CN207896085U - Multiple concatenated fairings of diode chip for backlight unit - Google Patents
Multiple concatenated fairings of diode chip for backlight unit Download PDFInfo
- Publication number
- CN207896085U CN207896085U CN201820118584.6U CN201820118584U CN207896085U CN 207896085 U CN207896085 U CN 207896085U CN 201820118584 U CN201820118584 U CN 201820118584U CN 207896085 U CN207896085 U CN 207896085U
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- Prior art keywords
- diode chip
- backlight unit
- electrode
- load
- fairings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The utility model provides a kind of multiple concatenated fairings of diode chip for backlight unit, including：Lead frame quantity is N number of load crystalline substance plate being isolated from each other and electrode pin group, and includes N+1 branch pins in electrode pin group, and the 1st to N branch pins is respectively and electrically connected to the 1st to the brilliant plate of N number of load, and N+1 branch pins are separately provided；N number of diode chip for backlight unit is set on lead frame, and it is connected respectively with the brilliant plate of N number of load by first electrode, the second electrode of 1st to N 1 diode chip for backlight unit is electrically connected in the 2nd to the brilliant plate of N number of load, the second electrode of n-th diode chip for backlight unit is electrically connected to N+1 branch pins, when when automation equipment is produced in the way of die bond and solidus, it can take the adjacent diode chip for backlight unit with identical proof voltage specification on wafer at the device of same module encapsulation and be connected and increase reversed pressure resistance, and reach automated production, qualification rate is high, low cost and the effectiveness for improving homogeneity of product and reliability.
Description
Technical field
The utility model provides a kind of multiple concatenated fairings of diode chip for backlight unit, and espespecially N number of load of lead frame is brilliant
Plate is to be respectively arranged with diode chip for backlight unit, and produced with N number of diode chip for backlight unit of connecting in the way of automation die bond and solidus
Increase reversed pressure resistance, and then reach the high and low cost of qualification rate, and improves the effectiveness of homogeneity of product and reliability.
Background technology
It is designed, in the field of packaging and testing in power semiconductor now, the encapsulation of single device and parallel operation
Device development is ripe and relatively conventional, but connects to use and be limited to lack practicality, automated production, low cost and high reliability
Component solution, therefore be not common in Tandem devices and practical relevant utilization, wherein parallel operation is electric current addition,
It is then that pressure resistance is added, but under conditions of equal-wattage, operating current can be reduced by improving operating voltage, and then be reached that series connection, which is used,
Energy-efficient and high power density demand can reduce current value, Jin Erke because under identical power after improving voltage value
It reduces end product and uses the current specification of device, and promote the power density of end product, can also reduce cost.
And there are three ways to traditional series voltage device series connection, the first is using the single of same proof voltage specification
Packaging system carries out the series connection of multiple quantity, please refers to embodiment as shown in Figure 5, can not guarantee to take to 2 to N number of
Electric characteristics closest diode chip for backlight unit A carries out Series Package, to cause consistency and reliability poor, and because of encapsulation
For device for 2 to N number of series connection, what is not only encapsulated is of high cost, and keeps volume relatively bulky and occupy much room；Be for second by
2 are first welded to the Silicon Wafers of N piece diodes, are then cut into required current specification or size etc., can be in anode
After carrying out welding conductive lead wire with two end of cathode, then the processing procedure of acid etching, encapsulated protection post package are carried out into a high voltage rectifier stack；And
The third then embodiment as shown in Figure 6, take 2 carry out welding storehouse to N number of diode chip for backlight unit A after, can be at the 1st
Welding conductive lead wire A1, which is carried out, with bis- Dragon Boat Festival poles the last one diode chip for backlight unit A and cathode is packaged into high voltage serial module structure, this
Kind can not only guarantee to take carries out Series Package to 2 to the closest diode chip for backlight unit A of N number of electric characteristics, unanimously
Property and reliability it is poor, and it is more difficult make to produce in an automated fashion, cause process relatively complicated, and conductive lead wire A1 welding
After can only test N number of concatenated electric characteristics of diode chip for backlight unit A, the electrical characteristic of single diode chip for backlight unit A can not be tested, and
The voltage's distribiuting situation of reality of work, it is difficult to ensure homogeneity of product and reliability are as engaged in the industry personnel and wanted
Study improved key point.
Utility model content
Novel inventor in view of above-mentioned problem of the prior art and missing, collect related data via multi-party assessment and
Consider, and constantly study and change using the experience of research and development for many years for engaging in the industry, just there are such multiple diode chip for backlight unit
The concatenated novel birth of fairing.
The main purpose of the utility model is that multiple concatenated fairings of diode chip for backlight unit, including：Lead frame number
Amount is N number of load crystalline substance plate being isolated from each other and electrode pin group, and includes N+1 branch pins in electrode pin group, and the 1st to N
Branch pin is respectively and electrically connected to the 1st and carries brilliant plate to n-th, and N+1 branch pins are separately provided；N number of diode chip for backlight unit setting
It is connected respectively with the brilliant plate of N number of load on lead frame and by the first electrode at the back side, the 1st to the N-1 diode
The second electrode of chip front side, which is electrically connected, carries brilliant plate, the second electrode of n-th diode chip for backlight unit in the 2nd to n-th
It is electrically connected to N+1 branch pins；Insulation protection outer layer is arranged on the lead frames and covers N number of diode chip for backlight unit, and electrode
Pin set exposes to insulation protection outer layer, when automation equipment is produced in the way of die bond and solidus, in same module
The device of encapsulation can take the adjacent diode chip for backlight unit with identical proof voltage specification on wafer and be connected to increase instead
To pressure resistance, and reach automated production, the high and low cost of qualification rate and the effectiveness for improving homogeneity of product and reliability.
The secondary objective of the utility model is that N number of load crystalline substance plate frontal projected area of lead frame is identical, can make each
The brilliant plate of a load can tend to consistent to the thermal diffusivity of diode chip for backlight unit, to avoid the difference that electrical characteristic is generated by temperature difference,
And recess portion and the protrusion of complementary shape are respectively equipped at each two adjacent brilliant plate relative inners of load, so that the brilliant plate formation of N number of load interlocks
Structure, the device physical stress intensity of hoisting module encapsulation, and the connection of materials and parts lateral connection at electrode pin group can be passed through
The brilliant plate connection of N number of load is isolated from each other by piece has a spacing, overall structure not to be scattered, and can also facilitate automation die bond and solidus life
High voltage serial module structure is cut into an other individual by production after the molding of insulation protection outer layer plastic packaging, then by cutting mould；
In addition, locking hole is offered on insulation protection outer layer, for the device that multiple modules encapsulate to be fixed on it after being passed through for fastener
On his object (such as radiator or circuit board), to reduce the temperature of actual use, reliability is promoted.
The another object of the utility model be the electrode pin group the 1st of lead frame, N+1 branch pin respectively as
Cathode and anode, the 2nd to N branch pin is tested N respectively as test foot position, and using the 1st pin and N+1 branch pins
A diode chip for backlight unit always concatenated pressure voltage and electrical characteristic, and each group of each two adjacent leads in the 2nd to N branch pins
Each pressure voltage and electrical characteristic for corresponding to concatenated diode chip for backlight unit, and actual voltage point when work can distinctly be tested
Cloth situation keeps product reliability splendid.
A further object of the utility model is silicon carbide (SiC) Xiao when diode chip for backlight unit uses pressure voltage as 1000V
When special based diode, can with the utility model fairing on same wafer using automation die bond take adjacent 10
A chip with identical proof voltage specification is connected, and after series connection can be equal to Voltage Series and formed reversed pressure resistance and reach
The high-pressure resistant silicon carbide Schottky diode serial module structure of 10000V can thereby break through existing single package diode chip for backlight unit pressure resistance
The limit of value, in the power circuit applied to more high working voltage, and the most because of 10 neighboring diode chip electrical characteristics
Consistency, so under the situation of practical application, voltage's distribiuting situation is closest when work, makes homogeneity of product and reliable
Property is splendid.
Description of the drawings
Fig. 1 is the structural schematic diagram of the preferred embodiment in the utility model.
Fig. 2 is the schematic diagram of another preferred embodiment lead frame arrangement of the utility model.
Fig. 3 is that the utility model further embodiment lead frame is connect with diode chip for backlight unit outside the solid for completing plastic packaging
See figure.
Fig. 4 is the three-dimensional appearance for the pin that the utility model another preferred embodiment lead frame structure cuts part
Figure.
Fig. 5 is the equivalent circuit diagram of existing multiple Diode series.
Fig. 6 is the action schematic diagram of the existing multiple diodes of series connection.
【Symbol description】
1, lead frame
10, materials and parts
101, connection sheet
11, brilliant plate is carried
111, recess portion
112, protrusion
12, electrode pin group
121, pin
2, diode chip for backlight unit
21, first electrode
22, second electrode
23, lead
3, insulation protection outer layer
31, locking hole
A, diode chip for backlight unit
A1, conductive lead wire
L1, the 1st pin
L2, the 2nd pin
L3, the 3rd pin
L4, the 4th pin
LN, N branch pins
LN+1, N+1 branch pins
Specific implementation mode
To reach above-mentioned purpose and effect, technological means and its construction used by the utility model, now draw with regard to this reality
With novel preferred embodiment elaborate, its construction is as follows with function, in favor of understanding completely.
It please refers to Fig.1, shown in 2,3,4, respectively the structural schematic diagram of the preferred embodiment in the utility model, another preferred reality
It applies schematic diagram, a further embodiment lead frame for lead frame arrangement and connect the three-dimensional appearance for completing plastic packaging with diode
Figure and another preferred embodiment lead frame structure cut the stereo appearance figure of the pin of part, it can be clearly seen from the figure that,
The concatenated fairing of multiple diode chip for backlight unit of the utility model be include lead frame 1, N number of diode chip for backlight unit 2 and absolutely
Edge protects outer layer 3, wherein：
The lead frame 1 is conductive material and includes to be isolated from each other to have the N number of load crystalline substance plate 11 and electrode pin group of a spacing
12, the wherein quantity of N at least can be 2, i.e. the quantity of N is more than or equal to 2, and electrode pin group 12 includes N+1 branch pins
121, the 1st carries the N branch for directly extending or being electrically connected respectively on brilliant plate 11 by the 1st to n-th to N branch pin 121 and draws
Foot 121, and N+1 branch pin 121 is separately provided, and to be materials and parts 10 mold the brilliant plate of N number of load to lead frame 1 using processing method
11, and the connection sheet 101 with lateral connection at the N+1 branch pin 121 of electrode pin group 12, and connection sheet 101 can be passed through
N number of load crystalline substance plate 11 is linked together to be isolated from each other and has a spacing.
The diode chip for backlight unit 2 is including but not limited to Schottky diode chip, the silicon carbide (SiC) with silicon (Si) for substrate
Schottky diode chip, fast recovery diode chip, general P-N junction diode chip for backlight unit, Zener diode chip, gallium nitride
(GAN) diode chip for backlight unit, GaAs (GAAS) diode chip for backlight unit or other diode chip for backlight unit, and the first electrode 21 with the back side
And the second electrode 22 that front deviates from first electrode 21, and N number of diode chip for backlight unit 2 is set on lead frame 1 by first
Electrode 21 is connected with N number of load crystalline substance plate 11 respectively, and by the 1st to the N-1 diode chip for backlight unit 2 second electrode 22 by drawing
Line 23, which is electrically connected, carries brilliant plate 11 in the 2nd to n-th, and the second electrode 22 of n-th diode chip for backlight unit 2 passes through lead
23 are electrically connected to the N+1 branch pin 121 that electrode pin group 12 is separately provided.
In the present embodiment, the first electrode 21 at each 2 back side of diode chip for backlight unit is N-type semiconductor using as two
The cathode of pole pipe, and positive second electrode 22 is P-type semiconductor using the anode as diode, and in other embodiment
In can also be the back side first electrode 21 be anode, positive second electrode 22 be cathode.
The insulation protection outer layer 3 is by epoxy resin or other integrally moulded load crystalline substance plates being arranged in lead frame 1
On 11 and it is covered in N number of diode chip for backlight unit 2, it is possible to understand that, lead frame 1 also can further include outer in other embodiments
The cooling fin of dew can preferably radiate to diode chip for backlight unit 2 without being covered by insulation protection outer layer 3, can also adopt
With the back for such as carrying brilliant plate 11, or in addition to the exposed part-structure of electrode pin group 12 is not wrapped by insulation protection outer layer 3
It covers, so as to directly radiate with contacting external air.
When the utility model utilizes automation equipment with the side of die bond (Die BoNdiNg) and solidus (Wire BoNdiNg)
When formula produces, being taken respectively from the N number of diode chip for backlight unit of fairing 2 of same module encapsulation adjacent on wafer has phase
Chip with proof voltage specification is connected, pressure voltage and electrical characteristic the consistency highest to be closest, to using connecting
For the characteristic application of cumulative proof voltage, the fairing reliability of such high voltage serial module structure encapsulation is highest, and because N number of
Diode chip for backlight unit 2 is connected by the brilliant plate of identical first electrode 21 and N number of load 11, i.e., be all P-type semiconductor upwards or N-type half
Conductor is upward, therefore is just not required to overturn chip when packaged, after the plastic packaging molding of insulation protection outer layer 3 to be done, then
By cutting mould cut and form an other individual, and then reaches automated production, the high and low cost of qualification rate and production can be improved
The effectiveness of product consistency and reliability.
As shown in Fig. 2, it is identical that lead frame 1N in the present embodiment, which carries 11 frontal projected area of brilliant plate, can make each
The brilliant plate 11 of a load can all tend to consistent to the thermal diffusivity of diode chip for backlight unit 2, temperature when working to avoid each diode chip for backlight unit 2
Spend it is inconsistent cause its electrical characteristic because of difference caused by temperature difference, and in the brilliant plate 11 relative inners punishment of each two adjacent loads
Not She You complementary shape recess portion 111 and protrusion 112, the brilliant plate of such N number of loads 11 recess portion 111 and the formation of protrusion 112 can be utilized to interlock
Structure, and the fairing physical stress intensity of high voltage serial module structure encapsulation is promoted, and can be by materials and parts 10 by multiple modules
The device of encapsulation is connected in the same connection sheet 101, and overall structure is not scattered, and can also facilitate automated production, makes N number of independence
The brilliant plate of load 11 between pitch keep identical, and offered outside at least one leadthrough frame 1 on 3 surface of insulation protection outer layer
Part locking hole 31, for the device that multiple modules encapsulate to be fixed on after passing through locking hole 31 for fastener (such as screw)
On other objects (such as radiator or circuit board), to reduce the temperature of actual use, reliability is promoted.
In the present embodiment, the electrode pin group 12 of lead frame 1 includes N+1 branch pin 121, wherein the 1st to N branch
Pin 121 is respectively and electrically connected to the brilliant plate 11 of N number of load, and is divided by the 1st to the N-1 diode chip for backlight unit 2 second electrode 22
It is not electrically connected at the 2nd to the brilliant plate 11 of n-th load, and the second electrode 22 of n-th diode chip for backlight unit 2 is electrically connected to individually
The N+1 branch pin 121 being arranged, thus the 1st, N+1 branch pin 121 respectively as fairing cathode and anode, the 2nd
Zhi Zhi N branch pin 121 is respectively test pole, such as the conduct of the 1st pin (L1) 121 and N+1 branch pin (LN+1) 121 is whole
Flow the test foot position of the total series connection electric characteristics of N number of diode chip for backlight unit 2 of device, the 1st pin (L1) 121 and the 2nd pin
(L2) 121 first group of test foot position as the 1st 2 electric characteristics of diode chip for backlight unit, the 2nd pin (L2) 121 are drawn with the 3rd
Second group test foot position of the foot (L3) 121 as the 2nd 2 electric characteristics of diode chip for backlight unit, the 3rd pin (L3) 121 and the 4th
Third group test foot position of the pin (L4) 121 as the 3rd 2 electric characteristics of diode chip for backlight unit, thus can analogize, N branch pins
(LN) 121 and the N groups test foot position as 2 electric characteristics of n-th diode chip for backlight unit of N+1 branch pin (LN+1) 121, i.e.,
Each group of each two adjacent leads 121 (L1 and L2, L2 and L3, L3 and L4~LN and LN+1) is respectively as corresponding diode chip for backlight unit
The test foot position of 2 electric characteristics can test pressure voltage and electrical characteristic after the always series connection of N number of diode chip for backlight unit 2, or can
The pressure voltage and electrical characteristic of each concatenated diode chip for backlight unit 2, and reality when work are distinctly tested according to processing procedure or demand
Voltage's distribiuting situation, keep product reliability splendid.
It should be noted that the 2nd of electrode pin group 12 to N branch pin 121 be test pin, if it is known not
In the case of needing test pin, also according to actual demand or design for change can be applied, such as be originally designed as 5 diode cores
6 121 structures of pin of the collocation of piece 2, which cut the 2nd to the 5th pin 121, becomes 2 121 structures of pin, is only retained as
The 1st and last branch pin 121 of cathode and anode, and in production process, the 2nd can be also cut off to N branch pin 121
The structure of 3 part of insulation protection outer layer is exposed to, a bit of test pole is only retained, facilitate following process or is installed on circuit board
Upper use, so all being illustrated together in following description content, Chen Ming is given in conjunction.
As described above, when diode chip for backlight unit 2 uses pressure voltage as silicon carbide (SiC) Schottky diode of 1000V, it can
It is adjacent in being taken using automation die bond on same wafer with the concatenated fairing of the multiple diode chip for backlight unit of the utility model
10 chips with identical proof voltage specification are connected, and after series connection can be equal to Voltage Series and formed reversed pressure resistance and reach
To the high-pressure resistant silicon carbide Schottky diode serial module structure of 10000V, it is resistance to can thereby to break through existing single package diode chip for backlight unit
The limit of pressure value improves voltage in the power circuit applied to more high working voltage, and under the identical power of power circuit
After value, you can current value is reduced, and because of the pressure voltage and electrical characteristic consistency the most of 10 neighboring diode chips 2, so
Under the situation of practical application, actual voltage's distribiuting situation is closest when work, and is produced in the way of automation,
Keep homogeneity of product and reliability splendid.
Therefore, the utility model includes N number of load crystalline substance plate 11 being isolated from each other mainly for lead frame 1, and is drawn in electrode
The 1st of foot group 12 is respectively and electrically connected to the 1st to N branch pin 121 and carries brilliant plate 11 to n-th, and on lead frame 1 then
It is provided with N number of diode chip for backlight unit 2 and is connected respectively with N number of load crystalline substance plate 11 by back side first electrode 21, the 1st to N-
The positive second electrode of 1 diode chip for backlight unit 2 121 is electrically connected in the 2nd to N number of loads crystalline substance plate 11, and n-th diode chip for backlight unit
2 second electrode 121 is electrically connected to N+1 branch pin 121, and the N number of diode chip for backlight unit of covering is provided on lead frame 1
2 insulation protection outer layer 3, when automation equipment is produced in the way of die bond and solidus, in the dress of same module encapsulation
The adjacent diode chip for backlight unit 2 with identical proof voltage specification on wafer can be taken by, which setting, is connected to increase reversed pressure resistance,
And then reach automated production, the high and low cost of qualification rate and the effectiveness that homogeneity of product and reliability can be improved.
Above-mentioned detailed description is to illustrate that the embodiment is not for a kind of preferred possible embodiments of the utility model
To limit the claims of the utility model, it is all other without departing under the revealed skill spirit of the utility model
The equivalent changes and modifications change completed, is intended to be limited solely by the claims that the utility model is covered.
Claims (10)
1. a kind of concatenated fairing of multiple diode chip for backlight unit, including：
Lead frame, for conductive material and include the N number of load crystalline substance plate being isolated from each other and electrode pin group, the wherein quantity of N at least
It is 2, and electrode pin group includes N+1 branch pins, the 1st to N branch pins is respectively and electrically connected to the 1st to n-th load crystalline substance
Plate, N+1 branch pins are separately provided；
N number of diode chip for backlight unit, and it is respectively provided with first electrode and second electrode in the back side of diode chip for backlight unit and front, and it is N number of
Diode chip for backlight unit is set on lead frame and is connected respectively with the brilliant plate of N number of load by first electrode, the 1st to N-1
The second electrode of a diode chip for backlight unit is electrically connected and carries brilliant plate in the 2nd to n-th, and the of n-th diode chip for backlight unit
Two electrodes are electrically connected to N+1 branch pins；And
Insulation protection outer layer is arranged on the lead frames and covers N number of diode chip for backlight unit, and electrode pin group exposes to insulation and protects
Protect outer layer.
2. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, wherein N number of load crystalline substance plate of the lead frame
Frontal projected area is identical.
3. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, the wherein lead frame are adjacent in each two
The brilliant plate relative inner of load at be recess portion and the protrusion for being respectively equipped with complementary shape, for the brilliant plate formation cross structure of N number of loads.
4. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, the wherein electrode pin of the lead frame
It is the connection sheet with materials and parts lateral connection at group, has a spacing for the brilliant plate connection of N number of load to be isolated from each other, and with automation
Die bond and solidus mode produce, and after the molding of insulation protection outer layer plastic packaging, then cut into an other individual by cutting mould.
5. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, wherein the first electricity of the diode chip for backlight unit
Pole is respectively the cathode and an anode of diode with second electrode, and is led to by the 1st to the N-1 diode chip for backlight unit second electrode
It crosses lead to be electrically connected in the 2nd to the brilliant plate of n-th load, the second electrode of n-th diode chip for backlight unit is electrical by lead
It is connected to the N+1 branch pins of electrode pin group.
6. multiple concatenated fairings of diode chip for backlight unit as claimed in claim 5, the wherein diode chip for backlight unit is to be with silicon
Schottky diode chip, SiC schottky diode chip or fast recovery diode chip, the P-N junction diode core of substrate
Piece, Zener diode chip, gallium nitride diode chip or gallium arsenide diode chip.
7. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, the wherein diode chip for backlight unit are derived from a piece of
The adjacent chip with identical proof voltage specification on wafer.
8. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, the wherein electrode pin of the lead frame
The 1st of group, N+1 branch pin respectively as cathode and anode, and the 2nd to N branch pin respectively as test foot position.
9. multiple concatenated fairings of diode chip for backlight unit as claimed in claim 8, wherein the 1st of the electrode pin group is drawn
Foot is always connected with N+1 branch pin as N number of diode chip for backlight unit the test foot positions of electric characteristics, each group of each two adjacent leads point
Not as the test foot position of corresponding diode chip for backlight unit electric characteristics.
10. multiple concatenated fairings of diode chip for backlight unit as described in claim 1, wherein on the insulation protection superficies
To offer at least one locking hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820118584.6U CN207896085U (en) | 2018-01-24 | 2018-01-24 | Multiple concatenated fairings of diode chip for backlight unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820118584.6U CN207896085U (en) | 2018-01-24 | 2018-01-24 | Multiple concatenated fairings of diode chip for backlight unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207896085U true CN207896085U (en) | 2018-09-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071086A (en) * | 2018-01-24 | 2019-07-30 | 矽莱克电子股份有限公司 | Multiple concatenated fairings of diode chip for backlight unit |
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2018
- 2018-01-24 CN CN201820118584.6U patent/CN207896085U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071086A (en) * | 2018-01-24 | 2019-07-30 | 矽莱克电子股份有限公司 | Multiple concatenated fairings of diode chip for backlight unit |
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