CN204295485U - Chemical and mechanical grinding cushion - Google Patents
Chemical and mechanical grinding cushion Download PDFInfo
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- CN204295485U CN204295485U CN201420779220.4U CN201420779220U CN204295485U CN 204295485 U CN204295485 U CN 204295485U CN 201420779220 U CN201420779220 U CN 201420779220U CN 204295485 U CN204295485 U CN 204295485U
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- layer
- groove
- chemical
- grinding
- grinding layer
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Abstract
The utility model relates to a kind of chemical and mechanical grinding cushion, comprises backsheet layer and grinding layer, and described grinding layer has abradant surface and non-abrasive side; Described grinding layer has central area and is positioned at the outer peripheral areas outside described central area; And described grinding layer comprises the central through hole of the seating surface extending to described backsheet layer from the abradant surface of described grinding layer, and gradually to the helical groove that the outer rim of described central area is launched gradually from described central through hole, the multiple radiation grooves extended from described helical groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.Chemical and mechanical grinding cushion described in the utility model, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the milled processed of the dielectric material substrate that adopts of other electronic device or metal substrate, and be conducive to the cut quantity reducing lapped face, and be conducive to the transfer of substrate.
Description
Technical field
The utility model relates to the technical field of cmp, and more particularly, the utility model relates to a kind of chemical and mechanical grinding cushion.
Background technology
Chemical-mechanical planarization (CMP) is the common technology in optics, semiconductor and other electronic device manufacturing process, uses chemical attack and mechanical force to carry out planarization to the glass substrate in process, Silicon Wafer or other backing material.In the CMP of routine, substrate to be ground is fixed on carrier module, and makes substrate contact with the grinding layer in CMP and provide controlled pressure, makes ground slurry in the flowing of grinding layer surface simultaneously.When designing grinding layer, the principal element considered is needed to have the distribution of ground slurry on grinding layer, fresh ground slurry enters the flowing of grinding track, and ground slurry from the flowing of grinding track, and flows through amount of the substantially unemployed ground slurry of abrasive areas etc.In order to reduce the amount of substantially unemployed ground slurry and improve grinding efficiency and quality, in the prior art, need at the various pattern of grinding layer surface design, but those skilled in the art knows grinding rate, ground slurry consumption and grinding effect etc. are very difficult to get both, also multiple modified node method is disclosed to reducing ground slurry consumption and the retention time making ground slurry on grinding layer the longest structure and pattern in prior art, but need at guarantee grinding rate, on the basis of quality, the non-utilization of ground slurry on further reduction grinding layer, reduce the waste of ground slurry.
Utility model content
In order to solve above-mentioned technical problem of the prior art, the purpose of this utility model is to provide a kind of chemical and mechanical grinding cushion.
To achieve these goals, the utility model have employed following technical scheme:
A kind of chemical and mechanical grinding cushion, comprise backsheet layer and grinding layer, described backsheet layer has seating surface and inner surface; It is characterized in that: described grinding layer has to the abradant surface that substrate surface grinds under ground slurry existent condition, with the non-abrasive side that described backsheet layer inner surface is bonding; Described grinding layer has central area and is positioned at the outer peripheral areas outside described central area; And described grinding layer comprises the central through hole of the seating surface extending to described backsheet layer from the abradant surface of described grinding layer, and gradually to the helical groove that the outer rim of described central area is launched gradually from described central through hole, the multiple radiation grooves extended from described helical groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.
Wherein, the degree of depth of described helical groove is greater than the degree of depth of described radiation groove and branch's groove.
Wherein, the cross section of described helical groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the cross section of described radiation groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the cross section of described branch groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the width of described helical groove, radiation groove and branch's groove is 0.2 ~ 1.2mm.
Wherein, described backsheet layer and described grinding layer are discoid.
Wherein, the diameter of described backsheet layer is more than or equal to the diameter of described grinding layer.
Wherein, the diameter of described grinding layer is 50 ~ 800mm, and the thickness of described grinding layer is 1.5 ~ 5.0mm.
Compared with prior art, chemical and mechanical grinding cushion described in the utility model has following beneficial effect:
Chemical and mechanical grinding cushion described in the utility model, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the milled processed of the dielectric material substrate that adopts of other electronic device or metal substrate, and described device supplements ground slurry to the abradant surface of described lapping device by central through hole, the availability of ground slurry is not only increased by the setting of helical groove and radiation groove, and be conducive to the deviation reducing substrate center region and neighboring area amount of grinding, not only ensure that suitable grinding rate, and be conducive to the cut quantity reducing lapped face, in addition, the air due to the external world also can enter into the interface of substrate and grinding layer from described central through hole, thus is conducive to the transfer of substrate.
Accompanying drawing explanation
Fig. 1 is the structural representation of chemical and mechanical grinding cushion cross section described in embodiment 1;
Fig. 2 is the structural representation of the abradant surface of chemical and mechanical grinding cushion described in embodiment 1.
Detailed description of the invention
Be further elaborated chemical and mechanical grinding cushion described in the utility model below with reference to specific embodiment, to help, those skilled in the art conceives utility model of the present utility model, technical scheme has more complete, accurate and deep understanding.
