CN208538842U - Semiconductor devices and lead frame for semiconductor devices - Google Patents
Semiconductor devices and lead frame for semiconductor devices Download PDFInfo
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- CN208538842U CN208538842U CN201821220188.0U CN201821220188U CN208538842U CN 208538842 U CN208538842 U CN 208538842U CN 201821220188 U CN201821220188 U CN 201821220188U CN 208538842 U CN208538842 U CN 208538842U
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- band
- pipe core
- welding disc
- core welding
- semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
A kind of semiconductor devices, pipe core welding disc with extension wavy on first level direction, it includes multiple first bands positioned at the first plane, multiple second bands positioned at the second plane and with first band alternate arrangement on first level direction, and multiple intermediate zones of connection first band and the second adjacent band.Expose from the encapsulating material for encapsulation attachment in the semiconductor element in the first band of the pipe core welding disc bottom surface of second band of the pipe core welding disc.
Description
The application is application number 201820028068.4, applying date 2018-01-09, utility model title: semiconductor devices
And the divisional application of the lead frame for semiconductor devices.
Technical field
The utility model relates to integrated circuit and the integrated circuits of encapsulation, and more particularly, to a kind of semiconductor
Device and lead frame for encapsulating integrated circuit.
Background technique
Integrated circuit (IC) tube core (die) is the miniature device that one kind is formed on semiconductor wafer (such as, silicon wafer).
Typically, this tube core is cut from chip, and is encapsulated using lead frame.Lead frame is a kind of metal framework, usually by
Copper or nickel alloy are formed, and are supported integrated circuit die and are provided the external electrical connections of the chip for encapsulation.Lead frame is usual
Including mark (flag) or pipe core welding disc (die pad) and lead finger (lead fingers).Landing pad on tube core
(bond pad) is electrically connected to the lead of lead frame via conducting wire engagement.Tube core and closing line are encapsulated using protectiveness material with shape
At encapsulation.Lead is perhaps outwardly protruded from the encapsulating or is at least flushed with the encapsulating, thus they can make terminal,
Integrated circuit is allowed to be electrically connected to other devices or printed circuit board (PCB).
With reference to Fig. 1, the amplification cross-sectional view of the semiconductor devices 100 of conventional quad-flat-pack (QFP) is shown.Device
Part 100 includes semiconductor element 102, is attached to pipe core welding disc 104 and is electrically connected to lead finger 106.Tube core 102, tube core weldering
Disk 104 and part lead finger 106 are covered by mold compound (mold compound) 108, and the mold compound 108 protects tube core
102 and lead finger 106 electrical connection it is without damage.Lead finger 106 is protruded from mold compound 108, and is bent into gull in the later period
The wing (gull-wing) shape, to provide external electrical connections to tube core 102.
With reference to Fig. 2, the semiconductor devices of the quad flat non-pin package (QFN) of conventional pipe core welding disc exposure is shown
200 amplification cross-sectional view.Device 200 is substantially similar to device 100, the pipe core welding disc 204 in addition to being attached with tube core 202 thereon
The bottom for being exposed to device 200.In addition, lead finger 206 is usually substantially flat flaky from one with pipe core welding disc 204
What lead frame was formed, lead finger 206 and pipe core welding disc 204 are generally within same plane, to also be exposed to the bottom of device 200
Portion provides external electrical connections to tube core 202.Semiconductor devices 100 compared to Fig. 1, semiconductor devices 200 is due to having exposure
Pipe core welding disc 204, transmitted to be provided for tube core 202 with external heat, play heat spreading function.However, due to 202 bottom of tube core
Portion and it is extraneous be only separated with one layer of pipe core welding disc 204, compared to device 100, the tube core 202 of device 200 is easy in device 200 and outer
It is damaged in the collision in portion.Further, since the package of the bottom surface of pipe core welding disc 204 absolutely not mold compound 208, therefore very
Be easy to cause between the top surface of pipe core welding disc 204 and mold compound 208 bond it is insecure caused by separate.
In addition, semiconductor devices how to be made to be equipped with more offer input and output in same or smaller size of encapsulation
Electrical connection lead finger simultaneously still maintain or reduce packaging cost, be always the improvement direction of industry.
Therefore, being capable of providing one kind can make tube core obtain more protections and give tube core offer heat sinking function, and
Not under the premise of increased in size, the semiconductor devices with more input/output terminals will be advantageous.
Utility model content
One embodiment according to the present utility model, the utility model provide a kind of semiconductor devices, comprising: tube core weldering
Disk, wherein the pipe core welding disc wavy extension on first level direction, including multiple first bands for being located at the first plane,
It is multiple being located at the second plane for being different from the first plane, and interlock on the first level direction with the multiple first band
The intermediate zone of the second band and multiple connection the multiple first bands and adjacent second band that arrange, wherein each institute
First band, the second band and intermediate zone is stated to extend in the second horizontal direction for being different from first level direction respectively；At least position
Multiple lead finger in the pipe core welding disc side；The semiconductor element being attached in the first band of the pipe core welding disc；
And encapsulating material, part and the semiconductor element at least about the pipe core welding disc, wherein the pipe core welding disc
The bottom surface of second band expose from the encapsulating material.
Semiconductor devices described in one embodiment according to the present utility model, wherein the pipe core welding disc is described first
Extend in horizontal direction in square wave or wedge wave.
Semiconductor devices described in one embodiment according to the present utility model, wherein the pipe core welding disc and described first
The adjacent second side in side is the first band.
The utility model further provides a kind of lead frame for semiconductor devices, comprising: pipe core welding disc, wherein institute
Pipe core welding disc wavy extension on first level direction is stated, it is multiple to be located at including multiple first bands for being located at the first plane
Different from the second plane of the first plane, and with the multiple first band on the first level direction alternate arrangement
The intermediate zone of two bands and multiple connection the multiple first bands and adjacent second band, wherein each first band,
Second band and intermediate zone extend in the second horizontal direction for being different from first level direction respectively；It is located at least in the pipe
Multiple lead finger of core pad side；And it is located at least in the connection strap of side described in the pipe core welding disc, the connection strap will
The multiple lead finger and the pipe core welding disc link.
Lead frame described in one embodiment according to the present utility model, wherein the pipe core welding disc is in the first level
Extend on direction in square wave or wedge wave.
Lead frame described in one embodiment according to the present utility model, wherein the pipe core welding disc and first side phase
Adjacent second side is the first band.
Detailed description of the invention
The detailed description of aforementioned utility model content and following the preferred embodiment in the utility model, reads in conjunction with attached drawing
It is available when reading to better understand.In order to illustrate the utility model, currently preferred embodiments are shown in the attached drawings.So
And, it should be understood that the utility model be not limited to shown in accurately arrangement and means.In the accompanying drawings:
Fig. 1 is the amplification cross-sectional view of the semiconductor devices of conventional quad-flat-pack (QFP)；
Fig. 2 is that the amplification of the semiconductor devices of the quad flat non-pin package (QFN) of conventional pipe core welding disc exposure is horizontal
Sectional view；
Fig. 3 is the bottom plan view according to the semiconductor devices of the encapsulation of the utility model one embodiment；
Fig. 4 is the cross-sectional view on the online A-A of semiconductor devices according to Fig. 3 of the utility model one embodiment；
Fig. 5 is the front view according to the semiconductor devices of Fig. 3 of the utility model one embodiment；
Fig. 6 is the cross-sectional view according to the semiconductor devices of Fig. 3 of the utility model one embodiment on broken line B-B；
Fig. 7 is the top plan view according to the unprocessed lead frame of the utility model one embodiment；
Fig. 8 is the lead frame top according to the unprocessed lead frame of Fig. 7 of the utility model one embodiment after processing
Facial planes figure；
Fig. 9 is the top plan view according to the semiconductor devices being partially encapsulated of the utility model one embodiment；
Figure 10 is the bottom plan view according to the semiconductor devices of the encapsulation of the utility model another embodiment；
Figure 11 is the cross section on the online C-C of semiconductor devices according to Figure 10 of the utility model another embodiment
Figure；
Figure 12 is the top plan view of the lead frame of another embodiment according to the present utility model；
Figure 13 is the semiconductor devices of the lead frame for being packaged with Figure 12 of another embodiment according to the present utility model
Bottom plan view；
Figure 14 is the front view of the semiconductor devices of Figure 13 of another embodiment according to the present utility model；And
Figure 15 is that the semiconductor devices of Figure 13 of another embodiment according to the present utility model is transversal on broken line D-D
Face figure.
Specific embodiment
The detailed description that following combination attached drawing illustrates is intended to as the currently preferred embodiments to the utility model
Description, and it is not intended to mean that the only form that can practice the utility model.It should be appreciated that different realities can be passed through
It applies example and realizes identical or equivalent function, and be intended to cover these embodiments in the spirit and scope of the utility model.Such as
It will appreciated by a person of ordinary skill in the art taht the utility model can be applied to a variety of encapsulation and encapsulated type.
Certain features in attached drawing have been exaggerated in diagram, and attached drawing and its element are not necessarily at correct
Ratio.In the accompanying drawings, identical number is used to indicate identical element.
