CN208538838U - Electrode and power semiconductor modular - Google Patents
Electrode and power semiconductor modular Download PDFInfo
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- CN208538838U CN208538838U CN201820787214.1U CN201820787214U CN208538838U CN 208538838 U CN208538838 U CN 208538838U CN 201820787214 U CN201820787214 U CN 201820787214U CN 208538838 U CN208538838 U CN 208538838U
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Abstract
The utility model belongs to power electronics field, is related to a kind of electrode and power semiconductor modular.Electrode includes head, buffer part and pedestal, buffer part is connected between head and pedestal, buffer part includes at least one first buffer cell and at least one second buffer cell, first buffer cell is equipped at least one first through hole for running through buffer part, first through hole has the wall surface of closure, second buffer cell is equipped at least one hole slot for running through buffer part, hole slot includes the second through-hole and link slot, link slot is equipped with interior end opening and outer end opening, outer end opening runs through the edge of buffer part, the wall surface of second through-hole is equipped with the notch with the inner end open communication of link slot.The electrode can be such that extraneous stress is evenly distributed in the buffer part of electrode, extraneous stress is significantly reduced by the effect of buffer part, extraneous stress to make the pedestal of electrode be subject to is smaller, alleviates the extraneous stress that the welding surface of the pedestal of electrode is subject to, extends the service life of electrode.
Description
Technical field
The utility model belongs to power electronics field, more particularly to a kind of electrode and power semiconductor modular.
Background technique
With power IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) mould
Application of the block in photovoltaic art, various environmental factors influence the installation reliability of power IGBT module increasing.In light
In volt field, generally welding electrode will be needed to be welded in power IGBT module, in various adverse circumstances, traditional need weld electricity
Pole has been unable to satisfy the requirement of its soldering reliability, more and more power IGBT modules manufacturer start by the way of crimping into
The installation of row power IGBT module.All electrodes can be pressed together using the power IGBT module of the electrode with buffer structure
Enter control circuit board, guarantees to be uniformly distributed the stress that electrode itself is subject to, while making electrode when being pressed into electrode and extracting electrode
The stress that is born of bottom (i.e. welding surface) it is minimum；In vibration environment, the stress that electrode is subject to can be sufficiently discharged, it is ensured that function
Installation effectiveness is improved while the installation reliability of rate IGBT module again and reduces cost of labor.
The existing electrode with buffer structure is usually that the bottom of electrode is struck out S-shaped to carry out the buffering of stress,
Stress concentration distribution in base part S-shaped bending part (electrode under the action of 140N pressure and pulling force, S-shaped bending part by
Maximum pressure be 2800Mpa, electrode occur deformation quantity be more than 1mm), although such electrode structure alleviates the bottom of electrode
The stress in portion, but in the middle section of electrode, stress distribution is concentrated very much, so that electrode is easily deformed, to influence the use of electrode
Service life, so requirement of such electrode to material is very high.
The electrode of above-mentioned form, easily deforms, and in severe vibration environment, easily influences the service life of electrode, gives electrode
Use make troubles, limit the application range of electrode.
Utility model content
The technical problem to be solved by the utility model is to easily deforming to reduce electrode for existing electrode
The technical issues of service life, provides a kind of electrode and power semiconductor modular.
In order to solve the above technical problems, the utility model embodiment provides a kind of electrode, including head, buffer part and bottom
Seat, the buffer part are connected between the head and the pedestal, and the buffer part includes at least one first buffer cell
With at least one the second buffer cell, first buffer cell is equipped at least one first through hole for running through the buffer part,
The first through hole has the wall surface of closure, and second buffer cell is equipped at least one hole slot for running through the buffer part,
The hole slot includes the second through-hole and link slot, and the link slot is equipped with interior end opening and outer end opening, the outer end opening
Through the edge of the buffer part, the wall surface of second through-hole is equipped with scarce with the inner end open communication of the link slot
Mouthful.
