CN109554754A - A kind of preparation method of single crystal growing furnace and monocrystalline silicon - Google Patents
A kind of preparation method of single crystal growing furnace and monocrystalline silicon Download PDFInfo
- Publication number
- CN109554754A CN109554754A CN201811562822.3A CN201811562822A CN109554754A CN 109554754 A CN109554754 A CN 109554754A CN 201811562822 A CN201811562822 A CN 201811562822A CN 109554754 A CN109554754 A CN 109554754A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal growing
- growing furnace
- seedholder
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the present invention provides the preparation method of a kind of single crystal growing furnace and monocrystalline silicon; the single crystal growing furnace includes: weight and the seedholder that connect with weight; weight includes: the first upper-part for connecting with tungsten wire line and the first lower component for connecting with seedholder; flow dividing structure is set on weight or seedholder; flow dividing structure is used to adjust the type of flow of protective gas in single crystal growing furnace; flow at least partly protective gas with first direction, wherein first direction is not the direction along weight or seedholder axially downwardly.The embodiment of the present invention passes through the type of flow of the adjustable protective gas of flow dividing structure, can disperse the vertical component of protective gas, to inhibit influence of the air-flow of protective gas to meniscus and melt liquid level, guarantees monocrystalline silicon growing quality.
Description
Technical field
The present embodiments relate to monocrystalline silicon production manufacturing fields, and in particular to the preparation side of a kind of single crystal growing furnace and monocrystalline silicon
Method.
Background technique
As the monocrystalline silicon piece of integrated circuit substrate material, manufacturing process be by vertical pulling method pulling monocrystal silicon rod, then
By processes such as multi-wire saw, etching, grinding, chamfering, polishing and cleanings, monocrystalline silicon piece is manufactured.Silicon single crystal rod is by having
The single crystal seed of identical crystal orientation carries out seeding, grows silicon single crystal rod from the silicon melt of melting.
Influence of the environment to crystal bar in silicon single crystal rod growth course in order to prevent, using argon gas as protective gas, and
The suitable argon gas type of flow is formed inside crystal pulling furnace, is taken away the impurity discharged during crystal pulling in time, is further decreased environment
Influence to crystal growth.But in monocrystalline silicon production manufacturing process, it is raw that the type of flow of existing argon gas will affect monocrystalline silicon
Therefore long quality needs to be adjusted the type of flow of argon gas in monocrystalline silicon production manufacturing process, avoids the stream due to argon gas
Flowing mode influences monocrystalline silicon growing quality.
Summary of the invention
One of the embodiment of the present invention is designed to provide the preparation method of a kind of single crystal growing furnace and monocrystalline silicon, solves existing
The type of flow of argon gas influences the problem of monocrystalline silicon growing quality.
In a first aspect, the embodiment of the invention provides a kind of single crystal growing furnaces, comprising: weight and the seed crystal being connect with the weight
Collet, wherein the weight includes: the first upper-part for connecting with tungsten wire line and for connecting with the seedholder
Flow dividing structure is set on the first lower component, the weight or the seedholder, and the flow dividing structure is for adjusting the monocrystalline
The type of flow of protective gas in furnace flows at least partly described protective gas with first direction,
Described in first direction be not direction along the weight or the seedholder axially downwardly.
Optionally, the junction of first upper-part and first lower component is arranged in the flow dividing structure, described
The diameter of first lower component is greater than the diameter of first upper-part, and the diameter of first lower component is greater than the seed chuck
The diameter of head.
Optionally, the flow dividing structure that the junction of first upper-part and first lower component is arranged in is presented
Horizontal shape or the shape tilted down.
Optionally, the seedholder include: the second upper-part for being connect with first lower component and with it is described
Second lower component of the second upper-part connection, wherein the diameter of the junction of second upper-part and second lower component is big
In the diameter of first lower component and the junction of second upper-part, the flow dividing structure is arranged on second top
The junction of part and second lower component.
Optionally, the cross sectional shape of the seedholder is pentagon.
Optionally, the flow dividing structure is at least two-stage step structure.
Optionally, the weight and the seedholder are threadedly coupled.
Second aspect, the embodiment of the invention also provides a kind of preparation methods of monocrystalline silicon, utilize monocrystalline as described above
Furnace prepares monocrystalline silicon.
Optionally, the preparation method further include:
In seeding stage and/or necking down stage, the protective gas flow velocity in the single crystal growing furnace is reduced；
Alternatively,
Turn shoulder stage and/or isodiametric growth stage, reduces the protective gas flow velocity in the single crystal growing furnace.
Optionally, described in the seeding stage and/or the necking down stage, the protective gas flow velocity in the single crystal growing furnace is reduced, is wrapped
It includes:
In seeding stage and/or necking down stage, the argon gas flow velocity in the single crystal growing furnace is reduced to fusing ending phase
The 96%~97% of argon gas flow velocity；
Alternatively,
It is described to turn shoulder stage and/or isodiametric growth stage, reduce the protective gas flow velocity in the single crystal growing furnace, comprising:
Turning shoulder stage and/or isodiametric growth stage, the argon gas flow velocity in the single crystal growing furnace is reduced to the argon gas of fusing ending phase
The 92%~94% of flow velocity.
In embodiments of the present invention, by the type of flow of protective gas in the adjustable single crystal growing furnace of flow dividing structure, so that
At least partly protective gas is flowed with first direction in the single crystal growing furnace, and wherein first direction is not along weight or seed chuck
The direction of head axially downwardly, can disperse the vertical component of protective gas, it is possible to reduce the air-flow of protective gas is to bent moon in this way
The influence in face and melt liquid level thereby may be ensured that the quality of monocrystalline silicon growing.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
The type of flow schematic diagram of the existing seeding stage argon gas of Fig. 1 a；
The type of flow schematic diagram of the existing isodiametric growth stage argon gas of Fig. 1 b；
Fig. 2 a is one of weight and structural schematic diagram of seedholder of the embodiment of the present invention；
Fig. 2 b is the weight of the embodiment of the present invention and the second structural representation of seedholder；
Fig. 2 c is the weight of the embodiment of the present invention and the third structural representation of seedholder；
Fig. 3 a is one of the type of flow schematic diagram of argon gas of the embodiment of the present invention；
Fig. 3 b is the two of the type of flow schematic diagram of the argon gas of the embodiment of the present invention；
Fig. 3 c is the three of the type of flow schematic diagram of the argon gas of the embodiment of the present invention；
Fig. 4 a is the schematic diagram of the argon flow of prior art；
Fig. 4 b is the schematic diagram using the argon flow of the embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Term " includes " and its any deformation in the description and claims of this application, it is intended that covering
Non-exclusive includes, for example, the process, method, system, product or equipment for containing a series of steps or units are not necessarily limited to clearly
Those of list to Chu step or unit, but may include be not clearly listed or for these process, methods, product or
The intrinsic other step or units of equipment.In addition, indicating institute's connecting object using "and/or" in specification and claim
At least one, such as A and/or B, indicate to include independent A, independent B and A and B have three kinds of situations.
In embodiments of the present invention, " illustrative " or " such as " etc. words for indicate make example, illustration or explanation.This
Be described as in inventive embodiments " illustrative " or " such as " any embodiment or design scheme be not necessarily to be construed as comparing
Other embodiments or design scheme more preferably or more advantage.Specifically, use " illustrative " or " such as " etc. words purport
Related notion is being presented in specific ways.
As shown in Figure 1a, single crystal growing furnace includes: weight (or referred to as seed crystal weight) 1, seedholder 2, heat shielding 3 etc., existing
The argon gas type of flow be to be passed through argon gas at the top of the single crystal growing furnace, argon gas is discharged from bottom, causes argon gas flowing side from top to bottom
Formula, wherein arrow 4 shown in Fig. 1 a is used to indicate the flow direction of argon gas stream.(crystal melts meniscus 5 in monocrystalline silicon growing
The intersection of body and argon gas) and the stabilization of melt liquid level 6 it is most important to the growth quality of silicon single crystal rod, due to from top to bottom
Gas flow pattern, so that argon gas blows to meniscus 5 and melt liquid level 6 with certain speed, it can be to meniscus 5 and melt liquid level 6
The stabilization of shape causes to fluctuate, and influences the quality of crystal growth.
Also, the growth of monocrystalline silicon is divided into seeding, necking down, turns shoulder, isodiametric growth and five stages of ending, and argon gas is in melt
Flow velocity at liquid level 6 and meniscus 5 will be different in the different phase of crystal growth.In seeding, necking down and turn shoulder stage, argon
Gas flows vertically to meniscus 5 and melt liquid level 6 by heat shielding 3, and the velocity flow profile of argon gas is more uniform；In the isodiametric growth stage, argon
Gas flows to meniscus 5 and melt liquid level 6 by the gap of crystal bar 7 and heat shielding 3, and argon gas is blowed to first at meniscus 5, water after shunting
Advection is to melt liquid level 6.Since gap is smaller, certain stream pressure can accelerate the flow velocity of argon gas, so that flowing at meniscus 5
Argon gas flow velocity increase, perturbation is caused to meniscus 5, influences the quality of crystal growth, as shown in Figure 1 b.
A to Fig. 2 c and Fig. 3 a to Fig. 3 c referring to fig. 2, the embodiment of the invention provides a kind of single crystal growing furnaces, comprising: weight 1
With the seedholder 2 being connect with the weight 1, wherein the weight 1 includes: for connecting with tungsten wire line (not shown)
First upper-part 11 and the first lower component 12 for being connect with the seedholder 2, the weight 1 or the seedholder 2
Upper setting flow dividing structure 8, the flow dividing structure 8 is used to adjust the type of flow of protective gas in the single crystal growing furnace, in the list
Flow at least partly described protective gas with first direction, wherein the first direction is not along the weight 1
Or the direction of the seedholder 2 axially downwardly, i.e. first direction are and 2 axial direction of the weight 1 or the seedholder
The direction of intersection.
Wherein, the protective gas can be argon gas, be certainly not limited to this.
In embodiments of the present invention, by the type of flow of the adjustable protective gas of flow dividing structure 8, so that in the list
At least partly described protective gas is flowed in brilliant furnace with first direction, wherein the first direction be not along the weight 1 or
The direction of the seedholder 2 axially downwardly, can disperse the vertical component of protective gas in this way, can inhibit protective gas
Influence of the air-flow to meniscus and melt liquid level, thereby may be ensured that the quality of crystal growth.
With continued reference to Fig. 2 a and 3a, the flow dividing structure 8 is arranged in first upper-part 11 and first lower component
12 junction, the diameter of first lower component 12 are greater than the diameter of first upper-part 11, and first lower component
12 diameter is greater than the diameter of the seedholder 2.
In embodiments of the present invention, structure, the shape of the weight 1 and tungsten wire line coupling part and seedholder 2
Shape and size can refer to existing structure, and the diameter of the first upper-part 11 can be the 1.5 of the diameter of the first lower component 12
~2 times, it is of course not solely limited to this.
With continued reference to Fig. 2 a and 3a, the institute of the junction of first upper-part 11 and first lower component 12 is set
The shape stating the shape of flow dividing structure 8 presentation level or tilting down.In this way, by setting horizontal for the flow dividing structure 8
Shape or the shape that tilts down, thus it is possible to vary the direction of part protective gas vertically downward disperses the flow of protective gas,
And the protective gas of horizontal direction can the certain airflow barrier of formation to protective gas vertically downward, can slow down vertically to
The flow velocity of lower protective gas.
Wherein, the direction for referring to that the angle between 2 axial direction of weight 1 or the seedholder is obtuse angle is tilted down, when
So it is not limited to that.
It should be noted that the embodiment of the present invention is not limited in structure shown in Fig. 2 a and Fig. 3 a, it is above related described
The description of flow dividing structure 8 is example and non-limiting, it is to be understood that the embodiment of the present invention does not limit the shunting specifically
The structure type of structure 8.
B and Fig. 3 b referring to fig. 2, the seedholder 2 include: the second top for connecting with first lower component 12
Part 21 and the second lower component 22 being connect with second upper-part 21, wherein second upper-part 21 and second lower part
The diameter of the junction of part 22 is greater than the diameter of the junction of first lower component 12 and second upper-part 21, and described point
The junction of second upper-part 21 and second lower component 22 is arranged in flow structure 8.
With continued reference to Fig. 2 b and Fig. 3 b, on the basis of Fig. 2 a structure, the size of adjustment seedholder 2 can according to need
And shape, such as: it can set identical for the diameter of the diameter at 2 top of seedholder and weight 1.Illustratively, the seed
The cross sectional shape of brilliant collet 2 can be pentagon, be of course not solely limited to this.
It should be noted that the description of above structure and size in relation to the seedholder 2 and the weight 1 is
Example is simultaneously non-limiting, it is to be understood that does not limit the knot of the seedholder 2 and weight 1 in the embodiment of the present invention specifically
Structure and size.
During preparing monocrystalline silicon using the single crystal growing furnace of Fig. 2 b and Fig. 3 b, the gas of protective gas first straight down
Stream encounters weight 1, and the air-flow of protective gas is located at the dispersion of flow dividing structure 8 one of part and the first lower portion connection on first
Part.The air-flow of protective gas encounters seedholder again, by the flow dividing structure 8 on setting seedholder 2 further to protection
Gas is shunted, and the airflow direction of the protective gas of some becomes horizontal direction or downwardly-inclined direction, horizontal
The protective gas of direction or downwardly-inclined direction can cause to shield to protective gas straight down, further decrease protection gas
Influence of the body to meniscus 5 and melt liquid level 6 is wherein the flow direction of protective gas shown in the arrow in Fig. 3 b.
With continued reference to Fig. 2 c and Fig. 3 c, the flow dividing structure 8 is at least two-stage step structure.Illustratively, the shunting
Structure 8 includes at least: upper section step structure 81 and lower section step structure 82, the gradient of lower section step structure 82 is than upper section step
The gradient of structure 81 can be higher by 5 °~10 °, increase the speed shunt of protective gas horizontal direction in this way, will further subtract
The protective gas of weak vertical direction, as shown in Figure 3c.
It should be noted that the above description in relation to the flow dividing structure 8 is example and non-limiting, it is possible to understand that
It is not limit the specific structure of the flow dividing structure 8 in the embodiment of the present invention specifically.
In embodiments of the present invention, the connection type of weight 1 and seedholder 2 can be threaded connection.Seedholder 2
After size increase, which increases, and in order to guarantee bonding strength, the length and diameter of connection screw thread can also phase
It should increase.Illustratively, the depth of connection screw thread is promoted to 1.5~1.6 times of original length, and the diameter of connection screw thread is promoted to
1.2~1.5 times of original diameter.
It should be noted that the description of above connection type and size for connection in relation to weight 1 and seedholder 2 is only
It is example and non-limiting, it is to be understood that do not limit the company of weight 1 and seedholder 2 specifically in embodiments of the present invention
Connect mode and size for connection.
In addition to this, the embodiment of the invention also provides a kind of preparation methods of monocrystalline silicon, utilize monocrystalline as described above
Furnace prepares monocrystalline silicon.
The flow velocity of (such as: argon gas) can take away the oxidation volatilized from melt it should be noted that the protective gas
Carbon, silica and silicon carbide gas reduce pollution of the foreign gas to thermal field, therefore the flow velocity of protective gas preferably must be held in
, can neither be too high in a certain range, it can not be too low.
In embodiments of the present invention, by the type of flow of the adjustable argon gas of flow dividing structure 8, so that in the single crystal growing furnace
Inside at least partly described protective gas is flowed with first direction, wherein the first direction is not along the weight 1 or described
The direction of seedholder 2 axially downwardly, can disperse the vertical component of argon gas in this way, and the air-flow of protective gas can be inhibited to curved
The influence of lunar surface and melt liquid level thereby may be ensured that the quality of crystal growth.
A referring to fig. 4, by taking protective gas is argon gas as an example, in the preparation process of existing monocrystalline silicon, the flow velocity of argon gas exists
Melting stage is larger, reduces in fusing ending phase, in the seeding of crystal growth, necking down, turns shoulder and the holding of isodiametric growth stage
Identical flow velocity is until the isodiametric growth stage, it is to be understood that fusing terminates, seeding, necking down, turns shoulder and isodiametric growth stage
Argon gas flow velocity is equal, and the argon gas flow velocity of finishing phase further decreases.
In order to match the design of seed crystal weight 1 and collet of the invention, air-flow pair in crystal growing process is further decreased
The influence of 5 shape of melt liquid level 6 and meniscus, on the basis of the above embodiments, the preparation method further include: in seeding rank
Section and/or necking down stage, reduce the protective gas flow velocity in the single crystal growing furnace；Alternatively, turning shoulder stage and/or isodiametric growth rank
Section, reduces the protective gas flow velocity in the single crystal growing furnace.
Compared with the prior art, by flow dividing structure 8, at least part of protective gas will form horizontal direction or incline
The air flow component of protective gas obliquely can disperse the component that protective gas vertically blows to meniscus and melt liquid level, from
And it reduces the seeding stage and turns perturbation of the protective gas to melt liquid level under the shoulder stage；Simultaneously in isodiametric growth stage, level
Direction or protective gas diagonally downward form airflow barrier, form certain blocking to the protective gas in vertical direction, together
When reduce protective gas flow through the air pressure at 7 gap of heat shielding 3 and crystal bar, so that reducing protective gas flows to meniscus and melt liquid
The air velocity in face reduces influence of the protective gas to crystal growth quality.
It in embodiments of the present invention, can be by the argon gas flow velocity in the single crystal growing furnace in seeding stage and/or necking down stage
It is reduced to the 96%~97% of the argon gas flow velocity of fusing ending phase；Alternatively, turning shoulder stage and/or isodiametric growth stage, it can
The argon gas flow velocity in the single crystal growing furnace to be reduced to the 92%~94% of the argon gas flow velocity of fusing ending phase.
Such as: the process of b referring to fig. 4, the preparation method of the monocrystalline silicon of the embodiment of the present invention are as follows: fusing and fusing terminate
The argon gas flow velocity in stage keeps identical with prior art；In seeding stage and/or necking down stage, by original argon gas shown in Fig. 4 a
Flow velocity reduces by 3%~4%；Turning shoulder stage and/or isodiametric growth stage, original argon gas flow velocity shown in Fig. 4 a is reduced by 6%
~8%；The argon gas flow velocity of finishing phase remains unchanged.
In the embodiment of the present invention, the flow velocity straight down of protective gas is dispersed by flow dividing structure 8, and is correspondingly adjusted
Argon gas flow velocity reduces influence of the argon gas flow velocity to melt liquid level 6 and meniscus 5.And in the seeding stage and turns the shoulder stage, reduce
Argon gas flow velocity straight down, and then reduce influence of the argon gas to melt liquid level 6, stablize melt liquid level 6, to reduce melt
Fluctuate the influence to crystal growth initial stage；In the isodiametric growth stage, further reduce the air velocity of argon gas, and then reduce and pass through
Air pressure between 7 gap of heat shielding 3 and crystal bar, to reduce the air velocity that argon gas flows to meniscus 5, it is suppressed that by argon gas flow velocity
Influence of the fluctuation of bring meniscus 5 to crystal growth.
The above is the preferred embodiment of invention, it is noted that those skilled in the art are come
It says, without departing from the principles of the present invention, can also make several improvements and retouch, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of single crystal growing furnace, comprising: weight and the seedholder being connect with the weight, wherein the weight include: for
The first upper-part that tungsten wire line connects and the first lower component for being connect with the seedholder, which is characterized in that described heavy
Flow dividing structure is set on hammer or the seedholder, and the flow dividing structure is used to adjust the flowing of protective gas in the single crystal growing furnace
Mode flows at least partly described protective gas with first direction, wherein the first direction is not
Along the direction of the weight or the seedholder axially downwardly.
2. single crystal growing furnace according to claim 1, which is characterized in that flow dividing structure setting in first upper-part and
The junction of first lower component, the diameter of first lower component are greater than the diameter of first upper-part, and described the
The diameter of one lower component is greater than the diameter of the seedholder.
3. single crystal growing furnace according to claim 2, which is characterized in that be arranged in first upper-part and first lower part
The shape of the flow dividing structure presentation level of the junction of part or the shape tilted down.
4. single crystal growing furnace according to claim 1, which is characterized in that the seedholder includes: under with described first
Second upper-part of component connection and the second lower component being connect with second upper-part, wherein second upper-part and institute
State diameter of the diameter greater than first lower component and the junction of second upper-part of the junction of the second lower component, institute
State the junction that second upper-part and second lower component is arranged in flow dividing structure.
5. single crystal growing furnace according to claim 4, which is characterized in that the cross sectional shape of the seedholder is pentagon.
6. single crystal growing furnace according to claim 1 or 4, which is characterized in that the flow dividing structure is at least two-stage step structure.
7. single crystal growing furnace according to any one of claims 1 to 6, which is characterized in that the weight and the seedholder spiral shell
Line connection.
8. a kind of preparation method of monocrystalline silicon, which is characterized in that utilize single crystal growing furnace system as described in any one of claim 1 to 7
Standby monocrystalline silicon.
9. preparation method according to claim 8, which is characterized in that the preparation method further include:
In seeding stage and/or necking down stage, the protective gas flow velocity in the single crystal growing furnace is reduced；
Alternatively,
Turn shoulder stage and/or isodiametric growth stage, reduces the protective gas flow velocity in the single crystal growing furnace.
10. preparation method according to claim 9, which is characterized in that described in the seeding stage and/or the necking down stage, drop
Protective gas flow velocity in the low single crystal growing furnace, comprising:
In seeding stage and/or necking down stage, the argon gas flow velocity in the single crystal growing furnace is reduced to the argon gas of fusing ending phase
The 96%~97% of flow velocity；
Alternatively,
It is described to turn shoulder stage and/or isodiametric growth stage, reduce the protective gas flow velocity in the single crystal growing furnace, comprising: turning
Argon gas flow velocity in the single crystal growing furnace is reduced to the argon gas flow velocity of fusing ending phase by shoulder stage and/or isodiametric growth stage
92%~94%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562822.3A CN109554754A (en) | 2018-12-20 | 2018-12-20 | A kind of preparation method of single crystal growing furnace and monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562822.3A CN109554754A (en) | 2018-12-20 | 2018-12-20 | A kind of preparation method of single crystal growing furnace and monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109554754A true CN109554754A (en) | 2019-04-02 |
Family
ID=65870389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811562822.3A Pending CN109554754A (en) | 2018-12-20 | 2018-12-20 | A kind of preparation method of single crystal growing furnace and monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109554754A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074682A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Melting process for producing monocrystalline silicon |
| CN103590098A (en) * | 2013-11-15 | 2014-02-19 | 英利集团有限公司 | Single crystal furnace counter weight, single crystal furnace, silicon single crystal and pulling method of silicon single crystal |
| CN105019017A (en) * | 2015-06-30 | 2015-11-04 | 内蒙古中环光伏材料有限公司 | Method used for reducing oxygen content of czochralski silicon |
| CN106661757A (en) * | 2014-08-04 | 2017-05-10 | Lg矽得荣株式会社 | Seed chuck and ingot growing apparatus including same |
| CN107805840A (en) * | 2016-09-09 | 2018-03-16 | 上海新昇半导体科技有限公司 | A kind of crystal pulling mechanism of crystal pulling furnace |
| CN207294944U (en) * | 2017-09-13 | 2018-05-01 | 银川隆基硅材料有限公司 | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod |
| CN108342770A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Seedholder and single crystal pulling stove |
-
2018
- 2018-12-20 CN CN201811562822.3A patent/CN109554754A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074682A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Melting process for producing monocrystalline silicon |
| CN103590098A (en) * | 2013-11-15 | 2014-02-19 | 英利集团有限公司 | Single crystal furnace counter weight, single crystal furnace, silicon single crystal and pulling method of silicon single crystal |
| CN106661757A (en) * | 2014-08-04 | 2017-05-10 | Lg矽得荣株式会社 | Seed chuck and ingot growing apparatus including same |
| CN105019017A (en) * | 2015-06-30 | 2015-11-04 | 内蒙古中环光伏材料有限公司 | Method used for reducing oxygen content of czochralski silicon |
| CN107805840A (en) * | 2016-09-09 | 2018-03-16 | 上海新昇半导体科技有限公司 | A kind of crystal pulling mechanism of crystal pulling furnace |
| CN108342770A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Seedholder and single crystal pulling stove |
| CN207294944U (en) * | 2017-09-13 | 2018-05-01 | 银川隆基硅材料有限公司 | A kind of seed crystal clamping device of vertical pulling method production silicon single crystal rod |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104960100B (en) | A kind of processing method improving silicon single crystal rod utilization rate | |
| KR101997565B1 (en) | Method for producing monocrystalline silicon | |
| US8524000B2 (en) | Pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt | |
| JP2008156225A (en) | Method and device for manufacturing semiconductor wafer of silicon | |
| US10100430B2 (en) | Method for growing silicon single crystal | |
| JP4821179B2 (en) | Method for growing silicon single crystal | |
| JP4806974B2 (en) | Silicon single crystal growth method | |
| CN104955991B (en) | For improving the weir of the crystal growth in continuous Czochralski methods | |
| CN106498494A (en) | A kind of thermal field of MEMS making silicon single crystal material and preparation method | |
| CN109554754A (en) | A kind of preparation method of single crystal growing furnace and monocrystalline silicon | |
| US20120279438A1 (en) | Methods for producing single crystal silicon ingots with reduced incidence of dislocations | |
| US6755910B2 (en) | Method for pulling single crystal | |
| US20190382915A1 (en) | Apparatus for growing single crystalline ingot and method for growing same | |
| JP2002145698A (en) | Single crystal silicon wafer, ingot and manufacturing method thereof | |
| US7594966B2 (en) | Method for producing a single crystal | |
| WO2016014805A1 (en) | Method of designing a passage through a weir for allowing dilutions of impurities | |
| JP4407188B2 (en) | Silicon wafer manufacturing method and silicon wafer | |
| CN110965118B (en) | Guide cylinder device and crystal pulling furnace | |
| US7083677B2 (en) | Silicon seed crystal and method for manufacturing silicon single crystal | |
| CN110129884A (en) | Crystal pulling furnace, the preparation method of monocrystal silicon, monocrystal silicon and silicon wafer | |
| CN103556216A (en) | Czochralski single-crystal production process capable of reducing swirl defect at head of single crystal and detection method | |
| JP6996477B2 (en) | Single crystal manufacturing method | |
| JP6627793B2 (en) | Crystal growth method | |
| CN116516477B (en) | Single crystal furnace guide cylinder and single crystal furnace | |
| JPH09249489A (en) | Seed crystal holder and method for pulling up single crystal using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190402 |