CN207517662U - Fan-out package structure - Google Patents
Fan-out package structure Download PDFInfo
- Publication number
- CN207517662U CN207517662U CN201721686076.XU CN201721686076U CN207517662U CN 207517662 U CN207517662 U CN 207517662U CN 201721686076 U CN201721686076 U CN 201721686076U CN 207517662 U CN207517662 U CN 207517662U
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- Prior art keywords
- layer
- wiring layer
- antenna
- fan
- antenna module
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model provides a kind of fan-out package structure, and the fan-out package structure includes：Re-wiring layer, semiconductor chip, upside-down mounting is installed in the first surface of re-wiring layer, and is electrically connected with re-wiring layer；Capsulation material layer encapsulates plastic packaging positioned at the first surface of re-wiring layer, and by semiconductor chip；Antenna module, positioned at surface of the capsulation material layer far from re-wiring layer；Electric connection structure, in capsulation material layer, and one end is electrically connected with the re-wiring layer, and the other end is electrically connected in antenna module；The poly- wave arc mirror of high frequency, positioned at surface of the capsulation material layer far from the re-wiring layer, and encapsulates plastic packaging by antenna module, for increasing the antenna gain of antenna module；Solder projection is electrically connected positioned at the second surface of re-wiring layer, and with re-wiring layer.The utility model can dramatically increase the antenna gain of antenna module by setting the poly- wave arc mirror of high frequency in the top of antenna module.
Description
Technical field
The utility model is related to a kind of semiconductor package and packaging method, more particularly to a kind of fan-out package knot
Structure.
Background technology
At present, for communication efficiency the considerations of, can set antenna module, such fan in some fan-out package structures
The packaging method for going out type encapsulating structure is generally：Carrier is provided, adhesive layer is formed in carrier surface；Photoetching, electricity on adhesive layer
Plate out re-wiring layer (Redistribution Layers, RDL)；Semiconductor chip is installed to using chip bonding process
On re-wiring layer；Using Shooting Technique by chip plastic packaging in capsulation material layer；It is formed on the surface of the capsulation material layer
Antenna module；Remove carrier and adhesive layer；Photoetching, plating form Underbump metallization layer (UBM) on re-wiring layer；In UBM
On carry out plant ball reflux, formed soldered ball convex block；Then it carries out wafer and sticks piece, cutting scribing.From the foregoing, it will be observed that existing semiconductor core
In chip package, for semiconductor chip plastic packaging in capsulation material layer, antenna module is made in the surface and half of capsulation material layer
Conductor chip is used cooperatively, and the fan-out package structure is poor there are antenna gain, the problem of so as to influence structural behaviour.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of fan-out package knots
Structure, it is poor for solving antenna gain existing for fan-out package structure of the prior art, so as to influence asking for structural behaviour
Topic.
In order to achieve the above objects and other related objects, the utility model provides a kind of fan-out package structure, the fan
Go out type encapsulating structure to include：
Re-wiring layer, including opposite first surface and second surface；
Semiconductor chip, upside-down mounting is installed in the first surface of the re-wiring layer, and is electrically connected with the re-wiring layer
It connects；
Capsulation material layer encapsulates plastic packaging positioned at the first surface of the re-wiring layer, and by the semiconductor chip；
Antenna module, positioned at the surface of the capsulation material layer far from the re-wiring layer；
Electric connection structure, in the capsulation material layer, and positioned at the antenna module and the re-wiring layer it
Between, one end of the electric connection structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；
The poly- wave arc mirror of high frequency, positioned at the surface of the capsulation material layer far from the re-wiring layer, and by the antenna
Component encapsulates plastic packaging, for increasing the antenna gain of the antenna module；
Solder projection is electrically connected positioned at the second surface of the re-wiring layer, and with the re-wiring layer.
Preferably, the antenna module includes at least one antenna element, and the antenna element is patch antenna or spiral
Shape antenna.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the plastic packaging material
It is in monolayer distribution on surface of the bed of material far from the re-wiring layer.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the plastic packaging material
If the distribution of dried earth layer being stacked on surface of the bed of material far from the re-wiring layer in upper and lower interval, and antenna list described in adjacent two layers
It is connected between member.
Preferably, the antenna module further includes dielectric layer, and the dielectric layer is located at least in antenna list described in adjacent two layers
Between member.
Preferably, each layer antenna element includes multiple antenna elements, more in each layer antenna element
A antenna element is distributed in a ring along the direction for being parallel to the surface of the capsulation material layer far from the re-wiring layer
Above the outside of the semiconductor chip.
Preferably, the electric connection structure includes metal lead wire.
Preferably, the poly- wave arc mirror of the high frequency is convex mirror.
Preferably, the poly- wave arc mirror of the high frequency is polymer convex mirror.
