CN208738235U - Fan-out-type antenna packages structure - Google Patents
Fan-out-type antenna packages structure Download PDFInfo
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- CN208738235U CN208738235U CN201821346487.9U CN201821346487U CN208738235U CN 208738235 U CN208738235 U CN 208738235U CN 201821346487 U CN201821346487 U CN 201821346487U CN 208738235 U CN208738235 U CN 208738235U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
The utility model provides a kind of fan-out-type antenna packages structure, and the encapsulating structure includes: re-wiring layer；The first metal connecting column on the second face of re-wiring layer；First antenna metal layer on the first metal connecting column；The semiconductor chip being electrically connected with re-wiring layer；Cover re-wiring layer, the first metal connecting column, first antenna metal layer and semiconductor chip and the first encapsulated layer for appearing first antenna metal layer and adhesive layer；The second metal connecting column on first antenna metal layer；The second antenna metal layer being electrically connected on the second metal connecting column and with the second metal connecting column；Cover the second metal connecting column and the second antenna metal layer and the second encapsulated layer for appearing the second antenna metal layer；And the metal coupling positioned at the first face of re-wiring layer.The utility model realizes the integration of stacked antenna metal layer, effectively diminution encapsulation volume, integrated level with higher and electrical stability.
Description
Technical field
The utility model relates to technical field of semiconductor encapsulation, more particularly to a kind of fan-out-type antenna packages structure.
Background technique
It is more inexpensive, more reliable, faster and more highdensity circuit be integrated antenna package pursue target.In future,
Integrated antenna package will improve the integration density of various electronic components by constantly reducing minimum feature size.Currently, often
Packaging method includes: wafer level chip scale encapsulation (Wafer Level Chip Scale Packaging, WLCSP),
Fan-out-type wafer-level packaging (Fan-Out Wafer Level Package, FOWLP), flip-chip (Flip Chip), lamination
Encapsulate (Package on Package, POP) etc..Wherein, fan-out-type wafer-level packaging is due to its input/output end port (I/
O) more, integrated flexibility is preferable, it has also become one of packaging method relatively advanced at present.
With universal and people's demand the increase of high-tech electronic product, especially for the mobile need of cooperation people
It asks, currently, high-tech electronic product both increases the function of wireless telecommunications mostly.
In general, existing antenna structure is usually the surface that antenna is directly made in circuit board, this practice meeting
Antenna is allowed to occupy additional board area, conformability is poor.For various high-tech electronic products, biggish electricity is used
Road plate indicates that high-tech electronic product occupies biggish volume, this is with people to the miniaturization of high-tech electronic product, convenient
The demand of formula is disagreed, and therefore, how to reduce the area of circuit board shared by antenna, reduces the volume of antenna packages structure to improve
The integration performance of antenna packages structure will be overcome the problems, such as needed for these electronic devices.
In consideration of it, it is necessary to design a kind of face that new fan-out-type antenna packages structure occupies circuit board for solving antenna
The caused above-mentioned technical problem of product.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of fan-out-type antenna packages
Structure, occupies the area of circuit board for solving antenna in the prior art, and caused antenna packages structural volume is big, conformability
The problem of difference.
In consideration of it, the utility model provides a kind of fan-out-type antenna packages structure, comprising:
Re-wiring layer, the re-wiring layer include opposite the first face and the second face；
First metal connecting column electrically connects on the second face of the re-wiring layer, and with the re-wiring layer
It connects；
First antenna metal layer is located on the first metal connecting column, and electrically connects with the first metal connecting column
It connects；
Semiconductor chip is electrically connected on the second face of the re-wiring layer, and with the re-wiring layer；
First encapsulated layer covers the re-wiring layer, the first metal connecting column, first antenna metal layer and semiconductor core
Piece, and first encapsulated layer appears the first antenna metal layer and is bonded in the adhesive layer of the semiconductor chip；
Second metal connecting column is located on the first antenna metal layer, and electrically connects with the first antenna metal layer
It connects；
Second antenna metal layer is located on the second metal connecting column, and electrically connects with the second metal connecting column
It connects；
Second encapsulated layer covers the second metal connecting column and the second antenna metal layer, and second encapsulated layer is aobvious
Reveal the second antenna metal layer；And
Metal coupling, on the first face of the re-wiring layer.
Optionally, the semiconductor chip further includes the chip metal being connected with the contact pad of the semiconductor chip
Portion, the chip metal portion includes one of metal column and metal ball.
Optionally, the side in the chip metal portion is coated by the re-wiring layer.
Optionally, the adhesive layer includes one of epoxy resin layer and polymer film layer.
It optionally, further include the connection of the first metal between the first metal connecting column and the first antenna metal layer
Block, and the cross-sectional area of the first metal link block is greater than the first metal connecting column；The second metal connecting column with
It further include the second metal link block between the second antenna metal layer, and the cross-sectional area of the second metal link block is greater than
The second metal connecting column.
