CN207294944U - A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod - Google Patents
A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod Download PDFInfo
- Publication number
- CN207294944U CN207294944U CN201721171791.XU CN201721171791U CN207294944U CN 207294944 U CN207294944 U CN 207294944U CN 201721171791 U CN201721171791 U CN 201721171791U CN 207294944 U CN207294944 U CN 207294944U
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- placement section
- clamping device
- heavy hammer
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod disclosed in the utility model, including connected heavy hammer part and seed crystal placement section, the upper end of heavy hammer part is equipped with the pin hole of connection seed crystal rope, there is the cavity for placing graphite transition part inside seed crystal placement section, and graphite transition part passes through end face of the seed crystal placement section away from heavy hammer part, graphite transition part is equipped with vertical through hole and is used to place seed crystal, the lower part of heavy hammer part is at least provided with two blocks prominent laterally, seed crystal placement section offers and block quantity on the end face of heavy hammer part, the corresponding perforate of shape.A kind of each component of seed crystal clamping device of vertical pulling method production silicon single crystal rod of the utility model uses refractory metal material, prevent that its own is broken, connection mode uses rotary buckle mode between each component, prevent from being threadedly coupled between metalwork when using at high temperature and burn situation to death, and in seed crystal clamping device inner mast graphite material transition member, prevent seed crystal heat-shock.
Description
Technical field
The utility model belongs to vertical pulling method production silicon single crystal rod equipment technical field, and in particular to a kind of vertical pulling method production
The seed crystal clamping device of silicon single crystal rod.
Background technology
In vertical pulling method production single crystal silicon square rods technique, simplified process is the silica crucible first loaded raw material in single crystal growing furnace stove
In, by furnace body it is closed after be passed through protection gas, by heater by expect block be heated to 1400 DEG C or so fusing, by seeding, shouldering,
Turn the operation such as shoulder, isometrical, ending, complete crystal pulling process, finally close heater blowing out cooling.
The drawing of silicon single crystal rod, be by single crystal growing furnace at the top of pulling apparatus silicon single crystal rod is lifted, pulling apparatus work
Brief principle is to rotate to drive a shaft to rotate by motor, piece flexible axle seed crystal rope of shaft wound thereon, seed crystal rope lower end
Seed crystal clamping device is connected, seed crystal is positioned in seed crystal clamping device, and motor, which rotates, drives shaft to rotate, and shaft rotation drives seed
The lifting of crystalline substance rope declines, and then drives the lifting or decline of seed crystal clamping device and seed crystal.Existing seed crystal clamping device is briefly tied
Structure is that top is divided into weight part, is made using refractory metal material, such as molybdenum materials matter；Lower part is divided into seed crystal placement part, makes
With graphite material, two parts are connected through a screw thread, and vertical pulling method produces silicon single crystal rod as technique constantly changes, first charged material weight
It is continuously increased, seed crystal clamping device, which bears a heavy burden, to be increased, and the screw thread that weight part is connected with seed crystal placement part screw thread easily occurs and falls
Tooth situation, causes crystal bar to drop the appearance of accident；Easily there is breakage in the seed crystal placement part of graphite material, causes seed crystal
Drop and cause crystal bar to drop accident, but if seed crystal placement part material is changed to refractory metal material, then occur
Seed crystal placement part burns situation to death with weight part threaded connection place, can not depart from two parts, thus can not replace seed crystal.
Utility model content
The purpose of this utility model is to provide a kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod, list is prevented
Seed crystal clamping device itself comes off in crystalline silicon rod pulling process or seed crystal comes off with clamping device, and prevention crystal bar drops the hair of accident
It is raw.
Technical solution is used by the utility model：A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod,
Including connected heavy hammer part and seed crystal placement section, the upper end of heavy hammer part is equipped with the pin hole of connection seed crystal rope, in seed crystal placement section
Portion has the cavity for placing graphite transition part, and graphite transition part passes through end face of the seed crystal placement section away from heavy hammer part, graphite mistake
Cross portion to be used to place seed crystal equipped with vertical through hole, the lower part of heavy hammer part is at least provided with two blocks prominent laterally, seed
Brilliant placement section offers perforate corresponding with block quantity, shape on the end face of heavy hammer part.
The utility model is also characterized by
Open up fluted on the upper surface of block, the top inner surface of the seed crystal placement section equipped with perforate is provided with and groove
The convex block that shape is adapted.
The internal cavities of seed crystal placement section and the taper that the part being in contact of graphite transition part is that shape is adapted.
The internal cavities of seed crystal placement section are taper, and it is prominent laterally that the top of graphite transition part is provided with least three
Contact block, the external surface shape of contact block and the taper of seed crystal placement section internal cavities are adapted.
The through hole of graphite transition part is cone, and the shape of seed crystal and the shape of through hole are adapted.
The beneficial effects of the utility model are：A kind of seed crystal clamping of the vertical pulling method production silicon single crystal rod of the utility model
Device can prevent that seed crystal clamping device itself comes off in silicon single crystal rod pulling process or seed crystal comes off with clamping device, and prevention is brilliant
Rod drops the generation of accident.A kind of each component of seed crystal clamping device of vertical pulling method production silicon single crystal rod of the utility model makes
With refractory metal material, prevent that its own is broken, connection mode uses rotary buckle mode between each component, prevents metalwork
Between be threadedly coupled when using at high temperature and burn situation to death, and in seed crystal clamping device inner mast graphite material transition member,
Prevent seed crystal heat-shock.
Brief description of the drawings
Fig. 1 is a kind of structure diagram of the seed crystal clamping device of vertical pulling method production silicon single crystal rod of the utility model；
Fig. 2 is the three-dimensional structure diagram of heavy hammer part in Fig. 1；
Fig. 3 is the structure sectional view of Fig. 2；
Fig. 4 is the three-dimensional structure diagram of seed crystal placement section in Fig. 1；
Fig. 5 is the structure sectional view of Fig. 4；
Fig. 6 is the three-dimensional structure diagram of graphite transition part in Fig. 1；
Fig. 7 is the structure sectional view of Fig. 6.
In figure, 1. heavy hammer parts, 2. seed crystal placement sections, 3. graphite transition parts, 4. seed crystals, 5. pin holes, 6. grooves, 7. is convex
Block, 8. contact blocks.
Embodiment
The utility model is described in detail with reference to the accompanying drawings and detailed description.
A kind of structure such as Fig. 1 institutes of the seed crystal clamping device of vertical pulling method production silicon single crystal rod provided by the utility model
Show, including connected heavy hammer part 1 and seed crystal placement section 2, the upper end of heavy hammer part 1 are equipped with the pin hole 5 of connection seed crystal rope, seed crystal is put
Putting the inside of portion 2 has the cavity for placing graphite transition part 3, and graphite transition part 3 passes through seed crystal placement section 2 away from heavy hammer part 1
End face, graphite transition part 3 are equipped with vertical through hole and are used to place seed crystal 4, the lower part of heavy hammer part 1 at least provided with two laterally
Prominent block, seed crystal placement section 2 offer perforate corresponding with block quantity, shape on the end face of heavy hammer part 1, weight
The block of hammer portion 1 enters the inner cavity of seed crystal placement section 2 by the perforate of 2 end face of seed crystal placement section, and then rotation passes through both
The mode of rotary buckle mounts.
Preferably, referring to Fig. 2-Fig. 5, fluted 6 are opened up on the upper surface of block, the seed crystal placement section 2 equipped with perforate
Top inner surface is provided with the convex block 7 being adapted with 6 shape of groove, and convex block 7 falls into groove 6 and is mutually clamped when rotated so that
Heavy hammer part 1 and 2 link position of seed crystal placement section are relatively fixed.
Further, the internal cavities of seed crystal placement section 2 are shape phase with the part being in contact of 3 outer wall of graphite transition part
The taper of adaptation, makes both form taper-face contact, after contact area is increased, connects both more firm.
Preferably, referring to Fig. 6 and Fig. 7, the internal cavities of seed crystal placement section 2 are taper, and the top of graphite transition part 3 is set
There are at least three contact blocks 8 protruded laterally, the external surface shape of contact block 8 and the taper of 2 internal cavities of seed crystal placement section
It is adapted, both form local taper-face contact, both connections can be made more firm, while are also prevented from temperature excessive rear two
Person occurs thermal expansion and is difficult to remove.
Preferably, the through hole of graphite transition part 3 is cone, and the shape of seed crystal 4 and the shape of through hole are adapted, are mounted on
In the cone-shaped hole of graphite transition part 3.
In use, first the pin hole 5 of seed crystal rope through heavy hammer part 1 is fixed, while seed crystal 4 is positioned over graphite mistake
Cross in the through hole in portion 3, then graphite transition part is positioned over to the internal cavity of seed crystal placement section 2, finally fall the block of heavy hammer part 1
Mutually rotated after entering 2 internal cavity of seed crystal placement section so that the convex block 7 of seed crystal placement section 2 is fallen into the groove 6 on block, is led to
The mutual cooperation of convex block 7 and groove 6 is crossed so that the position of heavy hammer part 1 and seed crystal placement section 2 is relatively fixed.
Claims (5)
- A kind of 1. seed crystal clamping device of vertical pulling method production silicon single crystal rod, it is characterised in that including connected heavy hammer part (1) and Seed crystal placement section (2), the upper end of the heavy hammer part (1) are equipped with the pin hole (5) of connection seed crystal rope, the seed crystal placement section (2) Inside has the cavity for placing graphite transition part (3), and the graphite transition part (3) is remote through the seed crystal placement section (2) The end face of heavy hammer part (1), the graphite transition part (3) are equipped with vertical through hole and are used to place seed crystal (4), the heavy hammer part (1) Lower part opened at least provided with two blocks prominent laterally, the seed crystal placement section (2) on the end face of heavy hammer part (1) Equipped with the block quantity, the corresponding perforate of shape.
- 2. the seed crystal clamping device of a kind of vertical pulling method production silicon single crystal rod as claimed in claim 1, it is characterised in that described Fluted (6) are opened up on the upper surface of block, the top inner surface of the seed crystal placement section (2) equipped with perforate be provided with it is described recessed The convex block (7) that groove (6) shape is adapted.
- 3. the seed crystal clamping device of a kind of vertical pulling method production silicon single crystal rod as claimed in claim 1, it is characterised in that described The internal cavities of seed crystal placement section (2) and the taper that the part being in contact of graphite transition part (3) outer wall is that shape is adapted.
- 4. the seed crystal clamping device of a kind of vertical pulling method production silicon single crystal rod as claimed in claim 1, it is characterised in that described The internal cavities of seed crystal placement section (2) are taper, and the top of the graphite transition part (3) is provided with least three and protrudes laterally Contact block (8), the external surface shape of the contact block (8) and the taper of seed crystal placement section (2) internal cavities are adapted.
- 5. the seed crystal clamping device of a kind of vertical pulling method production silicon single crystal rod as claimed in claim 1, it is characterised in that described The through hole of graphite transition part (3) is cone, and the shape and the shape of the through hole of the seed crystal (4) are adapted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721171791.XU CN207294944U (en) | 2017-09-13 | 2017-09-13 | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721171791.XU CN207294944U (en) | 2017-09-13 | 2017-09-13 | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207294944U true CN207294944U (en) | 2018-05-01 |
Family
ID=62446981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721171791.XU Active CN207294944U (en) | 2017-09-13 | 2017-09-13 | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207294944U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554754A (en) * | 2018-12-20 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of preparation method of single crystal growing furnace and monocrystalline silicon |
| CN110230093A (en) * | 2019-07-10 | 2019-09-13 | 深圳市全普科技有限公司 | A kind of seed crystal clamping pulling apparatus for monocrystalline silicon growing furnace |
-
2017
- 2017-09-13 CN CN201721171791.XU patent/CN207294944U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554754A (en) * | 2018-12-20 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of preparation method of single crystal growing furnace and monocrystalline silicon |
| CN110230093A (en) * | 2019-07-10 | 2019-09-13 | 深圳市全普科技有限公司 | A kind of seed crystal clamping pulling apparatus for monocrystalline silicon growing furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207294944U (en) | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod | |
| CN104043792B (en) | The preparation facilities of light-alloy or light metal semi solid slurry and preparation method | |
| CN207347692U (en) | The lifting gear of single crystal growing furnace silica crucible | |
| CN106637402A (en) | Flat ending method of monocrystal silicon and preparation method of monocrystal silicon | |
| CN104099660B (en) | The big kilogram of rotation of number sapphire crystal is expanded shoulder stabilization and draws high method | |
| CN201463538U (en) | combined crucible | |
| CN110528065A (en) | A kind of monocrystalline silicon growing furnace that security performance is high | |
| TW201129730A (en) | Single crystal pulling apparatus and single crystal pulling method | |
| CN102296358A (en) | Combination method for carbon material combined crucible, and combined crucible thereof | |
| CN104532342B (en) | A kind of EFG technique grows the growing method of micropore sapphire crystal | |
| CN206033931U (en) | Crystal growing device | |
| CN204251771U (en) | A kind of sapphire crystal growth device | |
| CN202090097U (en) | Carbon/carbon composite combined crucible | |
| CN102127804B (en) | Bridgman-Stockbarge method single crystal growth furnace and application thereof | |
| CN203602749U (en) | Heating coil for drawing six-inch zone-molten silicon single crystal | |
| CN202090096U (en) | Combined carbon crucible | |
| CN103160934A (en) | Device and method of temperature gradient control in growth process of crystal material | |
| CN103233266A (en) | Portable silicon rod withdrawing device for increasing feeding amount of single crystal furnace | |
| CN207498509U (en) | For the quick material mechanism of single crystal growing furnace | |
| CN204690161U (en) | A kind ofly get brilliant device for opening door czochralski crystal growing furnace | |
| CN201942780U (en) | Straight-pull single-crystal furnace crystal bar bracket | |
| CN207418910U (en) | A kind of slow radiator of single crystal growing furnace blowing out | |
| CN202187084U (en) | Carbon-carbon composite material crucible capable of conveniently cleaning quartz residual body in crucible | |
| CN205839188U (en) | A kind of new electronic control integration single crystal growing furnace | |
| CN205874579U (en) | Crystal growth draws iridium pole with carrying |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |