CN115144964B - Silicon-based array waveguide grating based on Euler bending wide waveguide - Google Patents
Silicon-based array waveguide grating based on Euler bending wide waveguide Download PDFInfo
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- 238000005452 bending Methods 0.000 title claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 230000007704 transition Effects 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims description 42
- 230000008859 change Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 10
- 238000013461 design Methods 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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Abstract
The invention discloses a silicon-based array waveguide grating based on Euler bending wide waveguides. The array waveguide area mainly comprises three multimode wide waveguide areas and two Euler bending wide waveguide areas which are sequentially and alternately connected, the bending part of the array waveguide area comprises the Euler bending wide waveguide areas, and both ends of the array waveguide area are respectively connected to the input area and the output area through the multimode wide waveguide areas; the design of double-layer etching and adiabatic tapered waveguides is adopted in the first transition region and the second transition region, and the array waveguide region utilizes multimode wide waveguides and Euler bending wide waveguides. The invention has the advantages of low loss, low crosstalk, compact structure and the like.
Description
Technical Field
The invention relates to an array waveguide grating in the field of optical communication, in particular to a silicon-based array waveguide grating based on Euler bending wide waveguides.
Background
With the continuous development of the communication industry, the demand for communication capacity is increasing. Dense wavelength division multiplexing is one of the most promising technologies for addressing the demands of mass communications. Currently, array waveguide gratings of silica materials have achieved large-scale commercialization by virtue of their excellent properties of low loss and low crosstalk. However, because of the low refractive index difference of this material, the common bending radius needs to be controlled in the order of millimeters, so that it has a drawback of large size, which limits the development of communication capacity per unit area to some extent.
The silicon-on-insulator material has a high refractive index difference, and the bending radius can reach tens or even several micrometers, which is beneficial to miniaturization of devices. Meanwhile, the manufacturing process is compatible with the CMOS process, and can be manufactured by using the well-established semiconductor processing technology. However, the method has serious defects, and random phase errors caused by random changes of waveguide widths in the manufacturing process can introduce high-level crosstalk; the mode mismatch caused by the high refractive index difference is more obvious, and the loss is larger.
In 2013, the university of belgium subject group widens the width of the silicon-based array waveguide from 500 nanometers to 800 nanometers of a single mode, and increases the process tolerance to a certain extent, so that the loss and crosstalk performance of the array waveguide grating are improved. However, it still employs 500nm wide single mode waveguides in the curved waveguide section and thus has limited success.
Disclosure of Invention
Aiming at the defects in the background technology, the invention provides a compact silicon-based array waveguide grating based on Euler bending and wide waveguides. And the transition part of the array waveguide and the free transmission area adopts double-layer etching and adiabatic tapered ridge waveguide design. The array waveguide region realizes low-loss fundamental mode transmission by utilizing multimode wide waveguides and Euler bending with gradually changed curvature, so that the process tolerance can be increased under the existing standard process, and the inter-channel crosstalk and the overall loss of the device are reduced.
The technical scheme adopted by the invention is as follows:
the invention comprises an input area, an array waveguide area and an output area which are sequentially connected, wherein the input area and the output area have the same structure and are symmetrically connected at two ends of the array waveguide area by taking the array waveguide area as a center; the input area mainly comprises an input waveguide, a first free transmission area, a first transition area and a first adiabatic taper waveguide which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic taper waveguide, a second transition area, a second free transmission area and an output waveguide which are sequentially connected along the waveguide transmission direction, and the first adiabatic taper waveguide and the second adiabatic taper waveguide are respectively connected to two ends of the array waveguide area; the array waveguide area is mainly formed by sequentially and alternately connecting three multimode wide waveguide areas and two Euler bending wide waveguide areas, one Euler bending wide waveguide area is connected between two adjacent multimode wide waveguide areas, the bending part of the array waveguide area is formed by the Euler bending wide waveguide areas, and two ends of the array waveguide area are respectively connected to the input area and the output area through the multimode wide waveguide areas.
The Euler bending wide waveguide area mainly comprises a front array and a rear array of a plurality of Euler bending wide waveguides at intervals, the bending radiuses of the Euler bending wide waveguides are the same, and the curvature change of the Euler bending wide waveguides meets an Archimedes spiral line equation.
