CN209367813U - A kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck - Google Patents
A kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck Download PDFInfo
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- CN209367813U CN209367813U CN201821850986.1U CN201821850986U CN209367813U CN 209367813 U CN209367813 U CN 209367813U CN 201821850986 U CN201821850986 U CN 201821850986U CN 209367813 U CN209367813 U CN 209367813U
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- thermal decomposition
- holding holes
- polycrystalline silicon
- tapered portion
- backup pad
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of silane thermal decomposition processes to produce electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, including graphite base, tapered portion, cylindrical portion and annular backup pad, graphite base lower part is provided with electrode jack, graphite base top is provided with slot, it is communicated between jack and jack by connecting hole, tapered portion is adapted with slot, tapered portion top is fixedly connected with cylindrical portion, annular backup pad is fixedly connected on the outside of cylindrical portion, annular backup pad lateral surface is provided with clamp groove, tapered portion interior bottom portion is provided with the first holding holes, the second holding holes are provided with above first holding holes, cylindrical portion is internally provided with third holding holes, first holding holes, it is communicated inside second holding holes and third holding holes and stepped setting；Total, the utility model has the advantages that firm support, effective protection, easy to disassemble.
Description
Technical field
The utility model relates to a kind of graphite chucks, and in particular to a kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace
Use graphite chuck.
Background technique
Preparing method used by polysilicon at this stage is mainly improved Siemens, but there are energy consumption height, pollution weight
The problem of, and low energy consumption, environmentally friendly for silane decomposition, preparing polysilicon using silane decomposition is to replace improvement west
The inexorable trend of Men Zifa.Wherein, polysilicon is prepared using silane decomposition, be by silane air lift obtained it is pure after heat point
It solves and produces the higher rod-like polycrystal silicon of purity in the conduction oil jacketed pipe of furnace.
Wherein, silicon core is fixed on graphite base by graphite chuck, connects copper electricity with graphite base by graphite chuck
Pole, existing graphite chuck are primarily present following problems: firstly, silicon rod surface deposition silicon, and the part that graphite chuck clamps
Because not reaching material, also just without deposition silicon, silicon core diameter does not become larger, and with the continuous deposition of silicon, silicon rod is continuous
Thicker, silicon rod and graphite chuck junction are thinner, are in the presence of upper coarse and lower fine, and the part that grips are lived is with very thin straight
Diameter carries thicker, longer silicon rod, is easy to appear rodlike condition；Secondly, polysilicon is during the deposition process, silicon can be deposited constantly
Onto silicon core and graphite components, or even the silicon having can deposit on graphite base, cause graphite base disposable, increase
Production cost is added, while the cleaning for also resulting in crystal bar is difficult；Furthermore as the growth weight of silicon rod constantly becomes larger, graphite folder
Back taper connection structure between head and graphite base to block between collet and pedestal relatively tight, causes disassembly difficult, even
Damage graphite base and collet.
So to solve the above problems, developing a kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck
It is necessary to.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and it is more to provide a kind of silane thermal decomposition process production electron level
Crystal silicon thermal decomposition furnace graphite chuck, the collet can stablize carrying silicon rod, play protective action to graphite base, prevent siliceous deposits
Onto graphite base, and it is easy to disassemble, graphite base is not damaged, so that graphite base is reusable, reduces production cost.
Purpose of the utility model is realized as follows: a kind of silane thermal decomposition process produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite
Collet, including graphite base, tapered portion, cylindrical portion and annular backup pad, wherein the setting of graphite base lower central position
Have a conical electrode jack, graphite base central upper portion position is provided with inverted conical shape slot, the jack and slot it
Between communicated by axial connecting hole, the tapered portion is adapted with the slot, and the tapered portion top is fixedly connected
Cylindrical portion is stated, is fixedly connected with the annular backup pad on the outside of the cylindrical portion, the annular backup pad lateral surface is provided with folder
Groove is held, the tapered portion interior bottom portion is provided with the first holding holes, is provided with the second holding holes above first holding holes,
The cylindrical portion is internally provided with third holding holes, communicates inside first holding holes, the second holding holes and third holding holes
And stepped setting, first holding holes and third holding holes are cylindrical structure, and second holding holes are back taper
Structure, and the basal diameter of second holding holes is greater than the first clamping bore dia, the top surface of second holding holes is straight
Diameter is less than third and clamps bore dia.
The tapered portion, cylindrical portion and annular backup pad are an integral structure setting.
The clamp groove inner surface is provided with anti-skid chequer.
The Basolateral of the annular backup pad is also fixedly connected with annular side plate.
The medial surface of the annular side plate is adjacent to the lateral surface top end face of the graphite base and connect, or passes through spiral shell
Line connection.
The annular backup pad and annular side plate are an integral structure setting.
The tapered portion taper is 6-10 degree.
By adopting the above-described technical solution, the beneficial effects of the utility model are:
(1) it is arranged by the cavity of graphite chuck internal step ladder configuration, so that silicon can also be deposited in collet interior, gradually
Increase the diameter of silicon rod bottom deposit, so that post-depositional silicon rod is more firm, while the setting of step structure, reduces carbon
The loss of head material；
(2) by the setting of annular backup pad, the supporting role to bottom silicon rod can be not only played, so that silicon rod is more
It is firm, while overprotection can be carried out to graphite base, it prevents on siliceous deposits to graphite base, graphite base is allowed to repeat benefit
With reduction production cost；
(3) by the setting of anti-skidding clamp groove, so that it is easy for assemble or unload, the damage to graphite base is reduced, so that
The recycling rate of waterused of graphite base further increases.
Detailed description of the invention
Fig. 1 is the schematic cross-sectional view of the utility model.
Fig. 2 is the schematic cross-sectional view of another embodiment of the utility model.
In figure: 1, graphite base 11, jack 12, slot 13, connecting hole 2, tapered portion 3, cylindrical portion 4,
Annular backup pad 5, clamp groove 6, the first holding holes 7, the second holding holes 8, third holding holes 9, annular side plate.
Specific embodiment
The technical solution of the utility model is described in further detail with reference to the accompanying drawing.
As shown in Figure 1 and Figure 2, a kind of silane thermal decomposition process produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, including graphite bottom
Seat 1, tapered portion 2, cylindrical portion 3 and annular backup pad 4.
Wherein, 1 lower central position of graphite base is provided with conical electrode jack 11, the electrode jack 11 and electrode phase
Adaptation, to connect electrode, 1 central upper portion position of graphite base is provided with inverted conical shape slot 12, and the slot 12 is to connect
Tapered portion 2 is communicated between jack 11 and slot 12 by axial connecting hole 13, using inverted cone-shaped structure, in polycrystalline silicon growth
In the process, the self weight of silicon core generates downward pressure so that graphite base 1 and tapered portion 2 contact it is even closer.
Wherein, tapered portion 2 is adapted with slot 12, and 2 top of tapered portion is fixedly connected with cylindrical portion 3, is consolidated on the outside of cylindrical portion 3
Surely it is connected with annular backup pad 4,4 lateral surface of annular backup pad is provided with clamp groove 5, and 5 inner surface of clamp groove is provided with anti-
Sliding line, the setting of anti-skid chequer can effectively prevent when being dismantled, slide when using extracting tools such as pipe wrench, inconvenience is torn open
It unloads, tapered portion 2, cylindrical portion 3 and annular backup pad 4 are an integral structure setting, more durable, it is preferred that tapered portion cone
Degree is 6-10 degree.
Wherein, the Basolateral of annular backup pad 4 is also fixedly connected with annular side plate 9, it is preferred that 4 He of annular backup pad
Annular side plate 9 is an integral structure setting, and the medial surface of annular side plate 9 and the lateral surface top end face of graphite base 1 are adjacent to company
Connect, or be connected through a screw thread, the setting of annular side plate 9 can institute's graphite base 1 further effective protection is provided, improve graphite
The reusable rate of pedestal 1.
Wherein, 2 interior bottom portion of tapered portion is provided with the first holding holes 6, is provided with the second holding holes above the first holding holes 6
7, cylindrical portion 3 is internally provided with third holding holes 8, communicated inside the first holding holes 6, the second holding holes 7 and third holding holes 8 and
Stepped setting, the first holding holes 6 and third holding holes 8 are cylindrical structure, and the second holding holes 7 are inverted cone-shaped structure, and
The basal diameter of second holding holes 7 is greater than 6 diameter of the first holding holes, and the top surface diameter of the second holding holes 7 is less than third holding holes 8
Stair-stepping holding holes are arranged in diameter inside tapered portion, and with the continuous deposition of silicon, silicon rod constantly becomes during siliceous deposits
Slightly, silicon rod bottom area constantly increases, and silicon rod foundation is more firm, and silicon rod is stronger after deposition.
The utility model when it is implemented, the electrode jack 11 of 1 bottom of graphite base is connected with electrode, insert by top
Slot 12 is connected with tapered portion, and 4 bottom surface of annular backup pad and 1 top surface of graphite base fit closely connection, 9 medial surface of annular side plate
Connection is fitted closely with 1 side top of graphite base or is closely connected by screw thread, so that graphite chuck and pedestal can consolidate
Connection, annular backup pad 4 and annular side plate 9 can protect graphite base 1, prevent on siliceous deposits to graphite base 1, simultaneously
Silicon rod bottom is effectively supported, the generation for the situation of falling stick is prevented, the setting of ladder-like holding holes in tapered portion 2, so that silicon
Stick foundation is more firm, and silicon rod is stronger after deposition, can be facilitated by clamp groove 5 and be torn open to graphite base 1 and collet
It unloads, realizes the recycling of graphite base 1.
The foregoing is merely the better embodiments of the utility model, are not intended to limit the utility model, all in this reality
Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the utility model
Within protection scope.
Claims (7)
1. a kind of silane thermal decomposition process produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, it is characterised in that: including graphite base
(1), tapered portion (2), cylindrical portion (3) and annular backup pad (4), wherein graphite base (1) the lower central position is provided with
Conical electrode jack (11), graphite base (1) the central upper portion position are provided with inverted conical shape slot (12), the jack
(11) it being communicated between slot (12) by axial connecting hole (13), the tapered portion (2) is adapted with the slot (12),
Tapered portion (2) top is fixedly connected with the cylindrical portion (3), is fixedly connected with the annular on the outside of the cylindrical portion (3)
Support plate (4), annular backup pad (4) lateral surface are provided with clamp groove (5), tapered portion (2) the interior bottom portion setting
Have the first holding holes (6), be provided with the second holding holes (7) above first holding holes (6), is set inside the cylindrical portion (3)
It is equipped with third holding holes (8), communicates inside first holding holes (6), the second holding holes (7) and third holding holes (8) and be in
Ladder-like setting, first holding holes (6) and third holding holes (8) are cylindrical structure, and second holding holes (7) are to fall
Pyramidal structure, and the basal diameter of second holding holes (7) is greater than the first holding holes (6) diameter, second clamping
The top surface diameter in hole (7) is less than third holding holes (8) diameter.
2. a kind of silane thermal decomposition process according to claim 1 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, feature
Be: the tapered portion (2), cylindrical portion (3) and annular backup pad (4) are an integral structure setting.
3. a kind of silane thermal decomposition process according to claim 1 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, feature
Be: clamp groove (5) inner surface is provided with anti-skid chequer.
4. a kind of silane thermal decomposition process according to claim 1 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, feature
Be: the Basolateral of the annular backup pad (4) is also fixedly connected with annular side plate (9).
5. a kind of silane thermal decomposition process according to claim 4 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, feature
Be: the medial surface of the annular side plate (9) is adjacent to the lateral surface top end face of the graphite base (1) and connect, Huo Zhetong
Cross threaded connection.
6. a kind of silane thermal decomposition process according to claim 1 or 4 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, special
Sign is: the annular backup pad (4) and annular side plate (9) are an integral structure setting.
7. a kind of silane thermal decomposition process according to claim 4 produces electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck, feature
Be: the tapered portion taper is 6-10 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821850986.1U CN209367813U (en) | 2018-11-12 | 2018-11-12 | A kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821850986.1U CN209367813U (en) | 2018-11-12 | 2018-11-12 | A kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209367813U true CN209367813U (en) | 2019-09-10 |
Family
ID=67836461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821850986.1U Active CN209367813U (en) | 2018-11-12 | 2018-11-12 | A kind of silane thermal decomposition process production electronic-grade polycrystalline silicon thermal decomposition furnace graphite chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209367813U (en) |
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2018
- 2018-11-12 CN CN201821850986.1U patent/CN209367813U/en active Active
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