CN116165742A - Double-layer silicon nitride grating coupler integrated with bottom reflecting layer - Google Patents
Double-layer silicon nitride grating coupler integrated with bottom reflecting layer Download PDFInfo
- Publication number
- CN116165742A CN116165742A CN202310161920.0A CN202310161920A CN116165742A CN 116165742 A CN116165742 A CN 116165742A CN 202310161920 A CN202310161920 A CN 202310161920A CN 116165742 A CN116165742 A CN 116165742A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon nitride
- grating
- nitride grating
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
Abstract
The invention discloses a double-layer silicon nitride grating coupler integrated with a bottom reflecting layer, and relates to the fields of optical communication and microwave photonics. The semiconductor device comprises an oxide upper cladding layer, a second silicon nitride grating layer, an oxide interlayer, a first silicon nitride grating layer, an oxide lower cladding layer, a bottom reflecting layer and a substrate layer which are arranged from top to bottom, wherein the two layers of gratings are completely embedded in the oxide upper and lower cladding layers, and have fixed intervals in the horizontal and vertical directions. The first silicon nitride grating layer is uniformly arranged with a certain period and a filling duty ratio, and the second silicon nitride grating layer adopts apodization treatment. The double-layer grating design can realize high directivity and inhibit side lobes. The bottom reflecting layer adopts a multilayer distributed Bragg reflection design, so that the light field coupled downwards is effectively prevented from leaking to the substrate.
Description
Technical Field
The invention belongs to the field of optical communication and microwave photons, and particularly relates to a double-layer silicon nitride grating coupler integrated with a bottom reflecting layer.
Background
In recent years, the size of semiconductor microelectronic chips has approached the theoretical limit, and it has become increasingly difficult to break through the restrictions of moore's law. However, the optoelectronic integrated chip is considered as a revolutionary device capable of breaking through moore's law due to its huge transmission bandwidth and excellent low power consumption characteristics, and the future chip pattern is changed. Silicon-based integrated circuits refer to the integration of optoelectronic devices on a silicon substrate to form an on-chip optical system. When transmitting optical signals, optical signals need to be coupled into the optoelectronic chip from an external optical fiber, or processed optical signals need to be coupled into the optical fiber from the optoelectronic chip. Currently, two optical coupling modes are commonly used: the end coupling is coupled vertically. Compared with end surface coupling, the vertical coupling mode based on the grating coupler can reduce the size of the device; the layout is flexible, the chip can be designed at any position and is easy to form array, and great convenience is provided for the subsequent test and packaging of the photoelectronic chip. However, the lower coupling efficiency and narrower bandwidth faced by conventional grating couplers are in need of resolution.
Conventional silicon-on-insulator based grating couplers can achieve higher coupling efficiency, but with narrower bandwidths. Silicon nitride is used as a CMOS process compatible material, the refractive index of the silicon nitride is between that of silicon dioxide and silicon, so that the grating period is large, and the grating number is smaller in the range of the optical fiber core layer, so that the bandwidth is large; silicon nitride has a larger energy band gap and a large-range transparent optical window, and has extremely weak two-photon absorption effect in a C-band window of optical fiber communication; when the waveguide thickness is larger than 700nm, the dispersion regulation and control of the waveguide can be realized, and the method is applied to nonlinear optical devices such as optical frequency combs, supercontinuum generation and the like. The material characteristics enable the silicon nitride grating coupler with the thick film to have wider application fields compared with the silicon grating coupler on the insulator.
Silicon nitride grating couplers with thicknesses greater than 700 a nm have been reported to work very rarely. Wherein, xia Jinsong of university of science and technology teaches research team to research a 700nm thick single layer silicon nitride shallow etched grating coupler, combined with inverted cone waveguide structure, coupling efficiency of-3.7 dB was measured in experiments, 1dB bandwidth was 54nm, and coupling angle was 8 °. However, the coupler requires a complex and fragile mode conversion structure, and has poor stability: the key size is smaller than 100 nm, and can not be prepared by an ultraviolet photoetching machine.
Disclosure of Invention
The invention aims to provide a double-layer silicon nitride grating coupler integrated with a bottom reflecting layer, which is used for solving the problems of low coupling efficiency and narrow bandwidth of an optical signal when the optical signal is coupled between a thick silicon nitride photon chip and an optical fiber.
