CN209242942U - Double silver glass - Google Patents
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- CN209242942U CN209242942U CN201821822467.4U CN201821822467U CN209242942U CN 209242942 U CN209242942 U CN 209242942U CN 201821822467 U CN201821822467 U CN 201821822467U CN 209242942 U CN209242942 U CN 209242942U
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Abstract
The utility model embodiment discloses a kind of double silver-colored glass, including substrate of glass and the first compound medium layer being sequentially located in substrate of glass, first seed layer, first functional layer, first protective layer, second compound medium layer, second of sublayer, second functional layer, second protective layer, third compound medium layer, wherein, the dielectric layer quickly that first compound medium layer includes, first middle layer, sub- dielectric layer on first, quickly dielectric layer it is adjacent with substrate of glass, sub- dielectric layer is adjacent with the first seed layer on first, first middle layer is located at the quickly on dielectric layer and first between sub- dielectric layer, second compound medium layer include second under sub- dielectric layer, second middle layer, sub- dielectric layer on second, sub- dielectric layer is adjacent with the first protective layer under second, sub- dielectric layer is adjacent with second of sublayer on second, second middle layer position Under second on sub- dielectric layer and second between sub- dielectric layer.This pair silver glass can promote optical property after its tempering.
Description
Technical field
The utility model relates to a kind of energy-saving glass, especially a kind of double silver-colored glass.
Background technique
With the reinforcement that the implementation dynamics of national energy conservation and emission reduction policy increases and people realize low-carbon environment-friendly, with low spoke
Penetrate glass be representative energy-saving glass in door and window, glass curtain wall using more and more extensive.In low emissivity glass family, energy conservation
The double silver-layer low-radiation glass haveing excellent performance are widely applied.However, the optical property of existing double silver-layer low-radiation glass is also deposited
In certain deficiency, therefore also need further to promote its optical property to adapt to higher requirement.
Utility model content
For it is above-mentioned now, the utility model embodiment provides a kind of double silver-colored glass, optical after can promoting its tempering
Energy.
The utility model embodiment provides a kind of double silver-colored glass, including substrate of glass, and double silver-colored glass further include successively
It is the first compound medium layer, the first seed layer, the first functional layer, the first protective layer in the substrate of glass, second compound
Dielectric layer, second of sublayer, the second functional layer, the second protective layer, third compound medium layer, wherein first complex media
The the dielectric layer, the first middle layer, sub- dielectric layer on first quickly that layer includes, the described the dielectric layer and glass quickly
Substrate is adjacent, and sub- dielectric layer is adjacent with first seed layer on described first, and first middle layer is located under described first
On sub- dielectric layer and described first between sub- dielectric layer, second compound medium layer include second under sub- dielectric layer, second
Middle layer, sub- dielectric layer on second, sub- dielectric layer is adjacent with first protective layer under described second, sub- medium on described second
Layer is adjacent with second of sublayer, sub- medium on sub- dielectric layer and described second under second middle layer is located at described second
Between layer, sub- dielectric layer under the third that the third compound medium layer includes, third middle layer, sub- dielectric layer in third are described
Sub- dielectric layer is adjacent with second protective layer under third, the third middle layer be located under the third sub- dielectric layer with it is described
In third between sub- dielectric layer, and first middle layer, second middle layer and the third middle layer include metal
Layer.
In one embodiment of the utility model, the metal layer includes simple substance or the conjunction of niobium, iron, tantalum, nickel, chromium or zirconium
Gold.
In one embodiment of the utility model, the described dielectric layer, sub- dielectric layer on described first, described quickly
Sub- dielectric layer under second, sub- dielectric layer wraps respectively in sub- dielectric layer and third under sub- dielectric layer, the third on described second
Containing metal or nonmetallic oxide or nitride.
In one embodiment of the utility model, the described dielectric layer, sub- dielectric layer on described first, described quickly
Sub- dielectric layer under second, sub- dielectric layer point in sub- dielectric layer and the third under sub- dielectric layer, the third on described second
It Bao Han not silicon nitride, zinc tin oxide, Zinc-aluminium, silica, titanium oxide or niobium oxide.
In one embodiment of the utility model, first protective layer and second protective layer separately include nickel chromium triangle
Alloy or nickel chromium triangle oxide, first seed layer and second of sublayer separately include zinc oxide, Zinc-aluminium or zinc
Tin-oxide.
In one embodiment of the utility model, double silver-colored glass further include be located at first protective layer with it is described
The steady dielectric layer of the first heat between second compound medium layer and/or it is located at second protective layer and the third compound medium layer
Between the second steady dielectric layer of heat.
In one embodiment of the utility model, described quickly on dielectric layer and described first sub- dielectric layer thickness
Degree is respectively 0~80nm, and the thickness of sub- dielectric layer is respectively 0~100nm on sub- dielectric layer and described second under described second, institute
The thickness for stating sub- dielectric layer on sub- dielectric layer and the third under third is respectively 0~100nm.
In one embodiment of the utility model, first seed layer, first protective layer, the second seed
Layer or second protective layer with a thickness of 0~20nm.
In one embodiment of the utility model, first functional layer and second functional layer separately include silver or
The thickness of Kufil, first functional layer and second functional layer is respectively 0~40nm.
Above-mentioned technical proposal can have following advantage: double silver-colored glass provided by the embodiment of the utility model are using unique
The absorption intensity that each layer corresponds to different spectral bands is adjusted in the film layer structure of double compound medium layers, promotes double silver-colored glass
Optical property.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical solution of the utility model embodiment
The attached drawing used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the utility model
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of double silver-colored glass provided by the embodiment of the utility model；
Fig. 2 is the further structural schematic diagram of double silver-colored glass in Fig. 1.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without creative efforts
Every other embodiment obtained belongs to the range of the utility model shield.
As shown in Figure 1, an embodiment of the present invention provides a kind of double silver-colored glass 200, including substrate of glass 10 with successively
Be formed in the first compound medium layer 11 in substrate of glass 10, the first seed layer 12, the first functional layer 13, the first protective layer 14,
Second compound medium layer 15, second of sublayer 16, the second functional layer 17, the second protective layer 18 and third compound medium layer 19.
First compound medium layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second compound medium layer 15, second
Seed layer 16, the second functional layer 17, the second protective layer 18 and third compound medium layer 19 can be made of solid material.
Wherein, substrate of glass 10 can be simple glass, coloured glass, ultra-clear glasses or other glass, thickness can for 3~
10 millimeters (mm), preferably 6mm.
First compound medium layer 11 for example including the quickly dielectric layer 111, son is situated between in the first middle layer 112 and first
Matter layer 113.Quickly dielectric layer 111 it is adjacent with substrate of glass 10, sub- dielectric layer 113 and 12 phase of the first seed layer on first
Neighbour, the first middle layer 112 are located at the quickly on dielectric layer 111 and first between sub- dielectric layer 113.Second compound medium layer 15
For example including sub- dielectric layer 153 in sub- dielectric layer 151 under second, the second middle layer 152 and second.Sub- dielectric layer under second
151 is adjacent with the first protective layer 14, and sub- dielectric layer 153 is adjacent with second of sublayer 16 on second, and the second middle layer 152 is located at the
Under two on sub- dielectric layer 151 and second between sub- dielectric layer 153.Third compound medium layer 19 is for example including dielectric layer under third
191, sub- dielectric layer 193 in third middle layer 192 and third.Sub- dielectric layer 191 is adjacent with the second protective layer 18 under third, the
Sub- dielectric layer 193 is top layer on three, third middle layer 192 be located under third on sub- dielectric layer 191 and third sub- dielectric layer 193 it
Between.
