CN209232788U - A kind of semiconductor devices and its package substrate - Google Patents
A kind of semiconductor devices and its package substrate Download PDFInfo
- Publication number
- CN209232788U CN209232788U CN201821982836.6U CN201821982836U CN209232788U CN 209232788 U CN209232788 U CN 209232788U CN 201821982836 U CN201821982836 U CN 201821982836U CN 209232788 U CN209232788 U CN 209232788U
- Authority
- CN
- China
- Prior art keywords
- led chip
- substrate
- semiconductor devices
- electrode
- package substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000001816 cooling Methods 0.000 claims abstract description 43
- 239000003292 glue Substances 0.000 claims abstract description 26
- 230000004308 accommodation Effects 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000032683 aging Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of package substrates, comprising: substrate, electrode and several cooling fins;The electrode and several described cooling fins are set to the upper surface of the substrate, several described cooling fins are vertical with the upper surface of the substrate and one end is facing towards the electrode, to form receiving portion in the electrode surrounding, described accommodation section is for accommodating LED chip.The utility model additionally provides a kind of semiconductor devices.Using the package substrate and semiconductor devices of the utility model, can shed heat in time, and white glue is avoided to crack, and extend the service life of semiconductor devices.
Description
Technical field
The utility model relates to LED technology field more particularly to a kind of semiconductor devices and its package substrate.
Background technique
As shown in Figure 1, being the structural schematic diagram of existing semiconductor devices.As depicted in figs. 1 and 2, existing semiconductor
Device includes substrate 100 and the LED chip 101 that is fixed on substrate 100, and LED chip 101 is all around equipped with reflective wall 102,
Flourescent sheet 103 is pasted in LED chip 101.
In LED technology field, since white glue can effectively prevent the light leakage of LED chip sending, and semiconductor device is promoted
The light extraction efficiency of part, thus the reflective wall base sheet of existing semiconductor devices after latex solidified by forming.However, partly being led using
During body device, because LED chip and flourescent sheet persistently generate heat, and the heating conduction of white glue is poor, this allows for half
Conductor device not only concentrate and can not shed in time by heat, causes white glue accelerated ageing even to be cracked, the use of semiconductor devices
Service life is short.
Utility model content
In view of the above-mentioned problems, a kind of semiconductor devices and its package substrate of the utility model, can shed heat in time,
It avoids white glue from cracking, extends the service life of semiconductor devices.
In order to solve the above technical problems, a kind of package substrate of the utility model, comprising: substrate, electrode and several dissipate
Backing;The electrode and several described cooling fins are set to the upper surface of the substrate, one end of several cooling fins
Face surrounds a receiving portion, and described accommodation section is for accommodating LED chip.
As an improvement of the above scheme, the distribution shape of upper surface of several the described cooling fins in the substrate is in hollow
Cross, hollow X-type or hollow rice font.
As an improvement of the above scheme, several described cooling fins and the substrate are integrally formed.
As an improvement of the above scheme, be provided with conductive through hole on the substrate, one end of the conductive through hole with it is described
Electrode face, the other end of the conductive through hole are provided with line layer, and electrical connector is provided in the conductive through hole with by institute
Electrode is stated to connect with the line layer.
As an improvement of the above scheme, the material of the cooling fin includes whiteware.
As an improvement of the above scheme, the electrode includes positive electrode and negative electrode, and the thickness of the cooling fin is less than institute
State the interval between positive electrode and the negative electrode.
In order to solve the above technical problems, the utility model also provides a kind of semiconductor devices, comprising: at least one LED core
Piece and any of the above-described kind of package substrate;At least one described LED chip is installed in described accommodation section and connects with the electrode
It connects, is fixed with flourescent sheet on the light-emitting surface of at least one LED chip;White glue, the white glue packet are covered on the substrate
It is wrapped in the surrounding of described at least one LED chip and the flourescent sheet, and is closely connect with the side wall of several cooling fins.
As an improvement of the above scheme, the top surface of the upper surface of the flourescent sheet and the white glue and the cooling fin
It flushes.
