CN207788622U - Polishing pressure buffer pad and burnishing device - Google Patents
Polishing pressure buffer pad and burnishing device Download PDFInfo
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- CN207788622U CN207788622U CN201721748747.0U CN201721748747U CN207788622U CN 207788622 U CN207788622 U CN 207788622U CN 201721748747 U CN201721748747 U CN 201721748747U CN 207788622 U CN207788622 U CN 207788622U
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- polishing
- buffer pad
- pressure buffer
- pressure
- thickness
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Abstract
The utility model provides polishing pressure buffer pad and burnishing device, is related to polishing technology field.It is related to polishing pressure buffer pad, including pressure buffer pad, pressure buffer pad is provided with glue-line on one side, and the another side of pressure buffer pad is arranged at intervals with multiple pressure conduction regions；Pressure buffer pad is fixed by glue-line and polishing disk or grinding head for polishing.It is related to burnishing device, is provided with above-mentioned polishing pressure buffer pad, which can pastes with polishing disk, can also be pasted with grinding head for polishing；Pressure buffer pad is arranged between polishing disk and grinding head for polishing, for pressure conduction between the two；Polished wafer is arranged in the template below polishing disk.Using the technical solution of the utility model, it can be attached to the back side of pressure disc, the pressure born above is distributed by the thickness change of cushion pad, wafer is enable more uniformly to be pressed on deep bid, to make polishing be smoothed out.
Description
Technical field
The utility model is related to polishing technology fields, more particularly, to polishing pressure buffer pad and burnishing device.
Background technology
Chemically mechanical polishing (CMP) technology is one of the key technology of semiconductor wafer surface processing, in integrated circuit system
It makes in each stage surface planarization process of process and the processing of surface polishing of large scale bare silicon wafer and is used widely.Chemical machine
The process of tool polishing, mainly by the effect of polishing pad, polishing fluid and selected chemical reagent from wafer substrate material removal
Process.
In this process, polishing template, pressure disc, pressure bistrique, the devices such as deep bid constitute the main place of polishing,
It wherein throws cloth to be attached on deep bid, polishing template is pressed in wafer and throws above cloth, and with the rotation of ramming head and deep bid, crystal column surface exists
It can be removed by the villus on throwing cloth after being polished liquid effect, it is final to realize polishing.It is brilliant but when polishing some special wafers
The thickness of circular surfaces is not equally distributed, has plenty of edge thickness, intermediate thin, some be then on the contrary, in this case, it is pure flat
After the template and pressure disc of design are pressed in wafer on deep bid, pressure suffered by the edge of wafer and centre will difference compared with
Greatly, cause among wafer and the removal effect at edge is inconsistent, increase the time of polishing, even result in polishing failure.
In consideration of it, there is an urgent need to a kind of structures that can improve polishing efficiency.
The information for being disclosed in the background technology part is merely intended to deepen the reason to the general background technology of the utility model
Solution, and it is known to those skilled in the art existing to be not construed as recognizing or imply that the information is constituted in any form
Technology.
Utility model content
The first of the utility model is designed to provide a kind of polishing pressure buffer pad, can be attached to the back of the body of pressure disc
Face distributes the pressure born above by the thickness change of cushion pad, wafer is enable more uniformly to be pressed on deep bid, from
And polishing is made to be smoothed out.
A kind of polishing pressure buffer pad provided by the utility model, including pressure buffer pad, the pressure buffer pad one
Face is provided with glue-line, and the another side of the pressure buffer pad is arranged at intervals with multiple pressure conduction regions；
The pressure buffer pad is fixed by the glue-line with polishing disk or grinding head for polishing.
In any of the above-described technical solution, further, the pressure conduction region is bulge-structure, the bulge-structure
Inside it is provided with one or more of air cushion, hydraulic die cushion or pressure sensor.
In any of the above-described technical solution, further, the thickness range of the pressure buffer pad is 100um~10mm.