Sub- dielectric layer on sub- dielectric layer 151, second under sub- dielectric layer 113, second on dielectric layer 111, first quickly
153, under third in sub- dielectric layer 191 and third sub- dielectric layer 193 for example separately include metal or nonmetallic oxide and
Nitride, such as silicon nitride (Si3N4), zinc tin oxide (ZnSnOx), Zinc-aluminium (AZO), silica (SiO2), oxidation
Titanium (TiO2) or niobium oxide (Nb2O5) etc..Quickly on dielectric layer 111 and first thickness of sub- dielectric layer 113 be respectively 0~
80nm, the thickness of sub- dielectric layer 153 is respectively 0~100nm on sub- dielectric layer 151 and second under second.Sub- dielectric layer under third
191 and third on the thickness of sub- dielectric layer 193 be respectively 0~100nm.First middle layer 112, the second middle layer 152 and
Three middle layers 192 are respectively metal layer.Specifically, the first middle layer 112, the second middle layer 152 and 192, third middle layer
Such as separately include the simple substance or alloy such as nichrome (NiCr) of niobium, iron, tantalum, nickel, chromium or zirconium.First middle layer 112,
The thickness of two middle layers 152 and third middle layer 192 is respectively 0~30nm.In this way, double compound medium layer film layer structures
Can the double silver Low-E products of tempering can freely adjust the absorption intensity of each layer, to promote the optical property of double silver glass.
In addition, the first seed layer 12, the first protective layer 14, second of sublayer 16 and the second protective layer 18 for example separately include
Metal, metal alloy or metal alloy oxide, such as nichrome (NiCr) or nickel chromium triangle oxide (NiCrOx) etc..Further
Ground, the first seed layer 12 and second of sublayer 16 for example separately include zinc oxide (ZnO or ZnAlOx), Zinc-aluminium (AZO)
Or zinc tin oxide (ZnSnOx) etc..First seed layer 12, the first protective layer 14, second of sublayer 16 and the second protective layer 18
Thickness be respectively 0~20nm.
First functional layer 13 and the second functional layer 17 are for example comprising silver-colored (Ag) or silver-colored (AgCu) alloy of copper.First functional layer 13
Thickness with the second functional layer 17 is respectively 0~40nm.
In addition, as shown in Fig. 2, double silver glass 200 are also for example including positioned at the first protective layer 14 and the second compound medium layer
The steady dielectric layer 21 of the first heat under the second of 15 between sub- dielectric layer 151 and/or it is located at the second protective layer 18 and compound Jie of third
The steady dielectric layer 22 of the second heat between matter layer 19.Double silver-colored glass can be improved in the steady dielectric layer 21 of first heat and the steady dielectric layer 22 of the second heat
200 thermal stability.Specifically, the steady layer 21 of the first heat and/or the steady layer 22 of the second heat are sputtered by metal oxide ceramic target and are obtained,
Such as include Zinc-aluminium (AZO, ZnAlOx), zinc tin oxide (ZnSnOx), titanium oxide (TiOx).In tempering process
In, the steady dielectric layer of heat is conducive to be promoted the thermal stability of Low-E film layer and product, and product film layer is enabled preferably to be resistant to tempering
Test without being destroyed.In addition, the use of AZO can also promote product other than product thermal stability can be improved
Optical property.It furthermore is an important factor for influencing product thermal stability due to oxygen, in film layer preparation process, heat is steady
Not oxygenation or few oxygenation when dielectric layer is sputtered using metal oxide ceramic target, it is possible to reduce diffusion from oxygen to adjacent target position with
Promote the thermal stability of product.In general, the thickness of the steady dielectric layer 21 of the first heat and the steady dielectric layer 22 of the second heat is respectively 0-50nm.
