CN207442795U - 适用于低噪声、宽动态范围的高带宽跨阻放大器 - Google Patents
适用于低噪声、宽动态范围的高带宽跨阻放大器 Download PDFInfo
- Publication number
- CN207442795U CN207442795U CN201721171029.1U CN201721171029U CN207442795U CN 207442795 U CN207442795 U CN 207442795U CN 201721171029 U CN201721171029 U CN 201721171029U CN 207442795 U CN207442795 U CN 207442795U
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- CN
- China
- Prior art keywords
- amplifier
- dynamic range
- wide dynamic
- low noise
- high bandwidth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000003321 amplification Effects 0.000 claims abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 206010068052 Mosaicism Diseases 0.000 abstract 1
- 210000003765 sex chromosome Anatomy 0.000 abstract 1
- 230000008859 change Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2017104902893 | 2017-06-25 | ||
CN201710490289 | 2017-06-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207442795U true CN207442795U (zh) | 2018-06-01 |
Family
ID=62301408
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710822717.8A Active CN109120232B (zh) | 2017-06-25 | 2017-09-13 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
CN201721171029.1U Active CN207442795U (zh) | 2017-06-25 | 2017-09-13 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710822717.8A Active CN109120232B (zh) | 2017-06-25 | 2017-09-13 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
Country Status (1)
Country | Link |
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CN (2) | CN109120232B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109120232A (zh) * | 2017-06-25 | 2019-01-01 | 深圳市前海方成微电子有限公司 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109962684B (zh) * | 2019-03-13 | 2020-11-17 | 华中科技大学 | 一种具备三条被控电流支路的高动态范围跨阻放大器 |
CN112671350B (zh) * | 2020-12-28 | 2022-01-04 | 北京力通通信有限公司 | 低噪声大带宽放大器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593810B2 (en) * | 2001-03-16 | 2003-07-15 | Intel Corporation | 2.5 Gigabits-per-second transimpedance amplifier |
US6462327B1 (en) * | 2001-09-27 | 2002-10-08 | Microtune (Texas), L.P. | Analog optical receiver and variable gain transimpedance amplifier useful therewith |
JP5161189B2 (ja) * | 2009-10-23 | 2013-03-13 | 日本電信電話株式会社 | トランスインピーダンスアンプ |
JP5635474B2 (ja) * | 2011-10-18 | 2014-12-03 | 日本電信電話株式会社 | トランスインピーダンスアンプ |
JP2013115562A (ja) * | 2011-11-28 | 2013-06-10 | Sumitomo Electric Ind Ltd | トランスインピーダンスアンプ |
CN103066929A (zh) * | 2012-04-17 | 2013-04-24 | 凯钰科技股份有限公司 | 高速转阻放大器 |
CN103354444B (zh) * | 2013-07-12 | 2017-02-22 | 华侨大学 | 一种低功耗可变增益放大器 |
US10044328B2 (en) * | 2015-07-20 | 2018-08-07 | Macom Technology Solutions Holdings, Inc. | Transimpedance amplifier with bandwidth extender |
CN109347454B (zh) * | 2016-03-28 | 2022-02-15 | 华为技术有限公司 | 一种连续可变增益放大器 |
CN109120232B (zh) * | 2017-06-25 | 2024-07-26 | 集益威半导体(上海)有限公司 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
-
2017
- 2017-09-13 CN CN201710822717.8A patent/CN109120232B/zh active Active
- 2017-09-13 CN CN201721171029.1U patent/CN207442795U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109120232A (zh) * | 2017-06-25 | 2019-01-01 | 深圳市前海方成微电子有限公司 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
CN109120232B (zh) * | 2017-06-25 | 2024-07-26 | 集益威半导体(上海)有限公司 | 适用于低噪声、宽动态范围的高带宽跨阻放大器 |
Also Published As
Publication number | Publication date |
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CN109120232A (zh) | 2019-01-01 |
CN109120232B (zh) | 2024-07-26 |
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200727 Address after: 310012 block H1, 14th floor, building a, Paradise Software Park, No.3 xidoumen Road, Xihu District, Hangzhou City, Zhejiang Province (self declaration) Patentee after: Hangzhou jiyiwei Semiconductor Co.,Ltd. Address before: Room 201, building a, No.1 Qianwan Road, Shenzhen Hong Kong cooperation zone, Qianhai, Shenzhen, Guangdong 518000 Patentee before: SHENZHEN QIANHAI FANGCHENG MICROELECTRONICS CO.,LTD. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 103, No. 6, Lane 60, Naxian Road, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee after: Jiyiwei Semiconductor (Shanghai) Co.,Ltd. Address before: 310012 block H1, 14 / F, building a, Paradise Software Park, No. 3, xidoumen Road, Xihu District, Hangzhou, Zhejiang Province (self declaration) Patentee before: Hangzhou jiyiwei Semiconductor Co.,Ltd. |