CN107059112A - Semiconductor grade monocrystal stove bottom heater - Google Patents
Semiconductor grade monocrystal stove bottom heater Download PDFInfo
- Publication number
- CN107059112A CN107059112A CN201710245426.7A CN201710245426A CN107059112A CN 107059112 A CN107059112 A CN 107059112A CN 201710245426 A CN201710245426 A CN 201710245426A CN 107059112 A CN107059112 A CN 107059112A
- Authority
- CN
- China
- Prior art keywords
- support column
- heater
- semiconductor grade
- annular plate
- stove bottom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 238000007711 solidification Methods 0.000 claims abstract description 10
- 230000008023 solidification Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000462 isostatic pressing Methods 0.000 claims description 4
- 230000002787 reinforcement Effects 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- 241000276425 Xiphophorus maculatus Species 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a kind of bottom heater for semiconductor grade monocrystal stove, it is made up of heater, support column, connecting bolt, the adiabatic son of support column, pad, it is characterised in that：Heater uses symmetrical expression annular plate-like structure, and its inner and outer ring is uniformly arranged multiple tracks groove, circular hole；Support column is assemblied at the mounting-positioning holes position that heater two ends are provided with, and is fastenedly connected respectively with heater by connecting bolt；Between heater and support column, column bottom is supported to be respectively equipped with pad；Support column thermal insulation is assemblied in support column endoporus, and fixation is engaged by tightening up seam with inside.It the advantage is that：Increase heating area, improve the uniform and stability in temperature field；Increase the flexibility of heater, help to resist the deformation under the conditions of high heat load, extend its service life；Using materials such as high purity graphite, solidification carbon felts, reduce in stove and pollute, crystal purity is significantly improved.
Description
Technical field
It is especially a kind of to disclosure satisfy that semiconductor grade silicon single crystal is given birth to for monocrystal stove the present invention relates to a kind of heater
The graphite heater of a kind of semiconductor grade monocrystal stove bottom of gradient temperature field condition needed for long.
Background technology
Monocrystalline silicon is the crystal with substantially complete lattice structure, is a kind of good semi-conducting material, purity is reachable
To more than 99.9999999%, it can be used for diode level, rectifying device level, circuit-level and solar battery grade single crystal product article
Production and deep processing manufacture, its subsequent product integrated circuit and semiconductor separation part be widely used to every field,
Also occupy critical role in military avionic equipment, be inNew materialThe forward position of development.
Semiconductor grade monocrystal stove is important crystal growth equipment in monocrystalline silicon industrial chain, due to semiconductor grade silicon single crystal
Body is slowly grown under conditions of high temperature, it is necessary to which good thermograde controls to form the cold heart, while needing equal
The temperature field of even stabilization is to realize that the stable of monocrystal grows, therefore weight is extremely closed on the controllable basis of thermograde of bottom heater
Will.At present, diamond structure is used the bottom heater of monocrystal stove, design is simple, it is impossible to form uniform and stable temperature field more,
Material mechanical property and purity are relatively low simultaneously, have a strong impact on the quality of production and efficiency of silicon single crystal.Therefore, traditional monocrystal stove
Bottom heater is only applicable to the growth of solar energy level silicon single crystal, and crystal often because thermal field is disorderly, pollution the problems such as produce it is a large amount of
Impurity, crystal purity and yield rate are relatively low, have a strong impact on the production efficiency of high purity silicon monocrystalline.
How the purity of monocrystalline silicon is improved, and the production efficiency for improving monocrystalline silicon is always the problem that this area is paid close attention to.
In all multi-schemes, report is not seen in by the scheme for improving graphite material mechanical property and purity.
The content of the invention
It is an object of the invention to：Uncontrollability for the rhombus bottom heaters temperature gradient of existing monocrystal stove,
Temperature field inhomogeneities, material mechanical property and purity are low, cause low silicon monocrystal growth yield rate, purity bottom, of low quality etc.
There is provided a kind of new reliable bottom heater for semiconductor grade silicon monocrystal growth for a series of problems.