Referring now to Figure 3, showing the bottom of the semiconductor devices 300 according to the encapsulation of the utility model one embodiment
Plan view.Fig. 4, Fig. 5 and Fig. 6 respectively illustrate the online A- of semiconductor devices 300 according to the utility model one embodiment Fig. 3
Cross-sectional view, front view on A and the cross-sectional view on broken line B-B.
As shown in Figures 3 to 6, semiconductor devices 300 includes pipe core welding disc 302, is in wave on first level direction 304
Shape wave extends, and includes multiple first bands 308 for being located at the first plane 306, multiple second be located at different from the first plane 306
Second band 312 of plane 310.Second band 312 and the multiple first band 308 alternate arrangement on first level direction 304.Pipe
Core pad 302 further includes the intermediate zone 314 of multiple connection first bands 308 and adjacent second band 312.Each first band 308, second
Extend in the second horizontal direction 316 for being different from first level direction 304 respectively with 312 and intermediate zone 314.Preferably,
Second side 320 adjacent with the first side 318 that it extends on first level direction 304 of middle pipe core welding disc 302 is to be located at the
The first band 308 of one plane 306, to be mentioned under the premise of not increasing the size of semiconductor devices 300 for pipe core welding disc 302
Semiconductor element is attached for the bigger upper surface of an area.Preferably, pipe core welding disc 302 is in the first level direction
Wedge shaped wave extends on 304.
Semiconductor devices 300 further includes that multiple first leads refer to 322 and refer to first lead 322 in first level direction
The second lead finger of alternate arrangement 324 on 304.Between first and second lead finger 322 and 324 and the first side 318 of pipe core welding disc 302
It separates and extends outwardly.Each first lead refers to that 322 have close to the proximal end of the pipe core welding disc 326 and far from pipe core welding disc
302 distal end 328.First lead refers to that 322 proximal end 326 is in the first plane 306, and is located at first band 308 in the second water
Square on the extension line on 316.Second lead finger 324 has close to the proximal end of pipe core welding disc 302 330 and welds far from tube core
The distal end 332 of disk 302.The proximal end 330 of second lead finger 324 is in the second plane 310, and is located at the second band 312 second
On extension line in horizontal direction 316.
Semiconductor devices 300 additionally includes the semiconductor element 334 being attached in the first band 308 of pipe core welding disc 302,
Its proximal end 326 and 330 that the first and second lead finger 322 and 324 are electrically connected to by closing line 336, and at least about pipe
The packet of the proximal end 326 and 330 of the part of core pad 302, semiconductor element 334 and the first and second lead finger 322 and 324
Closure material 338.Wherein first lead refers to that 322 distal end 328 is outwardly protruded from encapsulating material 338, the proximal end of the second lead finger 324
Expose from encapsulating material 338 bottom surface of second band 312 of 330 bottom surface and pipe core welding disc 302.Preferably, as shown in fig. 6,
Entire second lead finger 324 is in the second plane 310, and bottom surface and distal end 332 are exposed from encapsulating material 338, is exposed respectively
In the bottom surface and side of semiconductor devices 300.Since waviness extends pipe core welding disc 302 on first level direction, encapsulating
Material 338 has wrapped up the bottom of the first band 308 of pipe core welding disc 302, to provide better guarantor to semiconductor element 334
Shield, also prevents the separation between 302 upper surface of pipe core welding disc and encapsulating material 338, while the second band of pipe core welding disc 302
312 bottom surface is exposed from encapsulating material 338 again, to provide good heat sinking function for semiconductor element 334.In addition,
The proximal end for the first and second lead finger 322 and 324 being distributed along first level direction 304 is staggered, and to be located at first and second flat
Face, so that the spacing of the first and second adjacent lead finger 322 and 324 can further reduce, without bringing short-circuit risks,
To further reduce the ruler of semiconductor devices 300 in the case where not reducing the input/output terminal of semiconductor devices 300
It is very little.
A preferred embodiment according to the present utility model, semiconductor devices 300 further include multiple third lead finger 340,
It is spaced apart and extends outwardly with second side 320 of pipe core welding disc 302, and has close to 342 He of the proximal end of pipe core welding disc 302
Distal end 344 far from pipe core welding disc 302, wherein proximal end 342 is in the second plane 310.Due to second side of pipe core welding disc 302
320 be the first band 308 in the first plane 306, therefore the proximal end 342 for being located at the third lead finger 340 of the second plane 310 can
To be more nearly second side 320 of pipe core welding disc 302 on first level direction 304, thus not reducing input/output terminal number
Under the premise of, reduce semiconductor devices 300 in the anti-width on 304 of first level.Preferably, third lead finger 340
Bottom surface and distal end 344 are exposed from encapsulating material 338, are respectively exposed to the bottom surface and side of semiconductor devices 300.
