CN209150142U - 一种压模式led结构 - Google Patents

一种压模式led结构 Download PDF

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CN209150142U
CN209150142U CN201821596281.1U CN201821596281U CN209150142U CN 209150142 U CN209150142 U CN 209150142U CN 201821596281 U CN201821596281 U CN 201821596281U CN 209150142 U CN209150142 U CN 209150142U
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chip
type led
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谭起富
吴伟
张陈超
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Huizhou Xinyongcheng Photoelectric Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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Abstract

本实用新型公开了一种压模式LED结构,包含:支架、锥形容置空间,塑胶件,塑胶件与锥形容置空间为一体成型结构,在塑胶件的上部设有晶片,以及与晶片连接的底线和金线,晶片、金线、底线通过胶液封装在锥形容置空间内。通过设置支架、锥形容置空间、塑胶件、晶片、金线、底线形成一种可靠的压模式LED结构。

Description

一种压模式LED结构
技术领域
本实用新型涉及LED封装技术领域,具体为一种压模式LED结构。
背景技术
LED封装主要包括三种方式,第一种是使用普通贴片平杯支架点胶制成;第二种是使用普通贴片平杯支架模压透镜制成;第三种是采用在PCB板模压LENS的方式来缩小角度。
第一种一般采用高粘度的硅胶进行点胶,用胶量的多少来控制透镜的高度和R角,主要缺点:胶量微弱的差异即会造成透镜的高度和R角异常,因而制程不可控。
第二种封装方式有分为两种方式:1.使用液态硅胶直接压模,液态胶的模压机极其昂贵,每台机器投入设备在百万元人民币以上,且硅胶成本也高。2.使用环氧树脂胶饼模压,目前市场上还没有一款环氧树脂胶饼是根据贴片支架的塑胶的特性所开发的,因此胶饼与塑胶的结合性很难得到保障,产品在过峰值温度为265℃的回流焊后容易出现透镜脱落、晶片或银胶被拔掉的问题。
第三种PCB板压模压LENS的方式出光光型的周边漏光严重,轴向光强不能满足使用要求,且PCB成本高,导致封装成本高。
实用新型内容
本实用新型要解决的技术问题是:提供一种性价比高,稳定可靠的压模式LED结构,从而解决过高温回流焊时此类LED不可靠、成本高的问题。
本实用新型为解决其技术问题提供的一种技术方案是:一种压模式LED结构,包含:支架、在所述支架的中心设置有锥形的容置空间,在锥形容置空间内的中心部位的底部设置有塑胶件,所述塑胶件与所述支架为一体成型结构,在塑胶件上设有晶片,以及与所述晶片连接的底线和金线,所述晶片、金线、底线通过胶液封装在所述锥形容置空间内。
作为上述方案的改进,所述支架的底部还设有呈对称布置的金属引脚,所述金属引脚分别与所述晶片连接。
作为上述方案的进一步改进,所述支架杯口处设有透镜,所述透镜与所述支架连接。
本实用新型的有益技术效果是:通过设置支架,在支架的中心设置锥形的容置空间,在锥形容置空间内的中心部位的底部设置塑胶件,塑胶件与支架为一体成型结构,在塑胶件上设有晶片、与晶片连接的底线、银胶和金线,晶片、金线、底线、银胶通过胶液封装在锥形容置空间内,再在支架的杯口制成透镜,形成一种可靠的压模式LED结构。
附图说明
为了更清楚的说明本实用新型实施例中的技术方案,下面将对实施例描述中所需要使用的附图做简单说明。
图1为本实用新型一种实施方式的俯视图;
图2为本实用新型一种实施方式的透视图;
图3为本实用新型压模式LED结构封装方法的流程图。
具体实施方式
以下结合实施例和附图对本实用新型的构思、具体结构及产生的技术效果进行清楚、完整地描述,以充分理解本实用新型的目的、方案和效果。需要说明的是,在不冲突的情况下本申请中的实施例及实施例中的特征可以相互组合。此外本实用新型中所使用的上、下、左、右等描述仅仅是相对图中本实用新型各组成部分相互位置关系来说的。
图1为本实用新型一种实施方式的俯视图,图2为本实用新型一种实施方式的透视图,参考图1和图2,压模式LED结构包括支架10,支架10的中心设有锥形的容置空间11,在锥形容置空间11的中心部位的底部设有塑胶件12,塑胶件12和支架10为注塑一体成型结构,在塑胶件12的上部设置晶片13,晶片13与底线14、银胶(图中未示)和金线15连接,晶片13、底线14、银胶金线15通过胶液封装在锥形容置空间11内。
在支架10的底部还设有金属引脚16,金属引脚16与晶片13电连接,用于压模式LED结构与外部装置或部件的连接,便于LED结构进行上电。
在支架10的杯口设有透镜20,透镜20为通过环氧树脂胶饼模压成型结构,模压成型的透镜20在模压过程中环氧树脂胶饼熔化胶液覆盖在支架杯口周圈处于半凝固状态,与锥形容置空间四周的塑胶件和胶液结合,再通过第三次烘烤凝固粘接在支架10的杯口。形成封闭的LED结构。
本实用新型还公开了一种LED结构封装方法,主要包括如下步骤:在固定晶片的区域焊接键合丝,键合丝包括金线和底线,之后进行点银胶进行固晶,在点银胶固晶时,使得部分键合丝埋在银胶中,之后进行第一次烘烤,使得键合丝与银胶完全连接为一体式结构。这样操作后,即使银胶与支架脱离,还能保障晶片底部通过银胶和键合丝与支架形成电连接,保障电性连接的可靠性。
在第一次烘烤完成后,在晶片顶部焊键合丝,优选的键合丝为99.9%金含量的金线,使得晶片的正负极分别与外部的两个引脚相连。
之后在支架内点液态环氧树脂胶水,使得支架杯内胶水完全覆盖晶片和金线,胶面不超过杯口,接下来进行第二次烘烤;之后在支架杯口处连接透镜;最后进行第三次烘烤。
需要说明的是环氧树脂胶水经烘烤固化后与支架的塑胶粘接性能大大优于环氧树脂胶饼,在LED封装结构在过高温回流焊时,使得环氧树脂胶不会与支架塑胶分离,保障晶片和金线安装固定的可靠性,有效的避免了透镜脱落、死灯的问题。
作为上述方案的改进,上述的透镜为环氧树脂胶饼模压成型,且在模压成型过程中与支架杯口、支架上的锥形容置空间内的胶液粘合,最后还进行烘烤凝固,相较于传统的透镜,通过模压胶饼生产胶饼成本更低,且支架内所点的胶液同为环氧树脂胶,透镜与支架、支架的锥形容置空间内的胶液均粘接,使得透镜与支架之间具有更好的连接性能,确保透镜不会发生脱落。
尽管结合优选实施方案具体展示和介绍了本实用新型,但所属领域的技术人员应该明白,在不脱离所述权利要求书所限定的本实用新型的精神和范围内,在形式上和细节上可以对本实用新型做出各种变化,均为本实用新型的保护范围。

Claims (3)

1.一种压模式LED结构,其特征在于,包含:支架、在所述支架的中心设置有锥形的容置空间,在锥形容置空间内的中心部位的底部设置有塑胶件,所述塑胶件与所述支架为一体成型结构,在塑胶件上设有晶片,以及与所述晶片连接的底线和金线,所述晶片、金线、底线通过胶液封装在所述锥形容置空间内。
2.根据权利要求1所述的压模式LED结构,其特征在于:所述支架的底部还设有呈对称布置的金属引脚,所述金属引脚与所述晶片连接。
3.根据权利要求2所述的压模式LED结构,其特征在于:所述支架的杯口处设有透镜,所述透镜与支架连接。
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2021017562A1 (zh) * 2020-02-18 2021-02-04 旭宇光电(深圳)股份有限公司 Led封装结构及led固晶方法

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CN109719381A (zh) * 2019-02-21 2019-05-07 巴中市特兴智能科技有限公司 一种自动焊接键合金线的工艺方法
CN114937647B (zh) * 2022-05-30 2023-03-24 广东省旭晟半导体股份有限公司 一种半导体封装结构及封装方法

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CN201204212Y (zh) * 2008-05-30 2009-03-04 深圳市瑞丰光电子有限公司 一种led封装结构
CN206742275U (zh) * 2016-12-26 2017-12-12 芜湖聚飞光电科技有限公司 一种贴片型红外led灯珠

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WO2021017562A1 (zh) * 2020-02-18 2021-02-04 旭宇光电(深圳)股份有限公司 Led封装结构及led固晶方法

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