The object of the present invention is achieved like this：A kind of bottom heater for semiconductor grade monocrystal stove, including hair
The adiabatic son of hot body, support column, connecting bolt, support column, pad composition, it is characterised in that：
A) heater is annular plate-like structure, and the inner ring and outer rim envelope of annular plate-like are raised reinforcement, heater
Two strong points are symmetrically arranged at the mounting hole diametrically of annular plate-like structure, by annular plate-like segmentation of structures into symmetrical half
The stress buffer groove overlapping with radius is equipped with ring, two semi-rings, stress buffer groove includes referring to extrorse stress by inner ring
Dashpot and the stress buffer groove that inner ring is pointed to by outer rim, they are uniformly distributed and alternate setting, wherein pointing to outer rim by inner ring
Stress buffer groove end be provided with stress circular hole：
B) support column corresponding with the strong point is hollow cylinder structure, and two ends are respectively equipped with internal thread, and one end passes through bolt and pad
The mounting hole connection of piece and heater, the other end is docked by bolt and pad with electrode；
C) provided with seam is tightened up in the middle part of support column endoporus, the adiabatic son of support column is assemblied in support column endoporus and positioned at two ends respectively
Between internal thread, the adiabatic son of support column tightens up seam occlusion fixation by inside.
In the present invention：It is located between the stress circular hole of stress buffer groove end and outer shroud edge and is hung provided with equally distributed
Fill hole.
In the present invention：The outer rim of the semi-ring of the annular plate-like symmetrical configuration of the heater is kept away containing two pipelines respectively
Allow breach, they are symmetrically distributed on the corresponding semi-ring of annular plate-like structure.
In the present invention：Structure of the outer wall of the support column provided with one section of square or regular hexagon.
In the present invention：Described heater, support column, connecting bolt are made using high intensity isostatic pressing formed graphite；Institute
The adiabatic son of the support column of category is using solidification carbon felt；The material of the pad is graphite paper.
In the present invention：Described graphite, solidification carbon felt and graphite paper must be through high temperature purification treatment, wherein graphite and stone
Black paper purity requirement is 5 ppm, and the purity requirement of solidification carbon felt is 20 ppm.
In the present invention：The working power of the heater is direct current, and the anode and negative electrode of dc source pass through branch respectively
Dagger passes to heater.
The advantage of the invention is that：Because calandria uses annular plate-like structure, especially only in the annular slab of heater
The outer rim of the semi-ring of shape symmetrical configuration avoids breach containing two pipelines respectively, it compared with traditional rhombus bottom heater,
Increase heating area, be conducive to improving the uniform and stability in temperature field, crystal yield rate is improved.Due in heater
Multiple tracks stress buffer groove is set between outer shroud, extrorse stress buffer groove end is referred to by inner ring and is additionally provided with stress circular hole, manually
The flexibility of calandria is improved, and is helped to resist the deformation under the conditions of high heat load, is extended the service life of heater.Due to
Structure of the outer wall of support column provided with one section of square or regular hexagon, is that heater can be provided when installing support column
Force.Due in hollow support post, equipped with the adiabatic son of support column, heat insulating function can be effectively played.Due to heater, support
High purity graphite, the solidification material such as carbon felt and graphite paper is respectively adopted in the adiabatic son of post and pad, and requires that graphite and graphite paper are pure
Degree requires to be 5 ppm, and the purity requirement of solidification carbon felt is 20 ppm, can greatly reduce the pollutant that dissociates in stove to crystal growth
During pollution, substantially increase the purity of crystal finished product.Because heater is annular plate-like structure, the inner ring of annular plate-like
It is raised reinforcement with outer rim envelope, the rigidity of heater can be improved, meanwhile, it is located at the stress of stress buffer groove end
Equally distributed hole for hoist is provided between circular hole and outer shroud edge, is more conducively installed, and calandria in installation process can be prevented
Discontinuity causes it to deform.Because the bolt between heater and support column is configured with pad, in connection when preventing from being powered
Position causes electric current to strike sparks, while being also equipped with pad in support column bottom, is struck sparks when being powered to prevent being connected with electrode.
Brief description of the drawings
Fig. 1 is the basic structure schematic diagram the present invention relates to embodiment.The structural representation of middle heater；
Fig. 2 is heater top view of the present invention.
Fig. 3 is Fig. 1 stereoeffect schematic diagram.
In figure：1st, heater, 2, support column, 3, lower gasket, 4, Upper gasket, 5, the adiabatic son of support column, 6, bolt, 7, strengthen
Muscle, 8, mounting hole, 9, stress buffer groove, 10, stress circular hole, 11, hole for hoist, 12, pipeline avoid breach, 13, regular hexagon.
Embodiment
Accompanying drawing discloses a kind of concrete structure of embodiment of the present invention without limitation, below in conjunction with the accompanying drawings to this
Invention is further described.
From Fig. 1-Fig. 3, the present invention includes the adiabatic son 6 of heater 1, support column 2, bolt 6, support column, the and of Upper gasket 4
Lower gasket 3 is constituted, wherein：
Heater 1 is annular plate-like structure, and the inner ring and outer rim envelope of annular plate-like are raised reinforcement 7, heater 1
Two strong points are symmetrically arranged at the mounting hole 8 diametrically of annular plate-like structure, by annular plate-like segmentation of structures into symmetrical half
The stress buffer groove 9 overlapping with radius is equipped with ring, two semi-rings, stress buffer groove 9 includes referring to extrorse answer by inner ring
Power dashpot and the stress buffer groove that inner ring is pointed to by outer rim, they are uniformly distributed and alternate setting, wherein being pointed to by inner ring outer
The stress buffer groove end of edge is provided with stress circular hole 10：
Support column 2 corresponding with the strong point 8 is hollow cylinder structure, and two ends are respectively equipped with internal thread, and one end passes through bolt 6 and upper
Pad 4 is connected with the mounting hole 8 of heater 1, and the other end is docked by bolt and lower gasket 3 with electrode.
Provided with seam is tightened up in the middle part of the endoporus of support column 2, the adiabatic son 5 of support column is assemblied in the endoporus of support column 2 and position respectively
Between the internal thread of two ends, the adiabatic son 5 of support column tightens up seam occlusion fixation by inside.
In the present embodiment：It is located between the stress circular hole 10 of the end of stress buffer groove 9 and outer shroud edge provided with uniform point
The hole for hoist 11 of cloth.
In the present embodiment：The outer rim of the semi-ring of the annular plate-like symmetrical configuration of the heater is respectively containing two pipelines
Breach 12 is avoided, they are symmetrically distributed on the corresponding semi-ring of annular plate-like structure.
In the present embodiment：Structure of the outer wall of the support column 1 provided with one section of square or regular hexagon 13.
When it is implemented, described heater 1, support column 2, bolt 6 are made using high intensity isostatic pressing formed graphite；It is affiliated
The adiabatic son 5 of support column using solidification carbon felt；The material of the Upper gasket 4 and lower gasket 3 is graphite paper.Described high intensity etc.
Static pressure graphite, solidification carbon felt and graphite paper must be through high temperature purification treatments, wherein high intensity isostatic pressing formed graphite and graphite paper purity
It is required that being 5 ppm, the purity requirement of solidification carbon felt is 20 ppm.
In work：The working power of the heater 1 is direct current, and the anode and negative electrode of dc source pass through support column respectively
2 pass to heater 1.
Claims (7)
1. a kind of semiconductor grade monocrystal stove bottom heater, including the adiabatic son of heater, support column, connecting bolt, support column,
Pad is constituted, it is characterised in that：
Heater is annular plate-like structure, and the inner ring and outer rim envelope of annular plate-like are raised reinforcement, the two of heater
The individual strong point is symmetrically arranged at the mounting hole diametrically of annular plate-like structure, by annular plate-like segmentation of structures into symmetrical semi-ring,
The stress buffer groove overlapping with radius is equipped with two semi-rings, stress buffer groove includes referring to extrorse stress buffer by inner ring
Groove and the stress buffer groove that inner ring is pointed to by outer rim, they are uniformly distributed and alternate setting, wherein referring to extrorse answer by inner ring
Power dashpot end is provided with stress circular hole：
Support column corresponding with the strong point is hollow cylinder structure, and two ends are respectively equipped with internal thread, and one end passes through bolt and pad
It is connected with the mounting hole of heater, the other end is docked by bolt and pad with electrode；
Provided with seam is tightened up in the middle part of support column endoporus, the adiabatic son of support column is assemblied in support column endoporus and in two ends respectively
Between screw thread, the adiabatic son of support column tightens up seam occlusion fixation by inside.
2. semiconductor grade monocrystal stove bottom heater according to claim 1, it is characterised in that：It is located at stress buffer groove
Equally distributed hole for hoist is provided between the stress circular hole and outer shroud edge of end.
3. semiconductor grade monocrystal stove bottom heater according to claim 1, it is characterised in that：The ring of the heater
The symmetrical semi-ring outer rim of shape platy structure avoids breach containing two pipelines respectively, and they are symmetrically distributed in annular plate-like structure pair
On the semi-ring answered.
4. semiconductor grade monocrystal stove bottom heater according to claim 1, it is characterised in that：Outside the support column
Structure of the wall provided with one section of square or regular hexagon.
5. the semiconductor grade monocrystal stove bottom heater according to one of claim 1-4, it is characterised in that：Described hair
Hot body, support column, connecting bolt are made using high intensity isostatic pressing formed graphite；The adiabatic son of affiliated support column is using solidification carbon
Felt；The material of the pad is graphite paper.
6. semiconductor grade monocrystal stove bottom heater according to claim 5, it is characterised in that：It is described graphite, solid
Change carbon felt and graphite paper must be through high temperature purification treatment, wherein graphite and graphite paper purity requirement is 5 ppm, solidifies carbon felt purity
It is required that being 20 ppm.
7. semiconductor grade monocrystal stove bottom heater according to claim 5, it is characterised in that：The work of the heater
Make power supply for direct current, the anode and negative electrode of dc source pass to heater by support column respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245426.7A CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245426.7A CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107059112A true CN107059112A (en) | 2017-08-18 |
| CN107059112B CN107059112B (en) | 2023-12-08 |
Family
ID=59599608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710245426.7A Active CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107059112B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904656A (en) * | 2017-11-30 | 2018-04-13 | 南京晶升能源设备有限公司 | A kind of sapphire single-crystal furnace bottom heater and single crystal growing furnace |
| CN111996587A (en) * | 2020-07-13 | 2020-11-27 | 大同新成新材料股份有限公司 | Graphite crucible seat for semiconductor-grade silicon single crystal furnace |
| CN112626621A (en) * | 2020-12-15 | 2021-04-09 | 南京晶能半导体科技有限公司 | Thermal field applied in transverse superconducting magnetic field and crystal growth method |
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| US20070102419A1 (en) * | 2005-11-08 | 2007-05-10 | Shin-Etsu Chemical Co., Ltd. | Ceramic heater and method for producing ceramic heater |
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| JP6014237B1 (en) * | 2015-12-25 | 2016-10-25 | 並木精密宝石株式会社 | Sapphire single crystal member manufacturing equipment |
| CN206635456U (en) * | 2017-04-14 | 2017-11-14 | 南京晶能半导体科技有限公司 | Semiconductor grade monocrystal stove bottom heater |
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2017
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| US20070102419A1 (en) * | 2005-11-08 | 2007-05-10 | Shin-Etsu Chemical Co., Ltd. | Ceramic heater and method for producing ceramic heater |
| JP2013097943A (en) * | 2011-10-31 | 2013-05-20 | Momentive Performance Materials Inc | Heater and method of manufacturing the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904656A (en) * | 2017-11-30 | 2018-04-13 | 南京晶升能源设备有限公司 | A kind of sapphire single-crystal furnace bottom heater and single crystal growing furnace |
| CN111996587A (en) * | 2020-07-13 | 2020-11-27 | 大同新成新材料股份有限公司 | Graphite crucible seat for semiconductor-grade silicon single crystal furnace |
| CN112626621A (en) * | 2020-12-15 | 2021-04-09 | 南京晶能半导体科技有限公司 | Thermal field applied in transverse superconducting magnetic field and crystal growth method |
| CN112626621B (en) * | 2020-12-15 | 2022-04-12 | 南京晶能半导体科技有限公司 | Thermal field applied in transverse superconducting magnetic field and crystal growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107059112B (en) | 2023-12-08 |
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