CN114622187A - Heating device of MOCVD equipment - Google Patents

Heating device of MOCVD equipment Download PDF

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Publication number
CN114622187A
CN114622187A CN202210288980.4A CN202210288980A CN114622187A CN 114622187 A CN114622187 A CN 114622187A CN 202210288980 A CN202210288980 A CN 202210288980A CN 114622187 A CN114622187 A CN 114622187A
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China
Prior art keywords
heating
base
reaction chamber
substrate tray
heating device
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CN202210288980.4A
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Chinese (zh)
Inventor
倪明堂
赵健州
何立波
吴俊美
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Guangdong Intelligent Robotics Institute
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Guangdong Intelligent Robotics Institute
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Priority to CN202210288980.4A priority Critical patent/CN114622187A/en
Publication of CN114622187A publication Critical patent/CN114622187A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a heating device of MOCVD equipment, which comprises a reaction chamber, a spraying system and a base, wherein the base is arranged at the bottom of the inner wall of the reaction chamber, and the spraying system is communicated with the reaction chamber; the base is including substrate tray, heating element, fixed subassembly and rotating assembly, and the substrate tray sets up in heating element's upside, and fixed subassembly sets up in heating element's downside, is provided with the standing groove that can supply the substrate to place on the substrate tray, and rotating assembly drive substrate tray, heating element and fixed subassembly are rotatory. Above-mentioned heating device of MOCVD equipment can lead to the voltage, the electric current of heating member through silicon controlled rectifier regulator control, and then the power of controlled value heating member to realize accurate accuse temperature, make reaction temperature accurate control in certain extent, guarantee reaction efficiency, can fix the substrate through fixed subassembly moreover, prevent that it from breaking away from the substrate tray at the in-process of reaction, fixed subassembly can be with ZnO film jack-up after the reaction is accomplished, take out with the manipulator.