Embodiment 1
As shown in Fig. 1 ~ 2, the chemical and mechanical grinding cushion described in the present embodiment, it comprises backsheet layer 10 and grinding layer 20, and as required, the diameter of described grinding layer is 50 ~ 800mm, and the thickness of described grinding layer is 1.5 ~ 5.0mm; Common, conveniently rotate and press, described backsheet layer and described grinding layer are discoid; And the diameter of described backsheet layer is more than or equal to the diameter of described grinding layer; As the material of described grinding layer, soft material well known in the prior art can be used, such as conventional amino resins, acrylic resin, acrylic resin, isocyanate resin, polysulfone resin, ABS resin, polycarbonate resin or polyimide resin.Described backsheet layer 10 has seating surface 11 and inner surface 12; Described grinding layer 20 has to the abradant surface 21 that substrate surface grinds under ground slurry existent condition, with the non-abrasive side 22 that described backsheet layer inner surface is bonding; Described grinding layer 20 has central area 23 and is positioned at the outer peripheral areas 24 outside described central area; And described grinding layer 20 comprises the central through hole 25 of the seating surface 11 extending to described backsheet layer from the abradant surface 21 of described grinding layer, and gradually to the helical groove 26 that the outer rim of described central area 23 is launched gradually from described central through hole 25, the multiple radiation grooves 27 extended from described helical groove 26 to described outer peripheral areas, and described radiation groove is formed with branch's groove 28 in the outer rim of described outer peripheral areas.The degree of depth of described helical groove is greater than the degree of depth of described radiation groove and branch's groove, the cross section of described helical groove, radiation groove and branch's groove is U-shaped, V-arrangement, rectangle or semicircle, and the width of described helical groove, radiation groove and branch's groove is 0.2 ~ 1.2mm.Chemical and mechanical grinding cushion described in the present embodiment, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the milled processed of the dielectric material substrate that adopts of other electronic device or metal substrate, and described device supplements ground slurry to the abradant surface of described lapping device by central through hole, pass through helical groove, the setting of radiation groove and branch's groove not only increases the availability of ground slurry, and be conducive to the deviation reducing substrate center region and neighboring area amount of grinding, not only ensure that suitable grinding rate, and row is beneficial to the cut quantity reducing lapped face, in addition, the air due to the external world also can enter into the interface of substrate and grinding layer from described central through hole, thus is conducive to the transfer of substrate.
For the ordinary skill in the art; specific embodiment is just exemplarily described the utility model; obvious the utility model specific implementation is not subject to the restrictions described above; as long as have employed the improvement of the various unsubstantialities that method of the present utility model is conceived and technical scheme is carried out; or design of the present utility model and technical scheme directly applied to other occasion, all within protection domain of the present utility model without to improve.
Claims (9)
1. a chemical and mechanical grinding cushion, comprises backsheet layer and grinding layer, and described backsheet layer has seating surface and inner surface; It is characterized in that: described grinding layer has to the abradant surface that substrate surface grinds under ground slurry existent condition, with the non-abrasive side that described backsheet layer inner surface is bonding; Described grinding layer has central area and is positioned at the outer peripheral areas outside described central area; And described grinding layer comprises the central through hole of the seating surface extending to described backsheet layer from the abradant surface of described grinding layer, and gradually to the helical groove that the outer rim of described central area is launched gradually from described central through hole, the multiple radiation grooves extended from described helical groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.
2. chemical and mechanical grinding cushion according to claim 1, is characterized in that: the degree of depth of described helical groove is greater than the degree of depth of described radiation groove and branch's groove.
3. chemical and mechanical grinding cushion according to claim 1, is characterized in that: the cross section of described helical groove is U-shaped, V-arrangement, rectangle or semicircle.
4. chemical and mechanical grinding cushion according to claim 1, is characterized in that: the cross section of described radiation groove is U-shaped, V-arrangement, rectangle or semicircle.
5. chemical and mechanical grinding cushion according to claim 1, is characterized in that: the cross section of described branch groove is U-shaped, V-arrangement, rectangle or semicircle.
6. chemical and mechanical grinding cushion according to claim 1, is characterized in that: the width of described helical groove, radiation groove and branch's groove is 0.2 ~ 1.2mm.
7. chemical and mechanical grinding cushion according to claim 1, is characterized in that: described backsheet layer and described grinding layer are discoid.
8. chemical and mechanical grinding cushion according to claim 7, is characterized in that: the diameter of described grinding layer is 50 ~ 800mm, and the thickness of described grinding layer is 1.5 ~ 5.0mm.
9. chemical and mechanical grinding cushion according to claim 8, is characterized in that: the diameter of described backsheet layer is more than or equal to the diameter of described grinding layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420779220.4U CN204295485U (en) | 2014-12-04 | 2014-12-04 | Chemical and mechanical grinding cushion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420779220.4U CN204295485U (en) | 2014-12-04 | 2014-12-04 | Chemical and mechanical grinding cushion |
Publications (1)
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CN204295485U true CN204295485U (en) | 2015-04-29 |
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CN201420779220.4U Expired - Fee Related CN204295485U (en) | 2014-12-04 | 2014-12-04 | Chemical and mechanical grinding cushion |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107052990A (en) * | 2016-12-01 | 2017-08-18 | 苏州爱彼光电材料有限公司 | Sapphire substrate lapping device |
CN111601681A (en) * | 2018-01-12 | 2020-08-28 | 霓达杜邦股份有限公司 | Polishing pad |
-
2014
- 2014-12-04 CN CN201420779220.4U patent/CN204295485U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107052990A (en) * | 2016-12-01 | 2017-08-18 | 苏州爱彼光电材料有限公司 | Sapphire substrate lapping device |
CN111601681A (en) * | 2018-01-12 | 2020-08-28 | 霓达杜邦股份有限公司 | Polishing pad |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150429 Termination date: 20151204 |
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EXPY | Termination of patent right or utility model |