CN209016065U - 用于电子封装件的封装盖和电子封装件 - Google Patents

用于电子封装件的封装盖和电子封装件 Download PDF

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CN209016065U
CN209016065U CN201821793645.5U CN201821793645U CN209016065U CN 209016065 U CN209016065 U CN 209016065U CN 201821793645 U CN201821793645 U CN 201821793645U CN 209016065 U CN209016065 U CN 209016065U
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antetheca
optical element
cap
chamber
channel
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K·萨克斯奥德
J-M·里维雷
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Italy Semiconductor (grenoble 2) Co
STMicroelectronics Grenoble 2 SAS
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Abstract

本文提供了用于电子封装件的封装盖和电子封装件。一种用于电子封装件的封装盖包括具有设置有允许光通过的至少一个光学元件的前壁的盖体。光学元件通过包覆模制到前壁的贯通通道中来被插入封装盖中。光学元件的正面相对于前壁的正面向后地被设置。

Description

用于电子封装件的封装盖和电子封装件
技术领域
本实用新型的实施例涉及封装件领域，尤其涉及旨在包含包括光辐射发射器和/或光辐射传感器的电子芯片的封装件，其可以通俗地称为“电子封装件”。
背景技术
已知的实践是产生包括安装在衬底晶片上的电子芯片和用于芯片的封装盖的电子封装件，这些盖安装在衬底晶片上。这些封装盖包括预制的盖体，这些盖体具有贯通通道和围绕这些通道的肩部并且设置有允许光通过的光学元件，这些光学元件通常由玻璃制成并且被添加到肩部并且通过粘合剂层被附接。因此，肩部与电子芯片之间的距离决定了光学元件与电子芯片之间的距离。
实用新型内容
本实用新型的目的在于提供用于电子封装件的封装盖以及电子封装件，其具有改进的结构和性能。
根据一个实施例，提供了一种用于电子封装件的封装盖，其包括：盖体，包括设置有允许光通过的光学元件的前壁；其中所述前壁包括贯通通道，所述光学元件通过包覆模制被插入所述贯通通道内；以及其中所述光学元件具有相对于所述前壁的正面向后地被设置的正面。
所述盖体包括相对于所述前壁突出的外围壁。
所述盖体包括相对于所述前壁突出以界定第一腔室和第二腔室的内壁，所述贯通通道面向所述第一腔室；并且所述前壁进一步包括面向所述第二腔室的另外的贯通通道，另外的光学元件通过包覆模制被插入所述另外的贯通通道内。
所述另外的光学元件具有与所述前壁的所述正面共面的正面。
所述另外的光学元件的背面相对于所述前壁的背面向后地被设置。
所述光学元件的背面相对于所述前壁的背面共面。
根据另一个实施例，提供了一种电子封装件，其包括：衬底晶片；至少一个电子部件，被安装在所述衬底晶片的表面之上；以及封装盖，被安装在所述衬底晶片的所述表面上以便形成腔室，所述至少一个电子部件位于所述腔室中；其中所述封装盖包括：盖体，包括设置有允许光通过的光学元件的前壁；其中所述前壁包括贯通通道，所述光学元件通过包覆模制被插入所述贯通通道中；以及其中所述光学元件具有相对于所述前壁的正面向后地被设置的正面；所述封装盖的所述前壁位于所述电子部件前面。
所述至少一个电子部件包括至少一个光学传感器和/或一个光学发射器。
所述至少一个电子部件穿过所述封装盖的内壁。
所述盖体包括相对于所述前壁突出的外围壁。
所述盖体包括相对于所述前壁突出以界定第一腔室和第二腔室的内壁，所述贯通通道面向所述第一腔室；并且所述前壁进一步包括面向所述第二腔室的另外的贯通通道，另外的光学元件通过包覆模制被插入所述另外的贯通通道内。
所述另外的光学元件具有与所述前壁的所述正面共面的正面。
所述另外的光学元件的背面相对于所述前壁的背面向后地被设置。
所述至少一个电子部件至少部分地位于所述第一腔室内。
所述至少一个电子部件完全位于所述第二腔室内。
所述光学元件的背面相对于所述前壁的背面共面。
还提供了一种电子封装件，该封装件包括：衬底晶片、安装在衬底晶片的表面之上的包括至少一个光学传感器和/或一个光学发射器的至少一个电子部件、以及安装在衬底晶片的所述表面上以便形成电子部件所在的腔室的诸如上述限定的封装盖，封装盖的前壁位于电子部件前面。
电子部件可以穿过封装盖的内壁。
还提供了一种电子封装件，该封装件包括：衬底晶片、安装在衬底晶片的表面之上的包括至少一个光学传感器和/或一个光学发射器的至少两个电子部件、以及安装在衬底晶片的所述表面上以便形成电子部件分别所在的两个腔室的诸如上述限定的封装盖，封装盖的前壁位于电子部件前面。
根据本实用新型的实施例的用于电子封装件的封装盖以及电子封装件具有改进的结构和性能。
附图说明
现在将通过附图所示的示例性实施例来描述包括封装盖和制造模式的电子封装件，在附图中：
图1示出了沿着图2的I-I的电子封装件的纵向截面；
图2示出了沿着图1的II-II的图1的电子封装件的水平截面；
图3示出了沿着图2的III-III的图1的电子封装件的横向截面；
图4示出了在打开状态中在模具中制造封装盖的步骤；
图5示出了在闭合状态中在图4的模具中制造封装盖的另一步骤；
图6示出了在闭合状态中在图4的模具中制造封装盖的另一步骤；以及
图7示出了得自模具的封装盖的截面。
具体实施方式
图1至图3示出了电子封装件1，电子封装件1包括衬底晶片2和封装盖4，衬底晶片2包括从该晶片的一个表面到另一表面的电连接3的网络，封装盖4包括盖体5，盖体5由模制材料制成并且包括平行于衬底晶片2的前壁或正面壁6和向后延伸的外围壁7，外围壁7的后端边缘7a通过粘合剂珠9附接到衬底晶片2的正面8的外围区域，以便界定腔室10。
电子封装件1包括电子芯片11，电子芯片11安装在腔室10中并且具有与衬底晶片2的正面8接合的背面12，封装盖4与芯片11相距一定距离，前壁6位于电子芯片11前面。
根据所示的示例，芯片11在其正面13包括彼此纵向远离的两个光学传感器14和15。
封装盖4的盖体5包括从前壁6突出的横向内部分隔隔板16，并且连结外围壁7的两个相对侧。
内部分隔隔板16将腔室10分成两个腔室17和18，并且在一个位置处横跨芯片11，使得传感器14和15在腔室17和18内部位于任一侧并且与内部分隔隔板16相距一定距离。
内部分隔隔板16具有后边缘19，后边缘19设置有凹口20，芯片16穿过凹口20。粘合剂珠21被插入在后边缘19与衬底晶片2的正面8的位于芯片11的任一侧的区域之间以及凹口20与芯片11的正面13和侧面13a的区域之间。
芯片11通过电线22连接到衬底晶片2的电连接3的网络。
在芯片11旁边的接合到衬底晶片2的正面8的电子芯片23安装在腔室18内。芯片23在其正面24包括光辐射发射器25并且它通过电线26连接到电连接3的网络。
封装盖4的盖体5的前壁6具有贯通开口27和28，贯通开口27和28分别设置有允许光在腔室17和18与外部之间穿过的光学元件29和30。
衬底晶片2、封装盖4的盖体5、粘合剂珠9和粘合剂珠21由不透明材料制成。
电子封装件1可以以下面的方式操作。
芯片11的发射器25通过光学元件30向外发射光，例如红外辐射。存在于腔室18中的光辐射由芯片11的传感器15检测。芯片11的传感器14检测通过光学元件29的外部光辐射。
光学元件29和30可以由玻璃制成，并且它们中的任一个或两个可以被处理以便形成透镜和/或滤光器。例如，光学元件29可以被处理以便形成红外滤光器和用于将光朝向传感器14聚焦的光学透镜。
有利地，电子封装件1可以构成用于通过处理从传感器14和15产生的信号来检测封装盖4前面的主体的接近的装置。
封装盖4通过将盖体5包覆模制(overmolding)在光学元件29和30周围来获得。
光学元件29和30可以具有不同的轮廓和不同的厚度。
根据所示的示例，光学元件29是平行六面体，并且具有位于前壁6的正面6a的平面中的前面或正面31和相对于前壁6的背面6b向前设置(即，偏移)的背面32。盖体5的贯通通道27在光学元件29的背面的周边后面具有后内肩部33。
此外，光学元件30是平行六面体，并且具有相对于前壁6的正面6a向后设置(即，偏移)的正面34和在前壁6的背面6b的平面中的背面35。盖体5的贯通通道28在光学元件30的正面34的周边前面具有前内肩部36。
现在将描述通过晶片级包覆模制制造工艺产生的这种封装盖4的一个实施例。
如图4所示，模具100包括适合于在相邻位置103处的多个封装盖4的晶片级制造的下部部分101和上部部分102。
模具100的下部部分101包括基部104，基部104包括由粘合材料层106覆盖的上部平坦表面105，该层106具有平坦的上表面107。
在每个位置103处，光学元件29放置在模具100的下部部分101的表面107之上，光学元件29的表面31接合到模具10的部分101的粘合剂层106。
此外，包括由粘合材料制成的牺牲间隔物109的叠层108形成在模具100的下部部分101的表面107之上，并且光学元件30形成在牺牲间隔物109之上。间隔物109接合到粘合剂层106，并且光学元件30的表面34接合到牺牲间隔物109。
光学元件29和30被放置以便与要获得的封装盖4的光学元件相对应。
牺牲间隔物109的厚度对应于光学元件30的表面34与要获得的封装盖的壁6的正面之间的距离。
在牺牲间隔物109周围，在光学元件30的表面34与模具100的部分101的表面107之间形成有环形空隙110，该空隙对应于要获得的封装盖4的肩部36。
一旦完成，如图5所示，通过将模具100的上部部分102放置在下部部分101之上来闭合模具100。在该闭合位置，模具100在下部部分101的表面107与上部部分102的表面112之间界定腔室111。
在每个位置103处，尺寸和形状对应于要获得的封装盖4的盖体5。
更具体地，模具100的上部部分102的表面112具有平行于表面107的并且抵靠光学元件30的表面35而支撑的平坦表面113。
表面112另外具有纵向和横向延伸的并且与要获得的相邻封装盖4的外围壁7相对应的凹槽114，凹槽114的厚度略大于要获得的封装盖4的外围壁7的厚度的两倍。
表面112还具有对应于要获得的封装盖4的内壁16的凹槽115。
表面112另外具有突出的凸台116，凸台116的一个表面抵靠光学元件29的表面32而支撑，同时在光学元件29周围确定空隙117。
这样，如图6所示，涂层材料118(例如，环氧树脂)被共同注入腔室111中，并且允许涂层材料凝固以便将涂层材料118包覆模制在光学元件29和30周围并且获得模制晶片119，模制晶片119在每个位置103处包括设置有光学元件29和30的盖体5。
牺牲间隔物109的厚度确定光学元件30与凹槽114的底部之间的距离，并且因此确定光学元件30与在凹槽114中制成的外围壁6的附接端7a之间的距离。
接下来，从模具100中取出模制晶片119，并且如图7所示，去除牺牲间隔物109。然后，集合模制晶片119在位置103处包括通过它们的外围壁7连接的完成的封装盖4。
有利地，牺牲间隔物109可以由适合于在热的作用下去除的材料制成，或者由适合于在合适的光辐射的作用下去除的材料制成，导致材料的化学分解、剥离或收缩，除了潜在的清洗之外没有任何机械干预。
根据一个变型用途，将集合模制晶片119通过形成在凹槽114中的部分锯开，以便单片化封装盖4。
通过在某些位置处设置有电连接3的网络并且在这些位置处设置有芯片11和23的集合衬底晶片，通过粘合剂珠9和20将封装盖4放置在集合衬底晶片的每个位置上方。
接下来，在安装的封装盖4之间锯切集合衬底晶片。
然后获得多个单片化电子封装件1。
根据另一变型用途，通过在某些位置处设置有电连接3的网络并且在这些位置处设置有芯片11和23的集合衬底晶片，将集合模制晶片119放置在该集合衬底晶片上。
接下来，锯切集合衬底晶片和集合模制晶片119。
然后获得多个单片化电子封装件1。
根据电子封装件1的一个变型实施例，省略了容纳光学元件30的贯通通道28的肩部36。在这种情况下，在模具100中，牺牲间隔物109覆盖光学元件30的表面34。
根据电子封装件1的一个变型实施例，光学元件29以与光学元件30等效的方式被定位。在这种情况下，光学元件29通过与牺牲间隔物109等效的牺牲间隔物来被放置在模具100的下部部分101的表面107之上，省略了模具100的下部部分102的凸台116。
根据一个变型实施例，光学元件30可以向后延伸超过前壁6的背面6b。在这种情况下，模具100的上部部分102的表面112包括空隙，光学元件30的背面抵靠该空隙的底部。
根据电子封装件1的一个变型实施例，等效电子封装件包括单独的芯片，其分别完全位于由通过包覆模制允许光进出腔室的光学元件而提供的封装盖的内壁界定的腔室内。
根据电子封装件1的一个变型实施例，等效电子封装件包括用于设置有发射器或光辐射传感器的芯片的封装盖，该封装盖以与光学元件30相同的方式设置有围绕单个光学元件包覆模制的盖体。

Claims (16)

1.一种用于电子封装件的封装盖，其特征在于，包括：
盖体，包括设置有允许光通过的光学元件的前壁；
其中所述前壁包括贯通通道，所述光学元件通过包覆模制被插入所述贯通通道内；以及
其中所述光学元件具有相对于所述前壁的正面向后地被设置的正面。
2.根据权利要求1所述的封装盖，其特征在于，所述盖体包括相对于所述前壁突出的外围壁。
3.根据权利要求1所述的封装盖，其特征在于，所述盖体包括相对于所述前壁突出以界定第一腔室和第二腔室的内壁，所述贯通通道面向所述第一腔室；并且所述前壁进一步包括面向所述第二腔室的另外的贯通通道，另外的光学元件通过包覆模制被插入所述另外的贯通通道内。
4.根据权利要求3所述的封装盖，其特征在于，所述另外的光学元件具有与所述前壁的所述正面共面的正面。
5.根据权利要求4所述的封装盖，其特征在于，所述另外的光学元件的背面相对于所述前壁的背面向后地被设置。
6.根据权利要求1所述的封装盖，其特征在于，所述光学元件的背面相对于所述前壁的背面共面。
7.一种电子封装件，其特征在于，包括：
衬底晶片；
至少一个电子部件，被安装在所述衬底晶片的表面之上；以及
封装盖，被安装在所述衬底晶片的所述表面上以便形成腔室，所述至少一个电子部件位于所述腔室中；
其中所述封装盖包括：
盖体，包括设置有允许光通过的光学元件的前壁；
其中所述前壁包括贯通通道，所述光学元件通过包覆模制被插入所述贯通通道中；以及
其中所述光学元件具有相对于所述前壁的正面向后地被设置的正面；
所述封装盖的所述前壁位于所述电子部件前面。
8.根据权利要求7所述的封装件，其特征在于，所述至少一个电子部件包括至少一个光学传感器和/或一个光学发射器。
9.根据权利要求7所述的封装件，其特征在于，所述至少一个电子部件穿过所述封装盖的内壁。
10.根据权利要求7所述的封装件，其特征在于，所述盖体包括相对于所述前壁突出的外围壁。
11.根据权利要求7所述的封装件，其特征在于，所述盖体包括相对于所述前壁突出以界定第一腔室和第二腔室的内壁，所述贯通通道面向所述第一腔室；并且所述前壁进一步包括面向所述第二腔室的另外的贯通通道，另外的光学元件通过包覆模制被插入所述另外的贯通通道内。
12.根据权利要求11所述的封装件，其特征在于，所述另外的光学元件具有与所述前壁的所述正面共面的正面。
13.根据权利要求12所述的封装件，其特征在于，所述另外的光学元件的背面相对于所述前壁的背面向后地被设置。
14.根据权利要求11所述的封装件，其特征在于，所述至少一个电子部件至少部分地位于所述第一腔室内。
15.根据权利要求11所述的封装件，其特征在于，所述至少一个电子部件完全位于所述第二腔室内。
16.根据权利要求7所述的封装件，其特征在于，所述光学元件的背面相对于所述前壁的背面共面。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109768093A (zh) * 2017-11-06 2019-05-17 意法半导体(格勒诺布尔2)公司 用于电子封装件的封装盖和制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
FR3075466B1 (fr) 2017-12-15 2020-05-29 Stmicroelectronics (Grenoble 2) Sas Couvercle de boitier de circuit electronique
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FR3075465B1 (fr) 2017-12-15 2020-03-27 Stmicroelectronics (Grenoble 2) Sas Couvercle de boitier de circuit electronique
US11302682B2 (en) * 2019-10-25 2022-04-12 Advanced Semiconductor Engineering, Inc. Optical device package
US11974419B1 (en) * 2023-06-13 2024-04-30 Stmicroelectronics International N.V. Method, systems, and apparatuses for electromagnetic shielding

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
FR2977715A1 (fr) * 2011-07-08 2013-01-11 St Microelectronics Grenoble 2 Boitier electronique optique
WO2013047683A1 (ja) * 2011-09-30 2013-04-04 コニカミノルタアドバンストレイヤー株式会社 撮像レンズユニットの製造方法
FR2988519A1 (fr) * 2012-03-22 2013-09-27 St Microelectronics Grenoble 2 Boitier electronique optique
GB2505675A (en) * 2012-09-06 2014-03-12 St Microelectronics Pte Ltd A cover for a sensor package with two transparent portions
US9094593B2 (en) * 2013-07-30 2015-07-28 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
US10455131B2 (en) * 2015-01-26 2019-10-22 Omnivision Technologies, Inc. Wafer-level methods for packing camera modules, and associated camera modules
FR3073356A1 (fr) * 2017-11-06 2019-05-10 Stmicroelectronics (Grenoble 2) Sas Capot d'encapsulation pour boitier electronique et procede de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109768093A (zh) * 2017-11-06 2019-05-17 意法半导体(格勒诺布尔2)公司 用于电子封装件的封装盖和制造方法

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