WO2022206061A1 - Semiconductor process control method and semiconductor process device - Google Patents

Semiconductor process control method and semiconductor process device Download PDF

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Publication number
WO2022206061A1
WO2022206061A1 PCT/CN2021/141910 CN2021141910W WO2022206061A1 WO 2022206061 A1 WO2022206061 A1 WO 2022206061A1 CN 2021141910 W CN2021141910 W CN 2021141910W WO 2022206061 A1 WO2022206061 A1 WO 2022206061A1
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preset
parameter
function
intake
control
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PCT/CN2021/141910
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French (fr)
Chinese (zh)
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顾文亮
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北京北方华创微电子装备有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to the field of semiconductor technology, in particular, to a control method of a semiconductor process and a semiconductor process equipment.
  • the process Before performing semiconductor processes such as CVD (Chemical Vapor Deposition, chemical vapor deposition) process, ALD (Atomic Layer Deposition, atomic layer deposition) process, PVD (Physical Vapour Deposition, physical vapor deposition) process, etc., the process
  • the chamber is usually under vacuum, and after the wafer is introduced into the process chamber, the susceptor is raised or the wafer is lowered so that the wafer rests on the susceptor surface (this process step is called Ped-up, for the chamber. Preparatory steps for air intake). After the Ped-up process step is completed, the process gas is passed into the process chamber, and the chamber pressure is controlled to the target value to start the process (this process step is called Gas-on, which is the chamber air intake process step).
  • the wafer often slips after the Ped-up process step, which affects the uniformity and performance of the film deposited on the wafer surface, and the film grown on the wafer surface also Problems such as surface warpage and delamination often occur, and the product yield is low.
  • the present invention aims to provide a semiconductor process control method and semiconductor process equipment, and the control method can improve the uniformity of the semiconductor process deposition film and improve the film quality.
  • a method for controlling a semiconductor process which is applied to an air intake assembly of a semiconductor process equipment, and the air intake assembly is used to provide gas to a process chamber of the semiconductor process equipment, so
  • the control methods include:
  • the air intake process recipe includes at least one air intake control parameter corresponding to a semiconductor process step, and at least one of all the air intake control parameters corresponds to a change in a preset process parameter
  • the intake control parameter corresponding to the variation of the preset process parameter also corresponds to a preset function related to the intake control parameter and the preset process parameter;
  • the types of the intake control parameter include the process chamber provides at least one of a flow of process gas and a gas pressure within the process chamber;
  • the size of the intake control parameter corresponding to the preset function is controlled according to the preset function to gradually increase with the change of the corresponding preset process parameter, until the preset function is The process parameters reach the stated variation.
  • the size of the intake control parameter not corresponding to the preset process parameter and the preset function is adjusted to the target control amount corresponding to the intake control parameter, And when the semiconductor process steps are executed, the magnitude of the intake air control parameter is kept unchanged at the target control amount corresponding to the intake air control parameter.
  • the air intake control parameter includes a flow rate of the process gas provided to the process chamber and a gas pressure in the process chamber; the flow rate corresponds to a variation of the preset process parameter and the preset process parameter.
  • Set a function; the gas pressure does not correspond to the preset process parameter and the preset function, but corresponds to the target control amount.
  • the preset process parameters include the duration of executing the semiconductor process steps, the opening of the flow regulating valve of the process chamber for adjusting the flow of exhaust gas, or the heater for carrying and heating the wafer. heating temperature.
  • the preset function is a continuous function.
  • the preset function is a continuously differentiable function.
  • the preset function is a univariate linear function, a logarithmic function, a power exponential function, a binary function, a ternary function or a parabolic equation.
  • the intake process recipe further includes target process parameter values corresponding to the preset process parameters
  • the control method further includes:
  • the size of the intake control parameter corresponding to the preset process parameter is kept unchanged until the preset process parameter reaches the target process parameter value.
  • the current amount of the preset process parameter is the current duration of the semiconductor process step
  • the target process parameter value is the total duration required to complete the semiconductor process step
  • a semiconductor process equipment comprising a process chamber and an air intake assembly, the air intake assembly is used for supplying gas to the process chamber, and a controller, the controller uses The aforementioned control method is implemented for controlling the air intake assembly.
  • the semiconductor process control method and the technical solution of the semiconductor process equipment provided by the present invention, by setting at least one intake control parameter (including the flow rate of the process gas provided to the process chamber and the gas in the process chamber) in the intake process recipe at least one of the pressure), and the variation of the preset process parameter corresponding to at least one of all the air intake control parameters, and when the semiconductor process steps are executed, according to the air intake control parameter and the preset
  • the preset function of the process parameter which controls the size of the intake control parameter corresponding to the preset function to gradually increase with the change of the corresponding preset process parameter, so that the size of the intake control parameter can be changed slowly and smoothly, thereby Slow-release air intake can be realized at the beginning of the air intake process step, which improves the stability of the air flow field in the process chamber and avoids the offset of the wafer position.
  • the size of the above-mentioned gas inlet control parameters realizes a slow and smooth change, for example, at least one of the flow rate of the process gas provided to the process chamber and the gas pressure in the process chamber is gradually increased, and it is also possible to perform a semiconductor process.
  • the composition of the deposited film changes more gently, so that the combination with the underlying film or the substrate is firmer, and the stress gap between the film layers is smaller, so that the film quality can be improved.
  • FIG. 1 is a schematic structural diagram of a process chamber in a typical semiconductor process equipment
  • Fig. 2 is the position schematic diagram that the wafer is placed on the base
  • Figure 3 is a schematic diagram of the position of the wafer after the wafer has been slid
  • Fig. 4 is the schematic diagram of thin film growth situation in the prior art
  • Fig. 5 is the schematic diagram of the thin film growth situation in the embodiment of adopting the control method provided by the present invention.
  • FIG. 6 is a schematic flowchart of a control method provided by an embodiment of the present invention.
  • FIG. 7 is a schematic flowchart of a control method provided by another embodiment of the present invention.
  • FIG. 8 is a schematic flowchart of a control method provided by another embodiment of the present invention.
  • FIG. 9 is a schematic flowchart of a control method provided by another embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a process chamber in a typical semiconductor process equipment.
  • the process chamber includes: a cavity 1 , a base 2 , a uniform air window 3 , a quartz window 4 , and an air inlet 5 .
  • the robot hand introduces the wafer 6 into the cavity 1 and places it on the base 2, and the process gas enters the homogeneous cavity between the quartz window 4 and the homogeneous window 3 through the air inlet 5 above the homogeneous window 3, Then enter the process space below the air distribution window 3 through the air distribution window 3, so that the process gas fills the entire process space, so that the wafer 6 is placed in the process gas.
  • the robot hand transfers the wafer 6 into the cavity 1 and places it in the middle position of the base 2 , which is shown in FIG. 2 .
  • a relatively high gas pressure needs to be used in the process chamber.
  • the flow of process gas is higher than 1000sccm (Standard Cubic Centimeterper Minute , standard milliliters per minute), the gas pressure is greater than 100mtorr, when a large amount of process gas is introduced into the process chamber, it is very easy to cause airflow disturbance in the chamber, so that the wafer 6 and the base 2 are changed under the action of the airflow.
  • Relative position there is a sliding problem as shown in Figure 3.
  • the following table 1 is a gas inlet process formula adopted by an existing semiconductor process.
  • the gas feeding into the process chamber The process gas is Ar, and the flow rate of Ar is 30000sccm.
  • the process gas introduced into the process chamber may be one or more of Ar, N 2 , O 2 , C 2 H 2 , etc.) ;
  • the gas pressure in the chamber (Pressure) is 6torr.
  • a process gas with a flow rate of 30000sccm is introduced into the process chamber in a short time, and the gas pressure in the chamber is changed from the original gas pressure before the start of the Gas-on process step in a short time.
  • the gas pressure (which is close to 0torr, eg 10-3torr) changes to 6torr, which causes abrupt changes in the airflow in the chamber and disturbances to the wafer on the susceptor, resulting in a slider problem.
  • Step 1 Step Name Ped-up Gas-on Time/s 1.0 20.0 Ar/sccm 0 30000 Ped Up Up Press Mode FullOpen Pressure Pressure/torr 0 6
  • the wafer 6 slides in the chamber, on the one hand, it will affect the uniformity and performance of the film deposited on the surface of the wafer 6, and on the other hand, it will also affect the execution of the process. In severe cases, the wafer 6 and the cavity may occur. Body 1 collides, producing particles or fragments. On the other hand, it will also affect the process of the robot taking out the wafer 6 from the chamber after the process is performed.
  • the collision causes the wafer to be broken, or the robot successfully picks up the wafer 6 but collides with the chamber 1 when the wafer 6 is moved out of the chamber, causing the wafer to be broken, or because the wafer 6 slides at a large position, the robot The wafer was successfully retrieved, but the wafer 6 was dropped from the robot due to the excessive offset distance, etc., which forced the semiconductor process to be suspended, which affected the machine productivity and increased additional maintenance costs.
  • the composition of the film to be grown and treated is usually quite different from that of the underlying film or substrate.
  • the composition or properties of the newly grown film and the underlying film or substrate are too different to cause stress bending of the film or the entire wafer, or the bonding force between the film layers is not strong, resulting in
  • the phenomenon of delamination affects the deposition quality of the film ( Figure 4 shows the growth of the film corresponding to the intake process formula shown in Table 1, and the difference in the color depth of the film is used to represent the difference in film composition as an example.
  • the composition differs significantly from that of the underlying film or substrate).
  • a method for controlling a semiconductor process is provided, which is applied to an air intake assembly of a semiconductor process equipment, and the air intake assembly is used to provide a gas to a process chamber of the semiconductor process equipment, such as As shown in Figure 6, the control method includes:
  • Step S1 receiving an air intake process recipe
  • the air intake process recipe includes at least one air intake control parameter corresponding to the semiconductor process step, and at least one of all the air intake control parameters corresponds to a change in a preset process parameter
  • the intake control parameter corresponding to the variation of the preset process parameter also corresponds to a preset function related to the intake control parameter and the preset process parameter;
  • the types of the intake control parameter include providing process to the process chamber at least one of the flow rate of the gas and the pressure of the gas within the process chamber;
  • the above-mentioned preset process parameters include the duration of the semiconductor process steps (for example, the accumulated duration of the process or the accumulated duration of supplying the process gas to the process chamber), the duration of the process chamber for adjusting the exhaust flow.
  • the opening of a flow regulating valve such as a butterfly valve
  • the heating temperature of the heater used to carry and heat the wafer may also be other reference quantities that can reflect the change progress of the above-mentioned flow rate and gas pressure and can be obtained in real time.
  • the above-mentioned preset process parameters are variables, which are changed during the execution of the semiconductor process steps. Changes occur during the process until the final value is reached, and the difference between the final value and the initial value is the change amount of the above-mentioned preset process parameters.
  • Step S2 When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the preset process parameter according to the preset function, until the preset process parameter reaches the above-mentioned variation.
  • the intake process recipe includes two intake control parameters corresponding to the semiconductor process steps, which are the flow rate F and the gas pressure P, respectively, and the intake process recipe also includes a preset corresponding to the flow rate F.
  • Change the gas pressure in the chamber that is, the flow rate F of the process gas introduced into the chamber changes from small to large during the execution of the Gas-on process step (the starting point is preferably 0 sccm), and/or, the gas pressure in the process chamber
  • the change of P from small to large can avoid the sudden change of the intake air amount when switching between steps and cause the sudden change of the airflow field in the process chamber, thereby improving the stability of the airflow field in the process chamber, avoiding the deviation of the wafer position, and then
  • the safety of the semiconductor process can be improved, and the stable operation of the semiconductor process equipment can also be ensured in the case of continuous wafer running.
  • the deposition process of the film deposited by the control method provided by the present invention is affected by the slow and smooth change process of the flow rate F of the process gas from small to large, and the film is represented by the difference in the degree of color depth of the film. Taking the composition difference as an example, the film composition shows an obvious continuous change trend, which effectively reduces the stress difference caused by the composition difference between the films.
  • may be a univariate linear function y ax+b; or, in some implementations of the present invention
  • the intake control parameters corresponding to the semiconductor process steps in the intake process recipe there may be at least one variation and preset function corresponding to the preset process parameters.
  • the variation of the preset process parameters and the preset function it can always be a fixed value during the process of executing the semiconductor process steps.
  • the above-mentioned intake process formula further includes a target control quantity corresponding to the intake control parameters not corresponding to the preset process parameters and preset functions; and, the above-mentioned control method further includes:
  • the size of the intake control parameter that does not correspond to the preset process parameter and the preset function is adjusted to the target control amount corresponding to the intake control parameter, and when the semiconductor process step is performed, the size of the intake control parameter is adjusted.
  • the magnitude of the intake air control parameter remains unchanged at the target control amount corresponding to the intake air control parameter.
  • the size of the intake control parameter that does not correspond to the preset process parameters and the preset function is a constant value when the semiconductor process step is performed, and the constant value can be preset in the intake process recipe before the semiconductor process step starts. .
  • control method includes:
  • Step S1 receive the air intake process formula, then judge whether various air intake control parameters in this air intake process formula correspond to a preset function; if so, proceed to step S2; if not, proceed to step S3;
  • Step S2 When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the preset process parameter according to the preset function, until the preset process parameter reaches the above-mentioned variation.
  • Step S3 before the semiconductor process step starts, adjust the size of the air intake control parameter that does not correspond to the preset process parameter and the preset function to the target control amount corresponding to the air intake control parameter, and when executing the semiconductor process step , the magnitude of the intake control parameter is kept constant at the target control amount corresponding to the intake control parameter.
  • the intake process recipe also includes target process parameter values corresponding to the above preset process parameters, as shown in FIG. 8 and FIG. 9 , on the basis of the control method shown in FIG. 6 or FIG. 7 , the control method further includes:
  • Step S4 after the preset process parameter reaches the above-mentioned variation, keep the size of the intake control parameter corresponding to the preset process parameter unchanged until the preset process parameter reaches the target process parameter value.
  • the target process parameter value is the total duration required to complete the semiconductor process step.
  • the air intake process formula can be sent to the air intake component through the process formula table.
  • the preset process parameter x in the table adopts the intake time (time for supplying the process gas) t, and the process gas adopts argon (Ar).
  • Step 1 2 Step Name Ped-up Ga-son Time/s t 1 t 2
  • the process step name is the process step of Ped-up, which is used for air intake preparation, and the process step of Ped-up lasts for a short time t 1 , and the air intake assembly is operated at a flow rate F 1 ( It can be zero) to provide process gas to the process chamber.
  • the gas inlet component can enter the gas in the duration (Gason Duration Time) t 3 (that is, the variation of the preset process parameters).
  • the intake air flow F is maintained at the target flow value F within the time (t 2 -t 3 ) before the intake air time t reaches the target intake air time t 2 (ie, the target process parameter value) given in the process recipe. 2 .
  • the air intake assembly is in the FullOpen mode, that is, the opening of the flow regulating valve (such as a butterfly valve) used to adjust the exhaust flow in the process chamber is the maximum opening degree, and the process chamber is not opened at this time.
  • Step 1 2 Step Name Ped-up Gason Time/s 1.0 20.0 Gason Duration Time 0.0 10.0 Ar/sccm (take Ar gas as an example) 0 30000 Ped Up Up Press Mode FullOpen Pressure Pressure/torr 0 6 Pressure Reach Time 0.0 0.0
  • the intake component automatically controls the size of the airflow and the opening of the butterfly valve through a closed loop, so that the intake flow F of the process gas follows the gas flow function within the target intake time (Gason Duration Time) of 10.0s.
  • t 2 -t 3 10.0s in the chamber
  • the intake air flow F remains unchanged at 30000sccm.
  • the gas pressure P does not correspond to a preset pressure function, and the specified pressure arrival time t 4 is 0.
  • the gas pressure P in the process chamber first rises to 6 torr before the semiconductor process step starts, and then remains during the semiconductor process step. Stable on 6torr.
  • a semiconductor process equipment comprising a process chamber, an air intake assembly and a controller, wherein the air intake assembly is used for providing gas to the process chamber; the controller is used for controlling the air intake
  • the component implements the foregoing control method provided by the embodiment of the present invention.
  • At least one air intake control parameter (including the control of supplying process gas to the process chamber) is set in the air intake process recipe. at least one of the flow rate and the gas pressure in the process chamber), and the variation of the preset process parameters corresponding to at least one of all the gas inlet control parameters, and when performing the semiconductor process steps, according to the process
  • the air control parameter and the preset function of the preset process parameter are controlled, and the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the change of the corresponding preset process parameter, so that the size of the intake control parameter can be realized.
  • the slow and smooth change allows for a slow release of the gas inlet at the beginning of the gas inlet process step, improving the stability of the gas flow field in the process chamber and avoiding the offset of the wafer position.
  • the size of the above-mentioned gas inlet control parameters realizes a slow and smooth change, for example, at least one of the flow rate of the process gas provided to the process chamber and the gas pressure in the process chamber is gradually increased, and it is also possible to perform a semiconductor process.
  • the composition of the deposited film changes more gently, so that the combination with the underlying film or the substrate is firmer, and the stress gap between the film layers is smaller, so that the film quality can be improved.