As an improvement of the above scheme, at least one described LED chip be flip type LED chip, formal dress type LED chip and
One of vertical-type LED chip or a variety of combinations.
As an improvement of the above scheme, at least one described LED chip constitutes series arm on the package substrate.
As an improvement of the above scheme, at least one described LED chip constitutes parallel branch on the package substrate.
Utility model implements a kind of semiconductor devices and its package substrate of the utility model, has the following beneficial effects:
Due to being provided with several cooling fins on substrate, the heat dissipation area of package substrate can be effectively increased, so that using the encapsulation
Semiconductor devices made of substrate can export the heat of at least one LED chip sending by several cooling fins, mention significantly
The heat resistance of high semiconductor devices extends the ageing time of white glue, white glue is avoided to crack, and then extends the use of semiconductor devices
Service life;In addition, one end of several cooling fins is arranged facing towards electrode, receiving portion is formed in electrode surrounding, so that making
When semiconductor devices, the installation site of LED chip can be positioned by the receiving portion, moreover it is possible to promote the die bond yield of LED chip;And
And several cooling fins can increase the contact area with white glue, so that the connection of white glue and cooling fin is stronger.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing semiconductor devices.
Fig. 2 is the cross-sectional view of A1-A2 line interception in Fig. 1.
Fig. 3 is a kind of structural schematic diagram of one embodiment of package substrate of the utility model.
Fig. 4 is a kind of structural schematic diagram of another embodiment of package substrate of the utility model.
Fig. 5 is the cross-sectional view of A1-A2 line interception in Fig. 3.
Fig. 6 is a kind of structural schematic diagram of one embodiment of semiconductor devices of the utility model.
Fig. 7 is the cross-sectional view of A1-A2 line interception in Fig. 6.
Fig. 8 is the structural schematic diagram that LED chip is formal dress type LED chip in a kind of semiconductor devices of the utility model.
Fig. 9 is the structural schematic diagram that LED chip is vertical-type LED chip in a kind of semiconductor devices of the utility model.
Figure 10 is the scheme of installation that LED chip is vertical-type LED chip in a kind of semiconductor devices of the utility model.
Figure 11 is the structural representation that LED chip is 2 formal dress type LED chips in a kind of semiconductor devices of the utility model
Figure.
Figure 12 is the structural schematic diagram of 2 formal dress type LED chip parallel connections in a kind of semiconductor devices of the utility model.
Figure 13 is 2 concatenated structural schematic diagrams of formal dress type LED chip in a kind of semiconductor devices of the utility model.
Specific embodiment
Many details are explained in the following description in order to fully understand the utility model.But this is practical new
Type can be implemented with the other modes for being much different from this description, and those skilled in the art can be without prejudice to the utility model
Similar popularization is done in the case where intension, therefore the utility model is not limited by the specific embodiments disclosed below.
Clear, complete description is carried out to the technical solution of the utility model with attached drawing combined with specific embodiments below.
Fig. 3 is referred to, is a kind of structural schematic diagram of one embodiment of package substrate of the utility model.
As shown in figure 3, the package substrate includes: substrate 1, electrode 2 and several cooling fins 3;If the electrode 2 and described
Dry cooling fin 3 is set to the upper surface of the substrate 1, and an end face of several cooling fins 3 surrounds a receiving portion, described
Receiving portion is for accommodating LED chip.
Compared with prior art, in the package substrate of the utility model, due to being provided with several heat dissipations on substrate 1
Piece 3 can effectively increase the heat dissipation area of package substrate, so that can be by this using semiconductor devices made of the package substrate
The heat that several cooling fins 3 export LED chip and flourescent sheet issues greatly improves the heat resistance of semiconductor devices, extends white
The ageing time of glue, avoids white glue from cracking, and then extends the service life of semiconductor devices;In addition, several cooling fins 3
One end face surrounds receiving portion, so that the installation site of LED chip can be positioned by the receiving portion when making semiconductor devices,
The die bond yield of LED chip can also be promoted;Also, several cooling fins 3 can increase the contact area with white glue, so that white glue
It is stronger with the connection of cooling fin 3.
