CN208157425U - A kind of monocrystalline mixes gallium solar cell - Google Patents
A kind of monocrystalline mixes gallium solar cell Download PDFInfo
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- CN208157425U CN208157425U CN201820148167.6U CN201820148167U CN208157425U CN 208157425 U CN208157425 U CN 208157425U CN 201820148167 U CN201820148167 U CN 201820148167U CN 208157425 U CN208157425 U CN 208157425U
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Abstract
The utility model discloses a kind of monocrystalline to mix gallium solar cell.Including：Doped with the monocrystal silicon substrate of gallium, and the emitter on its light-receiving surface, it is placed in front surface antireflection film/passivating film of emitter surface, it is placed in the front electrode of front surface antireflection film/passivation film surface conductive material composition, conductive material partial penetration front surface antireflection film/passivation membrane material or opens diaphragm area by the part on front surface antireflection film/passivating film and emitter forms direct contact in metallization heat treatment, and it is placed in the rear electrode of backside of substrate, wherein rear electrode consists of two parts, the aluminium electrode of back surface is set, and the silver electrode as welding photovoltaic component point.The preparation method of this solar cell includes surface-texturing being carried out in the silicon base for mix gallium, and prepare emitter in the front of battery, preparation passivation and antireflective coating in front, and prepares electrode, and metallization heat treatment process in the obverse and reverse of battery.
Description
Technical field
The utility model relates to technical field of solar batteries, in particular to a kind of monocrystalline mixes gallium solar cell.
Background technique
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
P-type solar cell substrate used at present, generally doped with the silicon wafer of boron element.But it uses doped with boron member
As the solar cell of substrate, certain decaying can occur the monocrystalline silicon of element under solar irradiation for battery efficiency together.This decaying
Referred to as light decay (LID).The efficiency decaying 1.5~7% of solar cell made of boron-doping monocrystalline silicon piece in photovoltaic industry at present,
Attenuation degree size depends on doping concentration, the oxygen content, battery structure of boron element.The sheet that the photo attenuation of this battery generates
Shape is understood in the case where light injects instead of the oxygen atom of position boron atom and monocrystalline silicon mid gap state in matter reason and doping substrate
At boron oxygen complex.And boron oxygen complex is deep energy level complex centre, can reduce the service life of minority carrier in this way, to reduce
The diffusion length of minority carrier causes the efficiency of solar cell to reduce, and influences the long-term reliability of battery.
Utility model content
It in view of the above problems, the utility model, which provides a kind of monocrystalline, mixes gallium solar cell, can solve the above problem, drop
Photo attenuation caused by the low oxygen complex as boron.
The technical solution of the utility model is：
A kind of monocrystalline mixes gallium solar cell, successively includes by front to the back side：Front electrode, front surface antireflection film/passivation
Film, emitter, monocrystalline mix gallium silicon base and rear electrode；The rear electrode includes aluminium electrode and back side silver electrode.
The front electrode is by partial penetration front surface antireflection film/passivating film or by front surface antireflection film/blunt
Change the part on film and open diaphragm area and formed with emitter and directly contacts.
The back side that monocrystalline mixes gallium silicon base is arranged in the Al-BSF electrode, and back side silver electrode is arranged in Al-BSF electrode
On；Aluminium electrode and back side silver electrode mix gallium silicon base rear-face contact with monocrystalline.
The aluminium electrode and monocrystalline mixes the hole doping layer between gallium silicon base comprising one layer of doping component for aluminium, hole
Doped layer with a thickness of 1~15um.
Further include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer with a thickness of 1~
5um。
Front surface antireflection film/the passivating film is silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films
One of or a variety of laminations constitute；Front surface antireflection film/passivating film refractive index is 1.5~2.5,50~100nm of thickness.
