CN101877302B - Method for vacuumizing cavity - Google Patents
Method for vacuumizing cavity Download PDFInfo
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- CN101877302B CN101877302B CN2009101369597A CN200910136959A CN101877302B CN 101877302 B CN101877302 B CN 101877302B CN 2009101369597 A CN2009101369597 A CN 2009101369597A CN 200910136959 A CN200910136959 A CN 200910136959A CN 101877302 B CN101877302 B CN 101877302B
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Abstract
The invention relates to a method for vacuumizing a semiconductor process thin film deposition cavity, which comprises the following steps of: providing a semiconductor process thin film deposition cavity, carrying out air exhaust on the semiconductor process thin film deposition cavity by using a low vacuum pump, carrying out second stage air exhaust by using a high vacuum pump to adjust a baffle plate to block a wafer, heating an air absorbing material in a crucible by using a heater to generate steam used for capturing residual gas in the cavity to form a compound, deposing the compound on the baffle plate until reaching the target vacuum degree, stopping heating the air absorbing material, and opening the adjustable baffle plate for carrying out the next procedure.
Description
Technical field
The invention relates to a kind of method that the manufacture of semiconductor deposition chamber is vacuumized, be meant especially with the method for heated getter material production steam in order to adsorption gas molecule.
Background technology
In general semiconductor or thin film manufacture process, must under the environment of a higher vacuum, carry out, allow the interior vacuum degree of deposition chamber acquire a certain degree (about 10 usually earlier
-5Torr is following), just can proceed the subsequent thin film deposition manufacture process.Be common technique and utilize vacuum equipment to reach this demand.No matter thin film manufacture process now is to utilize CVD (chemical vapour deposition technique) or utilize PVD (physical vaporous deposition) all must use vacuum equipment.
Vacuum degree in the cavity is evacuated to high vacuum (10 by an atmospheric pressure (760torr)
-3～10
-5Torr) being divided into two stages usually bleeds, at first, use as: mechanical pump (mechanical pump), dry pump (dry pump) or at present the roughing pump used always of manufacturer, earlier vacuum degree is evacuated to about 0.2torr by an atmospheric pressure, utilize again as: refrigerating water pump (cryo pump) or continuation such as turbomolecular pump (turbo pump) high-vacuum pump of etc.ing are evacuated to 10 with vacuum degree by 0.2torr
-5The condition of high vacuum degree that torr is following.
When one base material is put into vacuum equipment work deposition, need just can put into this base material with after the cavity vacuum breaker, when opening cavity, its inner can directly contact with atmosphere, aqueous vapor in the atmosphere is adsorbed in the chamber wall after entering into cavity easily, and after being extracted into 0.2torr, the gas of chamber wall absorption disengages, along with the past more decline meeting of pressure is serious more, therefore 10
-3Below the torr, main gas load is from the surperficial outgas of inside cavity, so be adsorbed in the aqueous vapor and the oxygen of chamber wall surface when vacuum breaker at the beginning, is when being evacuated to high vacuum, makes one of reason that the speed of exhaust reduces.Comparatively the vaccum-pumping equipment of high-order is to add that additionally a cushion chamber (buffer chamber) is to separate main deposition chamber, base material is placed cushion chamber earlier, be evacuated to after a certain predetermined value, again base material is sent to continue to be evacuated in the main deposition chamber and carries out evaporation after the predetermined vacuum level again, the major sedimentary cavity does not directly contact atmosphere, and being evacuated to high vacuum, relatively not have a deposition chamber of cushion chamber more or less freely.
For not having for the deposition chamber of cushion chamber (buffer chamber), vacuum is time-consuming, directly influences the product production capacity.Therefore, how saving the pumpdown time is a key issue.Existing improvement mode is the power of increasing pump (pump), yet this mode can increase cost, and effect is not remarkable.
Summary of the invention
The invention provides the method that a kind of semiconductor process thin film deposition cavity vacuumizes, it can reduce the time that vacuum degree is evacuated to high vacuum by an atmospheric pressure not using under the situation that strengthens pump (pump) power.
