the load etc. of factory's entirety carries out the judgement about operation.Computer 93 for example also can be connected with other computer 95 messaging devices such as grade.
Then,, with reference to Fig. 4, an example of the hardware configuration of MC83 is described.MC83 comprises the output devices 103 such as the input units such as master control part 101, keyboard, mouse 102, printer, display unit 104, storage device 105, external interface 106 and by they buses 107 connected to one another.Master control part 101 has CPU(central processing unit) 111, RAM(random asccess memory) 112 and ROM(read-only memory) 113.As long as storage device 105 can be stored information, no matter it is the storage device of which kind of mode, for example, be hard disk unit or optical disc apparatus.In addition, the recording medium 115 storage information that storage device 105 can read computer, from recording medium 115 reading informations.As long as recording medium 115 can be stored information, no matter it is the storage medium of which kind of mode, for example, be hard disk, CD, flash memory etc.Recording medium 115 can be the recording medium of the scheme of the plasma-etching method in minute book execution mode.
In MC83, CPU111 as operating area, carries out the program of storage in ROM113 or storage device 105 by RAM112, can in the plasma-etching apparatus of present embodiment 100, carry out thus the plasma etch process to substrate S.In addition, the hardware configuration of the EC81 in Fig. 3, computer 93,95 is for example also the structure shown in Fig. 4.
The functional structure of MC83 then, is described with reference to Fig. 5.Fig. 5 is the functional block diagram that represents the functional structure of MC83.In addition, in the following description, the hardware configuration that makes MC83 is the structure shown in Fig. 4, also with reference to the Reference numeral in Fig. 4.As shown in Figure 5, MC83 has regulation portion 121 and opens and closes switching part 123.CPU111 as operating area, carries out the program of storage in ROM113 or storage device 105 by RAM112, realizes thus the function of above-mentioned each portion.
The detected pressures value of regulation portion 121 based on being detected by pressure gauge 61 and the setup pressure value being specified by the scheme, the parameter etc. that are kept in advance in storage device 105, transmit control signal to each APC valve 55A, regulate the aperture of each APC valve 55A thus blanketly, make to become in the container handling 1 of plasma-etching apparatus 100 pressure of expectation.The aperture of APC valve 55A is for example divided into for 1000 stages of 0～1000, and the value of regulation aperture is sent to each APC valve 55A as numeral output (DO) information from the regulation portion 121 of MC83.
Open and close scheme, the parameter etc. of switching part 123 based on being kept in advance in storage device 105 and transmit control signal to each APC valve 55B, thus with the timing of regulation blanket carry out the switching of the switching of each APC valve 55B.The switching command of the switching of APC valve 55B is sent to each APC valve 55B as numeral output (DO) information from the switching switching part 123 of MC83.
Then, the processing action in the plasma-etching apparatus 100 forming is as mentioned above described.First, be, under the state of opening, in container handling 1, to be moved into by the fork of not shown carrying device with opening via substrate transferring as the substrate S of handled object at not shown gate valve, be placed on pedestal 11.Afterwards, gate valve is closed, and will in container handling 1, be evacuated to the vacuum degree of regulation by exhaust apparatus 57.Now, first, control signal is sent to each APC valve 55B from the switching switching part 123 of MC83, and whole APC valve 55B are standard-sized sheet.In addition, the regulation portion 121 of MC83 monitors the detected pressures value of pressure gauge 61, and control signal is sent to each APC valve 55A, regulates the aperture of each APC valve 55A thus blanketly, makes to become in container handling 1 pressure of expectation.
Then, relief valve 41, imports to the gas diffusion space 33 of spray head 31 via processing gas supply pipe 39, gas introduction port 37 from gas supply source 45 processing gas.Now, utilize mass flow controller 43 to process the flow control of gas.The processing gas that has imported gas diffusion space 33 further sprays the substrate S being positioned on pedestal 11 equably via multiple squit holes 35, and the pressure in container handling 1 is maintained at the value of regulation.
Under this state, via matching box 73, pedestal 11 is applied to High frequency power from high frequency electric source 75.Thus, between the pedestal 11 as lower electrode and the spray head 31 as upper electrode, produce high-frequency electric field, process gas by dissociation and plasma.Utilize this plasma to implement etch processes to substrate S.