In conclusion all film layers of double silver-colored glass 200 provided by the embodiment of the utility model can be by solid material structure
At, and using the film layer structure of unique double compound medium layers, improve the optical property of double silver-colored glass.With single Jie of tradition
Matter layer film layer structure can the double silver Low-E (Low-Emissivity, low emissivity glass) of tempering compare, using double compound medium layers
Film layer structure can the double silver Low-E products of tempering can freely adjust the absorption intensity of each layer, and the absorption of these different zones
Corresponding different spectral band.The difference of the appearance color according to required by Low-E can be adjusted flexibly to obtain desired spectrum
Form can get better visible light-transmissive face in the case where guaranteeing the appearance color of glass is market mainstream appearance color
Color.Specifically, traditional Single Medium layer can the double silver-colored structure of steel and film thickness successively are as follows: substrate of glass (6mm)/Si3N4
(33.4nm)/ZnO(10.8nm)/Ag(3.3nm)/NiCr(1nm)/Si3N4(74.2nm)/NiCr(2.2nm)/Ag(21.5nm)/
NiCr(0.8nm)/Si3N4Double silver-colored glass of (49.7nm), optic test result after tempering processing are as follows: visible light transmittance
48.2%, through color a*:-5.2, b*:0.6, glass surface reflectivity 23.1%, reflected colour a*:-1.9, b*:-14.9, outdoor observation
Navy blue is presented, interior is yellow green.And a kind of double compound medium layers provided by the embodiment of the utility model can steel double silver
Structure and film thickness is successively are as follows: substrate of glass (6mm)/Si3N4 (37.6nm)/NiCr (2nm)/Si3N4 (11.9nm)/NiCr
(2nm)/Ag(15.7nm)/NiCr(2nm)/Si3N4(62nm)/NiCr(2nm)/Si3N4(35.2nm)/NiCr(0.2nm)/Ag
The double silver-colored glass of (15nm)/NiCr (0.2nm)/Si3N4 (5.1nm)/NiCr (0.2nm)/Si3N4 (33.2nm), tempering processing
Optic test result afterwards are as follows: visible light transmittance 47.8%, through color a*:-2.09, b*:-0.17, glass surface reflectivity 23%, instead
Color a*:-2.17, b*:-3.7 are penetrated, pewter is presented in outdoor observation, and light green color is presented in indoor observation.As it can be seen that no matter outdoor observation
Or indoor observation, double compound medium layer film layer structures provided by the embodiment of the utility model can the double silver Low-E of tempering face
Color is all more neutral, natural, comfortable.In addition, the first functional layer 13 and the second functional layer 17 are silver layer, energy extra reflection is infrared
Line heat, prevents heat from passing through.Furthermore because double silver glass 200 can be only with reactive magnetron sputtering sedimentation energy shape when producing
It at each layer, therefore can avoid repeatedly passing in and out filming equipment in production process, simplify production technology, be produced into can also reduce
This, improves production efficiency.
In addition, another embodiment of the utility model provides a kind of preparation method of double silver-colored glass also to prepare above-mentioned double silver-colored glass
Glass 200.Substrate of glass 10 is provided first.The usual needs of substrate of glass 10 are cleaned up, are dried, and then pass to vacuum chamber plating
Diaphragm area.Then, the first compound medium layer 11, first is successively deposited in substrate of glass 10 by way of magnetron sputtering plating
Seed layer 12, the first functional layer 13, the first protective layer 14, the second compound medium layer 15, second of sublayer 16, the second functional layer
17, the second protective layer 18 and third compound medium layer 19.Each layer is to carry out magnetron sputtering plating at room temperature to deposit to be formed
, but need to post-process the substrate of glass 10 for being formed with each layer after having deposited each layer.The mode of post-processing for example including
Tempering processing is carried out to the substrate of glass 10 for being formed with each layer, wherein the temperature of tempering processing is 650~700 DEG C, the time about 1~
10 minutes；It or include being made annealing treatment to the substrate of glass 10 for being formed with each layer, wherein the temperature of annealing is 400~650
DEG C, annealing time is 20 minutes to 2 hours.The preparation of double silver-colored glass 200 is described in detail below by two specific embodiments
Journey.
Specific embodiment 1
A kind of double silver-colored glass, film layer structure is successively outward by substrate of glass: Si3N4(37.6nm)/NiCr(2nm)/
Si3N4(11.9nm)/NiCr(2nm)/Ag(15.7nm)/NiCr(2nm)/Si3N4(62nm)/NiCr(2nm)/Si3N4
(35.2nm)/NiCr(0.2nm)/Ag(15nm)/NiCr(0.2nm)/Si3N4(5.1nm)/NiCr(0.2nm)/Si3N4
(33.2nm)。
The method for preparing this double silver-colored glass is successively:
(1) substrate of glass is cleaned up and is dried up, and is placed in vacuum sputtering area；
(2) Si is deposited by the way of magnetron sputtering on the glass substrate3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature；
(3) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(4) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, and power supply is
Intermediate frequency power supply, power are 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, are deposited at room temperature；
(5) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(6) mode that magnetron sputtering is used above at NiCr layers deposits Ag layers, and target used is Ag flat target, and power supply is straight
Stream plus the pulse power, power are 1~10KW, and process gas is pure argon, is deposited at room temperature；
(7) mode that magnetron sputtering is used above at Ag layers deposits NiCr layers, and target used is metal NiCr flat target, electricity
Source is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(8) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, and power supply is
Intermediate frequency power supply, power are 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, are deposited at room temperature；
(9) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(10) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature；
(11) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr plane
Target, power supply are that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(12) mode that magnetron sputtering is used above at NiCr layers deposits Ag layers, and target used is Ag flat target, and power supply is
Direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(13) mode that magnetron sputtering is used above at Ag layers deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(14) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature.
