CN106711022A - Preparation method for growing silicon carbide epitaxial film with clear doping interface - Google Patents
Preparation method for growing silicon carbide epitaxial film with clear doping interface Download PDFInfo
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Abstract
The invention discloses a preparation method for growing a silicon carbide epitaxial film with a clear doping interface, comprising the following steps: placing a silicon carbide substrate in a reaction chamber; letting the pressure and gas flow in the reaction chamber reach set values slowly, and heating the reaction chamber in a hydrogen flow; etching the silicon carbide substrate in situ; starting to grow a P-type or N-type doped silicon carbide epitaxial layer; growing a very thin epitaxial layer; etching the very thin epitaxial layer grown in step 5; growing multiple silicon carbide epitaxial layers which are of different doping types and are easily affected by doping residual, or continuously growing silicon carbide epitaxial layers which are of the same doping type and are less affected by doping residual; cooling the silicon carbide substrate in a high-pressure hydrogen atmosphere; and after the reaction chamber is cooled, vacuum-pumping the reaction chamber or filling the reaction chamber with argon to the atmospheric pressure, and taking out a silicon carbide epitaxial wafer. By using the preparation method, the background memory effect can be reduced effectively, and a silicon carbide epitaxial film with a clear doping interface can be formed.
Description
Technical field
Doped interface clearly carbon is grown the present invention relates to a kind of semiconductor device processing technology field, more particularly to one kind
The preparation method of SiClx epitaxial film.
Background technology
In recent years, carborundum (SiC) epitaxial material and device steadily and rapid growth, some fields its by
Step substitutes traditional silicon and GaAs material.For silicon and GaAs, carborundum has broad-band gap, high thermal conductivity, height
The advantages of breakdown strength, electronics saturation drift velocity high, hardness high, also there is very strong chemical stability.These are excellent
Physically and electrically performance makes carborundum in application with many advantages, is particularly suitable for high power, high temperature and frequency applications.
This parameter of the carrier concentration of carbofrax material is usual to be realized by material doped control.Therefore, carborundum
The doping of epitaxial material is one of critical process in prepared by device.However, can not be used because the bond strength of carborundum is high
Diffusion technique, can only be using extension control doping and high temperature tension doping.High temperature tension can cause a large amount of lattices to damage
Wound, forms the lattice defect that a large amount of annealing also are difficult to be completely eliminated, and has had a strong impact on the performance of device, and ion implanting efficiency is very
It is low, thus be not suitable for doing large area doping.Meanwhile, epitaxial material used by silicon carbide device is typically made up of epitaxial layer, especially
It is the epitaxial layer of different doping types, such as the structure epitaxial material such as MESFET.And p-type due to carrying out first or
Postpone a meeting or conference to form certain background memory effect outside n-type doping, cause the N-type for then carrying out or p-type doped epitaxial interface fuzzy.
It would therefore be highly desirable to solve the above problems.
The content of the invention
Goal of the invention：Background memory effect can be efficiently reduced it is an object of the invention to provide one kind, doped interface is formed
The clearly preparation method of silicon carbide epitaxial film.
