CN207896944U - Thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis - Google Patents
Thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis Download PDFInfo
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- CN207896944U CN207896944U CN201820198505.7U CN201820198505U CN207896944U CN 207896944 U CN207896944 U CN 207896944U CN 201820198505 U CN201820198505 U CN 201820198505U CN 207896944 U CN207896944 U CN 207896944U
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Abstract
The utility model provides a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis, including substrate, first electrode, piezoelectric layer and the second electrode set gradually from top to bottom, and reflecting interface is equipped between substrate and first electrode；Wherein the middle section of piezoelectric layer is located at active area, and piezoelectric layer includes the preferred piezoelectric layer of c-axis, further includes the preferred piezoelectric layer of non-c-axis in the piezoelectric layer, and part or all of the preferred piezoelectric layer of the c-axis is located at the inside of the preferred piezoelectric layer of non-c-axis；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis, and is located in active area.The utility model to can inhibit the resonance of the lateral wave or spurious modes of the preferred piezoelectric layer generation of c-axis in piezoelectric layer, and then promotes the Q values of resonator and reduces spurious resonance by the way that the non-preferred piezoelectric layer of c-axis is arranged in piezoelectric layer.
Description
Technical field
The utility model belongs to thin film bulk acoustic wave resonator field, and in particular to a kind of with the preferred piezoelectric layer of non-c-axis
Thin film bulk acoustic wave resonator.
Background technology
Thin film bulk acoustic wave resonator is to constitute the core devices of bulk accoustic wave filter, and the quality of performance determines filter
The quality of performance.In order to provide high performance bulk accoustic wave filter, it is desirable to provide high q-factor, smaller spurious resonance resonator.
Fig. 1 is a kind of traditional films bulk acoustic resonator structure schematic diagram, wherein being equipped with second electrode successively from top to bottom
101, it is equipped between piezoelectric layer 102, first electrode 103 and substrate 105, wherein substrate 105 and first electrode 103 as reflection circle
The air chamber 104 in face.There are many kinds of the currently used methods for putting forward high q-factor, reducing spurious resonance, and relatively common is to provide more
Good piezoelectricity layer material.
Utility model content
The technical problems to be solved in the utility model is：A kind of film bulk acoustic with the preferred piezoelectric layer of non-c-axis is provided
Resonator can promote the Q values of resonator and reduce spurious resonance.
The technical solution that the utility model is taken to solve above-mentioned technical problem is：One kind having the preferred piezoelectricity of non-c-axis
The thin film bulk acoustic wave resonator of layer, including the substrate, first electrode, piezoelectric layer and the second electrode that set gradually from top to bottom, base
Reflecting interface is equipped between bottom and first electrode；Wherein the middle section of piezoelectric layer is located at active area, and piezoelectric layer includes that c-axis is preferred
Piezoelectric layer, it is characterised in that：Further include the preferred piezoelectric layer of non-c-axis in the piezoelectric layer, the one of the preferred piezoelectric layer of the c-axis
It is positioned partially or entirely in the inside of the preferred piezoelectric layer of non-c-axis；The preferred piezoelectric layer of c-axis for being wherein located inside is preferably pressed by non-c-axis
Electric layer is surrounded, and is located in active area.
By said program, the preferred piezoelectric layer of non-c-axis is located in active area side, active area outside or across active area
Interior outside.
By said program, the reflecting interface is air chamber, back of the body chamber or Bragg mirror.
By said program, the preferred piezoelectric layer of non-c-axis uses non-piezoelectric material.
By said program, the non-piezoelectric material is SiO2。
By said program, the preferred piezoelectric layer of non-c-axis uses the piezoelectric material different from the preferred piezoelectric layer of c-axis, and
Crystallization property is also different；The c-axis of the non-preferred piezoelectric layer of c-axis is oriented to c-axis and tilts, horizontally or vertically.
By said program, the preferred piezoelectric layer of non-c-axis is to have phase in the same piezoelectric layer with the preferred piezoelectric layer of c-axis
The film of same piezoelectric material, different crystallization properties；The c-axis of the non-preferred piezoelectric layer of c-axis is oriented to c-axis and tilts, horizontally or vertically；
This resonator further includes the crystal orientation for controlling the crystallization property that the preferred piezoelectric layer of non-c-axis is formed in growth
Control layer.
By said program, the crystal orientation control layer is thick by changing surface in the first electrode surface contacted with piezoelectric layer
Rugosity and formed.
By said program, the crystal orientation control layer is arranged between the first electrode and the preferred piezoelectric layer of non-c-axis,
Crystal orientation control layer uses and the unmatched metal of first electrode lattice.
By said program, the piezoelectric material is one kind in AlN, ZnO, PZT, BST.
By said program, the consistency of thickness of the thickness and the preferred piezoelectric layer of c-axis of the preferred piezoelectric layer of non-c-axis.
The beneficial effects of the utility model are：By the way that the non-preferred piezoelectric layer of c-axis is arranged in piezoelectric layer, in piezoelectric layer energy
Enough inhibit the resonance of the lateral wave or spurious modes of the preferred piezoelectric layer generation of c-axis, and then promotes the Q values of resonator and reduce and post
Raw resonance.
Description of the drawings
Fig. 1 is a kind of traditional films bulk acoustic resonator structure schematic diagram.
Fig. 2 is the structural schematic diagram of the utility model embodiment one.
Fig. 3 is the structural schematic diagram of the utility model embodiment two.
Fig. 4 is the structural schematic diagram of the utility model embodiment three.
Fig. 5 is the structural schematic diagram of the utility model embodiment four.
Fig. 6 is the structural schematic diagram of the utility model embodiment five.
Fig. 7 is the structural schematic diagram of the utility model embodiment six.
Fig. 8 is the structural schematic diagram of the utility model embodiment seven.
Fig. 9 is the scattering parameter figure of one thin film bulk acoustic wave resonator of the prior art.
Figure 10 is the scattering parameter figure of the utility model embodiment one.
Figure 11 is the scattering parameter comparison diagram of the prior art and the utility model embodiment one.
Figure 12 is the schematic diagram of the non-preferred piezoelectric layer of c-axis in one embodiment of the utility model.
Figure 13 is the formation structural schematic diagram of the non-preferred piezoelectric layer of c-axis in one embodiment of the utility model.
In figure：101- second electrodes, 102- piezoelectric layers, 103- first electrodes, 104- air chambers, 105- substrates, the non-c of 106-
The preferred piezoelectric layer of axis, 107- active areas, 108- Bragg mirrors, 109- crystal orientation control layers, 110- back of the body chambers, 201- longitudinal waves,
202- lateral waves, the weak lateral wave of the preferred piezoelectric layer of the non-c-axis of 203-, the weak lateral wave of the preferred piezoelectric layer of 204-c axis.
Specific implementation mode
The utility model is described further with reference to specific example and attached drawing.
Embodiment one：
As shown in Fig. 2, the present embodiment provides a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis, including
Substrate 105, first electrode 103, piezoelectric layer 102 and the second electrode 101 set gradually from top to bottom, substrate 105 and the first electricity
Reflecting interface is equipped between pole 103, reflecting interface is air chamber 104 in the present embodiment.The wherein middle section position of piezoelectric layer 102
In active area 107, explicitly defining for active area 107 is：The region of first electrode, piezoelectric layer and second electrode overlapping, Er Qiechong
There is reflecting interface in folded region underground.Piezoelectric layer 102 includes the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the c
The preferred piezoelectric layer of axis is divided by the preferred piezoelectric layer of non-c-axis 106 for inside and outside two parts；Wherein it is located at the preferred piezoelectric layer quilt of c-axis of inside
The non-preferred piezoelectric layer 106 of c-axis surrounds, and positioned at the center of active area 107（It may not be center, it may be possible to deviate center,
As long as in active area effectively）.
In the present embodiment, the non-preferred piezoelectric layer 106 of c-axis is located at the inside of active area 107, and the preferred piezoelectric layer of non-c-axis 106
The coincident at edge and active area 107.The consistency of thickness of the thickness and the preferred piezoelectric layer of c-axis of the preferred piezoelectric layer of non-c-axis 106.
Wherein, the preferred piezoelectric layer of non-c-axis 106 can be SiO2Equal non-piezoelectric materials, or AlN, ZnO, PTZ, BST
Deng the piezoelectric material different from the preferred piezoelectricity layer material of c-axis, crystallization property is different, can also be has not in the same piezoelectric layer
The film of the identical piezoelectric material of syncrystallization characteristic.
When the preferred piezoelectric layer 106 of non-c-axis is non-piezoelectric material or, crystallization property different from the preferred piezoelectricity layer material of c-axis
Different piezoelectric materials, when preparation, after piezoelectric material deposition is completed, using photoetching in piezoelectric layer 102 specific region
Groove is formed, this recess region is the region of the preferred piezoelectric layer of non-c-axis 106, is deposited used in the preferred piezoelectric layer of non-c-axis 106
Non-piezoelectric material or piezoelectric material fill groove, after then removing extra material using chemically mechanical polishing, implement follow-up system
Make the processing step of bulk acoustic wave device.
When the preferred piezoelectric layer 106 of non-c-axis is the identical piezoelectric material for having different crystallization properties in the same piezoelectric layer
It is as shown in figure 13, special for controlling the crystallization that the preferred piezoelectric layer 106 of the non-c-axis is formed in growth by being arranged when film
Property crystal orientation control layer 109 so that the crystallization property of the preferred piezoelectric layer of non-c-axis 106 with the preferred piezoelectric layer crystallization property of c-axis not
Together, from rather than the c-axis of the preferred piezoelectric layer of c-axis 106 be oriented to c-axis and tilt, horizontally or vertically.
The crystal orientation control layer 109 can be by the 103 surface modification surface of first electrode contacted with piezoelectric layer 102
Roughness and formed, to when forming piezoelectric layer 102, the thin of two or more crystallization properties is formed in the same piezoelectric layer 102
Film, one of which crystallization property is as the preferred piezoelectric layer of c-axis, and others are as the preferred piezoelectric layer of non-c-axis 106；Finally in piezoelectricity
Second electrode 101 is deposited on layer 102.By first electrode 103 by taking Mo as an example, crystal orientation control layer 109 is the coarse surfaces Mo, piezoelectricity
Layer 102 is AlN films.The coarse surfaces Mo can allow the halfwidth of AlN（FWHM）Become larger, FWHM, which becomes larger, indicates that crystallization property changes
Become, which is the preferred AlN of non-c-axis.The non-preferred AlN of c-axis inhibits the cross that the preferred piezoelectric material of c-axis generates under electric field excitation
It resonates to wave, and then reduces the generation of spurious modes.
It is air chamber 104 by reflecting interface in this present embodiment, also has one layer of sacrificial layer, work in substrate in preparation process
The sacrificial layer can be released after the completion of skill, therefore in the preparation, the crystal orientation control layer 109 can also by with first electricity
The sacrificial layer surface that pole 103 contacts changes surface roughness and is formed, thus when forming first electrode 103, crystal orientation control layer
The first electrode 103 formed on 109 is noncrystalline preferred electrode layer, and the piezoelectric layer formed on noncrystalline preferred electrode layer is
The preferred piezoelectric layer of non-c-axis 106.
The crystal orientation control layer 109 can also be brilliant with first electrode 103 by being used in the first electrode 103
The unmatched metal of lattice is formed, to which when forming piezoelectric layer 102, it is special to form two or more crystallizations in the same piezoelectric layer 102
Property film, the piezoelectric layer 102 grown on first electrode 103 surface of the amorphous to control layer be the preferred piezoelectric layer of c-axis, in crystalline substance
The piezoelectric layer grown on control layer 109 is the preferred piezoelectric layer of non-c-axis 106.
Its operation principle is as shown in figure 12：Piezoelectric layer 102 in addition to formed in the range of thickness longitudinal wave 201 it
Outside, lateral lateral wave 202 can be also supervened, the purpose of this utility model is formed on the path that lateral wave 202 transmits
One absorbs wave energy region, i.e., the piezoelectric membrane crystallization property of the non-preferred piezoelectric layer 106 of c-axis, this region is preferred different from c-axis
Piezoelectric layer can decay because of the difference of material crystalline characteristic when lateral wave 202 is transmitted to non-c-axis preferred piezoelectric layer 106, inhibit
Lateral wave 202 resonates generated spurious modes, becomes the weak lateral wave 203 of the preferred piezoelectric layer of non-c-axis, the non-preferred piezoelectricity of c-axis
The weak lateral wave of layer 203, which returns to the preferred piezoelectric layer of c-axis, becomes weak lateral wave 204, and gradually decays.
The scattering parameter figure that traditional films bulk acoustic wave resonator shown in FIG. 1 is simulated is as shown in figure 9, and the present embodiment
Scattering parameter figure it is as shown in Figure 10, in order to more intuitively compare, Fig. 9 and Figure 10 are overlapped, as shown in figure 11, Tu11Zhong
L2 is the scattering curve of traditional films bulk acoustic wave resonator, and L1 is the scattering curve of the present embodiment, can from Fig. 9,10 and 11
Go out, the present embodiment is significantly reduced more than fs frequency field spurious resonances, i.e., in upper semi-circle region L1 obviously on the outside of L2, also
It is " Q circles " bigger, while is significantly reduced in the right side parasitism circle of circle diagram, shows that Q values also get a promotion.
Embodiment two：
The principle and structure and embodiment one of the present embodiment are essentially identical, the difference is that：As shown in figure 3, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is air chamber 104 in the present embodiment.Wherein the middle section of piezoelectric layer 102 is located at active area 107, piezoelectric layer 102
Including the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer of the c-axis is by the preferred piezoelectric layer of non-c-axis 106
It is divided into inside and outside two parts；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis 106, and positioned at active
The center in area 107.The non-preferred piezoelectric layer 106 of c-axis is located at the inside of active area 107, and the edge of the preferred piezoelectric layer of non-c-axis 106 with
The edge of active area 107 is misaligned.The cross-sectional width on one side of the preferred piezoelectric layer of non-c-axis 106 is less than 107 cross-sectional width of active area
Half, i.e., overall width be less than active area.
Embodiment three：
The principle and structure and embodiment one of the present embodiment are essentially identical, the difference is that：As shown in figure 4, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is air chamber 104 in the present embodiment.Wherein the middle section of piezoelectric layer 102 is located at active area 107, piezoelectric layer 102
Including the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer of the c-axis is by the preferred piezoelectric layer of non-c-axis 106
It is divided into inside and outside two parts；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis 106, and positioned at active
The center in area 107.For the non-preferred piezoelectric layer 106 of c-axis across the interior outside of active area 107, the non-c-axis being located in active area 107 is excellent
One side cross-sectional width of piezoelectric layer 106 is selected to be less than the half of 107 cross-sectional width of active area, i.e. overall width is less than active area.
In order to reduce the influence to active area performance, while ensureing energy leakage and the rejection ability of spurious resonance, c-axis is excellent
The part of piezoelectric layer is selected to be located in active area side, when the non-preferred piezoelectric layer 106 of c-axis is across the interior outside of active area 107, effect is most
It is good.The electric field energy at edge is had collected in active-surface lateral area, improves the utilization ratio of energy；It is excellent to reduce non-c-axis
Select influence of the piezoelectric layer 106 to 107 performance of active area；Ensure the rejection ability to energy leakage and spurious resonance.
Example IV：
The principle and structure and embodiment one of the present embodiment are essentially identical, the difference is that：As shown in figure 5, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is air chamber 104 in the present embodiment.Wherein the middle section of piezoelectric layer 102 is located at active area 107, piezoelectric layer 102
Including the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer of the c-axis is by the preferred piezoelectric layer of non-c-axis 106
It is divided into inside and outside two parts；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis 106, and positioned at active
The center in area 107.The non-preferred piezoelectric layer 106 of c-axis is located at the outside of active area 107, and the edge of the preferred piezoelectric layer of non-c-axis 106 with
The coincident of active area 107.
Embodiment five：
The principle and structure and embodiment one of the present embodiment are essentially identical, the difference is that：As shown in fig. 6, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is air chamber 104 in the present embodiment.Wherein the middle section of piezoelectric layer 102 is located at active area 107, piezoelectric layer 102
Including the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer of the c-axis is by the preferred piezoelectric layer of non-c-axis 106
It is divided into inside and outside two parts；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis 106, and positioned at active
The center in area 107.The non-preferred piezoelectric layer 106 of c-axis is located at the outside of active area 107, and the edge of the preferred piezoelectric layer of non-c-axis 106 with
The edge of active area 107 is misaligned.
Embodiment six：
The principle and structure and embodiment three of the present embodiment are essentially identical, the difference is that：As shown in fig. 7, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is the back of the body chamber 110 through substrate in the present embodiment.Wherein the middle section of piezoelectric layer 102 is located at active area 107, pressure
Electric layer 102 includes that the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer of the c-axis are preferably pressed by non-c-axis
Electric layer 106 is divided for inside and outside two parts；The preferred piezoelectric layer of c-axis for being wherein located inside is surrounded by the preferred piezoelectric layer of non-c-axis 106, and
Positioned at the center of active area 107.The non-preferred piezoelectric layer 106 of c-axis is located at across the interior outside of active area 107 in active area 107
The cross-sectional width on one side of the preferred piezoelectric layer of non-c-axis 106 is less than or equal to the half of 107 cross-sectional width of active area, i.e. overall width
Less than active area.
Embodiment seven：
The principle and structure and embodiment three of the present embodiment are essentially identical, the difference is that：As shown in figure 8, this reality
It applies example and a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis is provided, including the substrate set gradually from top to bottom
105, first electrode 103, piezoelectric layer 102 and second electrode 101 are equipped with reflecting interface between substrate 105 and first electrode 103,
Reflecting interface is the first acoustic impedance material and the Bragg mirror that the second acoustic impedance material alternate combinations are formed in the present embodiment
108, the acoustic impedance difference of the first acoustic impedance material and the second acoustic impedance material.Wherein the middle section of piezoelectric layer 102 is located at and has
Source region 107, piezoelectric layer 102 include the preferred piezoelectric layer of c-axis and the preferred piezoelectric layer 106 of non-c-axis, the preferred piezoelectric layer quilt of the c-axis
The preferred piezoelectric layer of non-c-axis 106 divides for inside and outside two parts；Wherein it is located at the preferred piezoelectric layer of c-axis of inside by the preferred piezoelectric layer of non-c-axis
106 surround, and positioned at the center of active area 107.The non-preferred piezoelectric layer 106 of c-axis is across the interior outside of active area 107, positioned at having
The cross-sectional width on one side of the preferred piezoelectric layer of non-c-axis in source region 107 106 is less than or equal to the one of 107 cross-sectional width of active area
Half, i.e. overall width is less than active area.
Above example is merely to illustrate the design philosophy and feature of the utility model, in the art its object is to make
Technical staff can understand the content of the utility model and implement according to this, and the scope of protection of the utility model is not limited to above-mentioned implementation
Example.So it is all according to equivalent variations or modification made by the revealed principle of the utility model, mentality of designing, in this practicality
Within novel protection domain.
Claims (11)
1. a kind of thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis, including set gradually from top to bottom substrate,
One electrode, piezoelectric layer and second electrode are equipped with reflecting interface between substrate and first electrode；The wherein middle section position of piezoelectric layer
In active area, piezoelectric layer includes the preferred piezoelectric layer of c-axis, it is characterised in that：Further include the preferred piezoelectricity of non-c-axis in the piezoelectric layer
Layer, part or all of the preferred piezoelectric layer of the c-axis are located at the inside of the preferred piezoelectric layer of non-c-axis；Wherein it is located at the c of inside
The preferred piezoelectric layer of axis is surrounded by the preferred piezoelectric layer of non-c-axis, and is located in active area.
2. the thin film bulk acoustic wave resonator according to claim 1 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The preferred piezoelectric layer of non-c-axis stated is located in active area side, active area outside or the side inside and outside active area.
3. the thin film bulk acoustic wave resonator according to claim 1 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The reflecting interface stated is air chamber, back of the body chamber or Bragg mirror.
4. the thin film bulk acoustic wave resonator according to claim 1 or 2 or 3 with the preferred piezoelectric layer of non-c-axis, feature exist
In：The preferred piezoelectric layer of non-c-axis uses non-piezoelectric material.
5. the thin film bulk acoustic wave resonator according to claim 4 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The non-piezoelectric material stated is SiO2。
6. the thin film bulk acoustic wave resonator according to claim 1 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The preferred piezoelectric layer of non-c-axis stated uses the piezoelectric material different from the preferred piezoelectric layer of c-axis, and crystallization property is also different；Non- c-axis is excellent
It selects the c-axis of piezoelectric layer to be oriented to c-axis to tilt, horizontally or vertically.
7. the thin film bulk acoustic wave resonator according to claim 1 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The preferred piezoelectric layer of non-c-axis stated is to have identical piezoelectric material, the not syncrystallization special in the same piezoelectric layer with the preferred piezoelectric layer of c-axis
The film of property；The c-axis of the non-preferred piezoelectric layer of c-axis is oriented to c-axis and tilts, horizontally or vertically；
This resonator further includes the crystal orientation control for controlling the crystallization property that the preferred piezoelectric layer of non-c-axis is formed in growth
Layer.
8. the thin film bulk acoustic wave resonator according to claim 7 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The crystal orientation control layer stated is formed by changing surface roughness in the first electrode surface contacted with piezoelectric layer.
9. the thin film bulk acoustic wave resonator according to claim 7 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The crystal orientation control layer stated is arranged between the first electrode and the preferred piezoelectric layer of non-c-axis, and crystal orientation control layer uses and first
The unmatched metal of electrode lattice.
10. the thin film bulk acoustic wave resonator according to claim 7 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The piezoelectric material stated is one kind in AlN, ZnO, PZT, BST.
11. the thin film bulk acoustic wave resonator according to claim 1 with the preferred piezoelectric layer of non-c-axis, it is characterised in that：Institute
The consistency of thickness of the thickness and the preferred piezoelectric layer of c-axis of the preferred piezoelectric layer of non-c-axis stated.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110120793A (en) * | 2018-02-05 | 2019-08-13 | 武汉衍熙微器件有限公司 | Thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis |
| WO2019185271A1 (en) * | 2018-03-29 | 2019-10-03 | RF360 Europe GmbH | Baw resonator, rf filter, multiplexer and method of manufacturing a baw resonator |
| CN111010108A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with recess and air wing structure, filter and electronic device |
| CN111010100A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with piezoelectric layer having recessed structure, filter, and electronic device |
| WO2020098481A1 (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Bulk acoustic wave resonator having rough surface, filter, and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120793A (en) * | 2018-02-05 | 2019-08-13 | 武汉衍熙微器件有限公司 | Thin film bulk acoustic wave resonator with the preferred piezoelectric layer of non-c-axis |
| WO2019185271A1 (en) * | 2018-03-29 | 2019-10-03 | RF360 Europe GmbH | Baw resonator, rf filter, multiplexer and method of manufacturing a baw resonator |
| CN111937303A (en) * | 2018-03-29 | 2020-11-13 | Rf360欧洲有限责任公司 | BAW resonator, RF filter, multiplexer, and method of manufacturing BAW resonator |
| US11482985B2 (en) | 2018-03-29 | 2022-10-25 | RF360 Europe GmbH | BAW resonator, RF filter, multiplexer and method of manufacturing a BAW resonator |
| WO2020098481A1 (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Bulk acoustic wave resonator having rough surface, filter, and electronic device |
| CN111010108A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with recess and air wing structure, filter and electronic device |
| CN111010100A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with piezoelectric layer having recessed structure, filter, and electronic device |
| WO2020177554A1 (en) * | 2019-03-02 | 2020-09-10 | 天津大学 | Bulk acoustic resonator having recessed structure in piezoelectric layer, filter and electronic device |
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