The utility model also provides a kind of preparation method of fan-out package structure, the preparation of the fan-out package structure
Method includes the following steps：
1) substrate is provided, in forming peeling layer on the substrate；
2) in forming re-wiring layer on the peeling layer, the re-wiring layer includes opposite first surface and second
Surface, the second surface of the re-wiring layer are in contact with the upper surface of the peeling layer；
3) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the first table of the re-wiring layer
Face, and the semiconductor chip is electrically connected with the re-wiring layer；
4) in the first surface of the re-wiring layer formed electric connection structure, the bottom of the electric connection structure with it is described
Re-wiring layer is electrically connected；
5) capsulation material layer is formed in the first surface of the re-wiring layer, the capsulation material layer is by the semiconductor
Chip and electric connection structure enveloping plastic packaging, and the surface of the capsulation material layer far from the re-wiring layer exposes institute
State the top of electric connection structure；
6) form antenna module in surface of the capsulation material layer far from the re-wiring layer, the antenna module with
The top electrical connection of the electric connection structure；
7) the poly- wave arc mirror material layer of high frequency is formed in surface of the capsulation material layer far from the re-wiring layer, it is described
The antenna module is encapsulated plastic packaging by the poly- wave arc mirror material layer of high frequency；
8) substrate is removed；
9) solder projection, the solder projection and the re-wiring layer are formed in the second surface of the re-wiring layer
Electrical connection；
10) to the high frequency, poly- wave arc mirror material layer is processed to form the poly- wave arc mirror of the high frequency.
Preferably, in step 10), using 3D artistic carving, poly- wave arc mirror material layer is processed to be formed to the high frequency
The poly- wave arc mirror of high frequency.
Preferably, the poly- wave arc mirror of the high frequency obtained in step 10) is convex mirror.
Preferably, the poly- wave arc mirror of the high frequency is polymer convex mirror.
As described above, the fan-out package structure of the utility model, has the advantages that：The utility model is fanned out to
Type encapsulating structure can reduce the size of antenna module by the top by antenna module independently of re-wiring layer；It is meanwhile logical
It crosses and the poly- wave arc mirror of high frequency is set in the top of the antenna module, the antenna gain of the antenna module can be dramatically increased, from
And improve the performance of the fan-out package structure.
Description of the drawings
Fig. 1 is shown as the flow chart of the preparation method of fan-out package structure provided in the utility model embodiment one.
The preparation method of fan-out package structure that Fig. 2~Figure 14 is shown as providing in the utility model embodiment one respectively walks
Suddenly the structure diagram presented, wherein, Figure 14 is shown as the structure diagram of the fan-out package structure of the utility model.
Component label instructions
11 substrates
12 peeling layers
13 re-wiring layers
131 first medium layers
132 metal line layers
14 semiconductor chips
141 connection soldered balls
15 electric connection structures
16 capsulation material layers
17 antenna modules
171 antenna elements
172 second dielectric layer
173 conductive plugs
The poly- wave arc mirror of 18 high frequencies
The poly- wave arc mirror material layer of 181 high frequencies
19 solder projections
Specific embodiment
Illustrate the embodiment of the utility model below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig.1~Figure 14.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though when only display is with related component in the utility model rather than according to actual implementation in diagram
Component count, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation
Become, and its assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the utility model provides a kind of preparation method of fan-out package structure, the fan-out package knot
The preparation method of structure includes the following steps：
1) substrate is provided, in forming peeling layer on the substrate；
2) in forming re-wiring layer on the peeling layer, the re-wiring layer includes opposite first surface and second
Surface, the second surface of the re-wiring layer are in contact with the upper surface of the peeling layer；
3) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the first table of the re-wiring layer
Face, and the semiconductor chip is electrically connected with the re-wiring layer；
4) in the first surface of the re-wiring layer formed electric connection structure, the bottom of the electric connection structure with it is described
Re-wiring layer is electrically connected；
5) capsulation material layer is formed in the first surface of the re-wiring layer, the capsulation material layer is by the semiconductor
Chip and electric connection structure enveloping plastic packaging, and the surface of the capsulation material layer far from the re-wiring layer exposes institute
State the top of electric connection structure；
6) form antenna module in surface of the capsulation material layer far from the re-wiring layer, the antenna module with
The top electrical connection of the electric connection structure；
7) the poly- wave arc mirror material layer of high frequency is formed in surface of the capsulation material layer far from the re-wiring layer, it is described
The antenna module is encapsulated plastic packaging by the poly- wave arc mirror material layer of high frequency；
8) substrate is removed；
9) solder projection, the solder projection and the re-wiring layer are formed in the second surface of the re-wiring layer
Electrical connection；
10) to the high frequency, poly- wave arc mirror material layer is processed to form the poly- wave arc mirror of the high frequency.
In step 1), S1 steps and Fig. 2 and Fig. 3 in please referring to Fig.1 provide a substrate 11, in shape on the substrate
Into peeling layer 12.
As an example, the material of the substrate 11 can include in silicon, glass, silica, ceramics, polymer and metal
One or more kinds of composite materials, shape can be wafer shape, it is rectangular or it is other it is arbitrary needed for shape；The present embodiment
The problems such as rupture, warpage, fracture occur for semiconductor chip in subsequent preparation process is prevented by the substrate 11.
As an example, as shown in figure 3, after providing the substrate 11, further include and formed in the upper surface of the substrate 11
The step of peeling layer 12.
As an example, the peeling layer 12 in subsequent technique as the re-wiring layer 13 being subsequently formed and positioned at described
The separating layer between other structures and the substrate 11 on re-wiring layer 13, preferably selects the bonding with smooth finish surface
Material is made, and must have certain binding force with re-wiring layer 13, to ensure re-wiring layer 13 in subsequent technique
Situations such as mobile will not be generated, in addition, it also has stronger binding force with the substrate 11, in general, with the base
The binding force of plate 11 needs to be more than the binding force with the re-wiring layer 13.As an example, the material choosing of the peeling layer 12
From the two-sided adhesive tape for being respectively provided with viscosity or the adhesive glue made by spin coating proceeding etc..Adhesive tape is preferably using UV adhesive tapes, in UV
It is easy to pull off after light irradiation.In other embodiments, physical vaporous deposition or change also can be selected in the peeling layer 12
The other materials layer that vapour deposition process is formed is learned, as epoxy resin (Epoxy), silicon rubber (silicone rubber), polyamides are sub-
Amine (PI), polybenzoxazoles (PBO), benzocyclobutene (BCB) etc..In substrate 11 described in later separation, wet method corruption can be used
Erosion, chemical mechanical grinding, the methods of removing, remove the peeling layer 12.
S2 steps and Fig. 4 in please referring to Fig.1, in formation re-wiring layer 13, the cloth again on the peeling layer 12
Line layer 13 includes opposite first surface and second surface, the second surface of the re-wiring layer 13 and the peeling layer 12
Upper surface is in contact.
In one example, as shown in figure 4, the re-wiring layer 13 includes one layer of first medium layer 131 and one layer of metal
Line layer 132 forms the re-wiring layer 13 in the upper surface of the substrate 11 and includes the following steps：
2-1) metal line layer 132 is formed in the upper surface of the substrate 11；
2-2) first medium layer 131 is formed in the upper surface of the substrate 11, the first medium layer 131 is by the metal
Line layer 132 wraps up, and the upper surface of the first medium layer 131 exposes the top of the metal line layer 132.
In another example, as shown in figure 4, the re-wiring layer 13 includes one layer of first medium layer 131 and one layer of gold
Belong to line layer 132, forming re-wiring layer 13 in the upper surface of the substrate 11 includes the following steps：
The first medium layer 131 2-1) is formed in the upper surface of the substrate 11, by photoetching and etching technics in institute
It states and groove is formed in first medium layer 131, the groove defines the shape of the metal line layer 132；
2-2) in forming the metal line layer 132 in the groove.
Certainly, in another example, at least double layer of metal line layer 132 and at least one layer are included in the re-wiring layer 13
First medium layer 131 forms re-wiring layer 13 in the upper surface of the substrate 11 and includes the following steps：
2-1) first layer metal line layer 132 is formed in the upper surface of the substrate 11；
2-2) first medium layer 131 is formed in the upper surface of the substrate 11, the first medium layer 131 is by first layer institute
It states metal line layer 132 to encapsulate, and the upper surface of the first medium layer 131 is higher than the upper surface of the metal line layer 132；
2-3) between if formation dried layer is electrically connected with metal line layer described in first layer 132 in the first medium layer 131
It is electrically connected between other metal line layers 132 for stacking arrangement, the adjacent metal line layer 132 via metal plug.
As an example, in above-mentioned example, the material of the metal line layer 132 can be but be not limited only to copper, aluminium, nickel, gold,
Silver, a kind of material in titanium or two kinds and two or more combined materials, and PVD, CVD, sputtering, plating or chemical plating can be used
Etc. techniques form the metal line layer 132.The material of the first medium layer 131 can be low k dielectric；Specifically, institute
First medium layer 131 is stated to may be used in epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass
A kind of material, and the techniques such as spin coating, CVD, plasma enhanced CVD may be used and form the first medium layer 131.
In step 3), S3 steps and Fig. 5 in please referring to Fig.1 provide semiconductor chip 14, by the semiconductor core
14 upside-down mounting of piece is installed in the first surface of the re-wiring layer 13, and the semiconductor chip 14 and the re-wiring layer 13
Electrical connection.
As an example, bonding back tracking method (bond-on-trace) may be used is bonded to institute by the semiconductor chip 14
State the upper surface of re-wiring layer 13；The bonding back tracking method is not repeated herein known to those skilled in the art.Certainly, originally
Can also the semiconductor chip 14 be bonded to by the re-wiring layer using a kind of any other bonding method in embodiment
13 upper surface.
As an example, the front of the semiconductor chip 14 is formed with the contact pad for drawing inside function device electricity
(not shown), 14 back bonding of semiconductor chip is in the upper surface of the re-wiring layer 13, and the semiconductor chip
14 contact pad is electrically connected with the re-wiring layer 13.Specifically, the semiconductor chip 14 can be via connection soldered ball
141 are bonded to the upper surface of the re-wiring layer 13；The material of the connection soldered ball 141 can be in copper, nickel, tin and silver
It is at least one.
Addressed on it should be noted that " being electrically connected with the re-wiring layer 13 " refer both to it is described again
Metal line layer 132 in wiring layer 13 is electrically connected.
