CN209472927U - Transistor radiator - Google Patents
Transistor radiator Download PDFInfo
- Publication number
- CN209472927U CN209472927U CN201821524480.1U CN201821524480U CN209472927U CN 209472927 U CN209472927 U CN 209472927U CN 201821524480 U CN201821524480 U CN 201821524480U CN 209472927 U CN209472927 U CN 209472927U
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- transistor
- copper bar
- dissipation copper
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 73
- 230000017525 heat dissipation Effects 0.000 claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 claims abstract description 59
- 239000010949 copper Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011889 copper foil Substances 0.000 claims abstract description 14
- 238000009434 installation Methods 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000009423 ventilation Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The utility model relates to the technical field of transistor heat dissipation, in particular to a transistor radiator, which comprises a horizontally arranged PCB substrate, a copper foil arranged on the surface of the PCB substrate, a transistor arranged on the PCB substrate and at least one L-shaped heat dissipation copper bar, wherein the L-shaped heat dissipation copper bar is positioned above the transistor; the pins of the transistor are in direct contact with the copper foil and the L-shaped heat dissipation copper bar for heat transfer. The L-shaped heat dissipation copper bar increases the heat dissipation area and reduces the occupied space; meanwhile, the transistor and the part, located in the horizontal direction, of the L-shaped heat dissipation copper bar are separated from each other by a certain distance, so that ventilation is facilitated, and the heat dissipation effect is better. Be equipped with a plurality of bar through-holes on L type heat dissipation copper bar, further increase heat radiating area, improve the radiating effect, can range upon range of a plurality of L type heat dissipation copper bars that set up in vertical direction according to actual space and heat dissipation demand simultaneously, improved the radiating efficiency.
Description
Technical field
The utility model relates to transistor radiating technical fields, and in particular to a kind of transistor heat sinks.
Background technique
Present power source products increasingly pursue miniaturization, high-power, and the power density of product is caused to sharply increase.And
For metal-oxide-semiconductor constant power conversioning transistor, radiating requirements are also increasing.Good heat dissipation has the stabilization of whole system
Important meaning.
Existing transistor heat sinks mostly use greatly heat conductive silica gel to pacify heat, transistor with the mode that radiating copper sheet directly contacts
Heat is passed to heat dissipation copper sheet by heat conductive silica gel to radiate, this mode can occupy more areas in the horizontal direction,
Simultaneously because the one side of heat dissipation copper sheet is directly contacted with the heat conductive silica gel on substrate, practical radiating surface is caused there was only one side, heat dissipation
Effect is bad.
Utility model content
The utility model proposes a kind of transistor heat sinks, it is intended to which the heat dissipation copper sheet for solving transistor in the prior art occupies
The technical problem that area is big and heat dissipation effect is bad, specifically includes:
A kind of transistor heat sinks, including horizontally disposed PCB substrate, the PCB substrate surface are equipped with copper foil, further include
Transistor in the PCB substrate and at least one " L " type heat dissipation copper bar are set, and " L " the type radiating copper ranking is in institute
State the top of transistor；
The pin of the transistor and the copper foil and " L " type heat dissipation copper bar directly and/or indirectly transmission of heat by contact.
Wherein, described " L " the type heat dissipation copper bar includes the part of part and vertical direction positioned at horizontal direction, the crystal
Pipe is arranged in the underface of the part of horizontal direction, and with the part of the part and vertical direction that are located at horizontal direction every
Open certain spacing.
Further, described " L " the type heat dissipation copper bar is equipped with multiple strip through-holes.
Preferably, " L " type heat dissipation copper bar includes two, and " L " type radiating copper described in two is ranked in vertical direction
Part direct contact heat transfer, be stacked positioned at the part of horizontal direction and separate a fixed spacing.
Preferably, the pin of the transistor and the copper foil and " L " type heat dissipation copper bar direct contact heat transfer.
Wherein, the PCB substrate is equipped with corresponding installation hole location, for installing " L " the type heat dissipation copper bar.
Wherein, described " L " the type heat dissipation copper bar is fixed in the installation hole location by wave-soldering or Reflow Soldering.