Fig. 7 is the top plan view according to the unprocessed lead frame 400 of the utility model one embodiment.According to this reality
With a novel preferred embodiment, the unprocessed lead frame 400 is by carrying out punching press to a conductive metal sheet or cutting
It cuts and to be formed.The unprocessed lead frame 400 includes die pad areas 402 comprising multiple first bands 404, with first
With 404 on first level direction 304 alternate arrangement multiple second bands 406, and the adjacent first band 404 of connection and the second band
406 intermediate zone 408.Preferably, adjacent with the first side extended on first level direction 304 in die pad areas 402
Two opposite second side be all first band 404.
The unprocessed lead frame 400 further includes multiple first and second lead finger 410 and 412, with pipe core welding disc
The first side that region 402 extends on first level direction 304 is spaced apart and extends outwardly.Wherein first lead refers to 410 and
Two lead finger 412 alternate arrangement on first level direction 304, and first lead refers to that 410 are located at first band 404
On extension line in two horizontal directions 316, the second lead finger 412 is located at the second band 406 in the second horizontal direction 316
On extension line.A preferred embodiment according to the present utility model, the unprocessed lead frame 400 further include that multiple thirds are drawn
Line refers to 414, is spaced apart and extends outwardly with second side of die pad areas 402.First lead refers to 410, the second lead finger
412, third lead finger 414 and die pad areas 402 are linked together by connection strap 416.
Fig. 8 is the lead of unprocessed lead frame 400 after processing in Fig. 7 according to the utility model one embodiment
The top plan view of frame 500.A preferred embodiment according to the present utility model, by unprocessed lead frame 400 according to
The mountain broken line being represented by dashed line in Fig. 7 and the paddy broken line indicated with chain-dotted line are bent or are molded, can be very simple and convenient
Lead frame 500 after forming the processing in Fig. 8.Lead frame 500 includes a wavy extension on first level direction 304
Pipe core welding disc 502, wherein first band 404 is located at the first plane, and the second band 406 is located at second different from the first plane 306
Plane 310, intermediate zone 408 link the adjacent first band 404 and the second band 406 positioned at Different Plane.Preferably, pipe core welding disc
502 extend on the first level direction in square wave or wedge wave.In one embodiment of the utility model, first lead
Refer to that 410 are located at the first plane 306, the second lead finger 412 is located at the second plane 310, and connection strap 416 is in first level direction 304
Upper corresponding wavy extension.Preferably, third lead finger 414 is located at the second plane 310.
Fig. 9 is the top plan view according to the semiconductor devices 600 being partially encapsulated of the utility model one embodiment.
Semiconductor devices 600 includes lead frame 500, and attaches to the semiconductor element 334 of the pipe core welding disc 502 of wire frame 500, is passed through
Closing line 336 is electrically connected with the first, second, and third lead finger 410,412 and 414.Then by being encapsulated with encapsulating material 338
Semiconductor element 334, lead frame 500 and closing line 336, removal connection strap 416 make each lead finger and pipe core welding disc 502 respective
Independent, bending first lead refers to 410, forms semiconductor devices 300 shown in Fig. 3-6, wherein the second band of pipe core welding disc 502
406 bottom surface, second and the bottom surface of third lead finger 412 and 414 exposed from encapsulating material 338.Preferably, encapsulating material
338 be a kind of mold compound.
Figure 10 is according to the bottom plan view of the semiconductor devices 700 of the encapsulation of the utility model another embodiment, figure
11 be the amplification cross-sectional view on the online C-C of semiconductor devices 700 in Figure 10 according to another embodiment of the utility model.
Semiconductor devices 700 and the semiconductor devices 300 in Fig. 3-6 are substantially similar, in addition to pipe core welding disc 702 is in the first level side
The wave that is square on to 304 extends.
Figure 12 is the top plan view of the lead frame 800 of another embodiment according to the present utility model.Lead frame 800 with
Lead frame 500 in Fig. 8 is substantially similar, and in addition to first lead refers to that 802 are located at the second plane, the second lead finger 804 is located at first
Plane, so that vertical with the first and second bands 404 and 406 respectively be staggered, so as to be more nearly the first of pipe core welding disc 502
Side 318, so that further reducing the size of semiconductor devices under the premise of not reducing input/output terminal number.
Figure 13 is the semiconductor devices of the lead frame 800 for being packaged with Figure 12 of another embodiment according to the present utility model
900 bottom plan view, Figure 14 be semiconductor devices 900 in Figure 13 of another embodiment according to the present utility model just
Face view and Figure 15 are semiconductor devices 900 in Figure 13 of another embodiment according to the present utility model in broken line D-D
On cross-sectional view.Semiconductor devices 900 and semiconductor devices 300 shown in Fig. 3-Fig. 6 are substantially similar, in addition to first lead
Refer to that 802 are proximally located at the second plane, the second lead finger 804 is proximally located at the first plane, thus respectively with first and second
Band 404 and 406 is vertically staggered, so that the proximal end of the first and second lead finger 802 and 804 can be more nearly pipe core welding disc 502
The first side so that further reducing the size of semiconductor devices under the premise of not reducing input/output terminal number.
The specification of statement the preferred embodiment in the utility model be in order to illustrate and description purpose, and be not intended to specifically
Bright or limitation the utility model is disclosed form.Those skilled in the art, which will be appreciated that, is not departing from its wide in range reality
In the case where with novel design, above-described embodiment can be made a change.It is therefore to be understood that the utility model is not limited to public affairs
The specific embodiment opened, but cover repairing in the spirit and scope of the utility model as defined in appended claims
Change.
Claims (6)
1. a kind of semiconductor devices, comprising:
Pipe core welding disc, wherein the pipe core welding disc wavy extension on first level direction, including multiple to be located at first flat
The first band in face, it is multiple being located at the second plane for being different from the first plane, and with the multiple first band in first water
Square upwards transition of the second band of alternate arrangement and multiple connections the multiple first band and adjacent second band
Band, wherein each first band, the second band and intermediate zone are respectively in the second horizontal direction for being different from first level direction
Upper extension；
It is located at least in multiple lead finger of the pipe core welding disc side；
The semiconductor element being attached in the first band of the pipe core welding disc；And
Encapsulating material, part and the semiconductor element at least about the pipe core welding disc, wherein the pipe core welding disc
The bottom surface of second band expose from the encapsulating material.
2. semiconductor devices as described in claim 1, wherein the pipe core welding disc is in square wave on the first level direction
Or wedge wave extends.
3. semiconductor devices as described in claim 1, wherein pipe core welding disc second side adjacent with first side is
The first band.
4. a kind of lead frame for semiconductor devices, comprising:
Pipe core welding disc, wherein the pipe core welding disc wavy extension on first level direction, including multiple to be located at first flat
The first band in face, it is multiple being located at the second plane for being different from the first plane, and with the multiple first band in first water
Square upwards transition of the second band of alternate arrangement and multiple connections the multiple first band and adjacent second band
Band, wherein each first band, the second band and intermediate zone are respectively in the second horizontal direction for being different from first level direction
Upper extension；
It is located at least in multiple lead finger of the pipe core welding disc side；And
It is located at least in the connection strap of side described in the pipe core welding disc, the connection strap is by the multiple lead finger and the tube core
Pad connection.
5. lead frame as claimed in claim 4, wherein the pipe core welding disc is in square wave or wedge on the first level direction
Shape wave extends.
6. lead frame as claimed in claim 4, wherein pipe core welding disc second side adjacent with first side is described
First band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821220188.0U CN208538842U (en) | 2018-01-09 | 2018-01-09 | Semiconductor devices and lead frame for semiconductor devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820028068.4U CN207896084U (en) | 2018-01-09 | 2018-01-09 | Semiconductor devices and lead frame for semiconductor devices |
| CN201821220188.0U CN208538842U (en) | 2018-01-09 | 2018-01-09 | Semiconductor devices and lead frame for semiconductor devices |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820028068.4U Division CN207896084U (en) | 2018-01-09 | 2018-01-09 | Semiconductor devices and lead frame for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
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| CN208538842U true CN208538842U (en) | 2019-02-22 |
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| CN201821220188.0U Active CN208538842U (en) | 2018-01-09 | 2018-01-09 | Semiconductor devices and lead frame for semiconductor devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022902A (en) * | 2018-01-09 | 2018-05-11 | 陈萌奇 | Semiconductor devices and the lead frame for semiconductor devices |
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2018
- 2018-01-09 CN CN201820028068.4U patent/CN207896084U/en active Active
- 2018-01-09 CN CN201821220188.0U patent/CN208538842U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022902A (en) * | 2018-01-09 | 2018-05-11 | 陈萌奇 | Semiconductor devices and the lead frame for semiconductor devices |
| CN108022902B (en) * | 2018-01-09 | 2024-05-10 | 陈萌奇 | Semiconductor device and lead frame for semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN207896084U (en) | 2018-09-21 |
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