The two multimode wide waveguide areas respectively connected to the input area and the output area are mainly composed of a front array and a rear array of a plurality of multimode wide waveguides at the same interval, and the multimode wide waveguide area between the two Euler bending wide waveguide areas is mainly composed of a front array and a rear array of a plurality of multimode wide waveguides at intervals.
The first transition area and the second transition area are identical in structure, the first transition area is mainly composed of a plurality of adiabatic tapered ridge waveguides, and the adiabatic tapered ridge waveguides are processed into a double-layer etching structure.
The first free transmission area and the second free transmission area are of the Rowland round structures with the same structure, and the output end of the first free transmission area and the input end of the second free transmission area are respectively arranged on the same section of circular arc.
The input waveguides and the output waveguides are all multiple, the multiple input waveguides are uniformly connected to the first free transmission area at the same interval, and the multiple output waveguides are uniformly connected to the second free transmission area at the same interval.
The length difference of adjacent waveguides in the waveguide grating is a certain value.
The adiabatic tapered ridge waveguide controls the coupling of input light into the arrayed waveguide region in the form of a fundamental mode.
The input light remains in fundamental mode form throughout the adiabatic tapered waveguide.
The waveguides in the waveguide grating are all arranged on the substrate silicon. The beneficial effects of the invention are as follows: the compact silicon-based array waveguide grating based on Euler bending and wide waveguide has the excellent performances of low loss, low crosstalk, compactness and the like, and is expected to be used for improving the optical communication capacity in unit area; the array waveguide region realizes low-loss fundamental mode transmission by utilizing a multi-mode wide waveguide and Euler bending with gradually changed curvature; the invention can reduce the phase error caused by mode mismatch and process error, and can be used in an optical communication system.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic illustration of Euler bending in accordance with the present invention;
FIG. 3 is a schematic diagram of a bilayer etch structure of the present invention;
fig. 4 is a spectrum response chart of the simulation of the present embodiment.
The figure shows: 1-input waveguide, 2-output waveguide, 3-first free transmission region, 4-multimode wide waveguide region, 5-Euler bend wide waveguide region, 7-adiabatic tapered ridge waveguide, 8-first adiabatic tapered waveguide.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and specific examples.
As shown in fig. 1, the invention comprises an input area, an array waveguide area and an output area which are sequentially connected, wherein the input area and the output area have the same structure and are symmetrically connected at two ends of the array waveguide area by taking the array waveguide area as a center;
the input area mainly comprises an input waveguide 1, a first free transmission area 3, a first transition area and a first adiabatic taper waveguide 8 which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic taper waveguide, a second transition area, a second free transmission area and an output waveguide 2 which are sequentially connected along the waveguide transmission direction, and the first adiabatic taper waveguide 8 and the second adiabatic taper waveguide are respectively connected to two ends of the array waveguide area;
the array waveguide area is mainly formed by sequentially and alternately connecting three multimode wide waveguide areas 4 and two Euler bending wide waveguide areas 5, one Euler bending wide waveguide area 5 is connected between two adjacent multimode wide waveguide areas 4, the bending part of the array waveguide area is formed by the Euler bending wide waveguide areas 5 with gradually changed curvature radius, and two ends of the array waveguide area are respectively connected to an input area and an output area through the multimode wide waveguide areas 4.
The euler bending wide waveguide area 5 mainly comprises a plurality of euler bending wide waveguides which are arrayed in a front-back mode at intervals, the bending radiuses of the euler bending wide waveguides are the same, and the curvature change of the euler bending wide waveguides meets an Archimedean spiral line equation.
The two multimode wide waveguide areas 4 respectively connected to the input area and the output area are mainly composed of a plurality of multimode wide waveguides in front of and behind an array at the same interval, the multimode wide waveguide area 4 between the two euler bending wide waveguide areas 5 is mainly composed of a plurality of multimode wide waveguides in front of and behind an array at intervals, and the interval of the multimode wide waveguides of the multimode wide waveguide area 4 can be calculated according to the length difference of the adjacent array waveguides.
Specifically, the array waveguide region ensures the transmission of a fundamental mode by the composition of the multimode wide waveguide region 4, and the fundamental mode is transmitted by utilizing the multimode wide waveguide, so that the phase error of the array waveguide caused by the roughness of the side wall caused by processing is reduced; meanwhile, according to the coupling mode theory, the wide waveguides are not easy to couple, so that the structure is compact. The Euler bending wide waveguides in the Euler bending wide waveguide area 5 are wide waveguides, and as the curvature of the Euler bending wide waveguides is gradually changed, the curvature of the Euler bending wide waveguides changes along with the bending angle to meet the Archimedes spiral line equation, so that the mode mismatch of light in the transmission process is avoided, and the higher-order modes can not be excited.
The first transition area and the second transition area have the same structure, the first transition area is mainly composed of a plurality of adiabatic tapered ridge waveguides 7, and the adiabatic tapered ridge waveguides 7 are processed into a double-layer etching structure.
The first free transmission area 3 and the second free transmission area are of the Rowland round structures with the same structure, and the output end of the first free transmission area 3 and the input end of the second free transmission area are respectively arranged on the same section of circular arc.
The input waveguides 1 and the output waveguides 2 are all plural, and the plural input waveguides 1 are uniformly connected to the first free transmission region 3 at the same intervals, and the plural output waveguides 2 are uniformly connected to the second free transmission region at the same intervals.
The length difference of adjacent waveguides in the waveguide grating is a certain value, so that a constant optical path difference exists.
By reasonably selecting the width of the adiabatic tapered ridge waveguide 7, the adiabatic tapered ridge waveguide 7 is used for controlling the input light to be coupled into the array waveguide area in the form of a fundamental mode, so that the degree of mode mismatch is reduced, loss is reduced, a small amount of existing high-order modes are filtered out, and crosstalk is reduced.
The input light remains in fundamental mode form throughout the adiabatic taper waveguide 8.
The waveguides in the waveguide grating are all disposed on the substrate silicon.
Specifically, a section of broad spectrum input light is input from an input waveguide 1, the intensity of an input light field is Gaussian, the input light is diffracted when passing through a first free transmission area 3 of the input area, and the diffracted input light is coupled into an array waveguide area for transmission; because two adjacent waveguides in the array waveguide area have constant length difference, different phase differences exist for light with different wavelengths, so that multi-beam interference occurs in the second free transmission area of the output area of the input light; and because the light with different wavelengths is imaged at different positions of the Rowland circle, the input light with different wavelengths is obtained after the input light with multiple light beam interference is output from the plurality of output waveguides 2 through the second free transmission area, and the light splitting function of the input light is realized. On the contrary, light with different specific wavelengths is input from corresponding waveguides in the plurality of output waveguides 2, and due to reversibility of the optical path, the light with different specific wavelengths is output from one input waveguide 1, thereby realizing the beam combination function for the light with different specific wavelengths.
The specific embodiment of the invention is as follows:
silicon nanowire optical waveguides based on silicon insulator materials are selected: the core layer is made of silicon material, the thickness is 220nm, the thickness of the shallow etching layer is 150nm, and the refractive index is 3.4744; the lower cladding and the upper cladding are made of silicon dioxide SiO 2 The thickness was 2 μm and the refractive index was 1.4404. The key parameters of the arrayed waveguide grating in this embodiment are shown in table 1.
TABLE 1
As shown in fig. 2, the euler bend of the euler bend wide waveguide in the present embodiment is 90 degrees, and the middle point of the euler bend wide waveguide is the minimum radius R min And minimum radius R min The size is 20um, and the edge part is the maximum radius R max And maximum radius R max The size is 2000um, the radius of the middle part is gradually changed, and the effective radius R of the middle part eff The size is 37.0901um.
As shown in FIG. 3, the height h is taken into consideration 1 A first free transmission region 3 of 220nm and a height h 2 For the mode matching degree of the shallow etching part of 150nm and the reflection condition caused by the limitation of the processing minimum size, one end width of the first transition area conical ridge waveguide is from w 1 =1.13 um gradual change to w 2 Length l=0.45 um 1 At 16um, the middle ridge waveguide width remains w 2 =0.45 um, the width of the other end of the first transition region tapered ridge waveguide is constant from w 4 =1.33 um gradual change to w 2 Length l=0.45 um 2 25um. The width of the first adiabatic taper waveguide is from w 2 =0.45 um gradual change to w 3 Length l=2um 3 25um. The above parameters ensure that more than 99.4% of the energy of the input light is transferred in the fundamental mode in the arrayed waveguide region.
As shown in FIG. 4, the loss of the arrayed waveguide grating in the embodiment is 0.69-1.66 dB, the uniformity is within 1dB, and the crosstalk is lower than 36dB.
The above-described embodiments are intended to illustrate the present invention, not to limit it, and any modifications and variations made thereto are within the spirit of the invention and the scope of the appended claims.
Claims (9)
1. A silicon-based array waveguide grating based on Euler bending wide waveguide is characterized in that: the array waveguide structure comprises an input area, an array waveguide area and an output area which are sequentially connected, wherein the input area and the output area have the same structure and are symmetrically and uniformly connected to two ends of the array waveguide area by taking the array waveguide area as a center;
the input area mainly comprises an input waveguide (1), a first free transmission area (3), a first transition area and a first adiabatic taper waveguide (8) which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic taper waveguide, a second transition area, a second free transmission area and an output waveguide (2) which are sequentially connected along the waveguide transmission direction, and the first adiabatic taper waveguide (8) and the second adiabatic taper waveguide are respectively connected to two ends of the array waveguide area;
the array waveguide area is mainly formed by sequentially and alternately connecting three multimode wide waveguide areas (4) and two Euler bending wide waveguide areas (5), one Euler bending wide waveguide area (5) is connected between two adjacent multimode wide waveguide areas (4), the bending part of the array waveguide area is formed by the Euler bending wide waveguide areas (5), and two ends of the array waveguide area are respectively connected to an input area and an output area through the multimode wide waveguide areas (4);
the input light always keeps a basic mode form in the adiabatic taper waveguide (8), the array waveguide area ensures the transmission of the basic mode by the composition of the multimode wide waveguide area (4), and the multimode wide waveguide is used for transmitting the basic mode, so that the phase error of the array waveguide caused by the roughness of the side wall caused by processing is reduced;
the width of the array waveguide is 2 mu m;
the first transition area and the second transition area are identical in structure, the first transition area and the second transition area are formed by sequentially connecting three heat insulation tapered ridge waveguides (7), the first heat insulation tapered ridge waveguides (7) and the third heat insulation tapered ridge waveguides (7) are gradient waveguides, the width of the second heat insulation tapered ridge waveguides (7) is kept unchanged, the width of the first heat insulation tapered ridge waveguides (7) is gradually changed from the width larger than the width of the second heat insulation tapered ridge waveguides (7) to the width of the second heat insulation tapered ridge waveguides (7), and the width of the third heat insulation tapered ridge waveguides (7) is gradually changed from the width of the second heat insulation tapered ridge waveguides (7) to the width larger than the width of the second heat insulation tapered ridge waveguides (7).
2. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the Euler bending wide waveguide area (5) mainly comprises a front array and a rear array of a plurality of Euler bending wide waveguides at intervals, the bending radiuses of the Euler bending wide waveguides are the same, and the curvature change of the Euler bending wide waveguides meets an Archimedes spiral line equation.
3. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the two multimode wide waveguide areas (4) respectively connected to the input area and the output area are mainly composed of a front array and a rear array of a plurality of multimode wide waveguides at the same interval, and the multimode wide waveguide areas (4) between the two Euler bending wide waveguide areas (5) are mainly composed of a front array and a rear array of a plurality of multimode wide waveguides at the interval.
4. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the adiabatic tapered ridge waveguide (7) is processed into a double-layer etching structure.
5. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the first free transmission area (3) and the second free transmission area are of the Rowland round structures with the same structure, and the output end of the first free transmission area (3) and the input end of the second free transmission area are respectively arranged on the same section of circular arc.
6. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the input waveguides (1) and the output waveguides (2) are all multiple, the multiple input waveguides (1) are uniformly connected to the first free transmission area (3) at the same interval, and the multiple output waveguides (2) are uniformly connected to the second free transmission area at the same interval.
7. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the length difference of adjacent waveguides in the silicon-based array waveguide grating is a certain value.
8. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the adiabatic tapered ridge waveguide (7) controls the coupling of input light into the arrayed waveguide region in the form of a fundamental mode.
9. The silicon-based arrayed waveguide grating based on the euler bending wide waveguide according to claim 1, wherein: the waveguides in the silicon-based array waveguide grating are all arranged on the substrate silicon.
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