Description

Heating device of MOCVD equipment
Technical Field
The invention relates to the technical field of metal organic compound vapor deposition equipment, in particular to a heating device of MOCVD equipment.
Background
The zinc oxide (ZnO) material is another important wide-band-gap semiconductor material which is researched in the world after gallium nitride (GaN), the band gap and the lattice constant of the zinc oxide (ZnO) material are very close to those of the GaN, the crystal form of the zinc oxide (ZnO) material is the same, and the zinc oxide (ZnO) material has similar photoelectric characteristics. ZnO has higher melting point and exciton confinement energy, exciton gain is higher, epitaxial growth temperature is low, cost is low, etching is easy, subsequent processing technology is more convenient, and the like, and the ZnO has a plurality of characteristics superior to GaN and shows greater development potential than GaN.
There are various methods for growing the ZnO thin film material, such as evaporation, magnetron sputtering, ion beam sputtering, Pulsed Laser Deposition (PLD), Metal Organic Compound Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and the like. Sputtering is the most common method, but only can grow polycrystalline thin films with poor quality, and cannot meet the preparation requirements of many devices. The MOCVD method can grow ZnO films with large area, uniformity and higher quality, and is suitable for industrial production. Therefore, the preparation of MOCVD equipment suitable for growing ZnO thin film materials and the search of new process methods are the problems to be solved urgently in the scientific and technological field and the industrial field at present. In the existing MOCVD equipment, the heating device is not uniformly heated, and the temperature control is not accurate, so that the quality of ZnO films produced in the same batch is different.
Disclosure of Invention
The invention mainly aims to provide a heating device of MOCVD equipment, which aims to solve the technical problems, can accurately control the temperature and ensure the consistent quality of a ZnO film.
In order to achieve the purpose, the invention adopts the following technical scheme:
a heating device of MOCVD equipment comprises a reaction chamber, a spraying system and a base, wherein the base is arranged at the bottom of the inner wall of the reaction chamber, and the spraying system is communicated with the reaction chamber;
the base is including substrate tray, heating element, fixed subassembly and rotating assembly, the substrate tray set up in heating element's upside, fixed subassembly set up in heating element's downside, be provided with the standing groove that can supply the substrate to place on the substrate tray, the rotating assembly drive the substrate tray heating element with fixed subassembly is rotatory.
As a preferred technical scheme, the heating assembly comprises a heating body, a heating base, a power supply, a silicon controlled regulator and a thermocouple temperature control meter, the heating body is uniformly arranged on the heating base, the thermocouple temperature control meter is arranged on one side of the heating body, the heating body is close to the substrate tray, and the power supply is connected with the heating body through the silicon controlled regulator.
As a preferred technical scheme, the rotating assembly comprises a connecting rod, a rotating motor, a driven gear and a magnetic fluid bearing, the magnetic fluid bearing is arranged at the bottom of the reaction chamber, the connecting rod penetrates through the magnetic fluid bearing and is fixedly arranged with the substrate tray, the heating assembly and the fixing assembly, the driven gear is arranged at one end of the connecting rod, and the rotating motor is connected with the driven gear.
As a preferred technical scheme, the fixing assembly includes a fixing base, a plurality of adsorption support rods, a support cylinder and a connection air pipe, the adsorption support rods are fixed on the fixing base, the adsorption support rods pass through the heating assembly and are arranged at the lower end of the placement groove, the support cylinder drives the fixing base to ascend and descend along the connection rod, the adsorption support rods are communicated with the connection air pipe through the fixing base, and the connection air pipe is arranged in the connection rod and freely rotates.
As an optimal technical scheme, the spraying system comprises an oxygen source spray gun, a zinc source spray gun, two oxygen source spray guns and two zinc source spray guns, the oxygen source spray gun and the zinc source spray gun are respectively connected with one diffusion cavity through the air supply pipe.
As a preferred technical scheme, the diffusion cavity is a disc-shaped diffusion cavity, and the gas conveying pipe is a corrugated pipe.
As a preferred technical scheme, the bottom of the reaction chamber is a flange base plate, the connecting rod penetrates through the flange base plate, and an air suction hole is formed in the flange base plate.
As a preferred technical scheme, the reaction chamber is further provided with a gas mixing chamber, an impurity source gas circuit, a radio frequency plasma generator and a stainless steel wire mesh, the stainless steel wire mesh is arranged between the gas mixing chamber and the reaction chamber, the impurity source gas circuit is communicated with the gas mixing chamber, and the radio frequency plasma generator is arranged in the gas mixing chamber.
The invention has the beneficial effects that: above-mentioned heating device of MOCVD equipment can lead to the voltage, the electric current of heating member through silicon controlled rectifier regulator control, and then the power of controlled value heating member to realize accurate accuse temperature, make reaction temperature accurate control in certain extent, guarantee reaction efficiency, can fix the substrate through fixed subassembly moreover, prevent that it from breaking away from the substrate tray at the in-process of reaction, fixed subassembly can be with ZnO film jack-up after the reaction is accomplished, take out with the manipulator.
Drawings
FIG. 1 is a schematic structural diagram of a heating device of an MOCVD apparatus according to the present invention;
fig. 2 is a schematic connection diagram of a heating body according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, a heating device of MOCVD equipment comprises a reaction chamber 1, a spraying system 3 and a base 2, wherein the base 2 is arranged at the bottom of the inner wall of the reaction chamber 1, the spraying system 3 is communicated with the reaction chamber 1, the base 2 is used for fixing a substrate, and the spraying system 3 is used for introducing an oxygen source and a zinc source to enable the substrate to generate a ZnO film in the reaction chamber 1.
The base 2 comprises a substrate tray 21, a heating assembly 22, a fixed assembly 23 and a rotating assembly 24, the substrate tray 21 is arranged on the upper side of the heating assembly 22, the fixed assembly 23 is arranged on the lower side of the heating assembly 22, a placing groove 211 for placing a substrate is formed in the substrate tray 21, the rotating assembly 24 drives the substrate tray 21, the heating assembly 22 and the fixed assembly 23 rotate, the substrate tray 21 is made of graphite materials, the heating assembly 22 is used for improving the reaction temperature and improving the reaction efficiency, the substrate can be fixed on the substrate tray 21 by the fixed assembly 23, the rotating assembly 24 can drive the substrate tray 21 to rotate, an oxygen source and a zinc source introduced into the spraying system 3 can be uniformly sprayed on the substrate, the ZnO film can uniformly grow on the substrate, and the quality of the ZnO film is guaranteed.
Referring to fig. 1 and 2, the heating assembly 22 includes a heating body 222, a heating base 221, a power supply 224, a thyristor regulator 223 and a thermocouple temperature control meter (not shown), the heating body 222 is uniformly disposed on the heating base 221, the thermocouple temperature control meter is disposed on one side of the heating body 222, the heating body 222 is close to the substrate tray 21, the heating body 222 is used for heating the substrate tray 21 for increasing the reaction environment temperature, the power supply 224 is connected to the heating body 222 through the thyristor regulator 223, the use efficiency of electric energy can be optimized through the thyristor regulator 223, the thermocouple temperature control meter 223 detects the temperature of the heating body 222 and feeds back the detection result to the thyristor regulator 223, the thyristor regulator 223 controls the voltage and current to the heating body 222, and further controls the power of the heating body 222 to realize precise temperature control, so that the reaction temperature is precisely controlled within a certain range, the reaction efficiency is ensured.
Referring to fig. 1, the rotating assembly 24 includes a connecting rod 241, a rotating motor 243, a driven gear 242 and a magnetic fluid bearing 244, the bottom of the reaction chamber 1 is a flange base 12, the magnetic fluid bearing 244 is disposed at the bottom of the flange base 12, the connecting rod 241 passes through the magnetic fluid bearing 244 and the flange base 12, the sealing performance of the reaction chamber 1 can be maintained, and at the same time, the connecting rod 241 can be ensured to rotate freely, the connecting rod 241 is fixedly disposed on the substrate tray 21, the heating assembly 22 and the fixing assembly 23, the driven gear 242 is disposed at one end of the connecting rod 241, the rotating motor 243 is connected with the driven gear 242, the rotating motor 243 drives the driven gear 242 to rotate, the connecting rod 241 rotates along with the driven gear 242 to drive the substrate tray 21, the heating assembly 22 and the fixing assembly 23 to rotate, the substrate is ensured to be in full contact with the oxygen source and the zinc source, the flange base 12 is provided with an air extraction hole 121, the air-pumping device is used for pumping out air in the reaction chamber 1 before reaction, so that impurities in the air are prevented from influencing the reaction.
Specifically, the fixing component 23 includes a fixing base 231, adsorption support rods 232, a support cylinder 234 and a connecting air pipe 233, the adsorption support rods 232 are fixed on the fixing base 231, the adsorption support rods 232 pass through the heating component 22 and are disposed at the lower end of the placing groove 211, the support cylinder 234 drives the fixing base 231 to lift along the connecting rod 241, the adsorption support rods 232 are communicated with the connecting air pipe 233 through the fixing base 231, the connecting air pipe 233 is disposed in the connecting rod 241 and rotates freely, an air pump is connected with the connecting air pipe 233 through a quick interface, so that when the substrate is placed in the placing groove 211, the adsorption support rods 232 are connected with the air pump through the connecting air pipe 233 to generate negative pressure to fix the substrate, prevent the substrate from being separated from the placing groove 211 under the driving of the rotating component 24, when the reaction is completed, the support cylinder 234 drives to push the fixing base to move, so as to push the adsorption support rods 232 to jack up the ZnO film that the reaction has been completed, for the robot to take out.
Concretely, spraying system 3 is including having oxygen source spray gun 31, zinc source spray gun 32, gas-supply pipe 33, diffusion chamber 34 and nozzle 35, a plurality of nozzles 35 equidistance set up on diffusion chamber 34, diffusion chamber 34 is equipped with two, oxygen source spray gun 31 and zinc source spray gun 32 are connected with a diffusion chamber 34 through gas-supply pipe 33 respectively, oxygen source gas and zinc source gas are respectively through oxygen source spray gun 31 and zinc source spray gun 32, get into diffusion chamber 34 through gas-supply pipe 33, rethread diffusion chamber 34 is respectively through the outside blowout of nozzle 35, diffusion chamber 34 is disc type diffusion chamber, gas-supply pipe 33 is the bellows, the bellows is anti bending capability strong, can increase spraying system 3's life.
Specifically, the reaction chamber 1 is further provided with a gas mixing chamber 11, an impurity source gas circuit 111, a radio frequency plasma generator 112 and a stainless steel wire mesh 113, wherein the stainless steel wire mesh 113 is arranged onAn impurity source gas path 111 is communicated with the gas mixing chamber 11 between the gas mixing chamber 11 and the reaction chamber 1, a radio frequency plasma generator 112 is arranged in the gas mixing chamber 11, and a doping source gas (N)2、NH3、N2O, etc.) is input by an impurity source gas circuit 111, ionized by a radio frequency plasma generator 112 and then enters the reaction chamber 1, the ionization rate of N is favorably improved by doping after ionization, and the gas is uniformly pressed down in the gas mixing chamber 11 through a high-density stainless steel wire mesh 113, so that the influence of the rising of the gas flow caused by the heating of the substrate on the growth quality of the film can be eliminated.
When the heating device of the MOCVD equipment is used, the cleaned substrate is placed on the placing groove 211 by the manipulator, the adsorption stay bar 232 is communicated with negative air pressure to fix the substrate, the reaction chamber 1 is communicated with negative air pressure, and the air pressure in the reaction chamber 1 is pumped to 10 through the air pumping hole 121-3Pa or so to improve the growth quality of the product and the uniformity of the film, the rotating component 25 drives the substrate tray 21 to rotate, so that the rotating speed is kept within 1000 r/min, and the source gas (N) is doped2、NH3、N2O, etc.) is input by an impurity source gas path 111, and the gas enters the reaction chamber 1 after being ionized by a radio frequency plasma generator 112, doping after ionization is favorable for improving the ionization rate of N, the gas is uniformly pressed down in a gas mixing chamber 11 through a high-density stainless steel wire mesh 113, so that the influence on the growth quality of the film caused by the rise of air flow caused by substrate heating can be eliminated, oxygen source gas and zinc source gas respectively pass through an oxygen source spray gun 31 and a zinc source spray gun 32, enter a diffusion chamber 34 through a gas conveying pipe 33, and are respectively sprayed out through a nozzle 35 through the diffusion chamber 34, when the reaction is completed, a supporting cylinder 234 is driven to push a fixed base 231 to move so as to push an adsorption supporting rod 232, and jack up a ZnO film which has completed the reaction, so that the ZnO film can be taken out by a manipulator.
The above-described embodiments are merely preferred examples of the present invention, and not intended to limit the scope of the invention, so that equivalent changes or modifications in the structure, features and principles of the invention described in the claims should be included in the claims.

Claims (8)

1. The heating device of the MOCVD equipment is characterized by comprising a reaction chamber, a spraying system and a base, wherein the base is arranged at the bottom of the inner wall of the reaction chamber, and the spraying system is communicated with the reaction chamber;
the base is including substrate tray, heating element, fixed subassembly and rotating assembly, the substrate tray set up in heating element's upside, fixed subassembly set up in heating element's downside, be provided with the standing groove that can supply the substrate to place on the substrate tray, the rotating assembly drive the substrate tray heating element with fixed subassembly is rotatory.
2. The heating device of the MOCVD equipment according to claim 1, wherein the heating assembly comprises a heating body, a heating base, a power supply, a silicon controlled rectifier (scr) and a thermocouple temperature control meter, the heating body is uniformly arranged on the heating base, the thermocouple temperature control meter is arranged on one side of the heating body, the heating body is close to the substrate tray, and the power supply is connected with the heating body through the scr.
3. The heating device of the MOCVD equipment according to claim 2, wherein the rotating assembly comprises a connecting rod, a rotating motor, a driven gear and a magnetic fluid bearing, the magnetic fluid bearing is arranged at the bottom of the reaction chamber, the connecting rod penetrates through the magnetic fluid bearing and is fixedly arranged with the substrate tray, the heating assembly and the fixing assembly, the driven gear is arranged at one end of the connecting rod, and the rotating motor is connected with the driven gear.
4. The heating device of the MOCVD equipment according to claim 3, wherein the fixing assembly comprises a fixing base, a plurality of adsorption support rods, a support cylinder and a connecting gas pipe, the adsorption support rods are fixed on the fixing base, the adsorption support rods penetrate through the heating assembly and are arranged at the lower end of the placing groove, the support cylinder drives the fixing base to ascend and descend along the connecting rod, the adsorption support rods are communicated with the connecting gas pipe through the fixing base, and the connecting gas pipe is arranged in the connecting rod and can rotate freely.
5. The heating device of the MOCVD equipment according to claim 3 or 4, wherein the spraying system comprises an oxygen source spray gun, a zinc source spray gun, gas conveying pipes, two diffusion cavities and nozzles, the nozzles are equidistantly arranged on the diffusion cavities, and the oxygen source spray gun and the zinc source spray gun are respectively connected with one diffusion cavity through the gas conveying pipes.
6. The heating device of the MOCVD equipment according to claim 5, wherein the diffusion chamber is a disk-shaped diffusion chamber, and the gas delivery pipe is a corrugated pipe.
7. The heating device of the MOCVD equipment according to claim 6, wherein a flange base plate is arranged at the bottom of the reaction chamber, the connecting rod penetrates through the flange base plate, and a suction hole is formed in the flange base plate.
8. The heating device of the MOCVD equipment according to claim 7, wherein a gas mixing chamber, an impurity source gas circuit, a radio frequency plasma generator and a stainless steel wire mesh are further arranged on the reaction chamber, the stainless steel wire mesh is arranged between the gas mixing chamber and the reaction chamber, the impurity source gas circuit is communicated with the gas mixing chamber, and the radio frequency plasma generator is arranged in the gas mixing chamber.
CN202210288980.4A 2022-03-23 2022-03-23 Heating device of MOCVD equipment Pending CN114622187A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115442927A (en) * 2022-11-04 2022-12-06 上海星原驰半导体有限公司 Composite temperature control disc

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Publication number Priority date Publication date Assignee Title
JPH06220643A (en) * 1993-01-23 1994-08-09 Nec Corp Vacuum treating device
CN1377991A (en) * 2002-01-30 2002-11-06 吉林大学 MOCVD equipment and process for growing ZnO film
CN1990903A (en) * 2005-12-31 2007-07-04 株式会社Ips Heater for depositing thin film
CN102851652A (en) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 Heater for MOCVD (metal-organic chemical vapor deposition) equipment
CN209481791U (en) * 2018-12-18 2019-10-11 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN111778552A (en) * 2020-08-03 2020-10-16 中国科学院长春光学精密机械与物理研究所 MOCVD (Metal organic chemical vapor deposition) combined spray header and MOCVD equipment
CN113832449A (en) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 Deposition apparatus and deposition method for semiconductor thin film

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06220643A (en) * 1993-01-23 1994-08-09 Nec Corp Vacuum treating device
CN1377991A (en) * 2002-01-30 2002-11-06 吉林大学 MOCVD equipment and process for growing ZnO film
CN1990903A (en) * 2005-12-31 2007-07-04 株式会社Ips Heater for depositing thin film
CN102851652A (en) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 Heater for MOCVD (metal-organic chemical vapor deposition) equipment
CN209481791U (en) * 2018-12-18 2019-10-11 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN113832449A (en) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 Deposition apparatus and deposition method for semiconductor thin film
CN111778552A (en) * 2020-08-03 2020-10-16 中国科学院长春光学精密机械与物理研究所 MOCVD (Metal organic chemical vapor deposition) combined spray header and MOCVD equipment

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CN115442927A (en) * 2022-11-04 2022-12-06 上海星原驰半导体有限公司 Composite temperature control disc
CN115442927B (en) * 2022-11-04 2023-03-10 上海星原驰半导体有限公司 Composite temperature control disc

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