In order to solve the problems, the technical scheme of the invention is as follows:
a double-layer silicon nitride grating coupler integrated with a bottom reflecting layer comprises an oxide upper cladding layer, a second silicon nitride grating layer, an oxide interlayer, a first silicon nitride grating layer, an oxide lower cladding layer, a bottom reflecting layer and a substrate layer which are sequentially laminated from top to bottom.
Further, the materials used for the oxide upper cladding layer, the oxide interlayer and the oxide lower cladding layer are silicon dioxide, the refractive index of the materials is smaller than that of the first silicon nitride grating layer, and the thicknesses of the oxide upper cladding layer and the oxide lower cladding layer are not smaller than 2.5 mu m.
Further, the first silicon nitride grating layer adopts a full etching process, and the grating thickness is more than or equal to 700 nm.
Further, the first silicon nitride grating layer is a uniform grating, and the uniform grating means that each grating stripe has the same width and period in the whole grating.
Further, the second silicon nitride grating layer adopts a full etching process, and the grating thickness is greater than or equal to 500 nm.
Further, the second silicon nitride grating layer is an apodized grating, wherein the apodized grating refers to that each grating stripe in the whole grating has different widths and periods, and the vertical direction interval between the first silicon nitride grating layer and the second silicon nitride grating layer is in the range of 50 nm-150 nm.
Further, the bottom reflecting layer is formed by alternately depositing a high refractive index material layer and a low refractive index material layer, and the thickness of the high refractive index layer and the low refractive index layer ranges from 100 nm to 350 nm; the high refractive index material layer is silicon nitride, and the low refractive index material layer is silicon dioxide.
Further, the substrate layer is made of silicon.
Furthermore, the silicon nitride grating structure further comprises an incident waveguide and a conical waveguide, wherein the materials of the incident waveguide and the conical waveguide are consistent with those of the first silicon nitride grating layer, the thicknesses of the incident waveguide and the conical waveguide are equal to those of the first silicon nitride grating layer, an additional mode conversion structure is not needed, the initial end of the conical waveguide is connected with the tail end of the incident waveguide, and the tail end of the conical waveguide is connected with the initial end of the first silicon nitride grating layer.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects:
1. the silicon nitride thin layer with the thickness of more than 700nm is adopted in the invention, can be applied to nonlinear optical devices, and has larger bandwidth compared with the traditional silicon-on-insulator platform; the preparation process is completely compatible with the CMOS process, has lower cost and can be applied to mass production.
2. The double-layer grating structure can obviously improve the directivity of emergent light, thereby achieving high coupling efficiency.
3. The second silicon nitride grating layer in the invention adopts apodization treatment, so that the mode matching degree of the upward coupling field and the intrinsic field of the standard single-mode fiber can be improved, and the coupling efficiency can be improved.
4. The bottom reflecting layer positioned between the lower cladding layer and the substrate is introduced, so that light leaked to the bottom substrate can be reflected back, leakage loss is reduced, and the coupling efficiency of the device is further improved.
Drawings
Other features as well as advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for the purpose of further detailed description of preferred embodiments and are not to be taken in a limiting sense.
FIG. 1 is a schematic cross-sectional view of a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer according to an embodiment of the present invention;
FIG. 3 is a schematic three-dimensional diagram of a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram showing the overlap integration of a mode field at 1550 and nm wavelengths and a single mode fiber mode field of a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the coupling efficiency of a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer in a wavelength band near 1550 and nm according to an embodiment of the present invention;
FIG. 6 is a graph showing the power distribution of light emitted from a dual-layer silicon nitride grating coupler integrated with a bottom reflective layer at 1550nm according to an embodiment of the present invention;
description of the embodiments
The following describes embodiments of the present invention in detail: the embodiment is implemented on the premise of the technical scheme of the invention, and detailed implementation modes and specific operation processes are given. It is obvious that the drawings of the specific embodiments described below are only representative embodiments of the present invention, not exclusive, and that it is possible for those skilled in the art to obtain other drawings from the drawings of the present embodiment without performing inventive work, and to obtain other embodiments, all of which are obtained without making inventive work, that are within the scope of the present invention.