In existing semiconductor devices, the crackle after white glue cracking is usually by 4 corner locations of LED chip and 4 sides
Midpoint to external radiation, as described in fig. 3 and fig. 4, in the package substrate of the utility model, several cooling fins 3 are in base
The distribution shape of the upper surface of plate 1 is in hollow cross, hollow X-type or hollow rice font.In this embodiment, this several
Cooling fin 3 is distributed in heat most concentrated position on package substrate, and heat is exported in time, can effectively be promoted using the envelope
The heat dissipation performance of semiconductor devices is made in dress substrate.
Preferably, several cooling fins 3 in the package substrate and substrate 1 are integrally formed, several cooling fins 3 and base
Plate 1 is made of same material, and heat is quickly exported.
Further, the material of several cooling fins 3 and substrate 1 includes white alumina or aluminium nitride etc., can be right
The light for being incident to cooling fin 3 and substrate 1 is reflected, and the luminous efficiency that semiconductor devices is made of the package substrate is promoted.
As shown in figure 5, it is provided with conductive through hole on substrate 1 in the package substrate, one end of the conductive through hole and electricity
2 face of pole, the other end of the conductive through hole are provided with line layer 4, and electrical connector 5 is provided in the conductive through hole with by electrode 2
It is connected with line layer 4.
Further, the electrode 2 on the package substrate includes positive electrode and negative electrode, and the thickness of the cooling fin 3 is less than just
Interval between electrode and negative electrode.Since the thickness of single cooling fin 3 is very small, which is not being changed
Under the premise of the package dimension of existing substrate 1, great increasing heat radiation area.
Fig. 6 is referred to, is a kind of structural schematic diagram of another embodiment of semiconductor devices provided by the utility model.
As shown in Figure 6 and Figure 7, which includes: at least one LED chip 8 and any of the above-described kind of encapsulation base
Plate;At least one described LED chip 8 is installed in described accommodation section and connect with the electrode 2, at least one described LED core
Flourescent sheet 7 is fixed on the light-emitting surface of piece 8;Be covered with white glue 6 on the substrate 1, the white glue 6 be wrapped in it is described at least one
The surrounding of LED chip 8 and the flourescent sheet 7, and closely connect with the side wall of several cooling fins 3.
Compared with prior art, since several cooling fins 3 on package substrate are distributed in the semiconductor device extremely
The surrounding of few a LED chip 8 and flourescent sheet 7, so that the heat that at least one LED chip 8 and flourescent sheet 7 issue can pass through it
The cooling fin 3 on periphery sheds, and exports the heat of its surrounding in time, avoids heat at least one LED chip 8,7 and of flourescent sheet
The performance of white glue 6 has an impact, and can effectively increase the heat resistance of semiconductor devices, extends the ageing time of white glue 6, avoids
White glue 6 cracks, and then extends the service life of semiconductor devices.
Preferably, in the semiconductor device, the top surface of the flourescent sheet 7 and the white glue 6 and the cooling fin 3
It flushes.
Optionally, the LED chip in the semiconductor devices is flip type LED chip, vertical-type LED chip and formal dress type
One of LED chip or multiple combinations.
Specifically, as shown in fig. 6-7, when LED chip 8 is flip type LED chip, the electrode 2 on package substrate is arranged
In in receiving portion, flip type LED chip can directly be connect with electrode 2 by scaling powder or tin cream.As shown in figure 8, working as LED chip
8 when being formal dress type LED chip, and the electrode 2 on package substrate is set to outside receiving portion, and the chip electrode of formal dress type LED chip is logical
Conducting wire is crossed to connect with electrode 2.It should be understood that as shown in Figure 9 and Figure 10, when LED chip 8 is vertical-type LED chip, encapsulation
An electrode 2 on substrate is located in receiving portion, another electrode 2 is located at outside receiving portion, a core of the vertical-type LED chip
Plate electrode is connect by scaling powder or tin cream with the electrode in receiving portion, another chip electrode of the vertical-type LED chip is logical
Conducting wire is crossed to connect with the electrode 2 outside receiving portion.
