CN208538835U - Electrode and power semiconductor modular - Google Patents
Electrode and power semiconductor modular Download PDFInfo
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- CN208538835U CN208538835U CN201821109654.8U CN201821109654U CN208538835U CN 208538835 U CN208538835 U CN 208538835U CN 201821109654 U CN201821109654 U CN 201821109654U CN 208538835 U CN208538835 U CN 208538835U
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- electrode
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Abstract
The utility model belongs to power electronics field, is related to a kind of electrode and power semiconductor modular.Electrode includes head, buffer part and pedestal, buffer part is connected between head and pedestal, buffer part includes at least one first buffer cell, first buffer cell includes the first wave structure and the second wave structure arranged side by side, first wave structure and the second wave structure extend along the length direction of electrode, and the first wave structure rides out in the opposite direction with the second wave structure.Electrode is when by extraneous stress, first wave structure and the second wave structure can generate deformation, the extraneous stress integrated distribution that is subject to electrode rides out place at the place of riding out of the first wave structure and the second wave structure, and stress is uniform in size consistent at this, maximum stress suffered by electrode can be reduced in this way, the stress distribution for alleviating the welding surface of the pedestal of electrode avoids the welding surface of the pedestal of electrode from falling off failure, the service life of electrode is caused to reduce.
Description
Technical field
The utility model belongs to power electronics field, more particularly to a kind of electrode and power semiconductor modular.
Background technique
With power IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) mould
Application of the block in photovoltaic art, various environmental factors influence the installation reliability of power IGBT module increasing.In light
In volt field, generally welding electrode will be needed to be welded in power IGBT module, in various adverse circumstances, traditional need weld electricity
Pole has been unable to satisfy the requirement of its soldering reliability, more and more power IGBT modules manufacturer start by the way of crimping into
The installation of row power IGBT module.All electrodes can be pressed together using the power IGBT module of the electrode with buffer structure
Enter control circuit board, guarantees to be uniformly distributed the stress that electrode itself is subject to, while making electrode when being pressed into electrode and extracting electrode
The stress that is born of bottom (i.e. welding surface) it is minimum；In vibration environment, the stress that electrode is subject to can be sufficiently discharged, it is ensured that function
Installation effectiveness is improved while the installation reliability of rate IGBT module again and reduces cost of labor.
Existing electrode, easily deforms, and in severe vibration environment, the service life of electrode is easily influenced, to making for electrode
With making troubles, the application range of electrode is limited.
Utility model content
The technical problem to be solved by the utility model is to easily deforming to reduce electrode for existing electrode
The technical issues of service life, provides a kind of electrode and power semiconductor modular.
In order to solve the above technical problems, on the one hand, the utility model embodiment provides a kind of electrode, including it is head, slow
Rush portion and pedestal, the buffer part is connected between the head and the pedestal, the buffer part include at least one first
Buffer cell, first buffer cell include the first wave structure and the second wave structure arranged side by side, the first wave
Unrestrained structure and second wave structure extend along the length direction of the electrode, first wave structure and second wave
Unrestrained structure rides out in the opposite direction.
Optionally, first buffer cell is equipped with first through hole, and the first through hole is located at first wave structure
Between the second wave structure.
Optionally, the buffer part further includes the first connection unit, first connection unit be connected to the head with
Between first buffer cell on the head.
Optionally, the buffer part further includes the second connection unit, and second connection unit is connected to close to the bottom
Between first buffer cell and the pedestal of seat.
Optionally, second connection unit is the plate perpendicular to the pedestal.
Optionally, second connection unit is fixed on the middle position of the upper surface of the pedestal；Alternatively,
Second connection unit is fixed on the marginal position of the upper surface of the pedestal.
Optionally, the buffer part further includes at least one second buffer cell, and second buffer cell is connected to institute
It states between the first connection unit and first buffer cell, second buffer cell includes the third wave knot being set side by side
Structure and the 4th wave structure, the third wave structure and the 4th wave structure extend along the length direction of the electrode,
The third wave structure rides out in the opposite direction with the 4th wave structure.
Optionally, second buffer cell is equipped with the second through-hole, and second through-hole is located at the third wave structure
Between the 4th wave structure.
Optionally, first wave structure lines up one along the length direction of the electrode with the third wave structure
Row, second wave structure are in line with the 4th wave structure along the length direction of the electrode, the first wave
Unrestrained structure rides out in the opposite direction with the third wave structure, second wave structure and the 4th wave structure to
Opposite direction rides out.
Optionally, tooth socket is formed between first connection unit and the head.
According to electrode provided by the embodiment of the utility model, buffer part, buffer part setting are set between head and pedestal
There is at least one first buffer cell, the first buffer cell includes the first wave for being arranged side by side and extending along the length direction of electrode
Unrestrained structure and the second wave structure, the first wave structure ride out in the opposite direction with the second wave structure.First wave structure
There is certain deformation quantity with the second wave structure, electrode is when by extraneous stress, the first wave structure and the second wave knot
Structure can generate deformation, and the extraneous stress integrated distribution for being subject to electrode rides out place and the second wave structure the first wave structure
Ride out place, and uniform in size consistent, the such energy that rides out place's stress of the place of riding out of the first wave structure and the second wave structure
Maximum stress suffered by electrode is reduced, alleviates the stress distribution of the welding surface of the pedestal of electrode, avoids the welding of the pedestal of electrode
Emaciated face falls failure, and the service life of electrode is caused to reduce.Further, this kind of electrode structure is by ambient pressure and pulling force
When, electrode has maximum deformation quantity, can extend the service life of electrode.In addition, the electrode is compared with existing electrode, the electricity
The extraneous stress that pole is subject to is greatly lowered, even if also can guarantee the intensity of electrode in rugged environment, is allowed to be not easily broken
And deformation, the reliability of the welding surface of the pedestal of electrode is increased, the service life of electrode is extended.
On the other hand, the utility model embodiment provides a kind of power semiconductor modular, including electrode as described above.
According to the power semiconductor modular of the utility model embodiment, electrode can be reduced the external world that electrode itself is subject to and answer
Power, meanwhile, the extraneous stress for being subject to electrode is uniformly distributed makes the welding surface fixation of electrode more firm on the electrode, increases electricity
The service life of pole, so that the installation reliability of power semiconductor modular be made to be promoted, the reliability level that product uses is promoted, and is increased
Add the service life of power semiconductor modular.
In another aspect, the utility model embodiment provides a kind of power semiconductor modular, including substrate, sealant, encapsulation
Shell and electrode as described above, the encapsulating housing are provide on the substrate to form cavity, and the sealant is filled in
In the cavity and cladding substrate, the upper surface of the sealant is in first buffer cell close to the pedestal
Lower section, the roof of the encapsulating housing is provided with perforation, and the pedestal of the electrode is fixed on the substrate, and the electrode is worn
The perforation is crossed, the head of the electrode is plugged on external pcb board.
According to the power semiconductor modular of the utility model embodiment, the pedestal of electrode is fixed on substrate, and substrate has
The effect of insulation, heat dissipation and support.Encapsulating housing is located to form cavity on substrate, and sealant is filled in cavity and is wrapped
Cover substrate, make the pedestal of electrode is firm to be connected on substrate, meanwhile, sealant in cavity inside chip and aluminum steel etc. rise
To the effect of protection, insulation and heat dissipation.The upper surface of sealant is in the lower section of the buffer cell close to the pedestal, guarantees electricity
In installation or removal, the extraneous stress that electrode can be made to be subject to by buffer part is evenly distributed for pole, reduces the external world that electrode is subject to
Stress, and then the extraneous stress that the welding surface for reducing the pedestal of electrode is subject to, guarantee the fixing of electrode.Head is located at encapsulating shell
The top of body, pcb board are fixed on head, and this connection type of electrode and pcb board can make the head of multiple electrodes simultaneously
It is pressed into pcb board, saves the set-up time of electrode.
Detailed description of the invention
Fig. 1 is the schematic diagram for the electrode that the utility model first embodiment provides；
Fig. 2 is another schematic diagram for the electrode that the utility model first embodiment provides；
Fig. 3 is the schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 4 is another schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 5 is the schematic diagram for the electrode that the utility model 3rd embodiment provides；
Fig. 6 is another schematic diagram for the electrode that the utility model 3rd embodiment provides；
Fig. 7 is the schematic diagram for the electrode that the utility model fourth embodiment provides；
Fig. 8 is another schematic diagram for the electrode that the utility model fourth embodiment provides；
Fig. 9 is the schematic diagram for the power semiconductor modular that the utility model sixth embodiment provides.
Appended drawing reference in specification is as follows:
1, electrode；11, head；12, buffer part；121, the first buffer cell；1211, the first wave structure；1212, second
Wave structure；1213, first through hole；122, the first connection unit；123, the second connection unit；124, the second buffer cell；
1241, third wave structure；1242, the 4th wave structure；1243, the second through-hole；13, pedestal；14, tooth socket；
2, lower layer's copper sheet；3, ceramic layer；4, upper layer copper sheet；5, sealant；6, encapsulating housing；7, cavity；8, pcb board.
Specific embodiment
The technical issues of in order to keep the utility model solved, technical solution and beneficial effect are more clearly understood, below
In conjunction with accompanying drawings and embodiments, the utility model is described in further detail.It should be appreciated that specific reality described herein
It applies example to be only used to explain the utility model, is not used to limit the utility model.
As shown in Figures 1 to 9, electrode 1 provided by the embodiment of the utility model, including head 11, buffer part 12 and pedestal
13, the buffer part 12 is connected between the head 11 and the pedestal 13, the buffer part 12 include at least one first
Buffer cell 121, first buffer cell 121 include the first wave structure 1211 and the second wave structure arranged side by side
1212, length direction of first wave structure 1211 with second wave structure 1212 along the electrode 1 extends, described
First wave structure 1211 rides out in the opposite direction with second wave structure 1212.
According to electrode 1 provided by the embodiment of the utility model, buffer part 12, buffering are set between head 11 and pedestal 13
Portion 12 is provided at least one first buffer cell 121, and the first buffer cell 121 includes being arranged side by side and along the length of electrode 1
The first wave structure 1211 and the second wave structure 1212 that direction extends, the first wave structure 1211 and the second wave structure
1212 ride out in the opposite direction.First wave structure 1211 and the second wave structure 1212 have certain deformation quantity, electrode 1
When by extraneous stress, the first wave structure 1211 and the second wave structure 1212 can generate deformation, be subject to electrode 1 outer
Boundary's stress concentration distribution rides out place, and the first wave at the place of riding out of the first wave structure 1211 and the second wave structure 1212
The place of riding out of structure 1211 and the second wave structure 1212 to ride out place's stress uniform in size consistent, 1 institute of electrode can be reduced in this way
The maximum stress received alleviates the stress distribution of the welding surface of the pedestal 13 of electrode 1, avoids the welding emaciated face of the pedestal 13 of electrode 1
Failure is fallen, the service life of electrode 1 is caused to reduce.Further, this kind of 1 structure of electrode be when by ambient pressure and pulling force,
Electrode 1 has maximum deformation quantity, can extend the service life of electrode 1.In addition, the electrode 1 compared with existing electrode 1, is somebody's turn to do
The extraneous stress that electrode 1 is subject to is greatly lowered, even if also can guarantee the intensity of electrode 1 in rugged environment, is allowed to be not easy
It fractures and deforms, increase the reliability of the welding surface of the pedestal 13 of electrode 1, extend the service life of electrode 1.
There is the electrode 1 of this kind of structure maximum deformation quantity to refer to: when electrode 1 is by external tensile force, the first wave knot
The largest deformation amount of structure 1211 and the second wave structure 1212 is when being fully straightened；When electrode 1 is by ambient pressure,
The place of riding out of the place of riding out of first wave structure 1211 and the second wave structure 1212 at 0 degree when.The maximum of the electrode 1
Deformation quantity is related with the size of the second wave structure 1212 to the first wave structure 1211.
First embodiment
As shown in Figures 1 and 2, in the first embodiment, the buffer part 12 further includes the first connection unit 122, described
First connection unit 122 is connected to the head 11 and between first buffer cell 121 on the head 11.It is described
Tooth socket 14 is formed between first connection unit 122 and the head 11, can make electrode 1 when by extraneous stress in this way, electrode 1
More evenly, the extraneous stress that electrode 1 is subject to further decreases stress.
It as shown in Figures 1 and 2, further include the second connection unit 123, second connection unit in the buffer part 12
123 are connected between first buffer cell 121 and the pedestal 13 of the pedestal 13.Second connection unit
123 be the plate perpendicular to the pedestal 13.Second connection unit 123 is fixed on the centre of the upper surface of the pedestal 13
Position.When can make electrode 1 by extraneous stress in this way, make buffer part 12 is more firm to be fixed on pedestal 13.
Second embodiment
The difference of second embodiment and first embodiment is as follows:
As shown in Figures 3 and 4, in a second embodiment, first buffer cell 121 is equipped with first through hole 1213, institute
First through hole 1213 is stated between first wave structure 1211 and the second wave structure 1212.In the first buffer cell
121 are equipped with first through hole 1213, when can make electrode 1 by extraneous stress, further decrease the extraneous stress that electrode 1 is subject to,
Alleviate the stress distribution of the welding surface of the pedestal 13 of electrode 1, improves the soldering reliability of electrode 1.
3rd embodiment
The difference of 3rd embodiment and second embodiment is as follows:
As shown in Figures 5 and 6, in the third embodiment, second connection unit 123 is fixed on the upper of the pedestal 13
The marginal position on surface.
Fourth embodiment
The difference of fourth embodiment and second embodiment is as follows:
As shown in Figures 7 and 8, in the fourth embodiment, the buffer part 12 further includes at least one second buffer cell
124, second buffer cell 124 is connected between first connection unit 122 and first buffer cell 121, institute
Stating the second buffer cell 124 includes the third wave structure 1241 and the 4th wave structure 1242 being set side by side, the third wave
Length direction of the unrestrained structure 1241 with the 4th wave structure 1242 along the electrode 1 extends, the third wave structure
1241 ride out in the opposite direction with the 4th wave structure 1242.
Buffer part 12 increases at least one second buffer cell 124, can further decrease the extraneous stress that electrode 1 is subject to,
To further alleviate the extraneous stress that the welding surface of the pedestal 13 of electrode 1 is subject to, the soldering reliability of welding surface is improved, is extended
The service life of electrode 1 is high.Simultaneously as the place of riding out of the first wave structure 1211 and the second wave structure 1212 ride out place
The maximum stress being subject to is reduced, when the extraneous stress that electrode 1 is subject to is less than the yield stress of the material of production electrode 1 itself
When, the deformation quantity that electrode 1 generates will be smaller, that is, apparent deformation will not occur for electrode 1 at this time, can extend electrode 1 in this way
Service life.
As shown in Figures 7 and 8, second buffer cell 124 is equipped with the second through-hole 1243, second through-hole 1243
Between the third wave structure 1241 and the 4th wave structure 1242.The second through-hole is equipped on the second buffer cell 124
1243, when can make electrode 1 by extraneous stress, the extraneous stress that electrode 1 is subject to is further decreased, alleviates the pedestal 13 of electrode 1
Welding surface stress distribution, improve electrode 1 soldering reliability.