It should be noted that, in the case of no conflict, the embodiments and the features of each part in the embodiments may be combined with each other; the invention may be practiced or carried out in different embodiments, and details in this description may be modified or varied from various points of view and applications without departing from the spirit of the invention. A preferred embodiment of the present application will be described in detail with reference to the accompanying drawings.
A double-layer silicon nitride grating coupler integrated with a bottom reflecting layer comprises an oxide upper cladding layer, a silicon nitride grating coupler layer, an oxide lower cladding layer, a bottom reflecting layer and a substrate layer from top to bottom; the silicon nitride grating coupler layer comprises a second silicon nitride grating layer positioned above, a silicon dioxide interlayer and a first silicon nitride grating layer positioned below, wherein the two layers of gratings are completely embedded in the upper and lower oxide cladding layers, and have fixed intervals in the horizontal and vertical directions. The first silicon nitride grating layers are uniformly arranged at a certain period and a filling duty ratio; in order to improve the matching degree of the upward radiation field mode and the intrinsic mode of the standard single mode fiber, the second silicon nitride grating layer adopts apodization treatment. The double-layer grating design can realize high directivity and inhibit side lobes. The bottom reflective layer adopts a multilayer distributed Bragg reflection design, effectively prevents the light field coupled downwards from leaking to the substrate, and has the coupling efficiency of about 79% and the bandwidth of 1dB of about 117 nm for light in the quasi-TE polarization mode.
The oxide upper cladding is positioned at the uppermost end of the whole device and is close to a standard single mode fiber in operation; a first silicon nitride grating layer is deposited over the oxide lower cladding layer, followed by a silicon dioxide interlayer, and then a second silicon nitride grating layer is deposited; a bottom reflective layer is deposited between the substrate and the oxide lower cladding layer for reflecting light leaking to the substrate layer upward; the substrate layer is used for supporting and bearing the bottom reflecting layer, the oxide lower cladding layer, the silicon nitride grating coupler layer and the oxide upper cladding layer.
The optical signal to be output enters from the silicon nitride waveguide at the incidence end, enters the grating coupler layer after passing through the taper, the standard single-mode optical fiber is tightly attached to the oxide upper cladding of the chip, and the optical fiber receives the optical signal emitted upwards from the grating coupler; according to the grating diffraction theory, the period, the duty ratio and the thickness of the first silicon nitride grating layer and the second silicon nitride grating layer are changed, the direction and the intensity of the coupled light signals can be regulated and controlled, and the directivity of emergent light and the suppression of side lobes are improved.
Specifically, the dual layer silicon nitride grating coupler integrating the bottom reflective layer operates in a quasi-TE polarization mode.
Specifically, the material of the incident waveguide and the tip is consistent with that of the silicon nitride grating coupler layer, the thickness of the incident waveguide and the tip is equal to that of the first silicon nitride grating layer, a complex mode conversion structure is not needed, the initial end of the tip is connected with the final end of the incident waveguide, and the final end of the tip is connected with the initial end of the first silicon nitride grating layer.
In one possible implementation manner, the materials of the oxide upper cladding layer and the oxide lower cladding layer are silicon dioxide, the refractive index of the silicon dioxide upper cladding layer and the silicon nitride lower cladding layer should be smaller than that of the silicon nitride grating layer, and the thicknesses of the oxide upper cladding layer and the oxide lower cladding layer should be greater than or equal to 2.5 mu m.
In one possible implementation, the first silicon nitride grating layer is a full etch process with a grating thickness greater than or equal to 700 a/nm a.
Specifically, the first silicon nitride grating layer is a uniform grating, and the uniform grating refers to that each silicon nitride strip forming the grating has the same width and period in the whole grating.
In one possible implementation, the second silicon nitride grating layer is a full etch process with a grating thickness greater than or equal to 500 a nm a.
In particular, the second silicon nitride grating layer is an apodized grating, which means that each silicon nitride stripe constituting the grating has a different width and period throughout the entire grating.
In one possible implementation, the vertical spacing between the first and second silicon nitride grating layers ranges from 50nm to 150 nm.
In one possible implementation, the bottom reflective layer is formed by alternately depositing a high refractive index material (silicon nitride) and a low refractive index material (silicon dioxide) between the oxide lower cladding layer and the substrate layer, and the thickness of the thin layers of the two materials ranges from 100 nm to 350 nm.
In one possible implementation, the substrate layer is made of silicon.
As shown in fig. 1, this example provides a high coupling efficiency double layer silicon nitride grating coupler integrated with a bottom reflective layer, comprising a substrate layer 10, a bottom reflective layer 20, an oxide lower cladding layer 30, a first silicon nitride grating layer 401, a second silicon nitride grating layer 402, an oxide upper cladding layer 50, and a standard single mode fiber 60 over a chip.
The substrate layer 10 in fig. 1 is made of silicon and serves as a support for the entire chip structure; on the substrate layer, silicon dioxide (low refractive index) thin layers and silicon nitride (high refractive index) thin layers are alternately deposited, and a group of thin layers with different refractive index materials are alternately deposited to form a distributed Bragg reflection layer. In the preferred embodiment, the bottom reflective layer 20 is a three layer distributed Bragg reflective layer, wherein the thickness of the thin silicon dioxide layer and the thin silicon nitride layer in each layer is in the range of 100 nm-350 nm; the oxide under-cladding layer 30 is made of silicon dioxide, and has a thickness that will have a periodic effect on the optical coupling field, and in the preferred embodiment, the thickness of the oxide under-cladding layer is selected to be 2.75 μm; a first silicon nitride grating layer 401 is deposited on the oxide lower cladding layer 30, the first silicon nitride grating layer 401 is a uniform grating, wherein the uniform grating comprises 11 silicon nitride grating strips with the same period and width, and the tip end is positioned at the left end of the 1 st silicon nitride grating strip of the first silicon nitride grating layer; the interval between the lower bottom end of the second silicon nitride grating layer 402 and the upper top end of the first silicon nitride grating layer 401 is 50 nm-150 nm, and the first and second silicon nitride grating layers are all filled with oxide interlayers; the second silicon nitride grating layer 402 is an apodized grating, i.e., each grating stripe has a different period and width; the bottom end of the oxide upper cladding layer 50 is connected to the top end of the first silicon nitride grating layer 401, and in this preferred embodiment, the thickness of the oxide upper cladding layer 50 is selected to be 3.3 μm; the standard single mode fiber 60 is adjacent to the upper surface of the oxide upper cladding layer 50.
As a preferred embodiment, as shown in fig. 1, the thicknesses of the first silicon nitride grating layer 401 and the second silicon nitride grating layer 402 are consistent, in this preferred embodiment, 800 nm, and the spacing between the first and second silicon nitride grating layers in the vertical direction (y-direction) is 100 nm, and the displacement in the horizontal direction (x-direction) is 345 nm. Two layers of silicon nitride gratings with certain intervals in the horizontal direction and the vertical direction form an array, so that the directivity of optical field coupling can be remarkably improved.
As a preferred embodiment, as shown in fig. 1, the grating strips of the first silicon nitride grating layer 401 and the second silicon nitride grating layer 402 are rectangular.
Specifically, the bottom reflective layer 20 described in the preferred embodiment is formed as a distributed Bragg reflective layer using alternating deposition of thin layers of 180 a nm a silicon nitride and 320nm silicon dioxide. Theoretically, the more reflective layers are deposited, the higher the coupling efficiency, and in this preferred embodiment, the three-layer distributed Bragg reflection layer design is adopted for the sake of manufacturing simplicity and high reflectivity.
As a preferred embodiment, as shown in FIG. 1, the bottom reflective layer 20 is deposited between the oxide lower cladding layer 30 and the substrate layer 10, and is effective to reflect light coupled down by the grating coupler, thereby improving the coupling efficiency of the coupler.
Fig. 2 is a schematic top view of a double layer silicon nitride grating coupler integrated with a bottom reflective layer, where 10 denotes an incident silicon nitride optical waveguide, 20 denotes a tip, and 30 denotes a double layer silicon nitride grating.
As a preferred embodiment, as shown in fig. 2, the width of the incident silicon nitride waveguide 10 is 1.8 μm, and the width of the double-layer silicon nitride grating is 20 μm, and if the incident silicon nitride waveguide 10 is directly connected to the double-layer silicon nitride grating 30, a large mode mismatch is caused due to the large size of the width; in the preferred embodiment, a tip 20 is used as a mode spot converter, and the tip 20 is connected after the incident silicon nitride waveguide 10; the tip 20 has a starting width of 1.8 μm, a terminal width of 20 μm and a length of 100 μm, and is an isosceles trapezoid in plan view; the end of the tip 20 is connected to a first silicon nitride grating layer as shown in fig. 1.
The quasi-TE polarized light in the silicon nitride chip enters from the incident silicon nitride waveguide 10, after passing through the taper 20, the light mode entering the double-layer silicon nitride grating is the fundamental mode, and finally the input light is upwards coupled into the standard single-mode fiber through the double-layer grating coupler.
Fig. 3 is a three-dimensional schematic diagram of a dual layer silicon nitride grating coupler incorporating a bottom reflective layer.
Fig. 4 shows an overlap integration of a mode field of 1550nm wavelength and a mode field of a single-mode fiber of a double-layer silicon nitride grating coupler integrated with a bottom reflection layer, where the matching degree of the two mode fields reaches 88%.
Fig. 5 shows the coupling efficiency simulation results at 1550nm and nearby bands for this preferred embodiment. The coupling efficiency peaks at 1550nm, approximately 79%; the device 1dB bandwidth reaches 117 nm.
Fig. 6 shows the output light field intensity profile at 1550nm for this preferred embodiment, with a coupling angle of 24 °. Most of the light is coupled upward and the light losses in other directions are less.
In the embodiment, the silicon nitride grating with the thickness of 800-nm is adopted, a double-layer structure is introduced to form a grating array, and a distributed Bragg reflector is added between the lower cladding and the substrate, so that the coupling efficiency is further improved. The simulation is carried out by combining finite time domain difference software, and meanwhile, the limit of the minimum processing line width in the actual CMOS process is considered, so that the structure and the geometric parameters of the double-layer silicon nitride grating coupler are optimized. The double-layer silicon nitride grating coupler integrated with the bottom reflecting layer, which is obtained by the invention, can obtain higher coupling efficiency and wider bandwidth, can be applied to the fields of optical communication, microwave photons and the like, and has outstanding performance.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the preferred embodiments. Even if various changes are made to the present invention, it is still protected by the present invention provided that such changes remain within the scope of the appended claims and their equivalents.
Claims (9)
1. The double-layer silicon nitride grating coupler integrated with the bottom reflecting layer is characterized by comprising an oxide upper cladding layer, a second silicon nitride grating layer, an oxide interlayer, a first silicon nitride grating layer, an oxide lower cladding layer, a bottom reflecting layer and a substrate layer which are sequentially stacked from top to bottom.
2. The dual-layer silicon nitride grating coupler of claim 1, wherein the upper oxide cladding layer, the interlayer oxide layer and the lower oxide cladding layer are made of silicon dioxide, the refractive index of the silicon dioxide is smaller than that of the first silicon nitride grating layer, and the thicknesses of the upper oxide cladding layer and the lower oxide cladding layer are not smaller than 2.5 μm.
3. The dual layer silicon nitride grating coupler of claim 1, wherein the first silicon nitride grating layer is formed by a full etch process and has a grating thickness greater than or equal to 700 a/nm a.
4. A dual layer silicon nitride grating coupler according to claim 3, wherein said first silicon nitride grating layer is a uniform grating, meaning that each grating stripe has the same width and period throughout the grating.
5. The dual layer silicon nitride grating coupler of claim 1, wherein the second silicon nitride grating layer is formed by a full etch process, and the grating thickness is greater than or equal to 500 a nm a.
6. The dual layer silicon nitride grating coupler of claim 5, wherein the second silicon nitride grating layer is an apodized grating, wherein each grating stripe has a different width and period throughout the grating, and wherein the vertical spacing between the first silicon nitride grating layer and the second silicon nitride grating layer is in the range of 50 nm-150 nm.
7. A dual layer silicon nitride grating coupler according to any of claims 1-6, wherein the bottom reflective layer is formed by alternating deposition of high and low index material layers, the high and low index layers having thicknesses ranging from 100 nm to 350 nm; the high refractive index material layer is silicon nitride, and the low refractive index material layer is silicon dioxide.
8. The dual layer silicon nitride grating coupler of claim 7, wherein the substrate layer is silicon.
9. The dual layer silicon nitride grating coupler of claim 8, further comprising an incident waveguide and a tapered waveguide, the incident waveguide and the tapered waveguide being of a material consistent with the material of the first silicon nitride grating layer, the thickness of the incident waveguide and the tapered waveguide being equal to the thickness of the first silicon nitride grating layer, the beginning of the tapered waveguide being connected to the end of the incident waveguide and the end of the tapered waveguide being connected to the beginning of the first silicon nitride grating layer without additional mode conversion structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310161920.0A CN116165742A (en) | 2023-02-24 | 2023-02-24 | Double-layer silicon nitride grating coupler integrated with bottom reflecting layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310161920.0A CN116165742A (en) | 2023-02-24 | 2023-02-24 | Double-layer silicon nitride grating coupler integrated with bottom reflecting layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116165742A true CN116165742A (en) | 2023-05-26 |
Family
ID=86416152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310161920.0A Pending CN116165742A (en) | 2023-02-24 | 2023-02-24 | Double-layer silicon nitride grating coupler integrated with bottom reflecting layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116165742A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116859521A (en) * | 2023-08-30 | 2023-10-10 | 之江实验室 | Grating coupler and preparation method thereof |
| CN117250697A (en) * | 2023-11-17 | 2023-12-19 | 中国科学院半导体研究所 | High-efficiency grating coupler |
-
2023
- 2023-02-24 CN CN202310161920.0A patent/CN116165742A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116859521A (en) * | 2023-08-30 | 2023-10-10 | 之江实验室 | Grating coupler and preparation method thereof |
| CN116859521B (en) * | 2023-08-30 | 2024-01-09 | 之江实验室 | Grating coupler and preparation method thereof |
| CN117250697A (en) * | 2023-11-17 | 2023-12-19 | 中国科学院半导体研究所 | High-efficiency grating coupler |
| CN117250697B (en) * | 2023-11-17 | 2024-03-01 | 中国科学院半导体研究所 | High-efficiency grating coupler |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116165742A (en) | Double-layer silicon nitride grating coupler integrated with bottom reflecting layer | |
| CN108398842B (en) | Optical phased array chip based on serial optical antenna | |
| CN111175896A (en) | High-efficiency grating coupler with large bandwidth | |
| US20140308004A1 (en) | Grating edge coupler and method of forming same | |
| US20110038588A1 (en) | Optical coupler | |
| US10317584B2 (en) | Grating coupler and preparation method | |
| CN110824612B (en) | Three-dimensional optical connection structure of multilayer silicon photon | |
| CN102156324B (en) | Mode converter having multi-layer structure and optical branching device | |
| CN109324372B (en) | Silicon optical waveguide end face coupler | |
| CN114815056B (en) | Sandwich efficient emission grating antenna based on staggered offset and manufacturing method thereof | |
| CN112230339A (en) | Grating coupler and preparation method thereof | |
| CN216485897U (en) | Waveguide array and integrated optical phased array chip | |
| CN115857091A (en) | MMI polarization beam splitter of lithium niobate thin film | |
| CN103645540A (en) | Etched diffraction grating-type wavelength division multiplexing/demultiplexing device | |
| US20210141251A1 (en) | Active region-less modulator and method | |
| CN112649918B (en) | Edge coupler | |
| CN202870343U (en) | Reflecting type array waveguide grating based on multiple-mode interferometer reflector | |
| CN115144964B (en) | Silicon-based array waveguide grating based on Euler bending wide waveguide | |
| CN113126217A (en) | Optical transmitter-receiver device, preparation method of optical transmitter-receiver device and optical communication equipment | |
| CN214954215U (en) | Convex self-enhanced focusing coupling grating coupler | |
| CN115616703A (en) | Grating coupler based on double-layer silicon nitride structure and manufacturing method thereof | |
| CN115210617A (en) | High-efficiency end-fire type 3D optical phased array based on multilayer platform | |
| CN115201970B (en) | Silicon-based optical chip with grating coupler | |
| CN111999913A (en) | Thermo-optic phase shifter | |
| CN220064425U (en) | Photonic integrated circuit chip and silicon optical integrated platform |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |