CN209239654U - A kind of unpowered rotation of silicon wafer is without wax polishing template - Google Patents
A kind of unpowered rotation of silicon wafer is without wax polishing template Download PDFInfo
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- CN209239654U CN209239654U CN201822210269.9U CN201822210269U CN209239654U CN 209239654 U CN209239654 U CN 209239654U CN 201822210269 U CN201822210269 U CN 201822210269U CN 209239654 U CN209239654 U CN 209239654U
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- silicon wafer
- rotation
- template
- film perforation
- absorption layer
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Abstract
The utility model relates to a kind of unpowered rotations of silicon wafer without wax polishing template, it is characterized by comprising templates (1) and setting to set film perforation (2) at least one of template (1) surface, it is described to set the absorption layer (3) being provided in film perforation (2) for adsorbing silicon wafer, it the absorption layer (3) and sets and is provided at least one layer of rotation lubricating pad (4) between film perforation (2), rotation lubricating pad (4) two sides pass through lubricating fluid and absorption layer (3) respectively and to set the interior bottom absorption sliding of film perforation (2) Nian Jie.The utility model provides a kind of long service life, the unpowered rotation of silicon wafer high in machining efficiency and low production cost without wax polishing template.
Description
Technical field
The utility model relates to a kind of unpowered rotations of silicon wafer without wax polishing template.
Background technique
In the process of semiconductor material, silicon wafer, sapphire and GaAs are as common semiconductor device, integrated electricity
The basic material on road, it is often necessary to it is processed by shot blasting, and the quality of polishing technology will directly influence silicon wafer, sapphire
With the quality of gallium arsenide surface, the performance of semiconductor devices, there are mainly two types of traditional polishing technologies: having wax polishing and throws without wax
Light, wax technology are that silicon wafer, sapphire either GaAs are adhesively fixed on the plate of ceramic disk, rubbing head band when polishing
Dynamic ceramic disk rotates on polishing cloth, and polishing purpose is realized under mechanical pressure and the use of polishing liquid, and practice discovery is this to have
With the rapid development of electronic technology, and large scale integrated circuit wax polishing polishes precision low defect there are wax contamination
Integration degree is higher and higher, and requirement of the people to semiconductor devices is also further stringent, therefore the advantage without wax polishing gradually obtains
To embody, existing Wax-free polishing process uses integrated template, orders dedicated template according to the silicon wafer specification to be processed, will
Silicon wafer, which is directly introduced to setting in film perforation for template, to be polished, and set film perforation for what the silicon wafer of different size must be adapted to same size
Size just can be carried out polishing, once silicon wafer thickness is different from piece hole depth is set, silicon wafer is just very likely to during processing
Fragmentation is caused even to overturn from setting to skid off in film perforation, the silicon wafer of different-diameter different-thickness cannot be compatible with polishing, to template
Quantity, specification requirement is relatively more, must there is the quantity in stock of enough load plates and template, high production cost；Existing template service life ratio
Shorter, generally after 300mins high pressure polishing time, the absorption layer in hole loses adsorption function, to cause to process
Silicon chip surface TTV (silicon wafer thickness deviation) afterwards is poor, needs regular inspection to replace, is replaced with while time-consuming and laborious
This is relatively high.
Utility model content
In view of the deficienciess of the prior art, the purpose of this utility model is to provide a kind of long service life, processing effect
The unpowered rotation of silicon wafer that rate is high and production cost is low is without wax polishing template.
The technical solution of the utility model be achieved in that a kind of unpowered rotation of silicon wafer without wax polishing template, it is special
Sign is: it is set film perforation (2) including template (1) and setting at least one of template (1) surface, it is described to set setting in film perforation (2)
There is an absorption layer (3) for adsorbing silicon wafer, the absorption layer (3) and sets and be provided at least one layer of rotation lubrication between film perforation (2)
It pads (4), rotation lubricating pad (4) two sides, which pass through lubricating fluid and absorption layer (3) respectively and set the interior bottom absorption of film perforation (2), to be slided
Bonding.
It is preferred that are as follows: the thickness of the rotation lubricating pad (4) is arranged between 75um to 200um.
It is preferred that are as follows: the rotation lubricating pad (4) with a thickness of 75um, 100um, 125um, 150um or 200um.
It is preferred that are as follows: the depth for setting film perforation (2) be 1200um, the absorption layer (3) with a thickness of 580um.
It is preferred that are as follows: the material of the rotation lubricating pad (4) is carbon fiber.
It is preferred that are as follows: the lubricating fluid is water.
It is preferred that are as follows: it is several that set film perforation (2) circumferential equally spaced from each other from being arranged at intervals on template (1) surface along template (1).
By using above-mentioned technical proposal, in absorption layer (3) and set between film perforation (2) interior bottom provided with rotation lubricating pad
(4), the thickness of rotation lubricating pad (4) is adjustable from 75um to 200um, and the quantity in stock of template (1) is greatly saved, same diameter
Silicon wafer only needs a set of corresponding template that can reduce production cost；Template in compared with the existing technology, the utility model
The service life for greatly extending absorption layer (3) is tested high pressure polishing time and is promoted to about in 500mins；Rotation lubrication
The material that (4) use carbon fiber is padded, can make to process with the rotation of opposite film perforation (2) lesser resistance after lubricating fluid is wet
Silicon chip surface TTV out is significantly improved, and improves the silicon wafer quality of production, does not need regular replacement absorption layer (3),
Improve whole polishing efficiency；It replaces absorption layer (3) and rotation lubricating pad (4) is easy to operate, further improve production
Efficiency.The utility model provide a kind of long service life, the unpowered rotation of silicon wafer high in machining efficiency and low production cost without
Wax polishing template.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is specific embodiment of the present invention structural schematic diagram.
Fig. 2 is A-A directional profile structural schematic diagram in Fig. 1.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without creative efforts
Every other embodiment obtained, fall within the protection scope of the utility model.
As Figure 1-Figure 2, the utility model discloses a kind of unpowered rotations of silicon wafer without wax polishing template, practical at this
In novel specific embodiment, including template 1 and at least one of 1 surface of template is set sets film perforation 2, described set in film perforation 2 sets
It is equipped with the absorption layer 3 for adsorbing silicon wafer, the absorption layer 3 and sets and be provided at least one layer of rotation lubricating pad 4 between film perforation 2,
4 two sides of rotation lubricating pad pass through lubricating fluid and absorption layer 3 respectively and to set bottom absorption sliding in film perforation 2 Nian Jie.
By using above-mentioned technical proposal, the template of integral type in the prior art is changed to be arranged in setting film perforation 2 useful
It in the absorption layer 3 of absorption silicon wafer, absorption layer 3 and sets and is provided at least one layer of rotation lubricating pad 4 between film perforation 2, increase rotation
After lubricating pad 4, during silicon wafer is polished, by rotation lubricating pad 4 in setting film perforation 2 rotation and relative adsorption pad 3
Rotation occurs, so that reduce the horizontal force that absorption layer 3 is subject to reduces to extend the service life of absorption layer 3
The number for replacing maintenance, improves production efficiency, while improving the TTV of silicon chip surface after polishing, improves production and processing silicon
The quality of piece, the utility model provide a kind of long service life, silicon wafer high in machining efficiency and low production cost is unpowered from
Turn without wax polishing template.
In the utility model specific embodiment, the thickness of the rotation lubricating pad 4 is arranged between 75um to 200um.
It is by using above-mentioned technical proposal, the thickness setting of rotation lubricating pad 4 is adjustable between 75um to 200um, this
Sample can greatly save the quantity in stock of template 1, and when silicon wafer polishing of same diameter only needs a set of corresponding template, convenient
Adjusting different-thickness silicon wafer adaptation is set film perforation 2 and is polished.
In the utility model specific embodiment, the rotation lubricating pad 4 with a thickness of 75um, 100um, 125um,
150um or 200um.
In the utility model specific embodiment, the depth for setting film perforation 2 is 1200um, the thickness of the absorption layer 3
For 580um.
By using above-mentioned technical proposal, the hole depth for setting film perforation 2 is 1200um, and general rotation lubricating pad 4 is plus absorption
Pad 3, along with the overall thickness of silicon wafer is 1300 to 1350um, the thickness of absorption layer 3 is fixed as 580um, such as the silicon for needing to process
The rotation lubricating pad 4 of 200um then can be used with a thickness of 525um in piece；The silicon wafer thickness for such as needing to process is 625um, then can be used
Protection pad 4 is moistened in the rotation of 100um, mixes absorption layer 3, and so on.Two rotation lubricating pads 4 can also be used, such as the silicon wafer of processing
With a thickness of 450um, two rotation lubricating pads 4 of 75um can be added to be superimposed with 200um, mix absorption layer 3 for silicon wafer polishing.
In the utility model specific embodiment, the material of the rotation lubricating pad 4 is carbon fiber.
By using above-mentioned technical proposal, carbon fiber is set by the material of rotation lubricating pad 4, while wear resistance is high,
It can be with the rotation in setting film perforation 2 of lesser resistance, thus the silicon chip surface TTV for coming out polishing after lubricating fluid soaks
It is obviously improved, improves the quality of polishing.
In the utility model specific embodiment, the lubricating fluid is water.
By using above-mentioned technical proposal, water is set by lubricating fluid, one side production cost is low, on the other hand can mention
The absorption set between adsorption and rotation lubricating pad 4 and absorption layer 3 in film perforation 2 is adsorbed onto for rotation lubricating pad 4 to make
Firmly, make rotation lubricating pad 4 can be with the rotation in setting film perforation 2 of lesser resistance after soaking.
In the utility model specific embodiment, several to set film perforation 2 circumferential equally spaced from each other from being arranged at intervals on mould along template 1
1 surface of plate.
By using above-mentioned technical proposal, to set film perforation 2 circumferential equally spaced from each other from being arranged at intervals on template along template 1 by several
1 surface, one side uniform polish silicon wafer make silicon wafer uniform stressed guarantee quality of finish, on the other hand improve the throwing of whole silicon wafer
Light efficiency.
According to statistics, the silicon wafer that silicon wafer is polished using the template of the utility model, the TTV number of silicon chip surface
According to distribution are as follows: it be 50%, TTV < 5-10um is 20% that TTV < 3um, which is 30%, TTV < 3-5um,；Use template in the prior art
To the silicon wafer that silicon wafer is polished, the TTV data distribution of silicon chip surface are as follows: TTV < 3um is that 70%, TTV < 3-5um is
20%, TTV5-7um 10%.
By using above-mentioned technical proposal, in absorption layer 3 and sets and be provided with rotation lubricating pad 4 in film perforation 2 between bottom, from
The thickness for turning lubricating pad 4 is adjustable from 75um to 200um, and the quantity in stock of template 1 is greatly saved, and the silicon wafer of same diameter only needs
A set of corresponding template can reduce production cost；Template in compared with the existing technology, the utility model greatly extend
The service life of absorption layer 3 is tested high pressure polishing time and is promoted to about in 500mins；Rotation lubricating pad 4 uses carbon fiber
Material, the silicon chip surface TTV processed can be made after lubricating fluid is wet with the rotation of the lesser resistance of opposite film perforation 2
It is significantly improved, improves the silicon wafer quality of production, do not need regular replacement absorption layer 3, improve whole polishing effect
Rate；It replaces absorption layer 3 and rotation lubricating pad 4 is easy to operate, further improve the efficiency of production.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model
Protection scope within.
Claims (7)
1. a kind of unpowered rotation of silicon wafer is without wax polishing template, it is characterised in that: including template (1) and be arranged in template (1) table
At least one of face is set film perforation (2), described to set the absorption layer (3) being provided in film perforation (2) for adsorbing silicon wafer, the absorption layer
(3) it and sets and is provided at least one layer of rotation lubricating pad (4) between film perforation (2), rotation lubricating pad (4) two sides pass through profit respectively
Synovia and absorption layer (3) and to set the interior bottom absorption sliding of film perforation (2) Nian Jie.
2. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: the rotation profit
The thickness of skidding (4) is arranged between 75um to 200um.
3. the unpowered rotation of a kind of silicon wafer according to claim 2 is without wax polishing template, it is characterised in that: the rotation profit
Skidding (4) with a thickness of 75um, 100um, 125um, 150um or 200um.
4. the unpowered rotation of a kind of silicon wafer according to claim 2 or 3 is without wax polishing template, it is characterised in that: described to set
The depth of film perforation (2) be 1200um, the absorption layer (3) with a thickness of 580um.
5. the unpowered rotation of a kind of silicon wafer according to claim 1 or 2 or 3 is without wax polishing template, it is characterised in that: described
The material of rotation lubricating pad (4) is carbon fiber.
6. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: the lubricating fluid
For water.
7. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: several to set film perforation
(2) circumferential equally spaced from each other from being arranged at intervals on template (1) surface along template (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822210269.9U CN209239654U (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822210269.9U CN209239654U (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209239654U true CN209239654U (en) | 2019-08-13 |
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ID=67534990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201822210269.9U Expired - Fee Related CN209239654U (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
-
2018
- 2018-12-27 CN CN201822210269.9U patent/CN209239654U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190813 Termination date: 20211227 |