Specific embodiment 2
A kind of double silver-colored glass, film layer structure is successively outward by substrate of glass: Si3N4(34nm)/NiCr(0.8nm)/
Si3N4(15nm)/ZnAlOx(10nm)/Ag(11.4nm)/NiCr(0.8nm)/Si3N4(49.9nm)/NiCr(0.8nm)/Si3N4
(37.5nm)/ZnAlOx(8.6nm)/Ag(15nm)/NiCr(0.8nm)/AZO(10.9nm)/Si3N4(17nm)/NiCr
(0.8nm)/Si3N4(21.9nm)。
The method for preparing this double silver-colored glass is successively:
(1) substrate of glass is cleaned up and is dried up, and is placed in vacuum sputtering area；
(2) Si is deposited by the way of magnetron sputtering on the glass substrate3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature；
(3) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(4) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, and power supply is
Intermediate frequency power supply, power are 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, are deposited at room temperature；
(5) in Si3N4The mode that magnetron sputtering is used above in layer deposits ZnAlOx layers, and target used is ZnAl rotary target, electricity
Source is intermediate frequency power supply, and power is 10~100KW, and process gas is the mixed gas of argon gas and oxygen, is deposited at room temperature.
(6) mode that magnetron sputtering is used above at ZnAlOx layers deposits Ag layers, and target used is Ag flat target, and power supply is
Direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature.
(7) mode that magnetron sputtering is used above at Ag layers deposits NiCr layers, and target used is metal NiCr flat target, electricity
Source is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(8) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, and power supply is
Intermediate frequency power supply, power are 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, are deposited at room temperature；
(9) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(10) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature；
(11) in Si3N4The mode that magnetron sputtering is used above in layer deposits ZnAlOx layers, and target used is ZnAl rotary target,
Power supply is intermediate frequency power supply, and power is 10~100KW, and process gas is the mixed gas of argon gas and oxygen, is deposited at room temperature.
(12) mode that magnetron sputtering is used above at ZnAlOx layers deposits Ag layers, and target used is Ag flat target, power supply
For direct current plus the pulse power, power is 1~10KW, and process gas is pure argon, is deposited at room temperature.
(13) mode that magnetron sputtering is used above at Ag layers deposits NiCr layers, and target used is metal NiCr flat target,
Power supply is that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(14) mode that magnetron sputtering is used above at NiCr layers deposits AZO layers, and target used is ceramics AZO rotary target,
Power supply is intermediate frequency power supply, and power is 10~100KW, and process gas is the mixed gas of pure argon or argon gas and oxygen, in room
The lower deposition of temperature.
(15) Si is deposited by the way of magnetron sputtering on AZO layer3N4Layer, target used are SiAl rotary target, and power supply is
Intermediate frequency power supply, power are 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, are deposited at room temperature.
(16) in Si3N4The mode that magnetron sputtering is used above in layer deposits NiCr layers, and target used is metal NiCr plane
Target, power supply are that direct current adds the pulse power, and power is 1~10KW, and process gas is pure argon, is deposited at room temperature；
(17) Si is deposited by the way of magnetron sputtering on NiCr layer3N4Layer, target used are SiAl rotary target, power supply
For intermediate frequency power supply, power is 10~100KW, and process gas is the mixed gas of argon gas and nitrogen, is deposited at room temperature.
(18) manufactured glass is subjected to tempering processing.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that:
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc.
With replacement；And these are modified or replaceed, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.
Claims (9)
1. a kind of double silver-colored glass, including substrate of glass, which is characterized in that double silver-colored glass further include being sequentially located at the glass
The first compound medium layer, the first seed layer, the first functional layer, the first protective layer, the second compound medium layer, second in substrate
Sublayer, the second functional layer, the second protective layer, third compound medium layer, wherein first compound medium layer include first under
Sub- dielectric layer, the first middle layer, sub- dielectric layer on first, described quickly dielectric layer it is adjacent with the substrate of glass, it is described
Sub- dielectric layer is adjacent with first seed layer on first, first middle layer be located at described the quickly dielectric layer with it is described
On first between sub- dielectric layer, second compound medium layer include second under sub- dielectric layer, the second middle layer, son on second
Dielectric layer, sub- dielectric layer is adjacent with first protective layer under described second, on described second sub- dielectric layer with described second
Sublayer is adjacent, and second middle layer is located under described second on sub- dielectric layer and described second between sub- dielectric layer, and described the
Sub- dielectric layer under the third that triplex dielectric layer includes, third middle layer, sub- dielectric layer in third, sub- dielectric layer under the third
Adjacent with second protective layer, the third middle layer is located at sub- dielectric layer and sub- dielectric layer in the third under the third
Between, and first middle layer, second middle layer and the third middle layer include metal layer.
2. double silver-colored glass as described in claim 1, which is characterized in that the metal layer includes niobium, iron, tantalum, nickel, chromium or zirconium
Simple substance or alloy.
3. glass as described in claim 1 double silver-colored, which is characterized in that described the quickly dielectric layer, son is situated between on described first
Sub- dielectric layer under matter layer, described second, son in sub- dielectric layer and the third under sub- dielectric layer, the third on described second
Dielectric layer separately includes metal or nonmetallic oxide or nitride.
4. glass as claimed in claim 3 double silver-colored, which is characterized in that described the quickly dielectric layer, son is situated between on described first
Sub- dielectric layer under matter layer, described second, son in sub- dielectric layer and the third under sub- dielectric layer, the third on described second
Dielectric layer separately includes silicon nitride, zinc tin oxide, Zinc-aluminium, silica, titanium oxide or niobium oxide.
5. double silver-colored glass as described in claim 1, which is characterized in that first protective layer and second protective layer difference
Comprising nichrome or nickel chromium triangle oxide, first seed layer and second of sublayer separately include zinc oxide, zinc-aluminium oxygen
Compound or zinc tin oxide.
6. double silver-colored glass as described in claim 1, which is characterized in that double silver-colored glass further include being located at first protection
The steady dielectric layer of the first heat between layer and second compound medium layer and/or it is located at second protective layer and the third is multiple
Close the second steady dielectric layer of heat between dielectric layer.
7. glass as described in claim 1 double silver-colored, which is characterized in that described the son is situated between on dielectric layer and described first quickly
The thickness of matter layer is respectively 0~80nm, under described second on sub- dielectric layer and described second thickness of sub- dielectric layer be respectively 0~
100nm, the thickness of sub- dielectric layer is respectively 0~100nm in sub- dielectric layer and the third under the third.
8. glass as described in claim 1 double silver-colored, which is characterized in that first seed layer, first protective layer, described
Second of sublayer or second protective layer with a thickness of 0~20nm.
9. double silver-colored glass as described in claim 1, which is characterized in that first functional layer and second functional layer difference
Comprising silver or Kufil, the thickness of first functional layer and second functional layer is respectively 0~40nm.
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| CN201821822467.4U CN209242942U (en) | 2018-11-06 | 2018-11-06 | Double silver glass |
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| CN201821822467.4U CN209242942U (en) | 2018-11-06 | 2018-11-06 | Double silver glass |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111138088A (en) * | 2018-11-06 | 2020-05-12 | 中国南玻集团股份有限公司 | Double silver glass |
| CN112777945A (en) * | 2019-11-07 | 2021-05-11 | 中国南玻集团股份有限公司 | Three-silver glass |
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2018
- 2018-11-06 CN CN201821822467.4U patent/CN209242942U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111138088A (en) * | 2018-11-06 | 2020-05-12 | 中国南玻集团股份有限公司 | Double silver glass |
| CN112777945A (en) * | 2019-11-07 | 2021-05-11 | 中国南玻集团股份有限公司 | Three-silver glass |
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