According to the electrode of the utility model embodiment, buffer part is set between head and pedestal, buffer part is arranged at least
At least one is arranged through the buffer part in one the first buffer cell and at least one second buffer cell, the first buffer cell
First through hole, at least one hole slot for running through the buffer part is arranged in the second buffer cell, and this electrode can guarantee that electrode exists
When by extraneous stress, stress is evenly distributed in by buffer part by the elastic deformation of the miniature deformation and hole slot of first through hole
On, the extraneous stress that electrode is subject to is greatly lowered.Moreover, the outer end opening that hole slot is equipped with passes through because buffer part is provided with hole slot
The edge for wearing the buffer part, stretching the electrode can also compress, and when electrode is by extraneous stress, hole slot has limit
Bit function limits the largest deformation amount of electrode.
Meanwhile extraneous stress is significantly reduced by the effect of buffer part, so that the pedestal of electrode be made to be subject to
Extraneous stress is smaller, alleviates the extraneous stress that the welding surface of the pedestal of electrode is subject to, and avoids the welding emaciated face of the pedestal of electrode
Failure is fallen, the service life of electrode is caused to reduce.In addition, the electrode, compared with existing electrode, the external world which is subject to is answered
Power is greatly lowered, even if also can guarantee the intensity of electrode in rugged environment, is allowed to be not easily broken and deform, increase
The service life of electrode.
Optionally, at least one described first buffer cell is equipped with multiple first through hole of array arrangement.
Optionally, the buffer part includes first side, second side, third side and the 4th side, first side
Face is oppositely arranged with second side, and the third side is connected to one end of the first side and one end of the second side
Between, the 4th side is connected between the other end of the first side and the other end of the second side, and described
One through-hole runs through the first side and second side, and the hole slot runs through the first side and second side, the outer end
Opening is located on the third side or the 4th side.
Optionally, second buffer cell is equipped with multiple hole slots through the buffer part, multiple hole slot dislocation
The opposite sides of the buffer part is set.
Optionally, second through-hole is ellipse hole, and the link slot is parallel with the pedestal.
Optionally, the first through hole is diamond shape through-hole.
Optionally, the third side is serrated face, and the 4th side is serrated face, and adjacent first buffering is single
The first tooth socket is formed between member.
Optionally, the second tooth socket is formed between the head and first buffer cell or second buffer cell.
Optionally, the buffer part further includes the first connection unit, first connection unit be connected to the pedestal with
Between first buffer cell or second buffer cell of the pedestal.
Optionally, first connection unit is the plate perpendicular to the pedestal；Alternatively,
First connection unit is the bending plate at least one bending.
Optionally, the buffer part further includes the second connection unit, second connection unit be connected to the head with
Between first buffer cell or second buffer cell on the head.
Optionally, the third side is serrated face, and the 4th side is serrated face, and the head and described second connect
Form third tooth socket between order member, second connection unit and first buffer cell or second buffer cell it
Between formed the 4th tooth socket.
On the other hand, the utility model embodiment provides a kind of power semiconductor modular, including electrode as described above.
According to the power semiconductor modular of the utility model embodiment, electrode can be reduced the external world that electrode itself is subject to and answer
Power, meanwhile, the extraneous stress for being subject to electrode is uniformly distributed makes the welding surface fixation of electrode more firm on the electrode, increases electricity
The service life of pole, so that the installation reliability of power semiconductor modular be made to be promoted, the reliability level that product uses is promoted, and is increased
Add the service life of power semiconductor modular.
In another aspect, the utility model embodiment provides a kind of power semiconductor modular, including substrate, sealant, encapsulation
Shell and electrode as described above, the encapsulating housing are provide on the substrate to form cavity, and the sealant is filled in
In the cavity and cladding substrate, the upper surface of the sealant is in first buffer cell close to the pedestal
Lower section, the roof of the encapsulating housing is provided with perforation, and the pedestal of the electrode is fixed on the substrate, and the electrode is worn
The perforation is crossed, the head of the electrode is plugged on external pcb board.
According to the power semiconductor modular of the utility model embodiment, the pedestal of electrode is fixed on substrate, and substrate has
The effect of insulation, heat dissipation and support.Encapsulating housing is located to form cavity on substrate, and sealant is filled in cavity and is wrapped
Cover substrate, make the pedestal of electrode is firm to be connected on substrate, meanwhile, sealant in cavity inside chip and aluminum steel etc. rise
To the effect of protection, insulation and heat dissipation.The upper surface of sealant is in the lower section of the first buffer cell close to the pedestal, protects
Electrode is demonstrate,proved in installation or removal, the extraneous stress that electrode can be made to be subject to by buffer part is evenly distributed, and reduces what electrode was subject to
Extraneous stress, and then the extraneous stress that the welding surface for reducing the pedestal of electrode is subject to, guarantee the fixing of electrode.Head is located at envelope
The top of shell is filled, pcb board is fixed on head, and this connection type of electrode and pcb board can make the head of multiple electrodes
It is pressed into pcb board simultaneously, saves the set-up time of electrode.
Detailed description of the invention
Fig. 1 is the schematic diagram for the electrode that the utility model first embodiment provides；
Fig. 2 is another schematic diagram for the electrode that the utility model first embodiment provides；
Fig. 3 is the schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 4 is the partial enlargement diagram in Fig. 3 at A；
Fig. 5 is another schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 6 is another schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 7 is another schematic diagram for the electrode that the utility model second embodiment provides；
Fig. 8 is the schematic diagram for the electrode that the utility model 3rd embodiment provides；
Fig. 9 is the schematic diagram for the power semiconductor modular that an embodiment of the present invention provides.
Appended drawing reference in specification is as follows:
1, electrode；11, head；12, buffer part；121, the first buffer cell；12101, first through hole；122, second is slow
Rush unit；1221, hole slot；12211, link slot；122111, outer end opening；122112, interior end opening；12212, the second through-hole；
122121, notch；123, first side；124, second side；125, third side；126, the 4th side；127, the first connection
Unit；1271, bending plate；128, the second connection unit；129, the first tooth socket；1210, the second tooth socket；1211, third tooth socket；
1212, the 4th tooth socket；13, pedestal；
2, lower layer's copper sheet；3, ceramic layer；4, upper layer copper sheet；5, sealant；6, encapsulating housing；7, cavity；8, pcb board.
Specific embodiment
The technical issues of in order to keep the utility model solved, technical solution and beneficial effect are more clearly understood, below
In conjunction with accompanying drawings and embodiments, the utility model is described in further detail.It should be appreciated that specific reality described herein
It applies example to be only used to explain the utility model, is not used to limit the utility model.
As shown in Figures 1 to 9, electrode 1 provided by the embodiment of the utility model, including head 11, buffer part 12 and pedestal
13, the buffer part 12 is connected between the head 11 and the pedestal 13, the buffer part 12 include at least one first
Buffer cell 121 and at least one second buffer cell 122, first buffer cell 121 are equipped at least one through described
The first through hole 12101 of buffer part 12, the first through hole 12101 have the wall surface of closure, and second buffer cell 122 is set
There is at least one to run through the hole slot 1221 of the buffer part 12, the hole slot 1221 includes the second through-hole 12212 and link slot
12211, the link slot 12211 is equipped with interior end opening 122112 and outer end opening 122111, the outer end opening 122111
Through the edge of the buffer part 12, the wall surface of second through-hole 12212 is equipped with to be opened with the inner end of the link slot 12211
The notches 122121 of 122112 connection of mouth.That is, the wall surface of the first through hole 12101 has the figure of closure, that is, first through hole
12101 wall surface is continuous (being not provided with notch).The outer end opening 122111 of link slot 12211 exposes to the side of buffer part 12
Edge.