Technical scheme：To realize object above, one kind of the present invention grows doped interface clearly silicon carbide epitaxy
The preparation method of film, comprises the following steps：
Step 1, silicon carbide substrates is placed into the reative cell for filling the carborundum chemical vapor depsotition equipment being pumped through, then will
Reative cell is evacuated；
Step 2, reative cell is slowly reached setting pressure and gas flow, in the hydrogen gas stream heating response room；
Silicon carbide substrates are carried out etching processing in situ by step 3；
Step 4, sets growth conditions, starts the silicon carbide epitaxial layers of growing P-type or n-type doping, comprises the steps：
(4.1) when reaction chamber temperature reaches 1550 DEG C~1600 DEG C, keep reaction chamber temperature, gas flow and pressure permanent
It is fixed；
(4.2) according to epitaxial growth needs, liquid trimethyl aluminium is positioned in bubbler, by 5ml/min~50ml/
Min hydrogen is passed through in bubbler, hydrogen is carried during trimethyl aluminium is passed through reative cell and is used as p-type doped source；Or by 0ml/min~
The high pure nitrogen of 2000ml/min is used as n-type doping source in being passed through reative cell；
(4.3) carbon source that flow is the silicon source of 5~100mL/min, flow is 5~200mL/min is passed through to reative cell to make
It is growth source, is passed through corresponding trimethyl aluminium or high pure nitrogen as doped source, growing P-type or n-type doping silicon carbide epitaxy
Layer, its growth time depends on epitaxial thickness；
Step 5, when in above-mentioned steps 4 grow for p-type doping silicon carbide epitaxial layers when, it is 5mL/min to use flow
Silicon source, control silicon source and carbon source flow-rate ratio, i.e. carbon silicon than 1.0~1.3, growth time be 1~6min, growing pullets thin epitaxy
Layer；When in above-mentioned steps 4 grow for n-type doping silicon carbide epitaxial layers when, it be the silicon source of 5mL/min to use flow, control
, than 1.5~1.8, growth time is 1-6min, growing pullets thin epitaxial layer for the flow-rate ratio of silicon source and carbon source, i.e. carbon silicon；Present invention step
In rapid 5 with low-carbon (LC) silicon than institute growing P-type or with high-carbon silicon than growth N-type very thin silicon carbide epitaxial layers can remove step 4
In doping residual.
Step 6, keeps reaction chamber temperature and pressure constant, interruption of growth source and doped source, and hydrogen etching 1 in situ~
30min is passed through hydrogen chloride assisted in situ hydrogen 5~15min of etching, etches away the very thin extension grown in above-mentioned steps 5
Layer；The very thin epitaxial layer in step 5 is etched away in step 6 of the present invention can efficiently reduce background memory effect, reduce defect
Produce.
Step 7, sets growth conditions, starts the growth silicon carbide epitaxial layers different from doping type in step 4；
Step 8,4 to the step that repeats the above steps 7 grows the different doping types of many numbers of plies or easily by the remaining shadow of doping
Loud silicon carbide epitaxial layers, and form doped interface clearly silicon carbide epitaxial film；Or 4 to the step 6 that repeats the above steps,
Continuously grow same doping type and be difficult to receive the silicon carbide epitaxial layers of doping residual effect；
Step 9, silicon carbide substrates are cooled down under big flow, high pressure hydrogen atmosphere；
Step 10, after the cooling of question response room, reative cell is vacuumized or argon gas fills reative cell to atmospheric pressure, takes out carborundum
Epitaxial wafer.
Wherein, silicon carbide substrates choose deflection in the step 1<11-20>The 4H silicon carbide substrates that 4 ° or 8 ° of direction,
Including 3~6 inches of conductive carbonized silicon substrates and semi insulating silicon carbide silicon substrate.
Preferably, chamber pressure is controlled to be gradually increased to 100~150mbar and hydrogen flowing quantity gradually in the step 2
Keep constant after increasing to 60~80L/min, then gradually increase reative cell power slowly raises reaction chamber temperature.
Further, in the step 3 when reaction chamber temperature is gradually risen to 1400~1450 DEG C, reaction chamber temperature is kept
The constant etching in situ for carrying out 20min；Or after reaction chamber temperature is gradually risen to 1400~1450 DEG C, in reative cell
The carbon source that flow is 5mL/min is passed through, keeps carbon source to be passed through flow constant, and continued to heat up until reach growth temperature, the liter
Warm process is to have carried out etching in situ.
Furthermore, the silicon source includes silane, trichlorosilane and dichloro hydrogen silicon, and carbon source includes ethene and propane.