In step 4), the S4 steps and Fig. 6 that please refer to Fig.1 form electricity in the first surface of the re-wiring layer 13
Connection structure 15, the bottom of the electric connection structure 15 are electrically connected with the re-wiring layer 13.
As an example, the electric connection structure 15 can be metal wire or metal column etc., it is preferable that in the present embodiment,
The electric connection structure 15 is metal wire, and the first surface that routing technique may be used in the re-wiring layer 13 forms metal
Line is as the electric connection structure 15.
As an example, the electric connection structure 15 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 15 can be copper, silver, nickel, aluminium or tin etc..
In step 5), the S5 steps and Fig. 7 to Fig. 8 that please refer to Fig.1, in the first surface shape of the re-wiring layer 13
Into capsulation material layer 16, the semiconductor chip 14 and the electric connection structure 15 are encapsulated plastic packaging by the capsulation material layer 16,
And surface of the capsulation material layer 16 far from the re-wiring layer 13 exposes the top of the electric connection structure 15.
As an example, compressing and forming process, transfer shaping technology, hydraulic seal moulding process, molding bottom may be used
Fill process, capillary underfill technique, vacuum lamination process or spin coating proceeding are in the first surface of the re-wiring layer 13
Form the capsulation material layer 16.Preferably, in the present embodiment, using molded underfill technique in the re-wiring layer 13
First surface form the capsulation material layer 16, such capsulation material can be smooth and be promptly filled in the semiconductor core
Gap of the piece 14 between the electric connection structure 15 can be effectively prevented from interface debonding occur, and molded underfill is not
It can be restricted as capillary underfill technique of the prior art, greatly reduce technology difficulty, can be used for smaller
Joint gap, be more suitable for stacked structure.
As an example, the material of the capsulation material layer 16 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Fat, curable polymer-based material or curable resin-based materials etc..
In one example, the height for being initially formed the capsulation material layer 16 is higher than the height of the electric connection structure 15,
The semiconductor chip 14 and the electric connection structure 15 are encapsulated plastic packaging by i.e. described capsulation material layer 16 completely；Then, it then adopts
The part capsulation material layer 16 is removed with techniques such as chemical mechanical grindings so that the upper surface of the capsulation material layer 16 and institute
State the top flush of electric connection structure 15.
In another example, can be according to the formation capsulation material layer according to the top of the electric connection structure 15
16 so that the height of the capsulation material layer 16 of formation is just identical with the height of the electric connection structure 15.It in this way can be with
The technique being ground to the capsulation material layer 16 is saved, so as to reduce processing step, has saved cost.
In step 6), S6 steps and Fig. 9 to Figure 10 in please referring to Fig.1, in the capsulation material layer 16 far from described
The surface of re-wiring layer 13 forms antenna module 17, and the top of the antenna module 17 and the electric connection structure 15 is electrically connected
It connects.
In one example, the antenna module 17 includes an antenna element 171 being made of helical antenna, the antenna
Unit 171 is surrounded on above the outside of the semiconductor chip 14, i.e., described antenna element 171 is in 14 institute of semiconductor chip
It is located at the periphery of the semiconductor chip 14 in the projection of plane.In the capsulation material layer 16 far from the re-wiring layer 13
Surface formed antenna module 17 specific method be：It can be in the capsulation material layer 16 far from the re-wiring layer 13
Surface forms one layer of antenna material layer, then removes the extra antenna material layer by lithographic etch process, reservation it is described
Antenna material layer is used as the antenna element 171.It in other examples, can also be first in the capsulation material layer 16 far from institute
The surface for stating re-wiring layer 13 forms the Patterned masking layer with opening, and the opening defines the antenna element 171
Shape and position；Then, antenna material layer then is in the opening deposited to form the antenna element 171；Finally, it removes
The Patterned masking layer.
As an example, the antenna element 171 can be arbitrary helical antenna, for example, rectangular coil shape antenna or circle
Shape helical antenna etc..
In another example, the antenna is formed in surface of the capsulation material layer 16 far from the re-wiring layer 13
The specific method of component 17 is：If it forms one layer in surface of the capsulation material layer 16 far from the re-wiring layer 13 to include
Dry antenna element 171 is used as the antenna module 17, wherein, the antenna element 171 can be patch antenna or helical form
Antenna.
Specifically, one layer of day wire rod can be formed on surface of the capsulation material layer 16 far from the re-wiring layer 13
Then the bed of material removes the extra antenna material layer by lithographic etch process, if the antenna material layer of reservation is used as
The dry antenna element 171.It in other examples, can also be first in the capsulation material layer 16 far from the re-wiring layer
13 surface forms the Patterned masking layer with opening, and described be open defines shape and the position of the antenna element 171；
Then, antenna material layer then is in the opening deposited to form the antenna element 171；Finally, removal is described graphically covers
Film layer.
It should be noted that when the antenna element 171 is patch antenna, the patch antenna can be metal derby；Institute
When stating antenna element 171 as helical antenna, the helical antenna can be formed for metal wire coiling is spiral, described
Helical antenna can be rectangular coil shape antenna or round spiral antenna.
It should be further noted that the antenna element 171 in above-mentioned two example is in monolayer distribution, section knot
Structure schematic diagram is as shown in Figure 9.
In another example, as shown in Figure 10, the antenna module 17 includes multiple antenna elements 171, Duo Gesuo
It states two layers that antenna element 171 is stacked on surface of the capsulation material layer 16 far from the re-wiring layer 13 in interval up and down
Distribution, and be connected between antenna element 171 described in adjacent two layers via conductive plug 173；At this point, in the capsulation material layer
16 surfaces far from the re-wiring layer 13 form antenna module 17 and include the following steps：
6-1) one layer is formed in surface of the capsulation material layer 16 far from the re-wiring layer 13 include several days
The antenna of line unit 171, several described antenna elements 171 are distributed in a ring in this layer of antenna, and the antenna element 171 is block
Shape antenna or helical antenna；
6-2) dielectric layer is formed (i.e. shown in figure in surface of the capsulation material layer 16 far from the re-wiring layer 13
Second dielectric layer 172), the antenna element is completely covered in the dielectric layer (second dielectric layer 172 i.e. shown in figure)
171；
6-3) in formation conductive plug 173, the conduction in the dielectric layer (second dielectric layer 172 i.e. shown in figure)
Embolism 173 is electrically connected with the antenna element 171；
6-4) one layer is formed again including several in the surface of the dielectric layer (second dielectric layer 172 i.e. shown in figure)
The antenna of a antenna element 171, several described antenna elements 171 are distributed in a ring in this layer of antenna, the antenna list
Member 171 is patch antenna or helical antenna.
In another example, multiple antenna elements 171 in the capsulation material layer 16 far from the re-wiring layer
13 surface can also be in three layers of stacked distribution of interval up and down, at this point, the step 2-4 in a upper example) it further includes later
Following steps：
The surface of the dielectric layer (second dielectric layer 172 i.e. shown in figure) 6-5) formed in upper step shape again
Into one layer of dielectric layer (second dielectric layer 172 i.e. shown in figure), the dielectric layer (second dielectric layer i.e. shown in figure
172) step 6-4 is completely covered) in formed the antenna element 171；
6-6) in step 6-5) in formed the dielectric layer (second dielectric layer 172 i.e. shown in figure) in formed conduction
Embolism 173, the conductive plug 173 and step 2-4) in formed the antenna element 171 be electrically connected；
6-7) in step 6-5) in formed the dielectric layer (second dielectric layer 172 i.e. shown in figure) surface again
One layer of antenna for including several antenna elements 171 is formed, several described antenna elements 171 are in a ring in this layer of antenna
Distribution, the antenna element 171 are patch antenna or helical antenna.
In another example, multiple antenna elements 171 in the capsulation material layer 16 far from the re-wiring layer
13 surface is also in the Multi-layers distributing for being more than three layers that interval is stacked up and down, at this point, step 6-7) further include repetition step later
6-5)~step 6-7) at least once the step of.
As an example, in above-mentioned each example, the material of the dielectric layer (second dielectric layer 172 i.e. shown in figure) can
To include but are not limited to silica or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition
The techniques such as technique (CVD), plasma enhanced CVD are prepared.The material of the antenna element 171 and the conductive plug 173
It can include but are not limited to one or more of copper, aluminium, nickel, gold, silver, tin, titanium；Wherein, the antenna element 171
And the conductive plug 173 can pass through physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, electricity
One kind in plating or chemical plating is prepared.
In step 7), S7 steps and Figure 11 in please referring to Fig.1, in the capsulation material layer 16 far from the cloth again
The surface of line layer 13 forms the poly- wave arc mirror material layer 181 of high frequency, and the poly- wave arc mirror material layer 181 of high frequency is by the antenna module
17 enveloping plastic packagings.
As an example, compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination may be used
Technique or spin coating proceeding form the poly- wave arc of the high frequency in surface of the capsulation material layer 16 far from the re-wiring layer 13
Mirror material layer 181.The material of the poly- wave arc mirror material layer 181 of high frequency can with the material identical of the capsulation material layer 16,
The material of the poly- wave arc mirror material layer 181 of high frequency can be but be not limited only to polyimides, silica gel, epoxy resin, can be cured
Polymer-based material or curable resin-based materials etc..Certainly, in other examples, the poly- wave arc mirror material of the high frequency
Layer 181 material can also be it is any other it is a kind of can cause aerial signal by polymer material.
In step 8), S8 steps and Figure 12 in please referring to Fig.1 remove the substrate 11.
As an example, grinding technics, reduction process etc., which may be used, is removed the substrate 11 and the peeling layer 12.
Preferably, in the present embodiment, the peeling layer 12 is UV adhesive tapes, and the mode for tearing the peeling layer 12 may be used to remove
State substrate 11.
In step 9), S9 steps and Figure 13 in please referring to Fig.1 are formed in the second surface of the re-wiring layer 13
Solder projection 19, the solder projection 19 are electrically connected with the re-wiring layer 13.
