CN108461463A - A kind of graphene composite film applied to cpu chip - Google Patents
A kind of graphene composite film applied to cpu chip Download PDFInfo
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- CN108461463A CN108461463A CN201810280896.1A CN201810280896A CN108461463A CN 108461463 A CN108461463 A CN 108461463A CN 201810280896 A CN201810280896 A CN 201810280896A CN 108461463 A CN108461463 A CN 108461463A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract
The present invention proposes a kind of graphene composite film applied to cpu chip, and preparation method is as follows：(1) graphene oxide powder is uniformly mixed in a solvent, 50 80min of ultrasonic disperse is then allowed to stand 20 25min, obtains suspension；(2) use spin-coating method that suspension in substrate, after being then dried in vacuo 5 15min, is obtained single layer graphene film；(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.01 0.05mm；(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；(5) step (2), step (3) and step (4) 35 times are repeated；(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through mixed gas, 15 30min are suppressed under the pressure of 50 200N and obtain high-electroconductivity graphene film.
Description
Technical field
The present invention relates to a kind of graphene composite films, and in particular to a kind of graphene composite film applied to cpu chip.
Background technology
The cpu chip of computer can give off heat in use, it is ensured that CPU work normally, just must in time by
Its heat generated distributes.Otherwise, under conditions of heat dispersal situations are insufficient, CPU element functions will be remarkably decreased, cannot
Steady operation and influence reliability of operation, or even cause CPU internal circuits damage.In order to ensure chip normal work it is necessary to
To chip using science, reasonable, efficient cooling measure.Therefore, the heat dissipation technology of chip increasingly receives significant attention.
The radiating mode of cpu chip includes wind-cooling heat dissipating, water-cooling, semiconductor heat-dissipating, heat pipe heat radiation technology, wherein most
For widely used or use forced air cooling mode, that is, the effect of fan is utilized, the heat of cooling fin is passed through into forced convertion
Mode is dispersed into the environment of surrounding, plays the role of radiating and cooling.For the air-cooled technology of forced convertion, efficient radiator is core
The important component of piece heat dissipation, in order to meet the needs of high efficiency and heat radiation ability, people are one after another improved radiator, such as to dissipating
Hot-air fan is improved, and is changed the shape of cooling fin and is increased its specific surface area, replaces material category etc..
Since graphene in 2004 is found, unique structure and excellent performance also cause the extensive of researcher
Concern, excellent conductivity, thermal conductivity, high-specific surface area and mechanical property make graphene possess huge application potential,
The thermal coefficient of graphene is up to 5300W/m.k, the diamond best far above current thermal conductivity.Consider effective now
It is reasonably applied in the heat dissipation of CPU, is a kind of development trend of CPU heat dissipation technologys by heat dissipation technology.
Invention content
The present invention proposes a kind of graphene composite film applied to cpu chip regarding to the issue above, and stability is good, heat dissipation
Performance is good, improves service life.
Specific technical solution is as follows：
A kind of graphene composite film applied to cpu chip, preparation method are as follows：
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 50-80min is then allowed to stand 20-
25min obtains suspension；Wherein, solvent is by mass percentage by polyethyleneimine 1.3-2.8%, polyaniline 0.05-
0.8% and water surplus mix；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 5-15min, obtains mono-layer graphite
Alkene film；
(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.01-0.05mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) step (2), step (3) and step (4) 3-5 times are repeated；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body, compacting 15-30min obtains high-electroconductivity graphene film under the pressure of 50-200N；Wherein, mixed gas is nitrogen and one
Carbonoxide presses 8:1 volume ratio mixes.
