CN209216964U - A kind of heat radiating type patch triode - Google Patents
A kind of heat radiating type patch triode Download PDFInfo
- Publication number
- CN209216964U CN209216964U CN201920095502.5U CN201920095502U CN209216964U CN 209216964 U CN209216964 U CN 209216964U CN 201920095502 U CN201920095502 U CN 201920095502U CN 209216964 U CN209216964 U CN 209216964U
- Authority
- CN
- China
- Prior art keywords
- conductive plate
- emitter
- radiating type
- heat radiating
- type patch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a kind of heat radiating type patch triode, including plastic-sealed body, base stage conductive plate is from left to right successively arranged in the plastic-sealed body, collector conductive plate, emitter conductive plate, the base stage conductive plate, collector conductive plate, emitter conductive plate is respectively connected with pin, the collector conductive plate is equipped with first diode chip, the emitter conductive plate is equipped with the second diode wafer, the first conducting wire is connected between the base stage conductive plate and the first diode chip, the second conducting wire is connected between second diode wafer and the emitter conductive plate, the plastic-sealed body upper and lower ends are all covered with heat conduction silicone.The patch triode of the utility model, structure is simple, and heat dissipation performance is excellent.
Description
Technical field
The utility model relates to triode technical fields, and in particular to a kind of heat radiating type patch triode.
Background technique
Triode, full name should be transistor, also referred to as bipolar junction transistor, transistor, be a kind of control electricity
The semiconductor devices of stream, effect is small-signal to be zoomed into the biggish electric signal of range value, has Current amplifier effect, is
The core element of electronic circuit.Triode is the PN junction that two close proximities are made on a block semiconductor substrate, two PN junctions
Bulk semiconductor is divided into three parts, middle section is base area, and two side portions are emitter region and collecting zone, and arrangement mode has PNP
With two kinds of NPN, by packing forms division have patch triode and plug-in unit triode.
Patch triode mostly uses SOT-23 to encapsulate, good airproof performance, but also due to leads to three using fully closed encapsulation
The heat dissipation performance of pole pipe chip is poor.
Utility model content
In view of the above problems, the utility model provides a kind of heat radiating type patch triode, structure is simple, and heat dissipation performance is excellent
It is different.
To achieve the above object, the utility model solves by the following technical programs:
A kind of heat radiating type patch triode, including plastic-sealed body are from left to right successively arranged base stage conduction in the plastic-sealed body
Plate, collector conductive plate, emitter conductive plate, the base stage conductive plate, collector conductive plate, emitter conductive plate are respectively connected with
Pin, the collector conductive plate are equipped with first diode chip, and it is brilliant that the emitter conductive plate is equipped with the second diode
Piece, is connected with the first conducting wire between the base stage conductive plate and the first diode chip, second diode wafer with
The second conducting wire is connected between the emitter conductive plate, the plastic-sealed body upper and lower ends are all covered with heat conduction silicone.
Specifically, the heat conductive silica gel layer surface is wavy shaped configuration.
Specifically, collector conductive plate upper end is connected with the first aluminium alloy heat sink, the first diode chip
It is fixed on the first aluminium alloy heat sink upper end.
Specifically, emitter conductive plate upper end is connected with the second aluminium alloy heat sink, second diode wafer
It is fixed on the second aluminium alloy heat sink upper end.
Specifically, the first diode chip includes the first area P and the first area N, the first area P and the collector
Conductive plate electrical connection.
Specifically, second diode wafer includes the 2nd area P and the 2nd area N, the 2nd area N and the emitter
Conductive plate electrical connection.
The beneficial effects of the utility model are:
The first, the patch triode of the utility model, chip are connected in series using two diode wafers, will be traditional
The NPN structure of triode is converted into the NP of two concatenated diodes, PN structure, has excellent electric conductivity, and improve
Conductive stability；
The second, plastic-sealed body upper and lower ends both increase heat conduction silicone, and the wavy structure in surface of heat conduction silicone,
Surface area is increased, the heat dissipation performance of triode is improved.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of heat radiating type patch triode of the utility model.
Fig. 2 is a kind of internal structure chart of heat radiating type patch triode of the utility model.
Appended drawing reference are as follows: plastic-sealed body 1, base stage conductive plate 2, collector conductive plate 3, the first aluminium alloy heat sink 31, transmitting
Pole conductive plate 4, the second aluminium alloy heat sink 41, pin 5, first diode chip 6, the second diode wafer 7, the first conducting wire
81, the second conducting wire 82, heat conduction silicone 9.
Specific embodiment
The utility model is described in further detail below with reference to embodiment and attached drawing, but the implementation of the utility model
Mode is without being limited thereto.
It is as shown in Figs. 1-2:
A kind of heat radiating type patch triode, including plastic-sealed body 1 are from left to right successively arranged base stage conductive plate in plastic-sealed body 1
2, collector conductive plate 3, emitter conductive plate 4, base stage conductive plate 2, collector conductive plate 3, emitter conductive plate 4 are respectively connected with
Pin 5, collector conductive plate 3 are equipped with first diode chip 6, and emitter conductive plate 4 is equipped with the second diode wafer 7,
The first conducting wire 81 is connected between base stage conductive plate 2 and first diode chip 6, the second diode wafer 7 and emitter are conductive
The second conducting wire 82 is connected between plate 4,1 upper and lower ends of plastic-sealed body are all covered with heat conduction silicone 9, and heat conduction silicone 9 has excellent
Different heating conduction.
Preferably, in order to increase the surface area of heat conduction silicone 9, the heating conduction heat conductive silica gel of triode is further increased
9 surface of layer are wavy shaped configuration.
Preferably, in order to improve the heat dissipation performance of first diode chip 6,3 upper end of collector conductive plate is connected with first
Aluminium alloy heat sink 31, first diode chip 6 are fixed on 31 upper end of the first aluminium alloy heat sink.
Preferably, in order to improve the heat dissipation performance of the second diode wafer 7,4 upper end of emitter conductive plate is connected with second
Aluminium alloy heat sink 41, the second diode wafer 7 are fixed on 41 upper end of the second aluminium alloy heat sink.
Preferably, first diode chip 6 includes the first area P and the first area N, and the first area P is electrically connected with collector conductive plate 3
It connects, the second diode wafer 7 includes the 2nd area P and the 2nd area N, and the 2nd area N is electrically connected with emitter conductive plate 4, the one or two pole
Pipe chip 6 and the second diode wafer 7 by the first conducting wire 81, the second conducting wire 82, base stage conductive plate 2, collector conductive plate 3,
After emitter conductive plate 4 is electrically connected, whole is in positive-negative-positive structure.
Above embodiments only express a kind of embodiment of the utility model, and the description thereof is more specific and detailed, but simultaneously
Therefore it cannot be interpreted as that a limitation on the scope of the patent of the present invention.It should be pointed out that for the ordinary skill of this field
For personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these belong to this
The protection scope of utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (6)
1. a kind of heat radiating type patch triode, which is characterized in that including plastic-sealed body (1), in the plastic-sealed body (1) from left to right according to
It is secondary to be equipped with base stage conductive plate (2), collector conductive plate (3), emitter conductive plate (4), the base stage conductive plate (2), collector
Conductive plate (3), emitter conductive plate (4) are respectively connected with pin (5), and the collector conductive plate (3) is equipped with first diode
Chip (6), the emitter conductive plate (4) are equipped with the second diode wafer (7), the base stage conductive plate (2) and described the
It is connected between one diode wafer (6) the first conducting wire (81), second diode wafer (7) and the emitter conductive plate
(4) it is connected between the second conducting wire (82), plastic-sealed body (1) upper and lower ends are all covered with heat conduction silicone (9).
2. a kind of heat radiating type patch triode according to claim 1, which is characterized in that heat conduction silicone (9) table
Face is wavy shaped configuration.
3. a kind of heat radiating type patch triode according to claim 1, which is characterized in that the collector conductive plate (3)
Upper end is connected with the first aluminium alloy heat sink (31), and the first diode chip (6) is fixed on the first aluminium alloy heat dissipation
Plate (31) upper end.
4. a kind of heat radiating type patch triode according to claim 1, which is characterized in that the emitter conductive plate (4)
Upper end is connected with the second aluminium alloy heat sink (41), and second diode wafer (7) is fixed on the second aluminium alloy heat dissipation
Plate (41) upper end.
5. a kind of heat radiating type patch triode according to claim 1, which is characterized in that the first diode chip
It (6) include the first area P and the first area N, the first area P is electrically connected with the collector conductive plate (3).
6. a kind of heat radiating type patch triode according to claim 1, which is characterized in that second diode wafer
It (7) include the 2nd area P and the 2nd area N, the 2nd area N is electrically connected with the emitter conductive plate (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920095502.5U CN209216964U (en) | 2019-01-21 | 2019-01-21 | A kind of heat radiating type patch triode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920095502.5U CN209216964U (en) | 2019-01-21 | 2019-01-21 | A kind of heat radiating type patch triode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209216964U true CN209216964U (en) | 2019-08-06 |
Family
ID=67467437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920095502.5U Active CN209216964U (en) | 2019-01-21 | 2019-01-21 | A kind of heat radiating type patch triode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209216964U (en) |
-
2019
- 2019-01-21 CN CN201920095502.5U patent/CN209216964U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106711137B (en) | Semiconductor device and the alternating current generator for using the semiconductor device | |
| CN106972762B (en) | Power module | |
| CN209183534U (en) | A kind of heat radiating type diode package structure being easily assembled to | |
| TW201330337A (en) | LED chip structure, LED package substrate, LED package structure and method of forming same | |
| CN209216964U (en) | A kind of heat radiating type patch triode | |
| CN211428144U (en) | Package body heat radiation structure and power semiconductor device | |
| CN110265385B (en) | Packaging structure of power device and manufacturing method thereof | |
| CN209266402U (en) | A kind of protection type patch triode | |
| US20160359404A1 (en) | AC Line Filter And AC-To-DC Rectifier Module | |
| CN207303071U (en) | A kind of high-power patch encapsulation triode | |
| CN102843862B (en) | Circuit board structure and packaging structure for IGBT (insulated gate bipolar transistor) module | |
| CN209328905U (en) | A kind of modified form patch type triode | |
| CN209249453U (en) | A kind of patch type triode with radiator structure | |
| TWI731328B (en) | Semiconductor power device | |
| CN209183551U (en) | A kind of base stage patch triode | |
| CN208889642U (en) | A kind of triode of good heat dissipation effect | |
| CN209199917U (en) | A kind of triode encapsulating structure with comprehensive heat sinking function | |
| CN202721197U (en) | High-power LED packaging module | |
| CN108133925B (en) | High-power triode of insulating encapsulation | |
| CN114628375A (en) | Crimping type semiconductor sub-module and module | |
| CN207250502U (en) | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package | |
| CN207303075U (en) | Ultra-thin stamp-mounting-paper diode | |
| CN207474464U (en) | A kind of transistor of fast quick-detach | |
| CN209087815U (en) | A kind of high-power plug-in type patch encapsulation triode | |
| CN205016530U (en) | High stable switch transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 103, building 1, No.76, Baiye Road, Liaobu Town, Dongguan City, Guangdong Province 523430 Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: No. 18, Baiye Avenue, shangtun Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province, 523430 Patentee before: Zhongzhi Semiconductor Technology (Dongguan) Co.,Ltd. |