Preferably, in the semiconductor devices of the utility model, in the receiving portion of package substrate mountable one, two or
Multiple LED chips.It is described in detail so that LED chip is 2 formal dress type LED chips as an example below.
Specifically, as shown in figure 11, when at least one LED chip 8 installed in receiving portion is 2 formal dress type LED chips
When, 4 electrodes need to be set outside receiving portion so that 4 chip electrodes of 2 formal dress type LED chips respectively with 4 outside receiving portion
A electrode 2 connects.
Further, when the LED chip number being equipped in receiving portion is greater than or equal to 2, conducting wire can also be passed through
LED chip is attached, so that LED chip constitutes series arm or LED chip on package substrate on package substrate
Parallel branch is constituted, to reduce the volume of semiconductor devices.It is carried out so that LED chip is 2 formal dress type LED chips as an example below detailed
It describes in detail bright.
Specifically, as shown in figure 12, the electrode on package substrate includes positive electrode 21 and negative electrode 22, and LED chip 8 includes
Chip anode 81 and chip cathode 82.When at least one LED chip 8 installed in receiving portion is 2 formal dress type LED chips,
By the way that the chip anode 81 in 2 LED chips 8 to be connect with positive electrode 21, by the chip cathode 82 in 2 LED chips 8 and bear
Electrode 22 connects the parallel connection, it can be achieved that 2 LED chips 8.
As shown in figure 13, when at least one LED chip 8 installed in receiving portion is 2 formal dress type LED chips, pass through
The chip anode 81 of a LED chip in 2 LED chips is connect with the chip cathode 82 of another LED chip, and should
The chip cathode of one LED chip is connect with negative electrode 22, and the chip anode of another LED chip is connect with positive electrode 21,
The series connection of 2 LED chips 8 can be achieved.
It should be noted that at least one LED chip is 2 formal dress types in the above-mentioned receiving portion for only providing package substrate
The example of LED chip can determine that the LED chip quantity installed in the receiving portion of package substrate can be with according to above-mentioned analysis
Greater than 2, at least one LED chip can be one in flip type LED chip, formal dress type LED chip and vertical-type LED chip
Kind or multiple combinations.
The above descriptions are merely preferred embodiments of the present invention for utility model, not appoints to the utility model
What formal limitation, therefore all contents without departing from technical solutions of the utility model, according to the technical essence of the utility model pair
Any simple modification, equivalent change and modification made for any of the above embodiments still fall within the range of technical solutions of the utility model
It is interior.
Claims (10)
1. a kind of package substrate characterized by comprising substrate, electrode and several cooling fins;The electrode and described several
A cooling fin is set to the upper surface of the substrate, and an end face of several cooling fins surrounds a receiving portion, the receiving
Portion is for accommodating LED chip.
2. package substrate as described in claim 1, which is characterized in that several described cooling fins are in the upper surface of the substrate
Distribution shape be in hollow cross, hollow X-type or hollow rice font.
3. package substrate as described in claim 1, which is characterized in that several described cooling fins and substrate one at
Type.
4. package substrate as described in claim 1, which is characterized in that be provided with conductive through hole, the conduction on the substrate
One end of through-hole and the electrode face, the other end of the conductive through hole are provided with line layer, setting in the conductive through hole
There is electrical connector to connect the electrode with the line layer.
5. package substrate as described in claim 1, which is characterized in that the material of the cooling fin includes whiteware.
6. a kind of semiconductor devices characterized by comprising any at least one LED chip and such as Claims 1 to 5
Package substrate described in;At least one described LED chip is installed in described accommodation section and connect with the electrode, it is described extremely
Flourescent sheet is fixed on the light-emitting surface of a few LED chip;Be covered with white glue on the substrate, the white glue be wrapped in it is described extremely
The surrounding of few a LED chip and the flourescent sheet, and closely connect with the side wall of several cooling fins.
