CN204277742U - Chemical mechanical polishing pads - Google Patents
Chemical mechanical polishing pads Download PDFInfo
- Publication number
- CN204277742U CN204277742U CN201420630426.0U CN201420630426U CN204277742U CN 204277742 U CN204277742 U CN 204277742U CN 201420630426 U CN201420630426 U CN 201420630426U CN 204277742 U CN204277742 U CN 204277742U
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- CN
- China
- Prior art keywords
- polishing
- layer
- groove
- chemical mechanical
- mechanical polishing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model relates to a kind of chemical mechanical polishing pads, comprises backsheet layer and polishing layer, and described polishing layer has burnishing surface and non-polished surface, and described polishing layer has central area and outer peripheral areas; And described polishing layer comprises the central through hole of the seating surface extending to described backsheet layer from described polishing layer, and be positioned at central area and concentric and by multiple annular grooves of cross channel connection with this central through hole, and the multiple radiation grooves to extend from described annular groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.Chemical mechanical polishing pads described in the utility model, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the polishing of the dielectric material substrate that adopts of other electronic device or metal substrate, and be conducive to the cut quantity reducing polished surface, and be conducive to the transfer of polishing substrate.
Description
Technical field
The utility model relates to the technical field of chemically mechanical polishing, and more particularly, the utility model relates to a kind of chemical mechanical polishing pads.
Background technology
Chemical-mechanical planarization (CMP) is the common technology in optics, semiconductor and other electronic device manufacturing process, uses chemical attack and mechanical force to carry out planarization to the glass substrate in process, Silicon Wafer or other backing material.In the CMP of routine, polished substrate is fixed on carrier module, and makes substrate contact with the polishing layer in CMP and provide controlled pressure, makes polishing slurries in the flowing of polishing layer surface simultaneously.When designing polishing layer, the principal element considered is needed to have the distribution of polishing slurries on polishing layer, fresh polishing slurries enters the flowing of polishing locus, and polishing slurries from the flowing of polishing locus, and flows through amount of the substantially unemployed polishing slurries of polishing area etc.In order to reduce the amount of substantially unemployed polishing slurries and improve polishing efficiency and quality, in the prior art, need at the various pattern of polishing layer surface design, but those skilled in the art knows polishing speed, polishing slurries consumption and polishing effect etc. are very difficult to get both, also multiple modified node method is disclosed to reducing polishing slurries consumption and the retention time making polishing slurries on polishing layer the longest structure and pattern in prior art, but need at guarantee polishing speed, on the basis of quality, the non-utilization of polishing slurries on further reduction polishing layer, reduce the waste of polishing slurries.
Utility model content
In order to solve above-mentioned technical problem of the prior art, the purpose of this utility model is to provide a kind of chemical mechanical polishing pads.
To achieve these goals, the utility model have employed following technical scheme:
A kind of chemical mechanical polishing pads, comprise backsheet layer and polishing layer, described backsheet layer has seating surface and inner surface; It is characterized in that: described polishing layer has burnishing surface substrate surface being carried out to polishing under polishing slurries existent condition, with the non-polished surface that described backsheet layer inner surface is bonding, described polishing layer has central area and is positioned at the outer peripheral areas outside described central area; And described polishing layer comprises the central through hole of the seating surface extending to described backsheet layer from the burnishing surface of described polishing layer, and be positioned at central area and concentric and by multiple annular grooves of cross channel connection with this central through hole, and the multiple radiation grooves to extend from described annular groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.
Wherein, the degree of depth of described annular groove is greater than the degree of depth of described radiation groove and branch's groove.
Wherein, the cross section of described annular groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the cross section of described radiation groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the cross section of described branch groove is U-shaped, V-arrangement, rectangle or semicircle.
Wherein, the width of described annular groove, radiation groove and branch's groove is 0.2 ~ 1.2 mm.
Wherein, described backsheet layer and described polishing layer are discoid.
Wherein, the diameter of described backsheet layer is more than or equal to the diameter of described polishing layer.
Wherein, the diameter of described polishing layer is 50 ~ 800 mm, and the thickness of described polishing layer is 1.5 ~ 5.0 mm.
Compared with prior art, chemical mechanical polishing pads described in the utility model has following beneficial effect:
Chemical mechanical polishing pads described in the utility model, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the polishing of the dielectric material substrate that adopts of other electronic device or metal substrate, and described device supplements polishing slurries to the burnishing surface of described burnishing device by central through hole, the availability of polishing slurries is not only increased by the setting of helical groove and radiation groove, and be conducive to the deviation reducing substrate center region and neighboring area polished amount, not only ensure that suitable polishing speed, and be conducive to the cut quantity reducing polished surface, in addition, the air due to the external world also can enter into the interface of substrate and polishing layer from described central through hole, thus is conducive to the transfer of substrate.
Accompanying drawing explanation
Fig. 1 is the structural representation of chemical mechanical polishing pads cross section described in embodiment 1;
Fig. 2 is the structural representation of the burnishing surface of chemical mechanical polishing pads described in embodiment 1.
Detailed description of the invention
Be further elaborated chemical mechanical polishing pads described in the utility model below with reference to specific embodiment, to help, those skilled in the art conceives utility model of the present utility model, technical scheme has more complete, accurate and deep understanding.
embodiment 1
As shown in Figure 1 and 2, the chemical mechanical polishing pads described in the present embodiment, it comprises backsheet layer 10 and polishing layer 20, and as required, the diameter of described polishing layer is 50 ~ 800 mm, and the thickness of described polishing layer is 1.5 ~ 5.0 mm; Common, conveniently rotate and press, described backsheet layer and described polishing layer are discoid; And the diameter of described backsheet layer is more than or equal to the diameter of described polishing layer; As the material of described polishing layer, soft material well known in the prior art can be used, such as conventional amino resins, acrylic resin, acrylic resin, isocyanate resin, polysulfone resin, ABS resin, polycarbonate resin or polyimide resin.Described backsheet layer 10 has seating surface 11 and inner surface 12; Described polishing layer 20 has the burnishing surface 21 substrate surface being carried out to polishing under polishing slurries existent condition, with the non-polished surface 22 that described backsheet layer inner surface is bonding; Described polishing layer 20 has central area 23 and is positioned at the outer peripheral areas 24 outside described central area; Described polishing layer 20 comprises the central through hole 25 of the seating surface 11 extending to described backsheet layer from the burnishing surface 21 of described polishing layer, and be positioned at central area 23 and multiple annular grooves 27 that are concentric with this central through hole and that be communicated with by cross passage 26, and the multiple radiation grooves 28 to extend from described annular groove 27 to described outer peripheral areas, and described radiation groove 28 is formed with branch's groove 29 in the outer rim of described outer peripheral areas.The degree of depth of described annular groove is greater than the degree of depth of described radiation groove and branch's groove, the cross section of described annular groove, radiation groove and branch's groove is U-shaped, V-arrangement, rectangle or semicircle, and the width of described annular groove, radiation groove and branch's groove is 0.2 ~ 1.2 mm.Chemical mechanical polishing pads described in the present embodiment, may be used for optical glass or resin lens, semiconductor silicon or silicon dioxide substrates, and the polishing of the dielectric material substrate that adopts of other electronic device or metal substrate, and described device supplements polishing slurries to the burnishing surface of described burnishing device by central through hole, the availability of polishing slurries is not only increased by the setting of annular groove and curvilinear shaped recesses, and be conducive to the deviation reducing polishing substrate central area and neighboring area polished amount, not only ensure that suitable polishing speed, and be conducive to the cut quantity reducing polished surface, in addition, the air due to the external world also can enter into the interface of polishing substrate and polishing layer from described central through hole, thus is conducive to the transfer of polishing substrate.
For the ordinary skill in the art; specific embodiment is just exemplarily described the utility model; obvious the utility model specific implementation is not subject to the restrictions described above; as long as have employed the improvement of the various unsubstantialities that method of the present utility model is conceived and technical scheme is carried out; or design of the present utility model and technical scheme directly applied to other occasion, all within protection domain of the present utility model without to improve.
Claims (9)
1. a chemical mechanical polishing pads, comprises backsheet layer and polishing layer, and described backsheet layer has seating surface and inner surface; It is characterized in that: described polishing layer has burnishing surface substrate surface being carried out to polishing under polishing slurries existent condition, with the non-polished surface that described backsheet layer inner surface is bonding, described polishing layer has central area and is positioned at the outer peripheral areas outside described central area; And described polishing layer comprises the central through hole of the seating surface extending to described backsheet layer from the burnishing surface of described polishing layer, and be positioned at central area and concentric and by multiple annular grooves of cross channel connection with this central through hole, and the multiple radiation grooves to extend from described annular groove to described outer peripheral areas, and described radiation groove is formed with branch's groove in the outer rim of described outer peripheral areas.
2. chemical mechanical polishing pads according to claim 1, is characterized in that: the degree of depth of described annular groove is greater than the degree of depth of described radiation groove and branch's groove.
3. chemical mechanical polishing pads according to claim 1, is characterized in that: the cross section of described annular groove is U-shaped, V-arrangement, rectangle or semicircle.
4. chemical mechanical polishing pads according to claim 1, is characterized in that: the cross section of described radiation groove is U-shaped, V-arrangement, rectangle or semicircle.
5. chemical mechanical polishing pads according to claim 1, is characterized in that: the cross section of described branch groove is U-shaped, V-arrangement, rectangle or semicircle.
6. chemical mechanical polishing pads according to claim 1, is characterized in that: the width of described annular groove, radiation groove and branch's groove is 0.2 ~ 1.2 mm.
7. chemical mechanical polishing pads according to claim 1, is characterized in that: described backsheet layer and described polishing layer are discoid.
8. chemical mechanical polishing pads according to claim 1, is characterized in that: the diameter of described backsheet layer is more than or equal to the diameter of described polishing layer.
9. chemical mechanical polishing pads according to claim 1, is characterized in that: the diameter of described polishing layer is 50 ~ 800 mm, and the thickness of described polishing layer is 1.5 ~ 5.0 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420630426.0U CN204277742U (en) | 2014-10-29 | 2014-10-29 | Chemical mechanical polishing pads |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420630426.0U CN204277742U (en) | 2014-10-29 | 2014-10-29 | Chemical mechanical polishing pads |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204277742U true CN204277742U (en) | 2015-04-22 |
Family
ID=52860938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420630426.0U Expired - Fee Related CN204277742U (en) | 2014-10-29 | 2014-10-29 | Chemical mechanical polishing pads |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204277742U (en) |
-
2014
- 2014-10-29 CN CN201420630426.0U patent/CN204277742U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20151029 |
|
| EXPY | Termination of patent right or utility model |