Buffer part 12 is arranged in the electrode 1 between head 11 and pedestal 13, at least one first buffering is arranged in buffer part 12
Unit 121 and at least one second buffer cell 122, the first buffer cell 121 are arranged at least one and run through the buffer part 12
First through hole 12101, the second buffer cell 122 setting at least one run through the buffer part 12 hole slot 1221, this electricity
Pole 1 can guarantee that electrode 1 when by extraneous stress, passes through the miniature deformation of first through hole 12101 and the elastic shape of hole slot 1221
Stress is evenly distributed in buffer part 12 by change, and the extraneous stress that electrode 1 is subject to is greatly lowered.Moreover, because of buffer part 12
It is provided with hole slot 1221, the outer end opening 122111 that hole slot 1221 is equipped with runs through the edge of the buffer part 12, makes the electrode 1 can
It can also be compressed with stretching, when electrode 1 is by extraneous stress, hole slot 1221 has limit function, limits the maximum of electrode 1
Deformation quantity.
Meanwhile extraneous stress is significantly reduced by the effect of buffer part 12, thus make the pedestal 13 of electrode 1 by
The extraneous stress arrived is smaller, alleviates the extraneous stress that the welding surface of the pedestal 13 of electrode 1 is subject to, avoids the pedestal 13 of electrode 1
Welding surface fall off failure, cause the service life of electrode 1 to reduce.In addition, the electrode 1 is compared with existing electrode, the electrode 1
The extraneous stress being subject to is greatly lowered, even if also can guarantee the intensity of electrode 1 in rugged environment, is allowed to be not easily broken
And deformation, increase the service life of electrode 1.As shown in Fig. 1, Fig. 3, Fig. 6 and Fig. 8, the first through hole 12101 is diamond shape
Through-hole.Using diamond shape through-hole structure, when electrode 1 is by extraneous stress, small amount of compression occurs for the two sides triangle of diamond shape, and
Two sides are due to the symmetrical structure of its triangle, and the effect amount squeezed is equal, so that stress is evenly distributed on the triangle of two sides.Together
When the structure of diamond shape increases, the triangular portions amount of being squeezed of multiple diamond shape two sides is also consistent equal, so that each triangle
The stress distribution at position it is smaller also more uniformly.
As shown in Fig. 1 to Fig. 3 and Fig. 5 to Fig. 8, the buffer part 12 includes first side 123, second side 124, third
Side 125 and the 4th side 126, the first side 123 are oppositely arranged with second side 124, and the third side 125 connects
Between one end of the first side 123 and one end of the second side 124, the 4th side 126 is connected to described
Between the other end of first side 123 and the other end of the second side 124, the first through hole 12101 is through described the
One side 123 and second side 124, the hole slot 1221 run through the first side 123 and second side 124, the outer end
Opening 122111 is located on the third side 125 or the 4th side 126.
As shown in Fig. 1, Fig. 3, Fig. 4, Fig. 6 and Fig. 8, second buffer cell 122 is equipped with multiple through the buffer part
12 hole slot 1221, multiple hole slots 1221 shift to install the opposite sides in the buffer part 12.Multiple hole slots 1221 are wrong
The opposite sides of the buffer part 12 is arranged in position, so that extraneous stress being distributed on electrode 1 more evenly, can further decrease
The stress that electrode 1 is subject to.Preferably, the hole slot 1221 is even number, and hole slot 1221 is shifted to install in the opposite of buffer part 12
Two sides, meanwhile, hole slot 1221 is symmetricly set on the opposite sides of buffer part 12, can make the distribution of extraneous stress more evenly in this way
On electrode 1, the stress that electrode 1 is subject to can be further decreased.
As shown in Fig. 1, Fig. 3, Fig. 4, Fig. 6 and Fig. 8, second through-hole 12212 is ellipse hole, the link slot
12211 is parallel with the pedestal 13.Link slot 12211 is parallel with pedestal 13, facilitates 1 stress of electrode more evenly.