Preferably, the hydrogen flowing quantity in the step 9 in reative cell is 60~120L/min, and the pressure in reative cell is
300-900mbar。
Beneficial effect：Compared with prior art, the present invention has following remarkable advantage：The preparation method is by growth first
Very thin epitaxial layer effectively removes doping residual during growth initial p type or n-type doping silicon carbide epitaxial layers；Further etch away
The very thin epitaxial layer can efficiently reduce background memory effect, reduce lacking for the types such as shallow cut, triangle, base plane dislocation
Fall into；Furthermore, the preparation method is in growing pullets thin epitaxial layer and is subsequently etched off on the Process ba- sis of the very thin epitaxial layer, in growth
Go out the different doping types of many numbers of plies of continued growth or easily residual by doping after initial p type or n-type doping silicon carbide epitaxial layers
The silicon carbide epitaxial layers of remaining influence, or continuously grow same doping type and be difficult to receive the silicon carbide epitaxy of doping residual effect
Layer, so as to form doped epitaxial interface is clear ground silicon carbide epitaxial film；Finally the preparation method process is simple is reasonable, extension work
Skill repeatability and uniformity are good, are favorably improved device performance, are adapted to large-scale production.
Brief description of the drawings
Fig. 1 is the multilayer silicon carbide epitaxial film SIMS test results of different doping types prepared by the present invention.
Specific embodiment
Technical scheme is described further below in conjunction with the accompanying drawings.
A kind of preparation method for growing doped interface clearly silicon carbide epitaxial film of the present invention, comprises the following steps：
Step 1, chooses deflection<11-20>(0001) the 4H-SiC substrates in 4 ° or 8 ° of direction, including 3~6 inches of conductions
Silicon carbide substrates and semi insulating silicon carbide silicon substrate, and standard cleaning is carried out to it；Silicon carbide substrates are placed into the carbon for filling and being pumped through
In the reative cell of SiClx chemical vapor depsotition equipment, then reative cell is evacuated.
Step 2, reative cell is slowly reached setting pressure and gas flow, in the hydrogen gas stream heating response room, specific steps
It is as follows：
(2.1) hydrogen switch for leading to reative cell is opened, control chamber pressure is gradually increased to 100~150mbar；
(2.2) keep chamber pressure constant, control hydrogen flowing quantity keeps constant after being gradually increased to 60~80L/min；
(2.3) gradually increase reative cell power slowly raises reaction chamber temperature.
Silicon carbide substrates are carried out etching processing in situ by step 3, when reaction chamber temperature is gradually risen to 1400~1450 DEG C
When, keep the constant etching in situ for carrying out 20min of reaction chamber temperature；Or when reaction chamber temperature is gradually risen to 1400~1450
After DEG C, to the carbon source that flow is 5mL/min is passed through in reative cell, flow is constant to keep carbon source to be passed through, and the carbon source includes ethene
And propane, and continue to heat up until reaching growth temperature, the temperature-rise period is to have carried out etching in situ.
Step 4, sets growth conditions, starts the silicon carbide epitaxial layers of growing P-type or n-type doping, comprises the steps：
(4.1) when reaction chamber temperature reaches 1550 DEG C~1600 DEG C, keep reaction chamber temperature, gas flow and pressure permanent
It is fixed；
(4.2) according to epitaxial growth needs, liquid trimethyl aluminium is positioned in bubbler, by 5ml/min~50ml/
Min hydrogen is passed through in bubbler, hydrogen is carried during trimethyl aluminium is passed through reative cell and is used as p-type doped source；Or by 0ml/min~
The high pure nitrogen of 2000ml/min is used as n-type doping source in being passed through reative cell, since 0, by flow control doping concentration；
(4.3) carbon source that flow is the silicon source of 5~100mL/min, flow is 5~200mL/min is passed through to reative cell to make
It is growth source, wherein, silicon source includes silane, trichlorosilane and dichloro hydrogen silicon, and carbon source is hydrogenated including the gaseous carbon such as ethene and propane
Compound；Corresponding trimethyl aluminium or high pure nitrogen are passed through again as doped source, growing P-type or n-type doping silicon carbide epitaxial layers,
Its growth time depends on epitaxial thickness.
Step 5, when in above-mentioned steps 4 grow for p-type doping silicon carbide epitaxial layers when, it is 5mL/min to use flow
Silicon source, control silicon source and carbon source flow-rate ratio, i.e. carbon silicon than 1.0~1.3, growth time be 1~6min, growing pullets thin epitaxy
Layer；When in above-mentioned steps 4 grow for n-type doping silicon carbide epitaxial layers when, it be the silicon source of 5mL/min to use flow, control
, than 1.5~1.8, growth time is 1-6min, growing pullets thin epitaxial layer for the flow-rate ratio of silicon source and carbon source, i.e. carbon silicon.
Step 6, keeps reaction chamber temperature and pressure constant, interruption of growth source and doped source, and hydrogen etching 1 in situ~
30min is passed through hydrogen chloride assisted in situ hydrogen 5~15min of etching, etches away the very thin extension grown in above-mentioned steps 5
Layer.
Step 7, sets growth conditions, starts the growth silicon carbide epitaxial layers different from doping type in step 4.
Step 8,4 to the step that repeats the above steps 7 grows the different doping types of many numbers of plies or easily by the remaining shadow of doping
Loud silicon carbide epitaxial layers, and form doped interface clearly silicon carbide epitaxial film；Or 4 to the step 6 that repeats the above steps,
Continuously grow same doping type and be difficult to receive the silicon carbide epitaxial layers of doping residual effect.
Step 9, silicon carbide substrates are cooled down under big flow, high pressure hydrogen atmosphere；Hydrogen flowing quantity wherein in reative cell
60~120L/min, the pressure in reative cell is 300-900mbar.
Step 10, after the cooling of question response room, reative cell is vacuumized or argon gas fills reative cell to atmospheric pressure, takes out carborundum
Epitaxial wafer.
Embodiment 1：Grow the double-decker epitaxial layer of continuous P/n-type doping
The preparation method of the silicon carbide epitaxial layers, comprises the following steps：
Step 1, chooses deflection<11-20>(0001) the 4H-SiC substrates in 4 ° of direction simultaneously carry out standard cleaning to it；By carbon
Silicon substrate is placed into the reative cell for filling the carborundum chemical vapor depsotition equipment being pumped through, then reative cell is evacuated.
Step 2, reative cell is slowly reached setting pressure and gas flow, in the hydrogen gas stream heating response room, specific steps
It is as follows：
(2.1) hydrogen switch for leading to reative cell is opened, control chamber pressure is gradually increased to 100mbar；
(2.2) keep chamber pressure constant, control hydrogen flowing quantity keeps constant after being gradually increased to 70L/min；
(2.3) gradually increase reative cell power slowly raises reaction chamber temperature.
Silicon carbide substrates are carried out etching processing in situ by step 3, when reaction chamber temperature is gradually risen to 1450 DEG C, are protected
Hold the constant etching in situ for carrying out 20min of reaction chamber temperature.
Step 4, sets growth conditions, starts the silicon carbide epitaxial layers of growing P-type doping, comprises the steps：
(4.1) when reaction chamber temperature reaches 1570 DEG C, keep reaction chamber temperature, gas flow and pressure constant；
(4.2) liquid trimethyl aluminium is positioned in bubbler, 5ml/min hydrogen is passed through in bubbler, take hydrogen
Band trimethyl aluminium is used as p-type doped source in being passed through reative cell；
(4.3) it is that the silane of 20mL/min, flow are the propane of 10mL/min as growth source to be passed through flow to reative cell,
Corresponding trimethyl aluminium is passed through again as doped source, growing P-type doped silicon carbide epitaxial layer, its growth time 30min.
Step 5, closes trimethyl aluminium switch, and it is the silane of 5mL/min to use flow, the flow of control silicon source and carbon source
Than that is, carbon silicon compares 1.2, and growth time is 2min, growing pullets thin epitaxial layer.
Step 6, keeps reaction chamber temperature and pressure constant, and interruption of growth source and doped source, hydrogen in situ etch 20min.