In one example, solder projection 19 is formed in the lower surface of the re-wiring layer 13 to include the following steps：
9-1) metal column is formed in the second surface of the re-wiring layer 13；
9-2) soldered ball is formed in the lower surface of the metal column.
As an example, the material of the metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and
Two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering,
Any one of plating or chemical plating technique form the metal column.The material of the soldered ball can be copper, aluminium, nickel, gold, silver,
A kind of material or two kinds and two or more combined materials in titanium can form the soldered ball by planting ball reflux technique.
In another example, the solder projection 19 is a soldered ball, can directly form weldering by planting ball reflux technique
Ball is as the solder projection 19.
In step 10), S10 steps and Figure 14 in please referring to Fig.1, the poly- wave arc mirror material to the high frequency, 181 carry out
It processes to form the poly- wave arc mirror 18 of the high frequency.
As an example, it may be used but be not limited only to 3D artistic carving poly- wave arc mirror material layer 181 carries out to the high frequency
It processes to form the poly- wave arc mirror 18 of the high frequency.
As an example, the poly- wave arc mirror 18 of high frequency is convex mirror, i.e., the described poly- wave arc mirror 18 of high frequency is to far from the day
The convex surface radian of 17 side of line component protrusion.Since the poly- wave arc mirror 18 of the high frequency is convex mirror, the antenna module 17 is sent out
Aerial signal be easier to assemble by the poly- wave arc mirror 18 of the high frequency for convex mirror when propagating outward, so as to effectively carry
The antenna gain of the high antenna module 17.
As an example, the curved surface radian of the poly- wave arc mirror 18 of high frequency can be set according to actual needs, herein not
It limits.
Embodiment two
Please continue to refer to Figure 14, the present embodiment also provides a kind of fan-out package structure, the fan-out package structure by
Preparation method described in embodiment one is prepared, and the fan-out package structure includes：Re-wiring layer 13 is described heavy
New route layer 13 includes opposite first surface and second surface；Semiconductor chip 14,14 upside-down mounting of the semiconductor chip installing
It is electrically connected in the first surface of the re-wiring layer 13, and with the re-wiring layer 13；Capsulation material layer 16, the plastic packaging
Material layer 16 is located at the first surface of the re-wiring layer 13, and the semiconductor chip 14 is encapsulated plastic packaging；Antenna module
17, the antenna module 17 is located at surface of the capsulation material layer 16 far from the re-wiring layer 13；Electric connection structure 15,
The electric connection structure 15 is located in the capsulation material layer 16, and positioned at the antenna module 17 and the re-wiring layer 13
Between, one end of the electric connection structure 15 is electrically connected with the re-wiring layer 13, and the other end is in 17 electricity of antenna module
Connection；The poly- wave arc mirror 18 of high frequency, the poly- wave arc mirror 18 of high frequency are located at the capsulation material layer 16 far from the re-wiring layer
13 surface, and the antenna module 17 is encapsulated into plastic packaging, for increasing the antenna gain of the antenna module 17；Solder projection
19, the solder projection 19 is located at the second surface of the re-wiring layer 13, and is electrically connected with the re-wiring layer 13.
In one example, as shown in figure 14, the re-wiring layer 13 includes：First medium layer 131；Metal line layer 132,
The metal line layer 132 is located in the first medium layer 131.
In another example, the re-wiring layer 13 includes：First medium layer 131；Metallic stacked structure, the metal
Laminated construction is located in the first medium layer 131；The metallic stacked structure includes the metal line layer 132 of Spaced arrangement
And metal plug, the metal plug is between the adjacent metal line layer 132, by the adjacent metal line layer 132
Electrical connection.
Addressed on it should be noted that " being electrically connected with the re-wiring layer 13 " refer both to it is described again
Metal line layer 132 in wiring layer 13 is electrically connected.
As an example, the material of the first medium layer 131 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass, the material of the metal line layer 132 include copper, aluminium, nickel, gold,
The combination of one or more of silver, titanium.
As an example, the front of the semiconductor chip 14 is formed with the Contact welding for drawing inside function device electricity
Pad, 14 back bonding of semiconductor chip is in the first surface of the re-wiring layer 13, and the semiconductor chip 14
Contact pad is electrically connected with the re-wiring layer 13.Specifically, the semiconductor chip 14 can be via connection 141 key of soldered ball
Together in the first surface of the re-wiring layer 13；It is described connection soldered ball 141 material can be copper, nickel, tin and silver in extremely
Few one kind.
As an example, the electric connection structure 15 can be metal wire or metal column etc., it is preferable that in the present embodiment,
The electric connection structure 15 is metal wire, and the first surface that routing technique may be used in the re-wiring layer 13 forms metal
Line is as the electric connection structure 15.
As an example, the electric connection structure 15 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 15 can be copper, silver, nickel, aluminium or tin etc..
As an example, the material of the capsulation material layer 16 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Fat, curable polymer-based material or curable resin-based materials etc..The upper surface of the capsulation material layer 16 is (i.e. remote
Surface and the top of the electric connection structure 15 from the re-wiring layer 13) flush.
In one example, the antenna module 171 includes an antenna element 171,171 1 helical form of antenna element
Antenna, the helical antenna are surrounded on above the outside of the semiconductor chip 14, i.e., described helical antenna is described half
The projection of 14 place plane of conductor chip is positioned at the periphery of the semiconductor chip 14.At this point, the antenna element 171 can be
Arbitrary helical antenna, for example, rectangular coil shape antenna or round spiral antenna etc..
In one example, as shown in figure 14, the antenna module 17 includes multiple antenna elements 171, multiple described
Antenna element 171 is on surface of the capsulation material layer 16 far from the re-wiring layer 13 in monolayer distribution, several institutes
It states antenna element 171 to be distributed in a ring, the antenna element 171 can be patch antenna or helical antenna.Described in several
Antenna element 171 is surrounded on above the outside of the semiconductor chip 14, i.e., several described antenna elements 171 are partly led described
The projection of 14 place plane of body chip is positioned at the periphery of the semiconductor chip 14.
It should be noted that when the antenna element 171 is patch antenna, the patch antenna can be metal derby；Institute
When stating antenna element 171 as helical antenna, the helical antenna can be formed for metal wire coiling is spiral, described
Helical antenna can be rectangular coil shape antenna or round spiral antenna.
In another example, the antenna module 17 includes multiple antenna elements 171, multiple antenna elements
If 171 distribution of dried earth layer being stacked on surface of the capsulation material layer 16 far from the re-wiring layer 13 in upper and lower interval,
And be connected between antenna element 171 described in adjacent two layers, wherein, with multiple antenna elements 171 in the modeling in Figure 10
In two layers stacked of distribution of interval up and down as example on surface of the closure material layer 16 far from the re-wiring layer 13.
As an example, the antenna module 17 further includes dielectric layer (second dielectric layer 172 i.e. shown in figure), given an account of
Matter layer (second dielectric layer 172 i.e. shown in figure) is located at least between antenna element 171 described in adjacent two layers, with institute in Figure 10
For antenna element 171 is stated in two layers of distribution, the dielectric layer (second dielectric layer 172 i.e. shown in figure) is completely covered first
The layer antenna element 171, antenna element 171 described in the second layer are located at the dielectric layer (second dielectric layer i.e. shown in figure
172) surface far from the capsulation material layer 16.
As an example, the antenna module 17 further includes conductive plug 173, the conductive plug 173 is located at the medium
Layer (second dielectric layer 172 i.e. shown in figure) is interior, and between antenna element 171 described in adjacent two layers, and by adjacent two
The layer antenna element 171 is electrically connected.
As an example, in above-mentioned each example, the material of the dielectric layer (second dielectric layer 172 i.e. shown in figure) can
To include but are not limited to silica or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition
The techniques such as technique (CVD), plasma enhanced CVD are prepared.The material of the antenna element 171 and the conductive plug 173
It can include but are not limited to one or more of copper, aluminium, nickel, gold, silver, tin, titanium；Wherein, the antenna element 171
And the conductive plug 173 can pass through physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, electricity
One kind in plating or chemical plating is prepared.
As an example, the poly- wave arc mirror 18 of high frequency is convex mirror, i.e., the described poly- wave arc mirror 18 of high frequency is to far from the day
The convex surface radian of 17 side of line component protrusion.Since the poly- wave arc mirror 18 of the high frequency is convex mirror, the antenna module 17 is sent out
Aerial signal be easier to assemble by the poly- wave arc mirror 18 of the high frequency for convex mirror when propagating outward, so as to effectively carry
The antenna gain of the high antenna module 17.
As an example, the material of the poly- wave arc mirror 18 of high frequency can be with the material identical of the capsulation material layer 16, institute
The material for stating the poly- wave arc mirror 18 of high frequency can be but be not limited only to polyimides, silica gel, epoxy resin, curable polymer matrix
Material or curable resin-based materials etc..Certainly, in other examples, the material of the poly- wave arc mirror 18 of the high frequency can be with
For it is any other it is a kind of can cause aerial signal by polymer material.
As an example, the curved surface radian of the poly- wave arc mirror 18 of high frequency can be set according to actual needs, herein not
It limits.
In one example, the solder projection 19 includes：Metal column, the metal column are located at the re-wiring layer 13
Second surface, and be electrically connected with the re-wiring layer 13；Soldered ball, the soldered ball are located at the lower surface of the metal column.It is described
The material of metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and two or more combined materials, can
To pass through any one of physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, plating or chemical plating
Technique forms the metal column.The material of the soldered ball can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and
Two or more combined materials can form the soldered ball by planting ball reflux technique.
In another example, the solder projection 19 is soldered ball.
In conclusion the fan-out package structure of the utility model, the fan-out package structure includes：Rewiring
Layer, including opposite first surface and second surface；Semiconductor chip, upside-down mounting are installed in the first table of the re-wiring layer
Face, and be electrically connected with the re-wiring layer；Capsulation material layer, positioned at the first surface of the re-wiring layer, and by described in
Semiconductor chip encapsulates plastic packaging；Antenna module, positioned at the surface of the capsulation material layer far from the re-wiring layer；Electrical connection
Structure, in the capsulation material layer, and between the antenna module and the re-wiring layer, the binding that is electrically connected
One end of structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；The poly- wave arc mirror of high frequency, positioned at institute
Surface of the capsulation material layer far from the re-wiring layer is stated, and the antenna module is encapsulated into plastic packaging, for increasing the day
The antenna gain of line component；Solder projection is electrically connected positioned at the second surface of the re-wiring layer, and with the re-wiring layer
It connects.The fan-out package structure of the utility model can reduce day by the top by antenna module independently of re-wiring layer
The size of line component；Meanwhile by setting the poly- wave arc mirror of high frequency in the top of the antenna module, the day can be dramatically increased
The antenna gain of line component, so as to improve the performance of the fan-out package structure.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications completed under refreshing and technological thought or change, should be covered by the claim of the utility model.
Claims (9)
1. a kind of fan-out package structure, which is characterized in that the fan-out package structure includes：
Re-wiring layer, including opposite first surface and second surface；
Semiconductor chip, upside-down mounting is installed in the first surface of the re-wiring layer, and is electrically connected with the re-wiring layer；
Capsulation material layer encapsulates plastic packaging positioned at the first surface of the re-wiring layer, and by the semiconductor chip；
Antenna module, positioned at the surface of the capsulation material layer far from the re-wiring layer；
Electric connection structure, in the capsulation material layer, and between the antenna module and the re-wiring layer, institute
The one end for stating electric connection structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；
The poly- wave arc mirror of high frequency, positioned at the surface of the capsulation material layer far from the re-wiring layer, and by the antenna module
Plastic packaging is encapsulated, for increasing the antenna gain of the antenna module；
Solder projection is electrically connected positioned at the second surface of the re-wiring layer, and with the re-wiring layer.
2. fan-out package structure according to claim 1, it is characterised in that：The antenna module includes at least one day
Line unit, the antenna element are patch antenna or helical antenna.
3. fan-out package structure according to claim 2, it is characterised in that：The antenna module includes multiple days
Line unit, multiple antenna elements are in monolayer distribution on the surface of the capsulation material layer far from the re-wiring layer.
4. fan-out package structure according to claim 2, it is characterised in that：The antenna module includes multiple days
Line unit, multiple antenna elements are folded in interval up and down on the surface of the capsulation material layer far from the re-wiring layer
If the distribution of dried earth layer put, and be connected between antenna element described in adjacent two layers.
5. fan-out package structure according to claim 4, the antenna module further includes dielectric layer, and the dielectric layer is extremely
Less between antenna element described in adjacent two layers.
6. fan-out package structure according to any one of claim 3 to 5, it is characterised in that：Each layer antenna list
Member includes multiple antenna elements, and multiple antenna elements in each layer antenna element are along being parallel to the plastic packaging
The direction on surface of the material layer far from the re-wiring layer is distributed in a ring above the outside of the semiconductor chip.
7. fan-out package structure according to claim 1, it is characterised in that：The electric connection structure draws including metal
Line.
8. fan-out package structure according to claim 1, it is characterised in that：The poly- wave arc mirror of high frequency is convex mirror.
9. fan-out package structure according to claim 1, it is characterised in that：The poly- wave arc mirror of high frequency is convex for polymer
Face mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721686076.XU CN207517662U (en) | 2017-12-07 | 2017-12-07 | Fan-out package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721686076.XU CN207517662U (en) | 2017-12-07 | 2017-12-07 | Fan-out package structure |
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| CN207517662U true CN207517662U (en) | 2018-06-19 |
Family
ID=62543927
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993935A (en) * | 2017-12-07 | 2018-05-04 | 中芯长电半导体（江阴）有限公司 | Fan-out package structure and preparation method thereof |
| CN110137157A (en) * | 2019-06-03 | 2019-08-16 | 中芯长电半导体（江阴）有限公司 | Semiconductor package and preparation method thereof |
| CN113113766A (en) * | 2019-12-25 | 2021-07-13 | 盛合晶微半导体(江阴)有限公司 | Lens antenna packaging structure, preparation method and electronic equipment |
| CN113113766B (en) * | 2019-12-25 | 2024-04-26 | 盛合晶微半导体(江阴)有限公司 | Lens antenna packaging structure, manufacturing method and electronic equipment |
-
2017
- 2017-12-07 CN CN201721686076.XU patent/CN207517662U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993935A (en) * | 2017-12-07 | 2018-05-04 | 中芯长电半导体（江阴）有限公司 | Fan-out package structure and preparation method thereof |
| CN110137157A (en) * | 2019-06-03 | 2019-08-16 | 中芯长电半导体（江阴）有限公司 | Semiconductor package and preparation method thereof |
| CN113113766A (en) * | 2019-12-25 | 2021-07-13 | 盛合晶微半导体(江阴)有限公司 | Lens antenna packaging structure, preparation method and electronic equipment |
| CN113113766B (en) * | 2019-12-25 | 2024-04-26 | 盛合晶微半导体(江阴)有限公司 | Lens antenna packaging structure, manufacturing method and electronic equipment |
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Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |