CN207268657U - A kind of on piece temperature sensing circuit with slope-compensation - Google Patents
A kind of on piece temperature sensing circuit with slope-compensation Download PDFInfo
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- CN207268657U CN207268657U CN201721189492.9U CN201721189492U CN207268657U CN 207268657 U CN207268657 U CN 207268657U CN 201721189492 U CN201721189492 U CN 201721189492U CN 207268657 U CN207268657 U CN 207268657U
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Abstract
The utility model discloses a kind of on piece temperature sensing circuit with slope-compensation, including temperature detection voltage generator, reference voltage generator, digital circuit and comparator；Temperature detection voltage generator includes first band gap base modules, and first band gap base modules are used to produce temperature detection voltage according to temperature change；Reference voltage generator includes the second band-gap reference module and control module；Second band-gap reference module is used to produce reference voltage；Control module is used for the reference voltage for exporting default size；Comparator is used to be contrasted temperature detection voltage and different size of reference voltage；Digital circuit is used for the size for controlling reference voltage.On piece temperature sensing circuit provided by the utility model with slope-compensation provides reference voltage by the second band-gap reference module, compared with temperature detection voltage, so as to carry out slope-compensation to reference voltage, the problem of temperature range is influenced by PTAT voltage slope variation is reduced, ensure that temperature detecting precision.
Description
Technical field
It the utility model is related to temperature detection field, more particularly to a kind of on piece temperature detection electricity with slope-compensation
Road.
Background technology
Integrated circuit is very sensitive to temperature change, and the performance of chip is different under different temperatures, and excessive temperature can cause
Chip permanent damages.In order to understand environment where chip and its internal temperature conditions, it is necessary to temperature sensing circuit, to carry out phase
The processing answered.But more multi-functional increase can cause the increase of chip area and power consumption.Therefore, one i.e. it is simple and practicable again
The temperature sensing circuit for not losing accuracy is the emphasis of research.Simplest circuit is to be compared temperature voltage and reference voltage
Compared with more than breaking circuit after threshold value.But with integrated circuit complexity increase, it is necessary to temperature sensing circuit by temperature signal
Digital signal is converted into control other modules.Temperature sensing circuit using wave chopping technology and sigma-delta ADC has
Highest precision, but its area is larger, is not suitable as the use of on piece auxiliary functional circuit；And use is directly proportional to temperature
(PTAT) oscillator, at different temperatures, produces the clock signal of different frequency, easily other circuits is had an impact, and
Increase system is spuious；The temperature sensing circuit for producing PTAT voltage using sub-threshold region metal-oxide-semiconductor has minimum area and power consumption,
But its linearity is generally poor；Using the structure of PTAT voltage, reference voltage, comparator and digital circuit, have moderate
Area and precision, but its reference voltage, when being changed by digital analog converter (DAC), temperature-compensating performance can be deteriorated.
The existing structure using PTAT voltage, reference voltage, comparator and digital circuit is as shown in Figure 1, on the left of wherein
Circuit is band gap reference, Q1、Q2For two diode types of attachment matched BJT, Q1Area is Q2N times.Using in electric current phase
With in the case of, the different PN junction voltage difference of the junction area principle directly proportional to temperature, in resistance R1On form one with temperature
The electric current of directly proportional (PTAT) is spent, and amplifies M times by current mirror M1, M3 and arrives resistance R2On, obtain PTAT voltage.
Transistor base-emitter voltage difference is：Wherein, k is Boltzmann constant, and T is absolute
Temperature.
M1With M2Ratio is identical, and OP input terminal voltages are equal, therefore：I1R1+VBE1=VBE2,
Therefore：
PTAT current is passed through into current mirror M1、M4Resistance R is arrived in N times of amplification3With transistor Q3On, due to the voltage of transistor
V dropsBEFor negative temperature coefficient, by being appropriately arranged with parameter, a reference voltage not varied with temperature can be obtained：Wherein M4It is in parallel for multiple PMOS tube, and by Digital Signals switch conduction with closing
Close.As can be seen that the slope of reference voltage is by M4Pipe parallel connection number influences.When N is bigger, slope is bigger；N is got over hour, and slope is got over
It is small；The reference voltage of anticipated output is as shown in Figure 2.Therefore, in negative temperature coefficient voltage VBE3When remaining unchanged, it is impossible to ensure ginseng
The temperature compensation characteristic of voltage is examined, i.e., it cannot be guaranteed that temperature detecting precision.
Utility model content
For overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of on piece with slope-compensation
Temperature sensing circuit, to solve the problems, such as that existing temperature sensing circuit temperature detecting precision is not high.
The purpose of this utility model adopts the following technical scheme that realization：
A kind of on piece temperature sensing circuit with slope-compensation, including temperature detection voltage generator, reference voltage hair
Raw device, digital circuit and comparator；
The temperature detection voltage generator includes first band gap base modules, the first band gap base modules with it is described
The first input end connection of comparator, the first band gap base modules are used to produce temperature detection voltage according to temperature change；
The reference voltage generator includes the second band-gap reference module and control module；The input terminal of the control module
It is connected with the second band-gap reference module, the output terminal of the control module is connected with the second input terminal of the comparator；
The second band-gap reference module is used to produce reference voltage；The control module is used for the reference voltage for exporting default size；
The output terminal of the comparator is connected with the digital circuit, and the comparator is used for the temperature detection voltage
Contrasted with different size of reference voltage, and comparing result is output to the digital circuit；The digital circuit is used for
The amplification factor of the control module is controlled to control the size of reference voltage.
Further, the second band-gap reference module includes the first PMOS transistor, the second PMOS transistor, the one or three
Pole pipe, the second triode, the first amplifier, first resistor, second resistance and 3rd resistor；
The grid of first PMOS transistor and the grid of second PMOS transistor are connected to described first and put altogether
The output terminal of big device；The source electrode of first PMOS transistor and the source electrode of second PMOS transistor are connected to power supply altogether
VDD；
The transmitting of first triode is connected to after first resistor described in the drain series of first PMOS transistor
Pole, the drain electrode of first PMOS transistor are also connected the second resistance ground connection；The grounded collector of first triode,
The base stage of first triode is connected and is grounded with the base stage of the second triode；The drain electrode connection of first PMOS transistor
To the first input end of first amplifier, the second input terminal of first amplifier is connected to the 2nd PMOS crystal
The drain electrode of pipe；The drain electrode of second PMOS transistor is connected to the emitter of second triode, second triode
Grounded collector.
Further, the control module includes metal-oxide-semiconductor unit, and the grid of the metal-oxide-semiconductor unit is connected to described first
The output terminal of amplifier；The source electrode of the metal-oxide-semiconductor unit is connected to power vd D；The drain electrode of the metal-oxide-semiconductor unit is connected to described
Second input terminal of comparator, the drain electrode of the metal-oxide-semiconductor unit are also connected the 3rd resistor ground connection.
Further, the metal-oxide-semiconductor unit includes N number of PMOS transistor in parallel, and the digital circuit is by controlling
The conducting quantity of the PMOS of parallel connection is stated to control the size of the reference voltage, wherein, N is the natural number more than 1.
Further, the first band gap base modules include the 3rd PMOS transistor, the 4th PMOS transistor, the 5th
PMOS transistor, the 3rd triode, the 4th triode, the second amplifier, the 4th resistance and the 5th resistance；
The grid of 3rd PMOS transistor, the grid of the 4th PMOS transistor and the 5th PMOS transistor
Grid be connected to the output terminal of second amplifier altogether；Source electrode, the 4th PMOS of 3rd PMOS transistor are brilliant
The source electrode of body pipe and the source electrode of the 5th PMOS transistor are connected to power vd D altogether；
The transmitting of the 3rd triode is connected to after 4th resistance described in the drain series of 3rd PMOS transistor
Pole, the grounded collector of the 3rd triode, the base stage of the 3rd triode are connected and connect with the base stage of the 4th triode
Ground；The drain electrode of 3rd PMOS transistor is connected to the first input end of second amplifier, second amplifier
Second input terminal is connected to the drain electrode of the 4th PMOS transistor；The drain electrode of 4th PMOS transistor is connected to described
The emitter of four triodes, the grounded collector of the 4th triode；The drain electrode of 5th PMOS transistor is connected to institute
State the first input end of comparator, the drain electrode of the 5th PMOS transistor is also connected the 5th resistance eutral grounding.
Further, the junction area of the PN junction of the junction area of the PN junction of the 3rd triode and the 4th triode is not
Together.
Further, chip mode adjustment module is further included, the digital circuit is according to the comparing result of the comparator
Output temperature code is to the chip mode adjustment module to control chip to be measured to enter different operating modes at different temperatures.
Compared with prior art, the beneficial effects of the utility model are：Reference voltage is provided by the second band-gap reference module,
Compared with temperature detection voltage, so as to carry out slope-compensation to reference voltage, temperature range is reduced by PTAT voltage slope
The problem of change influences, ensure that temperature detecting precision.
Brief description of the drawings
Fig. 1 is the circuit diagram of existing temperature sensing circuit；
Fig. 2 is the anticipated output V diagram of temperature sensing circuit shown in Fig. 1；
Fig. 3 is the analog circuit figure for the temperature sensing circuit with slope-compensation that the utility model embodiment provides；
Fig. 4 is the circuit diagram for the temperature sensing circuit with slope-compensation that the utility model embodiment provides；
Fig. 5 is the anticipated output V diagram of circuit shown in Fig. 4.
Embodiment
In the following, with reference to attached drawing and embodiment, the utility model is described further, it is necessary to explanation is,
On the premise of not colliding, it can be formed in any combination between various embodiments described below or between each technical characteristic new
Embodiment.
As shown in figure 3, the on piece temperature sensing circuit with slope-compensation that the utility model embodiment provides, including temperature
Degree detection voltage generator 1, reference voltage generator 2, digital circuit 3 and comparator 4；Temperature detection voltage generator 1 includes
First band gap base modules 11, first band gap base modules 11 are connected with the first input end of comparator 4, first band gap benchmark mould
Block 11 is used to produce temperature detection voltage according to temperature change；Reference voltage generator 2 includes 21 He of the second band-gap reference module
Control module 22；The input terminal of control module 22 is connected with the second band-gap reference module 21, the output terminal of control module 22 with than
The second input terminal compared with device 4 connects；Second band-gap reference module 21 is used to produce reference voltage；Control module is pre- in output with 22
If the reference voltage of size；The output terminal of comparator 4 is connected with digital circuit 3, and comparator 4 is for by temperature detection voltage and not
Reference voltage with size is contrasted, and is exported comparing result and patrolled to digital circuit 3, digital circuit 3 according to comparing result
Collect other circuits that signal controls chip to be detected, such as size of current, parallel resistance quantity；Digital circuit 3 be used for according to than
Comparing result output N bit control codes compared with device 4 control reference voltage to control module 22 to control its amplification factor
Size.Reference voltage and temperature detection voltage are produced by band-gap reference module, so that slope-compensation has been carried out to reference voltage,
The problem of temperature range is influenced by PTAT voltage slope variation is reduced, ensure that temperature detecting precision.
As shown in figure 4, the second band-gap reference module 21 includes the first PMOS transistor M1, the second PMOS transistor M2, the
One triode Q1, the second triode Q2, the first amplifier OP1, first resistor R1, second resistance R2 and 3rd resistor R3；First
The grid of the grid of PMOS transistor M1 and the second PMOS transistor M2 are connected to the output terminal of the first amplifier OP1 altogether；First
The source electrode of the source electrode of PMOS transistor M1 and the second PMOS transistor M2 are connected to power vd D altogether；First PMOS transistor M1's
It is connected to the emitter of the first triode Q1 after drain series first resistor R1, the drain electrode of the first PMOS transistor M1 also connects
Two resistance R2 are grounded；The base stage of the grounded collector of first triode Q1, the base stage of the first triode Q1 and the second triode Q2
Connect and be grounded；The drain electrode of first PMOS transistor M1 is connected to the first input end of the first amplifier OP1, the first amplifier
The second input terminal of OP1 is connected to the drain electrode of the second PMOS transistor M2；The drain electrode of second PMOS transistor M2 is connected to second
The emitter of triode Q2, the grounded collector of the second triode Q2.
First band gap base modules 11 include the 3rd PMOS transistor M3, the 4th PMOS transistor M4, the 5th PMOS crystal
Pipe M5, the 3rd triode Q3, the 4th triode Q4, the second amplifier OP2, the 4th resistance R4 and the 5th resistance R5；3rd PMOS
The grid of the grid of transistor M3, the grid of the 4th PMOS transistor M4 and the 5th PMOS transistor M5 is connected to the second amplification altogether
The output terminal of device OP2；The source electrode of 3rd PMOS transistor M3, the source electrode and the 5th PMOS transistor M5 of the 4th PMOS transistor M4
Source electrode be connected to power vd D altogether；The 3rd triode is connected to after the 4th resistance R4 of drain series of 3rd PMOS transistor M3
The emitter of Q3, the grounded collector of the 3rd triode Q3, the base stage of the 3rd triode Q3 and the base stage of the 4th triode Q4 connect
Connect and be grounded；The drain electrode of 3rd PMOS transistor M3 is connected to the first input end of the second amplifier OP2, the second amplifier OP2
The second input terminal be connected to the drain electrode of the 4th PMOS transistor M4；The drain electrode of 4th PMOS transistor M4 is connected to the four or three pole
The emitter of pipe Q4, the grounded collector of the 4th triode Q4；The drain electrode of 5th PMOS transistor M5 is connected to the of comparator 4
One input terminal, the drain electrode of the 5th PMOS transistor M5 are also connected the 5th resistance R5 ground connection.
As shown in figure 4, the wherein junction area of the PN junction of the junction area of the PN junction of the 3rd triode Q3 and the 4th triode Q4
Difference, the junction area of Q3 are n times of the junction area of Q4.Transistor base-emitter voltage difference is：
Wherein, k is Boltzmann constant, and T is absolute temperature.
Using in the case where electric current is identical, the different PN junction voltage difference of the junction area principle directly proportional to temperature, resistance
Electric current I4, M3 and the M4 ratio of formation one (PTAT) directly proportional to temperature is identical on R4, and OP2 input terminal voltages are equal, therefore：
I4R4+VBE3=VBE4 (2)
I4 amplifies M times to resistance R5 by the 3rd PMOS transistor M3, the 5th PMOS transistor M5, obtains PTAT electricity
Pressure.
Therefore：
Similarly, since M5 and M6 ratios are identical, OP2 input terminal voltages are equal, can obtain the electric current of the first PMOS transistor M1
I1 is：
Control module 22 includes metal-oxide-semiconductor unit M6, and the grid of metal-oxide-semiconductor unit M6 is connected to the output of the first amplifier OP1
End；The source electrode of metal-oxide-semiconductor unit M6 is connected to power vd D；The drain electrode of metal-oxide-semiconductor unit M6 is connected to the second input terminal of comparator 4,
The drain electrode of metal-oxide-semiconductor unit M6 also connect 3rd resistor R3 ground connection.Metal-oxide-semiconductor unit M6 includes N number of PMOS transistor in parallel, its
In, N is the natural number more than 1.I1 amplifies N times to resistance R3, and the junction area of Q1 is n times of the junction area of Q2, and convolution 1 can
：
Digital circuit 3 controls the size of the reference voltage by controlling the conducting quantity of PMOS in parallel.It can see
Go out, the slope of reference voltage is no longer influenced by current amplification factor N.Therefore, as long as by the PTAT voltage and negative temperature in bracket
Coefficient voltages match, it is possible to obtain the preferable reference voltage of series of temperature coefficient, it is contemplated that output voltage is as shown in Figure 5.
As preferred embodiment, temperature sensing circuit further includes chip mode adjustment module 5,3 basis of digital circuit
The logical signal output temperature code that comparator 4 inputs is to chip mode adjustment module 5 to control chip to be measured at different temperatures
Into different operating modes, such as adjust the size of the electric current of chip periphery circuit to be detected, the capacitance of parallel connection, the number of resistance
Amount, make chip has different operating modes at different temperature, reduces influence of the temperature to chip.
On piece temperature sensing circuit provided by the utility model with slope-compensation is provided by the second band-gap reference module
Reference voltage, compared with temperature detection voltage, so as to carry out slope-compensation to reference voltage, reduces temperature range by PTAT
The problem of voltage slope change influences, ensure that temperature detecting precision.
The above embodiment is only the preferred embodiment of the utility model, it is impossible to is protected with this to limit the utility model
Scope, the change of any unsubstantiality that those skilled in the art is done on the basis of the utility model and replacing belongs to
In the utility model scope claimed.
Claims (7)
1. a kind of on piece temperature sensing circuit with slope-compensation, it is characterised in that including temperature detection voltage generator, ginseng
Examine voltage generator, digital circuit and comparator；
The temperature detection voltage generator includes first band gap base modules, the first band gap base modules and the comparison
The first input end connection of device, the first band gap base modules are used to produce temperature detection voltage according to temperature change；
The reference voltage generator includes the second band-gap reference module and control module；The input terminal of the control module and institute
The connection of the second band-gap reference module is stated, the output terminal of the control module is connected with the second input terminal of the comparator；It is described
Second band-gap reference module is used to produce reference voltage；The control module is used for the reference voltage for exporting default size；
The output terminal of the comparator is connected with the digital circuit, and the comparator is for by the temperature detection voltage and not
Reference voltage with size is contrasted, and comparing result is output to the digital circuit；The digital circuit is used for basis
Comparing result controls the amplification factor of the control module to control the size of reference voltage.
2. the on piece temperature sensing circuit according to claim 1 with slope-compensation, its feature exist, second band gap
Base modules include the first PMOS transistor, the second PMOS transistor, the first triode, the second triode, the first amplifier, the
One resistance, second resistance and 3rd resistor；
The grid of first PMOS transistor and the grid of second PMOS transistor are connected to first amplifier altogether
Output terminal；The source electrode of first PMOS transistor and the source electrode of second PMOS transistor are connected to power vd D altogether；
The emitter of first triode, institute are connected to after first resistor described in the drain series of first PMOS transistor
The drain electrode for stating the first PMOS transistor is also connected second resistance ground connection；The grounded collector of first triode, it is described
The base stage of first triode is connected and is grounded with the base stage of the second triode；The drain electrode of first PMOS transistor is connected to institute
The first input end of the first amplifier is stated, the second input terminal of first amplifier is connected to second PMOS transistor
Drain electrode；The drain electrode of second PMOS transistor is connected to the emitter of second triode, the collection of second triode
Electrode is grounded.
3. the on piece temperature sensing circuit according to claim 2 with slope-compensation, it is characterised in that the control mould
Block includes metal-oxide-semiconductor unit, and the grid of the metal-oxide-semiconductor unit is connected to the output terminal of first amplifier；The metal-oxide-semiconductor unit
Source electrode be connected to power vd D；The drain electrode of the metal-oxide-semiconductor unit is connected to the second input terminal of the comparator, the metal-oxide-semiconductor
The drain electrode of unit is also connected 3rd resistor ground connection.
4. the on piece temperature sensing circuit according to claim 3 with slope-compensation, it is characterised in that the metal-oxide-semiconductor
Unit includes N number of PMOS transistor in parallel, and the digital circuit is controlled by controlling the conducting quantity of the PMOS in parallel
The size of the reference voltage is made, wherein, N is the natural number more than 1.
5. the on piece temperature sensing circuit according to claim 1 with slope-compensation, it is characterised in that the first band
Gap base modules include the 3rd PMOS transistor, the 4th PMOS transistor, the 5th PMOS transistor, the 3rd triode, the four or three
Pole pipe, the second amplifier, the 4th resistance and the 5th resistance；
Grid, the grid of the 4th PMOS transistor and the grid of the 5th PMOS transistor of 3rd PMOS transistor
The output terminal of second amplifier is extremely connected to altogether；The source electrode of 3rd PMOS transistor, the 4th PMOS transistor
Source electrode and the source electrode of the 5th PMOS transistor be connected to power vd D altogether；
The emitter of the 3rd triode, institute are connected to after 4th resistance described in the drain series of 3rd PMOS transistor
The grounded collector of the 3rd triode is stated, the base stage of the 3rd triode is connected and is grounded with the base stage of the 4th triode；Institute
The drain electrode for stating the 3rd PMOS transistor is connected to the first input end of second amplifier, and the second of second amplifier is defeated
Enter the drain electrode that end is connected to the 4th PMOS transistor；The drain electrode of 4th PMOS transistor is connected to the four or three pole
The emitter of pipe, the grounded collector of the 4th triode；The drain electrode of 5th PMOS transistor is connected to the comparison
The first input end of device, the drain electrode of the 5th PMOS transistor are also connected the 5th resistance eutral grounding.
6. the on piece temperature sensing circuit according to claim 5 with slope-compensation, it is characterised in that the described 3rd 3
The junction area of the PN junction of pole pipe is different with the junction area of the PN junction of the 4th triode.
7. the on piece temperature sensing circuit according to claim 1 with slope-compensation, it is characterised in that further include chip
Mode tuning module, the digital circuit are adjusted according to the comparing result output temperature code of the comparator to the chip mode
Module is to control chip to be measured to enter different operating modes at different temperatures.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721189492.9U CN207268657U (en) | 2017-09-14 | 2017-09-14 | A kind of on piece temperature sensing circuit with slope-compensation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721189492.9U CN207268657U (en) | 2017-09-14 | 2017-09-14 | A kind of on piece temperature sensing circuit with slope-compensation |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799862A (en) * | 2019-01-23 | 2019-05-24 | 江苏信息职业技术学院 | A kind of bandgap voltage reference |
| CN110967128A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Thermal sensor and method of temperature measurement |
| CN111064453A (en) * | 2019-12-13 | 2020-04-24 | 南京中感微电子有限公司 | Voltage comparator |
| CN111213041A (en) * | 2019-05-20 | 2020-05-29 | 香港应用科技研究院有限公司 | Single-temperature-point temperature sensor sensitivity calibration |
| US10677664B1 (en) | 2019-05-20 | 2020-06-09 | Hong Kong Applied Science and Technology Research Institute Company Limited | Single-temperature-point temperature sensor sensitivity calibration |
| CN113108926A (en) * | 2021-03-26 | 2021-07-13 | 江苏银河芯微电子有限公司 | Temperature measuring device and method and remote temperature measuring system |
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2017
- 2017-09-14 CN CN201721189492.9U patent/CN207268657U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110967128A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Thermal sensor and method of temperature measurement |
| US11493389B2 (en) | 2018-09-28 | 2022-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low temperature error thermal sensor |
| CN109799862A (en) * | 2019-01-23 | 2019-05-24 | 江苏信息职业技术学院 | A kind of bandgap voltage reference |
| CN111213041A (en) * | 2019-05-20 | 2020-05-29 | 香港应用科技研究院有限公司 | Single-temperature-point temperature sensor sensitivity calibration |
| US10677664B1 (en) | 2019-05-20 | 2020-06-09 | Hong Kong Applied Science and Technology Research Institute Company Limited | Single-temperature-point temperature sensor sensitivity calibration |
| WO2020232708A1 (en) * | 2019-05-20 | 2020-11-26 | Hong Kong Applied Science and Technology Research Institute Company Limited | Single-temperature-point temperature sensor sensitivity calibration |
| CN111064453A (en) * | 2019-12-13 | 2020-04-24 | 南京中感微电子有限公司 | Voltage comparator |
| CN111064453B (en) * | 2019-12-13 | 2023-07-04 | 南京中感微电子有限公司 | Voltage comparator |
| CN113108926A (en) * | 2021-03-26 | 2021-07-13 | 江苏银河芯微电子有限公司 | Temperature measuring device and method and remote temperature measuring system |
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