Step 7, sets growth conditions, starts the growth silicon carbide epitaxial layers different from doping type in step 4, specific step
It is rapid as follows：
(7.1) keep reaction chamber temperature, gas flow and pressure constant；
(7.2) be passed through flow for 200ml/min high pure nitrogens be used as n-type doping source, flow for 25mL/min propane,
Flow is the silane of 50mL/min, grows n-type doping silicon carbide epitaxial layers, growth time 30min.
Step 8, silicon carbide substrates are cooled down under big flow, high pressure hydrogen atmosphere, as follows with step：
(8.1) after clearly outer layer growth terminates doped interface, propane, silane, trimethyl aluminium and nitrogen are closed
Switch, stops growing；
(8.2) keep reative cell gas flow and pressure constant, epitaxial wafer is cooled down 20min in the hydrogen gas stream；
(8.3) reative cell air pressure is increased to 500mbar, continues to cool down in the hydrogen gas stream.
Step 10, after the cooling of question response room, reative cell is vacuumized or argon gas fills reative cell to atmospheric pressure, takes out carborundum
Epitaxial wafer, it is as follows with step：
(9.1) when reative cell quartz ampoule temperature is reduced to after 50 DEG C, the hydrogen switch of reative cell is led in closing；
(9.2) reative cell is vacuumized, until vacuum is higher than 3 × 10-6mbar；
(9.3) argon gas switch is opened, the argon gas that flow is 20L/min is passed through to reative cell, it is slow to improve reative cell air pressure
To normal pressure, reative cell is opened, take out silicon carbide epitaxial wafer.
Embodiment 2：The three-decker epitaxial layer of growth continuous P/N/N+ types doping
The preparation method of the silicon carbide epitaxial layers, comprises the following steps：
Step 1, chooses deflection<11-20>(0001) the 4H-SiC substrates in 8 ° of direction simultaneously carry out standard cleaning to it；By carbon
Silicon substrate is placed into the reative cell for filling the carborundum chemical vapor depsotition equipment being pumped through, then reative cell is evacuated.
Step 2, reative cell is slowly reached setting pressure and gas flow, in the hydrogen gas stream heating response room, specific steps
It is as follows：
(2.1) hydrogen switch for leading to reative cell is opened, control chamber pressure is gradually increased to 120mbar；
(2.2) keep chamber pressure constant, control hydrogen flowing quantity keeps constant after being gradually increased to 80L/min；
(2.3) gradually increase reative cell power slowly raises reaction chamber temperature.
Silicon carbide substrates are carried out etching processing in situ by step 3, when reaction chamber temperature is raised gradually to after 1450 DEG C,
To the ethene that flow is 5mL/min is passed through in reative cell, keep ethene to be passed through flow constant, and continue to heat up until reaching growth
Temperature, temperature-rise period is to have carried out etching in situ.
Step 4, sets growth conditions, starts the silicon carbide epitaxial layers of growing P-type doping, comprises the steps：
(4.1) when reaction chamber temperature reaches 1590 DEG C, keep reaction chamber temperature, gas flow and pressure constant；
(4.2) liquid trimethyl aluminium is positioned in bubbler, 10ml/min hydrogen is passed through in bubbler, take hydrogen
Band trimethyl aluminium is used as p-type doped source in being passed through reative cell；
(4.3) it is that the silane of 20mL/min, flow are the ethene of 10mL/min as growth source to be passed through flow to reative cell,
Corresponding trimethyl aluminium is passed through again as doped source, growing P-type doped silicon carbide epitaxial layer, its growth time 30min.
Step 5, closes trimethyl aluminium switch, and it is the silane of 5mL/min to use flow, the flow of control silicon source and carbon source
Than that is, carbon silicon compares 1.2, and growth time is 1min, growing pullets thin epitaxial layer.
Step 6, keeps reaction chamber temperature and pressure constant, and interruption of growth source and doped source, hydrogen in situ etch 10min.
Step 7, sets growth conditions, starts to grow the silicon carbide epitaxial layers of n-type doping, comprises the following steps that：
(7.1) keep reaction chamber temperature, gas flow and pressure constant；
(7.2) be passed through flow for 300ml/min high pure nitrogens be used as n-type doping source, flow for 25mL/min ethene,
Flow is the silane of 50mL/min, grows n-type doping silicon carbide epitaxial layers, growth time 10min.
Step 8, closes trimethyl aluminium switch, and it is the silane of 5mL/min to use flow, the flow of control silicon source and carbon source
Than that is, carbon silicon compares 1.6, and growth time is 1min, growing pullets thin epitaxial layer.
Step 9, keeps reaction chamber temperature and pressure constant, and interruption of growth source and doped source, hydrogen in situ etch 10min.
Step 10, sets growth conditions, starts the carbonization of growth and the n-type doping of doping concentration very different in step 7
Silicon epitaxy layer, comprises the following steps that：
(10.1) keep reaction chamber temperature, gas flow and pressure constant；
(10.2) be passed through flow for 2000ml/min high pure nitrogens be used as n-type doping source, flow for 5mL/min ethene,
Flow is the silane of 10mL/min, grows N+ type doped silicon carbide epitaxial layers, growth time 10min.
Step 11, silicon carbide substrates are cooled down under big flow, high pressure hydrogen atmosphere, as follows with step：
(11.1) after clearly outer layer growth terminates doped interface, propane, silane, trimethyl aluminium and nitrogen are closed
Switch, stops growing；
(11.2) keep reative cell gas flow and pressure constant, epitaxial wafer is cooled down 20min in the hydrogen gas stream；
(11.3) reative cell air pressure is increased to 500mbar, continues to cool down in the hydrogen gas stream.
Step 12, after the cooling of question response room, reative cell is vacuumized or argon gas fills reative cell to atmospheric pressure, takes out carborundum
Epitaxial wafer, it is as follows with step：
(12.1) when reative cell quartz ampoule temperature is reduced to after 50 DEG C, the hydrogen switch of reative cell is led in closing；
(12.2) reative cell is vacuumized, until vacuum is higher than 3 × 10-6mbar；
(12.3) argon gas switch is opened, the argon gas that flow is 20L/min is passed through to reative cell, it is slow to improve reative cell air pressure
To normal pressure, reative cell is opened, take out silicon carbide epitaxial wafer.
Preparation method of the present invention effectively removes growth initial p type or n-type doping carborundum by growing pullets thin epitaxial layer
Doping residual during epitaxial layer；Further etching away the very thin epitaxial layer can efficiently reduce background memory effect, reduce shallow stroke
The defect of the types such as trace, triangle, base plane dislocation；Furthermore, the preparation method is in growing pullets thin epitaxial layer and is subsequently etched off
On the Process ba- sis of the very thin epitaxial layer, the continued growth multilayer after initial p type or n-type doping silicon carbide epitaxial layers is grown
Several different doping types or easily by the silicon carbide epitaxial layers of doping residual effect, or continuously grow same doping type and not
Easily by the silicon carbide epitaxial layers of doping residual effect, so as to form doped epitaxial interface is clear ground silicon carbide epitaxial film；Finally
Rationally, epitaxy technique repeatability and uniformity are good, are favorably improved device performance for the preparation method process is simple, are adapted to scale life
Produce.
