CN205752156U - A kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe - Google Patents
A kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe Download PDFInfo
- Publication number
- CN205752156U CN205752156U CN201620463814.3U CN201620463814U CN205752156U CN 205752156 U CN205752156 U CN 205752156U CN 201620463814 U CN201620463814 U CN 201620463814U CN 205752156 U CN205752156 U CN 205752156U
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- China
- Prior art keywords
- leadframe
- wire
- melting
- lead
- black ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Lead Frames For Integrated Circuits (AREA)
Abstract
This utility model relates to a kind of IC black ceramics low-melting-point glass shell and covers aluminum leadframe, including the leadframe base formed by iron-nickel alloy band, the upper surface middle part of described leadframe base is compounded with an aluminium lamination along its length, on this aluminium lamination and be positioned at described leadframe base middle position and offer one for placing the cavity of IC chip, described cavity week, side was provided with the some lead-in wires extended inside lead frame lateral, and the medial end surface recombination of described lead-in wire has an aluminium lamination；Described lead-in wire internal layer end one Si-Al wire is electrically connected with the weld pad of IC chip.The beneficial effects of the utility model are: can realize more preferable aluminum aluminum bonding, it is possible to the reliability of encapsulation integrated circuit ultrasonic bonding is effectively ensured.
Description
Technical field
This utility model relates to microelectronics Packaging field, particularly relates to a kind of IC black ceramics low-melting-point glass shell and covers aluminum leadframe.
Background technology
Lead frame is as the chip carrier of integrated circuit, the electrical connection of chip internal circuits exit and outer lead is realized by means of bonding material (spun gold, aluminium wire, copper wire), form the key structure part of electric loop, it serves in the semiconductor integrated block of the function served as bridge overwhelming majority connected with outer lead and is required for using lead frame, and it is basic material important in electronics and information industry.
Utility model content
The purpose of this utility model is for above weak point, it is provided that a kind of IC black ceramics low-melting-point glass package casing covers aluminum leadframe, it is achieved be preferably bonded, and improves the reliability of encapsulation.
The scheme that this utility model solution technical problem is used is: a kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe, including the leadframe base formed by iron-nickel alloy band, the upper surface middle part of described leadframe base is compounded with one first aluminium lamination along its length, on this first aluminium lamination and be positioned at described leadframe base middle position and offer one for placing the cavity of IC chip, described cavity week, side was provided with the some lead-in wires extended inside lead frame lateral, and the medial end surface recombination of described lead-in wire has the second aluminium lamination；Described lead-in wire internal layer end one Si-Al wire is electrically connected with the weld pad of IC chip.
Further, a black ceramics substrate also it is equipped with in described cavity.
Further, described black ceramics substrate is through the weld pad sealing-in of low-melting-point glass Yu IC chip.
Further, described lead-in wire is total up to 2N bar, and wherein N is the positive integer more than or equal to 1, and described lead-in wire is symmetricly set in leadframe base both sides.
Further, the material of the weld pad of described IC chip is aluminum.
Compared with prior art, this utility model has following beneficial effect: owing to the weld pad of IC chip is by silicon semiconductor surface vacuum aluminizer, manufactured by the method for photoetching afterwards, the material of weld pad is aluminum, it also it is aluminium lamination on the medial end bonding region of lead frame of the present utility model, the wire rod of bonding is Si-Al wire, this three can well be bonded for commaterial, the intermetallic compound of fragility will not be produced, it is possible to the reliability of encapsulation integrated circuit ultrasonic bonding is effectively ensured at the position connected.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings this utility model patent is further illustrated.
Fig. 1 is the structural representation of the lead frame of this utility model embodiment.
Fig. 2 is the structural representation of the cavity of this utility model embodiment.
In figure: 1-leadframe base；2-cavity；3-the first aluminium lamination；4-IC chip；5-low-melting-point glass；6-black ceramics substrate；7-Si-Al wire；8-goes between.
Detailed description of the invention
With detailed description of the invention, this utility model is further illustrated below in conjunction with the accompanying drawings.
As shown in Fig. 1～2, a kind of IC black ceramics low-melting-point glass shell of the present embodiment covers aluminum leadframe, including the leadframe base 1 formed by iron-nickel alloy band, the upper surface middle part of described leadframe base 1 is compounded with one first aluminium lamination 3 along its length, on this first aluminium lamination 3 and be positioned at described leadframe base 1 middle position and offer one for placing the cavity 2 of IC chip 4,2 weeks sides of described cavity are provided with the some lead-in wires 8 extended inside lead frame lateral, and the medial end surface recombination of described lead-in wire 8 has one second aluminium lamination；Described lead-in wire 8 internal layer end one Si-Al wire 7 is electrically connected with the weld pad of IC chip 4.
From the foregoing, the beneficial effects of the utility model are: the thickness of described band is 0.25mm, middle part at the upper surface of iron-nickel alloy band, the processing method using calendering, it is compounded with the aluminium lamination that a layer thickness is 7～15um thickness thereon, and uses high-precision pressure machine and precision die that compound iron-nickel alloy band is struck out series lead wire frame.Owing to the weld pad of IC chip 4 is by silicon semiconductor surface vacuum aluminizer, manufactured by the method for photoetching afterwards, the material of weld pad is aluminum, it also it is aluminium lamination on the medial end bonding region of lead frame of the present utility model, the wire rod of bonding is Si-Al wire 7, this three can well be bonded for commaterial, will not produce the intermetallic compound of fragility at the position connected, it is possible to the reliability of encapsulation integrated circuit ultrasonic bonding is effectively ensured.
In the present embodiment, a black ceramics substrate 6 also it is equipped with in described cavity 2.
In the present embodiment, described black ceramics substrate 6 welds with the weld pad of IC chip 4 through low hot melt glass 5.Cavity 2 in the middle part of lead frame and black ceramics substrate 6 are collectively forming the space placing IC chip 4.
In the present embodiment, described lead-in wire 8 is total up to 2N bar, and wherein N is the positive integer more than or equal to 1, and described lead-in wire 8 is symmetricly set in leadframe base 1 both sides.Described lead-in wire 8 number can cover dual in-line package 8 ~ 40 line complete series, and the lead frame of identical lead-in wire 8 number can also arrange various sizes of inner chamber specification.Lead-in wire 8 in lead frame of the present utility model uses ultrasonic bonding, effective, and tension intensity is high.
In the present embodiment, the material of the weld pad of described IC chip 4 is aluminum.
In sum, a kind of IC black ceramics low-melting-point glass shell of the present utility model covers aluminum leadframe, and technique is simple, binding affinity good, it is possible to the reliability of encapsulation integrated circuit ultrasonic bonding is effectively ensured.
Above-listed preferred embodiment; the purpose of this utility model, technical scheme and advantage are further described; it is it should be understood that; the foregoing is only preferred embodiment of the present utility model; not in order to limit this utility model; all within spirit of the present utility model and principle, any modification, equivalent substitution and improvement etc. made, within should be included in protection domain of the present utility model.
Claims (5)
1. an IC black ceramics low-melting-point glass shell covers aluminum leadframe, it is characterized in that: include being covered aluminum leadframe matrix by what iron-nickel alloy band was formed, the upper surface middle part of described leadframe base is compounded with one first aluminium lamination along its length, on this first aluminium lamination and be positioned at described leadframe base middle position and offer one for placing the cavity of IC chip, described cavity week, side was provided with the some lead-in wires extended inside lead frame lateral, and the medial end surface recombination of described lead-in wire has the second aluminium lamination；Described lead-in wire internal layer end one Si-Al wire is electrically connected with the weld pad of IC chip.
A kind of IC black ceramics low-melting-point glass shell the most according to claim 1 covers aluminum leadframe, it is characterised in that: also it is equipped with a black ceramics substrate in described cavity.
A kind of IC black ceramics low-melting-point glass shell the most according to claim 2 covers aluminum leadframe, it is characterised in that: described black ceramics substrate welds with the weld pad of IC chip through hot melt glass.
A kind of IC black ceramics low-melting-point glass shell the most according to claim 1 covers aluminum leadframe, it is characterised in that: described lead-in wire is total up to 2N bar, and wherein N is the positive integer more than or equal to 1, and described lead-in wire is symmetricly set in leadframe base both sides.
A kind of IC black ceramics low-melting-point glass shell the most according to claim 1 covers aluminum leadframe, it is characterised in that: the material of the weld pad of described IC chip is aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620463814.3U CN205752156U (en) | 2016-05-21 | 2016-05-21 | A kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620463814.3U CN205752156U (en) | 2016-05-21 | 2016-05-21 | A kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205752156U true CN205752156U (en) | 2016-11-30 |
Family
ID=57365386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620463814.3U Active CN205752156U (en) | 2016-05-21 | 2016-05-21 | A kind of IC black ceramics low-melting-point glass shell covers aluminum leadframe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205752156U (en) |
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2016
- 2016-05-21 CN CN201620463814.3U patent/CN205752156U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: An aluminum coated lead frame for IC black ceramic low melting glass shell Effective date of registration: 20220408 Granted publication date: 20161130 Pledgee: Bank of Xiamen Limited by Share Ltd. Nanping branch Pledgor: FUJIAN NANPING SANJIN ELECTRONICS Co.,Ltd. Registration number: Y2022350000038 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |