CN115144964A - Silicon-based array waveguide grating based on Euler bending wide waveguide - Google Patents
Silicon-based array waveguide grating based on Euler bending wide waveguide Download PDFInfo
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- 238000005452 bending Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 44
- 230000007704 transition Effects 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
Abstract
The invention discloses a silicon-based array waveguide grating based on Euler bending wide waveguide. The waveguide array comprises an input waveguide, a first free transmission area, a first transition area, a first adiabatic tapered waveguide, an array waveguide area, a second adiabatic tapered waveguide, a second transition area, a second free transmission area and an output waveguide which are sequentially connected along a waveguide transmission direction, wherein the array waveguide area mainly comprises three multi-mode-width waveguide areas and two Euler bending wide waveguide areas which are sequentially and alternately connected, the bending part of the array waveguide area comprises the Euler bending wide waveguide areas, and two ends of the array waveguide area are respectively connected to the input area and the output area through the multi-mode wide waveguide areas; the first transition region and the second transition region both adopt the design of double-layer etching and adiabatic tapered waveguide, and the array waveguide region utilizes multimode wide waveguide and Euler bending wide waveguide. The invention has the advantages of low loss, low crosstalk, compact structure and the like.
Description
Technical Field
The invention relates to an arrayed waveguide grating in the field of optical communication, in particular to a silicon-based arrayed waveguide grating based on Euler bending wide waveguide.
Background
With the continuous development of the communication industry, people have more and more demands on communication capacity. The dense wavelength division multiplexing technology is one of the most promising technologies for solving the massive communication requirements. At present, the arrayed waveguide grating of silica material has been commercialized in a large scale by virtue of its excellent properties of low loss and low crosstalk. However, due to the low refractive index difference of the material, the common bending radius needs to be controlled in the millimeter order, so that it has a defect of large size, which limits the development of communication capacity per unit area to some extent.
The silicon-on-insulator material has high refractive index difference, the bending radius can reach dozens of even several microns, and the miniaturization of the device is facilitated. Meanwhile, the manufacturing process is compatible with the CMOS process, and the semiconductor device can be manufactured by using the well-established semiconductor processing technology. But it also has serious drawbacks that random phase errors caused by random variations in waveguide width during fabrication introduce high levels of crosstalk; mode mismatch due to high refractive index difference is also more significant and losses are larger.
In 2013, the subject group of the university of root-top, belgium widens the width of the silicon-based array waveguide from 500 nanometers of a single mode to 800 nanometers, and the process tolerance is increased to a certain extent, so that the loss and crosstalk performance of the array waveguide grating are improved. However, it still uses a single mode waveguide of 500nm width in the curved waveguide section, and thus has limited success.
Disclosure of Invention
Aiming at the defects in the background art, the invention provides a compact silicon-based arrayed waveguide grating based on Euler bending and wide waveguide. The design of double-layer etching and adiabatic tapered ridge waveguide is adopted in the transition part of the arrayed waveguide and the free transmission region. The array waveguide area utilizes multimode wide waveguide and Euler bending with gradually changed curvature to realize low-loss fundamental mode transmission, and can increase process tolerance and reduce crosstalk between channels and overall loss of devices under the existing standard process.
The technical scheme adopted by the invention is as follows:
the waveguide array comprises an input area, an array waveguide area and an output area which are sequentially connected, wherein the input area and the output area have the same structure and are symmetrically connected to the two ends of the array waveguide area by taking the array waveguide area as a center; the input area mainly comprises an input waveguide, a first free transmission area, a first transition area and a first adiabatic tapered waveguide which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic tapered waveguide, a second transition area, a second free transmission area and an output waveguide which are sequentially connected along the waveguide transmission direction, and the first adiabatic tapered waveguide and the second adiabatic tapered waveguide are respectively connected to two ends of the array waveguide area; the array waveguide region is mainly formed by sequentially and alternately connecting three multi-mode-width waveguide regions and two Euler bending wide waveguide regions, one Euler bending wide waveguide region is connected between two adjacent multi-mode-width waveguide regions, the bending part of the array waveguide region is formed by the Euler bending wide waveguide regions, and two ends of the array waveguide region are respectively connected to the input region and the output region through the multi-mode wide waveguide regions.
