CN105278042A - Preparation method of silicon-based V-shaped groove equipped with micro reflector - Google Patents
Preparation method of silicon-based V-shaped groove equipped with micro reflector Download PDFInfo
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- CN105278042A CN105278042A CN201410347308.3A CN201410347308A CN105278042A CN 105278042 A CN105278042 A CN 105278042A CN 201410347308 A CN201410347308 A CN 201410347308A CN 105278042 A CN105278042 A CN 105278042A
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- reflector
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Abstract
The invention relates to a preparation method of a silicon-based V-shaped groove equipped with a micro reflector. The method comprises steps of: according to an anisotropic characteristic of the silicon in KOH etching liquid, performing simulation by using Anisotropic crystalline etching simulation (ACES) software to find out specific etching crystal orientation generating a V-shaped groove and the micro reflector; performing silicon etching in which a practical mask is determined according to the selection ratios of Si and SiO2 in the KOH etching liquid and the coefficients of thermal expansion of the Si and the SiO2, and the V-shaped groove and the 45-degree micro reflector are etched through the adjustment of the ratio of the KOH, IPA, and water and etching reflecting temperature; and plating a film in which a economical and practical Si/SiO2-series high reflection film is found out by using film plating software TFC and is deposited by using magnetron sputtering technology in order that etching damage is reduced and the reflectivity of the micro reflector is increased. The method is suitable for the coupling of a vertical cavity surface emitting laser (VCSEL) and a fiber tail or other coupling requiring optical path bending, and effectively increasing coupling efficiency of the laser and the fiber.
Description
Technical field
The present invention relates to the preparation method that a kind of wet etching of silicon and technique for atomic layer deposition are applied to VCSEL module coupling package locating slot.
Background technology
Along with the progress of science and technology, at Radar Signal Transmission, the fields such as high resolution audio and video optical transport all need the Signal transmissions of high frequency, two-forty.Can be there is the inevitable problem such as to harass between decay and signal in high-frequency signal, develop optical fiber communication thus imperative in cable transmission.In the manufacturing process of light emitting module, when optical fiber is coupled with waveguide device, the xsect of waveguide and the match condition in fiber cores face are generally fixing, and optical fiber and waveguide accurately being aimed at is greatest problem in real work.Because the size of the core diameter of single-mode fiber and Waveguide end face is all in micron dimension, so it is very difficult for accurately aiming at.If fine registration can be realized, efficient coupling can be realized.Therefore, design and produce quality and well there is the Si and O isotopes of high-precision fixed bit function and array will be very important, become important optical passive component with the fiber array that it is made.And with the fiber array that Si and O isotopes array is developed into, become the best device be coupled with hyperchannel waveguide devices.
Existing silica-based V-type groove design concept utilizes the difference of atomic arrangement on silicon to show the anisotropy in KOH aqueous solution, and (100) face of silicon is corroded, and forming angle along (111) face is 54.74
ov-type groove.
1979, the Iga of Tokyo Institute of Technology proposed the thought of vertical cavity surface emitting laser, and developed first VCSEL device in 1988.From birth, the performance of its excellence just obtains the favor of people.The structure different from traditional edge-emitting laser brings many advantages: far away, the near field distribution of the little angle of divergence and circular symmetry make the coupling efficiency of itself and optical fiber greatly improve; Cavity length is extremely short, causes its longitudinal mode spacing to widen, and can realize single longitudinal mode operation in wider temperature range, dynamic modulation frequency is high; Cavity volume reduces to make its sponta-neous emission factor compared with the high several order of magnitude of common end surface-emitting laser, and this causes many physical characteristicss to be greatly improved; Can On-wafer measurement, significantly reduce cost of development; Light direction vertical substrates, the integrated of high density two-dimensional array can be realized easily, realize more high-power output, and because parallel arranged can multiple laser instrument perpendicular on the direction of substrate, so be applicable to very much being applied in the field such as parallel optical transmission and parallel optical interconnecting.
Due to the difference of structure cause the different situations of light direction under original V-type groove can cause the bending of optical fiber when being coupled, thus cause light loss larger.According to the atomic arrangement difference of silicon and to add when IPA enters in KOH solution because the difference of each crystal face degree of absorption regulates the etch rate in (100) and (110) face to make it reach speed ratio be 1 formation 45
othe micro-reflector in face, formed with (100) face angle by (101) and (10-1) is 45 simultaneously
ov-type groove.
Magnetron sputtering plating has the feature of certain kinetic energy after utilizing charged particle to accelerate in the electric field, ion is guided into the target electrode (negative electrode) made for sputtered material, and target atom is sputtered out make it move to substrate along certain direction and the final method in deposited on substrates film forming.Magnetron sputtering is that magnetic control principle to be combined with common sputtering technology the trajectory of electron motion utilized in the special distributed controll electric field in magnetic field, the technique of sputtering is improved with this, make coating film thickness and homogeneity controlled, and good, the cohesive force of film compactness of preparation is strong and high purity, sedimentation velocity is fast, base material temperature rise is low, to advantages such as the damage of rete are little.
When wavelength is 850nm, the refractive index n of silicon is 3.6780, the refractive index n of silicon dioxide is 1.4721, the characteristic of its refractive index and the cheap easy film forming feature of material itself, and consider that the substrate of V-type groove is silicon materials, so get Si/SiO in the setting of high reflectivity film stack
2film system.
The present invention relates to a kind of silica-based V-type groove preparation method, the method comprises: simulation: use Anisotropiccrystallineetchingsimulation(ACES according to the anisotropic character of silicon in KOH etching liquid) software carries out simulating the specific etching crystal orientation that have found and produce V-type groove and micro-reflector; Silicon etching: according to selection in KOH etching liquid of Si, SiO2 when their thermal expansivity determine practical mask, the proportioning of adjustment KOH, IPA, water and etching reflection temperature etch the micro-reflector of V-type groove and 45o; Plated film: use plated film software TFC to find economical and practical Si/SiO2 high-reflecting film, utilize PECVD deposit film, reduces the reflectivity of the damage raising micro-reflector that etching is formed.The present invention is applicable to being coupled of planar laser with vertical cavity (VCSEL) and tail optical fiber, or the coupling scenario of other light paths that need to turn back, and effectively raises the coupling efficiency of laser instrument and light.
Summary of the invention
The present invention will solve the coupled problem of vertical high intensity laser (VCSEL) array and fiber array, proposes a kind of with 45
othe silica-based V-type groove of micro-reflector, have employed thermal oxide, rapid thermal annealing, silicon the technology such as anisotropic etching, PECVD plated film prepare the silica-based V-type groove of the catoptron with high reflectivity, effectively raise the coupling efficiency of VCSEL array and fiber array.
It is high that thermal oxide produces density, smooth silicon dioxide.
Rapid thermal annealing can material surface produces in available heat oxidizing process damage defect, meanwhile, and the undesired impurities layer volatilization that in annealing process, silicon face covers, or taken out of annealing furnace by nitrogen.
Adopt magnetron sputtering technique on silicon chip, prepare fine and close high reflectivity film; reparation can be carried out the defect in silicon chip wet etching process and can make silicon face and air exclusion simultaneously; prevent the oxygen silicon again in air; can available protecting V-type groove and micro-reflector, improve performance and the life-span of device.
Embodiment
Silica-based V-type groove preparation method with micro-reflector of the present invention, it comprises the following steps:
1) with acetone, ethyl alcohol-ultrasound wave, standard cleaning is carried out to Si sheet;
2) Si sheet is soaked 1 ~ 2 minute in HF aqueous solution;
3) deionized water rinsing, uses nitrogen to dry up Si sheet and move in thermal oxidation furnace and carries out wet oxygen thermal oxide;
4) be oxidized rear taking-up Si sheet and put into rapid thermal anneler, rapid thermal annealing has been carried out to Si sheet;
5) photoetching, development is carried out;
6) the Si sheet developed, after drying up with nitrogen, with HF solution to SiO
2corrode;
7) KOH aqueous solution is used to corrode Si;
8) magnetron sputtering is used to carry out plated film to the V-type groove etched and micro-reflector, high-reflecting film and anti-reflection film (diaphragm).
Above-mentioned steps 1) process be: use acetone, ethyl alcohol-ultrasound wave, washed with de-ionized water silicon chip 5-10 minute successively.
Above-mentioned steps 2) in the mol ratio of HF aqueous solution be HF:(NH
4) F:H
2o=3:6:10, temperature of reaction is normal temperature.
Above-mentioned steps 3) in oxidation furnace temperature be 1200 DEG C, carry out under water vapor conditions, the time is 45min, reaches target thickness 1um.
Above-mentioned steps 4) in rapid thermal annealing be at N
2carry out under condition, be rapidly heated 20s, reaches target temperature (400 DEG C ~ 1200 DEG C), carry out annealing 80s, then be down to room temperature rapidly.
Above-mentioned steps 5) in be AZ5214 with photoresist, 105
oc hot plate front baking 10min, utilize ultraviolet photolithographic machine to expose sample, time shutter 4.3s, development time is 30s, after development, sample is placed on 120
opost bake 20min on C hot plate.
Above-mentioned steps 6) in the mol ratio of HF aqueous solution be HF:(NH
4) F:H
2o=3:6:10, temperature of reaction is normal temperature.
Above-mentioned steps 7) in the mass ratio of KOH aqueous solution be KOH:IPA:H2O=2:1:10, temperature of reaction is 75
oc.