Optionally, first encapsulated layer includes one of epoxy resin layer, polyimide layer and layer of silica gel；Described
Two encapsulated layers include one of epoxy resin layer, polyimide layer and layer of silica gel.
Optionally, the re-wiring layer includes the patterned dielectric layer and patterned metal line stacked gradually
Layer.
Optionally, the dielectric layer includes epoxy resin layer, layer of silica gel, PI layers, PBO layers, bcb layer, silicon oxide layer, phosphorus silicon
Glassy layer, the combination of one or more of fluorine-containing glassy layer, the metal wiring layer includes layers of copper, aluminium layer, nickel layer, gold
The combination of one or more of layer, silver layer, titanium layer.
Optionally, the metal coupling includes in copper metal convex block, nickel metal coupling, tin metal convex block and silver metal convex block
One kind.
The utility model also provides a kind of fan-out-type antenna packages method, comprising the following steps:
S1: a support substrate is provided, forms separating layer in Yu Suoshu support substrate；
The second antenna metal layer is formed in S2: Yu Suoshu separating layer；
The second metal connecting column is formed on S3: Yu Suoshu second antenna metal layer；
S4: encapsulating the second antenna metal layer and the second metal connecting column using the second encapsulated layer, and makes described the
Two encapsulated layers appear the second metal connecting column；
First antenna metal layer, and the first antenna metal layer and described the are formed on S5: Yu Suoshu second encapsulated layer
Two metal connecting columns are electrically connected；
The first metal connecting column is formed on S6: Yu Suoshu first antenna metal layer；
S7: semiconductor chip is provided, the semiconductor chip is engaged on second encapsulated layer, wherein described half
Conductor chip further includes the chip metal portion being connected with the contact pad of the semiconductor chip；
S8: encapsulating the first antenna metal layer, the first metal connecting column and semiconductor chip using the first encapsulated layer, and
So that first encapsulated layer appears the first metal connecting column and chip metal portion；
Re-wiring layer is formed on S9: Yu Suoshu first encapsulated layer, the re-wiring layer includes and first encapsulation
The second face and the first opposite face that layer is in contact, the re-wiring layer and the first metal connecting column and chip metal portion
It is electrically connected；
Metal coupling is formed on S10: Yu Suoshu re-wiring layer；And
S11: the support substrate is removed based on the separating layer.
Optionally, the support substrate includes glass substrate, metal substrate, semiconductor substrate, polymer substrate and ceramics
One of substrate；The separating layer includes one of adhesive tape and polymeric layer, and the curing method of the polymeric layer includes
One of ultraviolet curing method and thermal curing method.
Optionally, the method that second encapsulated layer is formed in step S4 includes compression forming, Transfer molding, fluid-tight
One of molding, vacuum lamination and spin coating；The method that first encapsulated layer is formed in step S8 includes compression forming, transmitting
One of molded, fluid-tight molding, vacuum lamination and spin coating.
Optionally, the second metal connecting column is formed in step S3 the following steps are included:
The second metal link block, the second metal link block and institute are formed on S3-1: Yu Suoshu second antenna metal layer
State the electric connection of the second antenna metal layer；
S3-2: forming the second metal connecting column in the upper surface of the second metal link block using bonding wire craft,
And the cross-sectional area of the second metal link block is greater than the second metal connecting column.
Optionally, the first metal connecting column is formed in step S6 the following steps are included:
The first metal link block, the first metal link block and institute are formed on S6-1: Yu Suoshu first antenna metal layer
State the electric connection of first antenna metal layer；
S6-2: forming the first metal connecting column in the upper surface of the first metal link block using bonding wire craft,
And the cross-sectional area of the first metal link block is greater than the first metal connecting column.
Optionally, form the re-wiring layer in step S9 the following steps are included:
S9-1: using physical gas-phase deposition or chemical vapor deposition process in forming medium on first encapsulated layer
Layer, and the dielectric layer is performed etching to form patterned dielectric layer；
S9-2: physical gas-phase deposition, chemical vapor deposition process, evaporation process, sputtering technology, electroplating technology are used
Or chemical plating process is in forming metal wiring layer on the patterned dielectric layer, and performs etching shape to the metal wiring layer
At patterned metal wiring layer.
It optionally, further include that the n times circulation step formed is combined by the step S9-1 and step S9-2 in step S9,
Middle N >=1.
The fan-out-type antenna packages structure of the utility model, has the advantages that
1) the utility model realizes the integration of stacked antenna metal layer using re-wiring layer and metal connecting column, mentions significantly
The efficiency and performance of high antenna improve the conformability of antenna packages structure；
2) semiconductor chip is placed in encapsulated layer by the utility model, and antenna metal layer and is bonded in semiconductor chip
Adhesive layer has same level, spatial volume is saved, so that the volume of encapsulating structure is smaller；Encapsulated layer is to metal connecting column
And antenna metal layer realizes the encapsulation to semiconductor chip, improves the stability of semiconductor chip while be packaged, and saves
Cost；
3) the utility model is initially formed metal connecting column before engaging semiconductor chip, improves metal connecting column and day
The cleanliness on line metal layer joint surface improves the stability of metal connecting column；
4) the utility model directly forms re-wiring layer on encapsulated layer, while realizing to metal connecting column and semiconductor
The electric connection of chip reduces process complexity；
5) the utility model antenna metal layer is respectively positioned in encapsulated layer, can further reduce the volume of encapsulating structure, and
Support substrate is removed based on separating layer in final step, improves the cleanliness and electrical property stability of encapsulating structure；
6) the utility model uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that day
Wire encapsulation construction integrated level with higher and better encapsulation performance, before field of semiconductor package has a wide range of applications
Scape.
Detailed description of the invention
Fig. 1 is shown as the flow diagram of fan-out-type antenna packages method in the utility model.
Fig. 2~Figure 14 is shown as the structural schematic diagram that each step of antenna packages method is presented in the utility model, wherein
Figure 14 is the structural schematic diagram of fan-out-type antenna packages structure in the utility model.
Component label instructions
101 support substrates
102 separating layers
103 re-wiring layers
113 dielectric layers
123 metal wiring layers
104 first metal connecting columns
114 first metal link blocks
105 semiconductor chips
115 chip metal portions
125 adhesive layers
106 first encapsulated layers
107 first antenna metal layers
108 second metal connecting columns
118 second metal link blocks
109 second encapsulated layers
110 second antenna metal layers
111 metal couplings
S1~S11 step
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 1~Figure 14.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in schema then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
As shown in figure 14, the utility model provides a kind of fan-out-type antenna packages structure, and the encapsulating structure includes: again
Wiring layer 103, the first metal connecting column 104, semiconductor chip 105, the first encapsulated layer 106, first antenna metal layer 107,
Two metal connecting columns 108, the second encapsulated layer 109, the second antenna metal layer 110 and metal coupling 111.
Specifically, the re-wiring layer 103 includes opposite the first face and the second face, the first metal connecting column
104 are located on the second face of the re-wiring layer 103, and are electrically connected with the re-wiring layer 103；The first antenna
Metal layer 107 is located on the first metal connecting column 104, and is electrically connected with the first metal connecting column 104；Described half
Conductor chip 105 is located on the second face of the re-wiring layer 103, and is electrically connected with the re-wiring layer 103；It is described
First encapsulated layer 106 covers the re-wiring layer 103, the first metal connecting column 104, first antenna metal layer 107 and partly leads
Body chip 105, and first encapsulated layer 106 appears the first antenna metal layer 107 and is bonded in the semiconductor chip
105 adhesive layer 125；The second metal connecting column 108 is located on the first antenna metal layer 107, and with described first
Antenna metal layer 107 is electrically connected；The second antenna metal layer 110 is located on the second metal connecting column 108, and with institute
State the electric connection of the second metal connecting column 108；Second encapsulated layer 109 covers the second metal connecting column 108 and second
Antenna metal layer 110, and second encapsulated layer 109 appears the second antenna metal layer 110；The metal coupling 111, position
It is electrically connected on the first face of the re-wiring layer 103, and with the re-wiring layer 103.In the present embodiment, using institute
It states re-wiring layer 103, the first metal connecting column 104 and the second metal connecting column 108 and realizes the first antenna metal layer 107
And second antenna metal layer 110 integration, the efficiency of antenna and the conformability of performance and antenna packages structure can be improved；By institute
It states semiconductor chip 105 to be placed in first encapsulated layer 106, and the first antenna metal layer 107 and the adhesive layer 125
With same level, spatial volume is further saved, so that the volume of encapsulating structure further reduces；The first antenna gold
Belong to layer 107 and the second antenna metal layer 110 is located in first encapsulated layer 106 and the second encapsulated layer 109, it can be further
The volume of encapsulating structure is reduced, the integrated level and encapsulation performance of antenna packages structure are improved.
As the further embodiment of the embodiment, the re-wiring layer 103 includes patterned Jie stacked gradually
Matter layer 113 and patterned metal wiring layer 123.Further, the dielectric layer 113 includes epoxy resin layer, layer of silica gel, PI
Layer, PBO layers, bcb layer, silicon oxide layer, phosphorosilicate glass layer, the combination of one or more of fluorine-containing glassy layer, the metal
Wiring layer 123 is combined including one or more of layers of copper, aluminium layer, nickel layer, layer gold, silver layer, titanium layer.The rewiring
The specific number of plies and type of the dielectric layer 113 and metal wiring layer 123 in layer 103, do not limit excessively herein.
As the further embodiment of the embodiment, the first metal connecting column 104 and the first antenna metal layer
It further include the first metal link block 114 between 107, the preferably described first metal connecting column 104 is located at first metal company
The symmetrical centre of block 114 is connect, and the cross-sectional area of the first metal link block 114 is greater than the first metal connecting column 104,
To increase the contact area of the first metal link block 114 and the first antenna metal layer 107, improves and electrically stablize
Property.
As shown in figure 14, the first metal connecting column 104 is located on the second face of the re-wiring layer 103, passes through
The first metal link block 114 is connected with the first antenna metal layer 107.Further, the first metal connection
The material of column 104 and the first metal link block 114 includes one of Au, Ag, Cu and Al or combination, is not made herein excessively
Limitation.
As the further embodiment of the embodiment, the semiconductor chip 105 further includes and the semiconductor chip 105
The chip metal portion 115 that is connected of contact pad (not shown), the chip metal portion 115 includes in metal column and metal ball
One kind, and realize by the chip metal portion 115 electrical property of the semiconductor chip 105 with the re-wiring layer 103
Connection.Electricity connection end of the chip metal portion 115 as the semiconductor chip 105 is convenient for technological operation, is avoided in institute
State on the contact pad of semiconductor chip 105 carry out bonding wire technique, thus improve the semiconductor chip 105 stability and
Yield.
As shown in figure 14, the chip metal portion 115 includes the metal column with certain altitude, the metal column
Altitude range includes 25 μm~250 μm, and the material of the metal column includes one of copper, nickel, tin and silver.The semiconductor core
The number and type of piece 105 are herein with no restriction.
As the further embodiment of the embodiment, the side in the chip metal portion 115 is by the re-wiring layer 103
In the dielectric layer 113 coated.Since the side in the chip metal portion 115 with certain altitude is by the dielectric layer
113 are coated, electrically steady between the semiconductor chip 105 and the re-wiring layer 103 so as to further, enhance
It is qualitative.
As the further embodiment of the embodiment, the adhesive layer 125 for being bonded in the semiconductor chip 105 is revealed in institute
The first encapsulated layer 106 is stated, second encapsulated layer 109 is engaged in, by the adhesive layer 125 by the semiconductor chip 105
It is fixed on second encapsulated layer 109.The adhesive layer 125 includes one of epoxy resin layer and polymer film layer,
Such as metal DAF film, metallic conduction glue.
As the further embodiment of the embodiment, first encapsulated layer 106 includes epoxy resin layer, polyimide layer
And one of layer of silica gel, the surface that first encapsulated layer 106 is in contact with the re-wiring layer 103 be by grinding or
The flat surface of polishing, to improve the first metal connecting column 104 and the semiconductor chip 105 and the re-wiring layer
103 contact performance.The material of the first antenna metal layer 107 can be for Au, Cu etc., and the first antenna metal layer
107, according to performance requirement, can have a variety of different figures, herein with no restrictions.As shown in figure 14, the first antenna gold
Belong to layer 107 to be formed in first encapsulated layer 106.
Second metal as the further embodiment of the embodiment, on the first antenna metal layer 107
It further include the second metal link block 118 between connecting column 108 and the second antenna metal layer 110, and second metal connects
The cross-sectional area for connecing block 118 is greater than the second metal connecting column 108.The preferably described second metal connecting column 108 is located at institute
The symmetrical centre of the second metal link block 118 is stated, to increase the second metal link block 118 and second antenna metal
The contact area of layer 110 improves electrical stability.Further, the second metal connecting column 108 and second metal connect
The material for connecing block 118 includes one of Au, Ag, Cu and Al or combination, is not limited excessively herein.
As the further embodiment of the embodiment, the height of the second metal connecting column 108 is less than first gold medal
The height for belonging to connecting column 104, to further reduce the volume of the encapsulating structure.
Specifically, second encapsulated layer 109 includes one of epoxy resin layer, polyimide layer and layer of silica gel, institute
The contact surface for stating the second encapsulated layer 109 and first encapsulated layer 106 is by grinding or the flat surface polished, to improve
State the contact performance of the second metal connecting column 108 and first metal connecting layer 107.The second antenna metal layer 110
Material can be Au, Cu etc., and the second antenna metal layer 110 can have a variety of different figures according to performance requirement,
Herein with no restrictions.As shown in figure 14, the second antenna metal layer 110 is formed in second encapsulated layer 109, can be into one
Step reduces the volume of encapsulating structure, and the cleanliness and electric performance stablity of encapsulating structure can be improved.
As the further embodiment of the embodiment, the metal coupling 111 include copper metal convex block, nickel metal coupling,
One of tin metal convex block and silver metal convex block.The metal coupling 111, which may also include, is connected to the metal coupling 111
Cylindrical metal, herein with no restriction.