7. semiconductor devices as claimed in claim 6, which is characterized in that at least one described LED chip is flip chip type LED core
One of piece, formal dress type LED chip and vertical-type LED chip or a variety of combinations.
8. semiconductor devices as claimed in claim 6, which is characterized in that at least one described LED chip is in the encapsulation base
Series arm is constituted on plate.
9. semiconductor devices as claimed in claim 6, which is characterized in that at least one described LED chip is in the encapsulation base
Parallel branch is constituted on plate.
10. semiconductor devices as claimed in claim 6, which is characterized in that the upper surface of the flourescent sheet and the white glue with
The top surface of the cooling fin flushes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821982836.6U CN209232788U (en) | 2018-11-28 | 2018-11-28 | A kind of semiconductor devices and its package substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821982836.6U CN209232788U (en) | 2018-11-28 | 2018-11-28 | A kind of semiconductor devices and its package substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209232788U true CN209232788U (en) | 2019-08-09 |
Family
ID=67505181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201821982836.6U Withdrawn - After Issue CN209232788U (en) | 2018-11-28 | 2018-11-28 | A kind of semiconductor devices and its package substrate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209232788U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109698263A (en) * | 2018-11-28 | 2019-04-30 | 广东晶科电子股份有限公司 | A kind of package substrate, semiconductor devices and preparation method thereof |
-
2018
- 2018-11-28 CN CN201821982836.6U patent/CN209232788U/en not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109698263A (en) * | 2018-11-28 | 2019-04-30 | 广东晶科电子股份有限公司 | A kind of package substrate, semiconductor devices and preparation method thereof |
CN109698263B (en) * | 2018-11-28 | 2023-11-03 | 广东晶科电子股份有限公司 | Packaging substrate, semiconductor device and manufacturing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101539250A (en) | LED lamp with high power | |
CN107293535B (en) | LED chip structure based on flip-chip packaging | |
CN105932019A (en) | Large power LED structure adopting COB packaging | |
CN201044245Y (en) | Led | |
CN101614326A (en) | Light emitting diode | |
CN102042568A (en) | Light-emitting diode (LED) packaging structure with composite structure substrate | |
CN209232788U (en) | A kind of semiconductor devices and its package substrate | |
CN113053864B (en) | Semiconductor double-layer array flip packaging structure and packaging method thereof | |
CN100554773C (en) | A kind of LED light fixture that has heat-dissipating aluminium plate | |
CN202957289U (en) | Light source module | |
CN109698263A (en) | A kind of package substrate, semiconductor devices and preparation method thereof | |
CN101814574A (en) | Light emitting diode base plate heat radiation structure and manufacture method thereof | |
CN201004460Y (en) | A LED lamp based on COA technology | |
CN203131498U (en) | Light emitting diode (LED) lamp source based on chip on board (COB) substrate | |
CN202905774U (en) | Substrate for light source module | |
CN113097366B (en) | Inverted double-sided packaging full-circumference light-emitting LED bracket and preparation method thereof | |
CN201893369U (en) | LED (Light-Emitting Diode) | |
CN205028918U (en) | LED support and LED packaging body | |
CN103378079A (en) | Multiple-chip array type chip-on-board (COB) inversely-installed eutectic packaging structure and method | |
CN203103348U (en) | COB base plate structure-equipped LED lamp source | |
CN102544300A (en) | LED packaging structure | |
CN202013885U (en) | LED (Light Emitting Diode) integrated packaging device arranged at upper and lower of electrode | |
CN102945844A (en) | Light source module | |
CN206992109U (en) | A kind of outdoor big spacing LED component and LED display | |
CN105546499A (en) | Radiator and flip-chip mining lamp |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20190809 Effective date of abandoning: 20231103 |
|
AV01 | Patent right actively abandoned |
Granted publication date: 20190809 Effective date of abandoning: 20231103 |