Above-mentioned steps 8) in use magnetron sputtering to micro-reflector plated film, alternating growth SiO
2thickness 144nm, Si thickness 57nm tri-is to being SiO
2/ Si/SiO
2/ Si/SiO
2/ Si, now the reflectivity of high-reflecting film is close to 100%, then plates one deck SiO
2as anti-reflection film and the diaphragm that prevents Si to be oxidized.
Accompanying drawing illustrates: Fig. 1 is the silica-based V-type groove preparation technology process flow diagram with micro-reflector.
Accompanying drawing illustrates: Fig. 2 is the dovetail groove with micro-reflector sidewall and V-type groove that adopt ACES software simulation to go out.
Accompanying drawing illustrates: Fig. 3 is the dovetail groove and 45 that etching silicon wafer obtains
othe step instrument of micro-reflector sidewall detects figure.
Accompanying drawing illustrates: the high reflection film of Fig. 4 set by the VCSEL for 850nm wavelength, and simulation obtains its reflectivity close to 100%.
Claims (6)
1., with a silica-based V-type groove preparation method for micro-reflector, it is characterized in that comprising the following steps:
1) with acetone, ethyl alcohol-ultrasound wave, standard cleaning is carried out to Si sheet;
2) Si sheet is soaked 1 ~ 2 minute in HF aqueous solution;
3) deionized water rinsing, uses nitrogen to dry up Si sheet and move in thermal oxidation furnace and carries out wet-oxygen oxidation;
4) be oxidized rear taking-up Si sheet and put into rapid thermal anneler, rapid thermal annealing has been carried out to Si sheet;
5) photoetching, development is carried out;
6) the Si sheet developed, after drying up with nitrogen, with HF solution to SiO
2corrode;
7) KOH aqueous solution is used to corrode Si;
8) magnetron sputtering technique is used to carry out plated film to the V-type groove etched and micro-reflector.
2. the silica-based V-type groove preparation method with micro-reflector according to patent requirements 1, is characterized in that, step 2) and 7) in the mol ratio of HF aqueous solution be: HF:(NH
4) F:H
2o=3:6:10.
3. the silica-based V-type groove preparation method with micro-reflector according to patent requirements 1, is characterized in that, step 3) oxidation furnace temperature is 1200 DEG C, carry out under water vapor conditions, the time is 45min, reaches target thickness 1um.
4. the silica-based V-type groove preparation method with micro-reflector according to patent requirements 1, is characterized in that, step 4) process be: carry out under a nitrogen atmosphere, be rapidly heated 20 seconds, reach target temperature (400 DEG C ~ 1200 DEG C), carry out annealing 80 seconds, and then be down to room temperature rapidly.
5. the silica-based V-type groove preparation method with micro-reflector according to patent requirements 1, it is characterized in that, in step 7), the mass ratio of KOH aqueous solution is KOH:IPA:H2O=2:1:10.
6., according to the silica-based V-type groove preparation method of patent requirements 1 with micro-reflector, it is characterized in that, step 8) in the reaction source of deposition of reflective film be silicon dioxide and silicon respectively, film thickness is regulated by the cycle times of atomic layer reaction cycle.Alternating growth SiO2 thickness 144nm, Si thickness 57nm tri-are to i.e. SiO2/Si/SiO2/Si/SiO2/Si, and now the reflectivity of high-reflecting film is close to 100%, then plate one deck SiO2 as anti-reflection film and the diaphragm that prevents Si to be oxidized.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107817554A (en) * | 2017-12-07 | 2018-03-20 | 濮阳光电产业技术研究院 | It is a kind of that there is the silicon substrate V-groove preparation method assembled with selecting inclined function |
| CN109507775A (en) * | 2018-12-18 | 2019-03-22 | 濮阳光电产业技术研究院 | Silica-based optical fibers fixing groove and preparation method thereof of the active optical cable with balzed grating, |
| CN109683250A (en) * | 2017-10-18 | 2019-04-26 | 上海信及光子集成技术有限公司 | Active optical cable device |
| CN113376716A (en) * | 2021-06-21 | 2021-09-10 | 中国科学院光电技术研究所 | Method for coating antireflection film on surface of diffraction optical device |
-
2014
- 2014-07-21 CN CN201410347308.3A patent/CN105278042A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109683250A (en) * | 2017-10-18 | 2019-04-26 | 上海信及光子集成技术有限公司 | Active optical cable device |
| CN107817554A (en) * | 2017-12-07 | 2018-03-20 | 濮阳光电产业技术研究院 | It is a kind of that there is the silicon substrate V-groove preparation method assembled with selecting inclined function |
| CN109507775A (en) * | 2018-12-18 | 2019-03-22 | 濮阳光电产业技术研究院 | Silica-based optical fibers fixing groove and preparation method thereof of the active optical cable with balzed grating, |
| CN113376716A (en) * | 2021-06-21 | 2021-09-10 | 中国科学院光电技术研究所 | Method for coating antireflection film on surface of diffraction optical device |
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