CN105204191B - A kind of guide mode resonance for flash detection moves wave device - Google Patents
A kind of guide mode resonance for flash detection moves wave device Download PDFInfo
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- CN105204191B CN105204191B CN201510598647.3A CN201510598647A CN105204191B CN 105204191 B CN105204191 B CN 105204191B CN 201510598647 A CN201510598647 A CN 201510598647A CN 105204191 B CN105204191 B CN 105204191B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
Abstract
The present invention relates to a kind of guide mode resonance for flash detection to move wave device, the light-emitting film layer arranged above including basalis and basalis, also include being arranged in the layer of photonic crystals above light-emitting film layer, layer of photonic crystals is made up of arrangement arrangement in the dielectric posts of the periodic array of triangle configuration, dielectric posts are arranged vertically within light-emitting film layer upper surface, and the light that the material of dielectric posts is launched light-emitting film layer is transparent.Compared with prior art, the present invention has high conversion efficiency and time resolution, has the light direction of the launch ability of regulation and control of height again, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Description
Technical field
The invention belongs to nuclear radiation detection field, and in particular to a kind of guide mode resonance of scintillation detecter system moves wave device.
Background technology
Flash detection is a kind of detection mode that application is most wide in nuclear radiation detector.The emission wavelength of scintillator is determined
Determine to the requirement of the spectral response of detection and fluorescence Transmission system.Some existing scintillators, such as Ar, He, Kr, Xe indifferent gas
Body, its flashing peak wavelength is predominantly located at VUV wave band (105nm to 190nm) under radiation excitation.Due to vacuum
The fluorescence of ultraviolet band proposes special requirement, existing most photoelectric devices such as photomultiplier and semiconductor to detector
Photonic device is all not responding to the fluorescence of VUV wave band.In a word, VUV wave band fluorescence measurement is a difficult thing
Feelings.
Chinese patent CN1318537C discloses a kind of rare-earth doped tantalic acid salt transparent luminous thin-film and preparation method thereof, thoroughly
The chemical expression of bright film is (Ln1-xREx)TaO4, wherein, 0<x<1, Ln=Gd, Lu, RE=Eu, Tb；Adopted in preparation process
With sol-gel process, light-emitting film is obtained, under ultraviolet light or x-ray bombardment, film sends visible ray, realizes shifting ripple,
But using the light-emitting film of planar structure, without reference to the regulation and control that can not also realize to luminous directionality, and light
When center is Eu ions or Tb ions, about 1 millisecond of luminescence decay time."Anovel M′-type LuTaO4:Ln3+(Ln=Eu,
Tb)transparent scintillator films",Xiaolin Liu,Shiwei Chen,Mu Gu,Mengqiu Wu,
Zhiche Qiu,Bo Liu,Chen Ni and Shiming Huang,OPTICAL MATERIALS EXPRESS Vol.4,
No.1, p.172-178, in also disclose that Eu3+Luminous die-away time is 1.078 milliseconds, Tb3+Luminous die-away time is
1.096 milliseconds, it can be seen that, the time resolution of said system is low.
The content of the invention
Both there is high turn it is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of
Efficiency and time resolution are changed, the light direction of the launch ability of regulation and control with height, it is possible to increase wait blinking to ultraviolet
Detection efficient the shifting wave device with guide mode resonance structure.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of guide mode resonance for flash detection moves wave device, including basalis and basalis arrange above it is luminous thin
Film layer, in addition to the layer of photonic crystals above light-emitting film layer is arranged in, described layer of photonic crystals is in periodic array by arrangement
Dielectric posts form, dielectric posts are arranged vertically within light-emitting film layer upper surface, what the materials of dielectric posts was launched light-emitting film layer
Light is transparent；
In the periodic array of triangle configuration, the span in the cycle of the periodic array is 350- for described dielectric posts arrangement
430nm, 0.45~0.55 times of the cycle of a diameter of periodic array of described dielectric posts, the height of dielectric posts is light-emitting film
0.4~0.6 times of centre wavelength corresponding to layer main glow peak in vacuum, according to being wavelength half or a little more, this model
It is sufficient to enclose coupling efficiency, then it is high if It is not necessary to simultaneously increase preparation difficulty.
Preferably, 0.5 times of the cycle of the periodic array of a diameter of triangle configuration of described dielectric posts, the height of dielectric posts
Spend for 210~250nm.
The material of described dielectric posts includes SiN, GaN, TiO2、ZnO、Ta2O5Or Al2O3。
The refractive index of described light-emitting film layer is more than the refractive index of basalis.
The thickness of described light-emitting film layer betweenWithBetween；Wherein, λ is luminous thin
Centre wavelength in vacuum corresponding to the main glow peak of film layer, n1For the refractive index of light-emitting film layer, n2For the refraction of basalis
Rate.
Described light-emitting film layer is (Lu0.9Ce0.1)2SiO5, the centre wavelength in vacuum corresponding to main glow peak is
420nm。
Described basalis is the material transparent to vacuum-ultraviolet light, including quartz glass, LiF crystal, CaF2Crystal,
MgF2Crystal or BaF2Crystal.
The present invention moves wave device using guide mode resonance first and realizes the light emission direction regulation and control of shifting wave material, and improves and be
The time resolution of system.Launch visible ray after light-emitting film layer absorbs vacuum-ultraviolet light, select light-emitting film layer to need
High conversion efficiency, while there is fast decay of luminescence, in favor of time-resolved raising, Ce3+The luminous peak position of ion in
420nm, die-away time about 40ns, far smaller than 1 millisecond, die-away time is short, is advantageous to the time resolution of raising system, silicon
Its band gap width of sour lutetium is 6.8eV, and the absorption to vacuum-ultraviolet light is strong, and physicochemical properties are stable, has good anti-spoke
According to performance, Ce is adulterated3+The process conditions of ion are ripe, therefore (Lu0.9Ce0.1)2SiO5It is a suitable selection.Light-emitting film layer
Refractive index have to be larger than the refractive index of basalis, so as to which guided wave mode, (Lu can be formed in luminescent layer0.9Ce0.1)2SiO5；
Refractive index be 1.82, more than the basalis quartz glass (n=1.46), LiF crystal (n=1.38), CaF2Crystal (n=
1.43)、MgF2Crystal (n=1.38) and BaF2The refractive index of crystal (n=1.48)；The selection gist of light-emitting film thickness degree is
It is single mode light-emitting mode to ensure it, only when light-emitting film layer is single mode light-emitting mode, photonic crystal can be utilized to regulate and control
It is concentrated mainly on so that it lights on a direction, meeting the critical thickness of single mode emission isNow light-emitting film
A kind of only TE patterns may have in layer, and generation multimodes emitting is unfavorable for the regulation and control of directionality when thickness is more than this value,
In order to take into account luminous efficiency simultaneously, the selection of its thickness is 0.9 to 0.99 times of critical thickness；Light-emitting film layer is easy to use spin coating
Sol-gel process prepares film forming.The layer of photonic crystals being covered on light-emitting film layer can draw the light of single-mode guided wave pattern
Export comes, and this process is referred to as guide mode resonance, so as to realize far-field emission, meets relationWherein k//It is to lead
The propagating wave of wave mode loses, and G=2 π/a are reciprocal lattice vectors, and a is lattice constant, i.e. the cycle of periodic array dielectric posts, are arest neighbors
The distance between two dielectric posts.The foundation that dielectric posts highly select is that the field that dies of declining that guided wave mode is formed is located on its surface
The scope of half of vacuum medium wavelength of Fang great Yue, photonic crystal, which is arranged in this region, can just obtain enough interactions, but
Also It is not necessary to too high, the too high difficult increasing for causing to prepare, the light of guided wave mode is originally to be bound in inside luminescent layer,
It can not be emitted, can then produce guide mode resonance effect when being disposed with photonic crystal thereon, produce outgoing, while exit direction meets spy
Determine relation, i.e.,This formula, from the control for thus realizing directional.The selection of the diameter of dielectric posts
Consideration diffraction efficiency is typically required, generally the diameter of pillar is the half in the cycle of periodic array, significantly
It is excessive or too small can all influence outgoing efficiency.The symmetry of triangle configuration is higher, has more light to meet in azimuth
Diffraction equation, efficiency can be improved, and this patent uses the photonic crystal periodic array of triangle configuration, have preferably regulation and control
Efficiency.
Compared with prior art, the present invention has advantages below：
(1) guide mode resonance structure, which moves wave device, can realize the luminous effective shifting ripple of VUV scintillator, after moving ripple
Transmitting is located at visual field, is matched well with the response of photodetector, has the function that lighting in photonic crystal for single mode
Under realize guide mode resonance, produce the transmitting of directionality, be advantageous to focus on, therefore improve collection efficiency, it is final to realize detection effect
The lifting of rate.
(2) light-emitting film layer material selected by is the Ce for having fast attenuation characteristic3+Dopant material, maximum contrast realize the time
The lifting of resolution capability.
(3) the structure physicochemical properties are stable, and anti-radiation performance is excellent, easily prepared, is advantageous to practical application.
Brief description of the drawings
Fig. 1 is the side structure schematic view of the present invention；
Fig. 2 is the schematic diagram of layer of photonic crystals in the present invention；
Fig. 3 is the electromicroscopic photograph of sample in embodiment 1；
Fig. 4 is that sample excites the angle of lower luminescent spectrum to rely in extreme ultraviolet light in embodiment 1；
Fig. 5 is that sample excites the angle of lower luminescent spectrum to rely in extreme ultraviolet light in embodiment 2；
In figure, 1 is basalis, and 2 be light-emitting film layer, and 3 be layer of photonic crystals.
Embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
The structural representation of the present invention light-emitting film layer 2, layer of photonic crystals 3, lights as shown in figure 1, including basalis 1
Film layer 2 is arranged in above basalis 1, and layer of photonic crystals 3 is arranged in above light-emitting film layer, and Fig. 2 is brilliant for photon in the present invention
The structural representation of body, wherein a are the cycle of the periodic array of the triangle configuration in layer of photonic crystals, and d is the diameter of dielectric posts.
The material and structural parameters that the embodiment is chosen are as follows：Select CaF2Crystal is basalis, and light-emitting film layer is
(Lu0.9Ce0.1)2SiO5Thickness selection beThe photonic crystal cycle is 430nm, dielectric posts it is a diameter of
215nm, it is highly 210nm, dielectric material chooses SiN.
Preparation process is as follows：(1) choose thickness be 2mm, a diameter of 3cm smooth quartz substrate is basalis, using surpass
Sound cleaning obtains clean substrate, use to be coated.(2) lutecium nitrate of stoicheiometry dosage, cerous nitrate are dissolved in diformazan
In base ethanol, room temperature ultrasound, stirring are completely dissolved to it, transparent shape, sequentially add the positive silicic acid four of certain mol proportion example
Ethyl ester, deionized water, PEG400, often carry out ensuring that solution complete stability is transparent during next step.Mixed solution is stirred at room temperature
30 minutes to one hours are mixed, two to three hours of 110-150 DEG C of oil bath after the completion of stirring, it is i.e. available to stand 3 days at room temperature
Stable colloidal sol.After ageing three days, colloidal sol is laid on the quartz substrate scrubbed with dropper, successively with 10-30 seconds
800rpm and 30-60 seconds 1800rpm rotary substrate, make colloidal sol form wet film on substrate, are finally heat-treated five to ten minutes
The sintering procedure being put into behind left and right under Muffle furnace progress air atmosphere, sintering procedure are as follows：Half an hour are annealed at 450 DEG C to one small
When, slow constant-speed heating is to 1200 DEG C, and anneal 200-400min at 1200 DEG C, until natural cooling, you can obtain surface and put down
Whole, transparent (Lu0.9Ce0.1)2SiO5Film.(3) preparation of photonic crystal.Using conventional electron beam photoetching and inductively etc.
Plasma etching method.Using plasma strengthens chemical vapour deposition technique in (Lu0.9Ce0.1)2SiO5Plated on light-emitting film layer
SiN films thick 210nm processed.Oxygen plasma bombardment SiN is carried out using plasma etching instrument PlasmaEtch PE-50
Surface 1.8min, water-wetted surface is obtained, in favor of the adhesion of photoresist.SiN surfaces spin coating PMMA A4 (950k,
MicroChem) photoresist, photoresist spinner are the Quickstep 200SM of Solar-Semi companies, and rotating speed is arranged to 2800r/min,
Time 1min, the glue thickness 210nm of acquisition.In order to increase electric conductivity, 5nm chromium is deposited before electron beam lithography on PMMA again to increase
Charge effect when adding electric conductivity and eliminating electron beam lithography.Using JEOL JBX-6300FS type beamwriter lithography machines to photoetching
Glue is exposed, accelerating potential 50kV, electric current 200pA, is selected Raster patterns, is exposed according to layout.Dechromised
Cheng Caiyong 1.5g ammonium ceric nitrates, 1.5g concentrated nitric acids and 7g deionized waters configuration chromic acid, chromic acid solution is placed in by the sample after exposure
In, chromium is reacted into chromium ion with chromic acid, treats that sample surfaces become colorless from brown, is taken out sample washes of absolute alcohol and is used nitrogen
Air gun dries up surface.Development, uses MIBK at normal temperatures:IPA(1:3) develop 45s, washes of absolute alcohol 30s, nitrogen gun drying table
Face, baking temperature 90s, temperature are 100 DEG C, solidify PMMA.Etching, using CHF3+O2Process gas, RF power is 200W, DC
Bias 607V, etching gas CHF3 flows 45sccm, O2 flow 5sccm, etch period 270s, are gone with oxygen plasma afterwards
Except residual photoresist, scavenging period 2min.It is last to be cleaned by ultrasonic 10min in acetone, ethanol and deionized water successively, remove table
The magazine that face introduces in process, finally obtain required photonic crystal.Electromicroscopic photograph is as shown in Figure 3.Fig. 4 is sample
The angle for exciting lower luminescent spectrum in extreme ultraviolet light relies on, the results showed that it has obvious transmitting in 26 ° of angle, the angle
Luminous intensity on degree accounts for about the 78% of total luminous intensity, and the source of the transmitting is the single-mode guided wave mould under photonic crystal effect
The luminous of formula is directed into the angular emission.
Embodiment 2
The material and structural parameters that the embodiment is chosen are as follows：It is basalis to select LiF crystal, and light-emitting film layer is
(Lu0.9Ce0.1)2SiO5Thickness selection beThe photonic crystal cycle is 350nm, dielectric posts it is a diameter of
175nm, it is highly 210nm, dielectric material chooses SiN.
With embodiment 1, the PEG400 concentration that difference is to use when prepared by light-emitting film reduces sample preparation methods
To obtain 159nm thickness.Pattern when prepared by photonic crystal during electron beam exposure according to the present example implemented by design parameter.
Fig. 5 is that sample excites the angle of lower luminescent spectrum to rely in extreme ultraviolet light, the results showed that it has in 36 ° of angle
And significantly launch, the luminous intensity in the angle accounts for about the 70% of total luminous intensity, and the source of the transmitting is in photonic crystal
Under effect, the luminous of single-mode guided wave pattern is directed into the angular emission, with the angle difference in embodiment 1 from sample
The difference of thickness and the difference of lattice constant, the transmitting of notable directionality all show obvious regulating effect.
Embodiment 3
The present embodiment is substantially the same manner as Example 1, and difference is a diameter of of the dielectric posts of layer of photonic crystals
236nm, the height of dielectric posts is 252nm, and the obtained guide mode resonance for flash detection, which moves wave device, has high conversion effect
Rate and time resolution, there is the light direction of the launch ability of regulation and control of height again, it is possible to increase to the ultraviolet spy for waiting blinking
Survey efficiency.
Embodiment 4
The present embodiment is substantially the same manner as Example 2, and difference is a diameter of of the dielectric posts of layer of photonic crystals
158nm, the height of dielectric posts is 168nm, and the obtained guide mode resonance for flash detection, which moves wave device, has high conversion effect
Rate and time resolution, there is the light direction of the launch ability of regulation and control of height again, it is possible to increase to the ultraviolet spy for waiting blinking
Survey efficiency.
Embodiment 5
The embodiment is substantially the same manner as Example 1, and difference is that it is basalis to select quartz glass, obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 6
The embodiment is substantially the same manner as Example 1, and difference is to select BaF2Crystal is basalis, obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 7
The embodiment is substantially the same manner as Example 1, and difference is to select MgF2Crystal is basalis, obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 8
The embodiment is substantially the same manner as Example 1, and difference is the material selection GaN of dielectric posts, obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 9
The embodiment is substantially the same manner as Example 1, and difference is the material selection TiO of dielectric posts2, it is obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 10
The embodiment is substantially the same manner as Example 1, and difference is the material selection ZnO of dielectric posts, obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 11
The embodiment is substantially the same manner as Example 1, and difference is the material selection Ta of dielectric posts2O5, it is obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Embodiment 12
The embodiment is substantially the same manner as Example 1, and difference is the material selection Al of dielectric posts2O3, it is obtained to be used for
The guide mode resonance of flash detection, which moves wave device, has high conversion efficiency and time resolution, has the light launch party of height again
To ability of regulation and control, it is possible to increase to the ultraviolet detection efficient for waiting blinking.
Claims (5)
1. a kind of guide mode resonance for flash detection moves wave device, including the light-emitting film that basalis and basalis are arranged above
Layer, it is characterised in that also include being arranged in the layer of photonic crystals above light-emitting film layer, described layer of photonic crystals is in by arranging
The dielectric posts of periodic array are formed, and dielectric posts are arranged vertically within light-emitting film layer upper surface, and the material of dielectric posts is to light-emitting film
The light of layer transmitting is transparent；
In the periodic array of triangle configuration, the span in the cycle of the periodic array is 350- for described dielectric posts arrangement
430nm, 0.45~0.55 times of the cycle of a diameter of periodic array of described dielectric posts, the height of dielectric posts is light-emitting film
0.4~0.6 times of centre wavelength corresponding to layer main glow peak in vacuum；
The thickness of described light-emitting film layer betweenWithBetween；Wherein, λ is light-emitting film layer
Centre wavelength in vacuum corresponding to main glow peak, n1For the refractive index of light-emitting film layer, n2For the refractive index of basalis；It is described
Light-emitting film layer be (Lu0.9Ce0.1)2SiO5, the centre wavelength in vacuum corresponding to main glow peak is 420nm.
2. a kind of guide mode resonance for flash detection according to claim 1 moves wave device, it is characterised in that described
0.5 times of the cycle of the periodic array of a diameter of triangle configuration of dielectric posts, the height of dielectric posts is 210-250nm.
3. a kind of guide mode resonance for flash detection according to claim 1 or 2 moves wave device, it is characterised in that institute
The material for the dielectric posts stated includes SiN, GaN, TiO2、ZnO、Ta2O5Or Al2O3。
4. a kind of guide mode resonance for flash detection according to claim 1 moves wave device, it is characterised in that described
The refractive index of light-emitting film layer is more than the refractive index of basalis.
5. a kind of guide mode resonance for flash detection according to claim 1 moves wave device, it is characterised in that described
Basalis is the material transparent to vacuum-ultraviolet light, including quartz glass, LiF crystal, CaF2Crystal, MgF2Crystal or BaF2It is brilliant
Body.
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| CN106054229B (en) * | 2016-05-20 | 2018-06-26 | 同济大学 | A kind of scintillation component of plasmon crystal regulation and control |
| CN107356954A (en) * | 2017-06-26 | 2017-11-17 | 同济大学 | A kind of photonic crystal scintillation component to be lighted with directionality |
| CN108919401B (en) * | 2018-07-11 | 2020-11-06 | 中国石油大学(华东) | Guided-mode resonance filter |
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| Conical photonic crystals for enhancing light extraction efficiency from high refractive index materials;Jeong-Gil Kim et al;《OPTICS EXPRESS》;20150824;全文 * |
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