Technical solution of the present invention is: the method that a kind of semiconductor process thin film deposition cavity vacuumizes, and this method may further comprise the steps:
The semiconductor process thin film deposition cavity is provided, this manufacture of semiconductor thin film deposition cavity connects a roughing pump and a high-vacuum pump so that this manufacture of semiconductor thin film deposition cavity is bled, this manufacture of semiconductor thin film deposition cavity is provided with a silicon wafer bearing disk to carry several pieces wafers, one scalable plate washer, the crucible of at least one carrying gettering material, and a heater;
With this roughing pump this manufacture of semiconductor thin film deposition cavity is carried out the phase I and bleed, up to reaching one first predeterminated target vacuum degree;
Carry out second stage with this high-vacuum pump and be pumped to and reach one second predeterminated target vacuum degree, at this moment, this scalable plate washer blocks this wafer;
Continuation is carried out the phase III with this high-vacuum pump and is bled, and simultaneously, with this heater this gettering material heating is produced steam, to catch the residual gas in this manufacture of semiconductor thin film deposition cavity, until reaching ultimate aim vacuum degree;
Close this heater to this gettering material heating; And
Open this scalable plate washer, carry out the manufacture of semiconductor deposition of described wafer.
The method that aforesaid semiconductor process thin film deposition cavity vacuumizes, wherein this manufacture of semiconductor thin film deposition cavity is an electron gun evaporation cavity, also comprise several crucibles, with carrying several purpose metal derbies except this gettering material, to originate as depositing metal layers.
The method that aforesaid semiconductor process thin film deposition cavity vacuumizes, wherein after opening this scalable plate washer, also comprise a step: open this heater again with to the heating of this purpose metal derby, wherein this heater is wherein a kind of of electron gun, filament or heating plate.
The aforesaid method that the manufacture of semiconductor deposition chamber is vacuumized, wherein this gettering material is a titanium piece.
The aforesaid method that the manufacture of semiconductor deposition chamber is vacuumized, the first wherein above-mentioned predeterminated target vacuum degree is about 0.1 to 10
-2Torr.
The aforesaid method that the manufacture of semiconductor deposition chamber is vacuumized, the second wherein above-mentioned predeterminated target vacuum degree is about 9 * 10
-4To 1 * 10
-5Torr.
The aforesaid method that the manufacture of semiconductor deposition chamber is vacuumized, wherein above-mentioned predeterminated target vacuum degree is about 9 * 10
-6To 1 * 10
-7Torr.
The present invention also proposes the another kind of method that deposition chamber is vacuumized, and this method may further comprise the steps:
One deposition chamber is provided, and at least one vacuum pump is connected with this deposition chamber, comprises a crucible in this deposition chamber, and this crucible is placed a gettering material, and a heater is in order to heat this gettering material;
Utilize this vacuum pump that this cavity is carried out being pumped to 9 * 10 the first time
-4～1 * 10
-5Torr;
Utilize this vacuum pump that this cavity is carried out bleeding the second time, simultaneously this gettering material in this crucible is heated to molten state with this heater, make this gettering material produce steam in this cavity,, the gas molecule in this deposition chamber is reduced fast in order to catch residual gas molecule; And
When this vacuum pump is evacuated to a ultimate aim vacuum degree with the vacuum degree of this deposition chamber, stop to heat this gettering material.
The aforesaid method that deposition chamber is vacuumized, wherein above-mentioned ultimate predeterminated target vacuum degree is about 9 * 10
-6To 1 * 10
-7Torr.
The aforesaid method that deposition chamber is vacuumized, wherein this gettering material is a titanium piece.
Characteristics of the present invention and advantage are: the method that semiconductor process thin film deposition cavity of the present invention vacuumizes, be when the aspiration pump semiconductor process thin film deposition cavity is bled, simultaneously gettering material is heated, make it produce gas molecule, this gas molecule is adsorbable by the aqueous vapor of chamber wall effusion and aqueous vapor and the oxygen in the script atmosphere, reduce the purpose of pressure fast, reach the purpose of saving the pumpdown time.
