CN107993935A - Fan-out package structure and preparation method thereof - Google Patents
Fan-out package structure and preparation method thereof Download PDFInfo
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- CN107993935A CN107993935A CN201711282022.1A CN201711282022A CN107993935A CN 107993935 A CN107993935 A CN 107993935A CN 201711282022 A CN201711282022 A CN 201711282022A CN 107993935 A CN107993935 A CN 107993935A
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- wiring layer
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- material layer
- fan
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The present invention provides a kind of fan-out package structure and preparation method thereof, and the fan-out package structure includes：Re-wiring layer；Semiconductor chip, upside-down mounting is installed in the first surface of re-wiring layer, and is electrically connected with re-wiring layer；Capsulation material layer, plastic packaging is encapsulated positioned at the first surface of re-wiring layer, and by semiconductor chip；Antenna module, positioned at surface of the capsulation material layer away from re-wiring layer；Electric connection structure, in capsulation material layer, and one end is electrically connected with the re-wiring layer, and the other end is electrically connected in antenna module；The poly- ripple arc mirror of high frequency, positioned at surface of the capsulation material layer away from the re-wiring layer, and encapsulates plastic packaging, for increasing the antenna gain of antenna module by antenna module；Solder projection, is electrically connected positioned at the second surface of re-wiring layer, and with re-wiring layer.The present invention can dramatically increase the antenna gain of antenna module by setting the poly- ripple arc mirror of high frequency in the top of antenna module.
Description
Technical field
The present invention relates to a kind of semiconductor package and method for packing, more particularly to a kind of fan-out package structure and
Its preparation method.
Background technology
At present, for the consideration of communication efficiency, antenna module, such fan can be set in some fan-out package structures
The method for packing for going out type encapsulating structure is generally：Carrier is provided, adhesive layer is formed in carrier surface；Photoetching, electricity on adhesive layer
Plate out re-wiring layer (Redistribution Layers, RDL)；Semiconductor chip is installed to using chip bonding process
On re-wiring layer；Using Shooting Technique by chip plastic packaging in capsulation material layer；Formed on the surface of the capsulation material layer
Antenna module；Remove carrier and adhesive layer；Photoetching, plating form Underbump metallization layer (UBM) on re-wiring layer；In UBM
On carry out plant ball reflux, formed soldered ball convex block；Then carry out wafer and stick piece, cutting scribing.From the foregoing, it will be observed that existing semiconductor core
In chip package, for semiconductor chip plastic packaging in capsulation material layer, antenna module is made in the surface and half of capsulation material layer
Conductor chip is used cooperatively, and the fan-out package structure is poor there are antenna gain, so that the problem of influencing structural behaviour.
The content of the invention
In view of the foregoing deficiencies of prior art, it is an object of the invention to provide a kind of fan-out package structure and its
Preparation method, it is poor for solving antenna gain existing for fan-out package structure of the prior art, so as to influence structural
The problem of energy.
In order to achieve the above objects and other related objects, the present invention provides a kind of fan-out package structure, the fan-out-type
Encapsulating structure includes：
Re-wiring layer, including opposite first surface and second surface；
Semiconductor chip, upside-down mounting is installed in the first surface of the re-wiring layer, and is electrically connected with the re-wiring layer
Connect；
Capsulation material layer, plastic packaging is encapsulated positioned at the first surface of the re-wiring layer, and by the semiconductor chip；
Antenna module, positioned at the surface of the capsulation material layer away from the re-wiring layer；
Electric connection structure, in the capsulation material layer, and positioned at the antenna module and the re-wiring layer it
Between, one end of the electric connection structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；
The poly- ripple arc mirror of high frequency, positioned at the surface of the capsulation material layer away from the re-wiring layer, and by the antenna
Component encapsulates plastic packaging, for increasing the antenna gain of the antenna module；
Solder projection, is electrically connected positioned at the second surface of the re-wiring layer, and with the re-wiring layer.
Preferably, the antenna module includes at least one antenna element, and the antenna element is patch antenna or spiral
Shape antenna.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the plastic packaging material
It is in monolayer distribution on surface of the bed of material away from the re-wiring layer.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the plastic packaging material
If the distribution of dried earth layer being stacked on surface of the bed of material away from the re-wiring layer in being spaced up and down, and antenna list described in adjacent two layers
It is connected between member.
Preferably, the antenna module further includes dielectric layer, and the dielectric layer is located at least in antenna list described in adjacent two layers
Between member.
Preferably, each layer antenna element includes multiple antenna elements, more in each layer antenna element
A antenna element is distributed in a ring along the direction parallel to the surface of the capsulation material layer away from the re-wiring layer
Above the outside of the semiconductor chip.
Preferably, the electric connection structure includes metal lead wire.
Preferably, the poly- ripple arc mirror of the high frequency is convex mirror.
Preferably, the poly- ripple arc mirror of the high frequency is polymer convex mirror.
The present invention also provides a kind of preparation method of fan-out package structure, the preparation method of the fan-out package structure
Include the following steps：
1) substrate is provided, in forming peel ply on the substrate；
2) in forming re-wiring layer on the peel ply, the re-wiring layer includes opposite first surface and second
Surface, the second surface of the re-wiring layer are in contact with the upper surface of the peel ply；
3) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the first table of the re-wiring layer
Face, and the semiconductor chip is electrically connected with the re-wiring layer；
4) in the re-wiring layer first surface formed electric connection structure, the bottom of the electric connection structure with it is described
Re-wiring layer is electrically connected；
5) capsulation material layer is formed in the first surface of the re-wiring layer, the capsulation material layer is by the semiconductor
Chip and electric connection structure enveloping plastic packaging, and the surface of the capsulation material layer away from the re-wiring layer exposes institute
State the top of electric connection structure；
6) form antenna module in surface of the capsulation material layer away from the re-wiring layer, the antenna module with
The top of the electric connection structure is electrically connected；
7) the poly- ripple arc mirror material layer of high frequency is formed in surface of the capsulation material layer away from the re-wiring layer, it is described
The antenna module is encapsulated plastic packaging by the poly- ripple arc mirror material layer of high frequency；
8) substrate is removed；
9) solder projection, the solder projection and the re-wiring layer are formed in the second surface of the re-wiring layer
It is electrically connected；
10) the poly- ripple arc mirror material layer of the high frequency is processed to form the poly- ripple arc mirror of the high frequency.
Preferably, in step 10), 3D artistic carving is used to be processed the poly- ripple arc mirror material layer of the high frequency to be formed
The poly- ripple arc mirror of high frequency.
Preferably, the poly- ripple arc mirror of the high frequency obtained in step 10) is convex mirror.
Preferably, the poly- ripple arc mirror of the high frequency is polymer convex mirror.
As described above, fan-out package structure of the present invention and preparation method thereof, has the advantages that：The present invention's
Fan-out package structure can reduce the size of antenna module by the top by antenna module independently of re-wiring layer；Together
When, by setting the poly- ripple arc mirror of high frequency in the top of the antenna module, the antenna that can dramatically increase the antenna module increases
Benefit, so as to improve the performance of the fan-out package structure.
Brief description of the drawings
Fig. 1 is shown as the flow chart of the preparation method of the fan-out package structure provided in the embodiment of the present invention one.
Fig. 2~Figure 14 is shown as each step institute of preparation method of the fan-out package structure provided in the embodiment of the present invention one
The structure diagram of presentation, wherein, Figure 14 is shown as the structure diagram of the fan-out package structure of the present invention.
Component label instructions
11 substrates
12 peel plies
13 re-wiring layers
131 first medium layers
132 metal line layers
14 semiconductor chips
141 connection soldered balls
15 electric connection structures
16 capsulation material layers
17 antenna modules
171 antenna elements
172 second dielectric layer
173 conductive plugs
The poly- ripple arc mirror of 18 high frequencies
The poly- ripple arc mirror material layer of 181 high frequencies
19 solder projections
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Figure 14.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of preparation method of fan-out package structure, the fan-out package structure
Preparation method includes the following steps：
1) substrate is provided, in forming peel ply on the substrate；
2) in forming re-wiring layer on the peel ply, the re-wiring layer includes opposite first surface and second
Surface, the second surface of the re-wiring layer are in contact with the upper surface of the peel ply；
3) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the first table of the re-wiring layer
Face, and the semiconductor chip is electrically connected with the re-wiring layer；
4) in the re-wiring layer first surface formed electric connection structure, the bottom of the electric connection structure with it is described
Re-wiring layer is electrically connected；
5) capsulation material layer is formed in the first surface of the re-wiring layer, the capsulation material layer is by the semiconductor
Chip and electric connection structure enveloping plastic packaging, and the surface of the capsulation material layer away from the re-wiring layer exposes institute
State the top of electric connection structure；
6) form antenna module in surface of the capsulation material layer away from the re-wiring layer, the antenna module with
The top of the electric connection structure is electrically connected；
7) the poly- ripple arc mirror material layer of high frequency is formed in surface of the capsulation material layer away from the re-wiring layer, it is described
The antenna module is encapsulated plastic packaging by the poly- ripple arc mirror material layer of high frequency；
8) substrate is removed；
9) solder projection, the solder projection and the re-wiring layer are formed in the second surface of the re-wiring layer
It is electrically connected；
10) the poly- ripple arc mirror material layer of the high frequency is processed to form the poly- ripple arc mirror of the high frequency.
In step 1), S1 steps and Fig. 2 and Fig. 3 in please referring to Fig.1, there is provided a substrate 11, in shape on the substrate
Into peel ply 12.
As an example, the material of the substrate 11 can include in silicon, glass, silica, ceramics, polymer and metal
One or more kinds of composite materials, its shape can be wafer shape, it is square or it is other it is any needed for shape；The present embodiment
The problems such as rupture, warpage, fracture occur for semiconductor chip in subsequent preparation process is prevented by the substrate 11.
As an example, as shown in Figure 3, there is provided after the substrate 11, further include and formed in the upper surface of the substrate 11
The step of peel ply 12.