Compared with the existing technology, the utility model has the following technical effects：
The utility model includes the monocrystal silicon substrate doped with gallium, and the emitter on its light-receiving surface, is placed in transmitting
Front surface antireflection film/passivating film of pole surface is placed in the front electricity of front surface antireflection film/passivation film surface conductive material composition
Pole, conductive material high temperature sintering partial penetration front surface antireflection film/passivation membrane material or by front surface antireflection film/passivating film
On part open diaphragm area and semiconductor forms direct contact, and be placed in the rear electrode of backside of substrate, gallium mixed using monocrystalline
Base material of the silicon as solar cell is prepared for monocrystalline and mixes gallium solar cell, and the replacement adulterated in substrate can be reduced by mixing gallium
The oxygen atom of position boron atom and monocrystalline silicon mid gap state will form boron oxygen complex in the case where light injects, and will increase so few
The service life of number carrier causes the efficiency of solar cell to increase, and guarantee electricity to increase the diffusion length of minority carrier
The long-term reliability in pond.The battery structure can reduce or inhibit substantially the light decay of single crystal silicon solar cell, can be by monocrystalline silicon too
The light decay in positive electricity pond controls within 1%.
Further, there can also be a certain amount of boron element in silicon base, can also there is certain suppression to light decay in the case
Effect processed, but inhibitory effect can be slightly worse than the silicon wafer for only mixing gallium.
The aluminium electrode and monocrystalline being further formed mixes the silicon substrate that one layer of doping component between gallium silicon base is aluminium
Hole doping layer.The silicon substrate hole doping layer and silicon base of this layer of aluminium form the potential difference of p+/p, to improve entire battery
Open-circuit voltage, the recombination rate near the electrode is also reduced, to improve transfer efficiency.
It may also include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer is with a thickness of 1
~5um.The presence of this alusil alloy layer, the semiconductor base of the conductive electrode and p-type that can make aluminum, which is formed, preferably to be connect
Touch performance.
Detailed description of the invention
Fig. 1 is the battery schematic diagram of an example in the embodiment of the solar cell of the utility model.
Fig. 2 is the front electrode schematic diagram of an example in the embodiment of the solar cell of the utility model.
Fig. 3 is the rear electrode schematic diagram of an example in the embodiment of the solar cell of the utility model.
Wherein mark：1 mixes gallium silicon base for monocrystalline, and 2 be emitter, and 3 be front surface antireflection film/passivating film, and 4 be aluminium electricity
Pole, 5 be back side silver electrode, and 6 be the thin grid line in front, and 7 be positive connection electrode.
Specific embodiment
Citing specific embodiment is illustrated the utility model below.It should be pointed out that following embodiment is served only for
The utility model is described further, the protection scope of the utility model is not represented, other people are according to the present utility model to mention
Show the nonessential modification and adjustment made, still falls within the protection scope of the utility model.
As shown in Figure 1, a kind of monocrystalline of the utility model mixes gallium solar cell, including：Doped with the monocrystal silicon substrate 1 of gallium,
And emitter 2 and aluminium electrode on it, it is placed in the front surface antireflection film/passivating film 3 on 2 surface of emitter, front is placed in and subtracts
The front electrode being made of conductive material on 3 surface of reflectance coating/passivating film is placed in the back side electricity that monocrystalline mixes 1 back side of gallium silicon base
Pole；Front side conductive material is by high temperature sintering partial penetration front surface antireflection film/3 material of passivating film or by positive antireflective
Diaphragm area is opened in part on film/passivating film 3 and emitter 2 forms direct contact, forms front electrode；The rear electrode two
It is grouped as, the aluminium electrode 4 including being coated on back surface, and the back side silver electrode 5 as welding photovoltaic component point.Two parts electricity
Extremely mixes 1 back side of gallium silicon base with the monocrystalline of battery and directly contact.It is adulterated doped with gallium element in the monocrystal silicon substrate 1 of gallium dense
Degree is 1 × 1013~1 × 1017A atom/cubic centimetre.
Preferably, monocrystalline mix gallium silicon base 1 can also be doped with boron, wherein the concentration of boron element doping is 1 × 1013~1
×1017A atom/cubic centimetre.
Front surface antireflection film/passivating film of semiconductor surface is made of the superposition of one or more layers film；Positive antireflective
Film/passivating film is made of one of silica, silicon nitride, silicon oxynitride, aluminium oxide, silicon carbide, or by a variety of groups therein
At；Front surface antireflection film/passivating film overall refractive index 1.5~2.5, front surface antireflection film/passivating film overall thickness 50~
100nm。
Light-receiving surface of the emitter 2 in battery.The front electrode of solar cell, preferably silver electrode.
As shown in Fig. 2, front electrode includes for guiding the thin grid line 6 in the front of electric current and connecting for the positive of collected current
Receiving electrode 7, the thin grid line 6 in front are arranged vertically with positive connection electrode 7.
As shown in figure 3, the back side silver electrode 5 in rear electrode is distributed in the region at the back side in local bulk and monocrystalline is mixed
Gallium silicon base 1 forms direct contact, and monocrystalline mixes remaining backside surface of gallium silicon base 1 except marginal portion and silver electrode peripheral part
Other than region, residual surface is covered by aluminium electrode 4；Aluminium electrode 4 and monocrystalline mix gallium silicon base 1 and form rear-face contact.
The rear-face contact of aluminium electrode consists of the following parts：Main conductive ingredient is aluminium electrode 4, and monocrystalline mixes gallium silicon base 1,
And it is placed in aluminium electrode 4 and monocrystalline mixes the silicon substrate hole doping layer that one layer of main doping component between gallium silicon base 1 is aluminium, it should
Hole doping layer can be further doped with boron element；Hole doping layer hole boron doping concentration is 5 × 1016~1 × 1021
A atom/cubic centimetre；The hole doping layer with a thickness of 1~15um.
It further include one layer of alusil alloy layer, with a thickness of 1~5um between hole doping layer and aluminium electrode 4.
Preferably, the rear-face contact of aluminium electrode also may not include hole doping layer or alusil alloy layer.
The utility model additionally provides the preparation method that a kind of monocrystalline mixes gallium solar cell, includes the following steps：
1) gallium silicon base 1 is mixed to monocrystalline and carries out surface-texturing and cleaning；
2) emitter 2 is carried out to prepare；
3) edge insulation processing is carried out；
4) passivated reflection reducing for carrying out light-receiving surface penetrates the preparation of film 3；
5) the electrode slurry bed of material comprising conductive compositions is graphically formed in front and back sides；
6) metallization heat treatment process is carried out；The peak temperature for the heat treatment process that metallizes is 500~1000 DEG C.Electrode slurry
It include a step or several printing process and one or several drying courses in the graphical distributed process of the bed of material, wherein several
The electrocondution slurry of step can be identical, can not also be identical.
Embodiment 1
The first step mixes gallium silicon wafer to monocrystalline and carries out surface-texturing；It is 156.75mm that this, which mixes gallium silicon wafer opposite side distance, and diameter is
220mm, boracic, the concentration containing gallium are not 2 × 10 in silicon wafer16A atom/cubic centimetre.It is clear in slot type that gallium silicon wafer is mixed to this monocrystalline
The texturing for completing surface in washing machine using 2~3wt%NaOH solution forms pyramid structure on surface.Wherein solution temperature
80 DEG C, duration 10min.And pass through HF pickling, washing, drying and etc., remove surface metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2It carries
POCl3Source.850 DEG C of peak temperature, diffusion time 110 minutes of diffusion.
Third step carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side will cause the n-type doping area of electric leakage around the n-type doping area formed and edge is expanded.In addition in this processing step
In also include that HF pickling removes positive phosphorosilicate glass.
4th step carries out the preparation of front surface antireflection film/passivating film.It is carried out using the enhanced plasma gas-phase deposit of tubular type
The deposition of silicon nitride, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20,
Upper silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material in the front and back of battery as required.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, and connection electrode radical 4, connection electrode 7 and thin
6 direction of grid line is orthogonal and is connected in intersection.The back side uses screen printing mode to be printed with aluminium paste as aluminium electrode.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface, prepares front electrode and rear electrode respectively.
Embodiment 2
The first step mixes gallium silicon wafer to monocrystalline and carries out surface-texturing；It is 156.75mm that this, which mixes gallium silicon wafer opposite side distance, and diameter is
210mm, the concentration of boron is 4 × 10 in silicon wafer16A atom/cubic centimetre, the concentration containing gallium are 3 × 1015A atom/cube li
Rice.The texturing that gallium silicon wafer completes surface in groove-type cleaning machine using 2~3wt%NaOH solution is mixed to this monocrystalline, on surface
Form pyramid structure.Wherein 80 DEG C of solution temperature, duration 10min.And pass through HF pickling, washing, drying and etc., it goes
Except surface metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2It carries
POCl3Source.840 DEG C of peak temperature, diffusion time 90 minutes of diffusion.
Third step carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side will cause the n-type doping area of electric leakage around the n-type doping area formed and edge is expanded.In addition in this processing step
In also include that HF pickling removes positive phosphorosilicate glass.
4th step carries out the preparation of front surface antireflection film/passivating film.It is carried out using the enhanced plasma gas-phase deposit of tubular type
The deposition of silicon nitride, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20,
Upper silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material in the front and back of battery as required.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, and connection electrode radical 4, connection electrode 7 and thin
6 direction of grid line is orthogonal and is connected in intersection.The back side is printed with aluminium paste using screen printing mode.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface, prepares front electrode and rear electrode respectively.
The light decay result such as following table of the actual test for the battery that above-mentioned two embodiment is prepared：
Light decay tests test condition：Light intensity 1suns, 65 DEG C of environment temperature, the time is for 24 hours.
Table 1
Data show that the light decay of battery is controlled 3% or less in table 1.Preferably inhibit the light decay of battery.
The protection scope of the utility model is not limited to the above embodiments, comes for those of ordinary skill in the art
It says, if the various changes and deformation to the utility model progress belong to the utility model claims and equivalent technologies range
It is interior, then including the intention of the utility model also includes these changes and deforms.
Claims (6)
1. a kind of monocrystalline mixes gallium solar cell, which is characterized in that successively include by front to the back side：Front electrode, positive anti-reflection
It penetrates film/passivating film (3), emitter (2), monocrystalline and mixes gallium silicon base (1) and rear electrode；The rear electrode includes aluminium electrode
(4) and back side silver electrode (5).
2. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the front electrode passes through office
Portion penetrate front surface antireflection film/passivating film (3) or by the part on front surface antireflection film/passivating film (3) open diaphragm area with
Emitter (2), which is formed, directly to be contacted.
3. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that aluminium electrode (4) setting
The back side of gallium silicon base (1) is mixed in monocrystalline, back side silver electrode (5) is arranged on aluminium electrode (4)；Aluminium electrode (4) and back silver electricity
Gallium silicon base (1) rear-face contact is mixed with monocrystalline in pole (5).
4. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the aluminium electrode (4) and list
Crystalline substance mix between gallium silicon base (1) be comprising one layer of doping component aluminium hole doping layer, hole doping layer with a thickness of 1~
15um。
5. a kind of monocrystalline according to claim 4 mixes gallium solar cell, which is characterized in that the hole doping layer and aluminium
It further include one layer of alusil alloy layer between electrode (4), alusil alloy layer is with a thickness of 1~5um.
6. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the front surface antireflection film/
Passivating film (3) is that one of silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films or a variety of laminations are constituted；Just
Face antireflective coating/passivating film (3) refractive index is 1.5~2.5,50~100nm of thickness.
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| CN201820148167.6U CN208157425U (en) | 2018-01-29 | 2018-01-29 | A kind of monocrystalline mixes gallium solar cell |
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