As shown in Figures 7 and 8, first wave structure 1211 is with the third wave structure 1241 along the electrode 1
Length direction be in line, second wave structure 1212 is with the 4th wave structure 1242 along the length of the electrode 1
Degree direction is in line, and first wave structure 1211 rides out in the opposite direction with the third wave structure 1241, institute
It states the second wave structure 1212 to ride out in the opposite direction with the 4th wave structure 1242, so that electrode 1 was subject to
Extraneous stress is more evenly distributed, and further decreases the extraneous stress that electrode 1 is subject to, make the welding surface of the pedestal 13 of electrode 1 by
Extraneous stress it is smaller, to improve the soldering reliability of the welding surface of the pedestal 13 of electrode 1, extend the service life of electrode 1.
For the first buffer cell 121 and the second buffer cell 124 quantity with no restriction, when the first buffer cell 121
When equal with the quantity of the second buffer cell 124, the first buffer cell 121 and the second buffer cell 124 interval are arranged；When
When the quantity of first buffer cell 121 and the second buffer cell 124 is unequal, the first buffer cell 121 and the second buffer cell
124 arrangement position can be arranged according to actual needs.
5th embodiment
In the 5th embodiment, a kind of power semiconductor modular, including electrode 1 described in embodiment as above.Above-mentioned electrode 1
It can be reduced the extraneous stress that electrode 1 is subject in itself, meanwhile, the extraneous stress for being subject to electrode 1 is evenly distributed on electrode 1, is made
The welding surface fixation of electrode 1 is more firm, increases the service life of electrode 1, to make the installation reliability of power semiconductor modular
It is promoted, the reliability level that product uses is promoted, and increases the service life of power semiconductor modular.
Sixth embodiment
As described in Figure 9, in the sixth embodiment, a kind of power semiconductor modular, including substrate (not marked in figure), sealing
Electrode 1 described in glue 5, encapsulating housing 6 and embodiment as above, the encapsulating housing 6 are provide on the substrate to form cavity
7, the sealant 5 is filled in the cavity 7 and the cladding substrate, and the upper surface of the sealant 5 is in close to described
The lower section of first buffer cell 121 of pedestal 13, the roof of the encapsulating housing 6 are provided with perforation (not shown),
The pedestal 13 of the electrode 1 is fixed on the substrate, and the electrode 1 passes through the perforation, 11 grafting of head of the electrode 1
On external pcb board 8.
The pedestal 13 of the electrode 1 of the power semiconductor modular is fixed on substrate, and substrate has insulation, heat dissipation and support
Effect.Encapsulating housing 6 is located on substrate to form cavity 7, and sealant 5 is filled in cavity 7 to and is coated substrate, makes electrode
1 pedestal 13 is firm to be connected on substrate, meanwhile, sealant 5 in cavity 7 inside chip and aluminum steel etc. play protection,
The effect of insulation and heat dissipation.The upper surface of sealant 5 is in the lower section of the first buffer cell 121 close to the pedestal 13, protects
Electrode 1 is demonstrate,proved in installation or removal, the extraneous stress that electrode 1 can be made to be subject to by buffer part 12 is evenly distributed, reduction electrode 1 by
The extraneous stress arrived, and then the extraneous stress that the welding surface for reducing the pedestal 13 of electrode 1 is subject to, guarantee the fixing of electrode 1.Head
Portion 11 is located at the top of encapsulating housing 6, and pcb board 8 is fixed on head 11, this connection type of electrode 1 and pcb board 8, can be with
Make the head 11 of multiple electrodes 1 while being pressed into pcb board 8, saves the set-up time of electrode 1.
The substrate includes lower layer's copper sheet 2, ceramic layer 3 and upper layer copper sheet 4, and lower layer's copper sheet 2 is fixedly connected on described
The lower surface of ceramic layer 3, the upper layer copper sheet 4 are fixedly connected on the upper surface of the ceramic layer 3, the pedestal 13 of the electrode 1
It is fixed on the upper layer copper sheet 4, the encapsulating housing 6 is located on the ceramic layer 3 to form cavity 7, the sealant 5
It is filled in the cavity 7 and coats the upper layer copper sheet 4.
Mode on upper layer copper sheet 4 is fixed on no restrictions for the pedestal 13 of electrode 1, for example, the lower surface of pedestal 13
It can be fixed on upper layer copper sheet 4 by way of solder welding or ultrasonic bonding.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (12)
1. a kind of electrode, which is characterized in that including head, buffer part and pedestal, the buffer part is connected to the head and institute
It states between pedestal, the buffer part includes at least one first buffer cell, and first buffer cell includes arranged side by side
The length of first wave structure and the second wave structure, first wave structure and second wave structure along the electrode
Direction extends, and first wave structure rides out in the opposite direction with second wave structure.
2. electrode according to claim 1, which is characterized in that first buffer cell is equipped with first through hole, and described the
One through-hole is between first wave structure and the second wave structure.
3. electrode according to claim 1 or 2, which is characterized in that the buffer part further includes the first connection unit, described
First connection unit is connected to the head and between first buffer cell on the head.
4. electrode according to claim 3, which is characterized in that the buffer part further includes the second connection unit, and described
Two connection units are connected between first buffer cell and the pedestal of the pedestal.
5. electrode according to claim 4, which is characterized in that second connection unit is perpendicular to the flat of the pedestal
Plate.
6. electrode according to claim 4, which is characterized in that second connection unit is fixed on the upper table of the pedestal
The middle position in face；Alternatively,
Second connection unit is fixed on the marginal position of the upper surface of the pedestal.
7. electrode according to claim 3, which is characterized in that the buffer part further includes that at least one second buffering is single
Member, second buffer cell are connected between first connection unit and first buffer cell, second buffering
Unit includes the third wave structure and the 4th wave structure being set side by side, the third wave structure and the 4th wave knot
Structure extends along the length direction of the electrode, and the third wave structure encircles in the opposite direction with the 4th wave structure
Out.
8. electrode according to claim 7, which is characterized in that second buffer cell is equipped with the second through-hole, and described the
Two-way hole is between the third wave structure and the 4th wave structure.
9. electrode according to claim 7, which is characterized in that first wave structure and third wave structure edge
The length direction of the electrode is in line, and second wave structure is with the 4th wave structure along the length of the electrode
Direction is in line, and first wave structure rides out in the opposite direction with the third wave structure, second wave
Structure rides out in the opposite direction with the 4th wave structure.
10. electrode according to claim 3, which is characterized in that formed between first connection unit and the head
Tooth socket.
11. a kind of power semiconductor modular, which is characterized in that including electrode described in claim 1-10 any one.
12. a kind of power semiconductor modular, which is characterized in that appoint including substrate, sealant, encapsulating housing and claim 1-10
Electrode described in meaning one, the encapsulating housing are provide on the substrate to form cavity, and the sealant is filled in described
In the cavity and cladding substrate, the upper surface of the sealant is under first buffer cell of the pedestal
Side, the roof of the encapsulating housing are provided with perforation, and the pedestal of the electrode is fixed on the substrate, and the electrode passes through institute
Perforation is stated, the head of the electrode is plugged on external pcb board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821109654.8U CN208538835U (en) | 2018-07-12 | 2018-07-12 | Electrode and power semiconductor modular |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821109654.8U CN208538835U (en) | 2018-07-12 | 2018-07-12 | Electrode and power semiconductor modular |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208538835U true CN208538835U (en) | 2019-02-22 |
Family
ID=65388950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821109654.8U Active CN208538835U (en) | 2018-07-12 | 2018-07-12 | Electrode and power semiconductor modular |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208538835U (en) |
-
2018
- 2018-07-12 CN CN201821109654.8U patent/CN208538835U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191231 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |