CN207947274U - A kind of electrostatic discharge protective circuit and integrated circuit - Google Patents
A kind of electrostatic discharge protective circuit and integrated circuit Download PDFInfo
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- CN207947274U CN207947274U CN201721468121.4U CN201721468121U CN207947274U CN 207947274 U CN207947274 U CN 207947274U CN 201721468121 U CN201721468121 U CN 201721468121U CN 207947274 U CN207947274 U CN 207947274U
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Abstract
The utility model belongs to IC design technical field, provides a kind of electrostatic discharge protective circuit and integrated circuit, the electrostatic discharge protective circuit include：Substrate and the electrostatic preventing structure on the substrate；Electrostatic preventing structure is wherein; the electrostatic preventing structure is formed by semi-conducting material; including the first PN junction diode and the second PN junction diode; the first end of first PN junction diode is connected with the first connecting pin; the first end of second PN junction diode is connected with second connection end; the second end of first PN junction diode is connected with the second end of second PN junction diode, and the second end of first PN junction diode is identical with the polarity of the second end of second PN junction diode.Preventing from being protected the first end connecting pin of chip and second connection end to generate high current leads to that chip is protected to burn; and additional electronic component need not be increased; reduce number of electronic components, reduce manufacturing cost, reduces by the circuit mounting area of protection chip.
Description
Technical field
The utility model belongs to IC design technical field more particularly to a kind of electrostatic discharge protective circuit and integrated electricity
Road.
Background technology
Fig. 1 is that existing single lithium battery typically protects circuit, wherein B+, B- to be separately connected the anode of lithium battery, cathode,
The ends B+ connect the ends VDD and VSS of point protection chip 110 by the low-pass filtering that R1, C1 are constituted；MN1 and MN2 is respectively to discharge
Metal-oxide-semiconductor and charging metal-oxide-semiconductor, D1 and D2 are respectively the parasitic diode of the two, MN1 and MN2 turn-on and turn-off distinguish protected core
DO, CO output signal of piece control.P+ and P- connects the anode of charger, negative terminal respectively, and the ends P- are connected to by a resistance R2
The ends CS of chip are protected, the effect of the resistance is to play the role of current limliting in charger reversal connection, prevents from leading when charger reversal connection
Protection chip 110 is caused to burn.In the case of lithium battery system small, it is desirable that the periphery of entire lithium battery protection circuit
Device lacking as possible, and existing protection circuit attached resistance R2 outside protection chip 110, and number of electronic components is caused to increase
More, manufacturing cost increases, and circuit mounting area becomes larger.
Therefore, there is protection circuit in traditional technical solution and attached resistance R2 outside chip, lead to electronic component number
The problem of amount increases, and manufacturing cost increases, and circuit mounting area becomes larger.
Utility model content
The purpose of this utility model is to provide a kind of electrostatic discharge protective circuits, it is intended to solve to exist in traditional technical solution
Number of electronic components it is more, manufacturing cost is high, the big problem of circuit mounting area.
A kind of electrostatic discharge protective circuit, the circuit include：
Substrate and the electrostatic preventing structure on the substrate；
Wherein, the electrostatic preventing structure is formed by semi-conducting material, including the first PN junction diode and the second PN junction two
The first end of pole pipe, first PN junction diode is connected with the first connecting pin, the first end of second PN junction diode with
Second connection end is connected, and the second end of first PN junction diode is connected with the second end of second PN junction diode, and
The second end of first PN junction diode is identical with the polarity of the second end of second PN junction diode.
Further, the electrostatic preventing structure includes：
Deep-well region on the substrate；
The first well region being disposed adjacent and the second well region positioned at the top of the deep-well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, the doping type of first well region and second well region is different, first doped region and described the
The doping type of two doped regions is identical.
Further, the deep-well region is the first doping type, and first well region is the first doping type, second trap
Area is the second doping type, and first well region is two, and second well region is located between two first well regions, often
The upper surface of one first well region extends downwardly and is formed with first doped region.
Further, the electrostatic preventing structure includes：
Deep-well region on the substrate；
The first well region being disposed adjacent and the second well region positioned at the top of the deep-well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, first well region and second well region are the first doping type, first doped region and described the
Two doped regions are the second doping type.
Further, the doping concentration of first doped region and second doped region is higher than the substrate, the depth
The doping concentration of well region, first well region and second well region.
Further, first doped region is connect with first connecting pin, and first connecting pin is by protection chip
Power pins；Second doped region and the second connection end, the second connection end are defeated by the input of protection chip
Go out pin.
Further, the electrostatic preventing structure includes：
Deep-well region on the substrate；
Positioned at the first well region of the top of the deep-well region, the second well region and it is set to first well region and described second
Third well region between well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, first well region, second well region, the first doped region and second doped region are identical mix
Miscellany type, the third well region are different from the doping type of the first well region.
Further, the doping concentration of first doped region and second doped region is higher than the substrate, the depth
The doping concentration of well region, first well region, second well region and the third well region.
Further, first doped region is connect with first connecting pin, and first connecting pin is by protection chip
Power pins；Second doped region and the second connection end, the second connection end are defeated by the input of protection chip
Go out pin.
Include by protection chip and above-mentioned electrostatic discharge protective circuit in addition, additionally providing a kind of integrated circuit.
Above-mentioned electrostatic discharge protective circuit passes through the first PN junction diode formed in electrostatic preventing structure and the second PN junction two
Pole pipe, the first end of the first PN junction diode are connected with the first connecting pin, and the first end of the second PN junction diode is connect with second
End is connected, and the second end of the first PN junction diode is connected with the second end of the second PN junction diode, and the first PN junction diode
Second end is identical with the polarity of the second end of the second PN junction diode.The first end connecting pin and second for preventing from being protected chip connect
Connecing end generation high current leads to that chip is protected to burn, and need not increase additional electronic component, reduces electronic component number
Amount, reduces manufacturing cost, reduces the circuit mounting area of protection chip.
Description of the drawings
Fig. 1 is the electrical block diagram of traditional battery protecting circuit；
Fig. 2 is the electrostatic protection circuit structure schematic diagram that the utility model embodiment provides；
Fig. 3 is the concrete structure diagram for the electrostatic discharge protective circuit that the first embodiment of the utility model provides；
Fig. 4 is the concrete structure diagram for the electrostatic discharge protective circuit that another embodiment of the utility model provides；
Fig. 5 is the concrete structure diagram for the electrostatic discharge protective circuit that the another embodiment of the utility model provides；
Fig. 6 is the concrete structure diagram for the electrostatic discharge protective circuit that the another embodiment of the utility model provides；
Fig. 7 is the concrete structure diagram for the electrostatic discharge protective circuit that the another embodiment of the utility model provides.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to explain
The utility model is not used to limit the utility model.
It please refers to shown in Fig. 2-7, the utility model provides a kind of electrostatic discharge protective circuit, including substrate and on substrate
Electrostatic preventing structure；Electrostatic preventing structure is formed by semi-conducting material, including the first PN junction diode and the second PN junction diode,
The first end of first PN junction diode is connected with the first connecting pin, first end and the second connection end phase of the second PN junction diode
Even, the second end of the first PN junction diode is connected with the second end of the second PN junction diode, and the second of the first PN junction diode
End is identical with the polarity of the second end of the second PN junction diode.
Specifically, the cathode of the cathode of the first PN junction diode D1 and the second PN junction diode D2 connect, the first PN junction two
The anode of pole pipe D1 and the anode of the second PN junction diode D2 are connect with the first connecting pin and second connection end respectively；Alternatively, the
The anode connection of the anode and the second PN junction diode D2 of one PN junction diode D1, the cathode of the first PN junction diode D1 and the
The cathode of two PN junction diode D2 is connect with the first connecting pin and second connection end respectively, in the present embodiment, the first connecting pin
For by the power pins VDD of protection chip, second connection end is by the input and output pin CS of protection chip, when by protection chip
Power pins VDD and when input and output pin CS short circuits, electrostatic discharge protective circuit can prevent from generating between two pins big
Electric current saves the resistance that conventional batteries protection circuit in Fig. 1 is connected to the ends CS of protection chip to protect chip not to be burned out
R2 reduces mounting area.
As shown in figure 3, in a wherein embodiment, electrostatic preventing structure includes：Deep-well region on substrate, be located at it is deep
The first well region 10 of the top of well region being disposed adjacent and the second well region 20, the first doped region 30 and the second doped region 40；The
One doped region 30 is extended downwardly from the upper surface of the first well region 10 and is formed, and the second doped region 40 is from the upper surface of the second well region 20
It extends downwardly and is formed；Wherein, deep-well region is n-type doping, and the first well region 10 is different with the doping type of the second well region 20, first
Doped region 30 is identical as the doping type of the second doped region 40.First doped region 30 and the second doped region 40 are connect respectively by protection core
The power pins VDD and input and output pin CS of piece, and the doping concentration of the first doped region 30 and the second doped region 40 is more than deeply
The doping concentration of well region, the first well region 10 and the second well region 20.
Specifically, as shown in figure 3, the first well region 10 is n-type doping, the second well region 20 adulterates for p-type, the first doped region 30
It is n-type doping with the second doped region 40, the first well region 10 and the second well region 20 form the first PN junction diode D1, wherein the
One well region 10 forms the cathode of the first PN junction diode D1, and the second well region 20 forms the anode of the first PN junction diode D1；Second
Well region 20 and the second doped region 40 form the second PN junction diode D2, wherein the second well region 20 forms the second PN junction diode D2
Anode, the second doped region 40 formed the second PN junction diode D2 cathode.
Alternatively, as shown in figure 4, the first well region 10 is n-type doping, the second well region 20 adulterates for p-type, 30 He of the first doped region
Second doped region 40 is p-type doping, and the first well region 10 and the first doped region 30 form the second PN junction diode D2, wherein the
One well region 10 forms the cathode of the second PN junction diode D2, and the first doped region 30 forms the anode of the second PN junction diode D2；The
One well region 10 and the second well region 20 form the second PN junction diode D2, wherein the first well region 10 forms the first PN junction diode D1
Cathode, the second well region 20 formed the first PN junction diode D1 anode.
It should be noted that in the above-described embodiments, the first well region is two, and the second well region is located in two the first well regions
Between, the upper surface of every 1 first well region extends downwardly and is formed with one first doped region, so that the electrostatic preventing structure is formed
Isolation device.
In another embodiment, electrostatic preventing structure includes：Deep-well region on substrate；Top positioned at deep-well region
First well region 10, the second well region 20 and the third well region 50 set on the first well region 10 and the second well region 20；First doped region 30,
First doped region 30 is extended downwardly from the upper surface of the first well region 10 and is formed；Second doped region 40, the second doped region 40 is from
The upper surface of two well regions 20 extends downwardly and is formed；Wherein, deep-well region is n-type doping, the first well region 10, the second well region 20,
One doped region 30 and the second doped region 40 are the first doping type, and third well region 50 is the second doping type.First doped region
30 and second doped region 40 connect respectively by the power pins VDD and input and output pin CS of protection chip, and the first doped region 30
Doping concentration with the second doped region 40 is more than deep-well region, the doping concentration of the first well region 10 and the second well region 20.
Specifically, as shown in figure 5, the first well region 10 and the second well region 20 are n-type doping, the first doped region 30 and second is mixed
Miscellaneous area 40 is p-type doping, and the first well region 10 and the first doped region 30 form the first PN junction diode D1, wherein the first well region
10 form the cathode of the first PN junction diode D1, and the first doped region 30 forms the anode of the first PN junction diode D1；Second well region
20 and second doped region 40 form the second PN junction diode D2, wherein the second well region 20 forms the negative of the second PN junction diode D2
Pole, the second doped region 40 form the anode of the second PN junction diode D2.
In another embodiment, electrostatic preventing structure includes：Deep-well region on substrate；Top positioned at deep-well region
First well region 10, the second well region 20 and the third well region 50 between the first well region 10 and the second well region 20；First doping
Area 30, the first doped region 30 are extended downwardly from the upper surface of the first well region 10 and are formed；Second doped region 40, the second doped region 40
It extends downwardly and is formed from the upper surface of the second well region 20；Wherein, deep-well region is n-type doping, the first well region 10, the second well region
20, the first doped region 30 and the second doped region 40 are the first doping type, and third well region 50 is the second doping type.First
Doped region 30 and the second doped region 40 are connect respectively by the power pins VDD and input and output pin CS of protection chip, and first mixes
The doping concentration of miscellaneous area 30 and the second doped region 40 is more than deep-well region, the first well region 10, the second well region 20 and third well region 50
Doping concentration.
Specifically, as shown in fig. 6, the first well region 10, the second well region 20, the first doped region 30 and the second doped region 40 are
N-type doping, third well region 50 adulterate for p-type, and the first well region 10 and third well region 50 form the first PN junction diode D1, wherein
First well region 10 forms the anode of the first PN junction diode D1, and third well region 50 forms the cathode of the first PN junction diode D1；The
Two well regions 20 and third well region 50 form the second PN junction diode D2, wherein the second well region 20 forms the second PN junction diode D2
Anode, third well region 50 formed the second PN junction diode D2 cathode.
Alternatively, as shown in fig. 7, the first well region 10, the second well region 20, the first doped region 30 and the second doped region 40 are P
Type adulterates, and third well region 50 is n-type doping, and the first well region 10 and third well region 50 form the first PN junction diode D1, wherein
First well region 10 forms the anode of the first PN junction diode D1, and third well region 50 forms the cathode of the first PN junction diode D1；The
Two well regions 20 and third well region 50 form the second PN junction diode D2, wherein the second well region 20 forms the second PN junction diode D2
Anode, third well region 50 formed the second PN junction diode D2 cathode.It should be noted that in this embodiment, third trap
Area is three, and the first well region and the second well region are located in respectively between two adjacent third well regions, so that the electrostatic protection knot
It is configured to isolation device.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
All any modification, equivalent and improvement etc., should be included in the utility model made by within the spirit and principle of utility model
Protection domain within.
Claims (9)
1. a kind of electrostatic discharge protective circuit, which is characterized in that the circuit includes：
Substrate and the electrostatic preventing structure on the substrate；
Wherein, the electrostatic preventing structure is formed by semi-conducting material, including the first PN junction diode and the second PN junction diode,
The first end of first PN junction diode is connected with the first connecting pin, and the first end of second PN junction diode connects with second
It connects end to be connected, the second end of first PN junction diode is connected with the second end of second PN junction diode, and described the
The second end of one PN junction diode is identical with the polarity of the second end of second PN junction diode.
2. electrostatic discharge protective circuit as described in claim 1, which is characterized in that the electrostatic preventing structure includes：
Deep-well region on the substrate；
The first well region being disposed adjacent and the second well region positioned at the top of the deep-well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, first well region is different with the doping type of second well region, and first doped region is mixed with described second
The doping type in miscellaneous area is identical.
3. electrostatic discharge protective circuit as claimed in claim 2, which is characterized in that the deep-well region is the first doping type, described
First well region be the first doping type, second well region be the second doping type, first well region be two, described second
Well region is located between two first well regions, and the upper surface of each first well region extends downwardly and is formed with described in one
First doped region.
4. electrostatic discharge protective circuit as described in claim 1, which is characterized in that the electrostatic preventing structure includes：
Deep-well region on the substrate；
The first well region being disposed adjacent and the second well region positioned at the top of the deep-well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, first well region and second well region are the first doping type, and first doped region is mixed with described second
Miscellaneous area is the second doping type.
5. the electrostatic discharge protective circuit as described in claim 2 or 4, which is characterized in that first doped region and described second
The doping concentration of doped region is higher than the doping concentration of the substrate, the deep-well region, first well region and second well region.
6. electrostatic discharge protective circuit as described in claim 1, which is characterized in that the electrostatic preventing structure includes：
Deep-well region on the substrate；
Positioned at the first well region of the top of the deep-well region, the second well region and it is set to first well region and second well region
Between third well region；
First doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Second doped region, first doped region are extended downwardly from the upper surface of first well region and are formed；
Wherein, first well region, second well region, the first doped region and second doped region are identical doping class
Type, the third well region are different from the doping type of the first well region.
7. electrostatic discharge protective circuit as claimed in claim 6, which is characterized in that first doped region and second doping
The doping concentration in area is higher than the substrate, the deep-well region, first well region, second well region and the third well region
Doping concentration.
8. such as claim 2,4 or 6 any one of them electrostatic discharge protective circuits, which is characterized in that first doped region and institute
The connection of the first connecting pin is stated, first connecting pin is by the power pins of protection chip；Second doped region and described the
Two connecting pins, the second connection end are by the input and output pin of protection chip.
9. a kind of integrated circuit, which is characterized in that including by protection chip and as described in any one of claim 1 to 8
Electrostatic discharge protective circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721468121.4U CN207947274U (en) | 2017-11-06 | 2017-11-06 | A kind of electrostatic discharge protective circuit and integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721468121.4U CN207947274U (en) | 2017-11-06 | 2017-11-06 | A kind of electrostatic discharge protective circuit and integrated circuit |
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| Publication Number | Publication Date |
|---|---|
| CN207947274U true CN207947274U (en) | 2018-10-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201721468121.4U Active CN207947274U (en) | 2017-11-06 | 2017-11-06 | A kind of electrostatic discharge protective circuit and integrated circuit |
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| Country | Link |
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| CN (1) | CN207947274U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110888517A (en) * | 2019-10-08 | 2020-03-17 | 深圳市稳先微电子有限公司 | System on chip |
-
2017
- 2017-11-06 CN CN201721468121.4U patent/CN207947274U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110888517A (en) * | 2019-10-08 | 2020-03-17 | 深圳市稳先微电子有限公司 | System on chip |
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Address after: 518000 1701, building 1, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee after: Fuman microelectronics Group Co.,Ltd. Address before: 518000 18 / F, west area, Shidai science and technology building, nongyuan Road, Futian District, Shenzhen City, Guangdong Province Patentee before: FINE MADE MICROELECTRONICS GROUP CO.,LTD. |
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Address after: 518000, Building 101, Fuman Microelectronics Group Co., Ltd., Intersection of Renmin East Road and Shouhe Road, Jinsha Community, Kengzi Street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: Fuman microelectronics Group Co.,Ltd. Country or region after: China Address before: 518000 1701, building 1, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee before: Fuman microelectronics Group Co.,Ltd. Country or region before: China |