Abstract

The present invention provides a semiconductor process control method and a semiconductor process device. The control method comprises: receiving a gas inlet process formula, the gas inlet process formula comprising at least one gas inlet control parameter corresponding to a semiconductor process step, and the variable quantity of a preset process parameter corresponding to at least one of all gas inlet control parameters, the gas inlet control parameter corresponding to the variable quantity of the preset process parameter further corresponding to a preset function with regard to the gas inlet control parameter and the preset process parameter, and the type of the gas control parameter comprising at least one of flow of process gas provided for a process chamber and gas pressure in the process chamber; and when the semiconductor process step is executed, controlling, according to the preset function, the gas inlet control parameter corresponding to the preset function to be gradually increased along with the change of the preset process parameter until the preset process parameter reaches the variable quantity. The present invention can improve the uniformity of a deposited thin film of a semiconductor process and improve the quality of the thin film.

Description

半导体工艺的控制方法和半导体工艺设备Semiconductor process control method and semiconductor process equipment 技术领域technical field
本发明涉及半导体工艺领域，具体地，涉及一种半导体工艺的控制方法和一种半导体工艺设备。The present invention relates to the field of semiconductor technology, in particular, to a control method of a semiconductor process and a semiconductor process equipment.
背景技术Background technique
在半导体工艺领域，在执行诸如CVD(Chemical Vapor Deposition，化学气相沉积)工艺、ALD(Atomic Layer Deposition，原子层沉积)工艺、PVD(Physical Vapour Deposition，物理气相沉积)工艺等的半导体工艺之前，工艺腔室通常处于真空状态，在将晶圆传入工艺腔室之后，将基座升高或者将晶圆降下，使晶圆置于基座表面(该工艺步骤称为Ped-up，为腔室进气的准备步骤)。Ped-up工艺步骤执行完毕后，将工艺气体通入工艺腔室，同时控制腔室压力至目标值，开始执行工艺(该工艺步骤称为Gas-on，为腔室进气工艺步骤)。In the field of semiconductor technology, before performing semiconductor processes such as CVD (Chemical Vapor Deposition, chemical vapor deposition) process, ALD (Atomic Layer Deposition, atomic layer deposition) process, PVD (Physical Vapour Deposition, physical vapor deposition) process, etc., the process The chamber is usually under vacuum, and after the wafer is introduced into the process chamber, the susceptor is raised or the wafer is lowered so that the wafer rests on the susceptor surface (this process step is called Ped-up, for the chamber. Preparatory steps for air intake). After the Ped-up process step is completed, the process gas is passed into the process chamber, and the chamber pressure is controlled to the target value to start the process (this process step is called Gas-on, which is the chamber air intake process step).
然而，现有的半导体工艺设备进行上述半导体工艺时，晶圆常在Ped-up工艺步骤后发生滑片，影响晶圆表面沉积薄膜的均匀性与薄膜性能，并且，晶圆表面生长的薄膜也常出现表面翘曲、产生剥层等问题，产品良率低。However, when the existing semiconductor process equipment performs the above-mentioned semiconductor process, the wafer often slips after the Ped-up process step, which affects the uniformity and performance of the film deposited on the wafer surface, and the film grown on the wafer surface also Problems such as surface warpage and delamination often occur, and the product yield is low.
因此，如何提供一种能够提高半导体工艺沉积薄膜的均匀性、改善薄膜质量的半导体工艺控制方法，成为本领域亟待解决的技术问题。Therefore, how to provide a semiconductor process control method capable of improving the uniformity of the film deposited by the semiconductor process and improving the quality of the film has become an urgent technical problem to be solved in the art.
发明内容SUMMARY OF THE INVENTION
本发明旨在提供一种半导体工艺的控制方法和半导体工艺设备，该控制方法能够提高半导体工艺沉积薄膜的均匀性、改善薄膜质量。The present invention aims to provide a semiconductor process control method and semiconductor process equipment, and the control method can improve the uniformity of the semiconductor process deposition film and improve the film quality.
为实现上述目的，作为本发明的一个方面，提供一种半导体工艺的控制 方法，应用于半导体工艺设备的进气组件，所述进气组件用于向半导体工艺设备的工艺腔室提供气体，所述控制方法包括：In order to achieve the above object, as an aspect of the present invention, a method for controlling a semiconductor process is provided, which is applied to an air intake assembly of a semiconductor process equipment, and the air intake assembly is used to provide gas to a process chamber of the semiconductor process equipment, so The control methods include:
接收进气工艺配方，所述进气工艺配方包括与半导体工艺步骤对应的至少一种进气控制参数，以及所有的所述进气控制参数中有至少一种所对应的预设工艺参数的变化量；对应有所述预设工艺参数的变化量的所述进气控制参数还对应有关于该进气控制参数和该预设工艺参数的预设函数；所述进气控制参数的种类包括向所述工艺腔室提供工艺气体的流量和所述工艺腔室内的气体压强中的至少一者；Receive an air intake process recipe, the air intake process recipe includes at least one air intake control parameter corresponding to a semiconductor process step, and at least one of all the air intake control parameters corresponds to a change in a preset process parameter The intake control parameter corresponding to the variation of the preset process parameter also corresponds to a preset function related to the intake control parameter and the preset process parameter; the types of the intake control parameter include the process chamber provides at least one of a flow of process gas and a gas pressure within the process chamber;
在执行所述半导体工艺步骤时，按所述预设函数控制与该预设函数对应的所述进气控制参数的大小随对应的所述预设工艺参数的变化而逐渐增加，直至该预设工艺参数达到所述变化量。When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled according to the preset function to gradually increase with the change of the corresponding preset process parameter, until the preset function is The process parameters reach the stated variation.
可选地，所有的所述进气控制参数中有至少一种未对应有所述预设工艺参数和所述预设函数；所述进气工艺配方还包括与未对应有所述预设工艺参数和所述预设函数的所述进气控制参数对应的目标控制量；所述控制方法还包括：Optionally, at least one of all the intake control parameters does not correspond to the preset process parameter and the preset function; the intake process recipe also includes and does not correspond to the preset process. parameter and the target control amount corresponding to the intake control parameter of the preset function; the control method further includes:
在所述半导体工艺步骤开始之前，将未对应有所述预设工艺参数和所述预设函数的所述进气控制参数的大小调整为与该进气控制参数对应的所述目标控制量，并在执行所述半导体工艺步骤时，将所述进气控制参数的大小保持在与该进气控制参数对应的所述目标控制量不变。Before the start of the semiconductor process step, the size of the intake control parameter not corresponding to the preset process parameter and the preset function is adjusted to the target control amount corresponding to the intake control parameter, And when the semiconductor process steps are executed, the magnitude of the intake air control parameter is kept unchanged at the target control amount corresponding to the intake air control parameter.
可选地，所述进气控制参数包括向所述工艺腔室提供工艺气体的流量和所述工艺腔室内的气体压强；所述流量对应有所述预设工艺参数的变化量和所述预设函数；所述气体压强未对应有所述预设工艺参数和所述预设函数，而对应有所述目标控制量。Optionally, the air intake control parameter includes a flow rate of the process gas provided to the process chamber and a gas pressure in the process chamber; the flow rate corresponds to a variation of the preset process parameter and the preset process parameter. Set a function; the gas pressure does not correspond to the preset process parameter and the preset function, but corresponds to the target control amount.
可选地，所述预设工艺参数包括执行所述半导体工艺步骤的时长、所述工艺腔室的用于调节排气流量的流量调节阀的开度或者用于承载并加热晶圆 的加热器的加热温度。Optionally, the preset process parameters include the duration of executing the semiconductor process steps, the opening of the flow regulating valve of the process chamber for adjusting the flow of exhaust gas, or the heater for carrying and heating the wafer. heating temperature.
可选地，所述预设函数为连续函数。Optionally, the preset function is a continuous function.
可选地，所述预设函数为连续可导函数。Optionally, the preset function is a continuously differentiable function.
可选地，所述预设函数为一元线性函数、对数函数、幂指数函数、二元函数、三元函数或抛物线方程。Optionally, the preset function is a univariate linear function, a logarithmic function, a power exponential function, a binary function, a ternary function or a parabolic equation.
可选地，所述进气工艺配方还包括与所述预设工艺参数对应的目标工艺参数值，所述控制方法还包括：Optionally, the intake process recipe further includes target process parameter values corresponding to the preset process parameters, and the control method further includes:
在所述预设工艺参数达到所述变化量之后，将与该预设工艺参数对应的所述进气控制参数的大小保持不变，直至所述预设工艺参数达到所述目标工艺参数值。After the preset process parameter reaches the change amount, the size of the intake control parameter corresponding to the preset process parameter is kept unchanged until the preset process parameter reaches the target process parameter value.
可选地，所述预设工艺参数的当前量为所述半导体工艺步骤当前已执行的时长，所述目标工艺参数值为完成所述半导体工艺步骤所需的总时长。Optionally, the current amount of the preset process parameter is the current duration of the semiconductor process step, and the target process parameter value is the total duration required to complete the semiconductor process step.
作为本发明的第二个方面，提供一种半导体工艺设备，包括工艺腔室和进气组件，所述进气组件用于向所述工艺腔室提供气体，还包括控制器，所述控制器用于控制所述进气组件实现前面所述的控制方法。As a second aspect of the present invention, there is provided a semiconductor process equipment, comprising a process chamber and an air intake assembly, the air intake assembly is used for supplying gas to the process chamber, and a controller, the controller uses The aforementioned control method is implemented for controlling the air intake assembly.
本发明提供的半导体工艺的控制方法和半导体工艺设备的技术方案中，通过在进气工艺配方中设置至少一种进气控制参数(包括向工艺腔室提供工艺气体的流量和工艺腔室内的气体压强中的至少一者)，以及所有的进气控制参数中有至少一种所对应的预设工艺参数的变化量，并在执行半导体工艺步骤时，按关于该进气控制参数和该预设工艺参数的预设函数，控制与该预设函数对应的进气控制参数的大小随对应的预设工艺参数的变化而逐渐增加，可以使进气控制参数的大小实现缓慢而平滑的变化，从而可以在进气工艺步骤开始时实现缓释进气，提高工艺腔室内气流场的稳定性，避免晶圆位置出现偏移。In the semiconductor process control method and the technical solution of the semiconductor process equipment provided by the present invention, by setting at least one intake control parameter (including the flow rate of the process gas provided to the process chamber and the gas in the process chamber) in the intake process recipe at least one of the pressure), and the variation of the preset process parameter corresponding to at least one of all the air intake control parameters, and when the semiconductor process steps are executed, according to the air intake control parameter and the preset The preset function of the process parameter, which controls the size of the intake control parameter corresponding to the preset function to gradually increase with the change of the corresponding preset process parameter, so that the size of the intake control parameter can be changed slowly and smoothly, thereby Slow-release air intake can be realized at the beginning of the air intake process step, which improves the stability of the air flow field in the process chamber and avoids the offset of the wafer position.
并且在本发明中，上述进气控制参数的大小实现缓慢而平滑的变化，例 如向工艺腔室提供工艺气体的流量和工艺腔室内的气体压强中的至少一者逐渐增加，还可以在执行半导体工艺步骤时，使得沉积薄膜的成分变化更加平缓，使之与下层薄膜或基底的结合更牢固，膜层间的应力差距更小，从而可以提高薄膜质量。And in the present invention, the size of the above-mentioned gas inlet control parameters realizes a slow and smooth change, for example, at least one of the flow rate of the process gas provided to the process chamber and the gas pressure in the process chamber is gradually increased, and it is also possible to perform a semiconductor process. During the process steps, the composition of the deposited film changes more gently, so that the combination with the underlying film or the substrate is firmer, and the stress gap between the film layers is smaller, so that the film quality can be improved.
附图说明Description of drawings
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the specification, and together with the following specific embodiments, are used to explain the present invention, but do not constitute a limitation to the present invention. In the attached image:
图1是一种典型的半导体工艺设备中工艺腔室的结构示意图；1 is a schematic structural diagram of a process chamber in a typical semiconductor process equipment;
图2是晶圆被放置在基座上的位置示意图；Fig. 2 is the position schematic diagram that the wafer is placed on the base;
图3是晶圆发生滑片后的位置示意图；Figure 3 is a schematic diagram of the position of the wafer after the wafer has been slid;
图4是现有技术中薄膜生长情况的示意图；Fig. 4 is the schematic diagram of thin film growth situation in the prior art;
图5是采用本发明提供的控制方法的实施例中薄膜生长情况的示意图；Fig. 5 is the schematic diagram of the thin film growth situation in the embodiment of adopting the control method provided by the present invention;
图6是采用本发明实施例提供的控制方法的流程示意图；6 is a schematic flowchart of a control method provided by an embodiment of the present invention;
图7是采用本发明另一实施例提供的控制方法的流程示意图；7 is a schematic flowchart of a control method provided by another embodiment of the present invention;
图8是采用本发明又一实施例提供的控制方法的流程示意图；8 is a schematic flowchart of a control method provided by another embodiment of the present invention;
图9是采用本发明再一实施例提供的控制方法的流程示意图。FIG. 9 is a schematic flowchart of a control method provided by another embodiment of the present invention.
具体实施方式Detailed ways
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.
图1为典型的半导体工艺设备中工艺腔室的结构示意图。如图1所示，该工艺腔室包括：腔体1、基座2、匀气窗3、石英窗4、进气孔5。执行工艺时，机械手将晶圆6传入腔体1，并放置于基座2上，工艺气体由匀气窗3上方的进气孔5进入石英窗4与匀气窗3之间的匀气腔，然后通过匀气窗3 进入匀气窗3下方的工艺空间，使工艺气体充满整个工艺空间，从而使晶圆6置于工艺气体中。FIG. 1 is a schematic structural diagram of a process chamber in a typical semiconductor process equipment. As shown in FIG. 1 , the process chamber includes: a cavity 1 , a base 2 , a uniform air window 3 , a quartz window 4 , and an air inlet 5 . When the process is performed, the robot hand introduces the wafer 6 into the cavity 1 and places it on the base 2, and the process gas enters the homogeneous cavity between the quartz window 4 and the homogeneous window 3 through the air inlet 5 above the homogeneous window 3, Then enter the process space below the air distribution window 3 through the air distribution window 3, so that the process gas fills the entire process space, so that the wafer 6 is placed in the process gas.
通常，机械手将晶圆6传入腔体1并放置在基座2的正中间位置，该位置如图2所示。然而，由于CVD等半导体工艺中通常需要向工艺腔室中通入较大的工艺气体流量，且工艺腔室内需要使用较高的气体压强，通常情况下工艺气体流量高于1000sccm(Standard Cubic Centimeterper Minute，标准毫升每分钟)，气体压强大于100mtorr，在执行工艺时，大量的工艺气体通入到工艺腔室内极容易造成腔室内出现气流扰动，使晶圆6在气流作用下改变与基座2的相对位置，出现如图3所示的滑片问题。Usually, the robot hand transfers the wafer 6 into the cavity 1 and places it in the middle position of the base 2 , which is shown in FIG. 2 . However, in semiconductor processes such as CVD, it is usually necessary to pass a large flow of process gas into the process chamber, and a relatively high gas pressure needs to be used in the process chamber. Usually, the flow of process gas is higher than 1000sccm (Standard Cubic Centimeterper Minute , standard milliliters per minute), the gas pressure is greater than 100mtorr, when a large amount of process gas is introduced into the process chamber, it is very easy to cause airflow disturbance in the chamber, so that the wafer 6 and the base 2 are changed under the action of the airflow. Relative position, there is a sliding problem as shown in Figure 3.
例如，下述表1为一种现有半导体工艺采用的进气工艺配方，如表1所示，在工艺步骤名称(Step Name)为Gas-on的工艺步骤中，向工艺腔室通入的工艺气体为Ar，且Ar的流量为30000sccm，当然，在实际应用中，通入工艺腔室的工艺气体可能是Ar、N 2、O 2、C 2H 2等中的一种或多种)；腔室内的气体压强(Pressure)为6torr。按照此工艺配方，在Gas-on工艺步骤开始时，在短时间内向工艺腔室通入30000sccm流量的工艺气体，且在短时间内将腔室内的气体压强由Gas-on工艺步骤开始前的原始气体压强(该压强趋近0torr，例如为10-3torr)变为6torr，这会导致腔室内气流发生突变，并对基座上的晶圆带来扰动，从而产生滑片问题。 For example, the following table 1 is a gas inlet process formula adopted by an existing semiconductor process. As shown in table 1, in the process step whose process step name (Step Name) is Gas-on, the gas feeding into the process chamber The process gas is Ar, and the flow rate of Ar is 30000sccm. Of course, in practical applications, the process gas introduced into the process chamber may be one or more of Ar, N 2 , O 2 , C 2 H 2 , etc.) ; The gas pressure in the chamber (Pressure) is 6torr. According to this process recipe, at the beginning of the Gas-on process step, a process gas with a flow rate of 30000sccm is introduced into the process chamber in a short time, and the gas pressure in the chamber is changed from the original gas pressure before the start of the Gas-on process step in a short time. The gas pressure (which is close to 0torr, eg 10-3torr) changes to 6torr, which causes abrupt changes in the airflow in the chamber and disturbances to the wafer on the susceptor, resulting in a slider problem.
表1Table 1
Step Step 11 22
Step NameStep Name Ped-upPed-up Gas-onGas-on
Time/sTime/s 1.01.0 20.020.0
Ar/sccmAr/sccm 00 3000030000
PedPed UpUp UpUp
Press ModePress Mode FullOpenFullOpen PressurePressure
Pressure/torrPressure/torr 00 66
一旦晶圆6在腔室内发生滑片，一方面会影响晶圆6表面沉积薄膜的均匀性与薄膜的性能，另一方面也会影响工艺的执行，严重情况下可能会发生晶圆6与腔体1碰撞，产生颗粒或者碎片。另一方面也会给机械手在执行完工艺后从腔室内将晶圆6取出的过程造成影响，例如晶圆6与基座2分离时发生偏斜、机械手托取晶圆6时与晶圆6发生碰撞使晶圆碎裂、或者机械手成功托取晶圆6但在将晶圆6移出腔室时与腔体1发生碰撞使晶圆碎裂、又或者由于晶圆6滑动位置较大，机械手成功取片，但晶圆6由于偏移距离过大从机械手上掉落等，使得半导体工艺被迫中止，影响机台产能，并增加额外的维护成本。Once the wafer 6 slides in the chamber, on the one hand, it will affect the uniformity and performance of the film deposited on the surface of the wafer 6, and on the other hand, it will also affect the execution of the process. In severe cases, the wafer 6 and the cavity may occur. Body 1 collides, producing particles or fragments. On the other hand, it will also affect the process of the robot taking out the wafer 6 from the chamber after the process is performed. The collision causes the wafer to be broken, or the robot successfully picks up the wafer 6 but collides with the chamber 1 when the wafer 6 is moved out of the chamber, causing the wafer to be broken, or because the wafer 6 slides at a large position, the robot The wafer was successfully retrieved, but the wafer 6 was dropped from the robot due to the excessive offset distance, etc., which forced the semiconductor process to be suspended, which affected the machine productivity and increased additional maintenance costs.
并且，对于薄膜沉积、薄膜处理(如PVD、CVD、ALD等)工艺，待生长、处理的薄膜的成分通常与下层薄膜或基底成分相差较大，由于不同物质的物理化学性能相差较大，在快速生长得到薄膜的过程中，新生长的薄膜的成分与下层薄膜或基底的成分或性能差异过大极容易造成薄膜或整个晶圆产生应力弯曲，或者导致膜层之间结合力不强，产生剥层现象，影响薄膜沉积质量(如图4所示为表1所示的进气工艺配方对应的薄膜生长情况，以薄膜颜色深浅的程度差异来表示薄膜成分差异为例，新生长的薄膜的成分与下层薄膜或基底的成分的差异十分明显)。Moreover, for film deposition and film processing (such as PVD, CVD, ALD, etc.) processes, the composition of the film to be grown and treated is usually quite different from that of the underlying film or substrate. In the process of rapidly growing the film, the composition or properties of the newly grown film and the underlying film or substrate are too different to cause stress bending of the film or the entire wafer, or the bonding force between the film layers is not strong, resulting in The phenomenon of delamination affects the deposition quality of the film (Figure 4 shows the growth of the film corresponding to the intake process formula shown in Table 1, and the difference in the color depth of the film is used to represent the difference in film composition as an example. The composition differs significantly from that of the underlying film or substrate).
为解决上述技术问题，作为本发明的一个方面，提供一种半导体工艺的控制方法，应用于半导体工艺设备的进气组件，该进气组件用于向半导体工艺设备的工艺腔室提供气体，如图6所示，该控制方法包括：In order to solve the above-mentioned technical problems, as an aspect of the present invention, a method for controlling a semiconductor process is provided, which is applied to an air intake assembly of a semiconductor process equipment, and the air intake assembly is used to provide a gas to a process chamber of the semiconductor process equipment, such as As shown in Figure 6, the control method includes:
步骤S1、接收进气工艺配方，该进气工艺配方包括与半导体工艺步骤对应的至少一种进气控制参数，以及所有的进气控制参数中有至少一种所对应的预设工艺参数的变化量；对应有该预设工艺参数的变化量的进气控制参数还对应有关于该进气控制参数和该预设工艺参数的预设函数；进气控制参数的种类包括向工艺腔室提供工艺气体的流量和工艺腔室内的气体压强中的至 少一者；Step S1, receiving an air intake process recipe, the air intake process recipe includes at least one air intake control parameter corresponding to the semiconductor process step, and at least one of all the air intake control parameters corresponds to a change in a preset process parameter The intake control parameter corresponding to the variation of the preset process parameter also corresponds to a preset function related to the intake control parameter and the preset process parameter; the types of the intake control parameter include providing process to the process chamber at least one of the flow rate of the gas and the pressure of the gas within the process chamber;
在一些可选的实施例中，上述预设工艺参数包括半导体工艺步骤的时长(例如，工艺累计时长或者向工艺腔室提供工艺气体的累计时长)、工艺腔室的用于调节排气流量的流量调节阀(如蝶阀)的开度或者用于承载并加热晶圆的加热器的加热温度。当然，本发明实施例并不局限于此，在实际应用中，上述预设工艺参数还可以是其他能够反映上述流量和气体压强的变化进度，并能够实时获得的参照量。In some optional embodiments, the above-mentioned preset process parameters include the duration of the semiconductor process steps (for example, the accumulated duration of the process or the accumulated duration of supplying the process gas to the process chamber), the duration of the process chamber for adjusting the exhaust flow. The opening of a flow regulating valve (such as a butterfly valve) or the heating temperature of the heater used to carry and heat the wafer. Of course, the embodiment of the present invention is not limited to this. In practical applications, the above-mentioned preset process parameters may also be other reference quantities that can reflect the change progress of the above-mentioned flow rate and gas pressure and can be obtained in real time.
需要说明的是，上述预设工艺参数是变量，在执行半导体工艺步骤的过程中是变化的，上述预设工艺参数的大小由开始执行半导体工艺步骤之前的初始值，在执行执行半导体工艺步骤的过程中发生变化，直至达到最终值，该最终值与初始值的差值即为上述预设工艺参数的变化量。It should be noted that the above-mentioned preset process parameters are variables, which are changed during the execution of the semiconductor process steps. Changes occur during the process until the final value is reached, and the difference between the final value and the initial value is the change amount of the above-mentioned preset process parameters.
步骤S2、在执行半导体工艺步骤时，按上述预设函数控制与该预设函数对应的进气控制参数的大小随预设工艺参数的变化而逐渐增加，直至预设工艺参数达到上述变化量。Step S2: When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the preset process parameter according to the preset function, until the preset process parameter reaches the above-mentioned variation.
在一个具体的实施例中，进气工艺配方包括与半导体工艺步骤对应的两种进气控制参数，分别为上述流量F和气体压强P，该进气工艺配方还包括上述流量F对应的预设工艺参数x，该预设工艺参数x例如为半导体工艺步骤的时长t，对应有该预设工艺参数x的上述流量F还对应有关于流量F和预设工艺参数x的预设流量函数F＝f1(x)(即对应于流量F的预设函数)。和/或，上述进气工艺配方包括上述气体压强P对应的预设工艺参数x，该预设工艺参数x例如为半导体工艺步骤的时长t，对应有该预设工艺参数x的上述气体压强P还对应有关于气体压强P和预设工艺参数x的预设压强函数P＝f2(x)。In a specific embodiment, the intake process recipe includes two intake control parameters corresponding to the semiconductor process steps, which are the flow rate F and the gas pressure P, respectively, and the intake process recipe also includes a preset corresponding to the flow rate F. Process parameter x, the preset process parameter x is, for example, the duration t of the semiconductor process step, and the above-mentioned flow rate F corresponding to the preset process parameter x also corresponds to the preset flow rate function F= f1(x) (ie, the preset function corresponding to the flow F). And/or, the above-mentioned intake process recipe includes a preset process parameter x corresponding to the above-mentioned gas pressure P, the preset process parameter x is, for example, the duration t of the semiconductor process step, and the above-mentioned gas pressure P corresponding to the preset process parameter x It also corresponds to a preset pressure function P=f2(x) related to the gas pressure P and the preset process parameter x.
在执行Gas-on工艺步骤时，通过按预设流量函数F＝f1(x)控制上述流量F的大小，使之随预设工艺参数x的变化而逐渐增加，和/或，按预设压强函 数P＝f2(x)控制工艺腔室内的气体压强P的大小，使之随预设工艺参数x的变化而逐渐增加，可以在Gas-on工艺步骤开始时实现缓释进气和/或缓慢改变腔室内的气体压强，即，通入腔室的工艺气体的流量F在Gas-on工艺步骤执行过程中由小到大变化(起点优选为0sccm)，和/或，工艺腔室内的气体压强P由小到大变化，可以避免进气量在步骤间切换时发生突变并引起工艺腔室内的气流场突变，从而可以提高工艺腔室内气流场的稳定性，避免晶圆位置出现偏移，进而可以提高半导体工艺的安全性，在连续跑片的情况下，也能够保证半导体工艺设备的稳定运行。When performing the Gas-on process step, the size of the above-mentioned flow rate F is controlled according to the preset flow rate function F=f1(x), so that it gradually increases with the change of the preset process parameter x, and/or, according to the preset pressure The function P=f2(x) controls the size of the gas pressure P in the process chamber, so that it gradually increases with the change of the preset process parameter x, which can realize the slow release and/or slow release of the gas at the beginning of the Gas-on process step. Change the gas pressure in the chamber, that is, the flow rate F of the process gas introduced into the chamber changes from small to large during the execution of the Gas-on process step (the starting point is preferably 0 sccm), and/or, the gas pressure in the process chamber The change of P from small to large can avoid the sudden change of the intake air amount when switching between steps and cause the sudden change of the airflow field in the process chamber, thereby improving the stability of the airflow field in the process chamber, avoiding the deviation of the wafer position, and then The safety of the semiconductor process can be improved, and the stable operation of the semiconductor process equipment can also be ensured in the case of continuous wafer running.
并且，上述流量F和气体压强P中的至少一者实现缓慢而平滑的变化，还可以在执行半导体工艺步骤时，使得沉积薄膜的成分变化更加平缓，使之与下层薄膜或基底的结合更牢固，膜层间的应力差距更小，从而可以提高薄膜质量。如图5所示，采用本发明提供的控制方法沉积得到的薄膜，其沉积过程受工艺气体的流量F由小到大的缓慢而平滑的变化过程影响，以薄膜颜色深浅的程度差异来表示薄膜成分差异为例，薄膜成分呈明显的连续变化趋势，有效削减了薄膜之间成分差异导致的应力差异问题。In addition, at least one of the flow rate F and the gas pressure P can be changed slowly and smoothly, and the composition of the deposited film can be changed more gently when the semiconductor process steps are performed, so that the combination with the underlying film or the substrate is stronger. , the stress gap between the film layers is smaller, so that the film quality can be improved. As shown in FIG. 5 , the deposition process of the film deposited by the control method provided by the present invention is affected by the slow and smooth change process of the flow rate F of the process gas from small to large, and the film is represented by the difference in the degree of color depth of the film. Taking the composition difference as an example, the film composition shows an obvious continuous change trend, which effectively reduces the stress difference caused by the composition difference between the films.
为了进一步保证上述进气控制参数(例如上述流量F和气体压强P中的至少一者)变化的平稳性，优选地，上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)为连续函数。In order to further ensure the stability of changes in the above-mentioned intake control parameters (such as at least one of the above-mentioned flow F and gas pressure P), preferably, the above-mentioned preset functions (such as the preset flow function F=f1(x) and the preset At least one of the pressure functions P=f2(x)) is a continuous function.
为了进一步保证薄膜成分、性能的平滑过渡，进一步提高薄膜质量，减少工艺腔室内的气流扰动，优选地，上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)为连续可导函数。In order to further ensure smooth transition of film composition and performance, further improve film quality, and reduce airflow disturbance in the process chamber, preferably, the above preset functions (such as preset flow function F=f1(x) and preset pressure function P= At least one of f2(x)) is a continuously differentiable function.
需要说明的是，上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)可由实验开发人员预先实验确定，具体地，通过工艺应用预先模拟计算，随后通过实验结果校正，再反复修改模拟计算函数并重新验证，使得上述预设函数达到最佳工艺效果。It should be noted that, the above-mentioned preset function (for example, at least one of the preset flow function F=f1(x) and the preset pressure function P=f2(x)) can be determined in advance by the experiment developer, specifically, by The process should be simulated and calculated in advance, then corrected by the experimental results, and then the simulation calculation function will be modified repeatedly and re-verified, so that the above-mentioned preset function can achieve the best process effect.
本发明实施例对上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)的函数类型不做具体限定，例如，上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)可以为一元线性函数y＝ax+b；或者，在本发明的一些实施例中，上述预设函数(例如预设流量函数F＝f1(x)和预设压强函数P＝f2(x)中的至少一者)还可以是对数函数y＝log ax、幂指数函数y＝a x+b、二元函数y＝ax 2+bx+c、三元函数、抛物线方程等等。 This embodiment of the present invention does not specifically limit the function type of the foregoing preset function (for example, at least one of the preset flow function F=f1(x) and the preset pressure function P=f2(x)). The set function (eg, at least one of the preset flow function F=f1(x) and the preset pressure function P=f2(x)) may be a univariate linear function y=ax+b; or, in some implementations of the present invention In an example, the above-mentioned preset function (for example, at least one of the preset flow function F=f1(x) and the preset pressure function P=f2(x)) may also be a logarithmic function y=log a x, a power exponent Function y=a x +b, binary function y=ax 2 +bx+c, ternary function, parabolic equation, etc.
需要说明的是，进气工艺配方中与半导体工艺步骤对应的所有的进气控制参数中，可以有至少一种对应有预设工艺参数的变化量和预设函数，若有进气控制参数未对应有预设工艺参数的变化量和预设函数，则可以在执行所述半导体工艺步骤的过程中始终为定值，例如，若上述流量F和气体压强P中的一者对应有预设工艺参数的变化量和预设函数，而另一者未对应有预设工艺参数的变化量和预设函数，则另一者在执行所述半导体工艺步骤的过程中始终为定值。在这种情况下，上述进气工艺配方还包括与未对应有预设工艺参数和预设函数的进气控制参数对应的目标控制量；并且，上述控制方法还包括：It should be noted that, among all the intake control parameters corresponding to the semiconductor process steps in the intake process recipe, there may be at least one variation and preset function corresponding to the preset process parameters. Corresponding to the variation of the preset process parameters and the preset function, it can always be a fixed value during the process of executing the semiconductor process steps. For example, if one of the above-mentioned flow F and gas pressure P corresponds to a preset process The variation of the parameter and the preset function, and the other one does not correspond to the variation of the preset process parameter and the preset function, and the other is always a constant value during the execution of the semiconductor process steps. In this case, the above-mentioned intake process formula further includes a target control quantity corresponding to the intake control parameters not corresponding to the preset process parameters and preset functions; and, the above-mentioned control method further includes:
在半导体工艺步骤开始之前，将未对应有预设工艺参数和预设函数的进气控制参数的大小调整为与该进气控制参数对应的目标控制量，并在执行半导体工艺步骤时，将该进气控制参数的大小保持在与该进气控制参数对应的目标控制量不变。Before the semiconductor process step starts, the size of the intake control parameter that does not correspond to the preset process parameter and the preset function is adjusted to the target control amount corresponding to the intake control parameter, and when the semiconductor process step is performed, the size of the intake control parameter is adjusted. The magnitude of the intake air control parameter remains unchanged at the target control amount corresponding to the intake air control parameter.
也就是说，未对应有预设工艺参数和预设函数的进气控制参数的大小在执行半导体工艺步骤时为恒定值，该恒定值可在半导体工艺步骤开始前预先设置在进气工艺配方中。That is to say, the size of the intake control parameter that does not correspond to the preset process parameters and the preset function is a constant value when the semiconductor process step is performed, and the constant value can be preset in the intake process recipe before the semiconductor process step starts. .
在一个具体的实施例中，如图7所示，该控制方法包括：In a specific embodiment, as shown in FIG. 7 , the control method includes:
步骤S1、接收进气工艺配方，然后判断该进气工艺配方中的各种进气控 制参数是否对应有预设函数；若是，则进行步骤S2；若否，则进行步骤S3；Step S1, receive the air intake process formula, then judge whether various air intake control parameters in this air intake process formula correspond to a preset function; if so, proceed to step S2; if not, proceed to step S3;
步骤S2、在执行半导体工艺步骤时，按上述预设函数控制与该预设函数对应的进气控制参数的大小随预设工艺参数的变化而逐渐增加，直至预设工艺参数达到上述变化量。Step S2: When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the preset process parameter according to the preset function, until the preset process parameter reaches the above-mentioned variation.
上述进气工艺配方和步骤S2在前文中已有了详细描述，在此不再赘述。The above-mentioned intake process recipe and step S2 have been described in detail above, and will not be repeated here.
步骤S3、在半导体工艺步骤开始之前，将未对应有预设工艺参数和预设函数的进气控制参数的大小调整为与该进气控制参数对应的目标控制量，并在执行半导体工艺步骤时，将该进气控制参数的大小保持在与该进气控制参数对应的目标控制量不变。Step S3, before the semiconductor process step starts, adjust the size of the air intake control parameter that does not correspond to the preset process parameter and the preset function to the target control amount corresponding to the air intake control parameter, and when executing the semiconductor process step , the magnitude of the intake control parameter is kept constant at the target control amount corresponding to the intake control parameter.
为了确保反应彻底进行，优选地，进气工艺配方还包括与上述预设工艺参数对应的目标工艺参数值，如图8、图9所示，在图6或者图7所示的控制方法的基础上，该控制方法还包括：In order to ensure that the reaction is carried out thoroughly, preferably, the intake process recipe also includes target process parameter values corresponding to the above preset process parameters, as shown in FIG. 8 and FIG. 9 , on the basis of the control method shown in FIG. 6 or FIG. 7 , the control method further includes:
步骤S4、在预设工艺参数达到上述变化量之后，将与该预设工艺参数对应的进气控制参数的大小保持不变，直至该预设工艺参数达到目标工艺参数值。Step S4, after the preset process parameter reaches the above-mentioned variation, keep the size of the intake control parameter corresponding to the preset process parameter unchanged until the preset process parameter reaches the target process parameter value.
当预设工艺参数x为执行半导体工艺步骤的时长时，目标工艺参数值为完成该半导体工艺步骤所需的总时长。When the preset process parameter x is the duration for executing the semiconductor process step, the target process parameter value is the total duration required to complete the semiconductor process step.
为了减少工艺编写步骤、降低出错机率，优选地，该进气工艺配方可通过工艺配方表发送给进气组件，例如，下表2为本发明实施例中用于记载工艺配方的工艺配方表的一种实施方式，表格中预设工艺参数x采用进气时间(提供工艺气体的时间)t，工艺气体采用氩气(Ar)。In order to reduce the process writing steps and reduce the probability of errors, preferably, the air intake process formula can be sent to the air intake component through the process formula table. In one embodiment, the preset process parameter x in the table adopts the intake time (time for supplying the process gas) t, and the process gas adopts argon (Ar).
表2Table 2
Step Step 11 22
Step NameStep Name Ped-upPed-up Ga-sonGa-son
Time/sTime/s t 1 t 1 t 2 t 2
Gason Duration TimeGason Duration Time 0.00.0 t 3 t 3
Ar/sccm(以Ar气为例)Ar/sccm (take Ar gas as an example) F 1 F1 F 2 F2
PedPed UpUp UpUp
Press ModePress Mode FullOpenFullOpen PressurePressure
Pressure/torrPressure/torr P 1 P 1 P 2 P 2
Pressure Reach TimePressure Reach Time 0.00.0 t 4 t 4
如表2所示，工艺步骤名称(Step Name)为Ped-up的工艺步骤，其用于进气准备，Ped-up的工艺步骤持续一较短时间t 1，进气组件以流量F 1(可为零)向工艺腔室提供工艺气体，待晶圆安放在托盘上后，进气组件可在气体进入持续时间(Gason Duration Time)t 3(即预设工艺参数的变化量)内按预设流量函数F＝f1(x)随进气时间t的变化逐渐增加进气流量F，直至进气时间t达到气体进入持续时间t 3(此时进气流量F达到目标流量值F 2)。随后，在进气时间t达到工艺配方中给出的目标进气时间t 2(即目标工艺参数值)前的(t 2-t 3)时间内，将进气流量F保持在目标流量值F 2。 As shown in Table 2, the process step name (Step Name) is the process step of Ped-up, which is used for air intake preparation, and the process step of Ped-up lasts for a short time t 1 , and the air intake assembly is operated at a flow rate F 1 ( It can be zero) to provide process gas to the process chamber. After the wafer is placed on the tray, the gas inlet component can enter the gas in the duration (Gason Duration Time) t 3 (that is, the variation of the preset process parameters). Let the flow function F=f1(x) gradually increase the intake flow F with the change of the intake time t until the intake time t reaches the gas entry duration t 3 (at this time the intake flow F reaches the target flow value F 2 ). Subsequently, the intake air flow F is maintained at the target flow value F within the time (t 2 -t 3 ) before the intake air time t reaches the target intake air time t 2 (ie, the target process parameter value) given in the process recipe. 2 .
在Ped-up的工艺步骤中，进气组件为FullOpen模式，即，工艺腔室的用于调节排气流量的流量调节阀(如蝶阀)的开度为最大开度，此时不向工艺腔室加压，待晶圆安放在托盘上后，在Gas-on的工艺步骤中，进气组件可在规定压力到达时间(Pressure Reach Time)t 4(即预设工艺参数变化量)内按预设压强函数P＝f2(x)随进气时间t的变化逐渐增加工艺腔室内的气体压强P，直至进气时间t达到规定压力到达时间t 4(此时气体压强P达到目标压强值P 2)。随后，在进气时间t达到工艺配方中给出的目标进气时间t 2前的(t 2-t 4)时间内，将进气流量P保持在目标压强值P 2。 In the process step of Ped-up, the air intake assembly is in the FullOpen mode, that is, the opening of the flow regulating valve (such as a butterfly valve) used to adjust the exhaust flow in the process chamber is the maximum opening degree, and the process chamber is not opened at this time. After the wafer is placed on the tray, in the Gas-on process step, the air intake assembly can be pre-pressed within the specified Pressure Reach Time t 4 (ie, the preset process parameter variation). Let the pressure function P=f2(x) gradually increase the gas pressure P in the process chamber with the change of the intake time t, until the intake time t reaches the specified pressure reaching time t 4 (at this time, the gas pressure P reaches the target pressure value P 2 ). Subsequently, the intake air flow rate P is maintained at the target pressure value P 2 within the time (t 2 -t 4 ) before the intake air time t reaches the target intake air time t 2 given in the process recipe.
为便于本领域技术人员理解，本发明还提供一种上述工艺配方表的具体实施方式，如下述表3所示，在此实施方式中预设流量函数F＝f1(x)＝3000t，即进气流量F为时间t的一次函数，气体压强P未对应有预设压强函数。在 向进气组件提供的工艺配方中设置t 1＝1.0s，t 2＝20.0s，t 3＝10.0s，t 4＝0.0s，F 1＝0sccm，F 2＝30000sccm，P 1＝0torr，P 2＝6.0torr。 In order to facilitate the understanding of those skilled in the art, the present invention also provides a specific embodiment of the above-mentioned process formula table, as shown in Table 3 below, in this embodiment, the preset flow function F=f1(x)=3000t, that is, the The gas flow F is a linear function of the time t, and the gas pressure P does not correspond to a preset pressure function. In the process recipe provided to the air intake assembly, set t 1 =1.0s, t 2 =20.0s, t 3 =10.0s, t 4 =0.0s, F 1 =0sccm, F 2 =30000sccm, P 1 =0torr, P 2 =6.0torr.
表3table 3
Step Step 11 22
Step NameStep Name Ped-upPed-up GasonGason
Time/sTime/s 1.01.0 20.020.0
Gason Duration TimeGason Duration Time 0.00.0 10.010.0
Ar/sccm(以Ar气为例)Ar/sccm (take Ar gas as an example) 00 3000030000
PedPed UpUp UpUp
Press ModePress Mode FullOpenFullOpen PressurePressure
Pressure/torrPressure/torr 00 66
Pressure Reach TimePressure Reach Time 0.00.0 0.00.0
按此工艺配方执行工艺时，进气组件自动通过闭环控制气流的大小与蝶阀的开度变化，使工艺气体的进气流量F在目标进气时间(Gason Duration Time)10.0s内遵循气体流量函数F＝f1(x)＝3000t随时间逐渐变化，在10秒内由0sccm逐渐增加到30000sccm，在进气流量F达到目标流量值F 2后的t 2-t 3＝10.0s的时间内腔室内进气流量F维持在30000sccm不变。同时，气体压强P未对应有预设压强函数，规定压力到达时间t 4为0，工艺腔室内的气体压强P在半导体工艺步骤开始前先升至6torr，随后在进行半导体工艺步骤的过程中保持在6torr稳定不变。 When the process is carried out according to this process recipe, the intake component automatically controls the size of the airflow and the opening of the butterfly valve through a closed loop, so that the intake flow F of the process gas follows the gas flow function within the target intake time (Gason Duration Time) of 10.0s. F=f1(x)=3000t gradually changes with time, and gradually increases from 0sccm to 30000sccm within 10 seconds. After the intake air flow F reaches the target flow value F 2 , t 2 -t 3 =10.0s in the chamber The intake air flow F remains unchanged at 30000sccm. At the same time, the gas pressure P does not correspond to a preset pressure function, and the specified pressure arrival time t 4 is 0. The gas pressure P in the process chamber first rises to 6 torr before the semiconductor process step starts, and then remains during the semiconductor process step. Stable on 6torr.
作为本发明的第二个方面，提供一种半导体工艺设备，包括工艺腔室、进气组件和控制器，其中，该进气组件用于向工艺腔室提供气体；该控制器用于控制进气组件实现本发明实施例提供的上述控制方法。As a second aspect of the present invention, a semiconductor process equipment is provided, comprising a process chamber, an air intake assembly and a controller, wherein the air intake assembly is used for providing gas to the process chamber; the controller is used for controlling the air intake The component implements the foregoing control method provided by the embodiment of the present invention.
综上所述，本发明实施例提供的半导体工艺的控制方法和半导体工艺设备的技术方案中，通过在进气工艺配方中设置至少一种进气控制参数(包括向工艺腔室提供工艺气体的流量和工艺腔室内的气体压强中的至少一者)，以及所有的进气控制参数中有至少一种所对应的预设工艺参数的变化量，并在 执行半导体工艺步骤时，按关于该进气控制参数和该预设工艺参数的预设函数，控制与该预设函数对应的进气控制参数的大小随对应的预设工艺参数的变化而逐渐增加，可以使进气控制参数的大小实现缓慢而平滑的变化，从而可以在进气工艺步骤开始时实现缓释进气，提高工艺腔室内气流场的稳定性，避免晶圆位置出现偏移。To sum up, in the semiconductor process control method and the technical solution of the semiconductor process equipment provided by the embodiments of the present invention, at least one air intake control parameter (including the control of supplying process gas to the process chamber) is set in the air intake process recipe. at least one of the flow rate and the gas pressure in the process chamber), and the variation of the preset process parameters corresponding to at least one of all the gas inlet control parameters, and when performing the semiconductor process steps, according to the process The air control parameter and the preset function of the preset process parameter are controlled, and the size of the intake control parameter corresponding to the preset function is controlled to gradually increase with the change of the corresponding preset process parameter, so that the size of the intake control parameter can be realized. The slow and smooth change allows for a slow release of the gas inlet at the beginning of the gas inlet process step, improving the stability of the gas flow field in the process chamber and avoiding the offset of the wafer position.
并且在本发明中，上述进气控制参数的大小实现缓慢而平滑的变化，例如向工艺腔室提供工艺气体的流量和工艺腔室内的气体压强中的至少一者逐渐增加，还可以在执行半导体工艺步骤时，使得沉积薄膜的成分变化更加平缓，使之与下层薄膜或基底的结合更牢固，膜层间的应力差距更小，从而可以提高薄膜质量。And in the present invention, the size of the above-mentioned gas inlet control parameters realizes a slow and smooth change, for example, at least one of the flow rate of the process gas provided to the process chamber and the gas pressure in the process chamber is gradually increased, and it is also possible to perform a semiconductor process. During the process steps, the composition of the deposited film changes more gently, so that the combination with the underlying film or the substrate is firmer, and the stress gap between the film layers is smaller, so that the film quality can be improved.
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, without departing from the spirit and essence of the present invention, various modifications and improvements can be made, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (10)

  1. 一种半导体工艺的控制方法，应用于半导体工艺设备的进气组件，所述进气组件用于向半导体工艺设备的工艺腔室提供气体，其特征在于，所述控制方法包括：A control method for a semiconductor process, applied to an air intake assembly of a semiconductor process equipment, the air intake assembly is used to provide gas to a process chamber of the semiconductor process equipment, characterized in that the control method comprises:
    接收进气工艺配方，所述进气工艺配方包括与半导体工艺步骤对应的至少一种进气控制参数，以及所有的所述进气控制参数中有至少一种所对应的预设工艺参数的变化量；对应有所述预设工艺参数的变化量的所述进气控制参数还对应有关于该进气控制参数和该预设工艺参数的预设函数；所述进气控制参数的种类包括向所述工艺腔室提供工艺气体的流量和所述工艺腔室内的气体压强中的至少一者；Receive an air intake process recipe, the air intake process recipe includes at least one air intake control parameter corresponding to a semiconductor process step, and at least one of all the air intake control parameters corresponds to a change in a preset process parameter The intake control parameter corresponding to the variation of the preset process parameter also corresponds to a preset function related to the intake control parameter and the preset process parameter; the types of the intake control parameter include the process chamber provides at least one of a flow of process gas and a gas pressure within the process chamber;
    在执行所述半导体工艺步骤时，按所述预设函数控制与该预设函数对应的所述进气控制参数的大小随对应的所述预设工艺参数的变化而逐渐增加，直至该预设工艺参数达到所述变化量。When executing the semiconductor process step, the size of the intake control parameter corresponding to the preset function is controlled according to the preset function to gradually increase with the change of the corresponding preset process parameter, until the preset function is The process parameters reach the stated variation.
  2. 根据权利要求1所述的控制方法，其特征在于，所有的所述进气控制参数中有至少一种未对应有所述预设工艺参数和所述预设函数；所述进气工艺配方还包括与未对应有所述预设工艺参数和所述预设函数的所述进气控制参数对应的目标控制量；所述控制方法还包括：The control method according to claim 1, wherein at least one of all the air intake control parameters does not correspond to the preset process parameter and the preset function; the air intake process formula is further Including the target control amount corresponding to the air intake control parameter not corresponding to the preset process parameter and the preset function; the control method further includes:
    在所述半导体工艺步骤开始之前，将未对应有所述预设工艺参数和所述预设函数的所述进气控制参数的大小调整为与该进气控制参数对应的所述目标控制量，并在执行所述半导体工艺步骤时，将所述进气控制参数的大小保持在与该进气控制参数对应的所述目标控制量不变。Before the start of the semiconductor process step, the size of the intake control parameter not corresponding to the preset process parameter and the preset function is adjusted to the target control amount corresponding to the intake control parameter, And when the semiconductor process steps are executed, the magnitude of the intake air control parameter is kept unchanged at the target control amount corresponding to the intake air control parameter.
  3. 根据权利要求2所述的控制方法，其特征在于，所述进气控制参数包括向所述工艺腔室提供工艺气体的流量和所述工艺腔室内的气体压强；所述流量对应有所述预设工艺参数的变化量和所述预设函数；所述气体压强未 对应有所述预设工艺参数和所述预设函数，而对应有所述目标控制量。The control method according to claim 2, wherein the air inlet control parameters include a flow rate of the process gas provided to the process chamber and a gas pressure in the process chamber; the flow rate corresponds to the preset The variation of the process parameter and the preset function are set; the gas pressure does not correspond to the preset process parameter and the preset function, but corresponds to the target control amount.
  4. 根据权利要求1所述的控制方法，其特征在于，所述预设工艺参数包括执行所述半导体工艺步骤的时长、所述工艺腔室的用于调节排气流量的流量调节阀的开度或者用于承载并加热晶圆的加热器的加热温度。The control method according to claim 1, wherein the preset process parameters include a duration of executing the semiconductor process steps, an opening of a flow control valve of the process chamber for adjusting the exhaust flow, or The heating temperature of the heater used to carry and heat the wafer.
  5. 根据权利要求1所述的控制方法，其特征在于，所述预设函数为连续函数。The control method according to claim 1, wherein the preset function is a continuous function.
  6. 根据权利要求5所述的控制方法，其特征在于，所述预设函数为连续可导函数。The control method according to claim 5, wherein the preset function is a continuously differentiable function.
  7. 根据权利要求6所述的控制方法，其特征在于，所述预设函数为一元线性函数、对数函数、幂指数函数、二元函数、三元函数或抛物线方程。The control method according to claim 6, wherein the preset function is a linear function of one variable, a logarithmic function, a power exponential function, a binary function, a ternary function or a parabolic equation.
  8. 根据权利要求1至7中任意一项所述的控制方法，其特征在于，所述进气工艺配方还包括与所述预设工艺参数对应的目标工艺参数值，所述控制方法还包括：The control method according to any one of claims 1 to 7, wherein the intake air process recipe further includes a target process parameter value corresponding to the preset process parameter, and the control method further includes:
    在所述预设工艺参数达到所述变化量之后，将与该预设工艺参数对应的所述进气控制参数的大小保持不变，直至所述预设工艺参数达到所述目标工艺参数值。After the preset process parameter reaches the change amount, the size of the intake control parameter corresponding to the preset process parameter is kept unchanged until the preset process parameter reaches the target process parameter value.
  9. 根据权利要求8所述的控制方法，其特征在于，所述预设工艺参数的当前量为所述半导体工艺步骤当前已执行的时长，所述目标工艺参数值为完成所述半导体工艺步骤所需的总时长。8. The control method according to claim 8, wherein the current amount of the preset process parameter is the duration of the current execution of the semiconductor process step, and the target process parameter value is required to complete the semiconductor process step total duration.
  10. 一种半导体工艺设备，包括工艺腔室和进气组件，所述进气组件用 于向所述工艺腔室提供气体，其特征在于，还包括控制器，所述控制器用于控制所述进气组件实现权利要求1至9中任意一项所述的控制方法。A semiconductor process equipment, comprising a process chamber and an air intake assembly, the air intake assembly is used for supplying gas to the process chamber, and it is characterized in that it further comprises a controller, the controller is used for controlling the air intake The component implements the control method of any one of claims 1 to 9.
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