CN209249455U - Automobile-used grade high-reliability power module - Google Patents
Automobile-used grade high-reliability power module Download PDFInfo
- Publication number
- CN209249455U CN209249455U CN201822024643.6U CN201822024643U CN209249455U CN 209249455 U CN209249455 U CN 209249455U CN 201822024643 U CN201822024643 U CN 201822024643U CN 209249455 U CN209249455 U CN 209249455U
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- Prior art keywords
- insulating substrate
- diode
- insulated gate
- gate bipolar
- chip part
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- 239000000758 substrate Substances 0.000 claims abstract description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 239000004033 plastic Substances 0.000 claims abstract description 18
- 229920003023 plastic Polymers 0.000 claims abstract description 18
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 16
- 239000010959 steel Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000000017 hydrogel Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000000499 gel Substances 0.000 claims abstract description 4
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 4
- 238000005476 soldering Methods 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims abstract description 3
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 16
- 239000011135 tin Substances 0.000 claims description 15
- 229910007637 SnAg Inorganic materials 0.000 claims description 12
- 229910007116 SnPb Inorganic materials 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 235000010210 aluminium Nutrition 0.000 description 12
- 238000001746 injection moulding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Abstract
Automobile-used grade high-reliability power module, including insulated gate bipolar transistor and the chip part of diode, insulating substrate, power terminal, signal terminal, aluminum steel, plastic shell, Silica hydrogel, thermistor, power substrate, the chip part of insulated gate bipolar transistor and diode, signal terminal pass through soldering and welding on the conductive copper layer of insulating substrate respectively；Power terminal is by ultrasonic bonding on the conductive copper layer of insulating substrate；Electrical connection is realized by aluminum wire bonding between the insulated gate bipolar transistor and the chip part of diode, between the conductive layer corresponding with insulating substrate of the chip part of insulated gate bipolar transistor and diode；Plastic shell and insulating substrate cooperate screw connection by sealing glue sticking；It is placed in the chip part of the insulated gate bipolar transistor in plastic shell and diode, insulating substrate, power terminal, signal terminal, aluminum steel, thermistor pass through and be covered with to improve insulating silicone gel pressure-resistant between each original part.
Description
Technical field
The utility model relates to the designs of power module, encapsulation and automobile-used, and specifically a kind of novel automobile grade height can
By power module, belong to power electronics field.
Background technique
At present insulated gate bipolar transistor (IGBT) module frequency converter, inverter type welder, induction heating, rail traffic with
And the fields such as wind energy, solar power generation, new-energy automobile using more and more extensive, especially power module, therefore also to function
Structure and circuit reliability, the integrated level of rate module require higher.
Summary of the invention
The purpose of the utility model is to overcome the shortcomings of the prior art, and provide it is a kind of can effectively improve structure and
The automobile-used grade high-reliability power module of circuit reliability and integrated level.
The purpose of this utility model is completed by following technical solution, a kind of automobile-used grade high-reliability power module,
Including insulated gate bipolar transistor and the chip part of diode, insulating substrate, power terminal, signal terminal, aluminum steel, modeling
Expect shell, Silica hydrogel, thermistor, power substrate, insulated gate bipolar transistor and the chip part of diode, signal end
Son is respectively through soldering and welding on the conductive copper layer of insulating substrate；Power terminal passes through ultrasonic bonding leading in insulating substrate
On electrolytic copper layer；Between the insulated gate bipolar transistor and the chip part of diode, insulated gate bipolar transistor with
And it is realized and is electrically connected by aluminum wire bonding between the chip part conductive layer corresponding with insulating substrate of diode；Outside plastics
Shell and insulating substrate (DBC) cooperate screw connection by sealing glue sticking；The insulated gate bipolar being placed in plastic shell
The chip part of transistor and diode, insulating substrate, power terminal, signal terminal, aluminum steel, thermistor pass through covering
Have to improve insulating silicone gel pressure-resistant between each original part.
As preferred: the power terminal and signal terminal using fine copper perhaps Cu alloy material surface layer naked copper or
One of electroplating gold, nickel, tin solderable metal material；The plastic shell is using PBT, PPS, nylon these high temperature resistants, insulation
Plastics of good performance are made；The power terminal is injection molding shell injection molding package by piece moulding inlaying technique；Aluminum steel uses
Fine aluminium or aluminum alloy materials are made, and are bonded by ultrasonic wave mode and are connected to insulated gate bipolar transistor and diode
Chip part and insulating substrate.
