CN208738205U - 一种用于洁净房内的硅片批量运输装置 - Google Patents
一种用于洁净房内的硅片批量运输装置 Download PDFInfo
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- CN208738205U CN208738205U CN201821535870.9U CN201821535870U CN208738205U CN 208738205 U CN208738205 U CN 208738205U CN 201821535870 U CN201821535870 U CN 201821535870U CN 208738205 U CN208738205 U CN 208738205U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 230000003068 static effect Effects 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000013618 particulate matter Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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CN201821535870.9U CN208738205U (zh) | 2018-09-20 | 2018-09-20 | 一种用于洁净房内的硅片批量运输装置 |
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CN201821535870.9U CN208738205U (zh) | 2018-09-20 | 2018-09-20 | 一种用于洁净房内的硅片批量运输装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112616232A (zh) * | 2020-12-23 | 2021-04-06 | 西安奕斯伟硅片技术有限公司 | 硅片处理设备 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112616232A (zh) * | 2020-12-23 | 2021-04-06 | 西安奕斯伟硅片技术有限公司 | 硅片处理设备 |
CN112616232B (zh) * | 2020-12-23 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 硅片处理设备 |
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Legal Events
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Co-patentee after: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. Patentee after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Address before: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Co-patentee before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. Patentee before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Patentee after: Shanghai Shenhe Investment Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Patentee before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221228 Address after: No. 888, Dongken Road, Qiantang New District, Hangzhou, Zhejiang 310000 Patentee after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Patentee before: Shanghai Shenhe Investment Co.,Ltd. |