CN207851349U - It is a kind of that there is the silicon substrate V-groove assembled and select inclined function - Google Patents
It is a kind of that there is the silicon substrate V-groove assembled and select inclined function Download PDFInfo
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- CN207851349U CN207851349U CN201721685537.1U CN201721685537U CN207851349U CN 207851349 U CN207851349 U CN 207851349U CN 201721685537 U CN201721685537 U CN 201721685537U CN 207851349 U CN207851349 U CN 207851349U
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Abstract
The utility model belongs to data communication, active optical cable technical field, and in particular to a kind of to have the silicon substrate V-groove assembled and select inclined function.It is a kind of that there is the silicon substrate V-groove assembled and select inclined function, micro-reflector is set on a medial surface of silicon substrate V-groove, micro-reflector minute surface is upward, etched diffraction grating above micro-reflector minute surface, and the grating is sub-wave length grating.The utility model has the beneficial effects that：It solves vertical cavity laser arrays and single mode optical fiber array coupled problem, especially long haul communication to use, the coupling of 1550/1310nm VCSELs and fiber array.
Description
Technical field
The utility model belongs to data communication, active optical cable technical field, and in particular to one kind, which has, to be assembled and select inclined work(
The silicon substrate V-groove of energy.
Background technology
Optical transceiver module is the core devices of optical communication, completes the optical-electronic to optical signal/electrical-optical and converts.By two parts group
At：Receiving portion and emitting portion.Receiving portion realizes that digitizing method, emitting portion realize electricity-light transformation.In optical module
It is exactly the transmission range of optical module to have a very important index in, and the transmission range of optical module is divided into short distance, middle-range
With long away from three kinds.It is generally acknowledged that 2km and it is below be short distance, 10~20km is middle distance, and 30km, 40km or more are
Over long distances.
The transmission range of optical module is restricted, and is primarily due to have certain loss when optical signal transmits in a fiber
And dispersion.When loss is that light transmits in a fiber, light energy losses caused by the absorption scattering and leakage due to medium, this portion
Divide energy as the increase of transmission range is with certain ratio dissipation.The generation of dispersion is primarily due to the electromagnetic wave of different wave length
In same Propagation, speed differs, to cause the different wave length ingredient of optical signal due to the accumulation of transmission range and
The different time reaches receiving terminal, causes pulse to broaden, and then can not resoluting signal value.So during making optical module
The dispersion of light in a fiber is reduced, the coupling efficiency for improving laser and optical fiber is most important.
In the VCSEL and Single-Mode Fiber Coupling of long distance transmission such as 1.3um, since single mode optical fiber core diameter is only 9um,
And after the angle of divergence is propagated in addition, light is much larger than with spot diameter when fiber coupling near 9um for the oxidation limiting aperture of VCSEL
Fibre core diameter, the waste of luminous power when causing to couple, therefore contraction hot spot is most important to promoting coupling efficiency in coupling；This
Outside, the laser dispersion of high polarization state is lower when light is propagated in a fiber, can transmit farther distance.
Invention content
It assembles the purpose of this utility model is that providing and having for problems of the prior art and selects inclined function
Silicon substrate V-type realizes polarization and the convergence of light, which promotes coupling efficiency and realize the light of high polarization state so as to it
What dispersion smaller was propagated when transmitting in a fiber is farther.
The technical solution of the utility model is：
It is a kind of that there is the silicon substrate V-groove assembled and select inclined function, micro- reflection is set on a medial surface of silicon substrate V-groove
Mirror, micro-reflector minute surface is upward, etched diffraction grating above micro-reflector minute surface, and the grating is sub-wave length grating.
Specifically, micro-reflector and silicon substrate V-groove bottom surface be in 45° angle.
Specifically, etching depth of the grating on micro-reflector is 180nm.
The utility model has the beneficial effects that：Solve vertical cavity laser arrays and single mode optical fiber array coupled problem,
Especially long haul communication is used, the coupling of 1550/1310nm VCSELs and fiber array, on the speculum of silicon substrate V-groove
Silicon substrate sub-wave length grating is etched, for the laser beam of nearly circularly polarized light, sub-wave length grating has very strong reflection to TM polarised lights
And have very strong transmission to TE polarised lights, it can be obtained in the micro-reflector by being etched with silicon sub-wave length grating relatively high
Polarised light using the polarization step response of light, while can reduce light and be lost caused by dispersion in a fiber；It is in wavelength
When 1.3um, the refractive index of Si is 3.47, SiO2Refractive index is 1.44, thus plants the sub-wavelength of the material preparation of high index-contrast
The convergence of light beam may be implemented in grating, effectively increases coupling efficiency.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model V-groove；
Fig. 2 is the cross-sectional view for the one side that V-groove has speculum.
1 silicon substrate, 2 micro-reflectors, 3 gratings.
Specific implementation mode
It is as shown in Figure 1 a kind of silicon substrate V-groove that there is convergence and select inclined function, on a medial surface of silicon substrate V-groove
Micro-reflector 2 is set, and 2 minute surface of micro-reflector is upward, and sub-wave length grating 3 is etched above 2 minute surface of micro-reflector.Micro-reflector
2 with silicon substrate V-groove bottom surface be in 45° angle.Etching depth of the grating 3 on micro-reflector 2 is 180nm.
The making step of the silicon substrate V-groove used in the present invention is as follows：Silicon chip is chosen first, to the silicon chip of selection
Acetone, ethyl alcohol-ultrasound wave cleaning are carried out, deionized water is rinsed, nitrogen drying；Then the silicon chip of processing is moved into thermal oxidation furnace
Wet-oxygen oxidation is carried out, thermal annealing in thermal annealing stove is moved into after the completion of oxidation；Furthermore it is to carry out photoetching, development treatment；4th is to make
It is dried up with nitrogen, it is rear to immerse in HF aqueous solutions, prepare SiO2Mask；KOH water finally will be immersed by silicon chip processed above
Solution carries out wet method silicon etching, prepares the silicon substrate 1 with 45 ° of micro-reflectors.The ratio of used KOH aqueous solutions is KOH：
IPA： H2O=2:1:10
It carries out ICP etchings on 45 ° of mirror surfaces of the silicon substrate V-groove prepared and prepares the process of grating to include following step
Suddenly：
One, by the silicon substrate 1V type grooves with 45 ° of micro-reflectors prepared carry out deionized water flushing successively, nitrogen is blown
Dry, immigration thermal oxidation furnace carries out wet-oxygen oxidation, and rapid thermal annealing is carried out after the completion of to be oxidized；The temperature of the thermal oxidation furnace used is
1200 DEG C, under the conditions of rich water steam, time 20min, rapid thermal annealing carries out under a nitrogen atmosphere, is rapidly heated to 1200
DEG C, annealing time at least 80s；
Two, to carrying out photoetching, development by the processed silicon substrate V-groove of above-mentioned steps；The photoresist used is ZEP520,
The photoresist spinner rotating speed 3000 used is 30s by photoresist spinner processing time；105 DEG C of front baking, 10min, use ultraviolet exposure machine
Exposure, time for exposure 4s, developing time 28s are rear to dry 120 DEG C after the completion of development, post bake 20min；
Three, nitrogen drying is carried out to the silicon substrate V-groove that upper step process is crossed, then SiO2 is carried out using diluted HF
Corrosion, to serve as the mask of the 4th step Si；The proportioning of the diluted HF aqueous solutions used is HF：(NH4)F：H2O=3:6:
10；
Four, it completes dry etching using ICP to perform etching silicon using plasma etcher, removes remaining SiO2；Silicon
Screen periods are 620nm during performing etching, duty ratio 0.5, grating groove depth are 180nm；Silicon etching reaction gas
It is selected as SF6, flow 50mL/min；The chamber pressure 7mTorr of plasma etching, the source power of plasma etching machine
Radio-frequency power for 1000W, radio frequency source is 300W；Silicon etching reaction gas SF6Time is 7.4s；It is to etching shape after etching
At perforated wall protected, pre-deposition and deposition reaction gas C4F8Time total 3s.
When rotatory polarization is through the silicon grating provided by the utility model having on the silicon substrate V-groove assembled and select inclined function
Afterwards, the light that laser is sent out has two kinds of TE patterns and TM patterns and vertical, when it passes through silicon grating, with leading to for parallel gratings
It crosses, and will decay vertically, relatively high polarised light is selected to be formed, is finally coupled into optical fiber
Finally it should be noted that:Above example is only to illustrate the technical solution of the utility model rather than limits it
System；Although the utility model is described in detail with reference to preferred embodiment, those of ordinary skill in the art should
Understand：It can still modify to specific embodiment of the present utility model or some technical characteristics are equally replaced
It changes；Without departing from the spirit of technical solutions of the utility model, should all cover in the claimed technical solution of the utility model
In range.
Claims (3)
1. a kind of having the silicon substrate V-groove assembled and select inclined function, which is characterized in that set on a medial surface of silicon substrate V-groove
Micro-reflector (2) is set, micro-reflector (2) minute surface is upward, etched diffraction grating (3), the grating above micro-reflector (2) minute surface
(3) it is sub-wave length grating.
2. having the silicon substrate V-groove assembled and select inclined function according to claim 1, which is characterized in that micro- reflection
Mirror (2) is in 45° angle with silicon substrate V-groove bottom surface.
3. having the silicon substrate V-groove assembled and select inclined function according to claim 1, which is characterized in that the grating (3)
Etching depth on micro-reflector (2) is 180nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721685537.1U CN207851349U (en) | 2017-12-07 | 2017-12-07 | It is a kind of that there is the silicon substrate V-groove assembled and select inclined function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721685537.1U CN207851349U (en) | 2017-12-07 | 2017-12-07 | It is a kind of that there is the silicon substrate V-groove assembled and select inclined function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207851349U true CN207851349U (en) | 2018-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721685537.1U Active CN207851349U (en) | 2017-12-07 | 2017-12-07 | It is a kind of that there is the silicon substrate V-groove assembled and select inclined function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109507775A (en) * | 2018-12-18 | 2019-03-22 | 濮阳光电产业技术研究院 | Silica-based optical fibers fixing groove and preparation method thereof of the active optical cable with balzed grating, |
-
2017
- 2017-12-07 CN CN201721685537.1U patent/CN207851349U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109507775A (en) * | 2018-12-18 | 2019-03-22 | 濮阳光电产业技术研究院 | Silica-based optical fibers fixing groove and preparation method thereof of the active optical cable with balzed grating, |
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