As preferred: the chip part of the insulated gate bipolar transistor and diode and insulating substrate are by adopting
It is welded to connect with one of welding material containing Sn in SnPb, SnAg, SnAgCu, PbSnAg, and welds maximum temperature control at 100 °
To between 400 °；
The power terminal and insulating substrate is by using welding material containing Sn in SnPb, SnAg, SnAgCu, PbSnAg
One of ultrasonic wave or welded connecting, and weld maximum temperature control between 100 ° to 400 °；
The signal terminal and insulating substrate is by using welding material containing Sn in SnPb, SnAg, SnAgCu, PbSnAg
One of be welded to connect, and weld maximum temperature control between 100 ° to 400 °；
The thermistor and insulating substrate by using in SnPb, SnAg, SnAgCu, PbSnAg containing Sn by welding
One of material is welded to connect, and welds maximum temperature control between 100 ° to 400 °；
As preferred: the power terminal is distributed in the both sides of module, and signal terminal is distributed in area above insulating substrate
Domain；
The chip part of the insulated gate bipolar transistor and diode, insulating substrate, thermistor, power end
Son, supersonic bonding region, signal terminal tube chamber welds with base region, cover above aluminum steel it is that useful insulating coating is constituted, be used for
Improve each device insulate between each other pressure resistance Silica hydrogel.
The utility model has the advantages that: using injection casing, locally injection molding package power terminal, raising power terminal are resisted
Thermal stress and external installation gravitation, improve power terminal integral firmness.Pass through power terminal and signal terminal and insulation base
The fatigue failure of traditional handicraft terminal welding is eliminated in plate (DBC) direct ultrasonic bonding, improves power terminal and signal end
The reliability of son and insulating substrate (DBC) connection, manufactures highly reliable IGBT module.Pass through signal end simultaneously
Son directly welds on conductive layer corresponding with insulating substrate (DBC), and further reduction can under the premise of guaranteeing current class
Module volume improves module integrated level.
Detailed description of the invention
Fig. 1 is the electrical block diagram of automobile-used grade high-reliability power module.
Fig. 2 is the schematic diagram of automobile-used grade high-reliability power module.
Fig. 3 is the partial enlargement diagram of automobile-used grade high-reliability power module.
Fig. 4 is the power substrate schematic diagram of automobile-used grade high-reliability power module.
Fig. 5 is the interior layout schematic diagram of automobile-used grade high-reliability power module.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and embodiments.It is described in the utility model shown in Fig. 1-5
A kind of automobile-used grade high-reliability power module, chip part 3 including insulated gate bipolar transistor and diode, insulation base
Plate 2, power terminal 5, signal terminal 7, aluminum steel 6, plastic shell 8, Silica hydrogel 4, thermistor 9, power substrate 1, insulated gate are double
The chip part 3 of bipolar transistor and diode, signal terminal 7 pass through soldering and welding in the conductive copper of insulating substrate 2 respectively
On layer；Power terminal 5 is by ultrasonic bonding on the conductive copper layer of insulating substrate 2；The insulated gate bipolar transistor with
And between the chip part 3 of diode, chip part 3 and 2 phase of insulating substrate of insulated gate bipolar transistor and diode
Electrical connection is realized by the bonding of aluminum steel 6 between the conductive layer answered；Plastic shell 8 and insulating substrate (DBC) 2 pass through sealant
Bonding, while cooperating screw connection；The chip part of the insulated gate bipolar transistor and diode that are placed in plastic shell 8
3, insulating substrate 2, power terminal 5, signal terminal 7, aluminum steel 6, thermistor 9 are resistance between each original part to improve by being covered with
The insulating silicone gel 4 of pressure.
As shown in the figure: the power terminal 5 and signal terminal 7 use fine copper or Cu alloy material, surface layer naked copper or
One of person's electroplating gold, nickel, tin solderable metal material；The plastic shell 8 is using PBT, PPS, nylon these high temperature resistants, absolutely
Edge plastics of good performance are made；The power terminal 5 is injection molding the injection molding package of shell 8 by piece moulding inlaying technique；Aluminum steel
6 are made of fine aluminiums or aluminum alloy materials, and be bonded by ultrasonic wave mode be connected to insulated gate bipolar transistor and
The chip part 3 of diode and insulating substrate 2.
The chip part 3 of insulated gate bipolar transistor and diode described in the utility model and insulating substrate 2 are logical
It crosses and is welded to connect using one of welding material containing Sn in SnPb, SnAg, SnAgCu, PbSnAg, and weld maximum temperature control and exist
Between 100 ° to 400 °；
The power terminal 5 and insulating substrate 2 welds material containing Sn by using in SnPb, SnAg, SnAgCu, PbSnAg
One of material ultrasonic wave or welded connecting, and maximum temperature control is welded between 100 ° to 400 °；
The signal terminal 7 and insulating substrate 2 welds material containing Sn by using in SnPb, SnAg, SnAgCu, PbSnAg
One of material is welded to connect, and welds maximum temperature control between 100 ° to 400 °；
The thermistor 9 and insulating substrate 2 by using in SnPb, SnAg, SnAgCu, PbSnAg containing Sn by welding
One of material welded connecting is connect, and welds maximum temperature control between 100 ° to 400 °；
Power terminal 5 described in the utility model is distributed in the both sides of module, and signal terminal 7 is distributed on insulating substrate 2
Square region；
The chip part 3 of the insulated gate bipolar transistor and diode, insulating substrate 2, thermistor 9, function
Rate terminal 5, supersonic bonding region, 7 tube chamber welds with base region of signal terminal, aluminum steel 6 cover useful insulating coating above and constitute
, for improve each device insulate between each other pressure resistance Silica hydrogel 4.
The utility model improves power terminal 5 and resists thermal stress by 8 part injection molding package power terminal 5 of injection casing
Gravitation is installed with outside, improves 5 integral firmness of power terminal.Pass through power terminal 5 and signal terminal 7 and insulating substrate
(DBC) directly the method for ultrasonic bonding, the fatigue failure of elimination traditional handicraft terminal welding improve power terminal 5 and letter
The reliability of number terminal 7 and insulating substrate (DBC) connection, manufactures highly reliable IGBT module.Pass through simultaneously
Signal terminal 7 directly welds on conductive layer corresponding with insulating substrate (DBC) 2, into one under the premise of guaranteeing current class
Step reduction module volume, improves module integrated level.
Claims (4)
1. automobile-used grade of high-reliability power module, chip part (3), insulation including insulated gate bipolar transistor and diode
Substrate (2), power terminal (5), signal terminal (7), aluminum steel (6), plastic shell (8), Silica hydrogel (4), thermistor (9), function
Rate substrate (1), it is characterised in that: the chip part (3) of insulated gate bipolar transistor and diode, signal terminal (7) point
Not Tong Guo soldering and welding on the conductive copper layer of insulating substrate (2)；Power terminal (5) is by ultrasonic bonding in insulating substrate
(2) on conductive copper layer；Between the insulated gate bipolar transistor and the chip part (3) of diode, insulated gate bipolar
It is bonded by aluminum steel (6) between the chip part (3) of transistor npn npn and diode and the corresponding conductive layer of insulating substrate (2)
Realize electrical connection；Plastic shell (8) and insulating substrate (2) cooperate screw connection by sealing glue sticking；It is placed in plastics
The chip part (3) of insulated gate bipolar transistor and diode in shell (8), insulating substrate (2), power terminal (5),
Signal terminal (7), aluminum steel (6), thermistor (9) are by being covered with to improve insulating silicone gel pressure-resistant between each original part
(4)。
2. automobile-used grade high-reliability power module according to claim 1, it is characterised in that: the power terminal (5) and
Signal terminal (7) uses fine copper perhaps one of Cu alloy material surface layer naked copper or electroplating gold, nickel, tin solderable metal material；
The plastic shell (8) is made of PBT, PPS, nylon these high temperature resistants, the good plastics of insulation performance；The power
Terminal (5) is molded by plastic shell (8) by piece moulding inlaying technique and wraps up；Aluminum steel (6) is made of fine aluminium or aluminum alloy materials,
And the chip part (3) for being connected to insulated gate bipolar transistor and diode and insulation base are bonded by ultrasonic wave mode
Plate (2).
3. automobile-used grade high-reliability power module according to claim 1 or 2, it is characterised in that: the insulated gate bipolar
The chip part (3) and insulating substrate (2) of transistor npn npn and diode are by using in SnPb, SnAg, SnAgCu, PbSnAg
One of welding material containing Sn is welded to connect, and welds maximum temperature control between 100 ° to 400 °；
The power terminal (5) and insulating substrate (2) welds material containing Sn by using in SnPb, SnAg, SnAgCu, PbSnAg
One of material ultrasonic wave or welded connecting, and maximum temperature control is welded between 100 ° to 400 °；
The signal terminal (7) and insulating substrate (2) welds material containing Sn by using in SnPb, SnAg, SnAgCu, PbSnAg
One of material is welded to connect, and welds maximum temperature control between 100 ° to 400 °；
The thermistor (9) and insulating substrate (2) by using in SnPb, SnAg, SnAgCu, PbSnAg containing Sn by welding
One of material welded connecting is connect, and welds maximum temperature control between 100 ° to 400 °.
4. automobile-used grade high-reliability power module according to claim 3, it is characterised in that: the power terminal (5) point
The both sides of module are distributed in, signal terminal (7) is distributed in insulating substrate (2) upper area；
The chip part (3) of the insulated gate bipolar transistor and diode, insulating substrate (2), thermistor (9),
Power terminal (5), supersonic bonding region, signal terminal (7) tube chamber welds with base region, aluminum steel (6) cover useful insulating properties above
Coating constitute, for improve each device insulate between each other pressure resistance Silica hydrogel (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822024643.6U CN209249455U (en) | 2018-12-04 | 2018-12-04 | Automobile-used grade high-reliability power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822024643.6U CN209249455U (en) | 2018-12-04 | 2018-12-04 | Automobile-used grade high-reliability power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209249455U true CN209249455U (en) | 2019-08-13 |
Family
ID=67531299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822024643.6U Active CN209249455U (en) | 2018-12-04 | 2018-12-04 | Automobile-used grade high-reliability power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209249455U (en) |
-
2018
- 2018-12-04 CN CN201822024643.6U patent/CN209249455U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
|
| CP01 | Change in the name or title of a patent holder |