The Euler bending wide waveguide area is mainly composed of a plurality of Euler bending wide waveguides which are arrayed front and back at intervals, the bending radiuses of the Euler bending wide waveguides are the same, and the curvature change of the Euler bending wide waveguides meets the Archimedes spiral equation.
The two multi-mode-width waveguide areas respectively connected to the input area and the output area are both mainly composed of a plurality of multi-mode-width waveguides arranged in a front-back array at the same interval, and the multi-mode-width waveguide area positioned between the two euler bending-width waveguide areas is mainly composed of a plurality of multi-mode-width waveguides arranged in a front-back array at intervals.
The first transition region and the second transition region have the same structure, the first transition region is mainly composed of a plurality of adiabatic tapered ridge waveguides, and the adiabatic tapered ridge waveguides are processed into a double-layer etching structure.
The first free transmission area and the second free transmission area are both of Rowland circle structures with the same structure, and the output end of the first free transmission area and the input end of the second free transmission area are both on the same arc.
The input waveguide and the output waveguide are both multiple, the multiple input waveguides are uniformly connected to the first free transmission area at the same interval, and the multiple output waveguides are uniformly connected to the second free transmission area at the same interval.
The length difference of adjacent waveguides in the waveguide grating is a certain value.
The adiabatic tapered ridge waveguide controls the input light to be coupled into the arrayed waveguide region in the mode of a fundamental mode.
The input light always remains in the fundamental mode form in the adiabatic tapered waveguide.
The waveguides in the waveguide grating are all arranged on the substrate silicon. The invention has the beneficial effects that: the invention realizes the compact silicon-based array waveguide grating based on Euler bending and wide waveguide, has the excellent performances of low loss, low crosstalk, compactness and the like, and is expected to be used for improving the optical communication capacity in unit area; the array waveguide region realizes low-loss fundamental mode transmission by utilizing multi-mode-width waveguides and Euler bends with gradually-changed curvatures; the invention can reduce phase error caused by mode mismatch and process error, and can be used in optical communication system.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic representation of the Euler curve of the present invention;
FIG. 3 is a schematic diagram of a bi-layer etch structure of the present invention;
fig. 4 is a graph of the spectral response of the simulation of the present embodiment.
Shown in the figure: 1-input waveguide, 2-output waveguide, 3-first free transmission region, 4-multimode wide waveguide region, 5-euler bent wide waveguide region, 7-adiabatic tapered ridge waveguide, 8-first adiabatic tapered waveguide.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
As shown in fig. 1, the present invention includes an input region, an array waveguide region and an output region connected in sequence, wherein the input region and the output region have the same structure and are symmetrically connected to two ends of the array waveguide region with the array waveguide region as the center;
the input area mainly comprises an input waveguide 1, a first free transmission area 3, a first transition area and a first adiabatic tapered waveguide 8 which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic tapered waveguide, a second transition area, a second free transmission area and an output waveguide 2 which are sequentially connected along the waveguide transmission direction, and the first adiabatic tapered waveguide 8 and the second adiabatic tapered waveguide are respectively connected to two ends of the array waveguide area;
the array waveguide region is mainly composed of three multi-mode-width waveguide regions 4 and two Euler bending wide waveguide regions 5 which are sequentially and alternately connected, one Euler bending wide waveguide region 5 is connected between every two adjacent multi-mode-width waveguide regions 4, the bending part of the array waveguide region is composed of the Euler bending wide waveguide regions 5 with gradually changed curvature radiuses, and two ends of the array waveguide region are respectively connected to the input region and the output region through the multi-mode-width waveguide regions 4.
The euler curved wide waveguide region 5 is mainly composed of a plurality of euler curved wide waveguides arrayed front and back at intervals, the curved radiuses of the euler curved wide waveguides are the same, and the curvature change of the euler curved wide waveguides meets the Archimedes spiral equation.
The two multi-mode-width waveguide regions 4 respectively connected to the input region and the output region are both mainly composed of a plurality of multi-mode-width waveguides arrayed front and back at the same interval, the multi-mode-width waveguide region 4 positioned between the two euler bending wide waveguide regions 5 is mainly composed of a plurality of multi-mode-width waveguides arrayed front and back at intervals, and the interval of the plurality of multi-mode-width waveguides of the multi-mode-width waveguide region 4 can be obtained by calculation according to the length difference of adjacent arrayed waveguides.
Specifically, the array waveguide region is composed of a multi-mode-width waveguide region 4 to ensure the transmission of a fundamental mode, and the multi-mode-width waveguide is used for transmitting the fundamental mode, so that the phase error of the array waveguide caused by the side wall roughness caused by processing is reduced; meanwhile, according to the coupled mode theory, coupling is not easy to occur between the wide waveguides, so that the structure is compact. The euler bent wide waveguides in the euler bent wide waveguide region 5 are all wide waveguides, and due to the fact that the curvature of the euler bent wide waveguides is gradually changed and the curvature of the euler bent wide waveguides meets the Archimedes spiral equation along with the change of the bending angle, mode mismatch of light in the transmission process is avoided, and high-order modes can not be excited.
The first transition region and the second transition region have the same structure, the first transition region is mainly composed of a plurality of adiabatic tapered ridge waveguides 7, and the adiabatic tapered ridge waveguides 7 are processed into a double-layer etching structure.
The first free transmission area 3 and the second free transmission area are both in a Rowland circle structure with the same structure, and the output end of the first free transmission area 3 and the input end of the second free transmission area are both on the same arc.
The input waveguides 1 and the output waveguides 2 are each plural, and the plural input waveguides 1 are connected to the first free transmission region 3 at the same intervals, and the plural output waveguides 2 are connected to the second free transmission region at the same intervals, evenly.
The length difference of adjacent waveguides in the waveguide grating is a certain value, so that constant optical path difference exists.
By reasonably selecting the width of the adiabatic tapered ridge waveguide 7, the adiabatic tapered ridge waveguide 7 is utilized to control input light to be coupled into an array waveguide region in a mode of a fundamental mode, so that the degree of mode mismatch is reduced, the loss is reduced, a small amount of existing high-order modes are filtered out, and the crosstalk is reduced.
The input light remains in the fundamental mode form throughout the adiabatic tapered waveguide 8.
The waveguides in the waveguide grating are all arranged on the substrate silicon.
Specifically, input light with a wide spectrum is input from an input waveguide 1, the input light field intensity is in Gaussian distribution, the input light is diffracted when passing through a first free transmission area 3 of an input area, and the input light after being diffracted is coupled into an array waveguide area for transmission; because two adjacent waveguides in the arrayed waveguide region have constant length difference, light with different wavelengths has different phase difference, so that input light generates multi-beam interference in a second free transmission region of the output region; and because the light with different wavelengths forms images at different positions of the Rowland circle, the input light subjected to multi-beam interference is output from the plurality of output waveguides 2 through the second free transmission region to obtain light with different wavelengths, so that the light splitting function of the input light is realized. On the contrary, the light with different specific wavelengths is input from the corresponding waveguide in the plurality of output waveguides 2, and the light with different specific wavelengths is output from one input waveguide 1 due to the reversibility of the optical path, thereby realizing the beam combination function of the light with different specific wavelengths.
The specific embodiment of the invention is as follows:
optional baseSilicon nanowire optical waveguides in silicon insulator materials: the core layer is made of silicon material, the thickness is 220nm, the thickness of the shallow etching layer is 150nm, and the refractive index is 3.4744; the materials of the lower cladding and the upper cladding are both silicon dioxide SiO 2 The thickness was 2 μm, and the refractive index was 1.4404. The key parameters of the arrayed waveguide grating in this embodiment are specifically shown in table 1.
TABLE 1
As shown in FIG. 2, the Euler bend of the Euler-bent wide waveguide in the present embodiment is 90 degrees, and the middle point of the Euler-bent wide waveguide is the minimum radius R min And a minimum radius R min The size is 20um, the edge part has the maximum radius R max And the maximum radius R max The size is 2000um, the radius of the middle part is gradually changed, and the effective radius R of the middle part eff The size is 37.0901um.
As shown in FIG. 3, the height h is taken into account 1 A first free transmission region 3 of 220nm and a height h 2 The width of one end of the first transition region tapered ridge waveguide is from w 1 Transition of =1.13um to w 2 =0.45um, length L 1 Is 16um, the width of the middle ridge waveguide is kept w 2 The width of the other end of the first transition region tapered ridge waveguide is unchanged from w =0.45um 4 Transition of =1.33um to w 2 =0.45um, length L 2 Is 25um. The width of the first adiabatic tapered waveguide is from w 2 Transition of =0.45um to w 3 Length L of =2um 3 Is 25um. The above parameters may ensure that more than 99.4% of the energy of the input light is transmitted in the fundamental mode in the arrayed waveguide region.
As shown in fig. 4, the loss of the arrayed waveguide grating in this embodiment is 0.69 to 1.66dB, the uniformity is within 1dB, and the crosstalk is lower than 36dB.
The above-described embodiments are intended to illustrate rather than limit the invention, and any modifications and variations of the present invention are within the spirit and scope of the appended claims.
Claims (10)
1. A silica-based array waveguide grating based on Euler bending wide waveguide is characterized in that: the array waveguide device comprises an input area, an array waveguide area and an output area which are sequentially connected, wherein the input area and the output area have the same structure and are symmetrically connected to the two ends of the array waveguide area by taking the array waveguide area as a center; the input area mainly comprises an input waveguide (1), a first free transmission area (3), a first transition area and a first adiabatic tapered waveguide (8) which are sequentially connected along the waveguide transmission direction, the output area mainly comprises a second adiabatic tapered waveguide, a second transition area, a second free transmission area and an output waveguide (2) which are sequentially connected along the waveguide transmission direction, and the first adiabatic tapered waveguide (8) and the second adiabatic tapered waveguide are respectively connected to two ends of the array waveguide area; the array waveguide region is mainly formed by sequentially and alternately connecting three multi-mode-width waveguide regions (4) and two Euler bending wide waveguide regions (5), one Euler bending wide waveguide region (5) is connected between every two adjacent multi-mode-width waveguide regions (4), the bending part of the array waveguide region is formed by the Euler bending wide waveguide regions (5), and two ends of the array waveguide region are respectively connected to the input region and the output region through the multi-mode-width waveguide regions (4).
2. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the euler curved wide waveguide region (5) is mainly composed of a plurality of euler curved wide waveguides which are arrayed front and back at intervals, the curved radiuses of the euler curved wide waveguides are the same, and the curvature change of the euler curved wide waveguides meets the Archimedes spiral equation.
3. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the two multi-mode-width waveguide areas (4) respectively connected to the input area and the output area are both mainly composed of a plurality of multi-mode-width waveguides arranged in a front-back array at the same interval, and the multi-mode-width waveguide area (4) positioned between the two Euler bending-width waveguide areas (5) is mainly composed of a plurality of multi-mode-width waveguide arranged in a front-back array at intervals.
4. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the first transition region and the second transition region are identical in structure, the first transition region is mainly composed of a plurality of adiabatic tapered ridge waveguides (7), and the adiabatic tapered ridge waveguides (7) are processed into a double-layer etching structure.
5. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the first free transmission area (3) and the second free transmission area are both of Rowland circle structures with the same structure, and the output end of the first free transmission area (3) and the input end of the second free transmission area are both on the same arc.
6. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the input waveguides (1) and the output waveguides (2) are multiple, the multiple input waveguides (1) are uniformly connected to the first free transmission area (3) at the same intervals, and the multiple output waveguides (2) are uniformly connected to the second free transmission area at the same intervals.
7. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the length difference of adjacent waveguides in the waveguide grating is a certain value.
8. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the adiabatic tapered ridge waveguide (7) controls the coupling of input light into the arrayed waveguide region in the form of a fundamental mode.
9. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the input light always remains in the form of a fundamental mode in the adiabatic tapered waveguide (8).
10. The silicon-based arrayed waveguide grating based on the Euler curved wide waveguide as claimed in claim 1, wherein: the waveguides in the waveguide grating are all arranged on the substrate silicon.
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