In any of the above-described technical solution, further, the centre position thickness of the pressure buffer pad is more than side
Edge position thickness；
Alternatively, the centre position thickness of the pressure buffer pad is less than marginal position thickness；
Alternatively, one side thickness of the pressure buffer pad is less than another side thickness；
Alternatively, the centre of the pressure buffer pad and the thickness at edge are less than the thickness of transitional region between the two
Size；
Alternatively, the centre of the pressure buffer pad and the thickness at edge are more than the thickness of transitional region between the two
Size.
In any of the above-described technical solution, further, the pressure buffer pad be it is rectangular, round, oval, annular or
One in flakes structure.
In any of the above-described technical solution, further, the pressure conduction region is hollow out or half engraved structure, by institute
Pressure conduction region segmentation is stated into multiple independent pressure conduction regions.
In any of the above-described technical solution, further, the glue-line is one kind in hot melt adhesive, pressure sensitive adhesive, UV glue.
The second of the utility model is designed to provide a kind of burnishing device, is provided with above-mentioned polishing pressure buffer
Pad, distributes the pressure born above by the thickness change of cushion pad, wafer is enable more uniformly to be pressed on deep bid, from
And polishing is made to be smoothed out.
A kind of burnishing device provided by the utility model, including above-mentioned polishing pressure buffer pad, further include polishing disk,
Polished wafer, grinding head for polishing；
The pressure buffer pad is pasted onto by glue-line on the polishing disk, alternatively, the pressure buffer pad passes through glue-line
It is pasted onto on the grinding head for polishing；
The pressure buffer pad is arranged between the polishing disk and the grinding head for polishing, is passed for pressure between the two
It leads；
Polished wafer is arranged in the template below polishing disk.
In any of the above-described technical solution, further, the polishing disk is pressed in above deep bid by the grinding head for polishing
It throws on cloth.
In any of the above-described technical solution, further, the pressure buffer pad is contacted with the grinding head for polishing, polishing pressure
Power is applied to by the pressure buffer pad in the template below the polishing disk.
The beneficial effects of the utility model are as follows：
Using the polishing pressure buffer pad of the utility model, including pressure buffer pad, the pressure buffer pad is set on one side
It is equipped with glue-line, the another side of the pressure buffer pad is arranged at intervals with multiple pressure conduction regions；The pressure buffer pad passes through
The glue-line is fixed with polishing disk or grinding head for polishing.Wherein, the material of polishing pressure buffer pad generally use epoxy resin board,
Polyurethane material, PVC, PP etc., in use, pressure buffer pad pastes together with polishing disk or grinding head for polishing, main function
It is that indeformable either Light deformation can keep the shape or thickness of pressure buffer advance capital for body when grinding head for polishing gives pressure
Degree distribution, enables pressure to be evenly dispersed or is transmitted to following polishing disk according to the design requirement of pressure buffer advance capital for body
On.
Using the burnishing device of the utility model, including above-mentioned polishing pressure buffer pad, further includes polishing disk, waits throwing
Light wafer, grinding head for polishing；The pressure buffer pad is pasted onto by glue-line on the polishing disk, alternatively, the pressure buffer pad
It is pasted onto on the grinding head for polishing by glue-line；Pressure buffer pad setting the polishing disk and the grinding head for polishing it
Between, for pressure conduction between the two；Polished wafer is arranged in the template below polishing disk.Using the utility model
It is provided with polishing pressure buffer pad, can fundamentally solve the problems, such as that pressure conduction is non-uniform, that is, pass through pressure buffer pad
Thickness change and the pressure conduction region that is arranged thereon distribute the pressure born above, so that wafer is more uniformly pressed
On deep bid, to make polishing be smoothed out.
When being polished using above-mentioned burnishing device, compared with the prior art compared with being additionally arranged polishing pressure buffer
Pad pastes the process on polishing disk or grinding head for polishing, when being polished, for the wafer of different-thickness distribution, passes through change
The shape and thickness of pressure buffer pad can enable wafer uniformly to be thrown uniformly the surface of pressure conduction to wafer
Light considerably increases the wear intensity of equipment.
Description of the drawings
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art
Specific implementation mode or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below
In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art
Under the premise of labour, other drawings may also be obtained based on these drawings.
Fig. 1 is the main structure diagram for the polishing pressure buffer pad that the utility model embodiment one provides；
Fig. 2 is that cross-section structure of the polishing pressure buffer pad that provides of the utility model embodiment one along its middle section is illustrated
Figure；
Fig. 3 is the structural representation with engraved structure for the polishing pressure buffer pad that the utility model embodiment one provides
Figure one；
Fig. 4 is the structural representation with engraved structure for the polishing pressure buffer pad that the utility model embodiment one provides
Figure two；
Fig. 5 is the structural representation with engraved structure for the polishing pressure buffer pad that the utility model embodiment one provides
Figure three；
Fig. 6 is the structural representation with engraved structure for the polishing pressure buffer pad that the utility model embodiment one provides
Figure four；
Fig. 7 is that the mounting structure of grinding head for polishing and polishing disk is illustrated in the burnishing device that the utility model embodiment two provides
Figure；
In the burnishing device that Fig. 8 provides for the utility model embodiment two between pressure buffer pad and polishing disk, wafer
Mounting structure schematic diagram；
Fig. 9 is the structural schematic diagram between grinding head for polishing, throwing cloth and the deep bid that the utility model embodiment one, two provides.
Reference numeral：
100- pressure buffer pads；200- burnishing devices；
101- pressure conductions region；102- grooves；103- glue-lines；
201- throws cloth；202- deep bids；203- grinding head for polishing；
301- polishing disks；302- wafers.
Specific implementation mode
The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described
Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally
The every other embodiment that field those of ordinary skill is obtained without making creative work, belongs to this practicality
Novel protected range.
It is in the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
The utility model and simplifying describes for ease of description, do not indicate or imply the indicated device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the present invention.In addition, term " the
One ", " second " is used for description purposes only, and is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection.For the ordinary skill in the art, the tool of above-mentioned term in the present invention can be understood with concrete condition
Body meaning.
The technology of polishing the pressure buffer pad and burnishing device of the present embodiment 1,2 is described in detail below with reference to Fig. 1-Fig. 9
Scheme.
Embodiment one
The specific implementation mode of the present embodiment is as follows：
As shown in figures 1 to 6, it is polishing pressure buffer pad 100 provided in this embodiment, polishing pressure buffer pad
100 include pressure buffer pad 100, and pressure buffer pad 100 is provided with glue-line 103, another face interval of pressure buffer pad 100 on one side
It is provided with multiple pressure conduction regions 101；Pressure buffer pad 100 is solid by glue-line 103 and polishing disk 301 or grinding head for polishing 203
It is fixed.
It should be noted that the pressure buffer pad 100 of the present embodiment is using epoxy resin board, polyurethane material, PVC, PP
One or more materials in are made, and main function is indeformable or micro- when grinding head for polishing 203 gives pressure
Deformation, can keep pressure buffer pad 100 shape of itself either thickness distribution enable pressure be evenly dispersed or according to
The design requirement of of pressure buffer pad 100 itself is transmitted on following polishing disk 301；Pressure buffer pads 100 thickness ranges
100um to 10mm；Shape can be rectangular, ellipse or annular etc. according to the change in shape of polishing disk 301.
The alternative of the technical program is that pressure conduction region 101 is bulge-structure, and gas is provided in bulge-structure
One or more of pad, hydraulic die cushion or pressure sensor.
It should be noted that the polishing of the present embodiment is with being provided with multiple pressure conduction regions on pressure buffer pad 100
101, which is divided by groove 102, forms multiple bulge-structures, is being thrown convenient for the pressure buffer pad 100
The pressure between polishing disk 301 and grinding head for polishing 203 is carried in photoreduction process, to realize uniform pressure distribution.
The alternative of the technical program is that the thickness range of pressure buffer pad 100 is 100um~10mm.
It should be noted that the pressure between polishing disk 301 and grinding head for polishing 203 can be convenient for pass using this thickness range
It leads, while not influencing the progress of the polishing of wafer 302 again.
The alternative of the technical program is that the centre position thickness of pressure buffer pad 100 is more than marginal position thickness
Spend size；Alternatively, the centre position thickness of pressure buffer pad 100 is less than marginal position thickness；Alternatively, pressure buffer
One side thickness of pad 100 is less than another side thickness；Alternatively, the centre of pressure buffer pad 100 and the thickness gauge at edge
The very little thickness for being less than transitional region between the two；Alternatively, the centre of pressure buffer pad 100 and the thickness at edge are big
In the thickness of transitional region between the two.
It should be noted that the thickness distribution of pressure buffer pad 100 is according to polishing demand, can be thick middle, thin edge；
According to the demand of polishing product, thickness distribution can also be intermediate thin, and edge is thick；Or Hou on one side thin while；Or it is intermediate
All thin with edge, some annular region is thick；Or intermediate and edge is all thick, some annular region is thin；To be conducive to pressure buffer
The use of the pressure conduction in polishing process of pad 100.
The alternative of the technical program is that pressure buffer pad 100 is rectangular, round, oval, annular or flakes knot
One in structure.
It should be noted that the shape of pressure buffer pad 100 is not limited only to the shape of rule, can also be that other are random
Figure, for example, Fig. 3 snowflake shape, make 301 edge of polishing disk with centre receive the area distributions of cushion pad it is different, reach pressure
The purpose of distribution.
It should be pointed out that when the pressure buffer pad 100 of the present embodiment is round, the diameter of the pressure buffer pad 100
It is arranged between 5mm to 500mm, is convenient for the progress of polishing process, realizes the feasibility of pressure conduction.
The alternative of the technical program is that pressure conduction region 101 is hollow out or half engraved structure, by pressure conduction area
Domain 101 is divided into multiple independent pressure conduction regions 101.
It should be noted that can have hollow out or half hollow out figure inside pressure buffer pad 100, which delays pressure
100 surfaces of punching pad are divided into different regions, each region can conduction of the complete independently to pressure, such as Fig. 3-Fig. 6 knot
Structure.
The alternative of the technical program is that glue-line 103 is one kind in hot melt adhesive, pressure sensitive adhesive, UV glue.
It should be noted that pressure buffer, which pads 100 back sides, glue-line 103, i.e. glued membrane, which can be such that it pastes to throw
301 top of CD or the lower section of grinding head for polishing 203, reach fixed purpose；The glued membrane can be hot melt adhesive, pressure sensitive adhesive, UV glue
Deng the purpose is to enable cushion pad to be fixed on polishing disk 301 and can be by the removing of noresidue.
Using the polishing pressure buffer pad 100 of the present embodiment, including pressure buffer pad 100,100 one side of pressure buffer pad
It is provided with glue-line 103, the another side of pressure buffer pad 100 is arranged at intervals with multiple pressure conduction regions 101；Pressure buffer pad
100 are fixed by glue-line 103 and polishing disk 301 or grinding head for polishing 203.Wherein, polishing is general with the material of pressure buffer pad 100
Using epoxy resin board, polyurethane material, PVC, PP etc., in use, pressure buffer pad 100 and polishing disk 301 or grinding head for polishing
203 paste together, and main function is indeformable when grinding head for polishing 203 gives pressure or Light deformation, Neng Goubao
Holding pressure buffer pad 100 shape of itself, either thickness distribution enables pressure to be evenly dispersed or according to pressure buffer pad
100 design requirements of itself are transmitted on following polishing disk 301.
Embodiment two
A kind of burnishing device 200 provided in this embodiment, including above-mentioned polishing pressure buffer pad 100 further include throwing
CD 301, polished wafer 302, grinding head for polishing 203；Pressure buffer pad 100 is pasted onto by glue-line 103 on polishing disk 301,
Alternatively, pressure buffer pad 100 is pasted onto by glue-line 103 on grinding head for polishing 203；Pressure buffer pad 100 is arranged in polishing disk 301
Between grinding head for polishing 203, for pressure conduction between the two；The mould below polishing disk 301 is arranged in polished wafer 302
In plate.Polishing pressure buffer pad 100 is provided with using the utility model, it is uneven can fundamentally to solve pressure conduction
The problem of, that is, it is held above by the thickness change of pressure buffer pad 100 and the pressure conduction region 101 being arranged thereon to distribute
The pressure received enables wafer 302 to be more uniformly pressed on deep bid 202, to make polishing be smoothed out.
The alternative of the present embodiment is that polishing disk 301 is pressed in the throwing cloth 201 above deep bid 202 by grinding head for polishing 203
On.
The alternative of the present embodiment is that pressure buffer pad 100 is contacted with grinding head for polishing 203, and polish pressure passes through pressure
Cushion pad 100 is applied in the template of 301 lower section of polishing disk.
Using the present embodiment burnishing device when, the polishing process of progress is as follows：
Step A designs a kind of polishing pressure buffer pad 100 of embodiment one；
Step B, the one side and 301 top of polishing disk that glue-line 103 is provided on pressure buffer pad 100 bond, alternatively, pressure
The one side and 203 lower adhesive of grinding head for polishing of glue-line 103 are provided on cushion pad 100, that is, the pressure buffer pad 100 setting exists
Between grinding head for polishing 203 and polishing disk 301, for pressure conduction between the two；
When polishing, the one side with pressure buffer pad 100 is contacted with grinding head for polishing 203 by step C, keeps polish pressure logical
Excess pressure cushion pad 100 is applied in the template of 301 lower section of polishing disk.
The alternative of the technical program be further include step D, as shown in figure 8, being provided with polished wafer in the template
302, polishing disk 301 is pressed on the throwing cloth 201 above deep bid 202 by grinding head for polishing 203.
It should be noted that pressure buffer pad 100 is pasted by mucous membrane the top of polishing disk 301, polished wafer
302 inside the template of the lower section of polishing disk 301；The pressure buffer pad 100 can also be posted under grinding head for polishing 203
Side, main function is to play the role of pressure conduction between grinding head for polishing 203 and polishing disk 301；When polishing, band
There is the one side of pressure buffer pad 100 to be contacted with grinding head for polishing 203, so that polish pressure is passed through cushion pad and be applied in template；Polishing
When one side of the polishing disk 301 with pressure buffer pad 100 contacted with grinding head for polishing 203, formed with an entirety, while polished
Wafer 302 is stuck in inside the template of 301 lower section of polishing disk；As shown in figure 9, polishing disk 301 is pressed in deep bid by grinding head for polishing 203
Polishing operation is carried out on throwing cloth 201 above 202.
Using the burnishing device of the present embodiment, compared with the prior art compared with being additionally arranged and glue polishing pressure buffer pad 100
The process being attached on polishing disk 301 or grinding head for polishing 203, for the wafer 302 of different-thickness distribution, is led to when being polished
Wafer can be made uniformly pressure conduction to the surface of wafer 302 by crossing the shape for changing pressure buffer pad 100 and thickness
302 can uniformly be polished, and the wear intensity of equipment is considerably increased.
Finally it should be noted that：The above various embodiments is only to illustrate the technical solution of the utility model, rather than limits it
System；Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should
Understand：It still can be with technical scheme described in the above embodiments is modified, either to which part or whole
Technical characteristic carries out equivalent replacement；And these modifications or replacements, this practicality that it does not separate the essence of the corresponding technical solution are new
The range of each embodiment technical solution of type.
Claims (10)
1. a kind of polishing pressure buffer pad, which is characterized in that including pressure buffer pad, the pressure buffer pad is provided on one side
The another side of glue-line, the pressure buffer pad is arranged at intervals with multiple pressure conduction regions；
The pressure buffer pad is fixed by the glue-line with polishing disk or grinding head for polishing.
2. polishing according to claim 1 pressure buffer pad, which is characterized in that the pressure conduction region is that protrusion is tied
Structure is provided with one or more of air cushion, hydraulic die cushion or pressure sensor in the bulge-structure.
3. polishing according to claim 2 pressure buffer pad, which is characterized in that the thickness range of the pressure buffer pad
For 100um~10mm.
4. polishing according to claim 3 pressure buffer pad, which is characterized in that the centre position of the pressure buffer pad
Thickness is more than marginal position thickness；
Alternatively, the centre position thickness of the pressure buffer pad is less than marginal position thickness；
Alternatively, one side thickness of the pressure buffer pad is less than another side thickness；
Alternatively, the centre of the pressure buffer pad and the thickness at edge are less than the thickness gauge of transitional region between the two
It is very little；
Alternatively, the centre of the pressure buffer pad and the thickness at edge are more than the thickness gauge of transitional region between the two
It is very little.
5. polishing according to claim 3 pressure buffer pad, which is characterized in that the pressure buffer pad is rectangular, circle
One in shape, ellipse, annular or flakes structure.
6. polishing according to claim 1 pressure buffer pad, which is characterized in that the pressure conduction region be hollow out or
Half engraved structure, by the pressure conduction region segmentation at multiple independent pressure conduction regions.
7. polishing according to claim 5 pressure buffer pad, which is characterized in that the glue-line be hot melt adhesive, pressure sensitive adhesive,
One kind in UV glue.
8. a kind of burnishing device, which is characterized in that including the claims 1-7 any one of them polishing pressure buffers
Pad, further includes polishing disk, polished wafer, grinding head for polishing；
The pressure buffer pad is pasted onto by glue-line on the polishing disk, alternatively, the pressure buffer pad is pasted by glue-line
On the grinding head for polishing；
The pressure buffer pad is arranged between the polishing disk and the grinding head for polishing, for pressure conduction between the two；
Polished wafer is arranged in the template below polishing disk.
9. burnishing device according to claim 8, which is characterized in that the polishing disk is pressed in deep bid by the grinding head for polishing
On throwing cloth above.
10. burnishing device according to claim 8, which is characterized in that the pressure buffer pad connects with the grinding head for polishing
It touches, polish pressure is applied to by the pressure buffer pad in the template below the polishing disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721748747.0U CN207788622U (en) | 2017-12-14 | 2017-12-14 | Polishing pressure buffer pad and burnishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721748747.0U CN207788622U (en) | 2017-12-14 | 2017-12-14 | Polishing pressure buffer pad and burnishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207788622U true CN207788622U (en) | 2018-08-31 |
Family
ID=63284186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721748747.0U Active CN207788622U (en) | 2017-12-14 | 2017-12-14 | Polishing pressure buffer pad and burnishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207788622U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108098567A (en) * | 2017-12-14 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing pressure buffer pad, burnishing device and glossing |
-
2017
- 2017-12-14 CN CN201721748747.0U patent/CN207788622U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108098567A (en) * | 2017-12-14 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing pressure buffer pad, burnishing device and glossing |
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Address after: 215000 room 103, building C, North District, Founder science park, No. 188, Suhong East Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: New Meguiar (Suzhou) semiconductor technology Co.,Ltd. Address before: 215000 Suzhou nano city nw-20 107, 108, 109, 110, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Patentee before: SUZHOU SICREAT NANOTECH Co.,Ltd. |