With no restriction for the specific location between the first buffer cell 121 and the second buffer cell 122.It can be such as Fig. 1
Shown, the first buffer cell 121 is located between head 11 and the second buffer cell 122.Alternatively, the second buffer cell 122 is located at
Between head 11 and the first buffer cell 121.Alternatively, the first buffer cell 121 is staggered with the second buffer cell 122.Or
Person, for the second buffer cell 122 between head 11 and pedestal 13, the first buffer cell 121 is located at the second buffer cell 122
Between multiple hole slots 1221.
As shown in Fig. 1 to Fig. 3 and Fig. 5 to Fig. 8, the buffer part 12 further includes the first connection unit 127, and described first connects
Order member 127 is connected to the pedestal 13 and first buffer cell 121 or second buffering close to the pedestal 13
Between unit 122.
As shown in Fig. 1 to Fig. 3 and Fig. 5 to Fig. 8, first connection unit 127 is the plate perpendicular to the pedestal 13
(not shown).First connection unit 127 or the bending plate 1271 at least one bending.Bending plate
1271 can further alleviate the extraneous stress that electrode 1 is subject to, and the extraneous stress for being subject to the welding surface of pedestal 13 further subtracts
It is small.Simultaneously as buffer part 12 has born most extraneous stress, the extraneous stress for being subject to bending plate 1271 is reduced very
More, when electrode 1 is by extraneous stress, bending plate 1271 will not deformation occurs, further increases the service life of electrode 1.
Angle between the top of bending plate 1271 and the buffer part 12 is obtuse angle, between the lower part and pedestal 13 of bending plate 1271
Angle be acute angle.
As shown in Fig. 1 to Fig. 3 and Fig. 5 to Fig. 8, the bending plate 1271 is fixed on the side of the upper surface of the pedestal 13
Edge can balance the stress of bending plate 1271 in this way, keep fixation between bending plate 1271 and pedestal 13 more firm.
The quantity for the bending that first connection unit 127 has with no restrictions, can increase bending according to actual needs.
First embodiment
As shown in Figures 1 and 2, in the first embodiment, first buffer cell 121 is multiple, the third side
125 be serrated face, and the 4th side 126 is serrated face, forms the first tooth socket between adjacent first buffer cell 121
129.The second tooth socket 1210 is formed between the head 11 and first buffer cell 121 or second buffer cell 122.
Serrated face, the first tooth socket 129 and the second tooth socket 1210 make electrode 1 be more evenly distributed under the action of extraneous stress, reduce electrode
1 stress.
Second embodiment
The difference of second embodiment and first embodiment is as described below:
As shown in Fig. 3 and Fig. 5 to Fig. 7, in a second embodiment, first buffer cell 121 is at least one.It is described
Buffer part 12 further includes the second connection unit 128, and second connection unit 128 is connected to the head 11 and the close head
Between first buffer cell 121 or second buffer cell 122 in portion 11.The head 11 connect single with described second
Third tooth socket 1211, second connection unit 128 and first buffer cell 121 or described second are formed between member 128
The 4th tooth socket 1212 is formed between buffer cell 122.Third tooth socket 1211 and the 4th tooth socket 1212 make electrode 1 in extraneous stress
It is more evenly distributed under effect, reduces the stress of electrode 1.
As shown in FIG. 6 and 7, the setting of the first buffer cell 121 is slow in second connection unit 128 and second
It rushes between unit 122, forms tooth socket between first buffer cell 121 and second connection unit 128 and (do not marked in figure
Out).The tooth socket facilitates extraneous stress being distributed on electrode 1 more evenly, reduces the stress of electrode 1.
3rd embodiment
The difference of 3rd embodiment and second embodiment is as described below:
As shown in figure 8, in the third embodiment, at least one described first buffer cell 121 is equipped with the more of array arrangement
A first through hole 12101.For example, the quantity of the first through hole 12101 can be 2,3 or 4, it can basis
Actual needs increases.The first through hole 12101 of array arrangement can make extraneous stress being distributed on electrode 1 more evenly, meanwhile, subtract
The extraneous stress that small electrode 1 is subject to increases the fixing of the welding surface of pedestal 13.
When buffer part 12 includes multiple first buffer cells 121, first through hole that each first buffer cell 121 is equipped with
12101 quantity can be identical or not identical, can increase or decrease according to actual needs.
Fourth embodiment
As described in Figure 9, in the fourth embodiment, a kind of power semiconductor modular is provided, including described in embodiment as above
Electrode 1.Above-mentioned electrode 1 can be reduced the extraneous stress that electrode 1 is subject in itself, meanwhile, the extraneous stress for being subject to electrode 1 is uniform
It is distributed on electrode 1, keeps the welding surface fixation of electrode 1 more firm, increase the service life of electrode 1, to make power semiconductor
The installation reliability of module is promoted, and the reliability level that product uses is promoted, and increases the service life of power semiconductor modular.
5th embodiment
As described in Figure 9, in the 5th embodiment, a kind of power semiconductor modular is provided, including substrate (not marked in figure),
Electrode 1 described in sealant 5, encapsulating housing 6 and embodiment as above, the encapsulating housing 6 are provide on the substrate to be formed
Cavity 7, the sealant 5 is filled in the cavity 7 and the cladding substrate, and the upper surface of the sealant 5 is in close
The lower section of first buffer cell 121 of the pedestal 13, the roof of the encapsulating housing 6 are provided with perforation, the electrode 1
Pedestal 13 it is fixed on the substrate, the electrode 1 passes through the perforation, and the head 11 of the electrode 1 is plugged on external
On pcb board 8.
The pedestal 13 of the electrode 1 of the power semiconductor modular is fixed on substrate, and substrate has insulation, heat dissipation and support
Effect.Encapsulating housing 6 is located on substrate to form cavity 7, and sealant 5 is filled in cavity 7 to and is coated substrate, makes electricity
The pedestal 13 of pole 1 is firm to be connected on substrate, meanwhile, sealant 5 in cavity 7 inside chip and aluminum steel etc. play guarantor
The effect of shield, insulation and heat dissipation.The upper surface of sealant 5 is in the lower section of the first buffer cell 121 close to the pedestal 13,
Guarantee electrode 1 in installation or removal, the extraneous stress that electrode 1 can be made to be subject to by buffer part 12 is evenly distributed, and reduces electrode 1
The extraneous stress being subject to, and then the extraneous stress that the welding surface for reducing the pedestal 13 of electrode 1 is subject to, guarantee the fixing of electrode 1.
Head 11 is located at the top of encapsulating housing 6, and pcb board 8 is fixed on head 11, this connection type of electrode 1 and pcb board 8,
It can make the head 11 of multiple electrodes 1 while be pressed into pcb board 8, save the set-up time of electrode 1.
The substrate includes lower layer's copper sheet 2, ceramic layer 3 and upper layer copper sheet 4, and lower layer's copper sheet 2 is fixedly connected on described
The lower surface of ceramic layer 3, the upper layer copper sheet 4 are fixedly connected on the upper surface of the ceramic layer 3, the pedestal 13 of the electrode 1
It is fixed on the upper layer copper sheet 4, the encapsulating housing 6 is located on the ceramic layer 3 to form cavity 7, the sealant 5
It is filled in the cavity 7 and coats the upper layer copper sheet 4.
Mode on upper layer copper sheet 4 is fixed on no restriction for the pedestal 13 of electrode 1, for example, the lower surface of pedestal 13
It can be fixed on upper layer copper sheet 4 by way of solder welding or ultrasonic bonding.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (14)
1. a kind of electrode, which is characterized in that including head, buffer part and pedestal, the buffer part is connected to the head and institute
It states between pedestal, the buffer part includes at least one first buffer cell and at least one second buffer cell, and described first
Buffer cell is equipped at least one first through hole for running through the buffer part, and the first through hole has the wall surface of closure, described
Second buffer cell is equipped at least one hole slot for running through the buffer part, and the hole slot includes the second through-hole and link slot, institute
Link slot is stated equipped with interior end opening and outer end opening, the outer end opening runs through the edge of the buffer part, and described second is logical
The wall surface in hole is equipped with the notch with the inner end open communication of the link slot.
