CN208208746U - A kind of cpu chip with graphene cooling mechanism - Google Patents
A kind of cpu chip with graphene cooling mechanism Download PDFInfo
- Publication number
- CN208208746U CN208208746U CN201820448927.5U CN201820448927U CN208208746U CN 208208746 U CN208208746 U CN 208208746U CN 201820448927 U CN201820448927 U CN 201820448927U CN 208208746 U CN208208746 U CN 208208746U
- Authority
- CN
- China
- Prior art keywords
- heat
- heat sink
- fixed
- graphene
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model proposes a kind of cpu chips with graphene cooling mechanism, from bottom to top successively include chip, heat-radiating substrate, graphene cooling mechanism and fan；Graphene cooling mechanism includes fixed support plate, the first heat dissipation support component and the second heat dissipation support component；Fixed support plate includes that four the first vertical gripper shoes and a first level support plate, fan are fixed on the top of first level support plate；The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support components are located at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the outside of the four the first heat dissipation support components, stability is good, perfect heat-dissipating improves service life.
Description
Technical field
The utility model relates to a kind of cpu chips, and in particular to a kind of cpu chip with graphene cooling mechanism.
Background technique
The cpu chip of computer can give off heat in use, it is ensured that CPU work normally, just must in time by
Its heat generated distributes.Otherwise, under conditions of heat dispersal situations are insufficient, CPU element function will be remarkably decreased, cannot
Steady operation and influence reliability of operation, or even cause CPU internal circuit damage.In order to guarantee chip work normally it is necessary to
Scientific, reasonable, efficient cooling measure is used to chip.Therefore, the heat dissipation technology of chip increasingly receives significant attention.
The radiating mode of cpu chip includes wind-cooling heat dissipating, water-cooling, semiconductor heat-dissipating, heat pipe heat radiation technology, wherein most
For widely used or use forced air cooling mode, that is, the effect of fan is utilized, the heat of cooling fin is passed through into forced convertion
Mode is dispersed into the environment of surrounding, plays the role of radiating and cooling.Technology air-cooled for forced convertion, efficient radiator are cores
The important component of piece heat dissipation, in order to meet the needs of high efficiency and heat radiation ability, people one after another improve radiator, such as to scattered
Hot-air fan improves, and changes the shape of cooling fin and increases its specific surface area, replacement material category etc..
Since graphene in 2004 is found, unique structure and excellent performance also cause the extensive of researcher
Concern, excellent conductivity, thermal conductivity, high-specific surface area and mechanical property make graphene possess huge application potential,
The thermal coefficient of graphene is up to 5300W/m.k, the diamond best much higher than current thermal conductivity.Comprehensively consider effective now
It is reasonably applied in the heat dissipation of CPU by heat dissipation technology, is a kind of development trend of CPU heat dissipation technology.
Utility model content
The utility model proposes a kind of cpu chip with graphene cooling mechanism regarding to the issue above, and stability is good,
Perfect heat-dissipating improves service life.
Specific technical solution is as follows:
A kind of cpu chip with graphene cooling mechanism successively includes chip, heat-radiating substrate, graphene from bottom to top
Cooling mechanism and fan；
Graphene cooling mechanism includes fixed support plate, the first heat dissipation support component and the second heat dissipation support component；
Fixed support plate includes four the first vertical gripper shoes and a first level support plate, four first vertical supports
The bottom of plate is fixed on heat-radiating substrate and around the frame structure that end face is square is formed, and first level support plate is fixed
At the top of the first vertical gripper shoe, fan is fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support components
It is located at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation supports
The outside of component；
First heat dissipation support component includes the first pressure block, the second pressure block, the first heat sink and the second heat sink；First
The cross sectional shape of pressure block is up-small and down-big isosceles trapezoidal structure, and the second pressure block is up big and down small isosceles trapezoidal structure,
The quantity of second pressure block is two, and two the second pressure blocks are weldingly fixed on the bottom of fan, two the first heat sink difference
It is fixed on the bottom of two the second pressure blocks, the bottom of two the first heat sinks is bonded to each other fixed and vertical dissipates with second
It is fixedly connected at the top of hot plate, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is equipped with first
Locating convex block, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block, the 4th pressure block, third heat sink and the 4th heat sink；Third
The cross sectional shape of pressure block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles trapezoidal structure,
The quantity of third pressure block is two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two third heat sinks
It is separately fixed at the top of two third pressure blocks, is bonded to each other at the top of two third heat sinks fixed and vertical with the
It is fixedly connected at the top of four heat sinks, the 4th pressure block is fixed on the top of the 4th heat sink, and the top of the 4th pressure block is equipped with
Second locating convex block, the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
If vertical on the third heat sink of the second heat dissipation support component side adjacent with the first heat dissipation support component be equipped with
Dry 5th heat sink, the 5th heat sink one end are weldingly fixed on third heat sink, the first heat dissipation of the other end and adjacent side
Plate is in contact；Second heat dissipation support component on the third heat sink far from the first heat dissipation support component side it is vertical be equipped with it is several
6th heat sink, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink are equal
Including metal framework and the graphene composite film piece being arranged in metal framework.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein the first pressure block, the second pressure block, third are held
The cushion chamber that section is isosceles trapezoidal structure is equipped in briquetting and the 4th pressure block.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein the preparation method of graphene composite film piece is such as
Under:
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 50-80min is then allowed to stand 20-
25min obtains suspension；Wherein, solvent is by mass percentage by polyethyleneimine 1.3-2.8%, polyaniline 0.05-
0.8% and water surplus mix；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 5-15min, obtains mono-layer graphite
Alkene film；
(3) in single layer graphene film spray one layer of copper powder layer, copper powder layer with a thickness of 0.01-0.05mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) repetition step (2), step (3) and step (4) 3-5 times；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body suppresses 15-30min under the pressure of 50-200N and obtains high-electroconductivity graphene film；Wherein, mixed gas is nitrogen and one
Carbonoxide is mixed by the volume ratio of 8:1.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein heat-radiating substrate successively includes conduction from top to bottom
Layer, insulating layer and graphene heat-conducting layer；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, lower fixing groove
Top be uniformly provided with several first raised lines, the cross sectional shape of the first raised line is triangular structure of right angle, and graphene heat-conducting layer is solid
It is scheduled in lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering, conductive layer is equipped with corresponding with the chamfering of insulating layer
Second raised line, vertical on the second raised line to be equipped with grafting item, grafting item includes fixed part and plug division, the fixation of string configuration
Portion is fixed on the second raised line, and section is that the plug division of arc-shaped structure is fixed on fixed part, the plug-type setting of grafting item
In the inserting groove of chamfering.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein the upper surface of the insulating layer is equipped with support
The cross sectional shape of block, supporting block is rectangle structure, and the bottom of supporting block is recessed inwardly to form support slot, the section shape of support slot
Shape is obtuse triangle structure, and the apex angle a of support slot is 160 °.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein the height of first raised line is h1, lower solid
The depth for determining slot is h2, h2=2*h1.
Above-mentioned a kind of cpu chip with graphene cooling mechanism, wherein the insulating layer is poured by material of epoxy resin
Infuse, on the outer surface of insulating layer coat one layer of graphene coating, the graphene coating the preparation method is as follows:
(1) graphene slurry is prepared:
1. weighing bilayer graphene 0.3-4%, graphene oxide 0.45-6%, acrylic resin by mass percentage
0.05-0.5%, 1,3- diisopropylcarbodiimide 0.5-0.8%, nitric acid solution 35-48% and ethanol solution surplus, wherein
The mass ratio of bilayer graphene and graphene oxide is 1:1.5, and the mass concentration of nitric acid solution is 12-25%, ethanol solution
Mass concentration is 32-38%；
2. by above-mentioned each component 35-40 DEG C at a temperature of be mixed evenly to obtain graphene slurry；
(2) graphene coating is prepared:
1. weighing graphene slurry 5-22%, epoxy resin 3-18%, polyvinylidene fluoride resin by mass percentage
12-35%, cellulose 0.5-3.2%, silica 1-3%, diacetone alcohol 0.03-0.8%, silester 2-2.8% and water
Surplus；
2. by above-mentioned each component 120-160 DEG C at a temperature of obtain graphene coating after mixing；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.3-2mm.
Above-mentioned a kind of graphene heat conductive circuit base board, wherein graphene heat-conducting layer is overlapped by multilayer chip graphene oxide
It suppresses.