Claims (6)
1. a kind of preparation method for growing doped interface clearly silicon carbide epitaxial film, it is characterised in that comprise the following steps：
Step 1, silicon carbide substrates is placed into the reative cell for filling the carborundum chemical vapor depsotition equipment being pumped through, then will reaction
Room is evacuated；
Step 2, reative cell is slowly reached setting pressure and gas flow, in the hydrogen gas stream heating response room；
Silicon carbide substrates are carried out etching processing in situ by step 3；
Step 4, sets growth conditions, starts the silicon carbide epitaxial layers of growing P-type or n-type doping, comprises the steps：
(4.1) when reaction chamber temperature reaches 1550 DEG C~1600 DEG C, keep reaction chamber temperature, gas flow and pressure constant；
(4.2) according to epitaxial growth needs, liquid trimethyl aluminium is positioned in bubbler, by 5ml/min~50ml/min hydrogen
Gas is passed through in bubbler, hydrogen is carried during trimethyl aluminium is passed through reative cell and is used as p-type doped source；Or by 0ml/min~
The high pure nitrogen of 2000ml/min is used as n-type doping source in being passed through reative cell；
(4.3) flow is the silicon source of 5~100mL/min, flow is 5~200mL/min carbon source is passed through as life to reative cell
Source long, is passed through corresponding trimethyl aluminium or high pure nitrogen as doped source, growing P-type or n-type doping silicon carbide epitaxial layers, its
Growth time depends on epitaxial thickness；
Step 5, when in above-mentioned steps 4 grow for p-type doping silicon carbide epitaxial layers when, it is the silicon of 5mL/min to use flow
The flow-rate ratio of source, control silicon source and carbon source, i.e. than 1.0~1.3, growth time is 1~6min, growing pullets thin epitaxial layer to carbon silicon；
When in above-mentioned steps 4 grow for n-type doping silicon carbide epitaxial layers when, it be the silicon source of 5mL/min to use flow, control silicon source
With the flow-rate ratio of carbon source, i.e. carbon silicon than 1.5~1.8, growth time is 1-6min, growing pullets thin epitaxial layer；
Step 6, keeps reaction chamber temperature and pressure constant, interruption of growth source and doped source, hydrogen in situ etch 1~30min or
Person is passed through hydrogen chloride assisted in situ hydrogen and etches 5~15min, etches away the very thin epitaxial layer grown in above-mentioned steps 5；
Step 7, sets growth conditions, starts the growth silicon carbide epitaxial layers different from doping type in step 4；
Step 8,4 to the step that repeats the above steps 7 grows the different doping types of many numbers of plies or easily by doping residual effect
Silicon carbide epitaxial layers, and form doped interface clearly silicon carbide epitaxial film；Or 4 to the step 6 that repeats the above steps, continuously
Grow same doping type and be difficult to receive the silicon carbide epitaxial layers of doping residual effect；
Step 9, silicon carbide substrates are cooled down under big flow, high pressure hydrogen atmosphere；
Step 10, after the cooling of question response room, reative cell is vacuumized or argon gas fills reative cell to atmospheric pressure, takes out silicon carbide epitaxy
Piece.
2. the preparation method of growth doped interface clearly silicon carbide epitaxial film according to claim 1, its feature exists
In：Silicon carbide substrates choose deflection in the step 1<11-20>The 4H silicon carbide substrates that 4 ° or 8 ° of direction, including 3~6 English
Very little conductive carbonized silicon substrate and semi insulating silicon carbide silicon substrate.
3. the preparation method of growth doped interface clearly silicon carbide epitaxial film according to claim 1, its feature exists
In：Controlled in the step 2 chamber pressure be gradually increased to 100~150mbar and hydrogen flowing quantity be gradually increased to 60~
Keep constant after 80L/min, then gradually increase reative cell power slowly raises reaction chamber temperature.
4. the preparation method of growth doped interface clearly silicon carbide epitaxial film according to claim 1, its feature exists
In：In the step 3 when reaction chamber temperature is gradually risen to 1400~1450 DEG C, keep that reaction chamber temperature is constant carries out
The etching in situ of 20min；Or after reaction chamber temperature is gradually risen to 1400~1450 DEG C, to being passed through flow in reative cell
It is the carbon source of 5mL/min, keeps carbon source to be passed through flow constant, and continues to heat up until reaching growth temperature, the temperature-rise period is
Etching in situ is carried out.
5. the preparation method of the clearly silicon carbide epitaxial film of the growth doped interface according to claim 1 or 4, its feature
It is：The silicon source includes silane, trichlorosilane and dichloro hydrogen silicon, and carbon source includes ethene and propane.
6. the preparation method of growth doped interface clearly silicon carbide epitaxial film according to claim 1, its feature exists
In：Hydrogen flowing quantity in the step 9 in reative cell is 60~120L/min, and the pressure in reative cell is 300-900mbar.
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