As an example, the peel ply 12 in subsequent technique as the re-wiring layer 13 being subsequently formed and positioned at described
The separating layer between other structures and the substrate 11 on re-wiring layer 13, it preferably selects the bonding with smooth finish surface
Material is made, its must and re-wiring layer 13 there is certain combination power, to ensure re-wiring layer 13 in subsequent technique
Situations such as mobile will not be produced, in addition, it also has stronger combination power with the substrate 11, in general, itself and the base
The combination power of plate 11 needs to be more than and the combination power of the re-wiring layer 13.As an example, the material choosing of the peel ply 12
From the two-sided adhesive tape for being respectively provided with viscosity or the adhesive glue made by spin coating proceeding etc..Adhesive tape preferably uses UV adhesive tapes, it is in UV
It is easy to pull off after light irradiation.In other embodiments, physical vaporous deposition or change also can be selected in the peel ply 12
The other materials layer that vapour deposition process is formed is learned, as epoxy resin (Epoxy), silicon rubber (silicone rubber), polyamides are sub-
Amine (PI), polybenzoxazoles (PBO), benzocyclobutene (BCB) etc..In substrate 11 described in later separation, wet method can be used rotten
Erosion, chemical mechanical grinding, the methods of removing, remove the peel ply 12.
S2 steps and Fig. 4 in please referring to Fig.1, in formation re-wiring layer 13, the cloth again on the peel ply 12
Line layer 13 includes opposite first surface and second surface, the second surface of the re-wiring layer 13 and the peel ply 12
Upper surface is in contact.
In one example, as shown in figure 4, the re-wiring layer 13 includes one layer of first medium layer 131 and one layer of metal
Line layer 132, forms the re-wiring layer 13 in the upper surface of the substrate 11 and includes the following steps：
2-1) metal line layer 132 is formed in the upper surface of the substrate 11；
2-2) first medium layer 131 is formed in the upper surface of the substrate 11, the first medium layer 131 is by the metal
Line layer 132 wraps up, and the upper surface of the first medium layer 131 exposes the top of the metal line layer 132.
In another example, as shown in figure 4, the re-wiring layer 13 includes one layer of first medium layer 131 and one layer of gold
Belong to line layer 132, forming re-wiring layer 13 in the upper surface of the substrate 11 includes the following steps：
The first medium layer 131 2-1) is formed in the upper surface of the substrate 11, by photoetching and etching technics in institute
State and groove is formed in first medium layer 131, the groove defines the shape of the metal line layer 132；
2-2) in forming the metal line layer 132 in the groove.
Certainly, in another example, at least double layer of metal line layer 132 and at least one layer are included in the re-wiring layer 13
First medium layer 131, forms re-wiring layer 13 in the upper surface of the substrate 11 and includes the following steps：
2-1) first layer metal line layer 132 is formed in the upper surface of the substrate 11；
2-2) first medium layer 131 is formed in the upper surface of the substrate 11, the first medium layer 131 is by first layer institute
State metal line layer 132 to encapsulate, and the upper surface of the first medium layer 131 is higher than the upper surface of the metal line layer 132；
2-3) between if formation dried layer is electrically connected with metal line layer described in first layer 132 in the first medium layer 131
It is electrically connected between other metal line layers 132 for stacking arrangement, the adjacent metal line layer 132 via metal plug.
As an example, in above-mentioned example, the material of the metal line layer 132 can be but be not limited only to copper, aluminium, nickel, gold,
Silver, a kind of material in titanium or two kinds and two or more combined materials, and PVD, CVD, sputtering, plating or chemical plating can be used
The metal line layer 132 is formed etc. technique.The material of the first medium layer 131 can be low k dielectric；Specifically, institute
Stating first medium layer 131 can use in epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass
A kind of material, and the techniques such as spin coating, CVD, plasma enhanced CVD can be used to form the first medium layer 131.
In step 3), S3 steps and Fig. 5 in please referring to Fig.1, there is provided semiconductor chip 14, by the semiconductor core
14 upside-down mounting of piece is installed in the first surface of the re-wiring layer 13, and the semiconductor chip 14 and the re-wiring layer 13
It is electrically connected.
As an example, it can use bonding back tracking method (bond-on-trace) that the semiconductor chip 14 is bonded to institute
State the upper surface of re-wiring layer 13；The bonding back tracking method is not repeated herein known to those skilled in the art.Certainly, originally
The semiconductor chip 14 can also be bonded to by the re-wiring layer using a kind of any other bonding method in embodiment
13 upper surface.
As an example, the front of the semiconductor chip 14 is formed with the contact pad for drawing its inside function device electricity
(not shown), 14 back bonding of semiconductor chip is in the upper surface of the re-wiring layer 13, and the semiconductor chip
14 contact pad is electrically connected with the re-wiring layer 13.Specifically, the semiconductor chip 14 can be via connection soldered ball
141 are bonded to the upper surface of the re-wiring layer 13；The material of the connection soldered ball 141 can be in copper, nickel, tin and silver
It is at least one.
Addressed on it should be noted that " being electrically connected with the re-wiring layer 13 " refer both to it is described again
Metal line layer 132 in wiring layer 13 is electrically connected.
In step 4), the S4 steps and Fig. 6 that please refer to Fig.1, electricity is formed in the first surface of the re-wiring layer 13
Connection structure 15, the bottom of the electric connection structure 15 are electrically connected with the re-wiring layer 13.
As an example, the electric connection structure 15 can be metal wire or metal column etc., it is preferable that in the present embodiment,
The electric connection structure 15 is metal wire, and routing technique can be used to form metal in the first surface of the re-wiring layer 13
Line is as the electric connection structure 15.
As an example, the electric connection structure 15 can be the metal connecting line of any one metal material, it is preferable that this reality
Apply in example, the material of the electric connection structure 15 can be copper, silver, nickel, aluminium or tin etc..
In step 5), the S5 steps and Fig. 7 to Fig. 8 that please refer to Fig.1, in the first surface shape of the re-wiring layer 13
Into capsulation material layer 16, the semiconductor chip 14 and the electric connection structure 15 are encapsulated plastic packaging by the capsulation material layer 16,
And surface of the capsulation material layer 16 away from the re-wiring layer 13 exposes the top of the electric connection structure 15.
As an example, compressing and forming process, transfer shaping technology, hydraulic seal moulding process, molding bottom can be used
Fill process, capillary underfill technique, vacuum lamination process or spin coating proceeding are in the first surface of the re-wiring layer 13
Form the capsulation material layer 16.Preferably, in the present embodiment, using molded underfill technique in the re-wiring layer 13
First surface form the capsulation material layer 16, such capsulation material can be smooth and be promptly filled in the semiconductor core
Gap of the piece 14 between the electric connection structure 15, can be effectively prevented from interface debonding occur, and molded underfill is not
It can be restricted as capillary underfill technique of the prior art, greatly reduce technology difficulty, can be used for smaller
Joint gap, be more suitable for stacked structure.
As an example, the material of the capsulation material layer 16 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Fat, curable polymer-based material or curable resin-based materials etc..
In one example, the height for being initially formed the capsulation material layer 16 is higher than the height of the electric connection structure 15,
The semiconductor chip 14 and the electric connection structure 15 are encapsulated plastic packaging by i.e. described capsulation material layer 16 completely；Then, then adopt
The part capsulation material layer 16 is removed with techniques such as chemical mechanical grindings so that the upper surface of the capsulation material layer 16 and institute
State the top flush of electric connection structure 15.
Can be according to the formation capsulation material layer according to the top of the electric connection structure 15 in another example
16 so that the height of the capsulation material layer 16 of formation is just identical with the height of the electric connection structure 15.So can be with
The technique being ground to the capsulation material layer 16 is saved, so as to reduce processing step, has saved cost.
In step 6), S6 steps and Fig. 9 to Figure 10 in please referring to Fig.1, in the capsulation material layer 16 away from described
The surface of re-wiring layer 13 forms antenna module 17, and the top of the antenna module 17 and the electric connection structure 15 is electrically connected
Connect.
In one example, the antenna module 17 includes an antenna element 171 being made of helical antenna, the antenna
Unit 171 is surrounded on above the outside of the semiconductor chip 14, i.e., described antenna element 171 is in the institute of semiconductor chip 14
It is located at the periphery of the semiconductor chip 14 in the projection of plane.In the capsulation material layer 16 away from the re-wiring layer 13
Surface formed antenna module 17 specific method be：Can be in the capsulation material layer 16 away from the re-wiring layer 13
Surface forms one layer of antenna material layer, then removes the unnecessary antenna material layer by lithographic etch process, reservation it is described
Antenna material layer is used as the antenna element 171.In other examples, can also be first in the capsulation material layer 16 away from institute
The surface for stating re-wiring layer 13 forms the Patterned masking layer with opening, and the opening defines the antenna element 171
Shape and position；Then, antenna material layer then in the opening is deposited to form the antenna element 171；Finally, remove
The Patterned masking layer.
As an example, the antenna element 171 can be any helical antenna, for example, rectangular coil shape antenna or circle
Shape helical antenna etc..
In another example, the antenna is formed in surface of the capsulation material layer 16 away from the re-wiring layer 13
The specific method of component 17 is：If forming one layer in surface of the capsulation material layer 16 away from the re-wiring layer 13 includes
Dry antenna element 171 is used as the antenna module 17, wherein, the antenna element 171 can be patch antenna or helical form
Antenna.
Specifically, one layer of day wire rod can be formed on surface of the capsulation material layer 16 away from the re-wiring layer 13
The bed of material, then removes the unnecessary antenna material layer by lithographic etch process, if the antenna material layer of reservation is used as
The dry antenna element 171.In other examples, can also be first in the capsulation material layer 16 away from the re-wiring layer
13 surface forms the Patterned masking layer with opening, and described be open defines shape and the position of the antenna element 171；
Then, antenna material layer then in the opening is deposited to form the antenna element 171；Finally, removal is described graphically covers
Film layer.
It should be noted that when the antenna element 171 is patch antenna, the patch antenna can be metal derby；Institute
When to state antenna element 171 be helical antenna, the helical antenna can be formed for metal wire coiling curl, described
Helical antenna can be rectangular coil shape antenna or round spiral antenna.
It should be further noted that the antenna element 171 in above-mentioned two example is in monolayer distribution, its section knot
Structure schematic diagram is as shown in Figure 9.
In another example, as shown in Figure 10, the antenna module 17 includes multiple antenna elements 171, Duo Gesuo
State two layers that antenna element 171 is stacked on surface of the capsulation material layer 16 away from the re-wiring layer 13 in interval up and down
Distribution, and be connected between antenna element 171 described in adjacent two layers via conductive plug 173；At this time, in the capsulation material layer
16 surfaces away from the re-wiring layer 13 form antenna module 17 and include the following steps：
6-1) forming one layer in surface of the capsulation material layer 16 away from the re-wiring layer 13 includes several days
The antenna of line unit 171, several described antenna elements 171 are distributed in a ring in this layer of antenna, and the antenna element 171 is block
Shape antenna or helical antenna；
6-2) dielectric layer is formed (i.e. shown in figure in surface of the capsulation material layer 16 away from the re-wiring layer 13
Second dielectric layer 172), the antenna element is completely covered in the dielectric layer (second dielectric layer 172 i.e. shown in figure)
171；
6-3) in formation conductive plug 173, the conduction in the dielectric layer (second dielectric layer 172 i.e. shown in figure)
Embolism 173 is electrically connected with the antenna element 171；
6-4) one layer is formed again including some in the surface of the dielectric layer (second dielectric layer 172 i.e. shown in figure)
The antenna of a antenna element 171, several described antenna elements 171 are distributed in a ring in this layer of antenna, the antenna list
Member 171 is patch antenna or helical antenna.
In another example, multiple antenna elements 171 in the capsulation material layer 16 away from the re-wiring layer
13 surface can also be in three layers of stacked distribution of interval up and down, at this time, the step 2-4 in a upper example) further include afterwards
Following steps：
The surface of the dielectric layer (second dielectric layer 172 i.e. shown in figure) 6-5) formed in upper step shape again
Into one layer of dielectric layer (second dielectric layer 172 i.e. shown in figure), the dielectric layer (second dielectric layer i.e. shown in figure
172) step 6-4 is completely covered) in formed the antenna element 171；
6-6) in step 6-5) in formed the dielectric layer (second dielectric layer 172 i.e. shown in figure) in formed conduction
Embolism 173, the conductive plug 173 and step 2-4) in formed the antenna element 171 be electrically connected；
6-7) in step 6-5) in formed the dielectric layer (second dielectric layer 172 i.e. shown in figure) surface again
One layer of antenna for including several antenna elements 171 is formed, several described antenna elements 171 are in a ring in this layer of antenna
Distribution, the antenna element 171 is patch antenna or helical antenna.
In another example, multiple antenna elements 171 are in the capsulation material layer 16 away from the re-wiring layer
13 surface is also in the Multi-layers distributing for being more than three layers that interval is stacked up and down, at this time, step 6-7) further include repeat step afterwards
6-5)~step 6-7) at least once the step of.
As an example, in above-mentioned each example, the material of the dielectric layer (second dielectric layer 172 i.e. shown in figure) can
To include but are not limited to silica or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition
The techniques such as technique (CVD), plasma enhanced CVD are prepared.The material of the antenna element 171 and the conductive plug 173
It can include but are not limited to more than one or both of copper, aluminium, nickel, gold, silver, tin, titanium；Wherein, the antenna element 171
And the conductive plug 173 can pass through physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, electricity
One kind in plating or chemical plating is prepared.
In step 7), S7 steps and Figure 11 in please referring to Fig.1, in the capsulation material layer 16 away from the cloth again
The surface of line layer 13 forms the poly- ripple arc mirror material layer 181 of high frequency, and the poly- ripple arc mirror material layer 181 of high frequency is by the antenna module
17 enveloping plastic packagings.
As an example, compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination can be used
Technique or spin coating proceeding form the poly- ripple arc of the high frequency in surface of the capsulation material layer 16 away from the re-wiring layer 13
Mirror material layer 181.The material of the poly- ripple arc mirror material layer 181 of high frequency can with the material identical of the capsulation material layer 16,
The material of the poly- ripple arc mirror material layer 181 of high frequency can be but be not limited only to polyimides, silica gel, epoxy resin, curable
Polymer-based material or curable resin-based materials etc..Certainly, in other examples, the poly- ripple arc mirror material of the high frequency
The material of layer 181 can also be a kind of any other polymeric material that aerial signal can be caused to pass through.
In step 8), S8 steps and Figure 12 in please referring to Fig.1, remove the substrate 11.
As an example, grinding technics, reduction process etc. can be used to be removed the substrate 11 and the peel ply 12.
Preferably, in the present embodiment, the peel ply 12 is UV adhesive tapes, can use the mode for tearing the peel ply 12 to remove
State substrate 11.
In step 9), S9 steps and Figure 13 in please referring to Fig.1, form in the second surface of the re-wiring layer 13
Solder projection 19, the solder projection 19 are electrically connected with the re-wiring layer 13.
In one example, solder projection 19 is formed in the lower surface of the re-wiring layer 13 to include the following steps：
9-1) metal column is formed in the second surface of the re-wiring layer 13；
9-2) soldered ball is formed in the lower surface of the metal column.
As an example, the material of the metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and
Two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering,
Any of plating or chemical plating technique form the metal column.The material of the soldered ball can be copper, aluminium, nickel, gold, silver,
A kind of material or two kinds and two or more combined materials in titanium, can form the soldered ball by planting ball reflux technique.
In another example, the solder projection 19 is a soldered ball, can directly form weldering by planting ball reflux technique
Ball is as the solder projection 19.
In step 10), S10 steps and Figure 14 in please referring to Fig.1, carry out the poly- ripple arc mirror material of the high frequency, 181
Process to form the poly- ripple arc mirror 18 of the high frequency.
The poly- ripple arc mirror material layer 181 of the high frequency is carried out as an example, can use but be not limited only to 3D artistic carving
Process to form the poly- ripple arc mirror 18 of the high frequency.
As an example, the poly- ripple arc mirror 18 of high frequency is convex mirror, i.e., the described poly- ripple arc mirror 18 of high frequency is to away from the day
The convex surface radian of 17 side of line component protrusion.Since the poly- ripple arc mirror 18 of the high frequency is convex mirror, the antenna module 17 is sent
Aerial signal be easier to assemble by the poly- ripple arc mirror 18 of the high frequency for convex mirror when outwards propagating, so as to effectively carry
The antenna gain of the high antenna module 17.
As an example, the curved surface radian of the poly- ripple arc mirror 18 of high frequency can be set according to actual needs, herein not
Limit.
Embodiment two
Please continue to refer to Figure 14, the present embodiment also provides a kind of fan-out package structure, the fan-out package structure by
Preparation method described in embodiment one is prepared, and the fan-out package structure includes：Re-wiring layer 13 is described heavy
New route layer 13 includes opposite first surface and second surface；Semiconductor chip 14,14 upside-down mounting of the semiconductor chip installing
It is electrically connected in the first surface of the re-wiring layer 13, and with the re-wiring layer 13；Capsulation material layer 16, the plastic packaging
Material layer 16 is located at the first surface of the re-wiring layer 13, and the semiconductor chip 14 is encapsulated plastic packaging；Antenna module
17, the antenna module 17 is located at surface of the capsulation material layer 16 away from the re-wiring layer 13；Electric connection structure 15,
The electric connection structure 15 is located in the capsulation material layer 16, and positioned at the antenna module 17 and the re-wiring layer 13
Between, one end of the electric connection structure 15 is electrically connected with the re-wiring layer 13, and the other end is in the electricity of antenna module 17
Connection；The poly- ripple arc mirror 18 of high frequency, the poly- ripple arc mirror 18 of high frequency are located at the capsulation material layer 16 away from the re-wiring layer
13 surface, and the antenna module 17 is encapsulated into plastic packaging, for increasing the antenna gain of the antenna module 17；Solder projection
19, the solder projection 19 is located at the second surface of the re-wiring layer 13, and is electrically connected with the re-wiring layer 13.
In one example, as shown in figure 14, the re-wiring layer 13 includes：First medium layer 131；Metal line layer 132,
The metal line layer 132 is located in the first medium layer 131.
In another example, the re-wiring layer 13 includes：First medium layer 131；Metallic stacked structure, the metal
Laminated construction is located in the first medium layer 131；The metallic stacked structure includes the metal line layer 132 of Spaced arrangement
And metal plug, the metal plug is between the adjacent metal line layer 132, by the adjacent metal line layer 132
It is electrically connected.
Addressed on it should be noted that " being electrically connected with the re-wiring layer 13 " refer both to it is described again
Metal line layer 132 in wiring layer 13 is electrically connected.
As an example, the material of the first medium layer 131 include epoxy resin, silica gel, PI, PBO, BCB, silica,
One or both of phosphorosilicate glass, fluorine-containing glass combination of the above, the material of the metal line layer 132 include copper, aluminium, nickel, gold,
One or both of silver, titanium combination of the above.
As an example, the front of the semiconductor chip 14 is formed with the Contact welding for drawing its inside function device electricity
Pad, 14 back bonding of semiconductor chip is in the first surface of the re-wiring layer 13, and the semiconductor chip 14
Contact pad is electrically connected with the re-wiring layer 13.Specifically, the semiconductor chip 14 can be via connection 141 key of soldered ball
Together in the first surface of the re-wiring layer 13；It is described connection soldered ball 141 material can be copper, nickel, tin and silver in extremely
Few one kind.
As an example, the electric connection structure 15 can be metal wire or metal column etc., it is preferable that in the present embodiment,
The electric connection structure 15 is metal wire, and routing technique can be used to form metal in the first surface of the re-wiring layer 13
Line is as the electric connection structure 15.
As an example, the electric connection structure 15 can be the metal connecting line of any one metal material, it is preferable that this reality
Apply in example, the material of the electric connection structure 15 can be copper, silver, nickel, aluminium or tin etc..
As an example, the material of the capsulation material layer 16 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Fat, curable polymer-based material or curable resin-based materials etc..The upper surface of the capsulation material layer 16 is (i.e. remote
From the surface and the top of the electric connection structure 15 of the re-wiring layer 13) flush.
In one example, the antenna module 171 includes an antenna element 171,171 1 helical form of antenna element
Antenna, the helical antenna are surrounded on above the outside of the semiconductor chip 14, i.e., described helical antenna is described half
The projection of 14 place plane of conductor chip is positioned at the periphery of the semiconductor chip 14.At this time, the antenna element 171 can be
Any helical antenna, for example, rectangular coil shape antenna or round spiral antenna etc..
In one example, as shown in figure 14, the antenna module 17 includes multiple antenna elements 171, multiple described
Antenna element 171 is in monolayer distribution on surface of the capsulation material layer 16 away from the re-wiring layer 13, several institutes
State antenna element 171 to be distributed in a ring, the antenna element 171 can be patch antenna or helical antenna.Described in several
Antenna element 171 is surrounded on above the outside of the semiconductor chip 14, i.e., several described antenna elements 171 are partly led described
The projection of 14 place plane of body chip is positioned at the periphery of the semiconductor chip 14.
It should be noted that when the antenna element 171 is patch antenna, the patch antenna can be metal derby；Institute
When to state antenna element 171 be helical antenna, the helical antenna can be formed for metal wire coiling curl, described
Helical antenna can be rectangular coil shape antenna or round spiral antenna.
In another example, the antenna module 17 includes multiple antenna elements 171, multiple antenna elements
If 171 distribution of dried earth layer being stacked on surface of the capsulation material layer 16 away from the re-wiring layer 13 in being spaced up and down,
And be connected between antenna element 171 described in adjacent two layers, wherein, with multiple antenna elements 171 in the modeling in Figure 10
On surface of the closure material layer 16 away from the re-wiring layer 13 example is used as in two layers stacked of distribution of interval up and down.
As an example, the antenna module 17 further includes dielectric layer (second dielectric layer 172 i.e. shown in figure), given an account of
Matter layer (second dielectric layer 172 i.e. shown in figure) is located at least between antenna element 171 described in adjacent two layers, with institute in Figure 10
Exemplified by antenna element 171 is stated in two layers of distribution, the dielectric layer (second dielectric layer 172 i.e. shown in figure) is completely covered first
The layer antenna element 171, antenna element 171 described in the second layer are located at the dielectric layer (second dielectric layer i.e. shown in figure
172) surface away from the capsulation material layer 16.
As an example, the antenna module 17 further includes conductive plug 173, the conductive plug 173 is located at the medium
Layer (second dielectric layer 172 i.e. shown in figure) is interior, and between antenna element 171 described in adjacent two layers, and by adjacent two
The layer antenna element 171 is electrically connected.
As an example, in above-mentioned each example, the material of the dielectric layer (second dielectric layer 172 i.e. shown in figure) can
To include but are not limited to silica or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition
The techniques such as technique (CVD), plasma enhanced CVD are prepared.The material of the antenna element 171 and the conductive plug 173
It can include but are not limited to more than one or both of copper, aluminium, nickel, gold, silver, tin, titanium；Wherein, the antenna element 171
And the conductive plug 173 can pass through physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, electricity
One kind in plating or chemical plating is prepared.
As an example, the poly- ripple arc mirror 18 of high frequency is convex mirror, i.e., the described poly- ripple arc mirror 18 of high frequency is to away from the day
The convex surface radian of 17 side of line component protrusion.Since the poly- ripple arc mirror 18 of the high frequency is convex mirror, the antenna module 17 is sent
Aerial signal be easier to assemble by the poly- ripple arc mirror 18 of the high frequency for convex mirror when outwards propagating, so as to effectively carry
The antenna gain of the high antenna module 17.
As an example, the material of the poly- ripple arc mirror 18 of high frequency can be with the material identical of the capsulation material layer 16, institute
The material for stating the poly- ripple arc mirror 18 of high frequency can be but be not limited only to polyimides, silica gel, epoxy resin, curable polymer matrix
Material or curable resin-based materials etc..Certainly, in other examples, the material of the poly- ripple arc mirror 18 of the high frequency can be with
For a kind of any other polymeric material that aerial signal can be caused to pass through.
As an example, the curved surface radian of the poly- ripple arc mirror 18 of high frequency can be set according to actual needs, herein not
Limit.
In one example, the solder projection 19 includes：Metal column, the metal column are located at the re-wiring layer 13
Second surface, and be electrically connected with the re-wiring layer 13；Soldered ball, the soldered ball are located at the lower surface of the metal column.It is described
The material of metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and two or more combined materials, can
To pass through any of physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, plating or chemical plating
Technique forms the metal column.The material of the soldered ball can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and
Two or more combined materials, can form the soldered ball by planting ball reflux technique.
In another example, the solder projection 19 is soldered ball.
In conclusion fan-out package structure of the present invention and preparation method thereof, the fan-out package structure includes：Weight
New route layer, including opposite first surface and second surface；Semiconductor chip, upside-down mounting are installed in the of the re-wiring layer
One surface, and be electrically connected with the re-wiring layer；Capsulation material layer, positioned at the first surface of the re-wiring layer, and will
The semiconductor chip encapsulates plastic packaging；Antenna module, positioned at the surface of the capsulation material layer away from the re-wiring layer；Electricity
Connection structure, it is described to be electrically connected in the capsulation material layer, and between the antenna module and the re-wiring layer
One end of binding structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；The poly- ripple arc mirror of high frequency, position
Plastic packaging is encapsulated in the surface of the capsulation material layer away from the re-wiring layer, and by the antenna module, for increasing
State the antenna gain of antenna module；Solder projection, positioned at the second surface of the re-wiring layer, and with the re-wiring layer
It is electrically connected.The fan-out package structure of the present invention can reduce day by the top by antenna module independently of re-wiring layer
The size of line component；Meanwhile by setting the poly- ripple arc mirror of high frequency in the top of the antenna module, the day can be dramatically increased
The antenna gain of line component, so as to improve the performance of the fan-out package structure.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (13)
1. a kind of fan-out package structure, it is characterised in that the fan-out package structure includes：
Re-wiring layer, including opposite first surface and second surface；
Semiconductor chip, upside-down mounting is installed in the first surface of the re-wiring layer, and is electrically connected with the re-wiring layer；
Capsulation material layer, plastic packaging is encapsulated positioned at the first surface of the re-wiring layer, and by the semiconductor chip；
Antenna module, positioned at the surface of the capsulation material layer away from the re-wiring layer；
Electric connection structure, in the capsulation material layer, and between the antenna module and the re-wiring layer, institute
The one end for stating electric connection structure is electrically connected with the re-wiring layer, and the other end is electrically connected in the antenna module；
The poly- ripple arc mirror of high frequency, positioned at the surface of the capsulation material layer away from the re-wiring layer, and by the antenna module
Plastic packaging is encapsulated, for increasing the antenna gain of the antenna module；
Solder projection, is electrically connected positioned at the second surface of the re-wiring layer, and with the re-wiring layer.
2. fan-out package structure according to claim 1, it is characterised in that：The antenna module includes at least one day
Line unit, the antenna element are patch antenna or helical antenna.
3. fan-out package structure according to claim 2, it is characterised in that：The antenna module includes multiple days
Line unit, multiple antenna elements are in monolayer distribution on the surface of the capsulation material layer away from the re-wiring layer.
4. fan-out package structure according to claim 2, it is characterised in that：The antenna module includes multiple days
Line unit, multiple antenna elements are folded in interval up and down on the surface of the capsulation material layer away from the re-wiring layer
If the distribution of dried earth layer put, and be connected between antenna element described in adjacent two layers.
5. fan-out package structure according to claim 4, the antenna module further includes dielectric layer, and the dielectric layer is extremely
Less between antenna element described in adjacent two layers.
6. fan-out package structure according to any one of claim 3 to 5, it is characterised in that：Each layer antenna list
Member includes multiple antenna elements, and multiple antenna elements edges in each layer antenna element are parallel to the plastic packaging
The direction on surface of the material layer away from the re-wiring layer is distributed in above the outside of the semiconductor chip in a ring.
7. fan-out package structure according to claim 1, it is characterised in that：The electric connection structure draws including metal
Line.
8. fan-out package structure according to claim 1, it is characterised in that：The poly- ripple arc mirror of high frequency is convex mirror.
9. fan-out package structure according to claim 1, it is characterised in that：The poly- ripple arc mirror of high frequency is convex for polymer
Face mirror.
A kind of 10. preparation method of fan-out package structure, it is characterised in that the preparation method bag of the fan-out package structure
Include following steps：
1) substrate is provided, in forming peel ply on the substrate；
2) in forming re-wiring layer on the peel ply, the re-wiring layer includes opposite first surface and the second table
Face, the second surface of the re-wiring layer are in contact with the upper surface of the peel ply；
3) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the first surface of the re-wiring layer, and
The semiconductor chip is electrically connected with the re-wiring layer；
4) in the re-wiring layer first surface formed electric connection structure, the bottom of the electric connection structure with it is described again
Wiring layer is electrically connected；
5) capsulation material layer is formed in the first surface of the re-wiring layer, the capsulation material layer is by the semiconductor chip
And the electric connection structure enveloping plastic packaging, and the surface of the capsulation material layer away from the re-wiring layer exposes the electricity
The top of connection structure；
6) form antenna module in surface of the capsulation material layer away from the re-wiring layer, the antenna module with it is described
The top of electric connection structure is electrically connected；
7) the poly- ripple arc mirror material layer of high frequency, the high frequency are formed in surface of the capsulation material layer away from the re-wiring layer
The antenna module is encapsulated plastic packaging by poly- ripple arc mirror material layer；
8) substrate is removed；
9) solder projection is formed in the second surface of the re-wiring layer, the solder projection is electrically connected with the re-wiring layer
Connect；
10) the poly- ripple arc mirror material layer of the high frequency is processed to form the poly- ripple arc mirror of the high frequency.
11. the preparation method of fan-out package structure according to claim 10, it is characterised in that：In step 10), use
3D artistic carving is processed the poly- ripple arc mirror material layer of the high frequency to form the poly- ripple arc mirror of the high frequency.
12. the preparation method of fan-out package structure according to claim 10, it is characterised in that：Obtained in step 10)
The poly- ripple arc mirror of the high frequency be convex mirror.
13. the preparation method of fan-out package structure according to claim 12, it is characterised in that：The poly- ripple arc of high frequency
Mirror is polymer convex mirror.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711282022.1A CN107993935A (en) | 2017-12-07 | 2017-12-07 | Fan-out package structure and preparation method thereof |
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| CN201711282022.1A CN107993935A (en) | 2017-12-07 | 2017-12-07 | Fan-out package structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109485010A (en) * | 2018-12-06 | 2019-03-19 | 中芯长电半导体（江阴）有限公司 | MEMS package structure, wafer scale MEMS package structure and preparation method thereof |
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