As shown in figure 14, the semiconductor chip 105 passes through the re-wiring layer 103, the first metal connecting column
104 and the second metal connecting column 108 and the first antenna metal layer 107 and 110 electricity of the second antenna metal layer
Property connection to realize the function of antenna according to the structure, more metal connecting columns, encapsulated layer and antenna gold can be passed through
Belong to the antenna packages structure that layer realizes more numbers of plies, herein with no restriction.To further realize the whole of stacked antenna metal layer
It closes, greatly improves the efficiency and performance of antenna, further increase the conformability of antenna packages structure, reduce encapsulation volume, so that
Antenna packages structure integrated level with higher.
As shown in Figure 1, the present embodiment also provides a kind of fan-out-type antenna packages method, comprising the following steps:
S1: a support substrate is provided, forms separating layer in Yu Suoshu support substrate；
The second antenna metal layer is formed in S2: Yu Suoshu separating layer；
The second metal connecting column is formed on S3: Yu Suoshu second antenna metal layer；
S4: encapsulating the second antenna metal layer and the second metal connecting column using the second encapsulated layer, and makes described the
Two encapsulated layers appear the second metal connecting column；
First antenna metal layer, and the first antenna metal layer and described the are formed on S5: Yu Suoshu second encapsulated layer
Two metal connecting columns are electrically connected；
The first metal connecting column is formed on S6: Yu Suoshu first antenna metal layer；
S7: semiconductor chip is provided, the semiconductor chip is engaged on second encapsulated layer, wherein described half
Conductor chip further includes the chip metal portion being connected with the contact pad of the semiconductor chip；
S8: encapsulating the first antenna metal layer, the first metal connecting column and semiconductor chip using the first encapsulated layer, and
So that first encapsulated layer appears the first metal connecting column and chip metal portion；
Re-wiring layer is formed in S9: Yu Suoshu first encapsulation layer surface, the re-wiring layer includes and described first
The second face and the first opposite face that encapsulated layer is in contact, the re-wiring layer and the first metal connecting column and chip gold
Category portion is electrically connected；
Metal coupling is formed on first face of S10: Yu Suoshu re-wiring layer；And
S11: the support substrate is removed based on the separating layer.
Specifically, first encapsulated layer is to the first metal connecting column and first antenna metal in the present embodiment
Layer realizes the encapsulation to the semiconductor chip while be packaged, and improves the stability of the semiconductor chip, save at
This；Before engaging the semiconductor chip, be initially formed the first metal connecting column, improve the first metal connecting column with
The stability of the first metal connecting column can be improved in the cleanliness on first antenna metal layer joint surface；Described first
The re-wiring layer is directly formed on encapsulated layer, while realizing the electrical property to the first metal connecting column and semiconductor chip
Connection reduces process complexity；The first antenna metal layer and the second antenna metal layer are located at first encapsulated layer
And second in encapsulated layer, can further reduce the volume of encapsulating structure, and remove institute based on the separating layer in final step
Support substrate is stated, the cleanliness and electrical property stability of encapsulating structure are improved；It, can using fan-out package method encapsulating antenna structure
Encapsulation volume is effectively reduced, so that antenna packages structure integrated level with higher and better encapsulation performance.Such as Fig. 2~14
It is shown, illustrate the structural schematic diagram that each step of antenna packages method is presented in the utility model.
As shown in Fig. 2, carrying out step S1 first, a support substrate 101 is provided, is formed and is divided in Yu Suoshu support substrate 101
Absciss layer 102.
As the further embodiment of the embodiment, the support substrate 101 includes glass substrate, metal substrate, partly leads
One of body substrate, polymer substrate and ceramic substrate.In the present embodiment, the support substrate 101 is preferably glass lined
Bottom, cost is relatively low for the glass substrate, is easy to be formed on its surface the separating layer 102, and can reduce subsequent stripping technology
Difficulty.
As the further embodiment of the embodiment, the separating layer 102 includes one of adhesive tape and polymeric layer, institute
State polymeric layer uses spin coating proceeding to be coated on 101 surface of support substrate first, then uses ultra-violet curing or heat cure
Technique makes its curing molding.
Specifically, the separating layer 102 selects the polymeric layer of LTHC photothermal transformation layer, so that subsequent in the present embodiment
Step S11 can heat the LTHC photothermal transformation layer based on laser, so that the support substrate 101 is from the LTHC
It is separated from each other at photothermal transformation layer.
As shown in figure 3, then carrying out step S2, the second antenna metal layer 110 is formed in Yu Suoshu separating layer 102.
Specifically, physical gas-phase deposition, chemical vapor deposition process, evaporation process, sputtering technology, electricity can be used first
Then depositing process or chemical plating process use etching technics in forming the second antenna metal layer 110 in the separating layer 102
Patterned second antenna metal layer 110 needed for being formed.
As shown in figure 4, then carrying out step S3, the second metal connecting column is formed on the second antenna metal of Yu Suoshu layer 110
108, and the second metal connecting column 108 and the second antenna metal layer 110 are electrically connected.
As the further embodiment of the embodiment, it includes following that the second metal connecting column 108 is formed in step S3
Step:
The second metal link block 118, the second metal connection are formed on S3-1: Yu Suoshu second antenna metal layer 110
Block 118 and the second antenna metal layer 110 are electrically connected；
S3-2: second metal is formed in the upper surface of the second metal link block 118 using bonding wire craft and is connected
Column 108, and the cross-sectional area of the second metal link block 118 is greater than the second metal connecting column 108, preferably described the
Two metal connecting columns 108 are located at the symmetrical centre of the second metal link block 118, to increase the second metal link block
118 with the contact area of the second antenna metal layer 110, improve electrical stability.
Specifically, the bonding wire craft includes hot pressing bonding wire craft, supersonic welding Wiring technology and thermosonic bonding wire work
One of skill；The material of the second metal connecting column 108 and the second metal link block 118 includes in Au, Ag, Cu, Al
A kind of or combination.
As shown in Fig. 5~6, step S4 is then carried out, the second antenna metal layer is encapsulated using the second encapsulated layer 109
110 and the second metal connecting column 108, and second encapsulated layer 109 is made to appear the second metal connecting column 108.
As the further embodiment of the embodiment, the method that second encapsulated layer 109 is formed in step S4 includes pressure
Shorten one of type, Transfer molding, fluid-tight molding, vacuum lamination and spin coating, the material packet of second encapsulated layer 109 into
Include one of polyimides, silica gel and epoxy resin.
Specifically, after forming second encapsulated layer 109, further include acted on using the method for grinding or polishing it is described
The first antenna metal being subsequently formed is improved to provide smooth second encapsulated layer 109 in the surface of second encapsulated layer 109
Electric connection between layer 107 and the second metal connecting column 108.
As shown in fig. 7, step S5 is then carried out, shape first antenna metal layer 107 on the second encapsulated layer of Yu Suoshu 109, and
The first antenna metal layer 107 is electrically connected with the second metal connecting column 108.
Specifically, physical gas-phase deposition, chemical vapor deposition process, evaporation process, sputtering technology, electricity can be used first
Depositing process or chemical plating process are in forming the first antenna metal layer 107 on second encapsulated layer 109, then using etching
Technique forms required patterned first antenna metal layer 107.
As shown in figure 8, then carrying out step S6, the first metal connecting column is formed on Yu Suoshu first antenna metal layer 107
104, and the first metal connecting column 104 and the first antenna metal layer 107 are electrically connected.
As the further embodiment of the embodiment, it includes following that the first metal connecting column 104 is formed in step S6
Step:
The first metal link block 114, the first metal connection are formed on S6-1: Yu Suoshu first antenna metal layer 107
Block 114 and the first antenna metal layer 107 are electrically connected；
S6-2: first metal is formed in the upper surface of the first metal link block 114 using bonding wire craft and is connected
Column 104, and the cross-sectional area of the first metal link block 114 is greater than the first metal connecting column 104.Preferably described
One metal connecting column 104 is located at the symmetrical centre of the first metal link block 114, to increase the first metal link block
114 with the contact area of the first antenna metal layer 107, improve electrical stability.
As shown in figure 9, then carrying out step S7, semiconductor chip 105 is provided, the semiconductor chip 105 is engaged in
On second encapsulated layer 109, wherein the semiconductor chip 105 further includes the contact pad with the semiconductor chip 105
The chip metal portion 115 being connected.
Specifically, the chip metal portion 115 includes having one of metal column and metal ball of certain altitude, it is described
Electricity connection end of the chip metal portion 115 as the semiconductor chip 105 is convenient for technological operation, is avoided in the semiconductor
The technique that bonding wire is carried out on the contact pad of chip 105, to improve the stability and yield of the semiconductor chip 105.Institute
The material for stating chip metal portion 115 includes one of copper, nickel, tin and silver.In the present embodiment, the chip metal portion 115 is adopted
With the metal column, and the altitude range of the metal column includes 25 μm~250 μm.The number of the semiconductor chip 105 and
Type is herein with no restriction.
As the further embodiment of the embodiment, the semiconductor chip 105 is bonded in described the by adhesive layer 125
On the surface of two encapsulated layers 109, the adhesive layer 125 includes one of epoxy resin layer and polymer film layer.Such as metal
DAF film, metallic conduction glue etc..
As shown in Figure 10~11, step S8 is then carried out, the first antenna metal layer is encapsulated using the first encapsulated layer 106
107, the first metal connecting column 104 and semiconductor chip 105, and first encapsulated layer 106 is made to appear first metal
Connecting column 104 and chip metal portion 115.
As the further embodiment of the embodiment, the method that first encapsulated layer 106 is formed in step S8 includes pressure
Shorten one of type, Transfer molding, fluid-tight molding, vacuum lamination and spin coating, the material packet of first encapsulated layer 106 into
Include one of polyimides, silica gel and epoxy resin.
Specifically, after forming first encapsulated layer 106, further include acted on using the method for grinding or polishing it is described
The re-wiring layer 103 being subsequently formed is improved to provide smooth first encapsulated layer 106 in the surface of first encapsulated layer 106
With the electric connection in the first metal connecting column 104 and chip metal portion 115.
As shown in figure 12, step S9 is then carried out, forms re-wiring layer 103 on 106 surface of the first encapsulated layer of Yu Suoshu,
The re-wiring layer 103 includes the second face being in contact with first encapsulated layer 106 and the first opposite face, it is described again
Wiring layer 103 and the first metal connecting column 104 and chip metal portion 115 are electrically connected.
As the further embodiment of the embodiment, the re-wiring layer 103 is formed in step S9 the following steps are included:
S9-1: it is formed using physical gas-phase deposition or chemical vapor deposition process on first encapsulated layer 106
Dielectric layer 113, and the dielectric layer 113 is performed etching to form patterned dielectric layer 113；
S9-2: physical gas-phase deposition, chemical vapor deposition process, evaporation process, sputtering technology, electroplating technology are used
Or chemical plating process is in forming metal wiring layer 123 on the patterned dielectric layer 113, and to the metal wiring layer 123
It performs etching to form patterned metal wiring layer 123.
It further include being combined by the step S9-1 and step S9-2 as the further embodiment of the embodiment, in step S9
The n times circulation step of formation, wherein N >=1.
As the further embodiment of the embodiment, the side in the chip metal portion 115 is by the re-wiring layer 103
In the dielectric layer 113 coated.Since the side in the chip metal portion 115 with certain altitude is by the dielectric layer
113 are coated, electrically steady between the semiconductor chip 105 and the re-wiring layer 103 so as to further, enhance
It is qualitative.
As shown in figure 13, step S10 is then carried out, forms metal coupling on the first face of Yu Suoshu re-wiring layer 103
111。
Specifically, it is convex to form the metal on the metal wiring layer 123 on the encapsulating structure obtained in step s 9
Block 111.The metal coupling 111 includes one of tin solder, silver solder and gold-tin eutectic solder.The metal coupling 111
It may also include the cylindrical metal for being connected to the metal coupling 111, the re-wiring layer 103 may include graphical described in multilayer
Dielectric layer 113 and patterned metal wiring layer 123, herein with no restriction.
As shown in figure 14, step S11 is finally carried out, the support substrate 101 is removed based on the separating layer 102.
Specifically, being heated based on laser to the LTHC photothermal transformation layer, so that the support substrate 101 is described in
It is separated from each other at LTHC photothermal transformation layer.
In conclusion the fan-out-type antenna packages structure of the utility model, has the advantages that
1) the utility model realizes the integration of stacked antenna metal layer using re-wiring layer and metal connecting column, mentions significantly
The efficiency and performance of high antenna improve the conformability of antenna packages structure；
2) semiconductor chip is placed in encapsulated layer by the utility model, and the adhesive layer of antenna metal layer and semiconductor chip
With same level, spatial volume is saved, so that the volume of encapsulating structure is smaller；Encapsulated layer is to metal connecting column and antenna
While metal layer is packaged, realizes the encapsulation to semiconductor chip, improve stability, the save the cost of semiconductor chip；
3) the utility model is initially formed metal connecting column before engaging semiconductor chip, improves metal connecting column and day
The cleanliness on line metal layer joint surface improves the stability of metal connecting column；
4) the utility model directly forms re-wiring layer on encapsulated layer, while realizing to metal connecting column and semiconductor
The electric connection of chip reduces process complexity；
5) the utility model antenna metal layer is respectively positioned in encapsulated layer, can further reduce the volume of encapsulating structure, and
Support substrate is removed based on separating layer in final step, improves the cleanliness and electrical property stability of encapsulating structure；
6) the utility model uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that day
Wire encapsulation construction integrated level with higher and better encapsulation performance, before field of semiconductor package has a wide range of applications
Scape.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization value.On
It states embodiment to be only illustrative of the principle and efficacy of the utility model, rather than limit the present invention.It is any to be familiar with
The personage of this technology can all carry out modifications and changes to above-described embodiment under the spirit and scope without prejudice to the utility model.
Therefore, such as those of ordinary skill in the art without departing from the utility model it is revealed spirit and technical idea
Lower completed all equivalent modifications or change, should be covered by the claim of the utility model.
Claims (9)
1. a kind of fan-out-type antenna packages structure, which is characterized in that the encapsulating structure includes:
Re-wiring layer, the re-wiring layer include opposite the first face and the second face；
First metal connecting column is electrically connected on the second face of the re-wiring layer, and with the re-wiring layer；
First antenna metal layer is located on the first metal connecting column, and is electrically connected with the first metal connecting column；
Semiconductor chip is electrically connected on the second face of the re-wiring layer, and with the re-wiring layer；
First encapsulated layer covers the re-wiring layer, the first metal connecting column, first antenna metal layer and semiconductor chip,
And first encapsulated layer appears the first antenna metal layer and is bonded in the adhesive layer of the semiconductor chip；
Second metal connecting column is located on the first antenna metal layer, and is electrically connected with the first antenna metal layer；
Second antenna metal layer is located on the second metal connecting column, and is electrically connected with the second metal connecting column；
Second encapsulated layer covers the second metal connecting column and the second antenna metal layer, and second encapsulated layer appears institute
State the second antenna metal layer；And
Metal coupling, on the first face of the re-wiring layer.
2. fan-out-type antenna packages structure according to claim 1, it is characterised in that: the semiconductor chip further include with
The chip metal portion that the contact pad of the semiconductor chip is connected, the chip metal portion include in metal column and metal ball
One kind.
3. fan-out-type antenna packages structure according to claim 2, it is characterised in that: the side quilt in the chip metal portion
The re-wiring layer cladding.
4. fan-out-type antenna packages structure according to claim 1, it is characterised in that: the adhesive layer includes epoxy resin
One of layer and polymer film layer.
5. fan-out-type antenna packages structure according to claim 1, it is characterised in that: the first metal connecting column and institute
Stating between first antenna metal layer further includes the first metal link block, and the cross-sectional area of the first metal link block is greater than institute
State the first metal connecting column；It further include the connection of the second metal between the second metal connecting column and the second antenna metal layer
Block, and the cross-sectional area of the second metal link block is greater than the second metal connecting column.
6. fan-out-type antenna packages structure according to claim 1, it is characterised in that: first encapsulated layer includes epoxy
One of resin layer, polyimide layer and layer of silica gel；Second encapsulated layer includes epoxy resin layer, polyimide layer and silicon
One of glue-line.
7. fan-out-type antenna packages structure according to claim 1, it is characterised in that: the re-wiring layer includes successively
The patterned dielectric layer and patterned metal wiring layer of stacking.
8. fan-out-type antenna packages structure according to claim 7, it is characterised in that: the dielectric layer includes epoxy resin
Layer, layer of silica gel, PI layers, PBO layers, bcb layer, silicon oxide layer, phosphorosilicate glass layer, one or more of fluorine-containing glassy layer group
It closes, the metal wiring layer includes the combination of one or more of layers of copper, aluminium layer, nickel layer, layer gold, silver layer, titanium layer.
9. fan-out-type antenna packages structure according to claim 1, it is characterised in that: the metal coupling includes copper metal
One of convex block, nickel metal coupling, tin metal convex block and silver metal convex block.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821346487.9U CN208738235U (en) | 2018-08-20 | 2018-08-20 | Fan-out-type antenna packages structure |
| US16/267,061 US10777516B2 (en) | 2018-08-20 | 2019-02-04 | Fan-out antenna packaging structure and packaging method |
| US16/992,016 US11289435B2 (en) | 2018-08-20 | 2020-08-12 | Fan-out antenna packaging structure and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821346487.9U CN208738235U (en) | 2018-08-20 | 2018-08-20 | Fan-out-type antenna packages structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208738235U true CN208738235U (en) | 2019-04-12 |
Family
ID=66030399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821346487.9U Active CN208738235U (en) | 2018-08-20 | 2018-08-20 | Fan-out-type antenna packages structure |
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| Country | Link |
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| CN (1) | CN208738235U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620106A (en) * | 2019-08-22 | 2019-12-27 | 上海先方半导体有限公司 | Wafer-level antenna packaging structure and preparation method |
| CN110649002A (en) * | 2019-10-08 | 2020-01-03 | 上海先方半导体有限公司 | Fan-out type packaging structure of integrated antenna and manufacturing method thereof |
| CN113140887A (en) * | 2020-01-17 | 2021-07-20 | 清华大学 | Packaged antenna and method of manufacturing the same |
-
2018
- 2018-08-20 CN CN201821346487.9U patent/CN208738235U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620106A (en) * | 2019-08-22 | 2019-12-27 | 上海先方半导体有限公司 | Wafer-level antenna packaging structure and preparation method |
| CN110649002A (en) * | 2019-10-08 | 2020-01-03 | 上海先方半导体有限公司 | Fan-out type packaging structure of integrated antenna and manufacturing method thereof |
| CN113140887A (en) * | 2020-01-17 | 2021-07-20 | 清华大学 | Packaged antenna and method of manufacturing the same |
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Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |
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