The cpu chip of a kind of above-mentioned graphene composite film applied to cpu chip, application includes core successively from bottom to top
Piece, heat-radiating substrate, graphene cooling mechanism and fan；
Graphene cooling mechanism includes fixed support plate, the first heat dissipation support component and the second heat dissipation support component；
Fixed support plate includes four the first vertical gripper shoes and a first level support plate, four first vertical supports
The bottom of plate is fixed on heat-radiating substrate and around the frame structure that end face is square is formed, first level support plate is fixed
At the top of the first vertical gripper shoe, fan is fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support components
It is located at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation supports
The outside of component；
First heat dissipation support component includes the first pressure block, the second pressure block, the first heat sink and the second heat sink；First
The cross sectional shape of pressure block is up-small and down-big isosceles trapezoidal structure, and the second pressure block is up big and down small isosceles trapezoidal structure,
The quantity of second pressure block is two, and two the second pressure blocks are weldingly fixed on the bottom of fan, two the first heat sink difference
It is fixed on the bottom of two the second pressure blocks, the bottoms of two the first heat sinks is bonded to each other fixed and vertical to be dissipated with second
It is fixedly connected at the top of hot plate, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is equipped with first
Locating convex block, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block, the 4th pressure block, third heat sink and the 4th heat sink；Third
The cross sectional shape of pressure block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles trapezoidal structure,
The quantity of third pressure block is two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two third heat sinks
It is separately fixed at the top of two third pressure blocks, is bonded to each other at the top of two third heat sinks fixed and vertical with the
It is fixedly connected at the top of four heat sinks, the 4th pressure block is fixed on the top of the 4th heat sink, and the top of the 4th pressure block is equipped with
Second locating convex block, the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
If vertical on the third heat sink of the second heat dissipation support component side adjacent with the first heat dissipation support component be equipped with
Dry 5th heat sink, the 5th heat sink one end are weldingly fixed on third heat sink, the first heat dissipation of the other end and adjacent side
Plate is in contact；Second heat dissipation support component on the third heat sink far from the first heat dissipation support component side it is vertical be equipped with it is several
6th heat sink, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink are equal
Including metal framework and the graphene composite film being arranged in metal framework.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein the first pressure block, the second pressure block, third are held
The cushion chamber that section is isosceles trapezoidal structure is equipped in briquetting and the 4th pressure block.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein graphene composite film piece
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein heat-radiating substrate includes conduction successively from top to bottom
Layer, insulating layer and graphene heat-conducting layer；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, lower fixing groove
Top be uniformly provided with several first raised lines, the cross sectional shape of the first raised line is triangular structure of right angle, and graphene heat-conducting layer is solid
It is scheduled in lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering, conductive layer is equipped with corresponding with the chamfering of insulating layer
Second raised line, vertical on the second raised line to be equipped with grafting item, grafting item includes fixed part and plug division, the fixation of string configuration
Portion is fixed on the second raised line, and section is that the plug division of arc-shaped structure is fixed on fixed part, the plug-type setting of grafting item
In the inserting groove of chamfering.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein the upper surface of the insulating layer is equipped with support
The cross sectional shape of block, supporting block is rectangle structure, and the bottom of supporting block is recessed inwardly to form support slot, the section shape of support slot
Shape is obtuse triangle structure, and the apex angle a of support slot is 160 °.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein the height of first raised line is h1, lower solid
The depth for determining slot is h2, h2=2*h1.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein the insulating layer is poured by material of epoxy resin
It notes, a layer graphene coating is coated on the outer surface of insulating layer, the preparation method of the graphene coating is as follows：
(1) graphene slurry is prepared：
1. weighing bilayer graphene 0.3-4%, graphene oxide 0.45-6%, acrylic resin by mass percentage
0.05-0.5%, 1,3- diisopropylcarbodiimide 0.5-0.8%, salpeter solution 35-48% and ethanol solution surplus, wherein
The mass ratio of bilayer graphene and graphene oxide is 1:1.5, the mass concentration of salpeter solution is 12-25%, ethanol solution
Mass concentration is 32-38%；
2. above-mentioned each component is mixed evenly at a temperature of 35-40 DEG C to obtain graphene slurry；
(2) graphene coating is prepared：
1. weighing graphene slurry 5-22%, epoxy resin 3-18%, polyvinylidene fluoride resin by mass percentage
12-35%, cellulose 0.5-3.2%, silica 1-3%, diacetone alcohol 0.03-0.8%, silester 2-2.8% and water
Surplus；
2. above-mentioned each component is obtained graphene coating after mixing at a temperature of 120-160 DEG C；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.3-2mm.
Above-mentioned a kind of graphene composite film applied to cpu chip, wherein graphene heat-conducting layer aoxidizes stone by multilayer chip
Black alkene overlapping is suppressed.
Beneficial effects of the present invention are：
Graphene composite film intensity produced by the present invention is high, perfect heat-dissipating, meanwhile, it applies it on cpu chip, has
There is the characteristics of stability is good, perfect heat-dissipating, improves service life.
Description of the drawings
Fig. 1 is sectional view of the present invention.
Fig. 2 is heat-radiating substrate sectional view of the present invention.
Fig. 3 is the first heat sink sectional view of the invention.
Specific implementation mode
Clear to make technical scheme of the present invention be more clear, the present invention is described further below in conjunction with the accompanying drawings,
Any technical characteristic to technical solution of the present invention carries out the scheme that equivalencing is obtained with conventional reasoning and each falls within guarantor of the present invention
Protect range.
Reference numeral
Chip 1, heat-radiating substrate 2, fan 3, the heat dissipation heat dissipation support component of support component 5, second of fixed support plate 4, first
6, the first vertical gripper shoe 7, first level support plate 8, the first pressure block 9, the second pressure block 10, the first heat sink 11, second
Heat sink 12, the first locating convex block 13, third pressure block 14, the 4th pressure block 15, third heat sink 16, the 4th heat sink 17,
Second locating convex block 18, the 5th heat sink 19, the 6th heat sink 20, metal framework 21, graphene composite film piece 22, cushion chamber
23, conductive layer 31, insulating layer 32, graphene heat-conducting layer 33, the first raised line 34, chamfering 35, the second raised line 36, grafting item 37, solid
Determine portion 38, plug division 39, supporting block 310, support slot 311.
Embodiment one
Applied to the graphene composite film of cpu chip, preparation method is as follows：
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 60min is then allowed to stand 22min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 1.5%, polyaniline 0.3% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 10min, obtains single-layer graphene
Film；
(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.02mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) step (2), step (3) and step (4) 4 times are repeated；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body, compacting 20min obtains high-electroconductivity graphene film under the pressure of 100N；Wherein, mixed gas is nitrogen and carbon monoxide
By 8:1 volume ratio mixes.
As shown, the cpu chip that graphene composite film is applied, include successively from bottom to top chip 1, heat-radiating substrate 2,
Graphene cooling mechanism and fan 3；
Graphene cooling mechanism includes the heat dissipation heat dissipation support component 6 of support component 5 and second of fixed support plate 4, first；
Fixed support plate includes four the first vertical gripper shoes 7 and a first level support plate 8, four first vertical branch
The bottom of fagging is fixed on heat-radiating substrate and around the frame structure that end face is square is formed, first level support plate is solid
It is scheduled on the top of the first vertical gripper shoe, fan is fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support components
It is located at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation supports
The outside of component；
First heat dissipation support component includes the first pressure block 9, the second pressure block 10, the first heat sink 11 and the second heat sink
12；The cross sectional shape of first pressure block is up-small and down-big isosceles trapezoidal structure, and the second pressure block is that up big and down small isosceles are terraced
The quantity of shape structure, the second pressure block is two, and two the second pressure blocks are weldingly fixed on the bottom of fan, two first heat dissipations
Plate is separately fixed at the bottom of two the second pressure blocks, the bottoms of two the first heat sinks be bonded to each other it is fixed and vertical with
It is fixedly connected at the top of second heat sink, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is set
There is the first locating convex block 13, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block 14, the 4th pressure block 15, the heat dissipation of third heat sink 16 and the 4th
Plate 17；The cross sectional shape of third pressure block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles
Trapezium structure, the quantity of third pressure block are two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two the
Three heat sinks are separately fixed at the top of two third pressure blocks, be bonded to each other at the top of two third heat sinks it is fixed and with
The top of 4th heat sink is vertical to be fixedly connected, and the 4th pressure block is fixed on the top of the 4th heat sink, the 4th pressure block
Top is equipped with the second locating convex block 18, and the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
If vertical on the third heat sink of the second heat dissipation support component side adjacent with the first heat dissipation support component be equipped with
Dry 5th heat sink 19, the 5th heat sink one end are weldingly fixed on third heat sink, and the other end is dissipated with the first of adjacent side
Hot plate is in contact；It is equipped with if the second heat dissipation support component is vertical on the third heat sink far from the first heat dissipation support component side
Dry 6th heat sink 20, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink are equal
Including metal framework 21 and the graphene composite film piece 22 being arranged in metal framework.
It is isosceles trapezoid knot that section is equipped in first pressure block, the second pressure block, third pressure block and the 4th pressure block
The cushion chamber 23 of structure.
Heat-radiating substrate includes conductive layer 31, insulating layer 32 and graphene heat-conducting layer 33, graphene heat conduction successively from top to bottom
Layer is suppressed by multilayer chip graphene oxide overlapping；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, lower fixing groove
Top be uniformly provided with several first raised lines 34, the cross sectional shape of the first raised line is triangular structure of right angle, graphene heat-conducting layer
It is fixed in lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering 35, conductive layer is equipped with corresponding with the chamfering of insulating layer
The second raised line 36, vertical on the second raised line to be equipped with grafting item 37, grafting item includes fixed part 38 and plug division 39, strip
The fixed part of structure is fixed on the second raised line, and section is that the plug division of arc-shaped structure is fixed on fixed part, and grafting item is inserted
Enter being arranged in the inserting groove of chamfering for formula.
The upper surface of the insulating layer is equipped with supporting block 310, and the cross sectional shape of supporting block is rectangle structure, supporting block
Bottom be recessed inwardly to form support slot 311, the cross sectional shape of support slot is obtuse triangle structure, and the apex angle a of support slot is
160°。
The height of first raised line is h1, and the depth of lower fixing groove is h2, h2=2*h1.
The insulating layer is poured into a mould by material of epoxy resin, and layer graphene painting is coated on the outer surface of insulating layer
Material, the preparation method of the graphene coating are as follows：
(1) graphene slurry is prepared：
1. weigh by mass percentage bilayer graphene 1.5%, graphene oxide 2.25%, acrylic resin 0.3%,
1,3- diisopropylcarbodiimide 0.65%, salpeter solution 38% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio be 1:1.5, the mass concentration of salpeter solution is 22%, and the mass concentration of ethanol solution is 35%；
2. above-mentioned each component is mixed evenly at a temperature of 35 DEG C to obtain graphene slurry；
(2) graphene coating is prepared：
1. weigh by mass percentage graphene slurry 18%, epoxy resin 10%, polyvinylidene fluoride resin 23%,
Cellulose 1.6%, silica 2%, diacetone alcohol 0.3%, silester 2.5% and water surplus；
2. above-mentioned each component is obtained graphene coating after mixing at a temperature of 140 DEG C；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.5mm.
Embodiment two
With a kind of graphene composite film applied to cpu chip described in embodiment one, the difference is that：
The preparation method of graphene composite film is as follows：
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 50min is then allowed to stand 20min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 1.3%, polyaniline 0.8% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 15min, obtains single-layer graphene
Film；
(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.03mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) step (2), step (3) and step (4) 3 times are repeated；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body, compacting 25min obtains high-electroconductivity graphene film under the pressure of 50N；Wherein, mixed gas is that nitrogen and carbon monoxide are pressed
8:1 volume ratio mixes.
Insulating layer is poured into a mould by material of epoxy resin, and a layer graphene coating, institute are coated on the outer surface of insulating layer
The preparation method for stating graphene coating is as follows：
(1) graphene slurry is prepared：
1. weigh by mass percentage bilayer graphene 0.6%, graphene oxide 0.9%, acrylic resin 0.18%,
1,3- diisopropylcarbodiimide 0.5%, salpeter solution 42% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio is 1:1.5, the mass concentration of salpeter solution is 15%, and the mass concentration of ethanol solution is 36%；
2. above-mentioned each component is mixed evenly at a temperature of 35 DEG C to obtain graphene slurry；
(2) graphene coating is prepared：
1. weigh by mass percentage graphene slurry 9%, epoxy resin 12%, polyvinylidene fluoride resin 28%,
Cellulose 2.6%, silica 1 .5%, diacetone alcohol 0.4%, silester 2.2% and water surplus；
2. above-mentioned each component is obtained graphene coating after mixing at a temperature of 150 DEG C；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.8mm.
Embodiment three
With a kind of graphene composite film applied to cpu chip described in embodiment one, the difference is that：
The preparation method of graphene composite film is as follows：
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 80min is then allowed to stand 20min, obtains
Suspension；Wherein, solvent is mixed by polyethyleneimine 2.8%, polyaniline 0.2% and water surplus by mass percentage；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 10min, obtains single-layer graphene
Film；
(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.01mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) step (2), step (3) and step (4) 5 times are repeated；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through gaseous mixture
Body, compacting 20min obtains high-electroconductivity graphene film under the pressure of 80N；Wherein, mixed gas is that nitrogen and carbon monoxide are pressed
8:1 volume ratio mixes.
The insulating layer is poured into a mould by material of epoxy resin, and layer graphene painting is coated on the outer surface of insulating layer
Material, the preparation method of the graphene coating are as follows：
(1) graphene slurry is prepared：
1. weigh by mass percentage bilayer graphene 3.2%, graphene oxide 4.8%, acrylic resin 0.2%,
1,3- diisopropylcarbodiimide 0.55%, salpeter solution 45% and ethanol solution surplus；Bilayer graphene and graphene oxide
Mass ratio be 1:1.5, the mass concentration of salpeter solution is 20%, and the mass concentration of ethanol solution is 32%；
2. above-mentioned each component is mixed evenly at a temperature of 40 DEG C to obtain graphene slurry；
(2) graphene coating is prepared：
1. weigh by mass percentage graphene slurry 20%, epoxy resin 15%, polyvinylidene fluoride resin 15%,
Cellulose 3%, silica 1 .2%, diacetone alcohol 0.45%, silester 2.8% and water surplus；
2. above-mentioned each component is obtained graphene coating after mixing at a temperature of 150 DEG C；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 1mm.
Claims (8)
1. a kind of graphene composite film applied to cpu chip, it is characterized in that, preparation method is as follows：
(1) graphene oxide powder is uniformly mixed in a solvent, ultrasonic disperse 50-80min is then allowed to stand 20-25min, obtains
To suspension；Wherein, solvent is by mass percentage by more than polyethyleneimine 1.3-2.8%, polyaniline 0.05-0.8% and water
Amount mixes；
(2) it uses spin-coating method by suspension in substrate, after being then dried in vacuo 5-15min, obtains single layer graphene film；
(3) one layer of copper powder layer is sprayed in single layer graphene film, the thickness of copper powder layer is 0.01-0.05mm；
(4) substrate is removed, single layer high-electroconductivity graphene film is obtained；
(5) step (2), step (3) and step (4) 3-5 times are repeated；
(6) single layer high-electroconductivity graphene film will be superimposed with each other in sealed chamber in substrate, and is passed through mixed gas,
15-30min is suppressed under the pressure of 50-200N obtains high-electroconductivity graphene film；Wherein, mixed gas is nitrogen and carbon monoxide
By 8:1 volume ratio mixes.
2. a kind of graphene composite film applied to cpu chip as described in claim 1, it is characterized in that, the CPU cores of application
Piece includes chip, heat-radiating substrate, graphene cooling mechanism and fan successively from bottom to top；
Graphene cooling mechanism includes fixed support plate, the first heat dissipation support component and the second heat dissipation support component；
Fixed support plate includes four the first vertical gripper shoes and a first level support plate, four the first vertical gripper shoes
Bottom is fixed on heat-radiating substrate and around forming the frame structure that end face is square, and first level support plate is fixed on the
The top of one vertical gripper shoe, fan are fixed on the top of first level support plate；
The quantity of first heat dissipation support component and the second heat dissipation support component is four, four first heat dissipation support component difference
Positioned at the outside of four the first vertical gripper shoes, four second heat dissipation support components are located at the four the first heat dissipation support components
Outside；
First heat dissipation support component includes the first pressure block, the second pressure block, the first heat sink and the second heat sink；First pressure-bearing
The cross sectional shape of block be up-small and down-big isosceles trapezoidal structure, the second pressure block be up big and down small isosceles trapezoidal structure, second
The quantity of pressure block is two, and two the second pressure blocks are weldingly fixed on the bottom of fan, and two the first heat sinks are fixed respectively
In the bottom of two the second pressure blocks, the bottoms of two the first heat sinks is bonded to each other fixed and vertical with the second heat sink
Top be fixedly connected, the first pressure block is fixed on the bottom of the second heat sink, and the bottom of the first pressure block is equipped with the first positioning
Convex block, the first locating convex block is plug-type to be arranged in the first positioning groove of heat-radiating substrate；
Second heat dissipation support component includes third pressure block, the 4th pressure block, third heat sink and the 4th heat sink；Third pressure-bearing
The cross sectional shape of block is up-small and down-big isosceles trapezoidal structure, and the 4th pressure block is up big and down small isosceles trapezoidal structure, third
The quantity of pressure block is two, and two third pressure blocks are weldingly fixed on the top of heat-radiating substrate, two third heat sink difference
It is fixed on the top of two third pressure blocks, is bonded to each other and fixed and vertical is dissipated with the 4th at the top of two third heat sinks
It is fixedly connected at the top of hot plate, the 4th pressure block is fixed on the top of the 4th heat sink, and the top of the 4th pressure block is equipped with second
Locating convex block, the second locating convex block is plug-type to be arranged in the second positioning groove of fan；
Second heat dissipation support component is vertical equipped with several the on the third heat sink of the first adjacent side of heat dissipation support component
Five heat sinks, the 5th heat sink one end are weldingly fixed on third heat sink, the first heat sink phase of the other end and adjacent side
Contact；Second heat dissipation support component is vertical on the third heat sink far from the first heat dissipation support component side to be equipped with several six
Heat sink, the 6th heat sink one end are weldingly fixed on third heat sink, and the other end is in contact with fan；
First heat sink, the second heat sink, third heat sink, the 4th heat sink, the 5th heat sink and the 6th heat sink include
Metal framework and the graphene composite film being arranged in metal framework.
3. a kind of graphene composite film applied to cpu chip as claimed in claim 2, it is characterized in that, the first pressure block, the
The cushion chamber that section is isosceles trapezoidal structure is equipped in two pressure blocks, third pressure block and the 4th pressure block.
4. a kind of graphene composite film applied to cpu chip as claimed in claim 2, it is characterized in that, heat-radiating substrate is from upper
Include conductive layer, insulating layer and graphene heat-conducting layer successively under and；
The cross sectional shape of the insulating layer is rectangle structure, and the lower surface of insulating layer is equipped with lower fixing groove, the top of lower fixing groove
Portion is uniformly provided with several first raised lines, and the cross sectional shape of the first raised line is triangular structure of right angle, and graphene heat-conducting layer is fixed on
In lower fixing groove；
It is symmetrically set on the upper surface of insulating layer there are two chamfering, conductive layer is equipped with corresponding with the chamfering of insulating layer second
Raised line, vertical on the second raised line to be equipped with grafting item, grafting item includes fixed part and plug division, and the fixed part of string configuration is solid
It is scheduled on the second raised line, section is that the plug division of arc-shaped structure is fixed on fixed part, and the plug-type setting of grafting item is being fallen
In the inserting groove at angle.
5. a kind of graphene composite film applied to cpu chip as claimed in claim 4, it is characterized in that, the insulating layer
Upper surface is equipped with supporting block, and the cross sectional shape of supporting block is rectangle structure, and the bottom of supporting block is recessed inwardly to form bearing
The cross sectional shape of slot, support slot is obtuse triangle structure, and the apex angle a of support slot is 160 °.
6. a kind of graphene composite film applied to cpu chip as claimed in claim 4, it is characterized in that, first raised line
Height be h1, the depth of lower fixing groove is h2, h2=2*h1.
7. a kind of graphene composite film applied to cpu chip as claimed in claim 4, it is characterized in that, the insulating layer with
Epoxy resin is that material is poured into a mould, and a layer graphene coating, the system of the graphene coating are coated on the outer surface of insulating layer
Preparation Method is as follows：
(1) graphene slurry is prepared：
1. weighing bilayer graphene 0.3-4%, graphene oxide 0.45-6%, acrylic resin 0.05- by mass percentage
0.5%, 1,3- diisopropylcarbodiimide 0.5-0.8%, salpeter solution 35-48% and ethanol solution surplus, wherein the double-deck stone
The mass ratio of black alkene and graphene oxide is 1:1.5, the mass concentration of salpeter solution is 12-25%, and the quality of ethanol solution is dense
Degree is 32-38%；
2. above-mentioned each component is mixed evenly at a temperature of 35-40 DEG C to obtain graphene slurry；
(2) graphene coating is prepared：
1. weighing graphene slurry 5-22%, epoxy resin 3-18%, polyvinylidene fluoride resin 12- by mass percentage
35%, more than cellulose 0.5-3.2%, silica 1-3%, diacetone alcohol 0.03-0.8%, silester 2-2.8% and water
Amount；
2. above-mentioned each component is obtained graphene coating after mixing at a temperature of 120-160 DEG C；
(3) graphene coating is coated on the outer surface of insulating layer, after drying, coating layer thickness 0.3-2mm.
8. a kind of graphene composite film applied to cpu chip as claimed in claim 4, it is characterized in that, graphene heat-conducting layer
It is suppressed by multilayer chip graphene oxide overlapping.
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| CN110684142A (en) * | 2019-10-29 | 2020-01-14 | 追信数字科技有限公司 | Manufacturing method of honeycomb solid-liquid composite heat dissipation material for CPU heat dissipation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110684142A (en) * | 2019-10-29 | 2020-01-14 | 追信数字科技有限公司 | Manufacturing method of honeycomb solid-liquid composite heat dissipation material for CPU heat dissipation |
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