According to the transistor heat sinks of above-described embodiment, at least one " L " type heat dissipation copper bar is set in PCB substrate, it is brilliant
The setting of body pipe increases heat dissipation area and reduces in the lower section of " L " type heat dissipation copper bar, the mode of this " L " type heat dissipation copper bar
Occupied space；Transistor is separated with " L " type radiating copper ranking in the part of horizontal direction and the part of vertical direction simultaneously
A certain distance, is conducive to the ventilation between " L " type heat dissipation copper bar and transistor in this way, and heat dissipation effect is more preferable.Further, exist
" L " type radiates copper bar equipped with multiple strip through-holes, further increases heat dissipation area, improves heat dissipation effect.Wherein transistor
Copper foil and " L " type heat dissipation copper bar direct contact heat transfer, heat on pin and substrate are transferred directly to " L " type heat dissipation copper bar and copper
Foil reduces the thermal resistance in heat transfer process, so that radiating efficiency is higher.It simultaneously can be according to real space and heat dissipation need
It asks, is stacked multiple " L " type heat dissipation copper bars in the vertical direction, improves radiating efficiency.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the transistor heat sinks of the embodiment of the present application；
Fig. 2 is the explosive view of the transistor heat sinks of the embodiment of the present application；
Fig. 3 is the front view of the transistor heat sinks of the embodiment of the present application.
Specific embodiment
The utility model is described in further detail below by specific embodiment combination attached drawing.
Embodiment
Fig. 1-3 is please referred to, the present embodiment provides a kind of transistor heat sinks, including PCB substrate 1, transistor 2 and two
L-type heat dissipation copper bar 3, wherein the surface at the fixed transistor 2 in the upper surface of PCB substrate 1 is equipped with copper foil, and transistor 2 utilizes copper
Foil heat transfer.Two L-type heat dissipation copper bars 3 are also equipped in PCB substrate 1, which is located at the portion of vertical direction
Divide direct contact heat transfer, certain spacing is stacked and be equipped with positioned at the part of horizontal direction, the setting of transistor 1 is dissipated in L-type
Hot copper bar 3 is located at the underface of horizontal direction part, is covered by L-type heat dissipation copper bar 3, while wherein close to the L-type of transistor 2
The part positioned at horizontal direction and the part positioned at vertical direction of heat dissipation copper bar 3 are not provided with a fixed spacing with transistor, this
Kind L-type heat dissipation copper bar 3 is compared with the mode of horizontally disposed heat dissipation copper sheet, while increasing heat dissipation area and reduces level side
Upward occupied space.Multiple L-type heat dissipation copper bars 3 and this mounting means of transistor 2 reduce the occupancy face of PCB substrate simultaneously
Product, but simultaneously with transistor 2 and the L-type heat dissipation heat dissipation of copper bar 3 is conducive to, so that the heat dissipation effect of transistor is more preferable.
Wherein, installation hole location 11 is equipped in PCB substrate 1, near transistor 2 L-type heat dissipation copper bar 3 be located at it is vertical
The lower end of direction part is equipped with corresponding mounting head, after which is injected the installation hole location 11 in PCB substrate 1, using wave
Installation place is welded in peak weldering or Reflow Soldering, and copper bar 3 that L-type can radiate is fixed in the PCB substrate 1, two L-type heat dissipations
The part that copper bar 3 is located at vertical direction part is directly contacted also by wave-soldering or Reflow Soldering welding, can be fixed.Wherein, such as
Fig. 2, it is slotting also to be provided with two installations in corresponding installation hole location 11 using the structures of two insertion terminals for mounting head in the present embodiment
Hole, it is this to be fixed conveniently and stablize by the way of insertion welding.
Wherein, it is straight to be located at vertical direction part for the copper foil on the pin and PCB substrate of transistor 2 and L-type heat dissipation copper bar 3
Contact, heat are transferred directly to L-type heat dissipation copper bar 3 and copper foil, reduce the thermal resistance in heat transfer process, so that heat dissipation effect
Rate is higher.
Further, heat dissipation area, raising heat dissipation effect are equipped on each L-type heat dissipation copper bar 3 in order to further increase
Multiple strip through-holes 31.
Radiator in the present embodiment includes the F type radiator structure that two L-type heat dissipation copper bars 3 form, the F type radiator structure
Mold molding is simple, and integration is good.
Size, quantity and the spacing dimension of L-type heat dissipation copper bar 3 can be according to the practical need that radiate in other embodiments
It asks and space size is arranged, be not limited in the mode of above-described embodiment.
Transistor heat sinks provided by the above embodiment increase heat dissipation while the occupied space for having saved pcb board
Area, and using the ventilation of transistor 2 and L-type heat dissipation copper bar 3, good heat dissipation effect, while L-type can be extended according to the actual situation
The number of heat dissipation copper bar 3, it is applied widely.
Use above specific case is illustrated the utility model, is merely used to help understand the utility model, and
Not to limit the utility model.Think of for those skilled in the art of the present invention, according to the utility model
Think, several simple deductions, deformation or replacement can also be made.
Claims (7)
1. a kind of transistor heat sinks, including horizontally disposed PCB substrate, the PCB substrate surface is equipped with copper foil；Its feature exists
In, further include the transistor being arranged in the PCB substrate and at least one " L " type heat dissipation copper bar, " L " the type radiating copper
It ranks in the top of the transistor；
The pin of the transistor and the copper foil and " L " type heat dissipation copper bar directly and/or indirectly transmission of heat by contact.
2. transistor heat sinks as described in claim 1, which is characterized in that " L " the type heat dissipation copper bar includes being located at level side
To part and vertical direction part, the transistor is arranged in the underface of the part of horizontal direction, and be located at
The part of horizontal direction and the part of vertical direction separate certain spacing.
3. transistor heat sinks as described in claim 1, which is characterized in that " L " the type heat dissipation copper bar is equipped with multiple bar shapeds
Through-hole.
4. transistor heat sinks as described in claim 1, which is characterized in that " L " the type heat dissipation copper bar includes two, two
" L " type radiating copper ranking in the part direct contact heat transfer of vertical direction, be stacked positioned at the part of horizontal direction and
Separate a fixed spacing.
5. transistor heat sinks as described in claim 1, which is characterized in that the pin of the transistor and the copper foil and " L "
Type heat dissipation copper bar direct contact heat transfer.
6. transistor heat sinks as described in claim 1, which is characterized in that the PCB substrate is equipped with corresponding installation hole location,
For installing " L " the type heat dissipation copper bar.
7. transistor heat sinks as claimed in claim 6, which is characterized in that " L " the type heat dissipation copper bar is by wave-soldering or returns
Fluid welding is fixed in the installation hole location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821524480.1U CN209472927U (en) | 2018-09-18 | 2018-09-18 | Transistor radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821524480.1U CN209472927U (en) | 2018-09-18 | 2018-09-18 | Transistor radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209472927U true CN209472927U (en) | 2019-10-08 |
Family
ID=68086047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821524480.1U Active CN209472927U (en) | 2018-09-18 | 2018-09-18 | Transistor radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209472927U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114520208A (en) * | 2020-11-19 | 2022-05-20 | 欣兴电子股份有限公司 | Package carrier and method for manufacturing the same |
-
2018
- 2018-09-18 CN CN201821524480.1U patent/CN209472927U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114520208A (en) * | 2020-11-19 | 2022-05-20 | 欣兴电子股份有限公司 | Package carrier and method for manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210127 Address after: 518101 2 / F and 3 / F, building 4, xibianling Jiayu Company Industrial Zone, Shangwu village, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN GROWATT NEW ENERGY Co.,Ltd. Address before: 518000 Guangdong Province Shenzhen Baoan District Shiyan Street Longteng community Guanghui road 28 Jiayu Industrial Zone office building a, first floor East, third floor, factory building B Patentee before: GROWATT NEW ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 518101 floor a401, 4-13, building a, Sino German European Industrial Demonstration Park, Hangcheng Avenue, guxing community, Xixiang street, Bao'an District, Shenzhen, Guangdong Patentee after: Shenzhen Growatt New Energy Technology Co.,Ltd. Address before: 518101 2 / F and 3 / F, building 4, xibianling Jiayu Company Industrial Zone, Shangwu village, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN GROWATT NEW ENERGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |