CN207425867U - A kind of silicon carbide diode - Google Patents
A kind of silicon carbide diode Download PDFInfo
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- CN207425867U CN207425867U CN201721465292.1U CN201721465292U CN207425867U CN 207425867 U CN207425867 U CN 207425867U CN 201721465292 U CN201721465292 U CN 201721465292U CN 207425867 U CN207425867 U CN 207425867U
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Abstract
The utility model discloses a kind of silicon carbide diodes, including first electrode and second electrode, carborundum base portion is set between the first electrode and second electrode, the carborundum base portion includes substrate layer, the epitaxial layer and polysilicon layer of the first conduction type of the first conduction type sequentially formed, the body area of the second conduction type is formed at the edges at two ends of polysilicon layer in the epitaxial layer, the both ends of the polysilicon layer set doped polysilicon layer, form the Shen Ti areas of the second conduction type at the edges at two ends of doped polysilicon layer in the epitaxial layer.The silicon carbide diode of the utility model is by setting body area and Shen Ti areas to reduce electric field concentration effect, improving the resisting temperature jamming performance of silicon carbide diode and improving the breakdown voltage of silicon carbide diode.
Description
Technical field
The utility model embodiment is related to technical field of semiconductors, more particularly to a kind of silicon carbide diode.
Background technology
Semiconductor power device is the Important Components of field of power electronics, silicon carbide diode because its have it is shorter extensive
The multiple time, influence of the temperature for switching behaviour is smaller, ultrafast switching speed and the characteristics of without reverse recovery current, therefore
Application in the fields such as inverter, switched-mode power supply or illumination is increasingly extensive.
Chinese patent application the 201510064902.6th discloses a kind of diode, which includes carborundum
Substrate (11), stop-layer (12), drift layer (13), protection ring (14), Schottky electrode (15), Ohmic electrode (16) and surface are protected
Cuticula (17).At a temperature of 25 DEG C of measurement, the forward conduction resistance R of diode (1) and the response charge Q of diode (1)
Product RQ meets the relation that RQ≤0.25 × V blocks 2.Conducting resistance R is from forward current-voltage characteristic of diode (1)
To obtain.Reverse BV V blockings are defined as generating to the backward voltage of the breakdown of diode (1).Charge Q is responded by with double
Pulse method implements the result of test to obtain.
But diode of the prior art, focus on the switching characteristic for optimizing diode.With excellent switching characteristic
On the basis of how to optimize field effect, providing the diode component that performance more optimizes becomes industry urgent problem to be solved.
Therefore, existing diode has yet to be improved and developed.
Utility model content
The utility model provides a kind of silicon carbide diode, by being set in epitaxial layer for the technical problem present on
Zhi Ti areas and Shen Ti areas reduce electric field concentration effect, improve the resisting temperature jamming performance of silicon carbide diode and improve
The breakdown voltage of silicon carbide diode.
A kind of technical solution provided by the utility model is：A kind of silicon carbide diode is provided, including first electrode and
Second electrode, sets carborundum base portion between the first electrode and second electrode, which includes sequentially form the
The epitaxial layer and polysilicon layer of the substrate layer of one conduction type, the first conduction type, close to polysilicon layer in the epitaxial layer
Edges at two ends at form the body area of the second conduction type, the both ends of the polysilicon layer set doped polysilicon layer, in the extension
The Shen Ti areas of the second conduction type are formed in floor at the edges at two ends of doped polysilicon layer.
Wherein, which is located at the middle part in the body area, and the center line in Shu Shenti areas is overlapped with the center line in the body area.
In another embodiment of silicon carbide diode, the substrate layer of first conduction type and first conduction type
Second epitaxial layer of the first conduction type is set between epitaxial layer.
Second epitaxial layer is formed with the second body area of the second conduction type in the intersection with the epitaxial layer.
Preferably, the center line in the body area is overlapped with the center line in the second body area.
Epitaxial layer of the doped polysilicon layer not with first conduction type contacts, and the doped polysilicon layer is conductive for second
Type doped polysilicon silicon layer.
In an embodiment of silicon carbide diode, the substrate layer of first conduction type is N-type substrate layer, this first is led
The epitaxial layer of electric type is N-type epitaxy layer, and the body area of second conduction type is PXing Ti areas, the deep body of second conduction type
Area is PXing Shenti areas, and the second body area of second conduction type is PXing Shenti areas and the second conduction type doped polycrystalline
Silicon layer is p-type doped polysilicon layer.
In another embodiment of silicon carbide diode, the substrate layer of first conduction type is P type substrate layer, this first
The epitaxial layer of conduction type is p-type epitaxial layer, and the body area of second conduction type is NXing Ti areas, the depth of second conduction type
Body area is NXing Shenti areas, and the second body area of second conduction type is more for NXing Shenti areas and second conduction type doping
Crystal silicon layer is n-type doping polysilicon layer.
The advantageous effect of the utility model embodiment is：The silicon carbide diode of the present embodiment forms polycrystalline in growth
Ion implanting forms body area during silicon layer, and when etching forms doped polysilicon layer, ion implanting forms Shen Ti areas, Shen Ti areas and mixes
Miscellaneous doping polycrystalline silicon layer technique is completed simultaneously, reduces device making technics, and improving production efficiency while promotes diode component
Overall performance.Also, electric field concentration effect is reduced in the body area that epitaxial layer is set and Shen Ti areas, improves two pole of carborundum
The resisting temperature jamming performance of pipe and improve the breakdown voltage of silicon carbide diode.Meanwhile the polysilicon contacted with the body area
Layer is high-concentration dopant polysilicon layer, and the setting of the doped polysilicon layer optimizes the switching performance of electrode.
Description of the drawings
Fig. 1 is the first conduction type structure diagram of the first embodiment of the utility model silicon carbide diode；
Fig. 2 is the second conduction type structure diagram of the first embodiment of the utility model silicon carbide diode；
Fig. 3 is the first conduction type structure diagram of the second embodiment of the utility model silicon carbide diode；And
Fig. 4 is the second conduction type structure diagram of the second embodiment of the utility model silicon carbide diode.
Specific embodiment
Purpose, technical scheme and advantage to make the utility model embodiment are more clearly understood, right below in conjunction with the accompanying drawings
The utility model embodiment is described in further details.Here, the schematic description and description of the utility model is used to solve
The utility model is released, but is not intended to limit the scope of the present invention.
The invention relates to silicon carbide diodes.
It please refers to Fig.1, the structure between dotted line B and dotted line C is the structure of single silicon carbide diode.
Embodiment 1
The SiClx diode includes being arranged on the first electrode 10 of bottom and second electrode 20, the first electrode 10 and the
Carborundum base portion is set between two electrodes 20.For example, the first electrode 10 can be Schottky electrode, which can be with
For Ohmic electrode.Herein below is Schottky electrode with the first electrode 10, the second electrode 20 be Ohmic electrode exemplified by be subject to
It introduces.
The carborundum base portion includes substrate layer 30, the epitaxial layer 40 and polycrystalline of the first conduction type of the first conduction type
Silicon layer 50.The both ends connection doped polysilicon layer 52 of the polysilicon layer 50.Close to the two of polysilicon layer 50 in the epitaxial layer 40
The body area 60 of the second conduction type is formed at end margin.The both ends of the polysilicon layer 50 set doped polysilicon layer 52 to be connect with body area
It touches, is not contacted with epitaxial layer 40.Meanwhile the is formed at the edges at two ends of doped polysilicon layer 52 in the epitaxial layer 40
The Shen Ti areas 62 of two conduction types.
In manufacture craft, when growth forms polysilicon layer 50, ion implanting forms body area 60, in etching and ion note
Enter ion implanting while doping forms doped polysilicon layer and form Shen Ti areas 62.Relation in the body area 60 and Shen Ti areas 62
In, which is located at the middle part in the body area 60, that is, the center line in Shu Shenti areas 62 is overlapped with the center line in the body area 60,
As shown in Figure 3.
Referring again to Fig. 1, in the embodiment of the silicon carbide diode, the substrate layer 30 of first conduction type is N-type
Substrate layer, the epitaxial layer 40 of first conduction type is N-type epitaxy layer, and the body area 60 of second conduction type is PXing Ti areas, should
The Shen Ti areas 52 of second conduction type are PXing Shenti areas and the second conduction type doped polysilicon layer 52 is that p-type doping is more
Crystal silicon layer.
It please refers to Fig.2, as another embodiment of silicon carbide diode, the substrate layer 35 of first conduction type is p-type
Substrate layer, the epitaxial layer 45 of first conduction type is p-type epitaxial layer, and the body area 65 of second conduction type is NXing Ti areas, should
The Shen Ti areas 66 of second conduction type are NXing Shenti areas and the second conduction type doped polysilicon layer 53 is that n-type doping is more
Crystal silicon layer.
Embodiment 2
It please refers to Fig.3, in the second embodiment of silicon carbide diode, the substrate layer 130 of first conduction type is with being somebody's turn to do
Second epitaxial layer 170 of the first conduction type is set between the epitaxial layer 140 of the first conduction type.Second epitaxial layer 170
The breakdown voltage for improving silicon carbide diode is set.The present embodiment exists, the ion implanting shape when growth forms polysilicon layer 150
Adult area 160, ion implanting forms Shen Ti areas 162 while etching and ion implantation doping formation doped polysilicon layer 152.
Relation in the body area 160 and Shen Ti areas 162 is same as Example 1, and details are not described herein.
Second epitaxial layer 170 is being formed with the of the second conduction type with the etching doping of the intersection of the epitaxial layer 140
Disome area 180.
The center line in the body area 160 is overlapped with the center line in the second body area 180.
The doped polysilicon layer 152 is not contacted with the epitaxial layer of first conduction type 140, the doped polysilicon layer 152
For the second conduction type doped polysilicon layer.
Referring again to Fig. 3, in the embodiment of the silicon carbide diode, the substrate layer 130 of first conduction type is N
Type substrate layer, the epitaxial layer 140 of first conduction type is N-type epitaxy layer, and the body area 160 of second conduction type is p-type body
Area, the Shen Ti areas 162 of second conduction type are PXing Shenti areas, and the second body area 180 of second conduction type is p-type depth body
Area and the second conduction type doped polysilicon layer 152 are p-type doped polysilicon layer.
It please refers to Fig.4, in another embodiment of silicon carbide diode, the substrate layer 135 of first conduction type is p-type
Substrate layer, the epitaxial layer 145 of first conduction type is p-type epitaxial layer, and the body area 165 of second conduction type is NXing Ti areas,
The Shen Ti areas 166 of second conduction type are NXing Shenti areas, and the second body area 180 of second conduction type is NXing Shenti areas,
And the second conduction type doped polysilicon layer 153 is n-type doping polysilicon layer.
The silicon carbide diode of the utility model, when growth forms polysilicon layer, ion implanting forms body area, is etching
Ion implanting forms Shen Ti areas when forming doped polysilicon layer, and Shen Ti areas and doped polysilicon layer doping process are completed, subtracted simultaneously
Few device making technics, improving production efficiency while, promote the overall performance of diode component.Also, it is set in epitaxial layer
Body area and Shen Ti areas reduce electric field concentration effect, improve the resisting temperature jamming performance of silicon carbide diode and improve carbon
The breakdown voltage of SiClx diode.Meanwhile the polysilicon layer contacted with the body area is high-concentration dopant polysilicon layer, the doping is more
The setting of crystal silicon layer optimizes the switching performance of electrode.
The foregoing is merely the embodiments of the utility model, and it does not limit the scope of the patent of the present invention, all
It is equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, directly or indirectly uses
In other related technical areas, it is equally included in the patent within the scope of the utility model.
Claims (8)
1. a kind of silicon carbide diode including first electrode and second electrode, is set between the first electrode and second electrode
Put carborundum base portion, the carborundum base portion includes the substrate layer of the first conduction type sequentially formed, the first conduction type
Epitaxial layer and polysilicon layer form the body of the second conduction type in the epitaxial layer at the edges at two ends of polysilicon layer
Area, which is characterized in that the both ends of the polysilicon layer set doped polysilicon layer, close to DOPOS doped polycrystalline silicon in the epitaxial layer
The Shen Ti areas of the second conduction type are formed at the edges at two ends of floor.
2. silicon carbide diode according to claim 1, which is characterized in that the Shen Ti areas are located in the body area
Portion, the center line in Shu Shenti areas are overlapped with the center line in the body area.
3. silicon carbide diode according to claim 1, which is characterized in that the substrate layer of first conduction type and institute
State the second epitaxial layer that the first conduction type is set between the epitaxial layer of the first conduction type.
4. silicon carbide diode according to claim 3, which is characterized in that second epitaxial layer with the epitaxial layer
Intersection be formed with the second body area of the second conduction type.
5. silicon carbide diode according to claim 4, which is characterized in that the center line in the body area and second body
The center line in area overlaps.
6. silicon carbide diode according to claim 5, which is characterized in that the doped polysilicon layer is not with described first
The epitaxial layer contact of conduction type, the doped polysilicon layer are the second conduction type doped polysilicon layer.
7. according to the silicon carbide diode described in claim 1-6 any one, which is characterized in that first conduction type
Substrate layer is N-type substrate layer, and the epitaxial layer of first conduction type is N-type epitaxy layer, the body area of second conduction type
For PXing Ti areas, the Shen Ti areas of second conduction type are PXing Shenti areas, and the second body area of second conduction type is p-type
Shen Ti areas and the second conduction type doped polysilicon layer are p-type doped polysilicon layer.
8. according to the silicon carbide diode described in claim 1-6 any one, which is characterized in that first conduction type
Substrate layer is P type substrate layer, and the epitaxial layer of first conduction type is p-type epitaxial layer, the body area of second conduction type
For NXing Ti areas, the Shen Ti areas of second conduction type are NXing Shenti areas, and the second body area of second conduction type is N-type
Shen Ti areas and the second conduction type doped polysilicon layer are n-type doping polysilicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721465292.1U CN207425867U (en) | 2017-11-06 | 2017-11-06 | A kind of silicon carbide diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721465292.1U CN207425867U (en) | 2017-11-06 | 2017-11-06 | A kind of silicon carbide diode |
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| Publication Number | Publication Date |
|---|---|
| CN207425867U true CN207425867U (en) | 2018-05-29 |
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| CN201721465292.1U Active CN207425867U (en) | 2017-11-06 | 2017-11-06 | A kind of silicon carbide diode |
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| Country | Link |
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| CN (1) | CN207425867U (en) |
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2017
- 2017-11-06 CN CN201721465292.1U patent/CN207425867U/en active Active
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Effective date of registration: 20210113 Address after: 518000 room 5c1, floor 5, Tianji building, Tian'an Digital City, No.10, Tairan 5th Road, Tian'an community, Shatou street, Futian District, Shenzhen City, Guangdong Province Patentee after: Guangdong keyia Semiconductor Technology Co.,Ltd. Address before: 518000 5c1, block CD, Tianji building, chegongmiao, Futian District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN KIA SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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