In the plasma-etching apparatus 100 of present embodiment, MC83 is during above-mentioned plasma etch process, the regulation portion 121 of MC83 also monitors the detected pressures value of pressure gauge 61, transmit control signal to each APC valve 55A, regulate the aperture of each APC valve 55A thus blanketly, make the pressure for expecting in container handling 1.
In addition, the switching switching part 123 of MC83, during plasma etch process, remains standard-sized sheet by whole APC valve 55B.Multiple by making (for example 4) APC valve 55B is standard-sized sheet, can bring into play the exhaust capacity of the exhaust apparatus 57 being connected with second exhaust pipe 53B the largelyst, can use the etch processes of the processing gas of large flow.
Implementing after etch processes, stop from the applying of the High frequency power of high frequency electric source 75, stopping after gas imports, will being decompressed to the pressure of regulation in container handling 1.Then, open gate valve, fork substrate S being joined to not shown carrying device from pedestal 11, takes out of substrate S from the substrate transferring of container handling 1 with opening.By above operation, finish for the plasma etch process of a substrate S.
< effect >
The effect of the plasma processing apparatus 100 of present embodiment then, is described with reference to Fig. 6.Fig. 6 is that the experimental data based on actual is made, and is to represent to use in the container handling 1 of exhaust apparatus 57 plasma Etaching devices 100, to carry out decompression exhaust and import pressure while processing gas simultaneously and change (longitudinal axis) and the performance plot of relation of flow (transverse axis) of processing gas.Curve A represents the aperture of whole APC valve 55 of multiple (for example 8) blast pipe 53 being connected with container handling 1 to be set as 300(30%) situation.Curve B represents the aperture of whole APC valve 55 of multiple (for example 8) blast pipe 53 being connected with container handling 1 to be set as 1000(100%) situation.Can understand according to the comparison of curve A and curve B, even uniform pressure P1 makes the curve B of aperture standard-sized sheet of APC valve 55 compared with aperture being set as to 300 curve A, can be by the processing gas exhaust of larger flow (Q1 < Q3).In other words, the in the situation that of curve B, compared with curve A, even identical flow also can carry out the processing of lower pressure.
In the plasma processing apparatus 100 of present embodiment, in 8 blast pipes 53 that are connected with container handling 1, in 4 downtake pipe 53A, APC valve 55A is set as to aperture 300(30%), in 4 remaining second exhaust pipe 53B, APC valve 55B is set as to aperture 1000(100%).Thus, can be when the APC valve 55A that passes through 4 downtake pipe 53A regulate the pressure in container handling 1, the conductance of 4 second exhaust pipe 53B that are left is maximized.Thus, as shown in the curve C in Fig. 6, can be between the curve B that the aperture of APC valve is set as to the curve A of 300 o'clock and the aperture of APC valve is set as at 1000 o'clock, carry out pressure control and the flow control of processing gas in container handling 1.That is, curve C is compared with curve A, even identical pressure P 1 also can be carried out exhaust (Q1 < Q2) to the processing gas of larger flow.In addition,, the in the situation that of curve C, compared with curve A, for example, even when identical flow (Q1), also can carry out the processing (P1 < P2) of lower pressure.
As mentioned above, in the plasma processing apparatus 100 of present embodiment, the APC valve 55A that can be arranged at downtake pipe 53A in utilization carries out the pressure controlled while in container handling 1, utilizes the APC valve 55B reply of the full-gear that is arranged at second exhaust pipe 53B to process the large flow of gas.Be arranged at controlled good until use in the scope of aperture 30% that the APC valve 55A of downtake pipe 53A can be at conductance.On the other hand, in second exhaust pipe 53B, can utilize the APC valve 55B of aperture 100% that conductance is maximized, therefore the turbomolecular pump of the exhaust apparatus using in second exhaust pipe 53B 57 can be replaced with the low parts of exhaust capacity, realize low normalization, can reduce installation cost.
In addition, the ratio that number is set of APC valve 55B that is arranged at the APC valve 55A of downtake pipe 53A and is arranged at the full-gear of second exhaust pipe 53B is not limited to 1:1, can suitably set.That is, can make to regulate the APC valve 55A of aperture and be set as full-gear APC valve 55B rate of change is set, can between the curve A of Fig. 6 and curve B, carry out accurately the pressure control in container handling 1 and process the flow control of gas.
In addition, the regulation portion 121 of MC83 and switching over portion 123, to be located at extraction flow while conductance being adjusted to setting by APC valve 55A in downtake pipe 53A be V11, extraction flow while making the aperture of APC valve 55A be standard-sized sheet in downtake pipe 53A is that extraction flow in V12, second exhaust pipe 53B is while being V2, preferably regulate the aperture of APC valve 55A and the switching of APC valve 55B, the relation of formula (1) set up:
n×V11≤m×V2≤n×V12……（1）
(herein, n represents the number of downtake pipe 53A, and m represents the number of second exhaust pipe 53B.）。Herein, the aperture as conductance is adjusted to setting by APC valve 55A in downtake pipe 53A time, for example, can be, in the scope of aperture 15%～30%, to be preferably in the scope of aperture 15～25%, more preferably aperture 20%.In the case of meeting the relation of formula (1), can be in the controlled fully large gross exhaust gas that obtains in controlling the pressure in container handling 1 well.Herein, the in the situation that of n × V11 > m × V2, the extraction flow of the total in m second exhaust pipe 53B is too small, can not make the air displacement of device entirety larger, is therefore difficult to tackle large flow processing.On the other hand, the in the situation that of m × V2 > n × V12, the extraction flow of the total in m second exhaust pipe 53B is excessive, the controlled decline of pressure in the container handling 1 that the APC valve 55A in n downtake pipe 53A brings.In addition,, by meeting above-mentioned formula (1), can distribute best the ratio that arranges of APC valve 55A and APC valve 55B.
In addition, in the plasma-etching apparatus 100 of present embodiment, for the 2nd APC valve 55B, adopt the structure of only utilizing the switching function of the switching of carrying out aperture 0 or 1000, but also can replace part or all of the 2nd APC valve 55B, use the open and close valves such as such as gate valve.
(the second execution mode)
The plasma-etching apparatus of the second execution mode of the present invention then, is described with reference to Fig. 7 and Fig. 8.In the following description, by with the difference of the first execution mode centered by describe, omit the repeat specification to the structure identical with the first execution mode.
Fig. 7 is the schematic diagram of the structure of the plasma-etching apparatus 100A of reduced representation present embodiment.The basic structure of plasma-etching apparatus 100A is same with the plasma-etching apparatus 100 of the first execution mode, therefore omits diagram and the explanation of detailed structure.
Fig. 8 is the plane graph of the diapire 1a in plasma-etching apparatus 100A.For convenience of description, in Fig. 8, represented to dispose at 8 exhaust openings 51 situation of 4 downtake pipe 53A and 4 second exhaust pipe 53B.Be provided with APC valve 55A at downtake pipe 53A, be provided with APC valve 55B at second exhaust pipe 53B.In the present embodiment, as shown in Figure 8, downtake pipe 53A and second exhaust pipe 53B disposed adjacent, taking diapire 1a center as benchmark, respectively dispose two symmetrically along relative two minor faces and long limit.APC valve 55A and APC valve 55B are also same configuration thus.
The plasma-etching apparatus 100A of present embodiment adopts the structure that connects an exhaust apparatus 57 in the downstream of the discharge directions of two APC valve 55A, 55B.That is, in plasma-etching apparatus 100A, in 8 blast pipes 53, make adjacent downtake pipe 53A and second exhaust pipe 53B collaborate and become interflow blast pipe 53AB, an exhaust apparatus 57 is connected with this interflow blast pipe 53AB.In such structure, also can be by the APC valve 55A that is arranged at downtake pipe 53A the controlled good of conductance until use in the scope of aperture 30%, carry out the pressure control in container handling 1 simultaneously.On the other hand, in second exhaust pipe 53B, can utilize the APC valve 55B of aperture 100% that conductance is maximized, therefore can not make the exhaust capacity of plasma-etching apparatus 100A entirety decline, can tackle large flow processing.And, in the present embodiment, adopt the downtake pipe 53A and the second exhaust pipe 53B interflow that make in the discharge directions downstream position adjacency of two APC valve 55A, 55B, the structure that an exhaust apparatus 57 is connected with interflow blast pipe 53AB.According to this structure, compared with the first execution mode, the magnitude setting of exhaust apparatus 57 of the turbomolecular pump etc. with high price can be reduced to half, therefore can significantly reduce installation cost.
Other structure of present embodiment is identical with the first execution mode with effect.
Above, understand in detail embodiments of the present invention to be illustrated as object, but the present invention is not subject to the restriction of above-mentioned execution mode, can carry out various distortion.For example, in the above-described embodiment, the plasma-etching apparatus that there are parallel plate-type is example, but the present invention also can be applied to such as inductively coupled plasma device, surface wave plasma device, ECR(Electron Cyclotron Resonance: electron cyclotron resonace) plasma-etching apparatus of the alternate manner such as plasma device, Helicon wave plasma device.In addition, as long as carrying out the pressure controlled vacuum plant in chamber, be not limited to device for dry etching, for example, also can be applied to comparably in film formation device or cineration device etc.
In addition, the present invention is not limited to using FPD substrate as handled object, is for example also applicable to the situation using semiconductor wafer, substrate used for solar batteries as handled object.
Claims (8)
1. a vacuum plant, is characterized in that, comprising:
Storage handled object and inside can be remained to the container handling of vacuum;
In described container handling, supply with the gas supply source of processing gas via gas supply passageway;
Be arranged at described gas supply passageway, regulate the flow regulator of the supply flow rate of described processing gas;
Detect the pressure-detecting device of the pressure in described container handling;
Be connected with described container handling, be provided with multiple first exhaust channels of the first valve;
Be connected with described container handling, be provided with multiple second exhaust channels of second valve;
The exhaust apparatus being connected with described the first exhaust channel or the second exhaust channel; With
Control part, its detected pressures value and setup pressure value based on being detected by described pressure-detecting device, controls respectively described the first valve and described second valve, makes the pressure in described container handling become setting, wherein,
Described the first valve is the valve that regulates changeably the conductance of described the first exhaust channel,
Described second valve is the valve that carries out the switching of the switching of described the second exhaust channel,
Described control part comprises: the regulation portion that regulates the aperture that is arranged at respectively described the first valve in multiple described the first exhaust channels blanketly; With
Be arranged at respectively the switching switching part of the switching of the switching of the described second valve in multiple described the second exhaust channels blanketly.
2. vacuum plant as claimed in claim 1, is characterized in that:
Be connected with a described exhaust apparatus both of described the first exhaust channel and described the second exhaust channel.
3. vacuum plant as claimed in claim 1 or 2, is characterized in that:
Extraction flow while being located in described the first exhaust channel by described the first valve regulation conductance is that V11, the aperture that makes described the first valve in described the first exhaust channel extraction flow while being standard-sized sheet is that extraction flow in V12, described the second exhaust channel is while being V2, described control part regulates the aperture of described the first valve and the switching of described second valve, and the relation of following formula (1) is set up:
n×V11≤m×V2≤n×V12……（1），
Herein, n represents the number of described the first exhaust channel, and m represents the number of described the second exhaust channel.
4. the vacuum plant as described in any one in claim 1～3, is characterized in that:
Use the valve of the conductance that regulates changeably described the second exhaust channel as described second valve, only carry out on-off action.
5. the vacuum plant as described in any one in claim 1～4, is characterized in that:
This vacuum plant is that handled object is carried out to etched Etaching device.
6. vacuum plant as claimed in claim 5, is characterized in that:
Handled object is FPD substrate.
7. a valve control method, it is the control method of the valve in vacuum plant, this valve control method is characterised in that:
Described vacuum plant comprises:
Storage handled object and inside can be remained to the container handling of vacuum;
In described container handling, supply with the gas supply source of processing gas via gas supply passageway;
Be arranged at described gas supply passageway, regulate the flow regulator of the supply flow rate of described processing gas;
Detect the pressure-detecting device of the pressure in described container handling;
Be connected with described container handling, be provided with multiple first exhaust channels of the first valve;
Be connected with described container handling, be provided with multiple second exhaust channels of second valve;
The exhaust apparatus being connected with described the first exhaust channel or the second exhaust channel; With
Control part, its detected pressures value and setup pressure value based on being detected by described pressure-detecting device, controls respectively described the first valve and described second valve, makes the pressure in described container handling become setting, wherein,
Described the first valve is the valve that regulates changeably the conductance of described the first exhaust channel,
Described second valve is the valve that carries out the switching of the switching of described the second exhaust channel,
Described control part comprises: the regulation portion that regulates the aperture that is arranged at respectively described the first valve in multiple described the first exhaust channels blanketly; With
Be arranged at respectively the switching switching part of the switching of the switching of the described second valve in multiple described the second exhaust channels blanketly,
The control method of this valve comprises:
Make the synchronously step of standard-sized sheet of aperture of whole described second valves; With
Detected pressures value and setup pressure value based on being detected by described pressure-detecting device, the step of the aperture of whole described the first valve of adjusted in concert.
8. valve control method as claimed in claim 7, is characterized in that:
Extraction flow while being located in described the first exhaust channel by described the first valve regulation conductance is that V11, the aperture that makes described the first valve in described the first exhaust channel extraction flow while being standard-sized sheet is that extraction flow in V12, described the second exhaust channel is while being V2, regulate the aperture of described the first valve and the switching of described second valve, the relation of following formula (1) set up:
n×V11≤m×V2≤n×V12……（1）
Herein, n represents the number of described the first exhaust channel, and m represents the number of described the second exhaust channel.
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| JP2013-084632 | 2013-04-15 | ||
| JP2013084632A JP6063803B2 (en) | 2013-04-15 | 2013-04-15 | Vacuum apparatus and valve control method |
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| CN104112636B CN104112636B (en) | 2017-04-12 |
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| JP (1) | JP6063803B2 (en) |
| KR (1) | KR101747490B1 (en) |
| CN (1) | CN104112636B (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546097A (en) * | 2016-06-27 | 2018-01-05 | 东京毅力科创株式会社 | Vacuum treatment installation and vacuum processing method and storage medium |
| CN110307388A (en) * | 2018-03-20 | 2019-10-08 | 株式会社岛津制作所 | Target aperture estimator and pressure adjust vacuum valve |
| CN111279107A (en) * | 2017-11-23 | 2020-06-12 | 应用材料公司 | Locking valve for vacuum sealing, vacuum chamber and vacuum processing system |
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| JP2018053272A (en) * | 2016-09-26 | 2018-04-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Film deposition apparatus |
| CN116670801A (en) * | 2021-01-25 | 2023-08-29 | 株式会社国际电气 | Substrate processing apparatus, method for manufacturing semiconductor device, pressure control apparatus, and substrate processing program |
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| JPH0745492A (en) * | 1993-07-27 | 1995-02-14 | Kokusai Electric Co Ltd | Pressure controller for vacuum chamber |
| JP4594800B2 (en) * | 2005-06-02 | 2010-12-08 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing program, and storage medium |
| JP5322254B2 (en) * | 2007-06-29 | 2013-10-23 | 東京エレクトロン株式会社 | Vacuum processing apparatus, vacuum processing method, and storage medium |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546097A (en) * | 2016-06-27 | 2018-01-05 | 东京毅力科创株式会社 | Vacuum treatment installation and vacuum processing method and storage medium |
| CN107546097B (en) * | 2016-06-27 | 2019-08-06 | 东京毅力科创株式会社 | Vacuum treatment installation and vacuum processing method and storage medium |
| CN111279107A (en) * | 2017-11-23 | 2020-06-12 | 应用材料公司 | Locking valve for vacuum sealing, vacuum chamber and vacuum processing system |
| CN110307388A (en) * | 2018-03-20 | 2019-10-08 | 株式会社岛津制作所 | Target aperture estimator and pressure adjust vacuum valve |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI619166B (en) | 2018-03-21 |
| KR101747490B1 (en) | 2017-06-14 |
| KR20140123905A (en) | 2014-10-23 |
| JP6063803B2 (en) | 2017-01-18 |
| TW201511125A (en) | 2015-03-16 |
| JP2014207353A (en) | 2014-10-30 |
| CN104112636B (en) | 2017-04-12 |
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