2. electrode according to claim 1, which is characterized in that at least one described first buffer cell is equipped with array arrangement
Multiple first through hole.
3. electrode according to claim 1, which is characterized in that the buffer part includes first side, second side, third
Side and the 4th side, the first side are oppositely arranged with second side, and the third side is connected to the first side
One end and the second side one end between, the 4th side is connected to the other end and described the of the first side
Between the other end of two side faces, the first through hole runs through the first side and second side, and the hole slot is through described the
One side and second side, the outer end opening are located on the third side or the 4th side.
4. electrode according to claim 1, which is characterized in that second buffer cell is equipped with multiple through the buffering
The hole slot in portion, multiple hole slots shift to install the opposite sides in the buffer part.
5. electrode according to claim 1, which is characterized in that second through-hole is ellipse hole, the link slot
It is parallel with the pedestal.
6. electrode described in -5 any one according to claim 1, which is characterized in that the first through hole is diamond shape through-hole.
7. electrode according to claim 3, which is characterized in that the third side is serrated face, and the 4th side is
Serrated face forms the first tooth socket between adjacent first buffer cell.
8. electrode according to claim 7, which is characterized in that the head and first buffer cell or described second
The second tooth socket is formed between buffer cell.
9. electrode according to claim 1, which is characterized in that the buffer part further includes the first connection unit, and described
One connection unit be connected to the pedestal and close to the pedestal first buffer cell or second buffer cell it
Between.
10. electrode according to claim 9, which is characterized in that first connection unit is perpendicular to the pedestal
Plate；Alternatively,
First connection unit is the bending plate at least one bending.
11. according to claim 1, electrode described in 7,9 or 10, which is characterized in that the buffer part further includes the second connection list
Member, second connection unit are connected to the head and delay close to first buffer cell on the head or described second
It rushes between unit.
12. electrode according to claim 11, which is characterized in that formed between the head and second connection unit
Third tooth socket forms the 4th tooth between second connection unit and first buffer cell or second buffer cell
Slot.
13. a kind of power semiconductor modular, which is characterized in that including electrode described in claim 1-12 any one.
14. a kind of power semiconductor modular, which is characterized in that appoint including substrate, sealant, encapsulating housing and claim 1-12
Electrode described in meaning one, the encapsulating housing are provide on the substrate to form cavity, and the sealant is filled in described
In the cavity and cladding substrate, the upper surface of the sealant is under first buffer cell of the pedestal
Side, the roof of the encapsulating housing are provided with perforation, and the pedestal of the electrode is fixed on the substrate, and the electrode passes through institute
Perforation is stated, the head of the electrode is plugged on external pcb board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820787214.1U CN208538838U (en) | 2018-05-24 | 2018-05-24 | Electrode and power semiconductor modular |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820787214.1U CN208538838U (en) | 2018-05-24 | 2018-05-24 | Electrode and power semiconductor modular |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208538838U true CN208538838U (en) | 2019-02-22 |
Family
ID=65393544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820787214.1U Active CN208538838U (en) | 2018-05-24 | 2018-05-24 | Electrode and power semiconductor modular |
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| Country | Link |
|---|---|
| CN (1) | CN208538838U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509407A (en) * | 2020-04-10 | 2020-08-07 | 湖南国芯半导体科技有限公司 | Power module terminal |
-
2018
- 2018-05-24 CN CN201820787214.1U patent/CN208538838U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509407A (en) * | 2020-04-10 | 2020-08-07 | 湖南国芯半导体科技有限公司 | Power module terminal |
| CN111509407B (en) * | 2020-04-10 | 2021-06-18 | 湖南国芯半导体科技有限公司 | Power module terminal |
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