Utilize the present invention significantly to reduce the time that vacuumizes, with embodiments of the invention, cavity is a column type, and the size of this cavity is height 900mm, diameter 750mm, that is volume to be about 4 * 108mm2 be example.Originally vacuum degree is evacuated to 3 * 10-6torr by an atmospheric pressure and need spends about 60 minutes, wherein vacuum degree is evacuated to 3 * 10-6torr by 10-5torr and just need spends about 36 minutes, and after utilizing method of the present invention, vacuum degree is evacuated to 3 * 10-6torr by 10-5torr only need spends 6 minutes, also being about to volume is about 4 * 108mm2 and is evacuated to 3 * 10-6torr by an atmospheric pressure and only need spends 30 minutes altogether, save the halfhour approximately time, in the identical time, can increase the production capacity of manufacture of semiconductor.
Description of drawings
Fig. 1 shows semiconductor process thin film deposition cavity vacuumizing device provided by the present invention.
[primary clustering symbol description]
Manufacture of semiconductor thin film deposition cavity 10 plummers 100
Crucible 101-103 gettering material 1020
Silicon wafer bearing disk 105 wafers 106
First control valve, 13 second control valves 14
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the detailed description of following cooperation preferred embodiment with reference to the accompanying drawings, can clearly present.
The invention provides the method that a kind of semiconductor process thin film deposition cavity vacuumizes, can save the time that cavity is vacuumized.Figure 1 shows that one embodiment of the invention application, semiconductor process thin film deposition cavity 10 at first is provided, in cavity 10, has a plummer 100, in order to carry several crucibles (crucible) 101～103, wherein place a gettering material 1020 in the crucible (crucible) 102, this gettering material is a titanium piece in embodiments of the present invention, gettering material 1020 is produced steam by a heater 104 heating in pumping process, to catch residual gas molecule in the cavity, and heater 104 can be an electron gun, or filament and heating plate, this heater is an electron gun in the embodiment of the invention.Other crucible 101,103 (crucible) then carries several purpose metal derbies 1010,1030 except gettering material 1020, originates as depositing metal layers.
Also comprise a silicon wafer bearing disk 105 in the manufacture of semiconductor thin film deposition cavity 10, silicon wafer bearing disk 105 can be placed several pieces wafers 106, and a scalable plate washer (shutter) 107 is arranged.
In addition, one roughing pump 11 is connected in manufacture of semiconductor thin film deposition cavity 10, also there is one first control valve 13 centre in order to control being communicated with of 10 gases of roughing pump 13 and manufacture of semiconductor thin film deposition cavity, and roughing pump 11 can be evacuated to about 10 by an atmospheric pressure (about 760torr) with vacuum degree
-2～10
-3Torr, this roughing pump 11 can be wherein a kind of of mechanical pump (mechanical pump) or dry pump (dry pump).Other has a high-vacuum pump 12 to be connected in this manufacture of semiconductor thin film deposition cavity 10, and controls being communicated with of 10 gases of high-vacuum pumps 12 and cavity with one second control valve 14, and high-vacuum pump 12 can be with vacuum degree by about 10
-2～10
-3Torr is evacuated to about 10
-6～10
-7Torr, high-vacuum pump 12 can be refrigerating water pump (cryo pump).
Processing procedure in the embodiment of the invention is film-plating process in batches, therefore must be earlier with manufacture of semiconductor thin film deposition cavity 10 vacuum breakers, several pieces wafers 106 are positioned over after this silicon wafer bearing disk 105, and carry out following steps again, comprising:
First control valve 13 is opened, and second control valve 14 is shut, and makes roughing pump 11 semiconductor process thin film deposition cavity 10 carry out the phase I and bleeds, until the pressure in this manufacture of semiconductor thin film deposition cavity 10 slightly is evacuated to about 0.1～10
-2About torr.
Then, first control valve 13 is shut, second control valve 14 is opened, and makes high-vacuum pump 12 semiconductor process thin film deposition cavity 10 carry out second stage and bleeds, until the pressure in the manufacture of semiconductor thin film deposition cavity 10 is evacuated to 9 * 10
-4～1 * 10
-5About torr, at this moment, scalable plate washer 107 blocks this silicon wafer bearing disk 105, in case the steam that produces when heated getter material 1020 pollutes this wafer 106; Continuation is carried out the phase III with high-vacuum pump 12 semiconductor process thin film deposition cavity 10 and is bled, simultaneously, heat and make gettering material 1020 produce steams with the gettering materials 1020 in 104 pairs of crucibles of heater 102, because the adsorbable aqueous vapor of disengaging of steam of gettering material by the chamber wall, and manufacture of semiconductor thin film deposition cavity 10 interior remaining aqueous vapor and oxygen, and then reach the purpose of saving the pumpdown time.
At last, be evacuated to 9 * 10 when vacuum degree
-6～1 * 10
-7After the torr, heater 104 cuts out, will open scalable plate washer 107, can carry out the manufacture of semiconductor deposition of wafer, can vacuum breaker be taken out by wafer after the cooling.
For film-plating process in batches, after each processing procedure is finished, promptly need carrying out same process by hyperphoric next group wafer after the deposition chamber vacuum breaker, therefore, need to repeat vacuum breaker and vacuumize again, quite time-consuming.The invention of this case can effectively reduce the pumpdown time.With most preferred embodiment of the present invention is example, and the cavity volume size is about 4 * 10 in the present embodiment
8Mm
2Originally vacuum degree is evacuated to 3 * 10 by an atmospheric pressure
-6Torr need spend about 60 minutes, wherein with vacuum degree by 10
-5Torr is evacuated to 3 * 10
-6Torr just need spend about 36 minutes, and in processing procedure of the present invention, arrives 10 in vacuum degree
-5Torr begins to heat the titanium piece, finds vacuum degree by 10
-5Torr is evacuated to 3 * 10
-6Torr only need spend 6 minutes, also is about to volume and is about 4 * 10
8Mm
2Be evacuated to 3 * 10 by an atmospheric pressure
-6Torr only need spend 30 minutes altogether, can save the halfhour time.And the heated getter material makes its generation steam catch gas molecule in cavity, to reach the purpose that acceleration vacuumizes, also applicable to the deposition chamber with cushion chamber (buffer chamber).
Sum up the above, the present invention can reduce the pumpdown time, and reduction processing procedure institute is time-consuming, increase the production capacity of product, and method is easy, does not need to make change or buy more equipment on process apparatus.The vapor deposition cavity of using because of general processing procedure just has several crucibles originally, only a crucible wherein need be put into gettering material.Wherein heated getter material production steam then can utilize the heater that script equipment has.
Above accompanying drawing and explanation only are preferred embodiment of the present invention, and it is not in order to limiting practical range of the present invention, anyly have the knack of the modification slightly that this skill person makes according to spirit of the present invention, must belong to spirit of the present invention and scope.
Claims (10)
1. method that semiconductor process thin film deposition cavity vacuumizes, this method may further comprise the steps:
The semiconductor process thin film deposition cavity is provided, this manufacture of semiconductor thin film deposition cavity connects a roughing pump and a high-vacuum pump so that this manufacture of semiconductor thin film deposition cavity is bled, this manufacture of semiconductor thin film deposition cavity is provided with a silicon wafer bearing disk to carry several pieces wafers, one scalable plate washer, the crucible of at least one carrying gettering material, and a heater;
With this roughing pump this manufacture of semiconductor thin film deposition cavity is carried out the phase I and bleed, up to reaching one first predeterminated target vacuum degree;
Carry out second stage with this high-vacuum pump and be pumped to and reach one second predeterminated target vacuum degree, at this moment, this scalable plate washer blocks this wafer;
Continuation is carried out the phase III with this high-vacuum pump and is bled, and simultaneously, with this heater this gettering material heating is produced steam, to catch the residual gas in this manufacture of semiconductor thin film deposition cavity, until reaching ultimate aim vacuum degree;
Close this heater to this gettering material heating; And
Open this scalable plate washer, carry out the manufacture of semiconductor deposition of described wafer.
2. the method that semiconductor process thin film deposition cavity as claimed in claim 1 vacuumizes, wherein this manufacture of semiconductor thin film deposition cavity is an electron gun evaporation cavity, also comprise several crucibles, with carrying several purpose metal derbies except this gettering material, to originate as depositing metal layers.
3. the method that semiconductor process thin film deposition cavity as claimed in claim 1 vacuumizes, wherein after opening this scalable plate washer, also comprise a step: open this heater again with to the heating of this purpose metal derby, wherein this heater is wherein a kind of of electron gun, filament or heating plate.
4. the method that the manufacture of semiconductor deposition chamber is vacuumized as claimed in claim 1, wherein this gettering material is a titanium piece.
5. the method that the manufacture of semiconductor deposition chamber is vacuumized as claimed in claim 1, the first wherein above-mentioned predeterminated target vacuum degree is 0.1 to 10
-2Torr.
6. the method that the manufacture of semiconductor deposition chamber is vacuumized as claimed in claim 1, the second wherein above-mentioned predeterminated target vacuum degree is 9 * 10
-4To 1 * 10
-5Torr.
7. the method that the manufacture of semiconductor deposition chamber is vacuumized as claimed in claim 1, wherein above-mentioned predeterminated target vacuum degree is 9 * 10
-6To 1 * 10
-7Torr.
8. method that deposition chamber is vacuumized, this method may further comprise the steps:
One deposition chamber is provided, and at least one vacuum pump is connected with this deposition chamber, comprises a crucible in this deposition chamber, and this crucible is placed a gettering material, and a heater is in order to heat this gettering material;
Utilize this vacuum pump that this cavity is carried out being pumped to 9 * 10 the first time
-4～1 * 10
-5Torr;
Utilize this vacuum pump that this cavity is carried out bleeding the second time, simultaneously this gettering material in this crucible is heated to molten state with this heater, make this gettering material produce steam in this cavity,, the gas molecule in this deposition chamber is reduced fast in order to catch residual gas molecule; And
When this vacuum pump is evacuated to a ultimate aim vacuum degree with the vacuum degree of this deposition chamber, stop to heat this gettering material.
9. the method that deposition chamber is vacuumized as claimed in claim 8, wherein above-mentioned ultimate predeterminated target vacuum degree is 9 * 10
-6To 1 * 10
-7Torr.
10. the method that deposition chamber is vacuumized as claimed in claim 8, wherein this gettering material is a titanium piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101369597A CN101877302B (en) | 2009-04-30 | 2009-04-30 | Method for vacuumizing cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101369597A CN101877302B (en) | 2009-04-30 | 2009-04-30 | Method for vacuumizing cavity |
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| Publication Number | Publication Date |
|---|---|
| CN101877302A CN101877302A (en) | 2010-11-03 |
| CN101877302B true CN101877302B (en) | 2011-11-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101369597A Active CN101877302B (en) | 2009-04-30 | 2009-04-30 | Method for vacuumizing cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106730065B (en) * | 2017-01-18 | 2024-03-08 | 北京雅果科技有限公司 | Negative pressure generating system and negative pressure generating method |
| CN106581833B (en) * | 2017-01-18 | 2024-02-06 | 北京雅果科技有限公司 | Breathing machine |
| CN106971963B (en) * | 2017-03-17 | 2020-02-14 | 武汉华星光电技术有限公司 | Dry etching machine processing cavity and method for rapidly pumping bottom and pressing leakage rate thereof |
| CN107385410B (en) * | 2017-08-31 | 2019-07-05 | 武汉华星光电技术有限公司 | A kind of forvacuum device |
| CN108715993A (en) * | 2018-03-12 | 2018-10-30 | 浙江龙鼎车业有限公司 | Automobile lampshade exempts from priming paint aluminum plating process and automobile lampshade exempts from priming paint and aluminizes device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356673A (en) * | 1991-03-18 | 1994-10-18 | Jet Process Corporation | Evaporation system and method for gas jet deposition of thin film materials |
| US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
| CN1357500A (en) * | 2000-12-09 | 2002-07-10 | 洛阳晶润镀膜玻璃有限公司 | Vacuum-pumping method in coated glass production |
-
2009
- 2009-04-30 CN CN2009101369597A patent/CN101877302B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356673A (en) * | 1991-03-18 | 1994-10-18 | Jet Process Corporation | Evaporation system and method for gas jet deposition of thin film materials |
| US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
| CN1357500A (en) * | 2000-12-09 | 2002-07-10 | 洛阳晶润镀膜玻璃有限公司 | Vacuum-pumping method in coated glass production |
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| Publication number | Publication date |
|---|---|
| CN101877302A (en) | 2010-11-03 |
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