The utility model has the following beneficial effects:
Utility model has good stability, and perfect heat-dissipating improves service life.
Detailed description of the invention
Fig. 1 is the utility model section view.
Fig. 2 is the utility model heat-radiating substrate cross-sectional view.
Fig. 3 is the first heat sink of the utility model cross-sectional view.
Specific embodiment
It is clear to be more clear the technical solution of the utility model, the utility model is carried out into one with reference to the accompanying drawing
Step description, the technical characteristic of any pair of technical solutions of the utility model carry out the scheme that equivalencing is obtained with conventional reasoning and fall
Enter scope of protection of the utility model.
Appended drawing reference
Chip 1, heat-radiating substrate 2, fan 3, the heat dissipation heat dissipation support component of support component 5, second of fixed support plate 4, first
6, the first vertical gripper shoe 7, first level support plate 8, the first pressure block 9, the second pressure block 10, the first heat sink 11, second
Heat sink 12, the first locating convex block 13, third pressure block 14, the 4th pressure block 15, third heat sink 16, the 4th heat sink 17,
Second locating convex block 18, the 5th heat sink 19, the 6th heat sink 20, metal framework 21, graphene composite film piece 22, cushion chamber
23, conductive layer 31, insulating layer 32, graphene heat-conducting layer 33, the first raised line 34, chamfering 35, the second raised line 36, grafting item 37, solid
Determine portion 38, plug division 39, supporting block 310, support slot 311.
Embodiment one
As shown in the figure
A kind of cpu chip with graphene cooling mechanism successively includes chip 1, heat-radiating substrate 2, graphite from bottom to top
Alkene cooling mechanism and fan 3；
Graphene cooling mechanism includes the heat dissipation support component 5 of fixed support plate 4, first and the second heat dissipation support component 6；
Fixed support plate includes four the first vertical gripper shoes 7 and a first level support plate 8, four first vertical branch
The bottom of fagging is fixed on heat-radiating substrate and around the frame structure that end face is square is formed, and first level support plate is solid
It is scheduled on the top of the first vertical gripper shoe, fan is fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support components
It is located at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation supports
The outside of component；
First heat dissipation support component includes the first pressure block 9, the second pressure block 10, the first heat sink 11 and the second heat sink
12；The cross sectional shape of first pressure block is up-small and down-big isosceles trapezoidal structure, and the second pressure block is up big and down small isosceles ladder
Shape structure, the quantity of the second pressure block are two, and two the second pressure blocks are weldingly fixed on the bottom of fan, two first heat dissipations
Plate is separately fixed at the bottom of two the second pressure blocks, the bottom of two the first heat sinks be bonded to each other it is fixed and it is vertical with
It is fixedly connected at the top of second heat sink, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is set
There is the first locating convex block 13, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block 14, the 4th pressure block 15, third heat sink 16 and the 4th heat dissipation
Plate 17；The cross sectional shape of third pressure block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles
Trapezium structure, the quantity of third pressure block are two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two the
Three heat sinks are separately fixed at the top of two third pressure blocks, be bonded to each other at the top of two third heat sinks it is fixed and with
The top of 4th heat sink is vertical to be fixedly connected, and the 4th pressure block is fixed on the top of the 4th heat sink, the 4th pressure block
Top is equipped with the second locating convex block 18, and the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
If vertical on the third heat sink of the second heat dissipation support component side adjacent with the first heat dissipation support component be equipped with
Dry 5th heat sink 19, the 5th heat sink one end are weldingly fixed on third heat sink, and the other end is dissipated with the first of adjacent side
Hot plate is in contact；It is equipped with if the second heat dissipation support component is vertical on the third heat sink far from the first heat dissipation support component side
Dry 6th heat sink 20, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink are equal
Including metal framework 21 and the graphene composite film piece 22 being arranged in metal framework.
It is isosceles trapezoid knot that section is equipped in first pressure block, the second pressure block, third pressure block and the 4th pressure block
The cushion chamber 23 of structure.
Graphene composite film piece the preparation method is as follows:
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 60min is then allowed to stand 22min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 1.5%, polyaniline 0.3% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 10min, obtains single-layer graphene
Film；
(3) in single layer graphene film spray one layer of copper powder layer, copper powder layer with a thickness of 0.02mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) repetition step (2), step (3) and step (4) 4 times；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body suppresses 20min under the pressure of 100N and obtains high-electroconductivity graphene film；Wherein, mixed gas is nitrogen and carbon monoxide
It is mixed by the volume ratio of 8:1.
Heat-radiating substrate includes successively from top to bottom conductive layer 31, insulating layer 32 and graphene heat-conducting layer 33, and graphene is thermally conductive
Layer is suppressed by multilayer chip graphene oxide overlapping；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, lower fixing groove
Top be uniformly provided with several first raised lines 34, the cross sectional shape of the first raised line is triangular structure of right angle, graphene heat-conducting layer
It is fixed in lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering 35, conductive layer is equipped with corresponding with the chamfering of insulating layer
The second raised line 36, vertical on the second raised line to be equipped with grafting item 37, grafting item includes fixed part 38 and plug division 39, strip
The fixed part of structure is fixed on the second raised line, and section is that the plug division of arc-shaped structure is fixed on fixed part, and grafting item is inserted
Enter being arranged in the inserting groove of chamfering for formula.
The upper surface of the insulating layer is equipped with supporting block 310, and the cross sectional shape of supporting block is rectangle structure, supporting block
Bottom be recessed inwardly to form support slot 311, the cross sectional shape of support slot is obtuse triangle structure, and the apex angle a of support slot is
160°。
The height of first raised line is h1, and the depth of lower fixing groove is h2, h2=2*h1.
The insulating layer is poured by material of epoxy resin, and one layer of graphene is coated on the outer surface of insulating layer and is applied
Material, the graphene coating the preparation method is as follows:
(1) graphene slurry is prepared:
1. weigh by mass percentage bilayer graphene 1.5%, graphene oxide 2.25%, acrylic resin 0.3%,
1,3- diisopropylcarbodiimide 0.65%, nitric acid solution 38% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio be 1:1.5, the mass concentration of nitric acid solution is 22%, and the mass concentration of ethanol solution is 35%；
2. by above-mentioned each component 35 DEG C at a temperature of be mixed evenly to obtain graphene slurry；
(2) graphene coating is prepared:
1. weigh by mass percentage graphene slurry 18%, epoxy resin 10%, polyvinylidene fluoride resin 23%,
Cellulose 1.6%, silica 2%, diacetone alcohol 0.3%, silester 2.5% and water surplus；
2. by above-mentioned each component 140 DEG C at a temperature of obtain graphene coating after mixing；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.5mm.
Embodiment two
With a kind of cpu chip with graphene cooling mechanism described in embodiment one, the difference is that:
Graphene composite film piece the preparation method is as follows:
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 50min is then allowed to stand 20min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 1.3%, polyaniline 0.8% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 15min, obtains single-layer graphene
Film；
(3) in single layer graphene film spray one layer of copper powder layer, copper powder layer with a thickness of 0.03mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) repetition step (2), step (3) and step (4) 3 times；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body suppresses 25min under the pressure of 50N and obtains high-electroconductivity graphene film；Wherein, mixed gas is that nitrogen and carbon monoxide are pressed
The volume ratio of 8:1 mixes.
The insulating layer is poured by material of epoxy resin, and one layer of graphene is coated on the outer surface of insulating layer and is applied
Material, the graphene coating the preparation method is as follows:
(1) graphene slurry is prepared:
1. weigh by mass percentage bilayer graphene 0.6%, graphene oxide 0.9%, acrylic resin 0.18%,
1,3- diisopropylcarbodiimide 0.5%, nitric acid solution 42% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio is 1:1.5, and the mass concentration of nitric acid solution is 15%, and the mass concentration of ethanol solution is 36%；
2. by above-mentioned each component 35 DEG C at a temperature of be mixed evenly to obtain graphene slurry；
(2) graphene coating is prepared:
1. weigh by mass percentage graphene slurry 9%, epoxy resin 12%, polyvinylidene fluoride resin 28%,
Cellulose 2.6%, silica 1 .5%, diacetone alcohol 0.4%, silester 2.2% and water surplus；
2. by above-mentioned each component 150 DEG C at a temperature of obtain graphene coating after mixing；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.8mm.
Embodiment three
With a kind of cpu chip with graphene cooling mechanism described in embodiment one, the difference is that:
Graphene composite film piece the preparation method is as follows:
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 80min is then allowed to stand 20min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 2.8%, polyaniline 0.2% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 10min, obtains single-layer graphene
Film；
(3) in single layer graphene film spray one layer of copper powder layer, copper powder layer with a thickness of 0.01mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) repetition step (2), step (3) and step (4) 5 times；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body suppresses 20min under the pressure of 80N and obtains high-electroconductivity graphene film；Wherein, mixed gas is that nitrogen and carbon monoxide are pressed
The volume ratio of 8:1 mixes.
The insulating layer is poured by material of epoxy resin, and one layer of graphene is coated on the outer surface of insulating layer and is applied
Material, the graphene coating the preparation method is as follows:
(1) graphene slurry is prepared:
1. weigh by mass percentage bilayer graphene 3.2%, graphene oxide 4.8%, acrylic resin 0.2%,
1,3- diisopropylcarbodiimide 0.55%, nitric acid solution 45% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio be 1:1.5, the mass concentration of nitric acid solution is 20%, and the mass concentration of ethanol solution is 32%；
2. by above-mentioned each component 40 DEG C at a temperature of be mixed evenly to obtain graphene slurry；
(2) graphene coating is prepared:
1. weigh by mass percentage graphene slurry 20%, epoxy resin 15%, polyvinylidene fluoride resin 15%,
Cellulose 3%, silica 1 .2%, diacetone alcohol 0.45%, silester 2.8% and water surplus；
2. by above-mentioned each component 150 DEG C at a temperature of obtain graphene coating after mixing；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 1mm.
Claims (5)
1. a kind of cpu chip with graphene cooling mechanism, it is characterized in that, successively include from bottom to top chip, heat-radiating substrate,
Graphene cooling mechanism and fan；
Graphene cooling mechanism includes fixed support plate, the first heat dissipation support component and the second heat dissipation support component；
Fixed support plate includes four the first vertical gripper shoes and a first level support plate, four the first vertical gripper shoes
Bottom is fixed on heat-radiating substrate and around forming the frame structure that end face is square, and first level support plate is fixed on the
The top of one vertical gripper shoe, fan are fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support component difference
Positioned at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation support components
Outside；
First heat dissipation support component includes the first pressure block, the second pressure block, the first heat sink and the second heat sink；First pressure-bearing
The cross sectional shape of block be up-small and down-big isosceles trapezoidal structure, the second pressure block be up big and down small isosceles trapezoidal structure, second
The quantity of pressure block is two, and two the second pressure blocks are weldingly fixed on the bottom of fan, and two the first heat sinks are fixed respectively
In the bottom of two the second pressure blocks, the bottom of two the first heat sinks is bonded to each other fixed and vertical with the second heat sink
Top be fixedly connected, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is equipped with the first positioning
Convex block, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block, the 4th pressure block, third heat sink and the 4th heat sink；Third pressure-bearing
The cross sectional shape of block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles trapezoidal structure, third
The quantity of pressure block is two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two third heat sink difference
It is fixed on the top of two third pressure blocks, be bonded to each other fixed at the top of two third heat sinks and vertical is dissipated with the 4th
It is fixedly connected at the top of hot plate, the 4th pressure block is fixed on the top of the 4th heat sink, and the top of the 4th pressure block is equipped with second
Locating convex block, the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
Second heat dissipation support component is vertical equipped with several the on the third heat sink of the first adjacent side of heat dissipation support component
Five heat sinks, the 5th heat sink one end are weldingly fixed on third heat sink, the first heat sink phase of the other end and adjacent side
Contact；Second heat dissipation support component is vertical on the third heat sink far from the first heat dissipation support component side to be equipped with several six
Heat sink, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink include
Metal framework and the graphene composite film piece being arranged in metal framework.
2. a kind of cpu chip with graphene cooling mechanism as described in claim 1, it is characterized in that, the first pressure block, the
The cushion chamber that section is isosceles trapezoidal structure is equipped in two pressure blocks, third pressure block and the 4th pressure block.
3. a kind of cpu chip with graphene cooling mechanism as described in claim 1, it is characterized in that, heat-radiating substrate is from upper
It successively include conductive layer, insulating layer and graphene heat-conducting layer under and；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, the top of lower fixing groove
Portion is uniformly provided with several first raised lines, and the cross sectional shape of the first raised line is triangular structure of right angle, and graphene heat-conducting layer is fixed on
In lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering, conductive layer is equipped with corresponding with the chamfering of insulating layer second
Raised line, vertical on the second raised line to be equipped with grafting item, grafting item includes fixed part and plug division, and the fixed part of string configuration is solid
It is scheduled on the second raised line, section is that the plug division of arc-shaped structure is fixed on fixed part, and the plug-type setting of grafting item is being fallen
In the inserting groove at angle.
4. a kind of cpu chip with graphene cooling mechanism as claimed in claim 3, it is characterized in that, the insulating layer
Upper surface is equipped with supporting block, and the cross sectional shape of supporting block is rectangle structure, and the bottom of supporting block is recessed inwardly to form bearing
Slot, the cross sectional shape of support slot are obtuse triangle structure, and the apex angle a of support slot is 160 °.
5. a kind of cpu chip with graphene cooling mechanism as claimed in claim 3, it is characterized in that, first raised line
Height be h1, the depth of lower fixing groove is h2, h2=2*h1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820448927.5U CN208208746U (en) | 2018-04-02 | 2018-04-02 | A kind of cpu chip with graphene cooling mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820448927.5U CN208208746U (en) | 2018-04-02 | 2018-04-02 | A kind of cpu chip with graphene cooling mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208208746U true CN208208746U (en) | 2018-12-07 |
Family
ID=64525885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820448927.5U Active CN208208746U (en) | 2018-04-02 | 2018-04-02 | A kind of cpu chip with graphene cooling mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208208746U (en) |
-
2018
- 2018-04-02 CN CN201820448927.5U patent/CN208208746U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20060005944A1 (en) | Thermoelectric heat dissipation device and method for fabricating the same | |
| TW200528014A (en) | Variable density graphite foam heat sink | |
| TW201143590A (en) | Heat dissipation device | |
| Zhu et al. | Experimental study of energy saving performances in chip cooling by using heat sink with embedded heat pipe | |
| Nguyen et al. | Use of heat pipe/heat sink for thermal management of high performance CPUs | |
| US7491421B2 (en) | Graphite base for heat sink, method of making graphite base and heat sink | |
| TWM630294U (en) | Heat sink with improved surface structure for liquid immersion cooling heat source | |
| CN208208746U (en) | A kind of cpu chip with graphene cooling mechanism | |
| CN200953344Y (en) | Radiating device | |
| CN203912425U (en) | Thin type heat dissipating sheet and thermoelectricity device thereof | |
| CN201422221Y (en) | Heat dissipating device | |
| CN108461463A (en) | A kind of graphene composite film applied to cpu chip | |
| CN209729888U (en) | High reliablity heat radiation module | |
| CN201623955U (en) | Thinned temperature equalizing plate and heat dissipating module with same | |
| TWM631419U (en) | Liquid immersion radiator | |
| CN205176774U (en) | Take fin of graphite alkene bed course | |
| CN213545202U (en) | Flat heat pipe type CPU heat dissipation device based on thermoelectric refrigeration | |
| KR20220108708A (en) | Thermal conductive structure and electronic device | |
| TWM629670U (en) | Two-phase immersion-cooled fin structure | |
| Liu et al. | Thermal analysis and optimization of light-emitting diodes filament lamp | |
| CN101389201A (en) | Elastic heat conducting and radiating device | |
| CN214627815U (en) | Novel heat dissipation supporting device of power element for controller | |
| CN209640754U (en) | The low profile electronic equipment of active radiator structure and its composition | |
| CN214256941U (en) | Radiator and power supply | |
| CN209447843U (en) | A kind of graphene LED chip heat-radiating substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190819 Address after: 233000 Anhui province Bengbu City Choi Road No. 10 Patentee after: Tao Yong Address before: 212327 Xinxing Street, Huangtang Town, Danyang City, Zhenjiang City, Jiangsu Province Patentee before: Danyang Zhong Gu new material technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191115 Address after: No.101, China (Bengbu) microelectronics technology park, No.10 Caiyuan Road, Bengbu Economic Development Zone, 233000, Anhui Province Patentee after: Anhui carbon China New Material Technology Co., Ltd Address before: 233000 Anhui province Bengbu City Choi Road No. 10 Patentee before: Tao Yong |
|
| TR01 | Transfer of patent right |